CN1206386C - Ion implanted composite coating film apparatus - Google Patents
Ion implanted composite coating film apparatus Download PDFInfo
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- CN1206386C CN1206386C CN 03129551 CN03129551A CN1206386C CN 1206386 C CN1206386 C CN 1206386C CN 03129551 CN03129551 CN 03129551 CN 03129551 A CN03129551 A CN 03129551A CN 1206386 C CN1206386 C CN 1206386C
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Abstract
The present invention relates to ion implanted composite film coating equipment which belongs to the technical field of coating a film. The gas ion source, the metal ion source, the DC magnetron sputtering target source, the IF pulse magnetron sputtering target source, two sets of DC magnetic filtration electric arc ion plating sources of the present invention share one vacuum chamber and are fixed to a casing of a composite film coating machine. The gas ion source is vertically positioned in the middle of the upper part of the vacuum chamber. The metal ion source is positioned on one side of the gas ion source and is inserted in the upper part of the vacuum chamber in an inclining mode. The DC magnetron sputtering target source, the IF pulse magnetron sputtering target source and the two DC magnetic filtration electric arc ion plating sources are distributed on two diagonals and are positioned on upper parts of both sides of the vacuum chamber. Center lines of the six sources are gathered on a multi-function specimen stage workpiece. A vacuum-pumping system is connected with the vacuum chamber. The present invention has the modification technology of multiple material surfaces, has the advantages of one machine with multiple functions, novel equipment design and reasonable and compact structure, reduces equipment manufacture costs and has a multifunction effect.
Description
Technical field
What the present invention relates to is the multi-functional composite coating equipment that a kind of material surface modifying is used, and particularly a kind of ion implantation composite coating equipment belongs to the coating technique field.
Background technology
Along with the requirement to the material surface modifying layer is more and more high, the single-material surface reforming layer often is difficult to satisfy the service requirements of some occasion, and therefore, the duplex surface modification technology that collects the length of two or more material surface modifying method is arisen at the historic moment.Desire realizes the material duplex surface modification, and corresponding composite coating equipment is crucial.Combine with PVD or CVD method ion implantation as desire, a kind of method is earlier workpiece to be placed on ion implantation device to handle, and takes out then to put into PVD or CVD equipment is handled, and puts into ion implantation device after the processing again again and handles.So repeatedly, reach needed thickness and surface modification requirement at last.This method needs two complete equipments, and technology is loaded down with trivial details, and production efficiency is low.Another kind of technology is can realize ion implantation individually or simultaneously in an equipment and two kinds of processing of PVD (or CVD), finish that marginal not is gone into limit deposition and ion beam enhanced depositing is that (IBED) works, this had both reduced the device fabrication cost, compound filming technology is oversimplified, production efficiency is improved, and can improve the quality of material surface modifying layer again.But this just need integrate the special membrane equipment of different materials process for modifying surface, is not destroying realization kinds of surface modification processing or duplex surface modification processing under the vacuum condition.
Find by literature search, Chinese patent is 94218387.8, the utility model name is called: multi-functional comprehensive enhancing appositional pattern ion implanter, this ion implanter comprise that ion implantation power-supply system, plasma produce system, plasma body working spaces, vacuum-pumping system, control survey system, working gas feeder system and cooling system.This machine working spaces is equipped with inboard evaporation target, so also have both the assistant depositing function.But its major function is comprehensive ion implantation function, and its deposition function has certain limitation (slow as sedimentation rate), in further retrieving, finds as yet and the identical or similar report of theme of the present invention.
Summary of the invention
The objective of the invention is to overcome the shortcoming of present most filming equipment function singlenesses, a kind of multi-functional ion implantation composite coating equipment is provided, make it integrate the different materials process for modifying surface, the equipment design novelty, compactness rational in infrastructure can realize that in this equipment gaseous ion injects, metal ion injects, double base mixes injection, magnetically controlled DC sputtering deposition, medium frequency magnetron sputtering deposition, DC magnetic filtering multi-arc ion coating, ion beam enhanced depositing and marginal not and goes into surfaces of various materials modification processing such as limit deposition.
The present invention is achieved by the following technical solutions, the present invention includes: gas ion source, metal ion source, two DC magnetic filtering arc ion plating sources, magnetically controlled DC sputtering target source, middle frequency pulsed magnetron sputtering target source, vacuum chamber is used sample table and vacuum-pumping system more.Its mode of connection is: six shared vacuum chambers in source such as DC magnetic filtering arc ion plating sources are overlapped in gas ion source, metal ion source, magnetically controlled DC sputtering target source, middle frequency pulsed magnetron sputtering target source and two, and are fixed on the stainless steel casing corresponding site of composite film coating machine.Gas ion source vertically is positioned at the center on vacuum chamber top, and metal ion source is positioned at a side of gas ion source, and oblique cutting is in vacuum chamber top, its medullary ray with how to be 62 ° with the sample face.Magnetically controlled DC sputtering target source and medium frequency magnetron sputtering target source, two DC magnetic filtering arc ion plating sources then are distributed on two diagonal lines, and be positioned at position on the upper side, vacuum chamber both sides, the medullary ray in six sources converges in many with on the sample table workpiece, and vacuum-pumping system is connected with vacuum chamber.Coordinate to adopt computer control between the operation in each source and each source.Controlling System adopts upper and lower computer collecting and distributing type control mode, and upper computer is a high performance brand name computer, and upper computer is made up of PLC, can be by 485 mouthfuls of communications that link to each other between upper and lower computer.
Gas ion source adopts Kaufman source (Coffeman), can produce gaseous ion (except that corrodibility and strong oxidizing gas).By the gas ion source that is delivered to the vacuum chamber center of top behind the high-voltage power supply generation high pressure by high-tension cable, and adopt four grid porous flat plate extraction systems, four grid porous flat plate extraction systems are positioned at gas ion source inside, ionic fluid is that collimated beam is drawn, 0～70kV is adjustable for high energy gas ion source operating voltage, and variable range is wide, the utilising efficiency height, and ionic fluid is line 〉=8mA in the 150mm at extraction system 400mm place homogeneity range, and ununiformity is less than 20%.But gas ion source is double as low energy irrigation source usefulness also, but require this moment the sample table of place work piece to tilt.
Metal ion source adopts wheat watt ion source, by the metal ion source that is delivered to vacuum chamber top one side behind the high-voltage power supply generation high pressure by high-tension cable, and adopt three grid porous flat plate extraction systems, and it is positioned at metal ion source inside, and the acceleration voltage variable range is that 0～55kV is adjustable continuously.Ionic fluid is that collimated beam is drawn, the utilising efficiency height, and ionic fluid is at the homogeneity range 150mm internal beam current 〉=8mA of distance component extraction system 400mm place, and ununiformity is less than 20%.
Advanced IGBT contravariant switch power supply is adopted in DC magnetic filtering arc ion plating source, and with cathode arc arc discharge direct heating evaporation source, evaporation source is installed on two DC magnetic filtering arc ion plating sources.In order to improve the performance of evaporantion source, direct magnetic field (being the magnetic strainer tube) is set in the orientation movement approach of arc plasma, it can make arc plasma accelerated motion on the one hand, improves the density and the directional property of line; But small of elimination and molten drop improve ion plating rete quality on the other hand, so magnetic filtered arc source is syphon shape, the import of arc source and the plasma body outlet angle of cut are 90 °.
Magnetically controlled DC sputtering power supply and middle frequency pulsed magnetron sputtering power supply adopt advanced IGBT contravariant switch power supply, and an end is guided to many with on the sample table, and the other end then is connected on magnetically controlled DC sputtering target source and the middle frequency pulsed magnetron sputtering target source.Sputtering target is assembled by the class coating material of thick about 3～10mm.
Vacuum chamber adopts the 8mm stainless steel plate to be welded, and the two ends of vacuum chamber all can be opened, and are convenient to picking and placeing and keeping in repair of workpiece.
Sample table by turbine, scroll bar and gear transmission, can realize that translation, rotation, revolution, folk prescription are to the inclination angle by a servo vacuum motor.Several 3 of rotation revolution target station.
Vacuum-pumping system comprises: turbomolecular pump, pump-line, mechanical pump, ring flange, and ring flange links to each other with vacuum chamber, and turbomolecular pump is connected by pump-line with mechanical pump.Compare with oil diffusion pump, the turbo-molecular pump startup is fast, has improved equipment vacuum tightness, has also reduced pollution, and extremely vacuum tightness can reach 8 * 10
-4Pa.
During work, will be fixed on the sample table through pretreated workpiece (as polishing, degrease is handled and cleaning-drying).Close vacuum chamber, start vacuum-pumping system, vacuum tightness is reached behind the required value in the working gas feed-in vacuum chamber, start gas ion source earlier and clean.Regulate required processing parameter as requested, operate.These functions of the equipments are powerful, can injecting gas and metal ion (have single element and inject, dual element injects, and mixes polynary injection), and have ionic fluid and clean magnetron sputtering deposition, multiple functions such as multi-arc ion coating and ion beam enhanced depositing.There are oneself independently power supply, measurement, Controlling System in each source.In certain depth, the surface reforming layer of continuous transition between formation and the matrix.This modified layer bonding strength height is difficult for peeling off from matrix, is much better than PVD, CVD coating.It can obviously improve wear resisting property, the corrosion resistance nature of material, thereby improves its work-ing life, can be widely used in industries such as machinery, chemical industry, semi-conductor, aviation and medical device.
The present invention has substantive distinguishing features and marked improvement, the present invention integrates the different materials process for modifying surface, make it can be in an equipment, do not destroying multiple processing of realization or Combined Processing under the vacuum condition, be that each source can be used separately, also can be by different way according to processing requirement, part or carry out work simultaneously.Like this, a tractor serves several purposes had both reduced the device fabrication cost, had multi-functional effect again, equipment design novelty, compactness rational in infrastructure.Can realize that in this equipment gaseous ion injects, metal ion injects, double base mixes injection, magnetically controlled DC sputtering deposition, medium frequency magnetron sputtering deposition, DC magnetic filtering multi-arc ion coating, ion beam enhanced depositing and marginal not and goes into surfaces of various materials modification processing such as limit deposition.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is a structure left view of the present invention;
Fig. 3 is a structure vertical view of the present invention.
Embodiment
As Fig. 1, Fig. 2 and shown in Figure 3, the present invention includes: gas ion source 1, metal ion source 2, two DC magnetic filtering arc ion plating sources 3 and 4, magnetically controlled DC sputtering target source 5, middle frequency pulsed magnetron sputtering target source 6, vacuum chamber 7 is used sample table 8 and vacuum-pumping system 9 more.Its mode of connection is: gas ion source 1, metal ion source 2, magnetically controlled DC sputtering target source 5, middle frequency pulsed magnetron sputtering target source 6 and two cover DC magnetic filtering arc ion plating sources 3,4 six shared vacuum chambers 7 in source, and be fixed on the shell of composite film coating machine, gas ion source 1 vertically is positioned at the center on vacuum chamber 7 tops, metal ion source 2 is positioned at a side of gas ion source 1, oblique cutting is in vacuum chamber 7 tops, its medullary ray with how be 62 ° with sample table 8 faces, magnetically controlled DC sputtering target source 5 and medium frequency magnetron sputtering target source 6, two DC magnetic filtering arc ion plating sources 3 and 4 are distributed on two diagonal lines, and be positioned at position on the upper side, vacuum chamber 7 both sides, the medullary ray in six sources converges in many with on sample table 8 workpiece, and vacuum-pumping system 9 is connected with vacuum chamber 7.
By the coordination between each source of computer control and each source, and adopt the control of upper and lower computer collecting and distributing type, upper computer is a high performance brand name computer, and lower computer is made up of PLC, passes through 485 mouthfuls of communications that link to each other between upper and lower computer.
IGBT contravariant switch power supply is adopted in DC magnetic filtering arc ion plating source 3 and 4, with cathode arc arc discharge direct heating evaporation source, evaporation source is arranged on the DC magnetic filtering arc ion plating source 3,4, DC magnetic filtering arc ion plating source 3,4 is syphon shape, and the import of arc source and the plasma body outlet angle of cut are 90 °.
Magnetically controlled DC sputtering power supply 5 and middle frequency pulsed magnetron sputtering 6 power supplys adopt IGBT contravariant switch power supply, and an end is guided to many with on the sample table 8, and the other end then is connected on magnetically controlled DC sputtering target source 5 and the middle frequency pulsed magnetron sputtering target source 6.Sputtering target is assembled by the class coating material of thick about 3～10mm.
Vacuum-pumping system 9 comprises: pump-line 10, mechanical pump 11, ring flange 12, turbomolecular pump 13, and ring flange 12 links to each other with vacuum chamber 7, and turbomolecular pump 13 is connected by pump-line 10 with mechanical pump 11.
Claims (7)
1, a kind of ion implantation composite coating equipment, comprise: gas ion source (1), vacuum chamber (7), many with sample table (8) and vacuum-pumping system (9), it is characterized in that, also comprise: metal ion source (2), two DC magnetic filtering arc ion plating sources (3) and (4), magnetically controlled DC sputtering target source (5), middle frequency pulsed magnetron sputtering target source (6), its mode of connection is: gas ion source (1), metal ion source (2), magnetically controlled DC sputtering target source (5), middle frequency pulsed magnetron sputtering target source (6) and two cover DC magnetic filtering arc ion plating sources (3), (4) six shared vacuum chambers in source (7), and be fixed on the shell of composite film coating machine, gas ion source (1) vertically is positioned at the center on vacuum chamber (7) top, metal ion source (2) is positioned at a side of gas ion source (1), oblique cutting is in vacuum chamber (7) top, magnetically controlled DC sputtering target source (5) and medium frequency magnetron sputtering target source (6), two DC magnetic filtering arc ion plating sources (3) and (4) then are distributed on two diagonal lines, and be positioned at position on the upper side, vacuum chamber (7) both sides, the medullary ray in six sources converges in many with on sample table (8) workpiece, and vacuum-pumping system (9) is connected with vacuum chamber (7).
2, ion implantation composite coating equipment according to claim 1, it is characterized in that, gas ion source (1) adopts the Kaufman source, by being delivered to gas ion source (1) by high-tension cable behind the high-voltage power supply generation high pressure, and adopt four grid porous flat plate extraction systems, four grid porous flat plate extraction systems are positioned at gas ion source (1) inside, and operating voltage 0～70kV is adjustable for gas ion source (1).
3, ion implantation composite coating equipment according to claim 1, it is characterized in that, metal ion source (2) adopts wheat watt ion source, by the metal ion source (2) that is delivered to vacuum chamber top one side behind the high-voltage power supply generation high pressure by high-tension cable, and adopt three grid porous flat plate extraction systems, three grid porous flat plate extraction systems are positioned at metal ion source (2) inside, and the acceleration voltage scope is that 0～55kV is adjustable.
4, according to claim 1 or 3 described ion implantation composite coating equipments, it is characterized in that, metal ion source (2) medullary ray with how be 62 ° with sample table (8) face.
5, ion implantation composite coating equipment according to claim 1, it is characterized in that, IGBT contravariant switch power supply is adopted in DC magnetic filtering arc ion plating source (3) and (4), with cathode arc arc discharge direct heating evaporation source, evaporation source is arranged on DC magnetic filtering arc ion plating source (3), (4), DC magnetic filtering arc ion plating source (3), (4) are syphon shape, and the import of arc source and the plasma body outlet angle of cut are 90 °.
6, ion implantation composite coating equipment according to claim 1, it is characterized in that, magnetically controlled DC sputtering power supply (5) and middle frequency pulsed magnetron sputtering (6) power supply adopt IGBT contravariant switch power supply, one end is guided to many with on the sample table (8), the other end then is connected on magnetically controlled DC sputtering target source (5) and the middle frequency pulsed magnetron sputtering target source (6), and sputtering target is assembled by the class coating material of thick 3～10mm.
7, ion implantation composite coating equipment according to claim 1, it is characterized in that, vacuum-pumping system (9) comprising: pump-line (10), mechanical pump (11), ring flange (12), turbomolecular pump (13), ring flange (12) links to each other with vacuum chamber (7), and turbomolecular pump (13) is connected by pump-line (10) with mechanical pump (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03129551 CN1206386C (en) | 2003-06-26 | 2003-06-26 | Ion implanted composite coating film apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 03129551 CN1206386C (en) | 2003-06-26 | 2003-06-26 | Ion implanted composite coating film apparatus |
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| CN1472360A CN1472360A (en) | 2004-02-04 |
| CN1206386C true CN1206386C (en) | 2005-06-15 |
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| CN 03129551 Expired - Fee Related CN1206386C (en) | 2003-06-26 | 2003-06-26 | Ion implanted composite coating film apparatus |
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| CN101634011B (en) * | 2008-07-21 | 2011-04-27 | 中国科学院宁波材料技术与工程研究所 | Magnetic control sputtering device and method for uniformly coating film on outer surface of workpiece |
| CN101724820B (en) * | 2008-10-22 | 2011-04-20 | 中国科学院宁波材料技术与工程研究所 | Method for magnetron sputtering deposition of aluminum film for surface protection of NdFeB workpiece |
| WO2011116495A1 (en) * | 2010-03-24 | 2011-09-29 | 中国地质大学（北京） | Hybrid vacuum deposition device |
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| CN104055586B (en) * | 2014-06-24 | 2017-01-25 | 丹阳纳瑞康纳米科技有限公司 | Metal wire for embedding fine silver particles and preparation |
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| CN110983282B (en) * | 2019-12-09 | 2021-02-02 | 北京师范大学 | Device for replacing laser direct forming technology |
| CN111020479B (en) * | 2019-12-25 | 2021-03-23 | 北京师范大学 | High-shielding-piece corrosion-resistant multi-element coating, preparation method thereof and device used by preparation method |
| CN111826619A (en) * | 2020-07-24 | 2020-10-27 | 九牧厨卫股份有限公司 | Electroplating pre-plating process for plastic metallization |
| CN114592176B (en) * | 2021-12-31 | 2023-02-21 | 核工业西南物理研究院 | Ion implantation method for replacing metal transition connection layer |
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