CN1075341A - Vertical metal industrial ion implantation machine of strong current - Google Patents
Vertical metal industrial ion implantation machine of strong current Download PDFInfo
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- CN1075341A CN1075341A CN 92100533 CN92100533A CN1075341A CN 1075341 A CN1075341 A CN 1075341A CN 92100533 CN92100533 CN 92100533 CN 92100533 A CN92100533 A CN 92100533A CN 1075341 A CN1075341 A CN 1075341A
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Abstract
Implanter of the present invention belongs to electric physical unit, relates to the ion implanted metal material process for modifying surface.The implanter bunch adopts vertical, uses high current large beam spot ion source, and the workpiece target utilizes the three-dimensional transmission of straight cooling type.Compared with prior art, simple in structure, operation easily, installed capacity increases, the production efficiency height, cost reduces, and save energy can satisfy the mass industrial production needs.Utilize implanter of the present invention that metal material surface is carried out ion implantation modification and show,, processed workpiece is improved work-ing life exponentially improving that cutter, mould, titanium artificial joint etc. are wear-resistant, having obtained unusual effect aspect the erosion resistance.
Description
Industrial ionic implanter of the present invention belongs to the electric physical unit that the ion implanted metal material surface modification is used.
The existing equipment that is used for carrying out metal surface properties modification is to adopt the accelerator that traditional nuclear physics experiment uses and the pattern of semi-conductor implanter invariably, and bunch is horizontal.In the bunch of these equipment, all use acceleration tube, magnetic analyzer and beam scanning system unlimitedly.Therefore, not only the device structure complexity, involve great expense, clamping processed workpiece difficulty, workman be not easy to operate, and again because of ion beam current little (to nitrogen general≤5mA), the bundle spot is little (general≤50cm
2), causing inefficiency, the workpiece cost height of processing is not suitable for industrial requirement and needs.For example the ion implanter of derwent publication Ltd's announcement in 1986 is exactly like this.Accompanying drawing one has provided the principle schematic of this machine structure.Mark among the figure (1) is an ion source; (2) be the ionic fluid extraction system; (3) be magnetic analyzer; (4) for limiting the grating of ion beam width; (5) be ion accelerating tube; (6) for making the lens focus system of focusing of ion beam; (7) be ion beam scanning systems with (8); (9) be target; (10) be metal sample.This machine is working gas with oxygen, and ion energy is 10～200kev, and ion beam current is less than 1mA.
The objective of the invention is to, create relatively simple for structure, an easy operation, production efficiency height, low cost product, the not only ion implantation apparatus used of the industrial production of save energy but also non-environmental-pollution.
Unlike the prior art, the invention is characterized in, on apparatus structure, cancelled the acceleration tube in the general implanter, magnetic analyzer, ion beam scanning systems, grating and lens focus system.Main frame only is made of ion source, push-pull valve, vacuum chamber, workpiece target and transmission rig thereof and measurement target.And on bunch was arranged, converted horizontal was vertical configuration structure.Like this, compare apparatus structure with existing implanter and greatly simplify, cost reduces significantly, and operation all becomes convenient with operation.After particularly bunch is taked vertical configuration, reduced requirement widely, solved the practical difficulty of clamping workpiece workpiece target transmission rig.
The feature of implanter of the present invention is that also the ion source that is adopted not is the conventional ion source of using in the general implanter, but satisfies industrial requirement and the high current large beam spot ion source of particular design.Its line, bundle spot are generally several times of existing implanter.Its ion beam current of implanter for example of the present invention (to nitrogen) can reach 20mA, and the bundle spot can reach 300cm
2Therefore can improve working efficiency, the reduction technology cost of implanter effectively, be significantly improved the workpiece work-ing life after save energy, the processing, have the significant social economic benefit.
Implanter of the present invention partly is made of main frame, vacuum system, power supply system, control panel, supervisory control desk and deionized water cooling-cycle apparatus etc.
Main frame partly is made of ion source, high vacuum push-pull valve, vacuum chamber, workpiece target and transmission rig thereof and measurement target etc.
Ion source is a high current large beam spot ion source.Its basic parameter index is: ion energy 50～100kev; Line (to nitrogen) 5～20mA; The bundle spot is a garden shape, and the place can reach φ 200mm at the workpiece target; In bundle spot scope, the beam current density skewness can reach ± (25～30) %; Ionic fluid can adopt three electrode acceleration and deceleration to draw or four electrode secondaries quicken to draw, and allows stable state to move continuously.
Vacuum chamber length is about 1.2 times of vacuum chamber diameter, interior dress workpiece target and transmission rig.
The workpiece target can three-dimensional transmission, i.e. rotation, horizontal reciprocating movement and inclination, and adopt the direct water-cooling mode.
Measure target and can carry out the one dimension horizontal reciprocating movement, be used for measuring ion beam spot size, beam current density distribution and implantation temperature.
Vacuum system is given by high vacuum unit, vacuum chamber and is taken out mechanical pump, vacuum valve and air compressor etc. and form.The high vacuum unit is made up of diffusion pump and prime mechanical pump thereof, is arranged on a side of vacuum chamber.Configuration is given and is taken out mechanical pump below vacuum chamber.With the high vacuum push-pull valve vacuum chamber and ion source are separated.All valve all adopts operated pneumatic valve.The quiet vacuum tightness of implanter vacuum chamber is not less than 1 * 10
-3Pa, the working vacuum degree is not less than 4 * 10
-3Pa.
Power supply system comprises that positive high voltage power supply, secondary quicken high-voltage power supply, negative high voltage power source, arc voltage power supply, heater supply, High-Voltage Insulation platform and high voltage isolating transformer etc.Positive high voltage power supply, arc voltage power supply and heater supply all are arranged at the inside of High-Voltage Insulation platform shell.The high voltage isolating transformer device is below the High-Voltage Insulation platform.Secondary accelerating power source and negative high voltage power source then are arranged on a side of implanter high vacuum unit.The stability of all high-voltage power supplies was 5% in 2 hours.The rated value direct current of positive high voltage power supply is 120KV, and the permission load current is 50mA.The rated value direct current that secondary quickens high-voltage power supply is 60KV, and the permission load current is 20mA.The rated value of negative high voltage power source is 20KV, and the permission load current is 20mA.The rated value direct current of arc voltage power supply is 150V, and outward current is 20A.The rated value of heater supply exchanges and is 15V, and outward current is 200A.
Control panel is made up of controlling elements and voltate regulator etc., bears the each several part power power supply to implanter.Supervisory control desk includes control and operating system, and vacuum and state of temperature show, high-voltage parameter, line and implantation dosage system of supervision etc.
The deionized water circulation device is born to the parts that are in noble potential and is supplied with water coolant.Comprise water tank, water pump, self-circulation cooling machine and three high pressure water choke coils (high pressure water choke coil, secondary quicken water choke coil and negative high voltage water choke coil) etc.
Accompanying drawing two has provided industrial ionic implanter main machine structure synoptic diagram of the present invention.(1) is high current large beam spot ion source among the figure; (2) for placing the high vacuum push-pull valve between ion source and the vacuum chamber; (3) be vacuum chamber; (4) for measuring target; (5) be workpiece target and transmission rig.Accompanying drawing three is an industrial ionic implanter structure front view of the present invention.(1) is the big spot beam ion of high current source among the figure; (2) be the high vacuum push-pull valve; (3) be vacuum chamber; (4) for measuring target; (6) for giving, vacuum chamber takes out mechanical pump; (7) be support; (8) be negative high voltage water choke coil; (9) be diffusion pump; (12) quicken the water choke coil for secondary; (13) be high pressure and gas circuit wall bushing; (15) be the implanter screening can; (17) arrange with branch water for cooling; (18) be gas circuit; (19) be the High-Voltage Insulation platform; (20) be the pneumatic main valve of diffusion pump; (21) be water-cooled tube; (26) for dragging the motor of measuring target (4) horizontal shift.
Accompanying drawing four is an industrial ionic implanter structure vertical view of the present invention.
(5) are workpiece target and transmission rig among the figure;
(10) be mechanical pump (the prime mechanical pump of diffusion pump) in the high vacuum unit;
(11) be compressor;
(14) be the high pressure water choke coil;
(16) be secondary accelerating power source and negative high voltage power source.
(21) be water-cooled tube.
Accompanying drawing five has provided head four electrodes of industrial ionic implanter heated filament type of the present invention, cusp field bucket type ion source, the electric hookup of secondary speeding-up ion extraction system.
Square frame among the figure (1) is a heater supply; Square frame (2) is the arc voltage power supply; Square frame (3) is an accelerating power source; Square frame (4) is the secondary accelerating power source; Square frame (5) is the deceleration power supply; Label (6) is an anode; (7) be the filament cathode; (8) be accelerating electrode; (9) be the secondary accelerating electrode; (10) be decelerating electrode; (11) be ground-electrode.
Ion source scratch start start-up course is as follows: give ion source discharge chamber inflated with nitrogen earlier, add filament voltage (1) for then filament electrode (7), for anode (6) adds arc voltage (2); Produce low-temperature plasma in discharge chamber, for accelerating electrode (8) adds positive high voltage (3), quicken high pressure (4) and add negative high voltage (5) for decelerating electrode (10) for secondary accelerating electrode (9) adds secondary, then ion is drawn by electric field and is quickened to form ionic fluid.
Because the electric hookup and the accompanying drawing five of three electrode acceleration and deceleration ion extraction systems of heated filament type, cusp field, bucket type ion source head are similar, (removing secondary accelerating electrode and power supply) be not so draw again.
Accompanying drawing six is in the implanter vacuum chamber of the present invention, the vertical section structure synoptic diagram of workpiece target and transmission rig thereof.(3) are vacuum chamber among the figure; (22) be the workpiece target disc; (23) be the workpiece target disc; (23) for dragging the motor that target disc (22) rotates; (24) be the mouth of taking out of vacuum chamber forepump; (25) be ionic fluid; (27) be energy fixed electrical machinery (23) and the transmission rod and the motor that can make its horizontal shift; (29) be the water-cooled tube loop.
Accompanying drawing seven is in the implanter vacuum chamber of the present invention, the horizontal profile structure synoptic diagram of workpiece target and transmission rig thereof.(3) are vacuum chamber among the figure; (23) for dragging the motor of target disc (22); (28) transmission rig for workpiece target scarp is made of turbine worm and motor etc.; (30) bleeding point of bleeding usefulness for vacuum (3) for high vacuum unit (10) and (9).
Industrial ionic implanter working process of the present invention is as follows:
The work beginning starts high vacuum unit (10) and (9) earlier, opens the valve of vacuum chamber (3) then, and pending clamping workpiece to workpiece target (5), is closed valve.Start vacuum chamber and take out mechanical pump (16) in advance, vacuum chamber (3) is bled.When treating that this chamber for low-vacuum degree reaches a certain value, close to give and take out mechanical pump (16).Start compressor (11) and open diffusion pump main valve (20) and high vacuum push-pull valve (2), allow the high vacuum unit continue vacuum chamber (3) is vacuumized.When the indoor quiet vacuum tightness of vacuum reaches the needed value of processing workpiece, infeed an amount of working gas (being generally nitrogen) by the pneumatic cylinder in the High-Voltage Insulation platform (19) to ion source (1), then scratch start starting ion source (1).So at the indoor generation low-temperature plasma of ion source discharge, intense pulsed ion beam is drawn and quickened to form to ion by strong electrostatic field simultaneously, the pending workpiece on the bombardment workpiece target.For guaranteeing that ion is injected on the workpiece uniformly, according to the size and the shape of workpiece, take different workpiece target type of drive, thereby realized ion implantation modification workpiece.After disposing, make ion source (1) blow-out, remove high pressure.Close high vacuum push-pull valve (2) and diffusion pump main valve (20) between ion source and vacuum chamber (3), realize the automatic deflation of vacuum chamber by supervisory control desk control magnetic valve.Open the vacuum chamber valve, pull down the workpiece of handling well, load onto pending new workpiece, close valve, start and take out mechanical pump in advance, following process circulation is carried out.
With industrial ionic implanter of the present invention, processing has obtained obvious effects to metal surface properties modification, and the workpiece after the processing can improve several times work-ing life.
Embodiment: developed two kinds of industrial ionic implanters with the present invention.
Example 1, GLZ-100E industrial ionic implanter
The key technical indexes: vacuum chamber diameter phi 700mm, quiet vacuum tightness 1 * 10
-3Pa, working vacuum degree 4 * 10
-3Pa adopts heated filament type cusp field bucket type ion source, four electrode secondary speeding-up ion extraction systems.Ion energy is 100kev, line 10mA, and bundle spot φ 200mm, in φ 160mm scope, the beam current density ununiformity is ± 25%.In the high vacuum unit, adopt the 2X-30 mechanical pump, jk-300 oil diffusion pump, vacuum chamber give takes out pump employing 2X-15 mechanical pump.
It is ion-implanted surface-modified that this machine of utilization carries out nitrogen to pinion cutter, improved 5～8 times cutter life.The ion implantation extrusion mould surface modification of nitrogen also obtains positive effect.
Example 2, GLZ-100H ion implanter
The key technical indexes: vacuum chamber diameter phi 1000mm, quiet vacuum tightness 5 * 10
-4Pa, working vacuum degree 2 * 10
-3Pa.Adopt heated filament type cusp field bucket type ion source, acceleration and deceleration three electrode ion extraction systems.Ion energy 80kev, line 15mA, bundle spot φ 160mm, beam current density ununiformity ± 35%.
Adopt 2X-30 mechanical pump, jk-400 oil diffusion pump in the high vacuum unit.Vacuum chamber gives takes out pump employing 2X-15 mechanical pump.Utilize this machine that various workpieces has been carried out the test of nitrogen ion implantation modification, workpiece has improved more than 2 times work-ing life.
Claims (4)
1, a kind of by main frame, vacuum system, power supply system, control panel, the metal industry ion implanter that supervisory control desk and deionized water cooling-cycle apparatus etc. partly constitute, it is characterized in that the high current large beam spot ion source of main frame by top, middle vacuum chamber by high vacuum push-pull valve and bottom joins and constitutes one, in the vacuum chamber, be on the centre channel of ionic fluid at position on the lower side, center, device has the workpiece target, can realize the three-dimensional fix of workpiece target by transmission rig, and at the center on the upper side position, be on the centre channel of ionic fluid, device has the measurement target, can realize that by means of transmission rig the one dimension in the horizontal plane moves.
2, by the described implanter of claim 1, it is characterized in that the used high current large beam spot ion source of main frame is a heated filament type cusp field, the bucket type ion source that four electrode secondary speeding-up ions are drawn or three electrode acceleration and deceleration ions are drawn.
3, by the described implanter of claim 2, it is characterized in that, the workpiece target is made of target disc and the motor that drags its rotation, realize the three-dimensional fix of target in vacuum chamber by means of two groups of transmission rigs, wherein by one group of transmission rod mechanism and the outer dragging motor of vacuum chamber, realize the horizontal location of target,, realize the space sloped position of target again by another group turbine worm transmission rig and outdoor dragging motor.
4, by the described implanter of claim 3, it is characterized in that measuring target is to realize simultaneously that ion beam spot size, beam current density distribute and the integrated measurement target of three kinds of measurements of implantation temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92100533 CN1075341A (en) | 1992-02-13 | 1992-02-13 | Vertical metal industrial ion implantation machine of strong current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92100533 CN1075341A (en) | 1992-02-13 | 1992-02-13 | Vertical metal industrial ion implantation machine of strong current |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1075341A true CN1075341A (en) | 1993-08-18 |
Family
ID=4938652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92100533 Pending CN1075341A (en) | 1992-02-13 | 1992-02-13 | Vertical metal industrial ion implantation machine of strong current |
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|---|---|
| CN (1) | CN1075341A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1045637C (en) * | 1995-11-15 | 1999-10-13 | 哈尔滨工业大学 | Plasma immersion ion implantation apparatus for material surface modifying |
| CN1300372C (en) * | 2004-09-06 | 2007-02-14 | 珠海市恩博金属表面强化有限公司 | Method for processing milling cutter used for printed circuit board by ion implantation technology |
| CN1316059C (en) * | 2004-09-06 | 2007-05-16 | 珠海市恩博金属表面强化有限公司 | Process for treating drilling bit used for printed circuit board by ion implantation technology |
| CN100344787C (en) * | 2004-07-02 | 2007-10-24 | 南京理工大学 | Method for producing gradient wear resistant layer from titanium oxide to titanium nitride on surface of titanium alloy artificial joint head |
| CN101851747B (en) * | 2009-03-30 | 2012-08-29 | 核工业西南物理研究院 | High-current metal ion source |
| CN105448371A (en) * | 2015-11-20 | 2016-03-30 | 中国电子科技集团公司第四十八研究所 | High voltage protection and ray shield system of electrostatic field accelerated high energy ion implantation machine |
| CN106932808A (en) * | 2015-12-30 | 2017-07-07 | 核工业西南物理研究院 | A kind of special-shaped waterway structure of the cold calorimetric target big flow of long pulse active water |
| CN108531872A (en) * | 2018-08-07 | 2018-09-14 | 常州市知豆信息科技有限公司 | A kind of double-ion beam metal coating automation equipment |
| CN115637414A (en) * | 2022-10-31 | 2023-01-24 | 江苏省特种设备安全监督检验研究院 | Ultrasonic-assisted ion implantation device and processing method |
-
1992
- 1992-02-13 CN CN 92100533 patent/CN1075341A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1045637C (en) * | 1995-11-15 | 1999-10-13 | 哈尔滨工业大学 | Plasma immersion ion implantation apparatus for material surface modifying |
| CN100344787C (en) * | 2004-07-02 | 2007-10-24 | 南京理工大学 | Method for producing gradient wear resistant layer from titanium oxide to titanium nitride on surface of titanium alloy artificial joint head |
| CN1300372C (en) * | 2004-09-06 | 2007-02-14 | 珠海市恩博金属表面强化有限公司 | Method for processing milling cutter used for printed circuit board by ion implantation technology |
| CN1316059C (en) * | 2004-09-06 | 2007-05-16 | 珠海市恩博金属表面强化有限公司 | Process for treating drilling bit used for printed circuit board by ion implantation technology |
| CN101851747B (en) * | 2009-03-30 | 2012-08-29 | 核工业西南物理研究院 | High-current metal ion source |
| CN105448371A (en) * | 2015-11-20 | 2016-03-30 | 中国电子科技集团公司第四十八研究所 | High voltage protection and ray shield system of electrostatic field accelerated high energy ion implantation machine |
| CN106932808A (en) * | 2015-12-30 | 2017-07-07 | 核工业西南物理研究院 | A kind of special-shaped waterway structure of the cold calorimetric target big flow of long pulse active water |
| CN106932808B (en) * | 2015-12-30 | 2023-07-14 | 核工业西南物理研究院 | Long pulse initiative water-cooling heat target large-flow special-shaped waterway structure |
| CN108531872A (en) * | 2018-08-07 | 2018-09-14 | 常州市知豆信息科技有限公司 | A kind of double-ion beam metal coating automation equipment |
| CN108531872B (en) * | 2018-08-07 | 2018-11-06 | 常州市知豆信息科技有限公司 | A kind of double-ion beam metal coating automation equipment |
| CN115637414A (en) * | 2022-10-31 | 2023-01-24 | 江苏省特种设备安全监督检验研究院 | Ultrasonic-assisted ion implantation device and processing method |
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| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |