CN120604523A - 固体摄像装置以及摄像装置 - Google Patents

固体摄像装置以及摄像装置

Info

Publication number
CN120604523A
CN120604523A CN202480009573.2A CN202480009573A CN120604523A CN 120604523 A CN120604523 A CN 120604523A CN 202480009573 A CN202480009573 A CN 202480009573A CN 120604523 A CN120604523 A CN 120604523A
Authority
CN
China
Prior art keywords
pixel
signal
solid
pixels
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480009573.2A
Other languages
English (en)
Chinese (zh)
Inventor
芳贺显一
鬼头崇泰
生熊诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN120604523A publication Critical patent/CN120604523A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202480009573.2A 2023-01-31 2024-01-26 固体摄像装置以及摄像装置 Pending CN120604523A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202363442311P 2023-01-31 2023-01-31
US202363442317P 2023-01-31 2023-01-31
US63/442,317 2023-01-31
US63/442,311 2023-01-31
PCT/JP2024/002494 WO2024162221A1 (ja) 2023-01-31 2024-01-26 固体撮像装置および撮像装置

Publications (1)

Publication Number Publication Date
CN120604523A true CN120604523A (zh) 2025-09-05

Family

ID=92146748

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202480009573.2A Pending CN120604523A (zh) 2023-01-31 2024-01-26 固体摄像装置以及摄像装置
CN202480009574.7A Pending CN120615336A (zh) 2023-01-31 2024-01-26 固体摄像装置以及摄像装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202480009574.7A Pending CN120615336A (zh) 2023-01-31 2024-01-26 固体摄像装置以及摄像装置

Country Status (4)

Country Link
US (2) US20250350857A1 (https=)
JP (2) JPWO2024162221A1 (https=)
CN (2) CN120604523A (https=)
WO (2) WO2024162220A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2786665B2 (ja) * 1989-04-14 1998-08-13 株式会社東芝 電荷転送装置
JP5419659B2 (ja) * 2009-12-04 2014-02-19 キヤノン株式会社 撮像装置
JP2013090127A (ja) * 2011-10-18 2013-05-13 Olympus Corp 固体撮像装置および撮像装置
CN105791715B (zh) * 2016-03-10 2018-09-18 长春长光辰芯光电技术有限公司 高动态范围图像传感器像素的全局快门控制方法
US11431926B2 (en) * 2018-11-09 2022-08-30 Semiconductor Components Industries, Llc Image sensors having high dynamic range imaging pixels
US11165977B2 (en) * 2019-07-22 2021-11-02 Semiconductor Components Industries, Llc Imaging systems and methods for generating high dynamic range images
CN114586338B (zh) * 2019-11-29 2025-09-16 索尼半导体解决方案公司 半导体装置、摄像元件和电子设备
CN115066887B (zh) * 2020-02-18 2025-10-21 新唐科技日本株式会社 固体摄像装置以及利用固体摄像装置的摄像装置
WO2021235101A1 (ja) * 2020-05-20 2021-11-25 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
CN117441346A (zh) * 2021-06-09 2024-01-23 新唐科技日本株式会社 固体摄像装置、摄像装置及测距摄像装置

Also Published As

Publication number Publication date
JPWO2024162221A1 (https=) 2024-08-08
WO2024162220A1 (ja) 2024-08-08
WO2024162221A1 (ja) 2024-08-08
US20250350857A1 (en) 2025-11-13
JPWO2024162220A1 (https=) 2024-08-08
US20250344000A1 (en) 2025-11-06
CN120615336A (zh) 2025-09-09

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