CN119343858A - 半导体装置以及电力变换装置 - Google Patents

半导体装置以及电力变换装置 Download PDF

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Publication number
CN119343858A
CN119343858A CN202280096899.4A CN202280096899A CN119343858A CN 119343858 A CN119343858 A CN 119343858A CN 202280096899 A CN202280096899 A CN 202280096899A CN 119343858 A CN119343858 A CN 119343858A
Authority
CN
China
Prior art keywords
current
voltage
semiconductor element
period
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280096899.4A
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English (en)
Chinese (zh)
Inventor
河原知洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN119343858A publication Critical patent/CN119343858A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
CN202280096899.4A 2022-06-21 2022-06-21 半导体装置以及电力变换装置 Pending CN119343858A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/024679 WO2023248335A1 (ja) 2022-06-21 2022-06-21 半導体装置及び電力変換装置

Publications (1)

Publication Number Publication Date
CN119343858A true CN119343858A (zh) 2025-01-21

Family

ID=89379499

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280096899.4A Pending CN119343858A (zh) 2022-06-21 2022-06-21 半导体装置以及电力变换装置

Country Status (5)

Country Link
US (1) US20250364893A1 (https=)
JP (1) JPWO2023248335A1 (https=)
CN (1) CN119343858A (https=)
DE (1) DE112022007401T5 (https=)
WO (1) WO2023248335A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026042123A1 (ja) * 2024-08-19 2026-02-26 三菱電機株式会社 半導体素子の駆動回路および電力変換装置
JP2026068940A (ja) * 2024-10-11 2026-04-23 株式会社三社電機製作所 半導体デバイスの温度推定方法
JP2026068923A (ja) * 2024-10-11 2026-04-23 株式会社三社電機製作所 半導体デバイスの温度推定装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2615467B1 (en) * 2012-01-11 2014-06-18 ABB Research Ltd. System and method for monitoring in real time the operating state of an IGBT device
JP6171599B2 (ja) * 2013-06-11 2017-08-02 サンケン電気株式会社 半導体装置及びその制御方法
CN104090224B (zh) * 2014-07-18 2016-10-05 浙江大学 一种功率二极管模块工作结温的在线检测系统及检测方法
GB2549934A (en) * 2016-04-28 2017-11-08 Reinhausen Maschf Scheubeck Junction temperature and current sensing
JP6885862B2 (ja) * 2017-12-28 2021-06-16 ルネサスエレクトロニクス株式会社 電力変換装置
DE112021007901T5 (de) * 2021-06-29 2024-04-18 Mitsubishi Electric Corporation Halbleitervorrichtung und Leistungsumwandlungsvorrichtung

Also Published As

Publication number Publication date
JPWO2023248335A1 (https=) 2023-12-28
DE112022007401T5 (de) 2025-04-03
WO2023248335A1 (ja) 2023-12-28
US20250364893A1 (en) 2025-11-27

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