CN1190825C - Method for forming shallow junction - Google Patents
Method for forming shallow junction Download PDFInfo
- Publication number
- CN1190825C CN1190825C CN 02112148 CN02112148A CN1190825C CN 1190825 C CN1190825 C CN 1190825C CN 02112148 CN02112148 CN 02112148 CN 02112148 A CN02112148 A CN 02112148A CN 1190825 C CN1190825 C CN 1190825C
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- CN
- China
- Prior art keywords
- silicide
- shallow junction
- impurity
- annealing
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 02112148 CN1190825C (en) | 2002-06-20 | 2002-06-20 | Method for forming shallow junction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 02112148 CN1190825C (en) | 2002-06-20 | 2002-06-20 | Method for forming shallow junction |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1385880A CN1385880A (en) | 2002-12-18 |
CN1190825C true CN1190825C (en) | 2005-02-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 02112148 Expired - Fee Related CN1190825C (en) | 2002-06-20 | 2002-06-20 | Method for forming shallow junction |
Country Status (1)
Country | Link |
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CN (1) | CN1190825C (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9076730B2 (en) * | 2012-12-12 | 2015-07-07 | Fudan University | Metal silicide thin film, ultra-shallow junctions, semiconductor device and method of making |
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2002
- 2002-06-20 CN CN 02112148 patent/CN1190825C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN1385880A (en) | 2002-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG (GROUP) CO., LTD.; SHANGHAI IC R Free format text: FORMER OWNER: SHANGHAI HUAHONG (GROUP) CO., LTD. Effective date: 20060901 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20060901 Address after: 201203 No. 177 blue wave road, Zhangjiang hi tech park, Shanghai, Pudong New Area Co-patentee after: Shanghai integrated circuit research and Development Center Co., Ltd. Patentee after: Shanghai Huahong (Group) Co., Ltd. Address before: 18, Huaihai Road, Shanghai, No. 200020, building 918 Patentee before: Shanghai Huahong (Group) Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050223 Termination date: 20140620 |
|
EXPY | Termination of patent right or utility model |