CN118661425A - 摄像装置 - Google Patents

摄像装置 Download PDF

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Publication number
CN118661425A
CN118661425A CN202280091176.5A CN202280091176A CN118661425A CN 118661425 A CN118661425 A CN 118661425A CN 202280091176 A CN202280091176 A CN 202280091176A CN 118661425 A CN118661425 A CN 118661425A
Authority
CN
China
Prior art keywords
voltage
transistor
circuit
wiring
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280091176.5A
Other languages
English (en)
Chinese (zh)
Inventor
船桥正美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN118661425A publication Critical patent/CN118661425A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/709Circuitry for control of the power supply
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202280091176.5A 2022-03-03 2022-12-23 摄像装置 Pending CN118661425A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-032956 2022-03-03
JP2022032956 2022-03-03
PCT/JP2022/047745 WO2023166832A1 (ja) 2022-03-03 2022-12-23 撮像装置

Publications (1)

Publication Number Publication Date
CN118661425A true CN118661425A (zh) 2024-09-17

Family

ID=87883690

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280091176.5A Pending CN118661425A (zh) 2022-03-03 2022-12-23 摄像装置

Country Status (4)

Country Link
US (1) US20240405038A1 (https=)
JP (1) JPWO2023166832A1 (https=)
CN (1) CN118661425A (https=)
WO (1) WO2023166832A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6323813B2 (ja) * 2014-12-26 2018-05-16 パナソニックIpマネジメント株式会社 撮像装置
JP6562243B2 (ja) * 2015-02-17 2019-08-21 パナソニックIpマネジメント株式会社 撮像装置
WO2019167551A1 (ja) * 2018-02-28 2019-09-06 パナソニックIpマネジメント株式会社 撮像装置

Also Published As

Publication number Publication date
WO2023166832A1 (ja) 2023-09-07
JPWO2023166832A1 (https=) 2023-09-07
US20240405038A1 (en) 2024-12-05

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