CN118591876A - 固化性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法 - Google Patents

固化性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法 Download PDF

Info

Publication number
CN118591876A
CN118591876A CN202380018727.XA CN202380018727A CN118591876A CN 118591876 A CN118591876 A CN 118591876A CN 202380018727 A CN202380018727 A CN 202380018727A CN 118591876 A CN118591876 A CN 118591876A
Authority
CN
China
Prior art keywords
resin film
curable resin
semiconductor chip
wafer
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380018727.XA
Other languages
English (en)
Chinese (zh)
Inventor
贝沼玲菜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Priority claimed from PCT/JP2023/001451 external-priority patent/WO2023145588A1/ja
Publication of CN118591876A publication Critical patent/CN118591876A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/141—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being on at least the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2429/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Derivatives of such polymer
    • C08J2429/14—Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2433/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2467/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
    • C08J2483/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/16—Solid spheres
    • C08K7/18—Solid spheres inorganic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/04—Ingredients treated with organic substances

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dicing (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Laminated Bodies (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN202380018727.XA 2022-01-28 2023-01-19 固化性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法 Pending CN118591876A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2022-012254 2022-01-28
JP2022012257 2022-01-28
JP2022-012257 2022-01-28
PCT/JP2023/001451 WO2023145588A1 (ja) 2022-01-28 2023-01-19 硬化性樹脂フィルム、複合シート、半導体チップ、及び半導体チップの製造方法

Publications (1)

Publication Number Publication Date
CN118591876A true CN118591876A (zh) 2024-09-03

Family

ID=87396544

Family Applications (4)

Application Number Title Priority Date Filing Date
CN202380018727.XA Pending CN118591876A (zh) 2022-01-28 2023-01-19 固化性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法
CN202380018732.0A Pending CN118613909A (zh) 2022-01-28 2023-01-19 热固性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法
CN202380018739.2A Pending CN118743014A (zh) 2022-01-28 2023-01-19 固化性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法
CN202310102532.5A Pending CN116515238A (zh) 2022-01-28 2023-01-19 固化性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
CN202380018732.0A Pending CN118613909A (zh) 2022-01-28 2023-01-19 热固性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法
CN202380018739.2A Pending CN118743014A (zh) 2022-01-28 2023-01-19 固化性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法
CN202310102532.5A Pending CN116515238A (zh) 2022-01-28 2023-01-19 固化性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法

Country Status (4)

Country Link
JP (1) JP2023110880A (https=)
KR (1) KR20230116660A (https=)
CN (4) CN118591876A (https=)
TW (1) TW202342601A (https=)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5830250B2 (ja) 2011-02-15 2015-12-09 日東電工株式会社 半導体装置の製造方法
JP2015092594A (ja) 2014-12-10 2015-05-14 日東電工株式会社 保護層形成用フィルム

Also Published As

Publication number Publication date
CN118613909A (zh) 2024-09-06
JP2023110880A (ja) 2023-08-09
CN116515238A (zh) 2023-08-01
TW202342601A (zh) 2023-11-01
KR20230116660A (ko) 2023-08-04
CN118743014A (zh) 2024-10-01

Similar Documents

Publication Publication Date Title
CN103620742B (zh) 粘接膜、切割芯片接合膜及使用该切割芯片接合膜的半导体加工方法
TWI634185B (zh) 保護膜形成用複合片、附保護膜之晶片、及附保護膜之晶片的製造方法
US9434865B2 (en) Adhesive composition, an adhesive sheet and a production method of a semiconductor device
TW202027163A (zh) 半導體裝置之製造方法
WO2012026431A1 (ja) 接着シート及び半導体チップの実装方法
CN113396057B (zh) 保护膜形成用片及基板装置的制造方法
CN110461973B (zh) 膜状粘合剂复合片及半导体装置的制造方法
WO2013015012A1 (ja) 半導体加工シート用基材フィルム、半導体加工シート及び半導体装置の製造方法
TWI809132B (zh) 半導體晶片的製造方法及半導體裝置的製造方法
CN114730707A (zh) 半导体装置制造用片及带膜状粘合剂的半导体芯片的制造方法
JP7378678B1 (ja) 硬化性樹脂フィルム、複合シート、半導体チップ、及び半導体チップの製造方法
CN115605980A (zh) 半导体装置的制造方法
TW202442776A (zh) 熱硬化性樹脂薄膜、複合薄片、半導體晶片，及半導體晶片之製造方法
CN118591876A (zh) 固化性树脂膜、复合片、半导体芯片、以及半导体芯片的制造方法
TW202342600A (zh) 硬化性樹脂薄膜、複合薄片、半導體晶片及半導體晶片之製造方法
CN112839767A (zh) 带有第一保护膜的工件加工物的制造方法
TWI838470B (zh) 半導體背面密接膜及切晶帶一體型半導體背面密接膜
JP2025132486A (ja) 保護膜形成用複合シート及び半導体装置の製造方法
JP2025132491A (ja) 保護膜形成用複合シート及び半導体装置の製造方法
TW202610836A (zh) 保護膜形成用膜、保護膜形成用複合片、半導體裝置之製造方法及半導體裝置
JP2025154781A (ja) 保護膜形成用フィルム、保護膜形成用複合シート、半導体装置の製造方法、及び半導体装置
WO2026058931A1 (ja) フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法
CN114902377A (zh) 半导体芯片的制造方法
WO2026058941A1 (ja) フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法
JP2024139197A (ja) 保護膜付き半導体ウエハ、保護膜付き半導体チップ、半導体ウエハの保護方法、保護膜付き半導体ウエハの製造方法、及び複合シート

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination