CN118248538A - Thinning method of semiconductor wafer - Google Patents
Thinning method of semiconductor wafer Download PDFInfo
- Publication number
- CN118248538A CN118248538A CN202211687989.9A CN202211687989A CN118248538A CN 118248538 A CN118248538 A CN 118248538A CN 202211687989 A CN202211687989 A CN 202211687989A CN 118248538 A CN118248538 A CN 118248538A
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- Prior art keywords
- semiconductor wafer
- thinning
- grinding
- acid
- wafer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000000227 grinding Methods 0.000 claims abstract description 38
- 239000002253 acid Substances 0.000 claims abstract description 21
- 230000002378 acidificating effect Effects 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 238000005507 spraying Methods 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 63
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 2
- 239000003814 drug Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The thinning method of the semiconductor wafer comprises the following steps: cleaning a semiconductor wafer, wherein the semiconductor wafer is provided with a first surface and a second surface opposite to the first surface; attaching an acid-resistant film to the second surface of the semiconductor wafer; and controlling the grinding disc to grind the first surface, and spraying an acidic corrosive liquid to the first surface while grinding. The invention can reduce scratches and depressions formed in the thinning process of the semiconductor wafer, thereby improving the performance quality of the semiconductor wafer.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and in particular, to a method for thinning a semiconductor wafer.
Background
In the production process of semiconductor wafers, the thinning process is an important link in the process, and an acid etching method is generally adopted to enable the wafers to fully react with the liquid medicine. However, this method has the following disadvantages: because of the long soaking time, the thickness precision of the wafer in the solution is difficult to control, and the original scratches on the wafer can be corroded and amplified to form pits.
Accordingly, there is a need to provide an improved method for thinning semiconductor wafers that overcomes the above drawbacks.
Disclosure of Invention
The invention aims to provide a thinning method of a semiconductor wafer, which can reduce scratches and depressions formed in the thinning process of the semiconductor wafer, thereby improving the quality of the semiconductor wafer.
In order to achieve the above object, the thinning method of the semiconductor wafer of the present invention includes:
Cleaning a semiconductor wafer, wherein the semiconductor wafer is provided with a first surface and a second surface opposite to the first surface;
Attaching an acid-resistant film to the second surface of the semiconductor wafer; and
And controlling the grinding disc to grind the first surface, and spraying an acidic corrosive liquid to the first surface while grinding.
Compared with the prior art, the method for thinning the semiconductor wafer comprises the steps of firstly cleaning the semiconductor wafer, attaching an acid-resistant film on the second surface of the semiconductor wafer, which is not required to be thinned, grinding and thinning the first surface, and importantly, spraying an acidic corrosive liquid to the first surface during grinding, namely, combining the grinding with the acidic corrosive liquid, on one hand, corroding the first surface of the semiconductor wafer by the acidic corrosive liquid, and on the other hand, grinding and strickling the surface by a grinding disc, so that impurities and stains on the surface of the wafer can be removed, the pits and scratches on the surface of the wafer are reduced, and the uniformity of the thickness reduction of the wafer is ensured. Therefore, the wafer surface is flat, and particularly, the wafer surface has good effect on avoiding the generation of defects in the process of thinning the wafer from 0.5mm to below 0.2mm, so that the performance of the wafer is effectively improved, for example, when the wafer with less surface pits and flat surface is used for a display, the light emitting effect of the display is excellent.
Preferably, the grinding specifically includes: the rotating speed of the grinding disc is controlled to be 4800-5000rpm, and the feeding rate of the grinding disc is controlled to be 2-3 mu m/s.
Preferably, the grinding further comprises: controlling the grinding depth of the grinding disc on the first surface to be 0.5-1.0mm.
Preferably, the acidic corrosive liquid is hydrochloric acid or hydrofluoric acid.
Preferably, the acid-resistant film is a PET acid-resistant film coated with an acid-resistant adhesive.
Preferably, the polishing process further comprises cleaning the semiconductor wafer with deionized water after finishing the polishing process.
Preferably, the polishing process further comprises cleaning the semiconductor wafer with a weak base solution.
Detailed Description
The method for thinning a semiconductor wafer according to the present invention will be further described with reference to examples, but the present invention is not limited thereto. The method aims at providing the thinning method of the semiconductor wafer, which can reduce scratches and depressions formed in the thinning process of the semiconductor wafer, thereby improving the performance and quality of the semiconductor wafer.
In one embodiment of the method for thinning a semiconductor wafer of the present invention, the method comprises the steps of:
Cleaning a semiconductor wafer, wherein the semiconductor wafer is provided with a first surface and a second surface opposite to the first surface;
Attaching an acid-resistant film to the second surface of the semiconductor wafer; and
And controlling the grinding disc to grind the first surface, and spraying an acidic corrosive liquid to the first surface while grinding.
Compared with the prior art, the method for thinning the semiconductor wafer comprises the steps of firstly cleaning the semiconductor wafer, attaching an acid-resistant film on the second surface of the semiconductor wafer, which is not required to be thinned, grinding and thinning the first surface, and importantly, spraying an acidic corrosive liquid to the first surface during grinding, namely, combining the grinding with the acidic corrosive liquid, on one hand, corroding the first surface of the semiconductor wafer by the acidic corrosive liquid, and on the other hand, grinding and strickling the surface by a grinding disc, so that impurities and stains on the surface of the wafer can be removed, the pits and scratches on the surface of the wafer are reduced, and the uniformity of the thickness reduction of the wafer is ensured. Therefore, the wafer surface is flat, and particularly, the wafer surface has good effect on avoiding the generation of defects in the process of thinning the wafer from 0.5mm to below 0.2mm, so that the performance of the wafer is effectively improved, for example, when the wafer with less surface pits and flat surface is used for a display, the light emitting effect of the display is excellent.
Specifically, in the invention, the wafer is cleaned by deionized water, and the acid-resistant film is attached to a second surface (first surface) of the wafer opposite to the surface to be thinned, thereby playing a role in protection. In general, the acid-resistant film may be a PET acid-resistant film coated with an acid-resistant adhesive.
Then, the first surface of the semiconductor wafer is polished and acid etched. Specifically, the rotation speed of the grinding disc is controlled to be 4800-5000rpm, the feeding rate of the grinding wheel is controlled to be 2-3 mu m/s, and the grinding depth of the grinding disc on the first surface is controlled to be 0.5-1.0mm. An acidic etching solution is sprayed to the first surface while polishing. Specifically, the first surface is continuously sprayed with an acidic etching liquid using a nozzle device, which is capable of moderately etching the first surface of the wafer. Optionally, the acidic etching solution is hydrochloric acid or hydrofluoric acid. The grinding disc grinds and strickles to the first surface, can get rid of impurity and the stain on wafer surface, reduces the concave recess of wafer surface, the mar, guarantees the homogeneity of wafer thickness attenuate. Therefore, the processing mode of combining mechanical grinding and acid corrosion liquid phase enables the surface of the wafer to be flat, and particularly has good effect on avoiding the generation of defects in the process that the wafer is thinned from 0.5mm to below 0.2mm, so that the performance of the wafer is effectively improved, for example, when the wafer with less surface pits and flat surface is used for a display, the light emitting effect of the display is excellent.
Preferably, after finishing the finish grinding, the wafer is rinsed with deionized water, followed by rinsing the wafer with a weak base solution. For example, the neutralization of the acid and base is achieved by using a sodium hydroxide solution having a concentration of 5 to 10%. Finally, the product can be washed by water again and dried, so that the product can enter the next manufacturing flow.
Compared with the traditional corrosion thinning mode, the method and the device enable the surface to be thinned of the wafer to be flat through the treatment mode of combining mechanical grinding and acid corrosion liquid phase, so that the pits or scratches on the surface are reduced, and the performance of the wafer is improved.
The foregoing disclosure is only illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, which is defined by the appended claims.
Claims (7)
1. A thinning method of a semiconductor wafer is characterized by comprising the following steps:
Cleaning a semiconductor wafer, wherein the semiconductor wafer is provided with a first surface and a second surface opposite to the first surface;
Attaching an acid-resistant film to the second surface of the semiconductor wafer; and
And controlling the grinding disc to grind the first surface, and spraying an acidic corrosive liquid to the first surface while grinding.
2. The method for thinning a semiconductor wafer according to claim 1, wherein the polishing specifically comprises: the rotating speed of the grinding disc is controlled to be 4800-5000rpm, and the feeding rate of the grinding disc is controlled to be 2-3 mu m/s.
3. The method of thinning a semiconductor wafer according to claim 2, wherein the polishing further comprises: controlling the grinding depth of the grinding disc on the first surface to be 0.5-1.0mm.
4. The method for thinning a semiconductor wafer according to claim 1, wherein: the acidic corrosive liquid is hydrochloric acid or hydrofluoric acid.
5. The method for thinning a semiconductor wafer according to claim 1, wherein: the acid-resistant film is a PET acid-resistant film coated with acid-resistant adhesive.
6. The method for thinning a semiconductor wafer according to claim 1, wherein: and cleaning the semiconductor wafer by deionized water after finishing grinding.
7. The method for thinning a semiconductor wafer according to claim 1, wherein: and cleaning the semiconductor wafer by using a weak base solution after finishing grinding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211687989.9A CN118248538A (en) | 2022-12-23 | 2022-12-23 | Thinning method of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211687989.9A CN118248538A (en) | 2022-12-23 | 2022-12-23 | Thinning method of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118248538A true CN118248538A (en) | 2024-06-25 |
Family
ID=91551638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211687989.9A Pending CN118248538A (en) | 2022-12-23 | 2022-12-23 | Thinning method of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118248538A (en) |
-
2022
- 2022-12-23 CN CN202211687989.9A patent/CN118248538A/en active Pending
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