CN116525408A - Thinning method of silicon wafer - Google Patents
Thinning method of silicon wafer Download PDFInfo
- Publication number
- CN116525408A CN116525408A CN202210069685.XA CN202210069685A CN116525408A CN 116525408 A CN116525408 A CN 116525408A CN 202210069685 A CN202210069685 A CN 202210069685A CN 116525408 A CN116525408 A CN 116525408A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- grinding
- thinned
- thinning
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 106
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 106
- 239000010703 silicon Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004140 cleaning Methods 0.000 claims abstract description 36
- 238000000227 grinding Methods 0.000 claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002253 acid Substances 0.000 claims abstract description 11
- 230000002378 acidificating effect Effects 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- 238000005507 spraying Methods 0.000 claims abstract description 7
- 238000005498 polishing Methods 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229960000583 acetic acid Drugs 0.000 claims description 5
- 239000012362 glacial acetic acid Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 9
- 238000002156 mixing Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a thinning method of a silicon wafer, which comprises the following steps: pre-cleaning the silicon wafer to be thinned by using deionized water; sticking an acid-resistant film on a first surface of a pre-cleaned silicon wafer, wherein the first surface is a surface of the silicon wafer which does not need to be thinned; grinding the second surface of the pre-cleaned silicon wafer, and spraying an acidic corrosive liquid to the second surface while grinding, wherein the second surface is the surface of the silicon wafer to be thinned; and cleaning the ground silicon wafer. By adopting the technical scheme of the invention, the uniformity of thickness reduction of the silicon wafer can be ensured, the surface of the silicon wafer is smooth, the concave depression of the surface of the silicon wafer is effectively reduced, and the use effect is optimized.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a thinning method of a silicon wafer.
Background
In the production process of the silicon wafer, the thinning process treatment method is generally a groove type acid etching thinning process. In the whole acid etching process, the silicon wafer is fully reacted with the liquid medicine.
However, since the soaking time is long, the thickness precision of the silicon wafer in the thinning solution is difficult to control, the thickness of the silicon wafer is inconsistent, the surface of the silicon wafer is uneven, original scratches on the silicon wafer can be amplified, pits are correspondingly formed, the surface of the silicon wafer is concave, and when the silicon wafer is applied to a display, the display and the light-emitting effect are poor, so that the using effect is affected.
Disclosure of Invention
The technical problem to be solved by the embodiment of the invention is to provide the thinning method of the silicon wafer, which can ensure the thickness thinning uniformity of the silicon wafer, so that the surface of the silicon wafer is smooth, the concave depression of the surface of the silicon wafer is effectively reduced, and the use effect is optimized.
In order to solve the above technical problems, an embodiment of the present invention provides a method for thinning a silicon wafer, including:
pre-cleaning the silicon wafer to be thinned by using deionized water;
sticking an acid-resistant film on a first surface of a pre-cleaned silicon wafer, wherein the first surface is a surface of the silicon wafer which does not need to be thinned;
grinding the second surface of the pre-cleaned silicon wafer, and spraying an acidic corrosive liquid to the second surface while grinding, wherein the second surface is the surface of the silicon wafer to be thinned;
and cleaning the ground silicon wafer.
Further, the rotation speed of the polishing disk during polishing was 3000rpm, the feed rate of the grinding wheel was 2 to 3 μm/s, and the target polishing depth was 0.2 to 0.3mm.
Further, the polishing time is 20 to 30 seconds.
Further, the acidic corrosive liquid is formed by mixing nitric acid, glacial acetic acid and 60% hydrofluoric acid according to the proportion of 5:3:2, and the corrosion temperature is 25-30 ℃.
Further, the cleaning treatment of the polished silicon wafer specifically includes:
carrying out first cleaning treatment on the ground silicon wafer by using clear water;
and (3) performing secondary cleaning treatment on the ground silicon wafer by using a weak base solution, wherein the weak base solution is sodium hydroxide solution with the concentration of 5-10%.
Compared with the prior art, the embodiment of the invention provides a method for thinning a silicon wafer, which comprises the steps of firstly, pre-cleaning the silicon wafer to be thinned by using deionized water, and adhering an acid-resistant film on a first surface of the pre-cleaned silicon wafer, wherein the first surface is a surface of the silicon wafer which does not need thinning; then, grinding the second surface of the pre-cleaned silicon wafer, and spraying an acidic corrosive liquid to the second surface while grinding, wherein the second surface is the surface of the silicon wafer to be thinned; finally, cleaning the ground silicon wafer; therefore, uniformity of thickness reduction of the silicon wafer can be guaranteed, the surface of the silicon wafer is smooth, concave depressions on the surface of the silicon wafer are effectively reduced, and the use effect is optimized.
Drawings
Fig. 1 is a flowchart of a preferred embodiment of a method for thinning a silicon wafer according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
The embodiment of the invention provides a method for thinning a silicon wafer, referring to fig. 1, which is a flowchart of a preferred embodiment of the method for thinning a silicon wafer, and the method comprises steps S11 to S14:
step S11, pre-cleaning the silicon wafer to be thinned by using deionized water;
step S12, sticking an acid-resistant film on a first surface of the pre-cleaned silicon wafer, wherein the first surface is a surface of the silicon wafer which does not need to be thinned;
step S13, grinding a second surface of the pre-cleaned silicon wafer, and spraying an acidic corrosive liquid to the second surface while grinding, wherein the second surface is a surface of the silicon wafer to be thinned;
and step S14, cleaning the polished silicon wafer.
In the specific implementation, firstly, providing a silicon wafer to be thinned, carrying out pre-cleaning treatment on the silicon wafer to be thinned by using deionized water, and attaching an acid-resistant film on a first surface of the silicon wafer after the pre-cleaning treatment is finished, wherein the first surface is a surface of the silicon wafer (namely, a surface opposite to the surface of the silicon wafer to be thinned) which is not required to be thinned; then, grinding the second surface of the silicon wafer subjected to the pre-cleaning treatment, wherein the second surface is the surface of the silicon wafer to be thinned (namely the surface of the silicon wafer to be thinned), spraying an acidic corrosive liquid to the second surface of the silicon wafer subjected to the pre-cleaning treatment through a nozzle during the grinding treatment; finally, after the polishing process is completed, the polished silicon wafer is subjected to a cleaning process.
As an improvement of the scheme, the rotating speed of the grinding disc during grinding is 3000rpm, the feeding rate of the grinding wheel is 2-3 mu m/s, and the grinding target depth is 0.2-0.3 mm.
Specifically, in combination with the above embodiment, when the second surface of the silicon wafer after the pre-cleaning treatment is subjected to the polishing treatment, the set polishing parameters mainly include the rotation speed of the polishing disc, the feeding rate of the grinding wheel and the polishing target depth (i.e., the polishing depth when the second surface of the silicon wafer is polished), wherein the rotation speed of the polishing disc is 3000rpm, the feeding rate of the grinding wheel is in the range of 2 μm/s to 3 μm/s, and the polishing target depth is in the range of 0.2mm to 0.3mm.
As an improvement of the scheme, the grinding time is 20-30 s.
Specifically, in combination with the above embodiment, when the polishing treatment is performed on the second surface of the silicon wafer after the pre-cleaning treatment, the duration of the polishing treatment is in the range of 20 seconds to 30 seconds.
As improvement of the scheme, the acidic corrosive liquid is formed by mixing nitric acid, glacial acetic acid and 60% hydrofluoric acid according to the proportion of 5:3:2, and the corrosion temperature is 25-30 ℃.
Specifically, in combination with the above embodiment, the acidic etching solution sprayed on the second surface of the silicon wafer after the pre-cleaning treatment may be formed by mixing nitric acid, glacial acetic acid and 60% concentration hydrofluoric acid in a ratio of 5:3:2, and the etching temperature is controlled within a range of 25 ℃ to 30 ℃.
As an improvement of the scheme, the method for cleaning the ground silicon wafer specifically comprises the following steps:
carrying out first cleaning treatment on the ground silicon wafer by using clear water;
and (3) performing secondary cleaning treatment on the ground silicon wafer by using a weak base solution, wherein the weak base solution is sodium hydroxide solution with the concentration of 5-10%.
Specifically, in combination with the above embodiment, when the polished silicon wafer is subjected to the cleaning treatment after the polishing treatment, the polished silicon wafer may be subjected to the first cleaning treatment by using clean water, and after the completion of the first cleaning treatment, the polished silicon wafer may be subjected to the second cleaning treatment by using a weak base solution, where the weak base solution is a sodium hydroxide solution with a concentration of 5% -10%.
First, providing a silicon wafer to be thinned, carrying out pre-cleaning treatment on the silicon wafer to be thinned by using deionized water, and attaching an acid-resistant film on a first surface of the silicon wafer after the pre-cleaning treatment is finished; setting the rotating speed of a grinding disc to 3000rpm, the feeding rate of a grinding wheel to be in the range of 2-3 mu m/s, the grinding target depth to be in the range of 0.2-0.3 mm, grinding the second surface of the pre-cleaned silicon wafer, spraying an acid etching solution to the second surface of the pre-cleaned silicon wafer through a nozzle during the grinding, wherein the used acid etching solution is formed by mixing nitric acid, glacial acetic acid and 60% concentration hydrofluoric acid in the ratio of 5:3:2, the etching temperature is controlled to be in the range of 25-30 ℃, and the duration of the whole grinding treatment is in the range of 20-30 seconds; finally, after finishing the grinding treatment, firstly cleaning the ground silicon wafer for the first time by using clear water, and after finishing the first cleaning treatment, cleaning the ground silicon wafer for the second time by using weak base solution, wherein the weak base solution is sodium hydroxide solution with the concentration of 5% -10%.
In summary, in the method for thinning the silicon wafer provided by the embodiment of the invention, in the process of grinding the surface to be thinned of the silicon wafer, the acidic corrosive liquid is added into the grinding liquid, the surface to be thinned of the silicon wafer is scraped, impurities and stains on the surface of the silicon wafer can be removed, and the pits on the surface of the silicon wafer disappear, so that the pits on the surface of the silicon wafer are effectively reduced, and the grinding and corrosion effects are enhanced; meanwhile, the uniformity of thickness reduction of the silicon wafer can be ensured, so that the surface of the silicon wafer is smooth, particularly, the silicon wafer has a good effect on avoiding defects in the process of reducing the thickness of the silicon wafer from 0.5mm to below 0.2mm, and when the silicon wafer with less surface pits and smooth surface is used for a display, the display and light emitting effects are good, so that the use effect is optimized; in addition, the grinding process can be accelerated, the process time is shortened, and the production efficiency is improved.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (5)
1. The thinning method of the silicon wafer is characterized by comprising the following steps of:
pre-cleaning the silicon wafer to be thinned by using deionized water;
sticking an acid-resistant film on a first surface of a pre-cleaned silicon wafer, wherein the first surface is a surface of the silicon wafer which does not need to be thinned;
grinding the second surface of the pre-cleaned silicon wafer, and spraying an acidic corrosive liquid to the second surface while grinding, wherein the second surface is the surface of the silicon wafer to be thinned;
and cleaning the ground silicon wafer.
2. The method for thinning a silicon wafer according to claim 1, wherein the rotation speed of the polishing disk during polishing is 3000rpm, the feed rate of the grinding wheel is 2 to 3 μm/s, and the polishing target depth is 0.2 to 0.3mm.
3. The method for thinning a silicon wafer according to claim 1, wherein the grinding time is 20 to 30 seconds.
4. The method for thinning a silicon wafer according to claim 1, wherein the acidic etching solution is composed of nitric acid, glacial acetic acid and 60% hydrofluoric acid mixed in a ratio of 5:3:2, and the etching temperature is 25-30 ℃.
5. The method for thinning a silicon wafer according to claim 1, wherein the cleaning treatment of the polished silicon wafer comprises:
carrying out first cleaning treatment on the ground silicon wafer by using clear water;
and (3) performing secondary cleaning treatment on the ground silicon wafer by using a weak base solution, wherein the weak base solution is sodium hydroxide solution with the concentration of 5-10%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210069685.XA CN116525408A (en) | 2022-01-21 | 2022-01-21 | Thinning method of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210069685.XA CN116525408A (en) | 2022-01-21 | 2022-01-21 | Thinning method of silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116525408A true CN116525408A (en) | 2023-08-01 |
Family
ID=87403387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210069685.XA Pending CN116525408A (en) | 2022-01-21 | 2022-01-21 | Thinning method of silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116525408A (en) |
-
2022
- 2022-01-21 CN CN202210069685.XA patent/CN116525408A/en active Pending
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