CN118176591A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN118176591A
CN118176591A CN202280073151.2A CN202280073151A CN118176591A CN 118176591 A CN118176591 A CN 118176591A CN 202280073151 A CN202280073151 A CN 202280073151A CN 118176591 A CN118176591 A CN 118176591A
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China
Prior art keywords
film
electrode
source
semiconductor device
main surface
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Pending
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CN202280073151.2A
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Chinese (zh)
Inventor
中野佑纪
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Rohm Co Ltd
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Rohm Co Ltd
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Publication of CN118176591A publication Critical patent/CN118176591A/zh
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
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    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
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    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
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    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
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    • H10W70/40—Leadframes
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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
CN202280073151.2A 2021-11-05 2022-10-28 半导体装置 Pending CN118176591A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-181317 2021-11-05
JP2021181317 2021-11-05
PCT/JP2022/040498 WO2023080086A1 (ja) 2021-11-05 2022-10-28 半導体装置

Publications (1)

Publication Number Publication Date
CN118176591A true CN118176591A (zh) 2024-06-11

Family

ID=86241141

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280073151.2A Pending CN118176591A (zh) 2021-11-05 2022-10-28 半导体装置

Country Status (5)

Country Link
US (1) US20240282749A1 (https=)
JP (1) JPWO2023080086A1 (https=)
CN (1) CN118176591A (https=)
DE (1) DE112022004821T5 (https=)
WO (1) WO2023080086A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5594215B2 (ja) * 2011-03-31 2014-09-24 日本ゼオン株式会社 半導体装置及びその製造方法
JP2015222743A (ja) * 2014-05-22 2015-12-10 三菱電機株式会社 半導体装置
JP2017143126A (ja) * 2016-02-09 2017-08-17 ローム株式会社 電子装置および受発光装置
JP7201296B2 (ja) * 2018-02-06 2023-01-10 ローム株式会社 半導体装置およびその製造方法
CN115485858A (zh) * 2020-05-08 2022-12-16 罗姆股份有限公司 半导体装置
JP7473391B2 (ja) 2020-05-18 2024-04-23 岩井ファルマテック株式会社 陽圧監視システム
CN116830262A (zh) * 2021-03-18 2023-09-29 罗姆股份有限公司 宽带隙半导体装置

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JPWO2023080086A1 (https=) 2023-05-11
US20240282749A1 (en) 2024-08-22
WO2023080086A1 (ja) 2023-05-11
DE112022004821T5 (de) 2024-07-25

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