CN118137134A - Antenna housing with internal wave absorption stealth reconfiguration function - Google Patents
Antenna housing with internal wave absorption stealth reconfiguration function Download PDFInfo
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- CN118137134A CN118137134A CN202410155189.5A CN202410155189A CN118137134A CN 118137134 A CN118137134 A CN 118137134A CN 202410155189 A CN202410155189 A CN 202410155189A CN 118137134 A CN118137134 A CN 118137134A
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- 238000010521 absorption reaction Methods 0.000 title abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 154
- 238000003466 welding Methods 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 14
- 230000010287 polarization Effects 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 239000006096 absorbing agent Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 109
- 238000013461 design Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000005388 cross polarization Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002498 deadly effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
- H01Q1/422—Housings not intimately mechanically associated with radiating elements, e.g. radome comprising two or more layers of dielectric material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
The invention discloses an in-band wave-absorbing stealth reconfigurable radome, which comprises n multiplied by n super surface units which are periodically arranged, wherein each super surface unit comprises a first metal layer, a first dielectric layer, an air layer, a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer and a fourth metal layer which are sequentially laminated from top to bottom, the first metal layer is printed on the surface of the first dielectric layer, the second metal layer is printed on the surface of the second dielectric layer, the second dielectric layer is in close contact with the third metal layer, the third metal layer is printed on the surface of the third dielectric layer, the fourth metal layer is printed on the bottom surface of the third dielectric layer, and active devices are loaded on the first metal layer and the second metal layer. The method realizes the mutual switching of the stealth radome with intermediate frequency wave transmission and high-low frequency wave absorption and the broadband wave absorber, and completes the problem of stealth of the radome with in-band wave absorption.
Description
Technical Field
The invention relates to the technical field of novel artificial electromagnetic metamaterial, in particular to an antenna housing with an internal wave-absorbing stealth reconfigurable function.
Background
Radar technology is widely used in civil fields (such as meteorological monitoring, geological detection, modern communication, seawater monitoring, etc.) as a detection means due to the outstanding characteristics of strong penetrating power and high precision in all days. Especially in modern informatization warfare, can effectively pose a deadly threat to weaponry and command platforms. To some extent, the trend toward combat plays a critical role.
In order to determine the scattering strength of the target, researchers have proposed the concept of radar cross section (Radar Cross Section, RCS), denoted by the symbol σ. That is, when a plane wave irradiates a target, a physical quantity of echo intensity generated in a certain direction is a virtual cross-sectional area. The stealth performance of the target is related to the radar maximum detection distance. In free space, the radar distance equation shows that the detection distance is in direct proportion to the 4 th-order root of the RCS value of the target. The smaller the RCS value of the target is, the shorter the detection distance of the radar is, namely, the weaker the echo power detected by the radar is, and the better the stealth performance of the target is. When the target RCS value is reduced by 12dB, the maximum detection range of the radar will be reduced by 50%. Therefore, in order to improve the survival, combat, and outburst prevention capability of the target in the battlefield, reducing the RCS of the target is an important measure for improving the radar stealth capability of the target.
The stealth radome is an artificial periodic structure with inner transparent wave band and outer stealth, and the bottom structure of the radome is a band-pass type frequency selective surface for generating a transparent window; the loss layer is cascaded on the basis of the band-pass frequency selection surface, and electromagnetic waves outside the band can be absorbed on the premise of not affecting the transmission efficiency, so that the double-station or single-station RCS on two sides of the pass band is reduced, and the purpose of hiding the band is achieved. The conventional stealth radome can generally realize the stealth effect of an out-of-band frequency band, but few researches on in-band wave absorption stealth are reported. When the radome is in a working state, the wave-transmitting window is required to radiate antenna signals, and when the radome is in a non-working state, the wave-transmitting window still exists, so that the enemy radar can detect the position of the other party through electromagnetic signals reflected by the wave-transmitting window, and the threat is brought to platforms such as aircrafts.
Therefore, in order to enable the radome to have a stealth function in a non-working state, the invention provides a novel design of the radome capable of reconstructing in-band wave-absorbing stealth by controlling the opening and closing of the wave-transmitting window through active devices such as PIN diodes based on a frequency selective surface structure so as to realize the in-band wave-absorbing stealth function.
Disclosure of Invention
The invention aims to solve the technical problem that the conventional stealth radome does not have stealth capability in a passband window, and provides an in-band wave-absorbing stealth reconfigurable radome based on a frequency selective surface design.
In order to achieve the above purpose, the invention adopts the following technical scheme:
The utility model provides a take interior wave-absorbing stealthy reconfigurable radome which characterized in that: each super surface unit comprises a first metal layer, a first medium layer, an air layer, a second metal layer, a second medium layer, a third metal layer, a third medium layer and a fourth metal layer which are sequentially stacked from top to bottom, wherein the first metal layer is printed on the surface of the first medium layer, the second metal layer is printed on the surface of the second medium layer, the second medium layer is closely contacted with the third metal layer, the third metal layer is printed on the surface of the third medium layer, the fourth metal layer is printed on the bottom surface of the third medium layer, active devices are loaded on the first metal layer and the second metal layer, the first metal layer and the first medium layer form an interdigital active loss resonant structure, and the second metal layer, the second medium layer, the third metal layer, the third medium layer and the fourth metal layer form an active frequency selective surface layer.
Further, the first metal layer includes two first metal strips that the level set up, all is connected with the welding portion at the inboard edge of two first metal strips, welds on the welding portion has the resistance, is connected with vertical branch in the inboard of welding portion, passes through between the vertical branch of both sides active device electricity is connected, still is connected with horizontal branch in other both sides of welding portion, all is connected with a plurality of interdigital structures in the inboard of the horizontal branch of both sides, forms electric capacity between the adjacent two interdigital structures of both sides.
Further, the interdigital structure comprises a second metal strip connected with the transverse branch, and the interdigital structures on two sides form the capacitor at the inner end of the second metal strip.
Further, a plurality of third metal strips are arranged on two sides of the second metal strip side by side, and the inner ends of the third metal strips are connected with the inner ends of the second metal strips.
Further, the transverse branch comprises a fourth metal strip connected with the welding part, a plurality of fifth metal strips are connected to the transverse metal strip through connecting blocks, the fifth metal strips are arranged in parallel with the fourth metal strips, and the fifth metal strips are distributed on two sides of the vertical branch.
Further, the width of the middle part of the vertical branch is larger than the width of the two sides of the vertical branch.
Further, a horizontal first strip-shaped groove is formed in the middle of the second metal layer, the first strip-shaped groove divides the second metal layer into an upper half body and a lower half body, and the upper half body and the lower half body of the second metal layer are electrically connected through the active device.
Further, a second bar-shaped groove inclined by 45 degrees is formed on the third metal layer.
Further, a third stripe groove parallel to the TE polarization direction is formed on the fourth metal layer.
Further, the piece thickness of the super surface unit is 17.0mm, and the period is 7.0mm; the dielectric constants of the first dielectric layer, the second dielectric layer and the third dielectric layer are 2.2, and the thicknesses of the first dielectric layer, the second dielectric layer and the third dielectric layer are respectively 0.5mm, 1.75mm and 1.75mm; the thickness of the air layer was 13.0mm.
According to the invention, the PIN diode is loaded in the reconfigurable super-surface structure, and the off and on states of the PIN diode are utilized, so that the lower frequency selective surface structure shows the characteristics of the cross polarization band-pass frequency selective surface and the total reflection metal floor, namely, the mutual switching of the stealth radome with medium-frequency wave transmission and high-frequency wave absorption and the broadband wave absorber is realized, and the problem of the stealth radome with in-band wave absorption is completed.
The invention has the remarkable effects that:
2. The first metal layer is an 'interdigital' type active loss resonant structure etched on the F4BM220 substrate, the structure has ultra-wideband wave absorption capacity, meanwhile, the 'interdigital' type structure is simple in design, and the wave-transmitting frequency band can be controlled by controlling the branch length of the 'interdigital'.
3. According to the invention, the PIN diode is loaded in the frequency selective surface structure of the lower part, and the off and on states of the PIN diode are utilized, so that the frequency selective surface structure shows the characteristics of the cross polarization band-pass frequency selective surface and the total reflection metal floor, namely, the mutual switching of the invisible radome with medium-frequency wave transmission and high-frequency wave absorption and the broadband wave absorber is realized, and the problem of the in-band wave absorption and stealth of the radome is completed.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic structural view of a subsurface unit;
FIG. 3 is a schematic diagram of a first metal layer and a first dielectric layer;
FIG. 4 is a schematic structural view of a second metal layer;
FIG. 5 is a schematic structural view of a third metal layer;
FIG. 6 is a schematic structural diagram of a fourth metal layer;
FIG. 7 is an electromagnetic graph of the present invention in radome mode;
fig. 8 is an electromagnetic graph of the present invention in a absorber mode.
Detailed Description
The following describes the embodiments and working principles of the present invention in further detail with reference to the drawings.
As shown in fig. 1 and 2, the radome with inner wave-absorbing stealth and reconfiguration comprises n×n super surface units 10 which are periodically arranged, n is any positive integer, each super surface unit 10 is composed of an upper part and a lower part, the upper part and the lower part are connected into a whole through a plastic column 20, and an air layer 3 is formed between the upper part and the lower part, wherein the upper part comprises a first metal layer 1 and a first medium layer 2 which are sequentially laminated from top to bottom, the first metal layer 1 is printed on the surface of the first medium layer 2, the lower part comprises a second metal layer 4, a second medium layer 5, a third metal layer 6, a third medium layer 7 and a fourth metal layer 8 which are sequentially laminated from top to bottom, the air layer 3 is formed between the first medium layer 2 and the second metal layer 3, the second metal layer 4 is printed on the surface of the second dielectric layer 5, the second dielectric layer 5 is in close contact with the third metal layer 6, the third metal layer 6 is printed on the surface of the third dielectric layer 7, the fourth metal layer 8 is printed on the bottom surface of the third dielectric layer 7, the first metal layer 1 and the second metal layer 4 are both loaded with an active device 9, the active device 9 is a PIN diode, the first metal layer 1 and the first dielectric layer 2 form an interdigital-like active loss resonant structure, the branch length and the trunk length of the interdigital active loss resonant structure directly influence the resonance frequency point of a wave-transmitting frequency band, and parallel metal wires in the active loss resonant structure are favorable for prolonging a current path, realizing a low-high frequency wave-absorbing effect and simultaneously not influencing the wave-transmitting frequency band; the second metal layer 4, the second dielectric layer 5, the third metal layer 6, the third dielectric layer 7 and the fourth metal layer 8 form an active frequency selective surface layer.
In this embodiment, the period of the super-surface unit 10 is 7mm, the thickness of the first dielectric layer 2 is 0.5mm, the thinner the dielectric layer is, the smaller the loss of electromagnetic waves is, the thicknesses of the second dielectric layer 5 and the third dielectric layer 7 are 1.75mm, and the dielectric substrate is supported by the plastic column 20 according to the design scheme. The first metal layer 1 is an interdigital active loss resonant structure etched on the first dielectric layer 2, when electromagnetic waves are incident on the lossy structure in parallel to TE polarized waves, the electromagnetic waves can be absorbed, and meanwhile, the broadband absorption effect can be realized through the design of the interdigital structure. The active device PIN diode is loaded in a horizontal strip-shaped groove of the second metal layer 4, when the PIN diode is in an off state, the circuit is a series LC circuit, the resonance circuit of the second metal layer 4 is a capacitor C under the incidence of TE polarized waves, after cascade connection, the series LC is connected with the capacitor C in parallel to form a wave-transmitting window, after cascade connection with the upper part, the electromagnetic response of medium-frequency wave-transmitting and high-frequency wave-absorbing is generated, and the wave-transmitting window corresponds to the radome mode of the designed structure.
That is, in this embodiment, the active device 9, that is, the PIN diode, is loaded in the band-pass frequency selective structure, so that the reconfigurable characteristic of the stealth radome is realized according to different working states of the PIN diode, and the following details are: when the PIN diode in the second metal layer 4 is in a disconnected state, the lower part structure is a cross polarization band-pass frequency selective surface, and after being cascaded with the upper part, the electromagnetic response of medium-frequency wave transmission and high-frequency wave absorption is generated, and the electromagnetic response corresponds to the radome mode of the designed structure; when the PIN diode is in a conducting state, the lower part structure is similar to a metal floor, has a total reflection characteristic, is used as a reflection floor of the upper part active loss resonance structure, generates ultra-wideband wave absorption bandwidth, covers a frequency band of a wave transmission band, and achieves the purpose of in-band wave absorption stealth.
In this embodiment, the feeding of the active PIN diode device is a difficult point of the present invention due to the loading of the active PIN diode used in both the upper and lower portions of the super surface unit 10, and therefore, a coplanar feeding mode is adopted.
The specific structure is as follows:
As shown in fig. 3, the first metal layer 1 includes two first metal strips 11 horizontally disposed and separately disposed on the upper and lower sides of the first dielectric layer 2, the edges of the inner sides of the two first metal strips 11 are connected with welding portions 12, the middle portions of the two welding portions 12 are welded with resistors 13, the inner sides of the two welding portions 12 are connected with a vertical branch 15, the two vertical branches 15 are electrically connected with each other through the active device 9, the left and right sides of the welding portions 12 are connected with transverse branches 14, the inner sides of the two transverse branches 14 are also respectively connected with a plurality of interdigital structures 16, the interdigital structures 16 on the upper and lower sides are oppositely disposed, and a capacitor 17 is formed between the two interdigital structures 16 adjacent to each other on the upper and lower sides.
Further, the interdigital structure 16 includes a second metal strip 161 connected to the lateral branch 14, the interdigital structure 16 on two sides forms the capacitor 17 at the inner end of the second metal strip 161, two third metal strips 162 are disposed side by side on two sides of the second metal strip 161, and the inner ends of the third metal strips 162 are connected to the inner ends of the second metal strips 161.
Further, the transverse branch 14 includes a fourth metal strip 141 connected to the welding portion 12, a fifth metal strip 142 is connected to the fourth metal strip 141 through a connecting block 143, the fifth metal strip 142 is parallel to the fourth metal strip 141, the fifth metal strip 142 is distributed on two sides of the vertical branch 15, and the connecting block 143 is vertically linked with the connecting block 143 and the fifth metal strip 142.
In this example, the width of the middle part of the vertical branch 15 is greater than the width of both sides thereof.
In this embodiment, the width of the first metal strip is preferably 0.1mm; the width of the welding part 12 is 1.0mm, and the length is 0.9mm; the width of the second metal strips 161 is 0.1mm, and the space between the upper and lower second metal strips 161, that is, the width of the capacitor 17 is 0.5mm; the length of the third metal strip 162 is 4.7mm; the length of the fourth metal strip 141 is 1.3mm; the length of the fifth metal strip 142 is 1.2mm; the width of the middle part of the vertical branch 15 is 0.6mm.
Based on the specific structure of the first metal layer 1, through the arrangement of the upper and lower first metal strips 11, an RLC circuit can be formed with the resistor 13 and the vertical branch 15 as a part of a feed network, and the RLC circuit can feed the PIN diode corresponding to the wave-absorbing frequency band; the second method can adjust the size of the capacitor C in the RLC circuit according to the length of the first metal strip 11, when the first metal strip 11 is longer, the area of the capacitor C is larger, the resonance frequency point corresponding to the larger capacitor C moves toward lower frequency, which means that the bandwidth of the low frequency, that is, the bandwidth of the absorption band, is expanded toward lower frequency, that is, the bandwidth of the absorption band is expanded. In addition, the vertical branch 15 is used as a main metal strip, and a PIN diode is connected to the middle part of the vertical branch, and has an on state and an off state, so that the PIN diode is matched with the second metal layer 4 loaded with the PIN diode to realize in-band wave absorption stealth. The resistor 13 on the welded portion 12 functions to absorb the reflected and transmitted electromagnetic wave by its ohmic loss as an effect. Finally, the branches located at two sides of the trunk, namely the vertical branches 15, namely the interdigital structures 16, two adjacent interdigital structures 16 with the same structure form a direct current blocking capacitor, the second metal strip 161 forms an inductance L, so that an LC parallel equivalent circuit is formed, and then the interdigital structures 16 with the same structural size are beneficial to expanding the passband. Considering the size of this period, i.e. one bandwidth of the passband window, the number of the interdigital structures 16 is four, but can be six or eight.
As shown in fig. 4, a first horizontal stripe-shaped groove 41 is disposed in the middle of the second metal layer 4, the first stripe-shaped groove 41 divides the second metal layer 4 into an upper half 42 and a lower half 43, the upper half 42 and the lower half 43 of the second metal layer 4 are electrically connected through the active device 9, and the width of the first stripe-shaped groove 41 is 1.5mm.
Preferably, the upper half 42 and the lower half 43 of the second metal layer 4 extend into the first stripe-shaped groove 41 to form a connecting lug 44, and the active device 9 is electrically connected between the connecting lugs 44 on the upper and lower sides.
The active device PIN diode 9 is loaded in a first bar-shaped groove 41 horizontally arranged on the second metal layer 4, when the PIN diode is in an off state, the circuit is a series LC circuit, the resonance circuit of the second metal layer 4 is a capacitor C under the incidence of TE polarized waves, after cascade connection, the series LC is connected with the capacitor C in parallel to form a wave-transmitting window, after cascade connection with the upper part, the electromagnetic response of medium-frequency wave-transmitting and high-frequency wave-absorbing is generated, and the wave-transmitting window corresponds to the radome mode of the designed structure.
As shown in fig. 5, the third metal layer 6 has a size corresponding to the surface of the third metal layer 7, and the third metal layer 6 has a second groove 61 inclined at 45 °. The third metal layer 6 has a metal structure with 45-degree square grooves for polarization conversion of electromagnetic waves to form cross polarization wave-transparent characteristics, the second bar-shaped grooves 61 are square grooves, and the length of the second bar-shaped grooves 61 is 37.8mm.
As shown in fig. 6, the size of the fourth metal layer 8 is consistent with the bottom surface of the third dielectric layer 7, a third bar-shaped groove 81 parallel to the TE polarization direction is formed in the middle of the fourth metal layer, the third bar-shaped groove 81 divides the fourth metal layer 8 into left and right parts, and the width of the third bar-shaped groove 81 is 0.5mm.
The fourth metal layer 8 has a metal structure with vertical grooves, and the circuit is an inductance L circuit (TE polarized wave-transparent, inductance C circuit (TM polarized wave-transparent)). The feed network of the PIN diode is used as a design part of the whole unit structure, so that the addition of an extra feed structure is avoided, and unnecessary interference is generated.
In this embodiment, the piece thickness of the super surface unit 10 is 17.0mm, with a period of 7.0mm; the dielectric constants of the first dielectric layer 2, the second dielectric layer 5 and the third dielectric layer 7 are 2.2, and the thicknesses are respectively 0.5mm, 1.75mm and 1.75mm; the thickness of the air layer 3 is 13.0mm.
It should be noted that the interdigital active loss resonant structure portion in the present invention is not limited to this, and the slit structure of the PIN diode loaded at the lower portion is not limited to the bar-shaped groove. The selection of the upper and lower medium substrates is not necessary to adopt F4B plates, so long as the material has small electric loss, and the relative dielectric constant and thickness meet the resonance requirement.
As can be seen from the accompanying drawings 7 and 8, the invention uses the off and on states of the PIN diode in the reconfigurable super-surface structure by loading the PIN diode, so that the lower frequency selective surface structure shows the characteristics of the cross polarization band-pass frequency selective surface and the total reflection metal floor, namely, the mutual switching of the stealth radome with medium frequency wave transmission and high and low frequency wave absorption and the broadband absorber is realized, and the problem of wave absorption stealth in the radome is completed.
The technical scheme provided by the invention is described in detail. The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the method of the present invention and its core ideas. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the invention can be made without departing from the principles of the invention and these modifications and adaptations are intended to be within the scope of the invention as defined in the following claims.
Claims (10)
1. The utility model provides a take stealthy reconfigurable radome of wave-absorbing, its characterized in that: including the n x n super surface unit (10) of periodic arrangement, every super surface unit (10) all include from the top down range upon range of first metal layer (1), first dielectric layer (2), air bed (3), second metal layer (4), second dielectric layer (5), third metal layer (6), third dielectric layer (7) and fourth metal layer (8) that set up in proper order, first metal layer (1) print be in the surface of first dielectric layer (2), second metal layer (4) print at the surface of second dielectric layer (5), second dielectric layer (5) and third metal layer (6) in close contact, third metal layer (6) print at the surface of third dielectric layer (7), fourth metal layer (8) print in the bottom surface of third dielectric layer (7), first metal layer (1) and second metal layer (4) all are loaded with active device (9), first metal layer (1) and first dielectric layer (2) form type resonant layer (7), second metal layer (6) active layer (8), active layer (8) and fourth dielectric layer (5).
2. The in-band wave-absorbing stealth reconfigurable radome of claim 1, wherein: the first metal layer (1) comprises two first metal strips (11) which are horizontally arranged, the inner side edges of the two first metal strips (11) are connected with welding parts (12), resistors (13) are welded on the welding parts (12), vertical branches (15) are connected to the inner sides of the welding parts (12), the two vertical branches (15) are electrically connected through the active devices (9), transverse branches (14) are further connected to the other two sides of the welding parts (12), a plurality of interdigital structures (16) are connected to the inner sides of the transverse branches (14) on the two sides, and a capacitor (17) is formed between the two adjacent interdigital structures (16) on the two sides.
3. The in-band wave-absorbing stealth reconfigurable radome of claim 2, wherein: the interdigital structure (16) comprises a second metal strip (161) connected with the transverse branch (14), and the interdigital structures (16) on two sides form the capacitor (17) at the inner end of the second metal strip (161).
4. An in-band wave-absorbing stealth reconfigurable radome of claim 3, wherein: a plurality of third metal strips (162) are arranged on two sides of the second metal strip (161) side by side, and the inner ends of the third metal strips (162) are connected with the inner ends of the second metal strips (161).
5. The in-band wave-absorbing stealth reconfigurable radome of claim 2, wherein: the transverse branch (14) comprises a fourth metal strip (141) connected with the welding part (12), a plurality of fifth metal strips (142) are connected to the fourth metal strip (141) through connecting blocks (143), the fifth metal strips (142) are arranged in parallel with the fourth metal strip (141), and the fifth metal strips (142) are distributed on two sides of the vertical branch (15).
6. The in-band absorptive stealth reconfigurable radome of claim 5, wherein: the width of the middle part of the vertical branch (15) is larger than the width of the two sides of the vertical branch.
7. The in-band wave-absorbing stealth reconfigurable radome of claim 1, wherein: the middle part of the second metal layer (4) is provided with a horizontal first strip-shaped groove (41), the first strip-shaped groove (41) divides the second metal layer (4) into an upper half body (42) and a lower half body (43), and the upper half body (42) and the lower half body (43) of the second metal layer (4) are electrically connected through the active device (9).
8. The in-band wave-absorbing stealth reconfigurable radome of claim 1, wherein: the third metal layer (6) is provided with a second strip-shaped groove (61) inclined by 45 degrees.
9. The in-band wave-absorbing stealth reconfigurable radome of claim 1, wherein: a third groove (81) parallel to the TE polarization direction is formed in the fourth metal layer (8).
10. The in-band wave-absorbing stealth reconfigurable radome of any one of claims 1-9, wherein: the piece thickness of the super surface unit (10) is 17.0mm, and the period is 7.0mm; the dielectric constants of the first dielectric layer (2), the second dielectric layer (5) and the third dielectric layer (7) are 2.2, and the thicknesses of the first dielectric layer, the second dielectric layer and the third dielectric layer are respectively 0.5mm, 1.75mm and 1.75mm; the thickness of the air layer (3) is 13.0mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410155189.5A CN118137134A (en) | 2024-02-04 | 2024-02-04 | Antenna housing with internal wave absorption stealth reconfiguration function |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410155189.5A CN118137134A (en) | 2024-02-04 | 2024-02-04 | Antenna housing with internal wave absorption stealth reconfiguration function |
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| Publication Number | Publication Date |
|---|---|
| CN118137134A true CN118137134A (en) | 2024-06-04 |
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| CN202410155189.5A Pending CN118137134A (en) | 2024-02-04 | 2024-02-04 | Antenna housing with internal wave absorption stealth reconfiguration function |
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2024
- 2024-02-04 CN CN202410155189.5A patent/CN118137134A/en active Pending
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