CN110729532A - Dual polarization absorbing/transmitting frequency selection structure based on wave absorbing silicon rubber - Google Patents
Dual polarization absorbing/transmitting frequency selection structure based on wave absorbing silicon rubber Download PDFInfo
- Publication number
- CN110729532A CN110729532A CN201910823508.4A CN201910823508A CN110729532A CN 110729532 A CN110729532 A CN 110729532A CN 201910823508 A CN201910823508 A CN 201910823508A CN 110729532 A CN110729532 A CN 110729532A
- Authority
- CN
- China
- Prior art keywords
- wave
- absorbing
- silicon rubber
- wave absorbing
- silicone rubber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention relates to a dual-polarized wave absorbing/wave transmitting type frequency selection structure of wave absorbing silicon rubber. At present, the wave absorbing function of various wave absorbing/wave transmitting frequency selection structures is realized by constructing different lossy resonators. But the bandwidth of lossy resonators is relatively limited. Although broadband absorption can be achieved by stacking a plurality of resonators with adjacent absorption bands in a periodic unit, this makes the structure too complex. The invention adopts the wave-absorbing silicone rubber with broadband wave-absorbing property and very thin thickness to realize broadband wave-absorbing. A ring-shaped gap is dug in the wave-absorbing silicon rubber, a metal film is placed on the inner wall of the wave-absorbing silicon rubber to construct a pass band, and meanwhile, a cross-shaped metal sheet is added above the wave-absorbing silicon rubber to improve the impedance matching between the wave-absorbing silicon rubber and air. The ATFSS realizes the combination of excellent performance and simple structure.
Description
Technical Field
The invention belongs to the technical field of microwaves, and relates to a dual-polarization absorbing/transmitting frequency selection structure based on wave-absorbing silicon rubber, which can be used as an antenna housing and used for reducing the Radar scattering Cross Section (RCS) of an antenna.
Background
In the practical application of the antenna, the antenna cover is often used for protecting the antenna and the antenna system thereof from being interfered and influenced by the external environment, so that the performance of the antenna is more stable, and the corrosion can be reduced, the aging can be delayed, and the service life of the antenna system can be prolonged. In recent years, with the increasing demands for stealth performance of military operation platforms, radomes with reduced RCS functions have become a hot spot for research.
It is a current scheme to reduce RCS by using a Frequency selective surface/structure (FSS) as a radome. FSS, as a spatial filter, cannot absorb electromagnetic waves by itself, but has frequency selective characteristics for electromagnetic waves of different operating frequencies, polarization states, and incident angles. When used as a radome, it reduces RCS by deflecting reflected waves of the radar from the incident direction through a change in shape. However, only a single station (monostatic) RCS is so reduced, and reflected waves may still be detected by a dual station (bistatic) or multi station (multistatic) radar system. In order to solve this problem, a novel frequency selective structure, a wave absorbing/transmitting type frequency selective structure (ATFSS), has been proposed in recent years. The frequency selective structure is a novel frequency selective structure capable of realizing in-band transmission and out-of-band absorption. Compared with FSS, ATFSS replaces reflection of out-of-band incident waves for absorption, so that single-station and multi-station RCS can be effectively reduced.
Many ATFSS reported so far have wave absorbing function realized by constructing different lossy resonators. Generally, lossy resonators have a relatively limited bandwidth. Although broadband wave absorption can be realized by superposing a plurality of resonators with adjacent wave absorption frequency bands in one period unit, the structure is too complex, the processing difficulty and cost are greatly increased, and the reliability of the structure is reduced. In general, ATFSS based on lossy resonators has difficulty in realizing broadband wave absorption with a simple structure and a thin thickness. Furthermore, the lossy resonator requires the use of a large number of resistors, which further increases the manufacturing cost and also reduces reliability. In order to solve the problems, the invention provides a scheme of combining a three-dimensional frequency selective structure with wave-absorbing silicon rubber. According to the scheme, broadband wave absorption is realized by using the wave-absorbing silicone rubber with broadband wave-absorbing characteristics and very thin thickness, and meanwhile, the cross-shaped metal sheet is added above the wave-absorbing silicone rubber to improve the impedance matching between the wave-absorbing silicone rubber and air. On the other hand, a three-dimensional band-pass frequency selection structure is constructed by digging an annular gap in the wave-absorbing silicon rubber and placing a metal film on the inner wall, so that a pass band is realized. The ATFSS based on the wave-absorbing silicon rubber provided by the invention is provided with a passband and two wave-absorbing bands positioned at two sides of the passband. The structure is simple, any lumped component is not needed, welding is not needed, and the processing cost is low. The ATFSS realizes the combination of excellent performance and simple structure.
Disclosure of Invention
The invention provides a design scheme of a dual-polarized ATFSS based on wave-absorbing silicon rubber, aiming at the problems that the conventional ATFSS based on a lossy resonator is difficult to consider smaller thickness and broadband wave-absorbing, has a complex structure, is high in processing cost and the like. The scheme fully utilizes the broadband wave-absorbing property of the wave-absorbing silicon rubber to realize the wave-absorbing function of the ATFSS, and simultaneously utilizes the property that the wave-absorbing silicon rubber has low loss (equivalent to a low-loss medium) in another frequency band higher than the wave-absorbing band to be embedded into the annular metal gap to generate the wave-transmitting function of the ATFSS. The wave-absorbing material is integrated into the ATFSS design, the wave-absorbing property of the wave-absorbing material is fully utilized, and the design flexibility is high. The wave-absorbing material can be selected not only from the wave-absorbing silicon rubber adopted in the invention, but also any wave-absorbing material which can absorb waves in some frequency bands and has low loss (does not absorb waves) in other frequency bands can be used. The ATFSS provided by the invention has the advantages of broadband wave absorption, thin thickness, simple structure, high design flexibility, low processing cost and the like.
In order to achieve the above purpose, the technical scheme of the invention is realized as follows:
the ATFSS based on the wave-absorbing silicon rubber is a periodic structure, and each structural unit is seamlessly arranged along the x axis and the y axis. Each periodic structure unit comprises a wave-transmitting channel and a wave-absorbing structure, and specifically comprises a first metal sheet, wave-absorbing silicon rubber and a second metal surface which are sequentially arranged from top to bottom; an air layer with a certain distance is reserved between the first metal sheet and the wave-absorbing silicon rubber, and a second metal surface is arranged on the lower surface of the wave-absorbing silicon rubber;
the wave-absorbing silicon rubber is provided with an annular gap, the lower ends of two inner side walls of the gap are provided with a third metal surface and a fourth metal surface, and the metal surfaces are not arranged from the upper ends of the third metal surface and the fourth metal surface to the upper ends of the two inner side walls of the gap;
the wave-transmitting channel consists of an annular gap embedded in the wave-absorbing silicon rubber and third and fourth metal surfaces on two sides of the inner wall of the gap;
the wave-absorbing structure consists of a first metal sheet, wave-absorbing silicon rubber and a second metal surface.
The centers of the first metal sheet, the wave-absorbing silicon rubber, the second metal surface and the annular gap are positioned on the same straight line.
The air layer between the first metal sheet and the wave-absorbing silicon rubber is equivalent to a section of lossless transmission line, and the first metal sheet effectively adjust the input impedance of a wave-absorbing frequency band and are of great importance for improving the wave-absorbing performance of the ATFSS. The length of the air layer along the z-axis is approximately 0.08 wavelengths of the center frequency of the absorption band, which in this example is 3.3 mm.
Preferably, the type and thickness of the wave-absorbing silicone rubber can be selected according to the requirements of specific pass band and wave-absorbing band indexes. The thickness of the wave-absorbing silicon rubber adopted in the example is 3.2mm, and the reflectivity (| S) in the wave-absorbing band (2.78GHz to 11.40GHz) is11|) lower than-10 dB, and the reflectivity in the reflection band (13.1GHz to 16.4GHz) higher than-1 dB. The reflection band of the wave-absorbing silicon rubber must cover the pass band required by the index.
Preferably, the shape and size of the first metal sheet above the wave-absorbing silicon rubber can be selected according to the performance requirement of the actual wave-absorbing band, and the wave-absorbing silicon rubber can be in a cross shape. The cross can be viewed as a combination of two rectangles rotated 90 degrees from each other. The long side and the wide side of the rectangle are respectively 6mm and 2.5mm, and respectively about 0.14 times and 0.06 times of the wave-absorbing band center frequency.
Preferably, the annular gap embedded in the wave-absorbing silicone rubber can be selected according to the frequency band of the actual passband, and the circumference of the annular gap can be 23.6mm and is approximately equal to the wavelength of the center frequency of the passband. The gap width was 0.6mm, which was determined by scanning the simulation software parameters to the optimum value.
Preferably, the height of the metal embedded on the two sides of the inner wall of the annular gap in the wave-absorbing silicone rubber can be selected according to the actual wave-transmitting band, and can be 1.5mm, which is about 0.07 times of the wavelength of the center frequency of the pass band. The distance from the upper ends of the third and fourth metal surfaces to the upper ends of the two inner side walls of the gap is 1.7mm, namely, no metal surface part is arranged.
Preferably, the side length of the periodic structure elements can be selected according to actual conditions, and can be 11mm, which is about 1/4 times the wavelength of the central frequency of the wave-absorbing band.
The specific working principle is as follows: the ATFSS has wave-transmitting and wave-absorbing properties for electromagnetic waves of a pass band and a wave-absorbing band respectively. Since the wave-absorbing silicon rubber hardly absorbs (similar to a low-loss medium) in the frequency band of 13.1 GHz-16.4 GHz, incident electromagnetic waves can just pass through the annular gap. The annular slot can be regarded as a three-dimensional expansion of a two-dimensional band-pass frequency selective surface, the band-pass frequency of which is still determined by the perimeter of the slot, i.e. the perimeter is approximately equal to lambdapWherein λ ispIs the wavelength in vacuum corresponding to the center frequency of the passband. In the absorption frequency band, because the frequency is far away from the pass band, the electromagnetic wave cannot penetrate through the wave-absorbing silicon rubber annular gap, and the incident electromagnetic wave can be absorbed by the wave-absorbing silicon rubber. However, the annular gap can cause the reduction of the wave absorption performance, so that the air between the cross-shaped metal sheet above the wave-absorbing silicon rubber and the wave-absorbing silicon rubber can be equivalent to a section of lossless transmission line, the input impedance of the wave-absorbing silicon rubber is effectively adjusted, the impedance matching is improved, and the wave absorption rate is improved.
The band-pass type broadband frequency selection structure has the following advantages:
(1) the dual-polarization ATFSS transmits at high frequency, and incident electromagnetic waves can almost pass through without loss; at low frequency, the incident electromagnetic wave is almost completely absorbed. And due to the rotationally symmetric nature of its structure, the ATFSS is dual polarized.
(2) The dual-polarization ATFSS breaks away from the traditional two-dimensional plane stacking, adopts a three-dimensional structure, realizes the low and high-frequency absorption characteristics, has small insertion loss of a pass band, and realizes the absorption band at the adjacent intermediate frequency.
(3) The dual-polarization ATFSS makes full use of the wave-absorbing characteristics of the wave-absorbing material, has high design flexibility, and can select different wave-absorbing materials according to the requirements of actual indexes.
Drawings
FIG. 1 is a three-dimensional schematic of the cell structure of the present invention;
FIG. 2 is a side view of the cell structure of the present invention;
FIG. 3 is a top view of the cell structure of the present invention;
FIG. 4 is a graph of the reflection and transmission coefficients of the cell structure of the present invention at normal incidence of an electromagnetic wave;
FIG. 5 is the wave absorption rate of the cell structure of the present invention at normal incidence of electromagnetic waves;
FIG. 6 is a graph showing the reflection and transmission coefficients of the cell structure of the present invention at oblique incidence of electromagnetic waves; (a) and (b) TE and TM polarized waves, respectively.
Detailed Description
The present invention is further analyzed with reference to the following specific examples.
As shown in fig. 1, fig. 2 and fig. 3, the dual-polarized ATFSS based on the wave-absorbing silicone rubber of the present invention is a periodic structure, and each periodic unit structure includes a wave-transparent channel and a wave-absorbing structure. The wave-absorbing silicone rubber comprises a first metal sheet 1, wave-absorbing silicone rubber 2 and a second metal surface 5 which are sequentially arranged from top to bottom; an air layer with a certain distance is reserved between the first metal sheet 1 and the wave-absorbing silicon rubber, and a second metal surface is arranged on the lower surface of the wave-absorbing silicon rubber;
the wave-absorbing silicon rubber 2 is provided with a square annular gap to form a Chinese character hui structure;
the lower ends of two inner side walls of the square annular gap are provided with a third metal surface 3 and a fourth metal surface 4, and no metal surface is arranged from the upper ends of the third metal surface and the fourth metal surface to the upper ends of the two inner side walls of the gap;
the wave-transmitting channel consists of an annular gap embedded in the wave-absorbing silicon rubber and third and fourth metal surfaces on two sides of the inner wall of the gap;
the wave-absorbing structure consists of a first metal sheet, wave-absorbing silicon rubber and a second metal surface. The first metal sheet 1 serves as an electromagnetic wave incident surface.
The side length of the square annular gap is 5.9 mm, the width of the square annular gap is 0.6mm, the depth of the gap is 3.2mm, the side length of the metal surface 3 of the inner wall of the slot is 4.7 mm, the side length of the metal surface 4 is 5.9 mm, and the heights of the metal surface 3 and the metal surface 4 are 1.5 mm. The wave-absorbing structure comprises a metal sheet 1, a wave-absorbing silicon rubber wave-absorbing material 2 and a metal surface 5 on the lower surface of the wave-absorbing silicon rubber wave-absorbing material, wherein the side length of the metal sheet 1 is 6mm, the width of the metal sheet is 2.5mm, and the thickness of the metal sheet is 0.1 mm; the side length of the wave-absorbing silicon rubber 2 is 11mm, the side length of a square at the center of the wave-absorbing silicon rubber 2 is 4.7 mm, the thickness of the wave-absorbing silicon rubber 2 is 3.2mm, and the distance between the metal sheet 1 and the upper surface of the wave-absorbing silicon rubber is 3.3 mm.
The specific structural geometric parameters are as follows:
wherein l is the length of the unit structure, w is the width of the unit structure, h is the height of the unit structure, laIs the length, w, of the metal sheet 1cIs the width, h, of the metal sheet 1s1To absorb the thickness h of the silicone rubbers2Is the interval between the metal sheet 1 and the wave-absorbing silicon rubber haIs the height, w, of the metal surfaces 3, 4 embedded in the wave-absorbing silicone rubbersIs the width of a square annular gap, /)sIs the length of the inner wall of the annular metal seam.
Fig. 4, 5, and 6 show simulation results of the ATFSS. Fig. 4 shows the reflection and transmission coefficients. It can be seen that the structure has a passband (| S) from 13.6GHz to 14.5GHz21| ≧ 3dB), the passband insertion loss is 1.34 dB. Meanwhile, the low frequency is the absorption band (| S) from 3.85GHz to 10.39GHz11Less than or equal to-10 dB). Fig. 5 shows the change of the wave-absorbing rate with the frequency, and obviously, the wave-absorbing efficiency in the wave-absorbing band is as high as more than 90%, and the wave-absorbing effect is excellent. Fig. 6 shows the transmission and reflection coefficients at oblique incidence, and it can be seen that the ATFSS can still exhibit stable performance even when the incident angle of the electromagnetic wave reaches 30 °.
Claims (9)
1. The dual-polarization absorbing/transmitting frequency selection structure based on the wave-absorbing silicon rubber is a periodic structure, and each structural unit is arranged seamlessly along the x axis and the y axis; the wave absorbing structure is characterized in that each periodic structure unit comprises a band-pass channel and a wave absorbing structure, and specifically comprises a first metal sheet, wave absorbing silicon rubber and a second metal surface which are sequentially arranged from top to bottom; an air layer with a certain distance is reserved between the first metal sheet and the wave-absorbing silicon rubber, and a second metal surface is arranged on the lower surface of the wave-absorbing silicon rubber;
the wave-absorbing silicon rubber is provided with an annular gap, the lower ends of two inner side walls of the gap are provided with a third metal surface and a fourth metal surface, and the metal surfaces are not arranged from the upper ends of the third metal surface and the fourth metal surface to the upper ends of the two inner side walls of the gap;
the wave-transmitting channel consists of an annular gap embedded in the wave-absorbing silicon rubber and third and fourth metal surfaces on two sides of the inner wall of the gap;
the wave-absorbing structure consists of a first metal sheet, wave-absorbing silicon rubber and a second metal surface.
2. A dual polarization absorbing/transmitting frequency selective structure based on wave absorbing silicone rubber according to claim 1, characterized in that the length of the air layer along the z-axis is 0.08 times the wavelength of the central frequency of the wave absorbing band.
3. The dual-polarization wave absorbing/wave transmitting type frequency selection structure based on the wave absorbing silicone rubber as claimed in any one of claims 1 to 2, characterized in that the type and thickness of the wave absorbing silicone rubber are selected according to the requirements of specific pass band and wave absorbing band index: reflectivity (| S) in absorption band (2.78GHz to 11.40GHz)11|) lower than-10 dB, and the reflectivity in the reflection band (13.1GHz to 16.4GHz) higher than-1 dB.
4. A dual polarized wave absorbing/transmitting type frequency selective structure based on wave absorbing silicone rubber according to any of claims 1 to 3, characterized in that the first metal sheet is cross-shaped, has a length of 6mm, and has four end faces with a width of 2.5mm, which are respectively about 0.14 and 0.06 times the wavelength of the central frequency of the wave absorbing band.
5. The dual-polarization wave absorbing/wave transmitting type frequency selective structure based on wave absorbing silicone rubber according to any one of claims 1 to 4, wherein the perimeter of the annular gap embedded in the wave absorbing silicone rubber is the wavelength of the passband center frequency.
6. The dual-polarization wave absorbing/transmitting type frequency selective structure based on wave absorbing silicone rubber of any one of claims 1 to 5, wherein the heights of the third and fourth metal surfaces embedded at both sides of the inner wall of the annular slot in the wave absorbing silicone rubber are both 0.07 times of the wavelength of the center frequency of the pass band.
7. The dual-polarization wave absorbing/wave transmitting type frequency selective structure based on wave absorbing silicone rubber according to any one of claims 1 to 6, wherein the width of the annular gap embedded in the wave absorbing silicone rubber is 0.6 mm.
8. The dual-polarization wave absorbing/wave transmitting type frequency selective structure based on the wave absorbing silicone rubber of any one of claims 1 to 7, wherein the annular gap is a square with a side length of 5.9 mm and a width of 0.6mm, and the depth of the gap is the same as the height of the wave absorbing silicone rubber;
the side length of a third metal surface on the inner side wall of the annular gap along the y-axis direction is 4.7 mm, the side length of a fourth metal surface along the y-axis direction is 5.9 mm, and the heights of the third metal surface and the fourth metal surface are both 1.5 mm;
the first metal sheet is cross-shaped, the lengths of the x and y axial directions are both 6mm, the widths of four end surfaces are 2.5mm, and the thickness is 0.1 mm;
the side length of the wave-absorbing silicon rubber is 11mm, and the thickness of the wave-absorbing silicon rubber is 3.2 mm;
the height of the air layer was 3.3 mm.
9. The wave-absorbing silicone rubber-based dual-polarized wave-absorbing/wave-transparent frequency selective structure of any one of claims 1 to 8, for use as a radome.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910823508.4A CN110729532B (en) | 2019-09-02 | 2019-09-02 | Dual polarization absorbing/transmitting frequency selection structure based on wave absorbing silicon rubber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910823508.4A CN110729532B (en) | 2019-09-02 | 2019-09-02 | Dual polarization absorbing/transmitting frequency selection structure based on wave absorbing silicon rubber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110729532A true CN110729532A (en) | 2020-01-24 |
| CN110729532B CN110729532B (en) | 2020-12-22 |
Family
ID=69218833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910823508.4A Active CN110729532B (en) | 2019-09-02 | 2019-09-02 | Dual polarization absorbing/transmitting frequency selection structure based on wave absorbing silicon rubber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110729532B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112072220A (en) * | 2020-07-13 | 2020-12-11 | 宁波大学 | Absorptive broadband band-pass spatial filter |
| CN112909570A (en) * | 2021-02-06 | 2021-06-04 | 中北大学 | Three-dimensional broadband wave-absorbing metamaterial integrating multiple absorption mechanisms |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110210903A1 (en) * | 2010-02-26 | 2011-09-01 | The Regents Of The University Of Michigan | Frequency-selective surface (fss) structures |
| US20140255040A1 (en) * | 2013-03-08 | 2014-09-11 | Osaka University | Photonic-crystal slab absorber and high-frequency circuit and electronic components, and transmitter, receiver and proximity wireless communication system |
| WO2016121375A1 (en) * | 2015-01-26 | 2016-08-04 | 日本電気株式会社 | Frequency selective surface, wireless communication device and radar device |
| CN108376839A (en) * | 2018-04-28 | 2018-08-07 | 北京机械设备研究所 | A kind of Meta Materials and preparation method thereof micro-fluidic based on liquid metal |
| US20180294795A1 (en) * | 2017-04-10 | 2018-10-11 | Regents Of The University Of Minnesota | Metamaterial closed ring resonator |
| CN109411892A (en) * | 2018-09-07 | 2019-03-01 | 西安电子科技大学 | Double frequency-band inhales wave frequency rate selection surface system and design method, aircraft |
| CN109659702A (en) * | 2018-11-13 | 2019-04-19 | 华中科技大学 | A kind of novel adjustable Terahertz Meta Materials absorbent structure |
| CN110011008A (en) * | 2019-03-31 | 2019-07-12 | 华南理工大学 | A kind of Terahertz Broadband bandstop filter based on super surface |
| CN110148833A (en) * | 2019-05-13 | 2019-08-20 | 华东师范大学 | High-gain dual-frequency circular polarized antenna based on super surface |
-
2019
- 2019-09-02 CN CN201910823508.4A patent/CN110729532B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110210903A1 (en) * | 2010-02-26 | 2011-09-01 | The Regents Of The University Of Michigan | Frequency-selective surface (fss) structures |
| US20140255040A1 (en) * | 2013-03-08 | 2014-09-11 | Osaka University | Photonic-crystal slab absorber and high-frequency circuit and electronic components, and transmitter, receiver and proximity wireless communication system |
| WO2016121375A1 (en) * | 2015-01-26 | 2016-08-04 | 日本電気株式会社 | Frequency selective surface, wireless communication device and radar device |
| US20180294795A1 (en) * | 2017-04-10 | 2018-10-11 | Regents Of The University Of Minnesota | Metamaterial closed ring resonator |
| CN108376839A (en) * | 2018-04-28 | 2018-08-07 | 北京机械设备研究所 | A kind of Meta Materials and preparation method thereof micro-fluidic based on liquid metal |
| CN109411892A (en) * | 2018-09-07 | 2019-03-01 | 西安电子科技大学 | Double frequency-band inhales wave frequency rate selection surface system and design method, aircraft |
| CN109659702A (en) * | 2018-11-13 | 2019-04-19 | 华中科技大学 | A kind of novel adjustable Terahertz Meta Materials absorbent structure |
| CN110011008A (en) * | 2019-03-31 | 2019-07-12 | 华南理工大学 | A kind of Terahertz Broadband bandstop filter based on super surface |
| CN110148833A (en) * | 2019-05-13 | 2019-08-20 | 华东师范大学 | High-gain dual-frequency circular polarized antenna based on super surface |
Non-Patent Citations (1)
| Title |
|---|
| 徐帆帆: "基于人工电磁材料的吸波/透波频率选择表面", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112072220A (en) * | 2020-07-13 | 2020-12-11 | 宁波大学 | Absorptive broadband band-pass spatial filter |
| CN112909570A (en) * | 2021-02-06 | 2021-06-04 | 中北大学 | Three-dimensional broadband wave-absorbing metamaterial integrating multiple absorption mechanisms |
| CN112909570B (en) * | 2021-02-06 | 2022-06-28 | 中北大学 | Three-dimensional broadband wave-absorbing metamaterial integrating multiple absorption mechanisms |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110729532B (en) | 2020-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110265780B (en) | Stealth antenna housing with medium-frequency broadband wave-transmitting, high-frequency and low-frequency polarization conversion | |
| CN108615976B (en) | Radome-based dual-passband/wide-stopband reconfigurable frequency selection surface | |
| CN107508017B (en) | Band-suction type broadband frequency selection structure and application thereof | |
| CN110504549B (en) | Graphene-based absorption-transmission integrated frequency selection surface | |
| CN107579352B (en) | Ultra-wideband frequency selective surface suitable for antenna housing | |
| CN102570020B (en) | Ultra-wideband trapped wave antenna with good rectangular degree and controllable stop band bandwidth | |
| CN107799903B (en) | Three-dimensional novel broadband frequency selection structure with suction | |
| CN107317116B (en) | High-resistance surface metamaterial waveguide slot antenna | |
| CN108365306B (en) | Novel dual-polarization low-pass-band suction type frequency selection structure | |
| CN114421152B (en) | Miniaturized reconfigurable frequency selective surface with high selective characteristics and application | |
| CN109411894B (en) | Dual-polarized broadband external suppression three-dimensional frequency selection surface | |
| CN110265788B (en) | Novel two-three-dimensional combined dual-polarized band-pass radar wave absorber | |
| CN109193167B (en) | Miniaturized frequency selective surface with low ratio of high resonance point to low resonance point | |
| CN110729532B (en) | Dual polarization absorbing/transmitting frequency selection structure based on wave absorbing silicon rubber | |
| CN111817011A (en) | Narrow-band-pass frequency selection surface | |
| CN107425290B (en) | Bilateral abrupt-drop bandwidth adjustable frequency selection surface | |
| CN114361806A (en) | Miniaturized suction-penetration integrated frequency selective surface | |
| CN110137685B (en) | Frequency selection surface structure applied to 5G communication and unit structure thereof | |
| CN109149094B (en) | Dipole antenna array | |
| CN114267958A (en) | Low-pass absorption type frequency selection structure with narrow transition band | |
| CN113013628B (en) | Compact high-efficiency reflection-free leaky-wave antenna | |
| CN112886220A (en) | Ultra-wideband antenna with three-notch characteristic | |
| CN111478035A (en) | Flexible double-stop-band UWB-MIMO antenna based on coplanar waveguide feed | |
| CN111541044A (en) | Dual-polarized three-passband three-dimensional frequency selection surface | |
| CN113131223B (en) | Electromagnetic wave absorber with dual polarization and double absorption bands |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |