CN118116836A - 晶片的加工装置 - Google Patents
晶片的加工装置 Download PDFInfo
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- CN118116836A CN118116836A CN202311526526.9A CN202311526526A CN118116836A CN 118116836 A CN118116836 A CN 118116836A CN 202311526526 A CN202311526526 A CN 202311526526A CN 118116836 A CN118116836 A CN 118116836A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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Abstract
本发明提供晶片的加工装置,其能够避免将晶片在磨削装置与蚀刻装置之间搬送时使晶片破损的危险,并且消除伴随装置间的移动的损失时间从而提高生产率。晶片的加工装置包含:卡盘工作台,其对晶片进行保持;磨削单元,其安装有磨削磨轮并且该磨削磨轮能够旋转,将对卡盘工作台所保持的晶片进行磨削的多个磨削磨具呈环状配设于该磨削磨轮;清洗单元,其对磨削完成的晶片进行清洗;以及蚀刻单元,其从进行了磨削的磨削面去除应变。安装于磨削单元的磨削磨轮比晶片的直径小,在晶片的外周残留环状的加强部而使内侧薄化,蚀刻单元向形成于晶片的外周的环状的加强部的内侧提供蚀刻液而从磨削面去除应变。
Description
技术领域
本发明涉及对晶片进行加工的加工装置。
背景技术
通过磨削装置将由交叉的多条分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片的背面薄化,然后通过切割装置分割成各个器件芯片,分割得到的器件芯片用于移动电话、个人计算机等电子设备。
另外,当对晶片的背面进行磨削而使晶片薄化时强度会变弱因而搬送变得困难,因此本申请人提出了如下的技术:在晶片的外周残留环状的加强部而对内侧进行磨削而薄化(例如参照专利文献1)。
并且,本申请人还提出了如下的技术:从残留环状的加强部而内侧被进行了磨削的晶片的磨削面通过蚀刻处理而去除磨削应变(例如参照专利文献2)。
专利文献1:日本特开2008-042081号公报
专利文献2:日本特开2008-047695号公报
在现有技术中,利用上述的专利文献1所记载的磨削装置在晶片的外周残留环状的加强部而对内侧进行磨削并收纳于盒等中,然后将该盒搬送至专利文献2所记载的蚀刻装置,对从该盒中搬出的晶片的磨削面提供蚀刻液而去除磨削应变,因此在晶片的搬送中存在使晶片破损的危险,并且产生伴随装置间的移动的损失时间,存在生产率差的问题。
发明内容
因此,本发明的目的在于提供晶片的加工装置,其能够避免将晶片在磨削装置与蚀刻装置之间搬送时晶片发生破损的危险,并且消除伴随装置间的移动的损失时间从而提高生产率。
根据本发明,提供晶片的加工装置,其对晶片进行加工,其中,该晶片的加工装置具有:卡盘工作台,其对晶片进行保持;磨削单元,其安装有磨削磨轮并且该磨削磨轮能够旋转,将对该卡盘工作台所保持的该晶片进行磨削的多个磨削磨具呈环状配设于该磨削磨轮;清洗单元,其对磨削完成的该晶片进行清洗;以及蚀刻单元,其从进行了磨削的磨削面去除应变,安装于该磨削单元的该磨削磨轮比该晶片的直径小,通过配设于该磨削磨轮的该磨削磨具,在该晶片的外周残留环状的加强部而将该加强部的内侧薄化,该蚀刻单元向形成于该晶片的外周的该环状的加强部的内侧提供蚀刻液而从磨削面去除应变。
优选该清洗单元包含:旋转工作台,其对晶片进行吸引保持而进行旋转;以及清洗水提供喷嘴,其向该旋转工作台所保持的该晶片的磨削面提供清洗水。该蚀刻单元包含:旋转工作台,其对该晶片进行吸引保持而进行旋转;以及蚀刻液提供喷嘴,其向该旋转工作台所保持的该晶片的磨削面提供蚀刻液。该蚀刻单元与该清洗单元可以共用该旋转工作台。
根据本发明的晶片的加工装置,不需要向另外准备的蚀刻装置搬送晶片,能够避免在装置间的搬送中使晶片破损的危险,并且不存在伴随装置间的搬送的损失时间,能够提高生产率。
附图说明
图1是利用本实施方式的加工装置进行加工的晶片的立体图。
图2是加工装置的整体立体图。
图3的(a)是示出将晶片载置于保持单元的状态的立体图,图3的(b)是示出实施磨削加工的状态的立体图。
图4的(a)是示出将晶片载置于清洗单元的旋转工作台的状态的立体图,图4的(b)是示出对晶片进行清洗的状态的立体图,图4的(c)是示出对晶片进行干燥的状态的立体图。
图5的(a)是示出将晶片载置于蚀刻单元的旋转工作台的状态的立体图,图5的(b)是示出对晶片实施蚀刻处理的状态的立体图,图5的(c)是示出对晶片进行清洗的状态的立体图,图5的(d)是示出对晶片进行干燥的状态的立体图。
标号说明
1:加工装置;2:装置壳体;2a:支承壁;3:磨削单元;30:主轴单元;300:主轴;301:磨轮安装座;302:磨削磨轮;303:磨削磨具;31:磨削进给机构;311:脉冲电动机;312:导轨;313:升降板;314:连结部件;315:导轨;32:主轴壳体;33:电动机;34:X轴进给机构;341:滚珠丝杠;342:脉冲电动机;4:保持单元;42:卡盘工作台;42a:吸附卡盘;42b:框部;5a:第一盒;5b:第二盒;6:暂放单元;62:凸部;7:第二搬送机构;71:保持部;8:第三搬送机构;81:保持部;9:清洗单元;9a:挡板;91:旋转工作台;92:清洗水提供喷嘴;92a:喷嘴前端部;93:空气喷嘴;93a:喷嘴前端部;10:晶片;10a:正面;10b:背面;12:器件;14:分割预定线;16:第一搬送机构;16a:手部;20:蚀刻单元;20a:挡板;21:旋转工作台;22:蚀刻液提供喷嘴;23:清洗水提供喷嘴;24:空气喷嘴;100:控制器;102:操作面板;L:清洗水;P:蚀刻液;W:空气。
具体实施方式
以下,参照附图对本发明实施方式的晶片的加工装置进行详细说明。
在图1中示出了通过本实施方式的晶片的加工装置1(参照图2)进行加工的晶片10。晶片10是由交叉的多条分割预定线14划分而在正面10a上形成有多个器件12的半导体(例如硅)的晶片。在通过加工装置1进行加工时,如图所示,在晶片10的正面10a上粘贴保护带T而一体化,如图1的最下部所示那样翻转,对背面10b进行加工。
在图2中示出了对上述晶片10进行加工的加工装置1。加工装置1具有大致长方体状的装置壳体2,该加工装置1具有:保持单元4,其对晶片10进行保持;磨削单元3,其对保持单元4所保持的晶片10进行磨削;清洗单元9,其对磨削完成的晶片10进行清洗;以及蚀刻单元20,其从磨削后的晶片10的磨削面去除应变。
加工装置1除了上述结构以外还具有:第一盒5a,其配设于图中近前侧,收纳加工前的晶片10;第二盒5b,其相对于第一盒5a配设于图中X轴方向的另一侧,收纳加工后的晶片10;暂放单元6,其与第一盒5a在图中Y轴方向上相邻地配设,进行晶片10的中心对准。上述的清洗单元9与第二盒5b在Y轴方向上相邻地配设,蚀刻单元20与上述的清洗单元9在X轴方向上相邻而配设于清洗单元9与暂放单元6之间。
加工装置1还具有:第一搬送机构16,其具有手部16a,该手部16a将收纳于第一盒5a内的晶片10搬送至暂放单元6,将通过清洗单元9进行了清洗的晶片10搬送至蚀刻单元20,将通过蚀刻单元20从磨削面去除了变形的晶片10搬送至第二盒5b中;第二搬送机构7,其载置于暂放单元6的上方,将通过多个凸部62进行了中心对准的晶片10搬送至通过省略图示的Y轴进给机构而定位于搬出搬入位置(图中近前侧)的保持单元4的卡盘工作台42上;第三搬送机构8,其将磨削加工后的晶片10从定位于该搬出搬入位置的卡盘工作台42搬送至清洗单元9;以及控制器100,其具有操作面板102。在清洗单元9中配设有:旋转工作台91,其对晶片10进行吸引保持而进行旋转;以及清洗水提供喷嘴92,其向旋转工作台91所保持的晶片10的磨削面提供清洗水。另外,在蚀刻单元20中配设有:旋转工作台21,其对晶片10进行吸引保持而进行旋转;以及蚀刻液提供喷嘴22,其向旋转工作台21所保持的晶片10的磨削面提供蚀刻液。
磨削单元3以能够沿上下方向移动的方式安装于一对导轨312上,该一对导轨312在竖立设置于装置壳体2的后端侧的支承壁2a的内侧面上沿Z轴方向(上下方向)延伸。磨削单元3由主轴单元30和使主轴单元30升降的磨削进给机构31构成,该主轴单元30包含:主轴300,其旋转自如地支承于主轴壳体32而具有垂直方向的轴心;磨削磨轮302,其隔着磨轮安装座301而安装于主轴300,在磨削磨轮302的下表面侧呈环状配设有多个磨削磨具303;以及电动机33,其使主轴300旋转。为了在晶片10的背面10b的外周残留环状的加强部而对内侧进行磨削而薄化,磨削磨轮302的直径按照比晶片10的直径小的尺寸设定。
磨削进给机构31具有:省略图示的滚珠丝杠,其在支承壁2a的背面侧配设于垂直方向(Z轴方向);脉冲电动机311,其与该滚珠丝杠的上端连结;导轨312,其配设于垂直方向;以及升降板313,其与该导轨312卡合,并且利用形成于背面侧的省略图示的螺母部与该滚珠丝杠螺合。主轴壳体32能够沿着该升降板313上安装的连结部件314的前表面上配设的沿X轴方向延伸的一对导轨315在X轴方向上移动,构成为能够通过X轴进给机构34在X轴方向上移动。X轴进给机构34由滚珠丝杠341和驱动该滚珠丝杠341的脉冲电动机342构成,滚珠丝杠341与主轴壳体32的螺母部螺合,从而能够驱动脉冲电动机342而使主轴单元30移动至X轴方向上的期望的位置。
保持单元4的卡盘工作台42在罩台41上突出,配设成通过省略图示的旋转驱动机构而旋转自如。卡盘工作台42由吸附卡盘42a和围绕该吸附卡盘42a的框体42b形成,该吸附卡盘42a由具有通气性的部件形成。在该框体42b上连接有省略图示的吸引单元,通过使该吸引单元进行动作,能够在吸附卡盘42a的上表面生成负压而对晶片10进行吸引支承。
控制器100由计算机构成,具有按照控制程序进行运算处理的中央运算处理装置(CPU)、存储控制程序等的只读存储器(ROM)、用于暂时存储检测出的检测值和运算结果等的能够读写的随机存取存储器(RAM)、输入接口以及输出接口(省略详细的图示)。控制器100与上述的各动作部连接,并且从操作面板102输入作业者的指示而控制各动作部。
本实施方式的加工装置1具有大致如上所述的结构,以下,对本实施方式的加工装置1的功能、作用更具体地进行说明。
加工装置1实施在根据图1进行了说明的晶片10的背面10b的外周残留环状的加强部10c(参照图3的(b))而对内侧进行磨削而薄化的加工。在实施晶片10的加工时,使参照图2进行了说明的第一搬送机构16进行动作,从第一盒5a中搬出未加工的晶片10并搬送至暂放单元6,实施晶片10的中心对准。接着,利用上述的第二搬送机构7的保持部71吸附保持于暂放单元6的晶片10,搬送至定位于搬出搬入位置的卡盘工作台42,如图3的(a)所示,将粘贴有保护带T的正面10a侧朝向下方、将背面10b侧朝向上方而载置。如果将晶片10载置于卡盘工作台42,则使上述的吸引单元进行动作而对晶片10进行吸引保持。
如果将晶片10吸引保持于卡盘工作台42,则使上述的省略图示的Y轴进给机构进行动作,将卡盘工作台42定位于主轴单元30的正下方的磨削位置,并使X轴进给机构34进行动作而将主轴单元30定位于X轴方向上的期望的位置。接着,使磨削单元3的电动机33进行动作,如图3的(b)所示,使主轴300向箭头R1所示的方向以规定的速度(例如为3000rpm)旋转,并且使卡盘工作台42向箭头R2所示的方向以规定的速度(例如为300rpm)旋转。接着,使上述磨削进给机构31进行动作,使主轴单元30向箭头R3所示的方向下降,并且从省略图示的磨削水提供机构向晶片10的背面10b提供磨削水且使磨削磨轮302的磨削磨具303抵接于与形成有器件12的内侧的区域对应的区域。
如果使磨削磨具303与晶片10的背面10b抵接,则以规定的速度(例如为1.0μm/s)进行磨削进给,将晶片10磨削至期望的厚度。此时,能够一边利用省略图示的适当的厚度测量器测量晶片10的厚度一边进行磨削。磨削磨轮302的直径设定为比晶片10的直径小并且始终经过晶片10的中心,如图所示,在晶片10的背面10b中,仅对与形成有器件12的区域对应的内侧的区域进行薄化,在外周则形成环状的加强部10c。
如果如上所述通过磨削单元3对晶片10的背面10b进行磨削而使内侧的区域薄化至期望的厚度并且在外周形成了环状的加强部10c,则使磨削单元3停止,将卡盘工作台42移动至上述的图1的近前侧的搬出搬入位置。接着,利用第三搬送机构8的保持部81吸附晶片10,如图4的(a)所示,搬送至清洗单元9的旋转工作台91而使保护带T侧朝向下方进行载置。旋转工作台91具有:吸附卡盘91a,其由具有通气性的部件形成;框体91b,其围绕该吸附卡盘91a;旋转轴91c,其与框体91b连结;省略图示的电动机,其对旋转轴91c进行旋转驱动;以及省略图示的吸引单元,其在吸附卡盘91a的上表面生成负压,使该吸引单元进行动作,对载置于上表面的晶片10进行吸引保持。
在将晶片10吸引保持于旋转工作台91之后,如图4的(b)所示,使旋转工作台91在箭头R4所示的方向上以规定的速度(例如为300rpm)旋转,并将清洗水提供喷嘴92的喷嘴前端部92a定位于晶片10的上方。接着,一边使该清洗水提供喷嘴92在箭头R5所示的方向上摆动,一边向晶片10的背面10b提供清洗水L,去除残留于晶片10的背面10b的磨削水、磨削屑等。如果使清洗单元9以规定的时间进行动作而清洗了晶片10的背面10b,则停止从清洗水提供喷嘴92提供清洗水L,使清洗水提供喷嘴92移动至旋转工作台91的外侧的待机位置。接着,继续旋转工作台91的旋转,利用离心力去除残留在旋转工作台91上的清洗水L。
根据需要,如图4的(c)所示,使配设于清洗单元9的空气喷嘴93进行动作,将喷嘴前端部93a定位于晶片10的背面10b上而吹送高压的空气W,并使空气喷嘴93在图中箭头R6所示的方向上摆动,将残留于晶片10的背面10b的清洗水L和磨削屑吹飞而使晶片10干燥。另外,在使晶片10干燥时,优选提高旋转工作台91的旋转速度(例如为3000rpm)。另外,在利用清洗单元9实施晶片10的清洗和干燥时,图2中被收纳于下方的挡板9a上升,形成包含旋转工作台91的密闭的清洗空间,防止清洗水L或空气W向外部泄漏。
在上述的晶片10的背面10b上,在被实施了磨削加工而薄化的内侧的区域中残留有磨削加工的磨削应变,在本实施方式的加工装置1中,实施以下说明的用于去除磨削应变的蚀刻处理。
利用清洗单元9进行了清洗的晶片10被上述的第一搬送机构16的手部16a吸附而搬出,被搬送至蚀刻单元20,如图5的(a)所示,载置于旋转工作台21。旋转工作台21具有:吸附卡盘21a,其具有通气性;框体21b,其围绕吸附卡盘21a;旋转轴21c,其与框体21b连结;省略图示的电动机,其对旋转轴21c进行旋转驱动;以及省略图示的吸引单元,其在吸附卡盘21a的上表面生成负压,使该吸引单元进行动作,对载置于上表面的晶片10进行吸引保持。
在将晶片10载置于旋转工作台21并进行吸引保持之后,如图5的(b)所示,使旋转工作台21在箭头R7所示的方向上以规定的速度(例如为100rpm)旋转,将蚀刻液提供喷嘴22的喷嘴前端部22a定位于晶片10的上方。接着,一边使该蚀刻液提供喷嘴22在箭头R8所示的方向上摆动,一边按照规定的时间(例如为60秒)提供蚀刻液P。作为蚀刻液P,例如使用作为氢氟酸与硝酸的混合液的混酸液、TMAH(四甲基氢氧化铵)液等。
如果如上所述使蚀刻液提供喷嘴22按照该规定的时间进行动作而向晶片10的背面10b的磨削面提供了蚀刻液P,则停止从蚀刻液提供喷嘴22提供蚀刻液P,使蚀刻液提供喷嘴22移动至旋转工作台21的外侧的待机位置,如图5的(c)所示,将清洗水提供喷嘴23的喷嘴前端部23a定位于晶片10的上方。接着,一边使该清洗水提供喷嘴23在箭头R9所示的方向上摆动一边按照规定的时间提供清洗水L,利用清洗水L去除残留于晶片10的背面10b的蚀刻液P。此时,使旋转工作台21的旋转速度例如上升至300rpm。若使清洗水提供喷嘴23按照规定的时间进行动作而从晶片10的背面10b去除了蚀刻液P,则停止从清洗水提供喷嘴23提供清洗水L而使清洗水提供喷嘴23退避至旋转工作台21的外侧的待机位置。
在停止了清洗水L的提供之后,继续旋转工作台21的旋转,利用离心力去除残留在晶片10的背面10b上的清洗水L。根据需要,如图5的(d)所示,使配设于蚀刻单元20的空气喷嘴24进行动作,将喷嘴前端部24a定位于晶片10的背面10b上,使空气喷嘴24在图中箭头R10所示的方向上摆动而吹送高压的空气W,将残留于晶片10的背面10b的清洗水L吹飞而使晶片10干燥。另外,在使晶片10干燥时,优选进一步提高旋转工作台21的旋转速度(例如为3000rpm)。另外,在通过蚀刻单元20实施上述的蚀刻液P的提供、基于清洗水L的清洗以及基于空气W的干燥时,使图2中收纳于下方的挡板20a上升,形成包含旋转工作台21的密闭的蚀刻处理空间,防止蚀刻液P、清洗水L、空气W向外部泄漏。
在利用蚀刻单元20对晶片10的背面10b的磨削面提供蚀刻液P而去除了磨削应变之后,利用上述的第一搬送机构16的手部16a吸附载置于旋转工作台21的晶片10,将晶片10搬送至为了收纳加工完成的晶片10而准备的第二盒5b的规定的位置而进行收纳,完成晶片10的加工。
如上所述,在本实施方式的加工装置1中,通过对晶片10的背面10b的与形成有器件12的内侧的区域对应的区域进行磨削,在外周形成环状的加强部10c,通过配设于该加工装置1的蚀刻单元20向形成于晶片10的背面10b的外周的环状的加强部10c的内侧的磨削面提供蚀刻液P,能够从背面10b的磨削面去除应变。由此,无需将晶片10搬送至另外准备的蚀刻装置,能够避免在装置间的搬送中使晶片10破损的危险,并且不存在伴随装置间的搬送的损失时间,提高生产率。
在上述的实施方式中,对于加工装置1,与清洗单元9相邻地配设蚀刻单元20,在利用清洗单元9对晶片10进行了清洗之后,使用第一搬送机构16将晶片10搬送至蚀刻单元20并实施蚀刻处理。但是,本发明不限于此,也可以使清洗单元9和蚀刻单元20一体地共用旋转工作台,并且配设蚀刻液提供喷嘴22,使清洗单元9具有上述的蚀刻单元20的功能。在该情况下,也能够共用清洗水提供喷嘴和空气喷嘴,不从清洗单元9的旋转工作台91搬出晶片10便能够实施磨削加工后的清洗和蚀刻处理,能够节省将晶片10从清洗单元9搬送至蚀刻单元20的工夫,能够更高效地对晶片10进行加工。不过,通过如上述的实施方式那样分别设置清洗单元9和蚀刻单元20,具有如下的优点:不会将磨削屑带入实施蚀刻处理的空间中,能够使实施蚀刻处理的空间保持清洁的状态,能够防止晶片10的污染,并且能够区分包含磨削屑的清洗水L的废液和用于蚀刻处理的蚀刻液P的废液而进行处理。
另外,在上述的实施方式中,在蚀刻单元20中配设蚀刻液提供喷嘴22、清洗水提供喷嘴23以及空气喷嘴24,通过各个喷嘴实施蚀刻液P的提供、清洗水L的提供以及空气W的喷射,但也可以构成为共用一根喷嘴,通过适当地切换蚀刻液P、清洗水L、空气W而向该共用的喷嘴进行提供来实施蚀刻处理。
Claims (3)
1.一种晶片的加工装置,其对晶片进行加工,其中,
该晶片的加工装置具有:
卡盘工作台,其对晶片进行保持;
磨削单元,其安装有磨削磨轮并且该磨削磨轮能够旋转,将对该卡盘工作台所保持的该晶片进行磨削的多个磨削磨具呈环状配设于该磨削磨轮;
清洗单元,其对磨削完成的该晶片进行清洗;以及
蚀刻单元,其从进行了磨削的磨削面去除应变,
安装于该磨削单元的该磨削磨轮比该晶片的直径小,通过配设于该磨削磨轮的该磨削磨具,在该晶片的外周残留环状的加强部而将该加强部的内侧薄化,
该蚀刻单元向形成于该晶片的外周的该环状的加强部的内侧提供蚀刻液而从磨削面去除应变。
2.根据权利要求1所述的晶片的加工装置,其中,
该清洗单元包含:
旋转工作台,其对晶片进行吸引保持而进行旋转;以及
清洗水提供喷嘴,其向该旋转工作台所保持的该晶片的磨削面提供清洗水,
该蚀刻单元包含:
旋转工作台,其对该晶片进行吸引保持而进行旋转;以及
蚀刻液提供喷嘴,其向该旋转工作台所保持的该晶片的磨削面提供蚀刻液。
3.根据权利要求2所述的晶片的加工装置,其中,
该蚀刻单元与该清洗单元共用该旋转工作台。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2022190007A JP2024077823A (ja) | 2022-11-29 | 2022-11-29 | ウエーハの加工装置 |
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US (1) | US20240177999A1 (zh) |
JP (1) | JP2024077823A (zh) |
KR (1) | KR20240080116A (zh) |
CN (1) | CN118116836A (zh) |
DE (1) | DE102023211633A1 (zh) |
TW (1) | TW202422680A (zh) |
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JP5254539B2 (ja) | 2006-08-09 | 2013-08-07 | 株式会社ディスコ | ウエーハ研削装置 |
JP4937674B2 (ja) | 2006-08-16 | 2012-05-23 | 株式会社ディスコ | ウエーハのエッチング方法 |
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- 2023-11-20 US US18/513,969 patent/US20240177999A1/en active Pending
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DE102023211633A1 (de) | 2024-05-29 |
US20240177999A1 (en) | 2024-05-30 |
JP2024077823A (ja) | 2024-06-10 |
TW202422680A (zh) | 2024-06-01 |
KR20240080116A (ko) | 2024-06-05 |
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