CN118082006A - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
- Publication number
- CN118082006A CN118082006A CN202211504208.8A CN202211504208A CN118082006A CN 118082006 A CN118082006 A CN 118082006A CN 202211504208 A CN202211504208 A CN 202211504208A CN 118082006 A CN118082006 A CN 118082006A
- Authority
- CN
- China
- Prior art keywords
- semiconductor wafer
- semiconductor
- wafer
- glue
- spraying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 75
- 239000003292 glue Substances 0.000 claims abstract description 47
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 238000005507 spraying Methods 0.000 claims abstract description 17
- 239000007921 spray Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000000084 colloidal system Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 2
- 230000001070 adhesive effect Effects 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 1
- 238000005520 cutting process Methods 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The processing method of the wafer comprises the following steps: spraying UV liquid glue on the surface of the semiconductor wafer; solidifying the UV liquid glue; dicing the semiconductor wafer into individual semiconductor units; and removing the UV gel on the semiconductor unit.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a wafer processing method.
Background
In the field of semiconductor manufacturing, a wafer is generally composed of a plurality of elongated strips in units of a semiconductor cell array, and is finally cut into individual semiconductor cells after a series of processing steps. The cutting means are usually grinding wheels or blades. Thus, during dicing, the semiconductor wafer is susceptible to scratches by the impact of the blade, chips and crushed diamond particles, which adversely affect the performance of the semiconductor wafer, which is highly undesirable.
Therefore, there is a need to provide a wafer processing method to overcome the above drawbacks.
Disclosure of Invention
The invention aims to provide a wafer processing method, which can avoid scratches and improve the yield when a semiconductor wafer is cut.
In order to achieve the above object, the present invention provides a processing method of a wafer, including the following steps:
spraying UV liquid glue on the surface of the semiconductor wafer;
Solidifying the UV liquid glue;
dicing the semiconductor wafer into individual semiconductor units; and
And removing the UV colloid on the semiconductor unit.
Compared with the prior art, the method has the advantages that the surface protection is carried out by using the UV glue before the semiconductor wafer is cut, the UV liquid glue is sprayed on the surface of the semiconductor wafer, then the UV liquid glue is solidified by adopting ultraviolet light, the solidified glue forms a protective layer on the surface of the wafer, then the semiconductor wafer is cut and separated to form an independent semiconductor unit, and the UV glue on the semiconductor unit is removed after the cutting is finished. Therefore, the protection can be formed on the semiconductor surface in the cutting process, the possibility of scratches on the semiconductor surface is reduced as much as possible, and the yield is improved.
Preferably, the spraying of the UV liquid glue includes: and rotating the semiconductor wafer, and controlling a nozzle of the glue spraying device to spray towards the center position of the semiconductor wafer.
Preferably, the spraying of the UV liquid glue further comprises: and controlling the nozzle to spray to the edge position of one side of the semiconductor wafer, and moving back and forth between the edge position of one side of the semiconductor wafer and the edge position of the other side of the semiconductor wafer to spray.
Preferably, the semiconductor wafer is fixed on a rotary table, and the rotating speed of the rotary table is 1000-1500rmp.
Preferably, the thickness of the sprayed UV liquid glue on the semiconductor wafer is 1-3 mu m.
Preferably, the semiconductor wafer is cleaned before the UV liquid glue is sprayed.
Preferably, removing the UV gel on the semiconductor unit includes: coating by using a UV glue dissolving agent; or heating the semiconductor unit to soften the UV gel.
Detailed Description
The processing method of the wafer of the present invention is further described below with reference to examples, but the present invention is not limited thereto. The method aims at providing a wafer processing method, so that scratches generated during semiconductor wafer cutting are avoided or reduced, and the yield is improved.
In one embodiment of the wafer processing method of the present invention, the method comprises the steps of:
spraying UV liquid glue on the surface of the semiconductor wafer;
Solidifying the UV liquid glue;
dicing the semiconductor wafer into individual semiconductor units; and
And removing the UV colloid on the semiconductor unit.
The invention uses UV glue to protect the surface of the semiconductor wafer before cutting, firstly sprays UV liquid glue on the surface of the semiconductor wafer, then uses ultraviolet light to solidify the UV liquid glue, the solidified glue forms a protective layer on the surface of the wafer, then cuts and separates to form an independent semiconductor unit, and removes the UV glue on the semiconductor unit after cutting is finished. Therefore, the protection can be formed on the semiconductor surface in the cutting process, the possibility of scratches on the semiconductor surface is reduced as much as possible, and the yield is improved.
In a preferred embodiment, the semiconductor wafer is cleaned prior to spraying the UV liquid glue. Specifically, the wiping is usually performed with alcohol for 20 to 30 minutes at 20 to 25 ℃.
Specifically, the UV liquid glue is sprayed in a rotating manner, for example, the semiconductor wafer is controlled to rotate, and the glue spraying device sprays the glue to a preset position. Specifically, the wafer is fixed on a turntable, and a nozzle is placed above the wafer and aligned with the center position of the wafer. And starting the rotary table to rotate so as to drive the wafer thereon to rotate. For example, the rotational speed of the rotary table is 1000-1500rmp. And controlling the nozzle to spray UV liquid glue, and spraying the center of the wafer to isolate the surface of the wafer from air. The temperature of the UV liquid glue should not exceed its heat-resistant temperature, for example, 70-80 ℃. The glue spraying time of the nozzle should also be controlled, for example, the nozzle stays in the center of the wafer and the total time of spraying the glue is 3-5 seconds.
In order to ensure uniformity of spraying, the nozzle is controlled to spray to the edge position of one side of the semiconductor wafer, and moves back and forth between the edge position of one side of the semiconductor wafer and the edge position of the other side of the semiconductor wafer to spray. Specifically, the nozzle moves back and forth along the diameter direction between one side edge of the wafer and the opposite side edge thereof to spray UV liquid glue at a speed of 80-100 mm/s. The nozzle stays at the middle position between the center of the wafer and the edge of the wafer and sprays the glue for 5-10 seconds.
After the glue is applied, the surface of the semiconductor wafer is irradiated by an ultraviolet lamp, so that the semiconductor wafer is solidified to form UV colloid, and the solidification time is 30-40 minutes. The thickness of the UV gel is 1-3 μm.
The semiconductor wafer is then diced with a suitable cutter into individual semiconductor units. It should be noted that the cutting method may be performed by conventional means, and is not limited.
At this time, UV gel is still present on some surfaces of the individual semiconductor units, which need to be removed. For example, a UV glue can be applied to its surface to soften it and release it; or heating the semiconductor unit, for example at a temperature higher than the highest temperature resistance of the UV glue, to soften and thereby remove the UV glue. Further, the semiconductor unit is cleaned to remove the remaining UV gel. Thus, the machining operation is completed.
In summary, the surface protection is performed by using the UV glue before dicing the semiconductor wafer, the UV liquid glue is sprayed on the surface of the semiconductor wafer, then the UV liquid glue is cured by using ultraviolet light, the cured glue forms a protective layer on the surface of the wafer, dicing is performed to separate and form an independent semiconductor unit, and the UV glue on the semiconductor unit is removed after dicing is completed. Therefore, the protection can be formed on the semiconductor surface in the cutting process, the possibility of scratches on the semiconductor surface is reduced as much as possible, and the yield is improved.
The foregoing disclosure is only illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, which is defined by the appended claims.
Claims (7)
1. The wafer processing method is characterized by comprising the following steps of:
spraying UV liquid glue on the surface of the semiconductor wafer;
Solidifying the UV liquid glue;
dicing the semiconductor wafer into individual semiconductor units; and
And removing the UV colloid on the semiconductor unit.
2. The method of processing of claim 1, wherein the spraying of the UV liquid glue comprises: and rotating the semiconductor wafer, and controlling a nozzle of the glue spraying device to spray towards the center position of the semiconductor wafer.
3. A method of processing as claimed in claim 2, wherein: the spraying of the UV liquid glue further comprises: and controlling the nozzle to spray to the edge position of one side of the semiconductor wafer, and moving back and forth between the edge position of one side of the semiconductor wafer and the edge position of the other side of the semiconductor wafer to spray.
4.A method of processing as claimed in claim 2, wherein: the semiconductor wafer is fixed on a rotary table, and the rotating speed of the rotary table is 1000-1500rmp.
5. The process of claim 1, wherein: the thickness of the UV liquid adhesive sprayed on the semiconductor wafer is 1-3 mu m.
6. The process of claim 1, wherein: and cleaning the semiconductor wafer before spraying the UV liquid adhesive.
7. The method of processing of claim 6, wherein removing the UV gel on the semiconductor unit comprises: coating by using a UV glue dissolving agent; or heating the semiconductor unit to soften the UV gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211504208.8A CN118082006A (en) | 2022-11-28 | 2022-11-28 | Wafer processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211504208.8A CN118082006A (en) | 2022-11-28 | 2022-11-28 | Wafer processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118082006A true CN118082006A (en) | 2024-05-28 |
Family
ID=91162260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211504208.8A Pending CN118082006A (en) | 2022-11-28 | 2022-11-28 | Wafer processing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118082006A (en) |
-
2022
- 2022-11-28 CN CN202211504208.8A patent/CN118082006A/en active Pending
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