CN117438506A - Manufacturing and using method of cutting protection layer of LED wafer - Google Patents
Manufacturing and using method of cutting protection layer of LED wafer Download PDFInfo
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- CN117438506A CN117438506A CN202210820992.7A CN202210820992A CN117438506A CN 117438506 A CN117438506 A CN 117438506A CN 202210820992 A CN202210820992 A CN 202210820992A CN 117438506 A CN117438506 A CN 117438506A
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000005520 cutting process Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000003698 laser cutting Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 25
- 238000004140 cleaning Methods 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 9
- 238000002679 ablation Methods 0.000 claims description 3
- 238000011010 flushing procedure Methods 0.000 claims description 2
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 2
- 239000012498 ultrapure water Substances 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 24
- 239000000428 dust Substances 0.000 abstract description 5
- 239000002699 waste material Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 3
- 238000007710 freezing Methods 0.000 abstract description 2
- 230000008014 freezing Effects 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 238000003860 storage Methods 0.000 abstract description 2
- 238000004065 wastewater treatment Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000002351 wastewater Substances 0.000 description 5
- 238000000608 laser ablation Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 102100029469 WD repeat and HMG-box DNA-binding protein 1 Human genes 0.000 description 3
- 101710097421 WD repeat and HMG-box DNA-binding protein 1 Proteins 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 206010041662 Splinter Diseases 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
Abstract
The invention relates to the technical field of semiconductor chips, in particular to a manufacturing and using method of a cutting protection layer of an LED wafer, which comprises the following steps: (1) Attaching a wafer to a blue film carrier, and fixing the wafer by using a circular Frame; (2) placing the Frame onto a freezer slide table; (3) Adjusting the running water speed and time of the refrigerator to freeze the blue film and the surface of the wafer, wherein the thickness of the ice layer is 30-100um; (4) taking out the Frame and rapidly transferring to a laser cutting device; (5) the laser cutting device cuts according to the required pattern. According to the manufacturing and using method of the cutting protection layer of the LED wafer, pure water commonly used in the semiconductor industry is used as a raw material, an ice layer with the thickness of 30-100 microns is obtained by means of low-temperature freezing of the pure water, the wafer is covered by the ice layer, pollution of gasified and splashed dust to the wafer in the cutting process is prevented, chemical transportation and storage of protection liquid are avoided, waste liquid does not need to be subjected to waste water treatment, and the manufacturing and using method of the cutting protection layer of the LED wafer has the advantages of being low in cost, environment-friendly and convenient.
Description
Technical Field
The invention relates to the technical field of semiconductor chips, in particular to a manufacturing and using method of a cutting protection layer of an LED wafer.
Background
In the semiconductor chip manufacturing process, dicing is a process of dividing the whole chip after the processes of photolithography, film plating, thinning and the like into single crystal grains with required sizes, which is an indispensable procedure in the semiconductor chip manufacturing process. For semiconductor chips, the most widely used dicing methods in the industry are saw blade dicing and laser dicing. The laser cutting is a novel cutting technology which appears along with the development of laser technology, and mainly comprises two types of laser surface cutting and invisible cutting. The laser cutting is to focus laser beam with certain energy density and wavelength on the surface or inside of the chip, burn scratch on the surface or inside of the chip with laser, and then crack along the scratch with a splinter machine to form a plurality of small chips.
In the process of laser surface cutting, the material back melting, gasification and splashing generated by high-energy ablation can cause dust to drop and adhere to the surface of crystal grains to influence the next process, and all the materials have adverse effects on devices. In order to solve the problem, the laser pulse width can be effectively improved under the condition that the laser pulse width reaches the picosecond level or less from the two aspects of the laser and the cutting method, but the current picosecond laser is high in price and high in equipment cost. The cutting method may use a cutting protection liquid to coat the surface to reduce adverse effects such as dust or thermal effects.
The wafer surface is usually coated by using a cutting protection liquid, the protection liquid is a viscous liquid, the components are a mixture of an organic solvent and water, and tail water treatment is required for the use and recovery of the protection liquid and the water used in the protection liquid removal process at present with increasingly strict environmental protection. As CN113814575a discloses a laser cutting protection liquid, and a preparation method and application thereof, the laser cutting protection liquid comprises a combination of water-soluble resin, azeotropic solvent, polyalcohol, water-soluble ultraviolet absorbent, water-soluble antioxidant, pH regulator and anticorrosive agent; the azeotropic solvent consists of water and a high boiling point solvent with a boiling point higher than 145 ℃; and CN109207272A discloses a chip laser cutting protection liquid which comprises a surfactant, an organic cleaning agent, an organic solvent, a corrosion inhibitor and a coupling agent. When the laser cutting chip is used, the laser cutting protection liquid is scattered on the surface of the chip and uniformly spread on the whole surface of the chip. The surfactant component and the organic solvent can decompose substances remained on the surface of the chip into tiny particles or react chemically, and dissolve the tiny particles or the react chemically in the organic cleaning agent solution, so that the cleaning capability of the surface of the chip is achieved. Although the protection liquid can protect the wafer during laser cutting, the waste water and waste liquid after use are treated, the production cost is high, and the environment is easy to be polluted.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a manufacturing and using method of a cutting protection layer of an LED wafer, which is characterized in that the wafer is covered by an ice layer manufactured by low-temperature chilled water, so that the pollution of gasified and splashed dust to the wafer in the cutting process is prevented, and the problems are solved.
In order to achieve the above purpose, the invention is realized by the following technical scheme: a manufacturing and using method of a cutting protection layer of an LED wafer comprises the following steps:
(1) Attaching a wafer to a blue film carrier, and fixing the wafer by using a circular Frame;
(2) Placing the Frame on a refrigerator wafer table;
(3) Adjusting the running water speed and time of the refrigerator to freeze the blue film and the surface of the wafer, wherein the thickness of the ice layer is 30-100um;
(4) Taking out the Frame and rapidly transferring to laser cutting equipment;
(5) The laser cutting equipment cuts according to the required pattern;
(6) After cutting is completed, the low-temperature clamp and the blue film are taken out;
(7) Taking down the low-temperature clamp, and placing the blue film into pure water for flushing;
(8) And cleaning the blue film carrier by using two fluids to obtain a clean and dry cut wafer.
Preferably, in the step (1), the wafer is thinned, and the thickness of the wafer is 80-200 μm.
Preferably, in the step (2), the refrigerator has a temperature adjusting capability of-18 ℃ to 5 ℃, the upper part of the refrigerator is a low temperature zone, the temperature is-10 ℃ to-5 ℃, and the bottom temperature is-2 ℃ to 2 ℃.
Preferably, in the step (3), the running water is pure water ultrapure water in the semiconductor industry, and the resistivity of the water reaches 8-10MΩ.
Preferably, in the step (3), the thickness of the ice layer is 30-100um.
Preferably, in step (4), the laser cutting device is a laser surface ablation cutter, and the laser wavelength may be any wavelength of ultraviolet, green light, infrared, etc. The wafer bearing table of the laser scribing machine is provided with a temperature control device at the temperature of between 5 ℃ below zero and 1 ℃ below zero.
The invention is not fully described by the prior conventional technology in the field, and the equipment which is not fully described is the prior device.
The invention provides a manufacturing and using method of a cutting protection layer of an LED wafer, which has the following beneficial effects:
1. according to the manufacturing and using method of the cutting protection layer of the LED wafer, pure water commonly used in the semiconductor industry is used as a raw material, an ice layer with the thickness of 30-100 microns is obtained by means of low-temperature freezing of the pure water, the wafer is covered by the ice layer, pollution of gasified and splashed dust to the wafer in the cutting process is prevented, chemical transportation and storage of protection liquid are avoided, waste liquid does not need to be subjected to waste water treatment, and the manufacturing and using method of the cutting protection layer of the LED wafer has the advantages of being low in cost, environment-friendly and convenient.
Drawings
FIG. 1 is a top view of a wafer of the present invention after placement of a Frame;
FIG. 2 is a side view of the wafer of the present invention after placement of a Frame;
FIG. 3 is a schematic view of a refrigerator freezer Frame of the present invention.
In the figure: 1. a wafer; 2. frame; 3. blue film.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments.
Example 1: a manufacturing and using method of a protective layer of an LED wafer comprises the following steps:
(1) A wafer with a thickness of 100 μm was laminated to the blue film and fixed to the Frame;
(2) Placing the Frame on a piece bearing table of a refrigerator, setting the temperature of the refrigerator, and controlling the temperature of the upper part to be-8 to-5 ℃;
(3) Controlling the outflow rate of pure water at 50-100ml/min for 2-3min, standing for 10min, and forming an ice layer with thickness of 50-100um on the surface;
(4) Taking the Frame out of the refrigerator, and placing the Frame on a wafer carrying table of a laser dicing saw within 20 seconds, wherein the temperature of the wafer carrying table is set to be between-5 ℃ and-1 ℃;
(5) Performing laser scribing operation according to the wafer graph, wherein the laser ablation part is a region from the surface of the wafer to the inside 10 or 20um of the wafer, namely from the bottom surface of the ice layer to the inside of the wafer, and the laser scribing speed is 100-200mm/S according to the cutting depth requirement;
(6) Taking out the Frame after the completion of the step (5), placing the Frame into a two-fluid cleaning machine, performing two-fluid cleaning by using pure water and nitrogen at room temperature, removing ice layers and splashed materials on the surface, namely finishing the removal of a protective layer, and finishing cutting;
(7) The waste water in the process can be directly discharged without treatment.
Example 2: a manufacturing and using method of a protective layer of an LED wafer comprises the following steps:
(1) A wafer with a thickness of 100 μm was laminated to the blue film and fixed to the Frame;
(2) Placing the Frame on a piece bearing table of a refrigerator, setting the temperature of the refrigerator, and controlling the temperature of the upper part to be-8 to-5 ℃;
(3) Controlling the outflow rate of pure water to 50-100ml/min, and the water flow time to 2-3min, rotating the wafer bearing table along the axis at the rotating speed of 10-30rpm/min for 8min, wherein an ice layer with uniform thickness of 30-80um can be formed on the surface;
(4) Taking the Frame out of the refrigerator, and placing the Frame on a wafer carrying table of a laser dicing saw within 20 seconds, wherein the temperature of the wafer carrying table is set to be between-5 ℃ and-1 ℃;
(5) Performing laser scribing operation according to the wafer graph, wherein the laser ablation part is a region from the surface of the wafer to the inside 10 or 20um of the wafer, namely from the bottom surface of the ice layer to the inside of the wafer, and the laser scribing speed is 100-200mm/S according to the cutting depth requirement;
(6) Taking out the Frame after the completion of the step (5), placing the Frame into a two-fluid cleaning machine, performing two-fluid cleaning by using pure water and nitrogen at room temperature, removing ice layers and splashed materials on the surface, namely finishing the removal of a protective layer, and finishing cutting;
(7) The waste water in the process can be directly discharged without treatment.
Example 3: a manufacturing and using method of a protective layer of an LED wafer comprises the following steps:
(1) Attaching a wafer with a thickness of 100-200 μm to the blue film and fixing to the Frame;
(2) Placing the Frame on a piece bearing table of a refrigerator, setting the temperature of the refrigerator, and controlling the temperature of the upper part to be-8 to-5 ℃;
(3) Controlling the outflow rate of pure water to 50-100ml/min, and the water flow time to 2-3min, rotating the wafer bearing table along the axis at the rotating speed of 10-30rpm/min for 8min, wherein an ice layer with uniform thickness of 30-80um can be formed on the surface;
(4) Taking the Frame out of the refrigerator, and placing the Frame on a wafer carrying table of a laser dicing saw within 20 seconds, wherein the temperature of the wafer carrying table is set to be between-5 ℃ and-1 ℃;
(5) Performing laser scribing operation according to the wafer graph, wherein the laser ablation part is a region from the surface of the wafer to the inside 10 or 20um of the wafer, namely from the bottom surface of the ice layer to the inside of the wafer, and the laser scribing speed is 100-200mm/S according to the cutting depth requirement;
(6) Taking out the Frame after the completion of the step (5), placing the Frame into a two-fluid cleaning machine, and cleaning the Frame by using pure water and nitrogen at room temperature to remove ice layers and splashed materials on the surface, thereby completing the removal of the protective layer;
(7) Placing the cleaned wafer into a splitting machine, splitting the wafer row by row and column by splitting, and realizing that each chip is physically independent;
(8) The waste water in the process can be directly discharged without treatment.
Comparative example 1: a cutting and splitting method of an LED wafer comprises the following steps:
(1) A wafer with a thickness of 100 μm was laminated to the blue film and fixed to the Frame;
(2) Placing the Frame into a coating machine for coating with a protective liquid;
(3) Symmetrically dripping the protective liquid on the surface of the wafer, then rotating the wafer at a high speed, and coating the whole wafer with the symmetrically dripped protective liquid;
(4) Taking the Frame out of the coater and placing the Frame on a wafer carrying table of a laser dicing saw;
(5) Performing laser scribing operation according to the wafer graph, wherein the laser ablation part is a region from the surface of the wafer to the inside of the wafer by 10 or 20um, namely, the bottom surface of the protective liquid is from the bottom surface of the protective liquid to the inside of the wafer, and the laser scribing speed is 100-200mm/S according to the cutting depth requirement;
(6) Taking out the Frame after the completion of the step (5), placing the Frame into a two-fluid cleaning machine, performing two-fluid cleaning by using pure water and nitrogen at room temperature, removing surface protection liquid and splashed materials, namely finishing the removal of the protection layer, and finishing cutting;
(7) Putting the Frame into a plasma cleaning machine, and cleaning the organic matters of the protective liquid which possibly remain on the surface;
(8) And (3) performing water treatment on the waste discharge in the steps (3) and (6) by accessing factory waste water and waste liquid, so as to achieve the national related discharge standard and realize discharge.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are based on directions or positional relationships shown in the drawings, are merely for convenience of description and simplification of description, and do not indicate or imply that the apparatus or element to be referred to must have a specific direction, be constructed and operated in the specific direction, and thus should not be construed as limiting the present invention; the terms "first," "second," "third," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, and furthermore, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "coupled," and the like are to be construed broadly, and may be fixedly coupled, detachably coupled, or integrally coupled, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A manufacturing and using method of a cutting protection layer of an LED wafer is characterized in that: the method comprises the following steps:
(1) Attaching a wafer to a blue film carrier, and fixing the wafer by using a circular Frame;
(2) Placing the Frame on a refrigerator wafer table;
(3) Adjusting the running water speed and time of the refrigerator to freeze the blue film and the surface of the wafer, wherein the thickness of the ice layer is 30-100um;
(4) Taking out the Frame and rapidly transferring to laser cutting equipment;
(5) The laser cutting equipment cuts according to the required pattern;
(6) After cutting is completed, the low-temperature clamp and the blue film are taken out;
(7) Taking down the low-temperature clamp, and placing the blue film into pure water for flushing;
(8) And cleaning the blue film carrier by using two fluids to obtain a clean and dry cut wafer.
2. The method for manufacturing and using the dicing protective layer of the LED chip according to claim 1, wherein: in the step (1), the wafer is thinned, and the thickness is 80-200 μm.
3. The method for manufacturing and using the dicing protective layer of the LED chip according to claim 1, wherein: in the step (2), the refrigerator has the temperature regulating capability of-18 ℃ to 5 ℃, the upper part of the refrigerator is a low temperature area, the temperature is-10 ℃ to-5 ℃, and the bottom temperature is-2 ℃ to 2 ℃.
4. The method for manufacturing and using the dicing protective layer of the LED chip according to claim 1, wherein: in the step (3), the running water is pure water ultrapure water in the semiconductor industry, and the resistivity of the water reaches 8-10MΩ & cm.
5. The method for manufacturing and using the dicing protective layer of the LED chip according to claim 1, wherein: in the step (3), the thickness of the ice layer is 30-100um.
6. The method for manufacturing and using the dicing protective layer of the LED chip according to claim 1, wherein: in the step (4), the laser cutting device is a laser surface ablation cutting machine, and the laser wavelength can be any wavelength of ultraviolet, green light, infrared and the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210820992.7A CN117438506A (en) | 2022-07-12 | 2022-07-12 | Manufacturing and using method of cutting protection layer of LED wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210820992.7A CN117438506A (en) | 2022-07-12 | 2022-07-12 | Manufacturing and using method of cutting protection layer of LED wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117438506A true CN117438506A (en) | 2024-01-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210820992.7A Pending CN117438506A (en) | 2022-07-12 | 2022-07-12 | Manufacturing and using method of cutting protection layer of LED wafer |
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| Country | Link |
|---|---|
| CN (1) | CN117438506A (en) |
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2022
- 2022-07-12 CN CN202210820992.7A patent/CN117438506A/en active Pending
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