CN118056195A - 减少基于伪信道的存储器系统中的时延 - Google Patents

减少基于伪信道的存储器系统中的时延 Download PDF

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Publication number
CN118056195A
CN118056195A CN202280067430.8A CN202280067430A CN118056195A CN 118056195 A CN118056195 A CN 118056195A CN 202280067430 A CN202280067430 A CN 202280067430A CN 118056195 A CN118056195 A CN 118056195A
Authority
CN
China
Prior art keywords
pseudo
channel
data bus
memory access
access command
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280067430.8A
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English (en)
Chinese (zh)
Inventor
S·托祖尔
P·德希穆克
J·徐
S·帕拉查拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN118056195A publication Critical patent/CN118056195A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G06F13/1684—Details of memory controller using multiple buses
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061—Improving I/O performance
    • G06F3/0611—Improving I/O performance in relation to response time
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G06F3/0635—Configuration or reconfiguration of storage systems by changing the path, e.g. traffic rerouting, path reconfiguration
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1016—Performance improvement
    • G06F2212/1024—Latency reduction
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2213/00—Indexing scheme relating to interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F2213/0022—Multibus

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Bus Control (AREA)
  • Dram (AREA)
  • Memory System (AREA)
CN202280067430.8A 2021-10-28 2022-10-03 减少基于伪信道的存储器系统中的时延 Pending CN118056195A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/452,606 US11893240B2 (en) 2021-10-28 2021-10-28 Reducing latency in pseudo channel based memory systems
US17/452,606 2021-10-28
PCT/US2022/045561 WO2023075993A1 (en) 2021-10-28 2022-10-03 Reducing latency in pseudo channel based memory systems

Publications (1)

Publication Number Publication Date
CN118056195A true CN118056195A (zh) 2024-05-17

Family

ID=84246003

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280067430.8A Pending CN118056195A (zh) 2021-10-28 2022-10-03 减少基于伪信道的存储器系统中的时延

Country Status (7)

Country Link
US (3) US11893240B2 (https=)
EP (1) EP4423618A1 (https=)
JP (1) JP2024542933A (https=)
KR (1) KR20240088958A (https=)
CN (1) CN118056195A (https=)
TW (1) TW202321896A (https=)
WO (1) WO2023075993A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11893240B2 (en) 2021-10-28 2024-02-06 Qualcomm Incorporated Reducing latency in pseudo channel based memory systems
US12147713B2 (en) * 2022-08-09 2024-11-19 Innosilicon Microelectronics (Zhuhai) Co., Ltd. High-bandwidth DDR DIMM, memory system, and operation method thereof
US20250061070A1 (en) * 2023-08-14 2025-02-20 Micron Technology, Inc. Memory device with a die having multiple pseudo channels per channel

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7269709B2 (en) * 2002-05-15 2007-09-11 Broadcom Corporation Memory controller configurable to allow bandwidth/latency tradeoff
DE10339787B4 (de) 2003-08-28 2005-11-03 Infineon Technologies Ag Speichermodul
US7263566B2 (en) * 2004-12-30 2007-08-28 Qualcomm Incorporated Method and apparatus of reducing transfer latency in an SOC interconnect
US8164936B2 (en) 2009-10-14 2012-04-24 Seagate Technology Llc Switched memory devices
US8819309B1 (en) * 2013-06-14 2014-08-26 Arm Limited Low latency bypass buffer
US9430434B2 (en) * 2013-09-20 2016-08-30 Qualcomm Incorporated System and method for conserving memory power using dynamic memory I/O resizing
KR20160076195A (ko) 2014-12-22 2016-06-30 에스케이하이닉스 주식회사 다수의 채널로 동작할 수 있는 적층 반도체 장치
US10402110B2 (en) * 2016-08-04 2019-09-03 Rambus Inc. Adjustable access energy and access latency memory system and devices
KR102395463B1 (ko) 2017-09-27 2022-05-09 삼성전자주식회사 적층형 메모리 장치, 이를 포함하는 시스템 및 그 동작 방법
US10546628B2 (en) * 2018-01-03 2020-01-28 International Business Machines Corporation Using dual channel memory as single channel memory with spares
US20190294548A1 (en) * 2018-03-21 2019-09-26 Macom Technology Solutions Holdings, Inc. Prefetch module for high throughput memory transfers
US10884958B2 (en) * 2018-06-25 2021-01-05 Intel Corporation DIMM for a high bandwidth memory channel
US10770129B2 (en) 2018-08-21 2020-09-08 Intel Corporation Pseudo-channeled DRAM
US10937518B2 (en) 2018-12-12 2021-03-02 Micron Technology, Inc. Multiple algorithmic pattern generator testing of a memory device
US11194726B2 (en) 2019-02-25 2021-12-07 Micron Technology, Inc. Stacked memory dice for combined access operations
US11308017B2 (en) * 2019-05-31 2022-04-19 Micron Technology, Inc. Reconfigurable channel interfaces for memory devices
US12347818B2 (en) 2021-03-26 2025-07-01 Intel Corporation Logic die in a multi-chip package having a configurable physical interface to on-package memory
US11893240B2 (en) 2021-10-28 2024-02-06 Qualcomm Incorporated Reducing latency in pseudo channel based memory systems
US20230013181A1 (en) * 2022-09-14 2023-01-19 Intel Corporation Method to implement half width modes in dram and doubling of bank resources

Also Published As

Publication number Publication date
US20230136996A1 (en) 2023-05-04
US20240111424A1 (en) 2024-04-04
US11893240B2 (en) 2024-02-06
EP4423618A1 (en) 2024-09-04
US12307092B2 (en) 2025-05-20
WO2023075993A1 (en) 2023-05-04
KR20240088958A (ko) 2024-06-20
US20250251862A1 (en) 2025-08-07
JP2024542933A (ja) 2024-11-19
TW202321896A (zh) 2023-06-01

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