CN118041281A - Acoustic wave resonator structure, acoustic wave device and preparation method thereof - Google Patents

Abstract

The invention provides an acoustic wave resonator structure, an acoustic wave device and a preparation method thereof, wherein, by arranging a polarization region with each parameter in a piezoelectric constant matrix and the corresponding parameter in the piezoelectric constant matrix of the piezoelectric crystal in the corresponding piezoelectric crystal right below an air gap region, the excitation of a high-order transverse stray mode can be effectively reduced or even eliminated, the in-band fluctuation is effectively reduced, the insertion loss and clutter interference of a passband are reduced, and the flat passband response is realized; the scheme is simple, the interdigital electrode is not required to be deformed, the preparation process is simple, the success rate is high, and the yield is high.

Description

Acoustic wave resonator structure, acoustic wave device and preparation method thereof

Technical Field

The invention belongs to the technical field of microelectronics, and relates to an acoustic wave resonator structure, an acoustic wave device and a preparation method of the acoustic wave device.

Background

The acoustic wave device has obvious advantages due to the characteristics of small size, simple manufacturing process, high performance and the like of the acoustic wave device facing the demands of miniaturization, low cost and the like of the radio frequency mobile terminal. However, the problem of spurious mode excitation still exists in the acoustic wave device to be solved, for example, when the target mode is excited, an unnecessary multi-order transverse spurious mode is generated between the resonant frequency and the antiresonant frequency of the target mode, so that a plurality of spurious resonant peaks are distributed in the response of the device, and corresponding ripples can appear in the passband of the filter device, thereby causing the problems of increased insertion loss, poor steepness of the edges of the passband, and the like, and seriously affecting the accuracy and stability of signal transceiving.

In the prior art, a scheme of deforming the patterned electrode is proposed, such as an apodization electrode, and the length of a transverse resonant cavity of each interdigital is adjusted to eliminate a high-order stray resonance peak, but the mode also can deteriorate the resonance performance of a target mode, so that the quality factor of a device is reduced and the like; and then, if the duty ratio or the mass loading of different areas of the interdigital electrode is adjusted, the speed profile curve is adjusted to inhibit a high-order stray mode, but the mode can improve the accuracy requirement of the line width of the electrode, and the process difficulty and the processing cost are increased.

Therefore, it is necessary to provide an acoustic wave resonator structure, an acoustic wave device, and a method of manufacturing the same.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an acoustic wave resonator structure, an acoustic wave device and a method for manufacturing the same, which are used for solving the problem of occurrence of a lateral spurious mode in response of the acoustic wave device in the prior art.

To achieve the above and other related objects, the present invention provides an acoustic wave resonator structure including:

a support substrate;

The piezoelectric layer is positioned on the upper surface of the supporting substrate;

The patterning electrode is positioned on the upper surface of the piezoelectric layer, wherein the patterning electrode comprises a central interdigital region and reflecting grating regions positioned at two sides of the central interdigital region in the sound wave propagation direction, and the central interdigital region comprises a first bus bar region, a first air gap region, an aperture region, a second air gap region and a second bus bar region in the aperture direction;

And each parameter in the piezoelectric constant matrix of the polarization region and the corresponding parameter in the piezoelectric constant matrix of the piezoelectric layer are opposite, wherein the polarization region comprises a first polarization region arranged in the piezoelectric layer corresponding to the position right below the first air gap region and a second polarization region arranged in the piezoelectric layer corresponding to the position right below the second air gap region, and the first polarization region and the second polarization region are symmetrically distributed.

Optionally, a piezoelectric monocrystalline substrate is provided to replace the support substrate and the piezoelectric layer which are stacked, and the piezoelectric monocrystalline substrate and the piezoelectric layer are made of the same material.

Optionally, the shape of the polarized sectors comprises one or a combination of triangles, rectangles, trapezoids, pentagons, hexagons, circles or ovals.

Optionally, the distribution of the polarized regions in the direction of propagation of the acoustic wave includes a continuous distribution or a spaced distribution.

Optionally, defining λ as a wavelength of a target acoustic wave, that is, a period of the interdigital electrode, and when the thickness of the piezoelectric layer is h, the thickness of the polarized region is 0.05λ -h; when the thickness of the piezoelectric single crystal substrate is T, the thickness of the polarized region is 0.05λ -T.

Optionally, the boundaries of the polarized sectors are in contact with the ends of the aperture sectors.

Optionally, the piezoelectric layer corresponding to the right lower part of the first bus bar area and/or the second bus bar area further comprises the polarization area; and the polarized regions corresponding to the right lower part of the first bus bar region and the polarized regions corresponding to the right lower part of the second bus bar region are symmetrically or asymmetrically distributed.

Optionally, the first bus bar further comprises a first additional finger located in the first air gap region and a second additional finger located in the second air gap region, wherein the first additional finger is electrically connected with the first bus bar, and the second additional finger is electrically connected with the second bus bar.

The invention also provides an acoustic wave device comprising any one of the acoustic wave resonator structures; the acoustic wave device includes at least one of a filter, a duplexer, and a multiplexer.

The invention also provides a method for preparing any acoustic wave resonator structure, which comprises the following steps:

Polarizing a part of the piezoelectric layer or the piezoelectric single crystal substrate to form the polarized region, and leaving an alignment mark;

forming the patterned electrode on the piezoelectric layer based on the alignment mark;

the preparation method of the polarized region comprises local bonding, local ion implantation, physical vapor deposition, chemical vapor deposition, magnetron sputtering or Czochralski crystal growth.

As described above, according to the acoustic wave resonator structure, the acoustic wave device and the preparation method thereof, the polarization regions with each parameter in the piezoelectric constant matrix being opposite to the corresponding parameter in the piezoelectric constant matrix of the piezoelectric crystal are arranged in the piezoelectric crystal corresponding to the air gap region, so that excitation of a high-order transverse stray mode can be effectively reduced or even eliminated, in-band fluctuation is effectively reduced, insertion loss and clutter interference of a passband are reduced, and flat passband response is realized; the scheme is simple, the interdigital electrode is not required to be deformed, the preparation process is simple, the success rate is high, and the yield is high.

Drawings

Fig. 1 shows a schematic cross-sectional view of an acoustic wave resonator structure based on a piezoelectric single crystal substrate in accordance with the present invention.

Fig. 2 is a schematic diagram showing a top view of an interdigital electrode of a conventional acoustic wave resonator structure and an acoustic wave resonator structure according to the present invention.

Fig. 3 is a diagram showing a comparison of crystal coordinates of a piezoelectric crystal before and after polarization in an acoustic wave resonator structure based on a piezoelectric single crystal substrate according to the present invention.

FIG. 4 is a graph showing the comparison of simulated admittance curves of excited horizontal shear waves in the structures of comparative example 1, example 1 and example 2 of the present invention.

Fig. 5 is a schematic diagram showing the comparison of crystal coordinates of a piezoelectric crystal before and after polarization in the acoustic wave resonator structure based on a heterogeneous substrate according to the present invention.

Fig. 6 is a schematic top view of an interdigital electrode of a conventional acoustic wave resonator and an acoustic wave resonator according to the present invention.

Fig. 7 is a graph showing the comparison of simulated admittance curves of excited horizontal shear waves in the structures of comparative examples 2, 3 and 4 of the present invention.

Fig. 8 is a diagram showing a comparison of crystal coordinate systems before and after polarization of piezoelectric crystals in the structures of comparative example 3 and example 5 of the present invention.

Fig. 9 is a schematic diagram showing the distribution of polarization regions in the acoustic wave resonator structure according to the present invention.

Fig. 10 is a schematic diagram showing the distribution of patterned electrodes in the acoustic wave resonator structure according to the present invention.

Description of the reference numerals

100. Support substrate

200. Piezoelectric layer

110. Piezoelectric single crystal substrate

300. Patterned electrode

401. First polarized region

402. Second polarized region

501. First additional finger

502. Second additional finger

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.

As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.

For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures, including embodiments in which the first and second features are formed in direct contact, as well as embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact, and further, when a layer is referred to as being "between" two layers, it may be the only layer between the two layers, or there may be one or more intervening layers.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be changed at will, and the layout of the components may be more complex.

As shown in fig. 5,6 and 10, the present application provides an acoustic wave resonator structure, which includes: the piezoelectric device comprises a support substrate 100, a piezoelectric layer 200, a patterned electrode 300 and a polarized region, wherein the piezoelectric layer 200 is positioned on the upper surface of the support substrate 100; the patterned electrode 300 is located on the upper surface of the piezoelectric layer 200, the patterned electrode 300 includes a central interdigital region and reflective grating regions (not shown) located at both sides of the central interdigital region in the acoustic wave propagation direction (defined as a first direction), the central interdigital region includes a first bus bar region, a first air gap region, an aperture region, a second air gap region and a second bus bar region in the aperture direction (defined as a second direction), and the first bus bar and the second bus bar are electrically connected with an electrical signal and a ground signal, respectively; each parameter in the piezoelectric constant matrix of the polarized region and the corresponding parameter in the piezoelectric constant matrix of the piezoelectric layer 200 are opposite, wherein the polarized region comprises a first polarized region 401 arranged in the piezoelectric layer 200 corresponding to the position right below the first air gap region and a second polarized region 402 arranged in the piezoelectric layer 200 corresponding to the position right below the second air gap region, and the first polarized region 401 and the second polarized region 402 are symmetrically distributed.

The polarized region in the piezoelectric layer 200 is formed by rotating the piezoelectric layer 200 counterclockwise by 180 ° about the first direction, i.e., the X direction in the drawing, based on the tangential direction of the piezoelectric layer 200, as shown in fig. 5. Because each parameter in the piezoelectric constant matrix of the polarization region in the piezoelectric layer 200 and the corresponding parameter in the piezoelectric constant matrix of the piezoelectric layer 200 are opposite, the excitation of the spurious mode can be reduced and eliminated, the loss of the transmission signal is reduced, and the excitation of the target sound wave is not influenced, so that the flat passband response is realized.

As shown in fig. 1 to 3, the present application further provides an acoustic wave resonator structure, including: in this structure, the piezoelectric single crystal substrate 110 may be regarded as a substitute for the support substrate 100 and the piezoelectric layer 200 which are stacked, and the material of the piezoelectric single crystal substrate 110 may be identical to that of the piezoelectric layer 200.

As examples, the shape of the polarized sectors may include one or a combination of triangles, rectangles, trapezoids, pentagons, hexagons, circles, or ovals, for example.

Specifically, several types of polarized regions having different morphologies are illustrated in fig. 9, but the shape of the polarized regions is not limited thereto and may be set according to specific needs.

As an example, the distribution of the polarized sectors in the propagation direction of the acoustic wave may include a continuous distribution or a spaced distribution.

As an example, the polarization region may be further included in the piezoelectric layer 200 corresponding to the first bus bar region and/or the second bus bar region directly below; the polarized regions corresponding to the right lower part of the first bus bar region and the polarized regions corresponding to the right lower part of the second bus bar region can be symmetrically or asymmetrically distributed.

Specifically, the distribution of the polarized sectors in the piezoelectric layer 200 in the first direction may be discontinuous or continuous. In the second direction, the polarization regions must be located directly under the air gap region, or located directly under the air gap region and the bus bar region, and the distribution of the polarization regions located directly under the air gap region is symmetrical, but the polarization regions located directly under the bus bar region may not be synchronous or have different morphologies, that is, the first bus bar region may be correspondingly provided with the polarization regions, the second bus bar region may not be provided with the polarization regions, or the polarization regions correspondingly provided by the first bus bar region and the polarization regions correspondingly provided by the second bus bar region may have different morphologies, and of course, the polarization regions correspondingly provided by the first bus bar region and the polarization regions correspondingly provided by the second bus bar region may also be symmetrically provided.

As an example, it is preferable that the boundary of the polarized region is in contact with the end of the aperture region, i.e., it is preferable that the polarized region occupies the corresponding entire air gap region in the second direction, in order to enhance the effect.

As an example, define λ as the wavelength of the target acoustic wave, i.e., the period of the interdigital electrode, and when the thickness of the piezoelectric layer 200 is h, the thickness of the polarized region is 0.05λ -h; when the thickness of the piezoelectric single crystal substrate 110 is T, the thickness of the polarized region is 0.05λ -T.

Specifically, in the thickness direction (defined as the third direction), the polarization region may be located on the surface layer of the piezoelectric layer 200, or the polarization region may be located on the inner layer of the piezoelectric layer 200, and if the thickness of the piezoelectric layer 200 is h when a heterogeneous substrate supporting the substrate 100+the piezoelectric layer 200 is used, the thickness of the polarization region is 0.05λ -h in the third direction, and when the piezoelectric single crystal substrate 110 is used, the thickness of the polarization region is 0.05λ -T when the thickness of the piezoelectric single crystal substrate 110 is T, wherein λ is the wavelength of the target acoustic wave, that is, equal to the period of the interdigital electrode.

As an example, fig. 9 (h) to 9 (k) further include a first additional finger 501 located in the first air gap region and a second additional finger 502 located in the second air gap region, where the first additional finger 501 is electrically connected to the first bus bar, and the second additional finger 502 is electrically connected to the second bus bar. The polarization regions may or may not exist in the piezoelectric layer corresponding to the positions directly below the first additional finger 501 and the second additional finger 502, and may be specifically set as required.

The present application also provides an acoustic wave device comprising any of the above acoustic wave resonator structures, wherein the acoustic wave device may comprise at least one of a filter, a duplexer, and a multiplexer, and the specific types are not limited herein.

The application also provides a preparation method of the acoustic wave resonator structure, which comprises the following steps:

Providing the support substrate 100;

forming the piezoelectric layer 200 on the surface of the support substrate 100;

polarizing a local area of the piezoelectric layer 200 to form the polarized region, and leaving an alignment mark;

The patterned electrode is disposed based on the alignment mark.

The stacked structure of the support substrate 100 and the piezoelectric layer 200 may be replaced with the piezoelectric single crystal substrate 110 having the same material as the piezoelectric layer 200.

Methods of forming the piezoelectric layer 200 on the surface of the support substrate 100 include, but are not limited to: bonding and peeling the piezoelectric single crystal with the support substrate 100 after ion implantation, and transferring the piezoelectric layer 200 to the upper surface of the support substrate 100; or bonding the piezoelectric single crystal to the support substrate 100, and grinding and polishing to a target thickness; or physical vapor deposition, chemical vapor deposition, magnetron sputtering, crystal growth by the czochralski method, etc., the piezoelectric layer 200 is formed on the surface of the supporting substrate 100, and the specific preparation method is not limited excessively.

The preparation method of the polarized region can be to locally bond after the target region is locally windowed, or realize the regulation and control of the material performance by local ion implantation; the method can also be deposition by physical vapor deposition, chemical vapor deposition, magnetron sputtering, crystal growth by Czochralski method, etc., and the specific preparation mode is not limited excessively.

The acoustic wave resonator structure of the present application is further described below with reference to comparative examples.

Comparative example 1: as shown in fig. 1, a schematic cross-sectional view of an acoustic resonator structure using lithium tantalate (LiTaO ₃) piezoelectric single crystal as a piezoelectric single crystal substrate and metal Al as a patterned electrode is shown, and a horizontal shear wave SH-SAW mode is excited and generated, as shown in fig. 2 (a) in top view.

Example 1 and example 2: the LiTaO ₃ piezoelectric monocrystal is used as a piezoelectric monocrystal substrate, the metal Al is used as a patterned electrode, a horizontal shear wave SH-SAW mode is excited and generated, and a piezoelectric polarization region positioned right below the whole air gap region is included in the piezoelectric layer. The cross-sectional schematic diagram of the resonator structure is the same as that of comparative example 1, as shown in fig. 1, and the top view is shown in fig. 2 (b).

In the structures shown in comparative examples 1, 1 and 2, liTaO ₃ was a single crystal substrate, 500 μm thick, 80nm thick patterned Al electrode, 1.2 μm interdigital period, and 0.5 duty cycle. In example 1, the thickness of the polarized region in the third direction was 90nm, and in example 2, the thickness of the polarized region in the third direction was 360nm.

The crystal coordinate system of the unpolarized region, which is shown in fig. 3 (a) with euler angles set to (0, 48,0) using a rotation YX 42 ° cut LiTaO ₃ piezoelectric substrate, has elastic constants, piezoelectric constants, and relative dielectric constant matrices as shown in the following formulas (1), (3), and (5), respectively.

The euler angle of the rotation-beveled LiTaO ₃ piezoelectric crystal of the polarized region is set to (0, 228,0), and the crystal coordinate system of the polarized region is shown in fig. 3 (b), and the elastic constant, piezoelectric constant, and relative dielectric constant matrices thereof are shown in the following formulas (2), (4), and (6).

Comparing the three types of matrixes respectively, it can be found that parameters of the elastic constant and the relative dielectric constant matrix are kept unchanged before and after polarization, and each parameter of the crystal piezoelectric constant matrix after polarization and the corresponding parameter of the crystal piezoelectric constant matrix before polarization are opposite.

Based on the structures shown in comparative example 1, example 1 and example 2, the simulated admittance curves of the acoustic wave resonator are shown in fig. 4. In the case of comparative example 1, the spurious mode excitation in the passband is more remarkable, and the problems of larger in-band fluctuation, increased insertion loss, serious clutter interference on signal transmission and the like are caused; for example 1, significant suppression of lateral spurious modes can be achieved when the polarization thickness is 90 nm; whereas for example 2, when the polarization thickness reaches 360nm, the transverse spurious modes are completely suppressed and eliminated, exhibiting effective transverse spurious mode suppression, so that the corresponding acoustic wave device can obtain a flat passband response and effectively reduce in-band jitter and loss. The admittance ratios of the target modes under the three structures are 81.4dB, 82.6dB and 81.8dB respectively, which shows that the excitation of the target modes is not affected, and the electromechanical coupling coefficients are 8.82%, 8.36% and 8.20% respectively, and are not significantly reduced. Therefore, according to the analysis, the resonator structure provided by the application has the advantages that the excitation of the target mode is not affected, and the excitation of the transverse stray mode can be effectively restrained.

Comparative example 2: silicon carbide (SiC) is used as a supporting substrate, a piezoelectric single crystal film of LiTaO ₃ is cut by rotating YX 42 degrees to serve as a piezoelectric layer, metal Al is used as a patterned electrode, and a horizontal shear wave SH-SAW mode is excited and generated. The resonator is schematically shown in fig. 5 (a), in which no polarized region exists in the LiTaO ₃ piezoelectric single crystal thin film, and the crystal coordinate system is marked on the left side of fig. 5 (a).

Examples 3 and 4: siC is used as a supporting substrate, a LiTaO ₃ piezoelectric monocrystal film is used as a piezoelectric layer, metal Al is used as a patterned electrode, and a horizontal shear wave SH-SAW mode is excited and generated. Wherein the piezoelectric layer includes a polarizing region located directly below the air gap region. The schematic structure of the resonator is shown in fig. 5 (b), in which a polarized region exists in the LiTaO ₃ piezoelectric single crystal thin film, the crystal coordinate system of the polarized region is marked on the left side of fig. 5 (b), and the crystal coordinate systems of other regions are the same as fig. 5 (a).

In the structures shown in comparative examples 2,3 and 4, the LiTaO ₃ piezoelectric single crystal thin film had a thickness of 360nm, the al electrode had a thickness of 80nm, the interdigital period was 1.2 μm, and the duty ratio was 0.5. As shown in fig. 6 (b), example 3, the polarized region was the entire air gap region, the entire interdigital period in the first direction, and as shown in fig. 6 (c), example 4, the polarized region was the partial air gap region, and only the middle half interdigital period in the first direction, wherein the thickness of the polarized region in the third direction was 360nm.

Based on the structures shown in comparative example 2, example 3 and example 4, simulated admittances and conductance curves of acoustic wave resonators are shown in fig. 7. In the case of comparative example 2, the spurious mode excitation in the passband is very remarkable, which causes larger in-band fluctuation, increases the insertion loss, and severely suffers clutter interference in signal transmission; for example 4, when the polarization thickness is 360nm, the polarization region is half an interdigital period in the first direction, most of the lateral spurious modes can be suppressed or reduced; for example 3, when the polarization thickness is 360nm and the polarization region is the entire interdigital period in the first direction, the transverse spurious mode is further suppressed, the acoustic wave device can obtain a relatively flat passband response, and in-band jitter and loss are effectively reduced.

Comparative example 3 and example 5: here, an example of polarization of the piezoelectric crystal in tangent is given, and the expression of the polarization region is based on how the original crystal rotates.

The piezoelectric single crystal of lithium niobate LiNbO ₃ having tangent X was used as a piezoelectric single crystal substrate, metallic Al was used as a patterned electrode, and a horizontal shear wave SH-SAW mode was excited to be generated, and the absence and presence of a polarized region were used as comparative example 3 and example 5, respectively. Fig. 8 shows a comparative schematic diagram of the crystal coordinate system before and after polarization of the piezoelectric crystal in the acoustic wave resonator structure.

The morphology of the polarized regions in some acoustic wave resonator structures according to the present application is also shown in fig. 9, but the morphology and distribution of the polarized regions are not limited thereto.

In summary, according to the acoustic resonator structure, the acoustic device and the preparation method thereof, by arranging the polarized regions with each parameter in the piezoelectric constant matrix and the corresponding parameter in the piezoelectric constant matrix of the piezoelectric crystal being opposite to each other in the piezoelectric crystal corresponding to the air gap region, the excitation of a high-order transverse stray mode can be effectively reduced or even eliminated, in-band fluctuation can be effectively reduced, insertion loss and clutter interference of a passband can be reduced, and flat passband response can be realized; the scheme is simple, the interdigital electrode is not required to be deformed, the preparation process is simple, the success rate is high, and the yield is high.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. An acoustic wave resonator structure, characterized in that the acoustic wave resonator structure comprises:

a support substrate;

The piezoelectric layer is positioned on the upper surface of the supporting substrate;

The patterning electrode is positioned on the upper surface of the piezoelectric layer, wherein the patterning electrode comprises a central interdigital region and reflecting grating regions positioned at two sides of the central interdigital region in the sound wave propagation direction, and the central interdigital region comprises a first bus bar region, a first air gap region, an aperture region, a second air gap region and a second bus bar region in the aperture direction;

And each parameter in the piezoelectric constant matrix of the polarization region and the corresponding parameter in the piezoelectric constant matrix of the piezoelectric layer are opposite, wherein the polarization region comprises a first polarization region arranged in the piezoelectric layer corresponding to the position right below the first air gap region and a second polarization region arranged in the piezoelectric layer corresponding to the position right below the second air gap region, and the first polarization region and the second polarization region are symmetrically distributed.

2. The acoustic wave resonator structure according to claim 1, characterized in that: and providing a piezoelectric monocrystalline substrate to replace the support substrate and the piezoelectric layer which are stacked, wherein the piezoelectric monocrystalline substrate and the piezoelectric layer are made of the same material.

3. Acoustic wave resonator structure according to claim 1 or2, characterized in that: the shape of the polarized regions comprises one or a combination of triangle, rectangle, trapezoid, pentagon, hexagon, circle or ellipse.

4. Acoustic wave resonator structure according to claim 1 or 2, characterized in that: the distribution of the polarized regions in the propagation direction of the acoustic wave includes a continuous distribution or a spaced distribution.

5. Acoustic wave resonator structure according to claim 1 or 2, characterized in that: defining lambda as the wavelength of a target sound wave, namely the period of the interdigital electrode, and when the thickness of the piezoelectric layer is h, the thickness of the polarized region is 0.05lambda-h; when the thickness of the piezoelectric single crystal substrate is T, the thickness of the polarized region is 0.05λ -T.

6. Acoustic wave resonator structure according to claim 1 or 2, characterized in that: the boundaries of the polarized sectors are in contact with the ends of the aperture sectors.

7. Acoustic wave resonator structure according to claim 1 or 2, characterized in that: the piezoelectric layer corresponding to the right lower part of the first bus bar area and/or the second bus bar area also comprises the polarization area; the polarized regions corresponding to the right lower part of the first bus bar region and the polarized regions corresponding to the right lower part of the second bus bar region are symmetrically or asymmetrically distributed.

8. Acoustic wave resonator structure according to claim 1 or 2, characterized in that: the first additional finger is electrically connected with the first bus bar, and the second additional finger is electrically connected with the second bus bar.

9. An acoustic wave device, characterized in that it comprises an acoustic wave resonator structure according to any of claims 1-8; the acoustic wave device includes at least one of a filter, a duplexer, and a multiplexer.

10. A method of manufacturing an acoustic wave resonator structure as claimed in any one of claims 1 to 8, comprising the steps of:

Polarizing a part of the piezoelectric layer or the piezoelectric single crystal substrate to form the polarized region, and leaving an alignment mark;

forming the patterned electrode on the piezoelectric layer based on the alignment mark;

the preparation method of the polarized region comprises local bonding, local ion implantation, physical vapor deposition, chemical vapor deposition, magnetron sputtering or Czochralski crystal growth.