CN110868187A - Ultrahigh frequency resonator structure based on arc-shaped electrode - Google Patents
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- 239000000463 material Substances 0.000 claims abstract description 33
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims description 21
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 235000019687 Lamb Nutrition 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
- H03H2009/02503—Breath-like, e.g. Lam? mode, wine-glass mode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
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Abstract
The invention discloses an ultrahigh frequency resonator structure based on arc-shaped electrodes, which comprises a piezoelectric material and a plurality of arc-shaped electrodes; the electrodes in the shape of an arc are arranged on the surface of the piezoelectric material, alternating positive and negative voltages are applied to adjacent electrodes, the distance between the electrodes ranges from 1 to 100 wavelengths, and the wavelengths are determined according to the spacing and the resonant frequency of the electrodes. The resonant frequency of the ultrahigh frequency resonator can reach 6GHz, the requirements of a 5G market can be completely met, and the resonator structure of the ultrahigh frequency resonator can reach more than 40% of ultrahigh electromechanical coupling coefficient.
Description
Technical Field
The invention relates to the field of resonators, in particular to an ultrahigh frequency resonator structure based on arc-shaped electrodes.
Background
In response to the demand for increasingly faster data transmission in wireless mobility, more stringent new specifications for current and future front-end modules have emerged. To meet more stringent specifications while maintaining a smaller form factor requires a high performance filter to select between different operating bands.
As is known, since the 90 s of the 20 th century, Surface Acoustic Wave (SAW) filters based on piezoelectric materials (such as LiNbO3 or LiTaO3) have dominated the market for band-pass filters, but due to the lack of energy constraints, particularly in the vertical direction, their quality factor (Q) is limited, and due to the low phase velocity of rayleigh wave filters, frequencies are difficult to exceed 3GHz, largely impeding its application, while discrete de substrates have provided obstacles for further integration with integrated circuits. In the last decade, aluminum nitride (AlN) films, piezoelectric micro-electromechanical (MEMS) resonators such as Film Bulk Acoustic Resonators (FBAR) and Solid Mounted Resonators (SMR) have been compatible based on Complementary Metal Oxide Semiconductors (CMOS), and because these two resonators have limited energy and the AlN film has a large d33, a very high Q value can be obtained, which lays the foundation for building high performance filters. However, the center frequency of such devices is determined by the film thickness itself, and thus there is a great challenge to realize monolithic multiband integration.
Piezoelectric aluminum nitride MEMS resonators that excite low order symmetric lamb waves of piezoelectric materials using interdigital transducers (IDTs) have been the focus of research for many years. The lamb wave resonator can simultaneously solve the direct integration problem faced by the saw resonator, the low frequency and low Q value limitation and the multi-frequency performance problem faced by the FBAR and the SMR. In the AlN thin film, the S0 mode has high phase velocity, up to 10000m/S, the resonance frequency is easy to exceed 4GHz, good weak phase velocity dispersion can be generated, the temperature frequency coefficient (TCF) is small and the Q value is high (namely, 1000-3000) and the manufacturing process is simple, wherein the temperature frequency coefficient is about 26 ppm/c. Furthermore, conventional AlN lamb wave resonators typically exhibit moderate effective electromechanical coupling coefficients (K is around 3%), which limits their application in filters, since the K value is directly related to the partial Bandwidth (BW) of the filter, determining the insertion loss and profile size. Therefore, optimizing the electrodes in a piezoelectric AlN lamb wave resonator is an ideal way to further implement a large bandwidth, low insertion loss filter.
Furthermore, with the advent and application of 5G, existing resonator structures such as LWR, FBAR, and SMR have difficulty achieving such ultra-high frequency band requirements. Therefore, in order to meet higher demands, the proposal of a novel ultrahigh frequency resonator structure is urgently needed.
Disclosure of Invention
The invention aims to solve the technical problem of providing an ultrahigh frequency resonator structure based on an arc electrode aiming at the defects in the prior art.
The technical scheme adopted by the invention for solving the technical problems is as follows:
the invention provides an ultrahigh frequency resonator structure based on arc-shaped electrodes, which comprises a piezoelectric material and a plurality of arc-shaped electrodes; the electrodes in the shape of an arc are arranged on the surface of the piezoelectric material, alternating positive and negative voltages are applied to adjacent electrodes, the distance between the electrodes ranges from 1 to 100 wavelengths, and the wavelengths are determined according to the spacing and the resonant frequency of the electrodes.
Further, the shape of the electrode of the present invention specifically includes: a circular arc shape having a certain width; the arc-like shape is a broken line shape with a plurality of sections of corners.
Further, all electrodes of the present invention remain uniform in size, or the electrodes do not vary in size.
Further, the angle range of the central angle of the arc-shaped electrode of the present invention is 0 to 180 degrees.
Further, the electrode material of the present invention is a metal material, including: platinum, molybdenum, zinc, aluminum.
Further, the parameters of the present invention that affect the impedance of the electrode include: the position of the electrodes, the distance from the geometric center of the electrodes to the edge of the piezoelectric material, the geometric distance between the two electrodes, and the width of the electrodes.
Further, the piezoelectric material of the present invention includes aluminum nitride, and further includes doped aluminum nitride, PZT, lithium niobate, lithium tantalate, and zinc oxide.
Further, the arrangement mode of the arc-shaped electrodes of the invention comprises:
the open sides of the plurality of arc-shaped electrodes are linearly arranged towards a single direction;
the opening sides of the arc electrodes are linearly arranged towards a plurality of directions;
the arc electrodes are arranged in multiple rows, and the electrodes in each row are arranged on a straight line;
the arc electrodes are arranged in multiple rows, and the electrodes in each row are staggered.
Further, the piezoelectric material is patterned according to the present invention, and the shape thereof includes a polygon or an irregular pattern.
Further, the method for determining the wavelength according to the spacing and the resonant frequency of the electrodes comprises the following steps:
the propagation equation of lamb waves in a piezoelectric material is as follows:
where f is the resonator frequency, v is the phase velocity of the acoustic wave propagation, λ is the acoustic wave wavelength,
in the uhf resonator structure:
p is more than n x lambda, wherein p is the distance between two adjacent electrodes, n is a positive real number, n is more than 1, and a wave with the wavelength lambda smaller than the electrode distance p is excited between the two adjacent electrodes, so that the resonant frequency of the resonator realizes an ultrahigh frequency band; after positive and negative voltages are alternately applied to the upper electrode on the upper surface of the piezoelectric layer, multidirectional electric field coupling can be generated in the piezoelectric layer, e15 and e24 in the piezoelectric layer are coupled through the arrangement mode of the structural electrodes of the ultrahigh frequency resonator, and the adjusting process is as follows:
according to the classical piezoelectric equation:
T＝cS-eE
D＝εE-eS
wherein T is a stress matrix, S is a strain matrix, c is a piezoelectric material rigidity matrix, e is a piezoelectric stress matrix, and epsilon is a piezoelectric material dielectric matrix;
adjusting the electromechanical coupling coefficient of the resonator according to a pressure stress matrix e, wherein the piezoelectric stress matrix is as follows:
wherein e is15、e22、e24、e31、e33Respectively corresponding to the piezoelectric coefficients of the piezoelectric material in all directions;
by coupling e15And e24The piezoelectric coefficients in the two directions couple the electric fields in the two directions, and therefore the large bandwidth of the resonator is achieved.
The invention has the following beneficial effects: the ultrahigh frequency resonator structure based on the arc-shaped electrode has the advantages that the resonance frequency can reach 6GHz, the requirements of the 5G market can be well met, and the ultrahigh electromechanical coupling coefficient of the resonator structure can reach more than 40%.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a resonator structure with circular arc shaped electrodes according to an embodiment of the present invention;
FIG. 2 is a front view of a resonator structure with radiused electrodes according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of several other circular arc electrode array arrangements according to an embodiment of the present invention;
FIG. 4 is another circular arc electrode resonator structure according to an embodiment of the present invention;
FIG. 5 is a multi-corner arc-like resonator structure according to an embodiment of the present invention;
fig. 6 is a graph of the amplitude of a circular arc electrode resonator according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Fig. 1 is a schematic diagram of the structure of the novel uhf resonator of the present invention. As shown in the figure, the upper surface of the piezoelectric material 1 is composed of a positive electrode 2 and a negative electrode 3 which are in an arc shape, and the lower surface of the piezoelectric material has no electrode structure. The positive and negative electrodes are arranged in a staggered manner.
Fig. 2 is a front view of the novel uhf resonator structure of the present invention. As shown in the figure, 2 is the radius of the arc size of the arc-shaped electrode, 2 is the distance p between the centers of two adjacent arcs of the electrode, the range of the distance 2 is 1-500 wavelengths, 3 and 4 are the distances between the electrodes and the edge of the piezoelectric material, 5 is the width of the arc-shaped electrode, 6 is the degree of the center of the arc-shaped electrode, and the range of the angle 6 is 0-180 degrees. Figures 1-6 are all important parameters affecting the performance of the resonator of the present invention.
Figure 3 is a front view of a uhf resonator structure for three different electrode arrangements of the present invention. The radius size 1 of the circular arc electrode, the circle center distance 2 of the adjacent circular arc electrodes in the same row, the distance 3 between the circular arc electrode and the edge of the piezoelectric material and the circle center distance 4 of the two adjacent rows of circular arc electrodes are all important parameters influencing the resonator of the structure, the circle center distances 2 and 4 of the adjacent circular arc electrodes in the structure of the invention are all in the range of 1-100 wavelengths, the distance 3 between the circular arc electrode and the edge of the piezoelectric material is preferably integral multiple of the wavelength, but is not limited to integral multiple of the wavelength, the radius size 1 of the circular arc electrode is related to the frequency band where the required resonator is located, and considering the processing process conditions of the structure, the radius size 1 of the circular arc electrode is preferably larger than 0.3 micrometer; as shown in the figure, the electrodes may be arranged in an array along one direction, or in an array along a plurality of different directions, or in a staggered arrangement.
Fig. 4 is a schematic diagram of another resonator configuration of the present invention. As shown in the figure, the piezoelectric material 1 may be patterned not only in a polygonal shape but also in various irregular patterns such as shapes in the figure.
Fig. 5 is a schematic structural diagram of a multi-corner arc-like electrode resonator according to an embodiment of the invention. As shown in the figure, the electrode structures 1 and 3 with multiple corners and arc-like shapes are arranged on the upper surfaces of the piezoelectric materials 2 and 4.
FIG. 6 is a schematic diagram of the impedance curve of the UHF resonator of FIG. 1 with the series resonant frequency f according to the embodiment of the present inventionsAnd parallel resonant frequency fpThe frequency interval Δ f between them determines the electromechanical coupling coefficient of the resonator
Can be calculated by the following formula:
as shown in fig. 6, the resonant frequency of the uhf resonator can reach 6GHz, which can completely meet the requirements of the 5G market, and the resonator structure of the embodiment of the present invention can reach an ultra-high electromechanical coupling coefficient greater than 40%.
The method for determining the wavelength according to the spacing and the resonant frequency of the electrodes comprises the following steps:
the propagation equation of lamb waves in a piezoelectric material is as follows:
where f is the resonator frequency, v is the phase velocity of the acoustic wave propagation, λ is the acoustic wave wavelength,
in the uhf resonator structure:
p is more than n x lambda, wherein p is the distance between two adjacent electrodes, n is a positive real number, n is more than 1, and a wave with the wavelength lambda smaller than the electrode distance p is excited between the two adjacent electrodes, so that the resonant frequency of the resonator realizes an ultrahigh frequency band; after positive and negative voltages are alternately applied to the upper electrode on the upper surface of the piezoelectric layer, multidirectional electric field coupling can be generated in the piezoelectric layer, e15 and e24 in the piezoelectric layer are coupled through the arrangement mode of the structural electrodes of the ultrahigh frequency resonator, and the adjusting process is as follows:
according to the classical piezoelectric equation:
T＝cS-eE
D＝εE-eS
wherein T is a stress matrix, S is a strain matrix, c is a piezoelectric material rigidity matrix, e is a piezoelectric stress matrix, and epsilon is a piezoelectric material dielectric matrix;
adjusting the electromechanical coupling coefficient of the resonator according to a pressure stress matrix e, wherein the piezoelectric stress matrix is as follows:
wherein e is15、e22、e24、e31、e33Respectively corresponding to the piezoelectric coefficients of the piezoelectric material in all directions;
by coupling e15And e24The piezoelectric coefficients in the two directions couple the electric fields in the two directions, and therefore the large bandwidth of the resonator is achieved.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (10)
1. The ultrahigh frequency resonator structure based on the arc-shaped electrodes is characterized by comprising a piezoelectric material and a plurality of arc-shaped electrodes; the electrodes in the shape of an arc are arranged on the surface of the piezoelectric material, alternating positive and negative voltages are applied to adjacent electrodes, the distance between the electrodes ranges from 1 to 100 wavelengths, and the wavelengths are determined according to the spacing and the resonant frequency of the electrodes.
2. The arc-electrode based uhf resonator structure of claim 1, wherein the shape of the electrode specifically comprises: a circular arc shape having a certain width; the arc-like shape is a broken line shape with a plurality of sections of corners.
3. The arc-electrode based uhf resonator structure of claim 1, wherein all electrodes are uniform in size or are non-uniform in size.
4. The arc-electrode based uhf resonator structure of claim 1, wherein the angular range of the center angle of the arc-electrode is 0-180 degrees.
5. The arc-electrode based uhf resonator structure of claim 1, wherein the electrode material is a metallic material comprising: platinum, molybdenum, zinc, aluminum.
6. The arc electrode based uhf resonator structure of claim 1, wherein the parameters affecting the electrode impedance include: the position of the electrodes, the distance from the geometric center of the electrodes to the edge of the piezoelectric material, the geometric distance between the two electrodes, and the width of the electrodes.
7. The arc electrode based uhf resonator structure of claim 1, wherein the piezoelectric material comprises aluminum nitride, further comprising doped aluminum nitride, PZT, lithium niobate, lithium tantalate, zinc oxide.
8. The arc-electrode based uhf resonator structure of claim 1, wherein the arc-electrodes are arranged in a manner comprising:
the open sides of the plurality of arc-shaped electrodes are linearly arranged towards a single direction;
the opening sides of the arc electrodes are linearly arranged towards a plurality of directions;
the arc electrodes are arranged in multiple rows, and the electrodes in each row are arranged on a straight line;
the arc electrodes are arranged in multiple rows, and the electrodes in each row are staggered.
9. The arc electrode based uhf resonator structure of claim 1, wherein the piezoelectric material is patterned to have a shape comprising a polygon or an irregular pattern.
10. The arc-shaped electrode-based uhf resonator structure of claim 1, wherein the wavelength is determined according to the electrode spacing and the resonant frequency by:
the propagation equation of lamb waves in a piezoelectric material is as follows:
where f is the resonator frequency, v is the phase velocity of the acoustic wave propagation, λ is the acoustic wave wavelength,
in the uhf resonator structure:
p is more than n x lambda, wherein p is the distance between two adjacent electrodes, n is a positive real number, n is more than 1, and a wave with the wavelength lambda smaller than the electrode distance p is excited between the two adjacent electrodes, so that the resonant frequency of the resonator realizes an ultrahigh frequency band; after positive and negative voltages are alternately applied to the upper electrode on the upper surface of the piezoelectric layer, multidirectional electric field coupling can be generated in the piezoelectric layer, e15 and e24 in the piezoelectric layer are coupled through the arrangement mode of the structural electrodes of the ultrahigh frequency resonator, and the adjusting process is as follows:
according to the classical piezoelectric equation:
T＝cS-eE
D＝εE-eS
wherein T is a stress matrix, S is a strain matrix, c is a piezoelectric material rigidity matrix, e is a piezoelectric stress matrix, and epsilon is a piezoelectric material dielectric matrix;
adjusting the electromechanical coupling coefficient of the resonator according to a pressure stress matrix e, wherein the piezoelectric stress matrix is as follows:
wherein e is15、e22、e24、e31、e33Respectively corresponding to the piezoelectric coefficients of the piezoelectric material in all directions;
by coupling e15And e24The piezoelectric coefficients in the two directions couple the electric fields in the two directions, and therefore the large bandwidth of the resonator is achieved.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112039476A (en) * | 2020-03-17 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment |
| CN112865744A (en) * | 2021-01-11 | 2021-05-28 | 武汉大学 | Bandwidth adjusting method based on ultra-high bandwidth acoustic wave resonator |
| CN113676149A (en) * | 2021-08-26 | 2021-11-19 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave device and preparation method thereof |
| CN113839643A (en) * | 2021-09-27 | 2021-12-24 | 武汉敏声新技术有限公司 | Transverse excitation bulk acoustic wave resonator and filter |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112039476A (en) * | 2020-03-17 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment |
| WO2021184863A1 (en) * | 2020-03-17 | 2021-09-23 | 中芯集成电路（宁波）有限公司 | Film bulk acoustic resonator and manufacturing method therefor, filter, and electronic device |
| CN112039476B (en) * | 2020-03-17 | 2024-03-12 | 中芯集成电路（宁波）有限公司 | Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment |
| CN112865744A (en) * | 2021-01-11 | 2021-05-28 | 武汉大学 | Bandwidth adjusting method based on ultra-high bandwidth acoustic wave resonator |
| CN113676149A (en) * | 2021-08-26 | 2021-11-19 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave device and preparation method thereof |
| CN113676149B (en) * | 2021-08-26 | 2023-11-21 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave device and preparation method thereof |
| CN113839643A (en) * | 2021-09-27 | 2021-12-24 | 武汉敏声新技术有限公司 | Transverse excitation bulk acoustic wave resonator and filter |
| CN113839643B (en) * | 2021-09-27 | 2024-04-26 | 武汉敏声新技术有限公司 | Transverse excitation bulk acoustic wave resonator and filter |
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