CN113676150A - Lamb wave device and preparation method thereof - Google Patents
Lamb wave device and preparation method thereof Download PDFInfo
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- CN113676150A CN113676150A CN202110987508.5A CN202110987508A CN113676150A CN 113676150 A CN113676150 A CN 113676150A CN 202110987508 A CN202110987508 A CN 202110987508A CN 113676150 A CN113676150 A CN 113676150A
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- 235000019687 Lamb Nutrition 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 20
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 11
- 238000001465 metallisation Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 46
- 230000004044 response Effects 0.000 description 11
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to the technical field of microelectronic devices, and discloses a lamb wave device and a preparation method thereof. The lamb wave device comprises a supporting substrate, a Bragg reflecting layer, a piezoelectric film and an interdigital electrode structure which are sequentially arranged from bottom to top; the Bragg reflection layer comprises a low acoustic impedance layer and a high acoustic impedance layer which are alternately laminated; the interdigital electrode structure comprises a first bus, a second bus, a first interdigital electrode and a second interdigital electrode; the first end of the first bus is opposite to the first end of the second bus, and a preset distance exists between the first end of the first bus and the first end of the second bus; the first interdigital electrode is arranged on the first bus; the second interdigital electrode is arranged on the second bus; the shape of the first interdigital electrode and the shape of the second interdigital electrode are arc-shaped.
Description
Technical Field
The invention relates to the technical field of microelectronic devices, in particular to a lamb wave device and a preparation method thereof.
Background
With the development of mobile communication technology, the frequency band of electromagnetic waves used in the 5G era will continue to develop towards high frequency and large bandwidth.
The lamb wave device in the prior art can utilize a plate wave mode with higher sound velocity and larger electromechanical coupling coefficient in a piezoelectric thin plate, can prepare an acoustic filter with high frequency and large bandwidth, and therefore has attracted wide attention. However, in the lamb wave device in the prior art, there still exists a large response of spurious modes (such as a zero-order horizontal shear wave, a zero-order symmetric lamb wave and a high-order response thereof), which further affects a main mode (such as a first-order antisymmetric lamb wave), and thus a target acoustic mode cannot be realized better.
Disclosure of Invention
The invention aims to solve the technical problem that the lamb wave device in the prior art is large in stray mode response.
In order to solve the technical problem, the application discloses a lamb wave device on one hand, which comprises a supporting substrate, a Bragg reflecting layer, a piezoelectric film and an interdigital electrode structure which are sequentially arranged from bottom to top;
the Bragg reflection layer comprises a low acoustic impedance layer and a high acoustic impedance layer which are alternately laminated;
the interdigital electrode structure comprises a first bus, a second bus, a first interdigital electrode and a second interdigital electrode;
the first end of the first bus is opposite to the first end of the second bus, and a preset distance exists between the first end of the first bus and the first end of the second bus;
the first interdigital electrode is arranged on the first bus;
the second interdigital electrode is arranged on the second bus;
the shape of the first interdigital electrode and the shape of the second interdigital electrode are arc-shaped.
Optionally, the first interdigital electrode comprises at least two upper interdigital electrodes arranged at intervals;
the second interdigital electrode comprises at least two lower interdigital electrodes which are arranged at intervals;
the lower interdigital electrode is arranged between two adjacent upper interdigital electrodes;
the distances between the adjacent upper interdigital electrodes and the lower interdigital electrodes are equal.
Optionally, the first interdigital electrode comprises a first upper interdigital electrode and a second upper interdigital electrode;
the first upper interdigital electrode is arranged at the first end of the first bus, and the first upper interdigital electrode is in a ring shape; the second upper interdigital electrode is in the shape of a ring with an opening, and the opening of the second upper interdigital electrode forms a channel for placing the second bus;
the diameter of the second upper interdigital electrode is larger than that of the first upper interdigital electrode, and the first upper interdigital electrode is positioned in the second upper interdigital electrode;
the second interdigital electrode comprises a first lower interdigital electrode and a second lower interdigital electrode;
the first lower interdigital electrode is arranged at the first end of the second bus, the shape of the first lower interdigital electrode and the shape of the second lower interdigital electrode are circular rings with openings, and the openings of the first lower interdigital electrode and the second lower interdigital electrode form a channel for placing the first bus;
the diameter of the second lower interdigital electrode is larger than that of the first lower interdigital electrode, and the first lower interdigital electrode is positioned in the second lower interdigital electrode;
the first lower interdigital electrode is located between the first upper interdigital electrode and the second upper interdigital electrode.
Optionally, the thickness of the piezoelectric film is less than 0.5p, where p is a distance between the upper interdigital electrode and the lower interdigital electrode that are adjacent to each other.
Optionally, the crystal cut of the piezoelectric film is Z cut;
the material of the piezoelectric film comprises lithium niobate or lithium tantalate.
Optionally, two grooves are formed in the piezoelectric film at intervals, and the first interdigital electrode is arranged in one groove; the second interdigital electrode is arranged in the other groove.
Optionally, the device further comprises a dielectric layer;
the dielectric layer is located between the substrate and the piezoelectric film, or the dielectric layer is located on the interdigital electrode structure.
Optionally, the metallization rate of the first interdigital electrode is less than 35%, and/or the metallization rate of the second interdigital electrode is less than 35%.
Optionally, the material of the supporting substrate includes at least one of Silicon, Silicon oxide-Silicon, Silicon-On-Insulator (SOI), germanium, quartz, sapphire, lithium niobate, and lithium tantalate;
the material of the first interdigital electrode comprises at least one metal material of aluminum, tungsten, chromium, titanium, copper, silver and gold;
the material of the second interdigital electrode comprises at least one metal material of aluminum, tungsten, chromium, titanium, copper, silver and gold.
The application also discloses a preparation method of the lamb wave device on the other hand, which comprises the following steps:
providing a piezoelectric thin film structure, wherein the piezoelectric thin film structure comprises a support substrate, a Bragg reflection layer and a piezoelectric thin film which are sequentially arranged from bottom to top; the Bragg reflection layer comprises a low acoustic impedance layer and a high acoustic impedance layer which are alternately laminated;
preparing an interdigital electrode structure on the piezoelectric film to obtain the lamb wave device, wherein the interdigital electrode structure comprises a first bus, a second bus, a first interdigital electrode and a second interdigital electrode; the first end of the first bus is opposite to the first end of the second bus, and a preset distance exists between the first end of the first bus and the first end of the second bus; the first interdigital electrode is arranged on the first bus; the second interdigital electrode is arranged on the second bus; the shape of the first interdigital electrode and the shape of the second interdigital electrode are arc-shaped.
By adopting the technical scheme, the lamb wave device provided by the application has the following beneficial effects:
the lamb wave device comprises a supporting substrate, a Bragg reflecting layer, a piezoelectric film and an interdigital electrode structure which are sequentially arranged from bottom to top; the Bragg reflection layer comprises a low acoustic impedance layer and a high acoustic impedance layer which are alternately laminated; the interdigital electrode structure comprises a first bus, a second bus, a first interdigital electrode and a second interdigital electrode; the first end of the first bus is opposite to the first end of the second bus, and a preset distance exists between the first end of the first bus and the first end of the second bus; the first interdigital electrode is arranged on the first bus; the second interdigital electrode is arranged on the second bus; the shape of the first interdigital electrode and the shape of the second interdigital electrode are arc-shaped. Therefore, the lamb wave device not only can effectively obtain a mode of a high-order lamb wave, but also can effectively inhibit the response of other stray modes (such as a zero-order horizontal shear wave, a zero-order symmetric lamb wave and a longitudinal high-order mode thereof), and effectively improves the Q value of a target acoustic mode.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a lamb wave device according to an alternative embodiment of the present application;
FIG. 2 is a graph showing the relationship between the propagation direction of waves in the piezoelectric film plane and the phase velocity in three acoustic wave modes;
FIG. 3 is a graph showing the relationship between the propagation direction of the corresponding waves in the piezoelectric film plane and the electromechanical coupling coefficient in three acoustic wave modes;
FIG. 4 is a top view of an alternative lamb wave device of the present application;
FIG. 5 is a top view of another alternative lamb wave device of the present application;
FIG. 6 is a cross-sectional view of an alternative lamb wave device of the present application;
FIG. 7 is a graph comparing performance curves for different lamb wave devices provided herein;
fig. 8 is a schematic diagram of a linear interdigital electrode structure.
The following is a supplementary description of the drawings:
1-a support substrate; 2-bragg reflector layer; 21-a low acoustic impedance layer; 22-high acoustic impedance layer; 3-a piezoelectric film; 4-interdigital electrode structure; 41-a first bus; 42-a second bus; 43-a first interdigitated electrode; 431-a first upper interdigitated electrode; 432-a second upper interdigitated electrode; 44-a second interdigitated electrode; 441-first lower interdigital electrode; 442-a second lower interdigitated electrode; 5, etching the through hole; 6-hole; 7-a bus bar; 8-groove.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. In the description of the present application, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a lamb wave device according to an alternative embodiment of the present application. FIG. 1 is a cross-sectional view of an alternative lamb wave device of the present application; fig. 1 (b) is a top view of an alternative lamb wave device of the present application. The application discloses a lamb wave device on one hand, which comprises a supporting substrate 1, a Bragg reflecting layer 2, a piezoelectric film 3 and an interdigital electrode structure 4 which are sequentially arranged from bottom to top; the bragg reflection layer 2 includes low acoustic impedance layers 21 and high acoustic impedance layers 22 alternately laminated; the interdigital electrode structure 4 comprises a first bus line 41, a second bus line 42, a first interdigital electrode 43 and a second interdigital electrode 44; the first end of the first bus 41 is opposite to the first end of the second bus 42, and has a preset distance; the first interdigital electrode 43 is disposed on the first bus line 41; the second interdigital electrode 44 is disposed on the second bus 42; the shape of the first interdigital electrode 43 and the shape of the second interdigital electrode 44 are arc-shaped; thereby achieving the effect of suppressing spurious modes.
In an alternative embodiment, the crystal cut of the piezoelectric film 3 is Z-cut; the material of the piezoelectric film 3 includes lithium niobate or lithium tantalate so that the phase velocity and the electromechanical coupling coefficient of the wave excited by the piezoelectric film 3 in each propagation direction of the piezoelectric film 3 are constant.
Optionally, the lamb wave device provided by the application excites a first-order antisymmetric lamb wave, i.e. a1 mode, in the piezoelectric film 3 mainly through the interdigital electrodes; however, in practice, there are responses of the zeroth order horizontal shear wave (SH0) and the zeroth order symmetric lamb wave (S0) in the piezoelectric film 3, and these two modes and their high-order modes induced in the propagation direction act as spurious wave modes, thereby affecting the "clean" degree of the a1 mode response.
Optionally, the material of the piezoelectric film 3 in this embodiment is lithium niobate; the crystal cut of the piezoelectric film 3 is Z cut; referring to fig. 2 and 3, fig. 2 is a graph showing a relationship between a propagation direction of a wave in a piezoelectric film plane and a phase velocity corresponding to three acoustic wave modes; fig. 3 is a curve of the relationship between the propagation direction of the corresponding wave in the plane of the piezoelectric film and the electromechanical coupling coefficient in three acoustic wave modes. As can be seen from fig. 2, the phase velocity Vp of the a1 mode excited by the Z-cut lithium niobate piezoelectric thin film 3 in each propagation direction in the plane is constant (i.e., the slow curve is circular) and is constant at 43 km/s; correspondingly, the SH0 mode and the S0 mode are continuously changed; and as can be seen from fig. 3, the electromechanical coupling coefficient of the a1 mode is also constant in each propagation direction, i.e., 38%, which means that the resonant frequency and the anti-resonant frequency of the a1 mode excited in any in-plane direction of the Z-cut LN or LT are the same. However, the electromechanical coupling coefficients of the SH0 mode and the S0 mode are constantly changing, so that an appropriate in-plane propagation direction (i.e., abscissa) cannot be selected so that the electromechanical coupling coefficients of the two main spurious modes are both 0, and the Q value of the response target acoustics is greatly influenced.
When the lamb wave device provided by the present application is used, since the interdigital electrode structure 4 is the structure shown in the diagram (b) in fig. 1, that is, the arc-shaped structure, the response obtained by the interdigital electrode structure 4 can be approximately regarded as the average value of the resonator responses in all in-plane directions. Since the SH0 and S0 stray modes and the high-order modes thereof have anisotropy in different in-plane transmission directions (namely, the sound velocity and the electromechanical coupling coefficient are different), the effect of reducing the average value of the stray mode energy can be achieved, and the good effect of inhibition is achieved.
It should be noted that the main mode is not limited to the first-order antisymmetric lamb wave, but may be other high-order lamb waves, such as second-order, third-order, fourth-order or n-order lamb waves, where n is a natural number greater than or equal to 5; optionally, when the lamb wave device has the structure shown in fig. 1, it can excite first order, third order or (2m +1) order, and m is a natural number greater than or equal to 2; in an alternative embodiment, the lamb wave device further comprises a dielectric layer; the dielectric layer is located between the substrate and the piezoelectric film 3, optionally, the dielectric layer is located on the interdigital electrode structure 4, optionally, the area of the dielectric layer may be equal to the area of the interdigital electrode structure 4, and the dielectric layer may be larger than the interdigital electrode structure 4, so that the dielectric layer is partially located on the piezoelectric film 3; the lamb wave device can excite second-order, third-order, fourth-order or n-order lamb waves, and n is a natural number which is greater than or equal to 5.
Optionally, the material of the dielectric layer includes c-axis oriented aluminum nitride, silicon oxide, silicon nitride, aluminum oxide, or the like. The dielectric layer can adjust the frequency of the device, improve the frequency temperature coefficient and other properties. It should be noted that other inorganic materials may be selected for the dielectric layer as long as the piezoelectric acoustic characteristics of the target mode are ensured to be isotropic in the plane of the piezoelectric thin film 3 and the dielectric layer.
In an alternative embodiment, referring to FIG. 4, FIG. 4 is a top view of an alternative lamb wave device of the present application. The first interdigital electrode 43 includes at least two upper interdigital electrodes disposed at intervals; the second interdigital electrode 44 includes at least two lower interdigital electrodes arranged at intervals; the lower interdigital electrode is arranged between two adjacent upper interdigital electrodes; the distances between the adjacent upper interdigital electrodes and the lower interdigital electrodes are equal, so that the effect of suppressing the stray mode can be realized.
To increase the application flexibility of the lamb wave device of the present application and to suppress the effect of spurious modes, in an alternative embodiment, referring to fig. 4, the first interdigital electrode 43 comprises a first upper interdigital electrode 431 and a second upper interdigital electrode 432; the first upper interdigital electrode 431 is disposed at the first end of the first bus line 41, and the shape of the first upper interdigital electrode 431 is a circular ring; the second upper interdigital electrode 432 is shaped like a circular ring having an opening, and the opening of the second upper interdigital electrode 432 forms a channel in which the second bus line 42 is placed; the diameter of the second upper interdigital electrode 432 is larger than that of the first upper interdigital electrode 431, and the first upper interdigital electrode 431 is located within the second upper interdigital electrode 432; the second interdigital electrode 44 includes a first lower interdigital electrode 441 and a second lower interdigital electrode 442; the first lower interdigital electrode 441 is disposed at the first end of the second bus line 42, and the shape of the first lower interdigital electrode 441 and the shape of the second lower interdigital electrode 442 are circular rings having openings, and the openings of the first lower interdigital electrode 441 and the openings of the second lower interdigital electrode 442 form a channel for placing the first bus line 41; the diameter of the second lower interdigital electrode 442 is larger than the diameter of the first lower interdigital electrode 441, and the first lower interdigital electrode 441 is located within the second lower interdigital electrode 442; the first lower interdigital electrode 441 is located between the first upper interdigital electrode 431 and the second upper interdigital electrode 432; the first upper interdigital electrode 431, the second upper interdigital electrode 432, the first lower interdigital electrode 441 and the second lower interdigital electrode 442 are concentric; the technical scheme that the interdigital electrode structure 4 is a circular ring structure can effectively enhance the effect of restraining a stray mode.
It should be noted that the first bus line 41 and the second bus line 42 may be located on the same straight line, or may have a preset distance in the transverse direction, as long as the preset distance exists at the top of the bus line, and the plurality of first interdigital electrodes 43 and the plurality of second interdigital electrodes 44 can be arranged in a staggered manner; the interdigital electrodes can be arc-shaped, arc-shaped or circular, the circular ring shape can be closed or provided with an opening, generally, the interdigital electrode positioned at the innermost side can be a closed circular ring, while the other interdigital electrodes need to be circular rings provided with openings, the size of the opening can be set according to the needs, and the limitation is not made herein; the opening may be designed according to the width of the first bus 41 and the second bus 42.
In an alternative embodiment, referring to fig. 4, the thickness of the piezoelectric film 3 is less than 0.5p, where p is the distance between the adjacent upper interdigital electrode and the lower interdigital electrode, and when the interdigital electrodes are circular rings, each upper interdigital electrode and each lower interdigital electrode are concentric, so that the distance p between the adjacent upper interdigital electrode and the lower interdigital electrode in the radial direction is equal; alternatively, p may also be a distance between the center line of the adjacent upper interdigital electrode and the center line of the lower interdigital electrode; alternatively, p may also be a distance between a side of an upper interdigital electrode and a side of a lower interdigital electrode that are adjacent to each other. It should be noted that when p is too small, the horizontal component of the wave energy is too large, resulting in poor energy constraint effect and small electromechanical coupling coefficient; and too large p can result in an oversized device. Optionally, the energy confinement effect of the device is improved on the basis of ensuring the appropriate size of the device. The thickness h of the piezoelectric film 3 can satisfy the relation: 0.2p < h <0.45 p.
To further suppress or eliminate spurious modes in the device, in an alternative embodiment, referring to FIG. 5, FIG. 5 is a top view of another alternative lamb wave device of the present application; an etched through hole 5 is formed in the middle of the piezoelectric film 3, and an area of the piezoelectric film 3 which is not related to the excitation area can be set as a hole 6.
To further improve the power capability of the device and suppress spurious modes, in an alternative embodiment, referring to fig. 6, fig. 6 is a cross-sectional view of an alternative lamb wave device of the present application. Two grooves 8 are arranged on the piezoelectric film 3 at intervals, and the first interdigital electrode 43 is arranged in one groove 8; the second interdigital electrode 44 is arranged in the other groove 8; of course, the grooves 8 may be correspondingly arranged according to the number of the first interdigital electrodes 43 and the second interdigital electrodes 44;
alternatively, the method for preparing the interdigital electrode in fig. 6 can be as follows: the piezoelectric film 3 is etched in advance to form a plurality of grooves 8, and then the grooves are partially or completely embedded in a metal deposition mode; wherein, the partial embedding is characterized in that the height of the interdigital electrode is greater than the depth of the groove 8, for example, the depth of the groove 8 is 80 nm, and the height of the interdigital electrode is 130 nm; the total embedding is realized by that the height of the interdigital electrode is less than or equal to the depth of the groove 8, for example, the depth of the groove 8 is 200 nm, and the height of the interdigital electrode is 120 nm.
Alternatively, referring to fig. 5, the interdigital electrode further includes two bus bars 7, the first bus bar 41 is connected to one bus bar 7, and the second bus bar 42 is connected to the other bus bar 7, and the bus bars 7 may be disposed at any position of the piezoelectric film 3 according to the need, and are not limited to the positional relationship in fig. 5, for example, the two bus bars 7 may be located on the same straight line on the same side, and may be disposed at any one of four corners of the piezoelectric film 3.
Optionally, the high acoustic impedance layer 22 of the bragg reflector 2 has a high material density or a large elastic constant, or both of them, for example, aluminum nitride, tungsten, or platinum; the low acoustic impedance layer 21 has a low material density, a small elastic constant, or both, for example, a material such as silicon dioxide or a high polymer.
Considering that too few reflecting layers do not confine most of the acoustic energy in the resonant structure, optionally, the sum of the numbers of layers of the high acoustic impedance layer 22 and the low acoustic impedance layer 21 is equal to or greater than 5; optionally, a low acoustic impedance layer 21 is connected to the piezoelectric film 3.
Optionally, the bragg reflector 2 corresponds to a region of the interdigital electrode structure 4 as needed, that is, the areas of the top views of the two are equal; optionally, the width of the bragg reflector 2 may also be larger than the corresponding area of the interdigital electrode structure 4, which is not limited herein.
In order to more efficiently excite the a1 mode and reduce the response of the stray waves, in an alternative embodiment, the metallization ratio of the first interdigital electrode 43 and the second interdigital electrode 44 is less than 30%; in order to further ensure that the ohmic loss of the device is not large, the metallization ratios η of the first interdigital electrode 43 and the second interdigital electrode 44 optionally satisfy the following relationship, 10% < η < 26%.
In an alternative embodiment, the material of the support substrate 1 includes at least one of Silicon, Silicon oxide-Silicon, Silicon-On-Insulator (SOI), germanium, quartz, sapphire, lithium niobate, and lithium tantalate; the material of the first interdigital electrode 43 includes at least one metal material selected from aluminum, tungsten, chromium, titanium, copper, silver, and gold; the material of the second interdigital electrode 44 includes at least one metal material selected from the group consisting of aluminum, tungsten, chromium, titanium, copper, silver, and gold.
It should be noted that the lamb wave device can be applied to an elastic wave filter, a resonator, a duplexer, or a multiplexer; the elastic wave filter and the duplexer are mainly constructed by cascading a plurality of elastic wave resonators, the aperture widths, the logarithm, the arrangement modes and other factors of the interdigital electrodes with different sizes and shapes can affect the capacitance of the resonators, and the adjustment of the capacitance of the resonators can be realized by adjusting the circumferential angles of the first interdigital electrode 43 and the second interdigital electrode 44 subsequently, so that the subsequent construction of the elastic wave filter and the duplexer is facilitated.
In order to better embody the solution and the advantages of the present application, the following description is made with reference to fig. 7, and fig. 7 is a graph comparing performance curves of different lamb wave devices provided by the present application. The structure of the lamb wave device corresponding to example 1 in the figure is as follows: by adopting the interdigital electrode structure 4 shown in fig. 4, the layer structure of the lamb wave device is shown in fig. 1, the material of the supporting substrate 1 is silicon, the total number of layers of the bragg reflection layer 2 is 14, the material of the high acoustic impedance layer 22 is aluminum nitride, and the thickness is 540 nm; the material of the low acoustic impedance layer 21 is silicon dioxide, and the thickness thereof is 260 nm; the piezoelectric film 3 is a Z-cut lithium niobate wafer and has a thickness of 500 nm; the metallization rate of the first bus line 41, the second bus line 42, the first interdigital electrode 43 and the second interdigital electrode 44 is 25%, and the pitch p between the adjacent upper interdigital electrodes and the lower interdigital electrodes is 5 micrometers; the bus bar 7 is aluminum and has a thickness of 200 nm; the circumference of the first interdigital electrode 43 and the second interdigital electrode 44 is defined by the radius of the position where the electrodes are located and the size of the circumferential angle.
The structure of the lamb wave device corresponding to the comparative example 1 is as follows: the interdigital electrode structure 4 in example 1 is replaced by a linear interdigital electrode structure, as shown in fig. 8, and fig. 8 is a schematic view of the linear interdigital electrode structure. The rest of the structure was the same as in example 1.
The structure of the lamb wave device corresponding to the comparative example 2 is: the piezoelectric film 3 cut in example 1 was replaced with YX128 ° (euler angles of [0, -38 °,0]), and the interdigital electrode was linear, and the rest of the structure was the same as in example 1.
The structure of the lamb wave device corresponding to the comparative example 3 is as follows: the piezoelectric film 3 cut in example 1 was replaced with YX128 ° (Euler angles of [0, -38 °,0]), and the rest of the structure was the same as in example 1.
As can be seen from fig. 7, the resonance and the anti-resonance frequency of comparative example 1 and example 1 almost coincide, and it can be illustrated that the a1 mode of Z-cut lithium niobate has the characteristic of isotropy in the plane of the piezoelectric thin film 3; and it can be seen from fig. 7 that in example 1, compared with comparative example 1, the admittance ratios of the resonance and the anti-resonance are almost the same, and part of the stray mode in example 1 is suppressed (see the positions corresponding to the frequencies of 3.63GHZ and 3.8GHZ in fig. 7), so that it can be effectively demonstrated that the arc-shaped interdigital electrode structure of the present application has the effect of suppressing the stray mode compared with the conventional linear interdigital structure.
Similarly, comparing the positions corresponding to the frequencies of 3.63GHZ and 3.8GHZ in fig. 7, it can be seen that the a1 mode excited by comparative examples 2 and 3 is more disordered than that of example 1, which indicates that the lamb wave device having the Z-cut lithium niobate piezoelectric film 3 and the arc-shaped interdigital electrode structure has a better main mode response and a stray mode suppression effect than the lamb wave device having the other cut piezoelectric film 3 and the arc-shaped interdigital electrode structure.
The application also discloses a preparation method of the lamb wave device on the other hand, which comprises the following steps: providing a piezoelectric film 3 structure, wherein the piezoelectric film 3 structure comprises a support substrate 1, a Bragg reflection layer 2 and a piezoelectric film 3 which are sequentially arranged from bottom to top; the bragg reflection layer 2 includes low acoustic impedance layers 21 and high acoustic impedance layers 22 alternately laminated; preparing an interdigital electrode structure 4 on the piezoelectric film 3 to obtain the lamb wave device, wherein the interdigital electrode structure 4 comprises a first bus 41, a second bus 42, a first interdigital electrode 43 and a second interdigital electrode 44; the first end of the first bus 41 is opposite to the first end of the second bus 42, and has a preset distance; the first interdigital electrode 43 is disposed on the first bus line 41; the second interdigital electrode 44 is disposed on the second bus 42; the shape of the first interdigital electrode 43 and the shape of the second interdigital electrode 44 are arc-shaped; the first interdigital electrode 43 and the second interdigital electrode 44 are equidistant.
Alternatively, the process of preparing the interdigital electrode structure 4 on the piezoelectric film 3 can be specifically described as follows: firstly, coating photoresist on the piezoelectric film 3, then carrying out patterning treatment on the photoresist, then preparing the interdigital electrode structure 4 by adopting an evaporation or sputtering mode, and then removing photoresist residues; other deposition or combination of etching and deposition may also be used, and is not limited herein.
The lamb wave device manufactured by the method for manufacturing the lamb wave device can generate an effective A1 mode, the phase velocity and the electromechanical coupling coefficient of the wave excited by the piezoelectric film 3 in each propagation direction of the piezoelectric film 3 are constant values, and the effect of suppressing a stray mode can be achieved due to the electrode structure.
It should be noted that other optional processes for manufacturing a lamb wave device provided in the present application may refer to the above embodiments of the lamb wave device structure, and are not described herein again.
The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A lamb wave device is characterized by comprising a supporting substrate (1), a Bragg reflecting layer (2), a piezoelectric film (3) and an interdigital electrode structure (4) which are sequentially arranged from bottom to top;
the Bragg reflection layer (2) comprises a low acoustic impedance layer (21) and a high acoustic impedance layer (22) which are alternately laminated;
the interdigital electrode structure (4) comprises a first bus line (41), a second bus line (42), a first interdigital electrode (43), and a second interdigital electrode (44);
the first end of the first bus (41) is opposite to the first end of the second bus (42) and has a preset distance;
the first interdigital electrode (43) is arranged on the first bus line (41);
the second interdigital electrode (44) is arranged on the second bus bar (42);
the shape of the first interdigital electrode (43) and the shape of the second interdigital electrode (44) are arc-shaped.
2. A lamb wave device according to claim 1, characterised in that the first interdigital electrode (43) comprises at least two upper interdigital electrodes arranged at intervals;
the second interdigital electrode (44) comprises at least two lower interdigital electrodes which are arranged at intervals;
one lower interdigital electrode is arranged between two adjacent upper interdigital electrodes;
the distances between the adjacent upper interdigital electrodes and the lower interdigital electrodes are equal.
3. The lamb wave device of claim 2, wherein said first interdigital electrode (43) comprises a first upper interdigital electrode (431) and a second upper interdigital electrode (432);
the first upper interdigital electrode (431) is arranged at the first end of the first bus (41), and the shape of the first upper interdigital electrode (431) is a circular ring; the second upper interdigital electrode (432) is shaped as a circular ring having an opening, and the opening of the second upper interdigital electrode (432) forms a channel in which the second bus line (42) is placed;
the diameter of the second upper interdigital electrode (432) is larger than the diameter of the first upper interdigital electrode (431), and the first upper interdigital electrode (431) is located within the second upper interdigital electrode (432);
the second interdigital electrode (44) includes a first lower interdigital electrode (441) and a second lower interdigital electrode (442);
the first lower interdigital electrode (441) is disposed at a first end of the second bus line (42), and the shape of the first lower interdigital electrode (441) and the shape of the second lower interdigital electrode (442) are circular rings having openings, and the openings of the first lower interdigital electrode (441) and the openings of the second lower interdigital electrode (442) form channels for placing the first bus line (41);
the second lower interdigital electrode (442) has a diameter larger than that of the first lower interdigital electrode (441), and the first lower interdigital electrode (441) is located within the second lower interdigital electrode (442);
the first lower interdigital electrode (441) is located between the first upper interdigital electrode (431) and a second upper interdigital electrode (432);
the first upper interdigital electrode (431), the second upper interdigital electrode (432), the first lower interdigital electrode (441), and the second lower interdigital electrode (442) are concentric.
4. A lamb wave device according to claim 2, characterised in that the thickness of the piezoelectric film (3) is less than 0.5p, said p being the distance between the adjacent upper and lower interdigital electrodes.
5. A lamb wave device according to claim 1, characterised in that the crystal cut of the piezoelectric film (3) is Z-cut;
the material of the piezoelectric film (3) comprises lithium niobate or lithium tantalate.
6. A lamb wave device according to claim 1, characterised in that the piezoelectric film (3) is provided with two grooves (8) arranged at intervals, one of the grooves (8) being provided with the first interdigital electrode (43); the second interdigital electrode (44) is arranged in the other groove (8).
7. The lamb wave device of claim 1, further comprising a dielectric layer;
the dielectric layer is located between the substrate and the piezoelectric film (3), or the dielectric layer is located on the interdigital electrode structure (4).
8. Lamb wave device according to claim 4, characterized in that the metallization ratio of the first interdigital electrode (43) is less than 35% and/or the metallization ratio of the second interdigital electrode (44) is less than 35%.
9. The lamb wave device according to claim 1, wherein the material of the support substrate (1) comprises at least one of Silicon, Silicon oxide-Silicon, Silicon-On-Insulator (SOI), germanium, quartz, sapphire, lithium niobate, lithium tantalate;
the material of the first interdigital electrode (43) comprises at least one metal material of aluminum, tungsten, chromium, titanium, copper, silver and gold;
the material of the second interdigital electrode (44) comprises at least one metal material selected from aluminum, tungsten, chromium, titanium, copper, silver and gold.
10. A method for manufacturing a lamb wave device is characterized by comprising the following steps:
providing a piezoelectric film (3) structure, wherein the piezoelectric film (3) structure comprises a supporting substrate (1), a Bragg reflecting layer (2) and the piezoelectric film (3) which are sequentially arranged from bottom to top; the Bragg reflection layer (2) comprises a low acoustic impedance layer (21) and a high acoustic impedance layer (22) which are alternately laminated;
preparing an interdigital electrode structure (4) on the piezoelectric film (3) to obtain the lamb wave device, wherein the interdigital electrode structure (4) comprises a first bus (41), a second bus (42), a first interdigital electrode (43) and a second interdigital electrode (44); the first end of the first bus (41) is opposite to the first end of the second bus (42) and has a preset distance; the first interdigital electrode (43) is arranged on the first bus line (41); the second interdigital electrode (44) is arranged on the second bus bar (42); the shape of the first interdigital electrode (43) and the shape of the second interdigital electrode (44) are arc-shaped.
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| CN114301412A (en) * | 2021-12-29 | 2022-04-08 | 苏州达波新材科技有限公司 | Lamb wave acoustic wave device with improved substrate structure and manufacturing method thereof |
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