CN118039545A - Wafer adsorption method - Google Patents
Wafer adsorption method Download PDFInfo
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- CN118039545A CN118039545A CN202211357772.1A CN202211357772A CN118039545A CN 118039545 A CN118039545 A CN 118039545A CN 202211357772 A CN202211357772 A CN 202211357772A CN 118039545 A CN118039545 A CN 118039545A
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- wafer
- line
- blowing
- gas
- air
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000001179 sorption measurement Methods 0.000 title abstract description 14
- 238000007664 blowing Methods 0.000 claims abstract description 94
- 238000004140 cleaning Methods 0.000 claims description 31
- 238000001035 drying Methods 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims description 3
- 238000010926 purge Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 164
- 239000007789 gas Substances 0.000 description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000000227 grinding Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a wafer adsorption method, which is particularly suitable for adsorbing a warped wafer. The wafer is placed on the bearing surface of the bearing plate, and the lower surface of the wafer faces the bearing surface of the bearing plate. The air blowing pipeline blows out air blowing air flow towards the upper surface of the wafer, and negative pressure is formed on the bearing surface of the bearing plate through the air sucking pipeline so as to adsorb the wafer on the bearing surface of the bearing plate. The air blowing air flow can apply pressure to the upper surface of the wafer so as to reduce the space between the lower surface of the wafer and the bearing surface of the bearing plate and the air suction pipeline, and is beneficial to adsorbing and fixing the wafer on the bearing surface of the bearing plate through the air suction pipeline.
Description
Technical Field
The present invention relates to a wafer suction method, and more particularly, to a suction method for sucking a warped wafer.
Background
Advanced semiconductor chip processes typically include a stack of layers of different materials, where the different coefficients of thermal expansion (coefficient of thermal expansion, CTE) of the layers of materials often result in warpage (warpage) of the wafer. In addition, stress and warpage may also be generated during the back grinding Wafer Backside Grinding of the wafer.
When the wafer is warped, the wafer is not easy to be subjected to subsequent processing, and the yield and reliability of the chip production can be reduced.
Disclosure of Invention
The invention provides a novel wafer adsorption method, which mainly comprises the steps of arranging a blowing pipeline above a bearing surface of a bearing plate and arranging an air suction pipeline on the bearing surface of the bearing plate. The gas blowing pipe is used for blowing gas flow to the upper surface of the wafer placed on the bearing surface of the bearing disc so as to reduce the interval between the lower surface of the wafer and the bearing surface of the bearing disc. The suction pipeline is used for forming negative pressure on the bearing surface of the bearing plate, and sucking the lower surface of the wafer through the negative pressure so as to fix the wafer on the bearing surface of the bearing plate. After determining that the wafer is secured to the carrier plate, subsequent processing of the wafer may continue, such as cleaning, thin film deposition, bonding (Bonding) or separating (De-Bonding) of the wafer.
In order to achieve the above-mentioned object, the present invention provides a wafer adsorption method, comprising: placing a wafer on a bearing surface of a bearing plate, wherein the wafer comprises an upper surface and a lower surface, the lower surface of the wafer faces the bearing surface of the bearing plate, and the upper surface of the wafer faces a blowing pipeline; and the air blowing pipe blows air blowing flow towards the upper surface of the wafer, and the air suction pipe connected with the bearing surface of the bearing disc forms negative pressure so as to adsorb the lower surface of the wafer and fix the wafer on the bearing surface of the bearing disc.
Further, the wafer adsorption method further comprises adjusting the distance between the air blowing pipeline and the upper surface of the wafer so that the distance between the air blowing pipeline and the upper surface of the wafer is between 10mm and 60 mm.
Further, the wafer adsorption method further comprises adjusting the pipe diameter of the air blowing pipeline according to the diameter of the wafer.
Preferably, the ratio of the pipe diameter of the blow line to the diameter of the wafer is greater than 0.03.
Further, the wafer adsorption method further comprises adjusting the pipe diameter of the gas suction pipeline according to the diameter of the wafer, wherein the ratio of the pipe diameter of the gas suction pipeline to the diameter of the wafer is greater than 0.03.
Further, the wafer adsorption method further comprises the step that after the wafer is adsorbed by the air suction pipe, the air blowing pipe stops generating air blowing flow.
Further, the wafer adsorption method further comprises the following steps: the air blowing pipeline stops generating air blowing air flow; and the cleaning pipeline sprays cleaning liquid, cleaning gas or water to the upper surface of the wafer; and the air blowing pipeline or the drying pipeline blows a drying air flow towards the upper surface of the wafer.
Further, the wafer adsorption method further comprises the steps that the carrying disc drives the adsorbed wafer to rotate, and then cleaning liquid, cleaning gas or water is sprayed to the upper surface of the wafer through the cleaning pipeline.
Further, the wafer adsorption method further comprises measuring the warp direction or warp of the wafer, and adjusting the position of the air blowing pipeline according to the warp direction or warp.
Drawings
FIG. 1 is a schematic cross-sectional view of an embodiment of a wafer chucking apparatus of the present invention.
FIG. 2 is a flow chart illustrating the steps of an embodiment of a wafer chucking method according to the present invention.
FIG. 3 is a top view of an embodiment of a carrier plate of the wafer chucking apparatus of the present invention.
FIG. 4 is a schematic cross-sectional view of an embodiment of the wafer chucking apparatus of the present invention.
FIG. 5 is a schematic cross-sectional view of a wafer chucking apparatus according to an embodiment of the invention applied to a cleaning tool.
Reference numerals illustrate: 10-a wafer adsorption device; 11-a carrier tray; 111-bearing surface; 12-wafer; 121-upper surface; 123-lower surface; 13-an air suction line; 131-suction port; 133-connecting channels; 135-an air extraction motor; 141-blowing air flow; 15-a blow line; 30-cleaning a machine table; 31-a rotating mechanism; 33-a housing; 351-cleaning the pipeline; 353-a drying line; g-spacing.
Detailed Description
Referring to fig. 1 and 2, a schematic cross-sectional view of an embodiment of a wafer adsorbing device and a flowchart illustrating steps of an embodiment of a wafer adsorbing method according to the present invention are shown. The wafer adsorbing device 10 of the present invention includes a carrying tray 11, an air suction line 13 and an air blowing line 15, wherein the carrying tray 11 includes a carrying surface 111 for carrying at least one wafer 12.
Part of the air suction line 13 is disposed in the carrier plate 11 and is communicated with the carrying surface 111 of the carrier plate 11, wherein the air suction line 13 forms an air suction port 131 on the carrying surface 111 of the carrier plate 11. The suction line 13 is further connected to a suction motor 135, and when the suction motor 135 is started, a negative pressure is formed in the suction port 131 of the carrying surface 111 to adsorb and fix the wafer 12 on the carrying surface 111 of the carrying tray 11.
As shown in fig. 3, a connection channel 133 may be disposed on the bearing surface 111 of the bearing disc 11, for example, the connection channel 133 may be a circular groove and a radial groove uniformly disposed on the bearing surface 111, where the connection channel 133 is connected to the air suction port 131 of the air suction line 13. When the suction motor 135 is started, a negative pressure is formed on the suction port 131 and the connection channel 133 of the carrying surface 111, and the wafer 12 is more firmly adsorbed and fixed on the carrying surface 111 of the carrying tray 11.
As shown in fig. 2, the wafer 12 is placed on the carrying surface 111 of the carrying tray 11, wherein the lower surface 123 of the wafer 12 faces the carrying surface 111 of the carrying tray 11 and faces the suction port 131 and/or the connection channel 133 of the suction line 13 disposed on the carrying surface 111, as shown in step 21.
As shown in fig. 1, if the wafer 12 placed on the susceptor 11 is a warped wafer, a space G is formed between the lower surface 123 of the wafer 12 and the carrying surface 111 of the susceptor 11 and/or the suction port 131 of the suction line 13. When the distance G is greater than the critical value, negative pressure generated by the suction line 13 may be caused, and the wafer 12 cannot be adsorbed and fixed on the carrying surface 111 of the carrying tray 11.
In order to avoid the above situation, the present invention proposes to provide the gas blowing pipe 15 above the wafer 12 and/or the carrying surface 111 of the carrying tray 11, and the gas blowing pipe 15 faces the upper surface 121 of the wafer 12 and/or the carrying surface 111 of the carrying tray 11. The blow line 15 may be connected to an air compressor or a high pressure gas cylinder so that the blow line 15 may be used to generate the blow air stream 141. The blowing air flow 141 blows toward the upper surface 121 of the wafer 12, and applies pressure to the upper surface 121 of the wafer 12, so as to reduce the gap G between the lower surface 123 of the wafer 12 and the carrying surface 111 of the carrying tray 11 and/or the suction port 131 of the suction line 13, and make the lower surface 123 of the wafer 12 be as flat as possible against the carrying surface 111 of the carrying tray 11, as shown in step 23.
Referring to fig. 4, the suction port 131 and/or the connection channel 133 of the suction line 13 form a negative pressure on the carrying surface 111 of the carrying tray 11, and the lower surface 123 of the wafer 12 is adsorbed on the carrying surface 111 of the carrying tray 11, as shown in step 25. After the wafer 12 is adsorbed by the negative pressure generated by the suction pipe 13 and fixed on the carrying surface 111 of the carrying tray 11, the blowing pipe 15 stops generating the blowing air flow 141, and the subsequent process can be performed on the wafer 12 fixed on the carrying tray 11.
In an embodiment of the present invention, step 23 may be performed first, the blowing air flow 141 generated by the air blowing pipe 15 is blown to the upper surface 121 of the wafer 12, for example, the distance G between the lower surface 123 of the wafer 12 and the carrying surface of the carrying tray 11 is smaller than a certain value, and then step 25 is performed, and the suction pipe 13 is used to generate negative pressure to suck the lower surface 123 of the wafer 12.
In another embodiment of the present invention, a negative pressure may be formed on the carrying surface 111 of the carrying tray 11 by the suction line 13 in step 25, and then the blowing air flow 141 generated by the blowing line 15 is blown to the upper surface 121 of the wafer 12 in step 23. When the upper surface 121 of the wafer 12 is pressed by the blowing air flow 141 so that the gap G between the lower surface 123 of the wafer 12 and the carrying surface 111 of the carrying tray 11 is smaller than a certain value, the negative pressure generated by the air suction line 13 can naturally suck the lower surface 123 of the wafer 12. In various embodiments, steps 23 and 25 may also be performed simultaneously. The order of steps 23 and 25 is therefore not a limitation on the scope of the claims.
In addition, before the wafer 12 is placed on the supporting surface 111 of the supporting plate 11 in step 21, the wafer 12 may be measured to determine the warpage direction and/or the warpage of the wafer 12. And then the position of the air blowing pipeline 15 is adjusted according to the measured warp direction and/or warp degree of the wafer 12. Specifically, the adsorption method according to the present invention is most suitable for the wafer 12 with the middle area protruding upward, for example, the middle area of the wafer 12 protrudes from the lower surface 123 toward the upper surface 121.
In an embodiment of the present invention, the gas blowing line 15 may be displaced along a direction parallel to the upper surface 121 of the wafer 12 and/or the carrying surface 111 of the carrying tray 11, so that the gas blowing flow 141 generated by the gas blowing line 15 may be blown to different areas of the upper surface 121 of the wafer 12, for example, the gas blowing flow 141 may be blown to an area with the largest warpage on the upper surface 121 of the wafer 12.
The amount of pressure exerted by the blow air stream 141 generated by the blow air line 15 on the wafer 12 is related to the distance between the blow air line 15 and the upper surface 121 of the wafer 12. When the distance between the gas blowing line 15 and the upper surface 121 of the wafer 12 is smaller, the greater the pressure applied to the wafer 12 by the gas blowing flow 141, and the further the gap G between the lower surface 123 of the wafer 12 and the carrying surface 111 of the carrying tray 11 can be reduced. For example, the distance between the gas blowing line 15 and the upper surface 121 of the wafer 12 and/or the carrying surface 111 of the carrying tray 11 may be adjusted such that the distance between them is between 10 mm and 60 mm.
In one embodiment of the present invention, the gas line 15 may be displaced in a direction perpendicular to the upper surface 121 of the wafer 12 and/or the carrying surface 111 of the carrying tray 11, and the distance between the gas line 15 and the upper surface of the wafer 12 may be changed to adjust the pressure of the gas flow 141 applied to the wafer 12.
In practical application, the distance between the gas blowing line 15 and the upper surface 121 of the wafer 12 can be adjusted according to the warpage of the wafer 12, for example, when the warpage of the wafer 12 is large, the distance between the gas blowing line 15 and the upper surface 121 of the wafer 12 can be reduced.
In addition, the air blowing pipe 15 may be kept at a certain distance from the upper surface 121 of the wafer 12, and after the air blowing flow 141 generated by the air blowing pipe 15 blows toward the upper surface 121 of the wafer 12, the distance between the air blowing pipe 15 and the upper surface 121 of the wafer 12 may be gradually reduced to increase the pressure applied by the air blowing flow 141 to the upper surface 121 of the wafer 12, and the gap G between the lower surface 123 of the wafer 12 and the carrying surface 111 of the carrying tray 11 and the air suction port 131 of the air suction pipe 13 may be gradually reduced.
In another embodiment of the present invention, the distance between the air blowing line 15 and the upper surface 121 of the wafer 12 can be adjusted according to whether the lower surface 123 of the wafer 12 is absorbed by the negative pressure formed by the air suction line 13. For example, the air blowing line 15 may be initially kept at a large distance from the upper surface 121 of the wafer 12, and the air blowing flow 141 generated by the air blowing line 15 is blown to the upper surface 121 of the wafer 12, and the negative pressure generated by the air suction line 13 is used to suck the lower surface 123 of the wafer 12.
If the negative pressure generated by the suction line 13 actually adsorbs the wafer 12, it is not necessary to adjust the distance between the blowing line 15 and the upper surface 121 of the wafer 12. Conversely, if the negative pressure generated by the suction line 13 cannot adsorb the wafer 12, the interval G between the lower surface 123 of the wafer 12 and the suction port 131 of the suction line 13 and/or the carrying surface 111 of the carrying tray 11 is too large, and the air-blowing line 15 can be displaced toward the upper surface 121 of the wafer 12, so as to reduce the distance therebetween and increase the pressure applied to the upper surface 121 of the wafer 12 by the air-blowing air flow 141 generated by the air-blowing line 15.
In various embodiments, the distance between the gas blowing line 15 and the upper surface 121 of the wafer 12 may be fixed, and the flow rate of the gas blowing stream 141 generated by the gas blowing line 15 may be adjustable. For example, the flow rate of the blowing air stream 141 generated by the blowing air line 15 is small at the beginning, so that the blowing air stream 141 applies a small force to the upper surface 121 of the wafer 12. When the negative pressure generated by the suction line 13 cannot suck the wafer 12, the flow rate of the blowing air stream 141 generated by the blowing line 15 may be further increased to increase the pressure applied to the upper surface 121 of the wafer 12 by the blowing air stream 141.
In an embodiment of the present invention, the diameter or the cross-sectional area of the air-blowing line 15 can be adjusted according to the diameter or the area of the wafer 12, so that the air-blowing air flow 141 generated by the air-blowing line 15 can be used to reduce the gap G between the lower surface 123 of the warped wafer 12 and the air suction port 131 of the air suction line 13 and/or the carrying surface 111 of the carrying tray 11. For example, the ratio of the tube diameter of the blow line 15 to the diameter of the wafer 12 may be greater than 0.03.
In addition, the diameter or the cross-sectional area of the gas suction line 13 may be adjusted according to the diameter or the area of the wafer 12, for example, the ratio of the diameter of the gas suction line 13 to the diameter of the wafer 12 may be greater than 0.03.
As shown in fig. 4, after the wafer 12 is adsorbed on the carrying surface 111 of the carrying tray 11 by the suction line 13, the blowing air line 15 stops generating the blowing air flow 141, and the suction line 13 continues to form the negative pressure.
The wafers 12 mounted on the carrier surface 111 of the carrier plate 11 may then be subjected to subsequent processing steps, after which the suction line 13 may be stopped from generating negative pressure and the wafers 12 may be removed from the carrier plate 11, as shown in step 27.
Fig. 5 is a schematic cross-sectional view illustrating an embodiment of the wafer adsorbing device applied to a cleaning machine. The cleaning apparatus 30 includes a carrier plate 11, an air suction line 13, an air blowing line 15, a rotating mechanism 31, and a cleaning line 351, wherein the carrier plate 11 includes a carrier surface 111 for carrying at least one wafer 12.
The air suction pipeline 13 is disposed in the bearing disc 11 and is communicated with the bearing surface 111 of the bearing disc 11, wherein the air suction pipeline 13 forms an air suction port 131 on the bearing surface 111 of the bearing disc 11. When the suction motor 135 connected to the suction line 13 is started, a negative pressure is generated on the suction port 131 of the carrier plate 111 to suck and fix the wafer 12 on the carrier plate 111 of the carrier plate 11.
A blowing line 15 and/or a cleaning line 351 are disposed above the carrying surface 111 of the wafer 12 and/or the carrying tray 11, wherein the blowing line 15 blows the generated blowing air flow 141 toward the upper surface 121 of the wafer 12, and forms a negative pressure on the lower surface 123 of the wafer 12 through the suction line 13, so as to adsorb the wafer 12 on the carrying surface 111 of the carrying tray 11. When the wafer 12 is sucked by the negative pressure generated by the suction pipe 13 and is fixed on the carrying surface 111 of the carrying tray 11, the blowing pipe 15 stops generating the blowing air flow 141.
The carrier plate 11 is connected to the rotating mechanism 31, and drives the wafer 12 to rotate through the rotating mechanism 31 via the carrier plate 11, for example, the rotating mechanism 31 may include a rotating motor, a connecting rod, a bearing, and the like, and the suction pipe 13 may continuously suck the wafer 12 during the rotation.
Then, the cleaning liquid, cleaning gas, deionized water and/or pure water are sprayed on the upper surface 121 of the wafer 12 through the cleaning line 351, and the carrier 11 continuously drives the wafer 12 to rotate, so that the liquid on the upper surface 121 of the wafer 12 flows from the center of the wafer 12 to the outside to remove the dirt on the upper surface 121 of the wafer 12.
In an embodiment of the present invention, a housing 33 may be disposed around the carrier plate 11, wherein the housing 33 may be higher than the carrier surface 111 of the carrier plate 11 and the upper surface 121 of the wafer 12, and is used to block and collect the liquid exiting from the outer side of the wafer 12, so as to prevent the liquid from splashing around during the cleaning process of the wafer 12.
In one embodiment of the present invention, the air-blowing line 15 may include two air-blowing modes, namely a flat-blowing mode and a dry mode. The blowing line 15 operating in the blowing-flat mode is used to generate the blowing air stream 141, and the blowing line 15 operating in the drying mode is used to generate the drying air stream. The air blowing line 15 blows a dry air flow toward the upper surface 121 of the wafer 12 to remove liquid remaining on the upper surface 121 of the wafer 12. The air volumes of the air-blowing air stream 141 and the drying air stream may be different, for example, the air volume of the air-blowing air stream 141 may be larger than the drying air stream. The blowing gas stream 141 and the drying gas stream may be the same gas, for example, nitrogen gas, inert gas, or the like. Specifically, the air blowing flow 141 is used to reduce the gap G between the lower surface 123 of the wafer 12 and the suction port 131 of the suction line 13, and the drying mode is used to remove the liquid remaining on the upper surface 121 of the wafer 12.
In another embodiment of the present invention, the cleaning apparatus 30 may be additionally provided with a drying line 353, while the air blowing line 15 is not used for generating the drying air flow. The drying gas generated by the drying line 353 is blown toward the upper surface 121 of the wafer 12 to remove liquid remaining on the upper surface 121 of the wafer 12, for example, the dryer body may be nitrogen.
After the cleaning process of the wafer 12 is completed, the suction line 13 stops generating negative pressure, so that the wafer 12 is not sucked by the suction line 13 on the carrier 11, and the wafer 12 can be removed from the carrier 11 for subsequent processing.
In fig. 5, the Wafer adsorbing device 10 and the Wafer adsorbing method are applied to the cleaning machine 30 as an embodiment, but in practical application, the Wafer adsorbing device 10 and the Wafer adsorbing method according to the present invention may be applied to other semiconductor processing devices, not limited to the cleaning machine 30, for example, the Wafer adsorbing device 10 and the Wafer adsorbing method according to the present invention may be applied to the thin film deposition device, the Wafer bonding machine (Wafer bonder), the Wafer separator (Wafer de-bonder) and other devices.
The foregoing description is only one embodiment of the present invention and is not intended to limit the scope of the invention, i.e., the equivalents and modifications of the shape, construction, characteristics and spirit of the invention as defined in the claims should be construed as being included in the scope of the invention as claimed.
Claims (10)
1.A method of adsorbing a wafer, comprising:
Placing a wafer on a bearing surface of a bearing disc; the wafer comprises an upper surface and a lower surface, the lower surface of the wafer faces the bearing surface of the bearing disc, and the upper surface of the wafer faces a blowing pipeline; and
The gas blowing pipe blows out gas blowing flow towards the upper surface of the wafer, and the gas suction pipe connected with the bearing surface of the bearing plate forms negative pressure so as to adsorb the lower surface of the wafer and fix the wafer on the bearing surface of the bearing plate.
2. The method of claim 1, further comprising adjusting a distance of the gas blowing line from the upper surface of the wafer such that the gas blowing line is between 10mm and 60 mm from the upper surface of the wafer.
3. The method of claim 1, further comprising adjusting the diameter of the purge line based on the diameter of the wafer.
4. A method of adsorbing a wafer according to claim 3 wherein the ratio of the tube diameter of the gas blowing tube to the diameter of the wafer is greater than 0.03.
5. The method of claim 1, further comprising adjusting a tube diameter of the suction line according to a diameter of the wafer, wherein a ratio of the tube diameter of the suction line to the diameter of the wafer is greater than 0.03.
6. The method of claim 1, further comprising stopping the blowing gas line from generating the blowing gas flow after the wafer is adsorbed by the gas suction line.
7. The wafer adsorbing method according to claim 6, comprising:
A cleaning line sprays a cleaning liquid, a cleaning gas, or water toward the upper surface of the wafer; and
The gas blow line blows a flow of dry gas toward the upper surface of the wafer.
8. The wafer adsorbing method according to claim 6, comprising:
A cleaning line sprays a cleaning liquid, a cleaning gas, or water toward the upper surface of the wafer; and
A drying line blows a drying air stream toward the upper surface of the wafer.
9. The method of claim 8, further comprising rotating the wafer by the carrier plate and then spraying the cleaning liquid, the cleaning gas, or the water toward the upper surface of the wafer through the cleaning line.
10. The method of claim 1, further comprising measuring a warp direction or a warp of the wafer and adjusting a position of the gas blowing line according to the warp direction or the warp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211357772.1A CN118039545A (en) | 2022-11-01 | 2022-11-01 | Wafer adsorption method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211357772.1A CN118039545A (en) | 2022-11-01 | 2022-11-01 | Wafer adsorption method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118039545A true CN118039545A (en) | 2024-05-14 |
Family
ID=90999350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211357772.1A Pending CN118039545A (en) | 2022-11-01 | 2022-11-01 | Wafer adsorption method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118039545A (en) |
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2022
- 2022-11-01 CN CN202211357772.1A patent/CN118039545A/en active Pending
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