CN118015995A

CN118015995A - Electro-optical device, electronic apparatus, and method of driving electro-optical device

Info

Publication number: CN118015995A
Application number: CN202410159561.XA
Authority: CN
Inventors: 豊村直史
Original assignee: Sony Semiconductor Solutions Corp
Current assignee: Sony Semiconductor Solutions Corp
Priority date: 2018-08-20
Filing date: 2019-08-19
Publication date: 2024-05-10
Also published as: CN112567448A; DE112019004175T5; KR20210042315A; CN112567448B; KR102632645B1; KR20240019384A; JP7389039B2; JPWO2020040090A1; WO2020040090A1

Abstract

The application relates to an electro-optical device, an electronic apparatus, and a method of driving the electro-optical device. The application realizes a pixel circuit which is beneficial to high-precision pixel layout with less elements. The electro-optical device includes a pixel circuit (11) provided corresponding to a trunk line (12-2) and a scanning line (16), and a driving circuit that drives the pixel circuit, wherein the driving circuit is configured to perform driving to: turning on the first transistor (WS), the second transistor (AZ 2) and the fourth transistor (AZ 1) in a light emitting time period of the light emitting element (OLED); and, upon transition to the quenching time period, writing the quenching power supply (Vss) to the gate electrode of the driving transistor (Drv) through the first transistor, the second transistor, the third transistor (DS), and the fourth transistor, turning off the third transistor to correct the threshold voltage of the driving transistor, and adjusting the voltage of the gate electrode of the driving transistor to a voltage reflecting the threshold voltage.

Description

Electro-optical device, electronic apparatus, and method of driving electro-optical device

The application is a divisional application of a Chinese patent application with the application number 201980053870.6.

Technical Field

The present technology relates to an electro-optical device, an electronic apparatus, and a driving method.

Background

It is known that an electro-optical device uses an organic light emitting diode (hereinafter referred to as OLED) element or the like as a light emitting element. In the electro-optical device, a pixel circuit including a light emitting element, a transistor, and the like is provided at the intersection of a scanning line and a data line to correspond to a pixel. In the pixel circuit, when a data signal of a potential according to a gradation level of a pixel is applied to a gate of a transistor, the transistor supplies a current according to a gate-source voltage to a light emitting element, and the light emitting element emits light having a luminance according to the gradation level.

When the threshold voltage (hereinafter referred to as Vth as appropriate) of a transistor provided in each pixel changes, the current flowing through the light emitting element changes, and the image quality deteriorates. In order to prevent degradation of image quality, it is necessary to compensate for variation in Vth. In the case of compensation, a method is known in which the drain and gate of a transistor are coupled to a supply line of a data signal provided in each column, and the potential is set to a value according to the threshold voltage of the transistor.

However, since the parasitic capacitor accompanies the supply line of the data signal, the parasitic capacitor is also charged or discharged when the compensation operation is performed. By the time required to charge or discharge the parasitic capacitor, the period of the compensation operation is prolonged. Further, when the period of the compensation operation is set regardless of the time required to charge or discharge the parasitic capacitor, the compensation becomes insufficient.

Patent document 1 aims to accelerate a compensation operation for compensating for a variation in Vth. The configuration disclosed in patent document 1 is a circuit structure having a "relay line" that couples a plurality of pixels in the V direction and is used to hold electric charges at the time of correction of Vth of each pixel, thereby realizing high-speed driving.

List of references

Patent literature

Patent document 1: JP 2016-038425A

Disclosure of Invention

Problems to be solved by the invention

However, the configuration of patent document 1 requires six MOSFETs and two capacitors as elements for constituting one pixel circuit. This configuration has a large number of elements, making high definition layout difficult.

An object of the present technology is to provide an electro-optical device, an electronic apparatus, and a driving method capable of realizing acceleration of a compensation operation for compensating a variation in threshold voltage of a transistor for adjusting light emission intensity with a small number of elements.

Solution to the problem

The present technology is an electro-optical device comprising: a signal line; a trunk line; a scanning line; a power supply line that supplies electric power for quenching; a transmission capacitor coupled between the signal line and the trunk line; pixel circuits provided corresponding to the relay lines and the scanning lines; and a driving circuit driving the pixel circuit, wherein

The pixel circuit includes a driving transistor including a gate electrode, a first current terminal and a second current terminal, a light emitting element emitting light having a luminance according to a magnitude of a current supplied via the driving transistor, the first transistor coupled between the relay line and the gate electrode of the driving transistor, the second transistor turning on the first current terminal of the driving transistor and the gate electrode of the driving transistor, a third transistor interposed between the first current terminal and one terminal of the light emitting element, and a fourth transistor interposed between the power supply line and one terminal of the light emitting element, and

The driving circuit turns on the first transistor, the second transistor, and the fourth transistor in a light emitting period of the light emitting element to transition to a quenching period, and writes electric power for quenching to a gate electrode of the driving transistor through the first transistor, the second transistor, the third transistor, and the fourth transistor, and corrects a threshold voltage of the driving transistor by turning off the third transistor, and drives a voltage of the gate electrode of the driving transistor so that the voltage reflects the threshold voltage.

Further, the present technology is an electronic apparatus including the above electro-optical device.

Furthermore, the present technology is a method for driving an electro-optical device including: a signal line; a trunk line; a scanning line; a power supply line providing power for quenching; a first capacitor coupled between the signal line and the trunk line; pixel circuits provided corresponding to the relay lines and the scanning lines; and a driving circuit for driving the pixel circuit,

The pixel circuit includes: a driving transistor including a gate electrode, a first current terminal, and a second current terminal; a light emitting element that emits light having a luminance according to a magnitude of a current supplied via the driving transistor; a first transistor coupled between the relay line and a gate electrode of the driving transistor; a second transistor which turns on the first current terminal of the driving transistor and the gate electrode of the driving transistor; a third transistor interposed between the first current terminal and one terminal of the light emitting element; and a fourth transistor interposed between the power supply line and the one terminal of the light emitting element,

The method executed by the driving circuit comprises the following steps: turning on the first transistor, the second transistor, and the fourth transistor in a light emitting period of the light emitting element to transition to a quenching period, and writing electric power for quenching to a gate electrode of the driving transistor through the first transistor, the second transistor, the third transistor, and the fourth transistor; and correcting a threshold voltage of the driving transistor by turning off the third transistor, and driving a voltage of a gate electrode of the driving transistor so that the voltage reflects the threshold voltage.

Effects of the invention

According to at least one embodiment, the pixel circuit is capable of threshold correction with a smaller number of elements. Note that the effects described herein are not limiting, and any effect described in the present technology or an effect different from them may be obtained. Furthermore, the contents of the present technology should not be construed as being limited by exemplary effects in the following description.

Drawings

Fig. 1 is a connection diagram of an embodiment of a pixel circuit according to the present technology.

Fig. 2 is a timing chart for describing the configuration of fig. 1.

Fig. 3 is a connection diagram of a conventional pixel circuit example.

Fig. 4 is a timing chart for describing a conventional pixel circuit.

Detailed Description

The embodiments described below are specific examples applicable to the present technology, and give various limitations that are technically preferable. However, unless a statement that limits the present technology is provided in the following description, the scope of the present technology is not limited to the embodiments.

Note that the present technology will be described in the following order.

<1. Conventional configuration >

<2 > One embodiment of the present technology

<3 > Modification >

<4. Application example >

<1. Conventional configuration >

Prior to describing an embodiment of the present technology, a conventional configuration described in patent document 1 will be described. Fig. 3 shows a conventional pixel circuit, and fig. 4 is a timing chart showing the operation of the conventional pixel circuit. Although not shown, the electro-optical device includes a display panel and a control circuit that controls the operation of the display panel. The display panel includes a plurality of pixel circuits and a driving circuit driving the pixel circuits. A plurality of pixel circuits and a driving circuit included in a display panel are formed on a silicon substrate, and an organic light emitting diode as an example of a light emitting element is used for the pixel circuits.

The control circuit is supplied with digital image data synchronized with the synchronization signal. The image data is data in which, for example, the gradation level of a pixel of an image displayed through the display panel is specified by 8 bits. The synchronization signal is a signal including a vertical synchronization signal, a horizontal synchronization signal, and a dot clock signal. The control circuit generates various control signals based on the synchronization signal and supplies the generated control signals to the display panel. Further, the control circuit includes a voltage generating circuit. The voltage generating circuit supplies various potentials to the display panel. Further, the control circuit generates an analog image signal based on the image data.

The display panel includes a display unit and a driving circuit driving the display unit. In the display unit, pixel circuits corresponding to pixels of an image to be displayed are arranged in a matrix. That is, in the display unit, the scanning lines of M rows are provided to extend in the horizontal direction (X direction) in the drawing, and furthermore, the signal lines of (3N) columns grouped for each of three columns extend in the vertical direction (Y direction) in the drawing and are provided to be insulated from the respective scanning lines. The pixel circuits are arranged in a matrix of vertical M rows by horizontal (3N) columns.

Each pixel circuit has the same configuration. The pixel circuit 11 will be described with reference to fig. 3. One electrode of the transfer capacitor (first capacitor) Cs2 and one of the source and the drain of the fifth transistor AZ3 are coupled to the signal line 12-1. Further, the other electrode of the transmission capacitor Cs2 and the other of the source and the drain of the fifth transistor AZ3 are coupled to the relay line 12-2. That is, the transmission capacitor Cs2 and the fifth transistor AZ3 are coupled in parallel with each other between the signal line 12-1 and the relay line 12-2.

Further, the pixel circuit 11 is coupled to the relay line 12-2. That is, gradation potentials are supplied to the pixel circuits 11 through the signal lines 12-1 and the relay lines 12-2 according to the specified gradation.

Each of the pixel capacitor Cs1 and the transfer capacitor Cs2 includes two electrodes. The gate of the first transistor WS is coupled to the scan line 16 and one of the source and drain of the first transistor WS is coupled to the relay line 12-2. Further, the other of the source and the drain of the first transistor WS is coupled to each of the gate of the driving transistor Drv and one electrode of the pixel capacitor Cs 1. That is, the first transistor WS is coupled between the gate of the driving transistor Drv and the second electrode of the transfer capacitor Cs 2. Then, the first transistor WS serves as a transistor that controls the coupling between the gate of the driving transistor Drv and the second electrode of the transfer capacitor Cs2 coupled to the relay line 12-2.

The source (second current terminal) of the driving transistor Drv is coupled to the power supply line 15, and the drain (first current terminal) of the driving transistor Drv is coupled to one of the source and the drain of the second transistor AZ2 and the source of the third transistor DS. A potential VCCP at the high side of the power supply in the pixel circuit 11 is supplied to the power supply line 15. A current according to the gate-source voltage of the driving transistor Drv flows.

The second transistor AZ2 functions as a switching transistor that controls the coupling between the gate and the drain of the driving transistor Drv. The second transistor AZ2 is a transistor for conducting electricity between the gate and the drain of the driving transistor Drv via the first transistor WS.

The third transistor DS serves as a switching transistor that controls coupling between the drain of the driving transistor Drv and the anode of the organic light emitting diode. The gate of the fourth transistor AZ1 is coupled to the control line, and a control signal is supplied to the gate. Further, the drain of the fourth transistor AZ1 is coupled to a power supply line 13, and the power supply line 13 serves as a line that supplies a power supply for quenching and is held at a quenching potential Vss. The quenching potential Vss is a voltage for keeping the organic light emitting diode in a quenched state. The fourth transistor AZ1 serves as a switching transistor that controls the coupling between the power supply line 13 and the anode of the organic light emitting diode.

The control signal is supplied to the gate of the fifth transistor AZ 3. Further, one of the source and the drain of the fifth transistor AZ3 is coupled to the relay line 12-2, and is coupled to the second electrode of the transfer capacitor Cs2 and the other of the source and the drain of the second transistor AZ2 via the relay line 12-2. Further, the other of the source and the drain of the fifth transistor AZ3 is coupled to the signal line 12-1. The fifth transistor AZ3 mainly functions as a switching transistor that controls the coupling between the signal line 12-1 and the relay line 12-2.

One electrode of the pixel capacitor Cs1 is coupled to the gate of the driving transistor Drv, and the other electrode of the pixel capacitor Cs1 is coupled to the power supply line 15 (potential VCCP). The pixel capacitor Cs1 functions as a holding capacitor that holds the gate-source voltage of the driving transistor Drv. Note that as the pixel capacitor Cs1, a capacitor parasitic to the gate of the driving transistor Drv may be used, or a capacitor formed by sandwiching an insulating layer between mutually different conductive layers on a silicon substrate may be used.

The anode of the organic light emitting diode is a pixel electrode provided individually for each pixel circuit 11. In contrast, the cathode of the organic light emitting diode is a common electrode commonly provided to all the pixel circuits 11, and the holding potential Vcath is located on the low side of the power supply in the pixel circuits 11. An organic light-emitting diode is an element in which a white organic EL layer is sandwiched between an anode and a light-transmissive cathode on a silicon substrate. Further, a color filter corresponding to one of RGB overlaps with an emission side (cathode side) of the organic light emitting diode.

In such an organic light emitting diode, when a current flows from an anode to a cathode, holes injected from the anode and electrons injected from the cathode are recombined in an organic EL layer, and thus excitons are generated, and white light is generated. The white light generated at this time passes from the silicon substrate (anode) through the cathode on the opposite side and is visually recognized by the observer after being colored by the color filter.

An outline of the operation of the conventional pixel circuit will be described with reference to the drive timing chart of fig. 4. The horizontal scanning period is divided into a light emitting period, a quenching period, an initializing period, a Vth correction period, and a signal writing period. In terms of time, the cycle of light emission period→quench period→initialization period→vth correction period→write period→light emission period is repeated. Fig. 4 shows an on/off state of a transistor constituting the pixel circuit 11. The high level indicates the off state of the transistor and the low level indicates the on state of the transistor. Further, gate represents the Gate potential of the driving transistor Drv.

In the light emitting period, the third transistor DS is turned on and the transistors WS, AZ2, AZ1, and AZ3 are turned off. As a result, the driving transistor Drv supplies the voltage held by the pixel capacitor Cs1, i.e., the driving current according to the gate-source voltage, to the organic light emitting diode. A current according to a gradation potential according to a specified gradation of each pixel is supplied to the organic light emitting diode through the driving transistor Drv, and the organic light emitting diode emits light having a luminance according to the current. Here, in the light emission period, the transistor OFS is turned off and the transfer Gate (Gate) is turned off.

From the light emission period, the transistor DS is turned off and the transistor AZ1 is turned on, and the period transitions to the quenching period. As a result, the path of the current supplied to the organic light emitting diode is blocked, so that the organic light emitting diode enters a quenched state.

In the subsequent initialization period, the transistor OFS, the transistor WS, and the transistor AZ3 coupled to the signal line 12-1 are turned on, and the Vth correction reference voltage Vofs is written to the signal line 12-1 to perform an initialization operation. Since the fifth transistor AZ3 is turned on at the same time, the signal line 12-1 and the relay line 12-2 are coupled, and the second electrode of the transfer capacitor Cs2 is also set to the initial potential. As a result, the transmission capacitor Cs2 is initialized.

When the above-described initialization period ends, the Vth correction period starts. In the Vth correction period, the transistors WS, AZ2, and AZ1 are turned on, and the third transistors DS and AZ3 are turned off. At this time, the gate of the driving transistor Drv is coupled to the drain of the driving transistor Drv via the first transistor WS and the second transistor AZ2, and a drain current flows through the driving transistor Drv, thereby charging the gate. That is, the drain and gate of the drive transistor Drv are coupled to the trunk 12-2. When the threshold voltage of the driving transistor Drv is Vth, the potential Vg of the gate of the driving transistor Drv converges to (VCCP-Vth), and Vth correction is completed.

Here, in the Vth correction period, the transistor OFS is turned on and the transfer gate 14 is turned off. At this time, the relay line 12-2 is short-circuited, and therefore, the time required for charging or discharging the parasitic capacitor accompanying the relay line 12-2 is shortened, and the Vth correction period is shortened.

Note that since the third transistor DS is turned off, the drain of the driving transistor Drv is electrically decoupled from the organic light emitting diode. Further, similarly to the initialization period, the fourth transistor AZ1 is turned on, so that the anode of the organic light emitting diode and the power supply line 13 are coupled to each other, and the potential of the anode is set to the quenching potential Vss.

When the Vth correction period described above ends, the writing period starts. In the writing period, the transistors WS and AZ1 in the pixel circuit 11 are turned on, and the transistors AZ2, DS, and AZ3 are turned off. In the writing period, the transistor OFS is turned off and the transfer gate 14 is turned on. Thus, the gradation potential is supplied to one electrode of the transfer capacitor Cs 2. Then, a signal generated by level-shifting the gradation potential is supplied to the gate of the driving transistor Drv, and written into the pixel capacitor Cs1.

Note that since the third transistor DS is turned off, the drain of the driving transistor Drv is electrically decoupled from the organic light emitting diode. Further, similarly to the initialization period, the fourth transistor AZ1 is turned on, so that the anode of the organic light emitting diode and the power supply line 13 are coupled to each other, and the potential of the anode is initialized to the quenching potential Vss. Then, the period shifts to the above-described light-emitting period.

<2 > One embodiment of the present technology

In the above-described conventional pixel circuit 11, the Vth correction operation is performed when the first transistor WS is turned on. Therefore, the voltage for Vth correction is written not only in the pixel capacitor Cs1 but also in the parasitic capacitor Cp of the relay line 12-2. The relay line 12-2 is shared by a plurality of pixels, and the capacitance value varies according to the number of shared pixels. When the number of pixels to be shared decreases, the capacitance value decreases, the Vth correction speed can be increased, and this operation is advantageous for high-speed driving. On the other hand, since the number of transistors and capacitive elements is required to include eight elements, there are disadvantages in that the number of elements is large and high-definition layout is hindered.

The present technology provides a pixel circuit that reduces the number of elements while maintaining the function of the pixel circuit. Fig. 1 is a circuit diagram of one embodiment of the present technology. This embodiment has a configuration in which the fifth transistor AZ3 in the circuit configuration of fig. 3 is removed. Further, a predetermined voltage RST is applied to the signal line 12-1 via the transistor RST. The control signal is supplied to the gate of the transistor RST.

Fig. 2 shows the drive timing of an embodiment of the present technology. In the light emitting period, the third transistor DS is turned on and the transistors WS, AZ1, and AZ2 are turned off. As a result, the driving transistor Drv supplies the voltage held by the pixel capacitor Cs1, i.e., the driving current according to the gate-source voltage, to the organic light emitting diode. A current according to a gradation potential is supplied to the organic light emitting diode through the driving transistor Drv, the gradation potential is according to a specified gradation of each pixel, and the organic light emitting diode emits light having a luminance according to the current. Here, in the light emission period, the transistor RST is turned off and the transfer gate is turned off.

In the light emission period, the first transistor WS, the fourth transistor AZ1, the second transistor AZ2, and the transistor RST are turned on, and the period transitions to a quenching state. Meanwhile, in order to prepare Vth correction, the quenching potential Vss of the power supply line 13 is written via the transistor AZ2, the transistor DS, and the transistor AZ 1.

Here, the quenching potential Vss is set to a voltage that causes the driving transistor Drv to turn on in preparation for Vth correction while the organic light emitting diode is quenched.

Here, when the voltages for turning on the transistors AZ1, AZ2, and DS are expressed as v_low, and the threshold voltages of the transistors AZ1, AZ2, and DS are Vth (AZ 1) =vth (AZ 2) =vth (DS) =vth, the gate voltage Vg of the driving transistor Drv is expressed by the following formula.

When Vss < |vth|+v_low, vg= |vth|+v_low

When Vss ∈vth|+v_low, vg=vss

Thereafter, the third transistor DS is turned off to start the Vth correction period. When the third transistor DS is turned off, the drain of the driving transistor Drv is decoupled to the organic light emitting diode. The gate of the driving transistor Drv converges to (VCCP-Vth), and the Vth correction period is completed.

After the Vth correction period, the period transitions to a write period. In the writing period, the first transistor WS is turned on, the third transistor DS is turned off, the fourth transistor AZ1 is turned on, and the third transistor AZ3 and the transistor RST are turned off. When Vsig voltage is shifted from VCCP to (VCCP-Vsig), the gate voltage is shifted to a voltage expressed by the following expression.

VCCP-Vth-Vdata×Cs2/(Cs1+Cs2)

Accordingly, the gate voltage of the driving transistor Drv becomes a voltage reflecting Vth, and Vth is eliminated at the time of light emission. Thereafter, the first transistor WS and the fourth transistor AZ1 are turned off and the third transistor DS is turned on to transition to the light emitting period.

As described above, even when the transistor AZ3 is removed from the conventional configuration including six transistors and two capacitors to constitute the configuration including five transistors and two capacitors, by setting the drive timing at which the Vth correction preparation voltage is written from Vss, the Vth correction operation can be performed similarly to the conventional configuration. That is, in the pixel circuit of the present technology, the Vth correction preparation voltage is not written from the signal line at the time of preparation of Vth correction, but a power supply coupled to the anode of the organic light emitting diode serving as a light emitting element via a switching transistor is used. Since the number of elements can be reduced in this way, a pixel circuit advantageous for high-definition pixel layout can be realized.

<3 > Modification >

Above, a specific description has been given of the embodiments of the present technology. However, the present technology is not limited to each of the embodiments described above, and various modifications based on the technical idea of the present technology may be made. For example, various modifications are possible as described below. Further, one or more aspects of the modifications described below may be arbitrarily selected and appropriately combined. In addition, the configurations, methods, steps, shapes, materials, numerical values, and the like in the above-described embodiments may be combined with each other without departing from the gist of the present technology.

In the above embodiments, the transistors are all P-channel type transistors, but may be all N-channel type transistors. Further, a P-channel type transistor and an N-channel type transistor may be appropriately combined.

In the above-described embodiment, an example in which an organic light-emitting diode serving as a light-emitting element is used as an electro-optical device is described, but for example, the electro-optical device may be an element such as an inorganic light-emitting diode or a light-emitting diode (LED) that emits light with luminance according to current.

<4. Application example >

Next, an electronic apparatus to which an electro-optical device according to an embodiment or the like or an application example is applied will be described. The electro-optical device is suitable for high definition display with small-sized pixels. Accordingly, a display device such as a head mounted display, smart glasses, a smart phone, or an electronic viewfinder of a digital camera may be applied as the electronic device.

Note that the present technology may also include the following configuration.

(1)

An electro-optic device comprising:

A signal line;

a trunk line;

A scanning line;

A power supply line that supplies electric power for quenching;

a transmission capacitor coupled between the signal line and the trunk line;

pixel circuits provided corresponding to the relay lines and the scanning lines; and

A driving circuit for driving the pixel circuit,

Wherein the method comprises the steps of

The pixel circuit comprises

A drive transistor including a gate electrode, a first current terminal and a second current terminal,

A light emitting element emitting light having a luminance according to a magnitude of a current supplied via the driving transistor,

A first transistor coupled between the relay line and the gate electrode of the driving transistor,

A second transistor which turns on the first current terminal of the driving transistor and the gate electrode of the driving transistor,

A third transistor interposed between the first current terminal and one terminal of the light emitting element, and

A fourth transistor interposed between the power supply line and one terminal of the light emitting element, and

Driving circuit

Turning on the first transistor, the second transistor, and the fourth transistor in a light emitting period of the light emitting element to transition to a quenching period, and writing electric power for quenching to a gate electrode of the driving transistor through the first transistor, the second transistor, the third transistor, and the fourth transistor, and

The threshold voltage of the driving transistor is corrected by turning off the third transistor, and the voltage of the gate electrode of the driving transistor is driven so that the voltage reflects the threshold voltage.

(2)

The electro-optical device according to (1), wherein

The power for quenching is set such that the drive transistor is turned on during the quenching period while the light emitting element is quenched.

(3)

The electro-optical device according to (1) or (2), further comprising

A pixel capacitor including one electrode coupled to the gate electrode of the driving transistor and the other electrode coupled to the voltage supply line, the pixel capacitor maintaining a gate-source voltage of the driving transistor.

(4)

An electronic device comprising

The electro-optical device according to (1).

(5)

A method for driving an electro-optic device, comprising:

A signal line;

a trunk line;

A scanning line;

A power supply line that supplies electric power for quenching;

A first capacitor coupled between the signal line and the trunk line;

A driving circuit for driving the pixel circuit,

The pixel circuit includes:

a driving transistor including a gate electrode, a first current terminal, and a second current terminal;

A light emitting element that emits light having a luminance according to a magnitude of a current supplied via the driving transistor;

A first transistor coupled between the relay line and a gate electrode of the driving transistor;

a second transistor which turns on the first current terminal of the driving transistor and the gate electrode of the driving transistor;

A third transistor interposed between the first current terminal and one terminal of the light emitting element; and

A fourth transistor interposed between the power supply line and one terminal of the light emitting element,

A method performed by a drive circuit, comprising:

turning on the first transistor, the second transistor, and the fourth transistor in a light emitting period of the light emitting element to transition to a quenching period, and writing electric power for quenching to a gate electrode of the driving transistor through the first transistor, the second transistor, the third transistor, and the fourth transistor; and

(6)

The method of driving an electro-optical device according to (5), wherein

(7)

The method of driving an electro-optical device according to (5) or (6), wherein

The pixel circuit further includes a pixel capacitor including one electrode coupled to the gate electrode of the driving transistor and the other electrode coupled to the voltage supply line, the pixel capacitor maintaining the gate-source voltage of the driving transistor.

List of reference marks

11-Pixel circuit

12-1 Signal line

12-2 Trunk

13. 15 Feeder

14 Transfer gate

16 Scan lines

VCCP power supply line

Drv, WS, AZ2, DS, AZ1, AZ3 transistors

Cs1 pixel capacitor

Cs2 transmission capacitor

Vss quenches the potential.

Claims

1. An electro-optic device comprising:

A signal line;

a trunk line;

A scanning line;

A power supply line that supplies electric power for quenching;

a transmission capacitor coupled between the signal line and the trunk line;

pixel circuits provided in correspondence with the relay lines and the scanning lines; and

A driving circuit driving the pixel circuit,

Wherein the method comprises the steps of

The pixel circuit includes:

A light emitting element emitting light having a luminance according to a magnitude of a current supplied through the driving transistor,

A second transistor that turns on the first current terminal of the driving transistor and the gate electrode of the driving transistor,

A fourth transistor interposed between the power supply line and the one terminal of the light emitting element, and

The driving circuit

Turning on the first transistor, the second transistor, and the fourth transistor in a light emitting period of the light emitting element to transition to a quenching period, and writing the electric power for quenching to the gate electrode of the driving transistor through the first transistor, the second transistor, the third transistor, and the fourth transistor, and

2. The electro-optic device of claim 1, wherein

3. An electro-optic device as claimed in claim 1, further comprising

A pixel capacitor including one electrode coupled to the gate electrode of the driving transistor and the other electrode coupled to a voltage supply line, the pixel capacitor maintaining a gate-source voltage of the driving transistor.

4. An electronic device comprising

The electro-optic device of claim 1.

5. A method for driving an electro-optic device, the electro-optic device comprising:

A signal line;

a trunk line;

A scanning line;

A power supply line that supplies electric power for quenching;

a first capacitor coupled between the signal line and the trunk line;

A driving circuit driving the pixel circuit,

The pixel circuit includes:

a first transistor coupled between the relay line and the gate electrode of the driving transistor;

a second transistor that turns on the first current terminal of the driving transistor and the gate electrode of the driving transistor;

A fourth transistor interposed between the power supply line and the one terminal of the light emitting element,

The method performed by the driving circuit includes:

Turning on the first transistor, the second transistor, and the fourth transistor in a light emitting period of the light emitting element to transition to a quenching period, and writing the electric power for quenching to the gate electrode of the driving transistor through the first transistor, the second transistor, the third transistor, and the fourth transistor; and

6. The method of driving an electro-optic device of claim 5, wherein

7. The method of driving an electro-optic device of claim 5, wherein

The pixel circuit further includes a pixel capacitor including one electrode coupled to the gate electrode of the driving transistor and the other electrode coupled to a voltage supply line, the pixel capacitor maintaining a gate-source voltage of the driving transistor.