CN118003367B

CN118003367B - Mechanical arm and probe station

Info

Publication number: CN118003367B
Application number: CN202410419796.8A
Authority: CN
Inventors: 刘世文
Original assignee: Shenzhen Senmei Xieer Technology Co ltd
Current assignee: Shenzhen Senmei Xieer Technology Co ltd
Priority date: 2024-04-09
Filing date: 2024-04-09
Publication date: 2024-06-04
Anticipated expiration: 2044-04-09
Also published as: CN118003367A

Abstract

The application provides a mechanical arm and a probe station. The mechanical arm comprises: the arm body is provided with a bearing surface, the bearing surface is used for transporting wafers, the arm body is provided with an air passage and a plurality of air holes, the air passage is used for circulating air, and the air holes are exposed on the bearing surface and are used for emitting air; the vortex plates are carried on the bearing surface, the vortex plates are also covered on openings of the air holes on the bearing surface, gaps are formed between the peripheral sides of the vortex plates and the bearing surface, at least part of air emitted from the air holes is emitted from the gaps to the bearing surface, the vortex plates are arranged at intervals, one of the vortex plates is covered on one of the air holes, and the other one of the vortex plates is covered on the other one of the air holes; the arm body is further provided with an air guide groove, the air guide groove is exposed on the bearing surface and used for guiding at least part of air emitted from the air hole to the outside of the arm body, so that the transportation accuracy and stability of the mechanical arm to the ultrathin wafer are improved.

Description

Mechanical arm and probe station

Technical Field

The application relates to the technical field of wafer detection, in particular to a mechanical arm and a probe station.

Background

In semiconductor fabrication and testing, ultra-thin wafers are a common material, typically only a few tens of microns thick. However, due to the fragility and fragility of the ultra-thin wafer, the conventional robot is easily damaged during the process of gripping and transporting the ultra-thin wafer, and it is difficult for the conventional robot to accurately grip and place the ultra-thin wafer.

Accordingly, a Bernoulli arm is selected for use in the probe station to transport ultra thin wafers. However, in practical application, the bernoulli arm easily generates gas interference in the gas flowing process on the surface of the arm, and the gas interference can cause unstable adsorption of the ultrathin wafer and cause the wafer to move or fall off in the transportation process, thereby affecting the accuracy and stability of the test of the probe station.

Disclosure of Invention

In view of the above, the present application provides a robot and a probe station, so that the robot can stably transport an ultra-thin wafer.

In a first aspect, the present application provides a robotic arm comprising:

The arm body is provided with a bearing surface, the bearing surface is used for transporting wafers, the arm body is provided with an air passage and a plurality of air holes, the air passage is arranged in the arm body, one end of the air passage is communicated with a gas source, the other end of the air passage is communicated with the plurality of air holes, the air passage is used for circulating gas, and the plurality of air holes are exposed on the bearing surface and are used for emitting the gas; and

The vortex plates are supported on the bearing surface, the vortex plates are further covered on openings of the air holes on the bearing surface, gaps are formed between the periphery sides of the vortex plates and the bearing surface, at least part of air emitted from the air holes is emitted to the bearing surface from the gaps, the vortex plates are arranged at intervals, one of the vortex plates is covered on one of the air holes, and the other one of the vortex plates is covered on the other one of the air holes;

The arm body is also provided with an air guide groove, the air guide groove is exposed on the bearing surface and is used for guiding at least part of air emitted by the air hole to the outside of the arm body.

The bearing surface is provided with a plurality of slope areas, the slope areas are arranged on the periphery of the vortex disc in a surrounding mode, the arm body is further provided with a bottom surface which is opposite to the bearing surface, the distance between the slope areas and the bottom surface is gradually increased along a first direction, the first direction is the direction that the vortex disc points to the slope areas, and the air guide groove is arranged on one side, deviating from the vortex disc, of the slope areas.

Wherein, in the first direction, the vortex disk has a maximum width D ₁ and the ramp region has a maximum width D ₂, wherein D ₂≥D₁.

The arm body is provided with a central shaft, the arm body is symmetrically arranged relative to the central shaft, the vortex disk groups comprise two vortex disk groups which are symmetrically arranged relative to the central shaft, the vortex disk groups comprise a first vortex disk, a second vortex disk and a third vortex disk which are arranged at intervals, the slope areas are provided with a first slope area, a second slope area and a third slope area which are arranged at intervals, the first slope area is surrounded on the periphery of the first vortex disk, the second slope area is surrounded on the periphery of the second vortex disk, and the third slope area is surrounded on the periphery of the third vortex disk; the air guide groove comprises a first subslot, a second subslot and a third subslot, wherein the first subslot is at least partially opposite to the first slope area, the second subslot is at least partially opposite to the second slope area, and the third subslot is at least partially opposite to the third slope area.

The first sub-groove, the second sub-groove and the third sub-groove are arranged at intervals, the first sub-groove is provided with a first arc-shaped part and a first direct current part which are connected, the first arc-shaped part is arranged opposite to the peripheral side surface of the first vortex disk, the first arc-shaped part is attached to the first slope area and is arranged, and the first direct current part is communicated with the peripheral side of the arm body;

The second sub-groove is provided with a second arc-shaped part and a second direct current part which are connected, the second arc-shaped part is arranged opposite to the peripheral side surface of the second vortex disk, the second arc-shaped part is attached to the second slope area, and the second direct current part is communicated with the peripheral side of the arm body;

The third sub-groove is provided with a third direct current part, the third direct current part and the peripheral side surface of the third vortex disk are oppositely arranged, the third direct current part is arranged in the third slope area at intervals, and the third direct current part is communicated with the peripheral side of the arm body.

The first sub-groove, the second sub-groove and the third sub-groove are communicated with each other, one end of the first sub-groove is opposite to the peripheral side surface of the first vortex disk, the first sub-groove is also provided with a first arc-shaped edge, and the first arc-shaped edge surrounds the third slope area and is opposite to the third slope area;

One end of the second sub-groove is arranged opposite to the peripheral side surface of the second vortex disk, and the second sub-groove is also provided with a second arc-shaped edge which surrounds the third slope area and is arranged opposite to the third slope area;

The third subslot set up in first subslot with the second subslot deviates from one side of third slope district, the third subslot communicates in the periphery side of arm body.

Along the arrangement direction of the first sub-slot and the second sub-slot, the third vortex disk has a maximum width D ₃, and the third sub-slot has a maximum width D ₄, wherein D ₄≥D₃.

The bearing surface forms the surface of the air guide groove and is also provided with a plurality of flow passages, the flow passages extend along the direction of the vortex disk pointing to the air guide groove, and the flow passages are arranged at intervals.

The vortex disk comprises a propping part, a body part and a peripheral part, wherein the propping part, the body part and the peripheral part are sequentially bent and connected, the propping part is propped against the arm body, the body part and the arm body are arranged at intervals, the body part is at least partially opposite to the air hole, the peripheral part and the propping part are arranged on the same side of the body part, the peripheral part and the arm body are arranged at intervals, a gap is formed between the peripheral part and the arm body, a minimum distance H ₁ is formed between the peripheral part and the arm body, and a minimum distance H ₂ is formed between the body part and the arm body, wherein H ₁＜H₂ is formed between the peripheral part and the arm body.

In a second aspect, the present application also provides a probe station, where the probe station includes the mechanical arm. The mechanical arm provided by the embodiment comprises an arm body and a plurality of vortex plates, wherein the mechanical arm emits gas to the surface of a wafer through the vortex plates, and the wafer is adsorbed according to the Bernoulli principle. The arm body is also provided with an air guide groove, the air guide groove is exposed on the bearing surface and is used for guiding at least part of air emitted by the air hole to the outside of the arm body. The arrangement of the air guide groove can ensure that gas can flow and be uniformly distributed among the vortex plates, so that the gas emitted by the vortex plates is prevented from interfering with each other, the flow and the pressure of the gas are controlled, the mechanical arm can keep a stable adsorption environment for a wafer, the situation that the wafer deviates or falls off when the mechanical arm moves fast or is disturbed externally is avoided, the transportation accuracy and stability of the mechanical arm to the ultrathin wafer are improved, and the reliability of the operation process of the probe station is further guaranteed.

Drawings

In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art.

FIG. 1 is a schematic view of a mechanical arm according to a first embodiment of the present application;

FIG. 2 is a schematic diagram of a robot carrying a wafer according to an embodiment of the present application;

FIG. 3 is a schematic top view of a robot arm according to an embodiment of the present application;

FIG. 4 is a schematic cross-sectional view of a robot arm according to a comparative embodiment of the present application;

FIG. 5 is a schematic cross-sectional view of the robot arm provided in FIG. 3 along line A-A;

FIG. 6 is a partial schematic view of the cross-section of the robot arm provided in FIG. 3 along line A-A;

FIG. 7 is a schematic diagram of a mechanical arm according to a second embodiment of the present application;

FIG. 8 is a schematic view of a mechanical arm according to a third embodiment of the present application;

FIG. 9 is a schematic view of a mechanical arm according to a fourth embodiment of the present application;

FIG. 10 is a schematic view of a mechanical arm according to a fifth embodiment of the present application;

FIG. 11 is a schematic top view of a robot arm according to another embodiment of the present application;

FIG. 12 is a schematic view of a robot arm according to a sixth embodiment of the present application;

FIG. 13 is a schematic view of a further cross-section of the robot arm provided in FIG. 3 along line A-A;

FIG. 14 is a schematic view of a robot arm according to a seventh embodiment of the present application;

FIG. 15 is a schematic view of a bottom view of a robot arm according to an embodiment of the present application;

FIG. 16 is a schematic structural view of an adjustment assembly according to an embodiment of the present application;

FIG. 17 is a schematic diagram of the structure of a probe station according to an embodiment of the application.

Reference numerals illustrate:

1-probe station, 10-mechanical arm, 20-wafer, 11-arm body, 12-vortex disk, 13-first limit column, 14-second limit column, 15-third limit column, 16-fourth limit column, 17-adjusting component, 111-bearing surface, 112-gas path, 113-gas hole, 114-gas guide groove, 115-central shaft, 116-slope area, 117-first edge, 118-second edge, 119-protrusion, 121-vortex disk group, 122-supporting part, 123-body part, 124-peripheral part, 171-cylinder, 172-guide rod, 173-movable plate, 174-fixed plate, 1111-runner, 1141-first sub-slot, 1142-second sub-slot, 1143-third sub-slot, 1161-first ramp region, 1162-second ramp region, 1163-third ramp region, 1211-first vortex plate, 1212-second vortex plate, 1213-third vortex plate, 114 a-first arc portion, 114 b-first direct current portion, 114 c-second arc portion, 114 d-second direct current portion, 114 e-third direct current portion, 114 f-first arc edge, 114 g-second arc edge.

Detailed Description

The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.

The terms first, second and the like in the description and in the claims and in the above-described figures are used for distinguishing between different objects and not necessarily for describing a sequential or chronological order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" or "implementation" means that a particular feature, structure, or characteristic described in connection with the embodiment or implementation may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

Before the technical scheme of the application is described, the technical problems in the related art are described in detail.

The wafer is a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and the original material is silicon. The probe station may place an electrical, optical, or radio frequency probe on the wafer so that it may be used in conjunction with test equipment and semiconductor test systems to detect wafer surface defects. In the probe station, a robot is typically used to transport wafers between the cassettes and the chucks.

Conventional robots typically utilize vacuum suction to hold and transport wafers. Wherein a wafer of conventional thickness (e.g., wafer thickness=0.6 mm) is flat because the wafer is thick without warpage, so that good fixing of the wafer can be achieved with vacuum using conventional robots.

However, when the wafer is an ultra-thin wafer (for example, the thickness of the wafer is less than or equal to 0.3 mm), the ultra-thin wafer is thin and relatively warped, and the surface of the ultra-thin wafer is easily uneven, if the wafer is adsorbed by a conventional vacuum manipulator, there are a plurality of problems: 1) The ultrathin wafer is very fragile, and the wafer is easily broken by adopting a vacuum adsorption mode; 2) Ultrathin wafers are warped, and the vacuum manipulator usually adsorbs the wafers through a plurality of vacuum chucks, so that the situation that part of the chucks adsorb the wafers and the other part of the chucks cannot adsorb the wafers exists, and the wafer warpage is more serious; 3) Because the gas paths of the plurality of vacuum chucks are generally communicated, when a certain vacuum chuck is not adsorbed to a wafer, the whole vacuum gas path can be disabled, so that other vacuum chucks can be disabled, and the wafer cannot be well adsorbed and fixed by the mechanical arm.

Thus, some probe stations employ Bernoulli arms to transport ultra-thin wafers. The bernoulli arm is fabricated according to the bernoulli principle. The Bernoulli principle is a basic principle adopted by hydraulics before a continuous medium theoretical equation of the hydraulics is established, and the basic principle is essentially the conservation of mechanical energy of the fluid. Namely: kinetic energy + gravitational potential energy + pressure potential energy = constant. The best known reasoning is: when the flow is equal in height, the flow speed is high, and the pressure is low.

The bernoulli principle is often expressed as:

This equation is called the bernoulli equation. Where p is the pressure at a point in the fluid, v is the flow rate at that point in the fluid, ρ is the fluid density, g is the gravitational acceleration, h is the height at which that point is located, and C is a constant. It can also be expressed as:

According to the bernoulli principle, during the operation of the bernoulli arm, the bernoulli arm sprays gas to the periphery through the chuck, and after the sprayed gas (such as inert gas like nitrogen) encounters the surface of the wafer, the gas rapidly diffuses from the surface of the wafer, so that the air flow speed of the surface of the wafer (the surface of the wafer adjacent to the arm) is greater than the air flow speed of the back surface (the surface of the wafer opposite to the arm), and at this time, the air pressure of the back surface of the wafer is greater than the air pressure of the surface of the wafer, so that the wafer is adsorbed on the bernoulli arm.

However, any two adjacent suckers on the bernoulli arm are easy to interfere with each other in the process of blowing air around. Specifically, the suction cups are all blown to the peripheral side, and the blowing directions between two adjacent suction cups are opposite to each other so as to generate interference when meeting. The gases after the mutual interference will have opposite forces, thus alleviating the negative pressure effect, causing the gases to flow upwards and creating an upward holding force, which in turn may result in weak wafer adsorption. Such weak adsorption may cause the wafer to move or fall off during the transfer process, thereby affecting the test result of the probe station.

In view of this, to solve the above-mentioned problems, the present application provides a robot arm 10. Please refer to fig. 1,2 and 3. The robot arm 10 of the present embodiment includes an arm body 11 and a plurality of eddy current disks 12. The arm body 11 has a carrying surface 111, the carrying surface 111 is used for transporting the wafer 20, the arm body 11 has an air channel 112 and a plurality of air holes 113, the air channel 112 is arranged in the arm body 11, one end of the air channel 112 is communicated with a gas source, the other end of the air channel 112 is communicated with the plurality of air holes 113, the air channel 112 is used for circulating gas, and the plurality of air holes 113 are exposed on the carrying surface 111 and are used for emitting gas. The vortex plate 12 is supported on the supporting surface 111, the vortex plate 12 is further covered on an opening of the air hole 113 on the supporting surface 111, a gap is formed between the periphery of the vortex plate 12 and the supporting surface 111, the air emitted from the air hole 113 is at least partially emitted from the gap to the supporting surface 111, the vortex plates 12 are arranged at intervals, one of the vortex plates 12 is covered on one of the air holes 113, and the other of the vortex plates 12 is covered on the other of the air holes 113. The arm body 11 further has an air guide groove 114, where the air guide groove 114 is exposed on the bearing surface 111, and is configured to guide at least part of the air emitted from the air hole 113 to the outside of the arm body 11.

Optionally, the robot arm 10 is used in the probe station 1 and for transporting wafers 20. The manipulator arm 10 is a bernoulli arm, i.e. the manipulator arm 10 is designed according to the bernoulli principle.

Optionally, when the wafer 20 is carried by the robot arm 10, the first surface is disposed adjacent to the carrying surface 111 compared to the second surface, the vortex plate 12 of the robot arm 10 sprays inert gas toward the first surface of the wafer 20, the inert gas has a first acting force on the wafer 20, the second surface of the wafer 20 receives a second acting force from an external environment, and the second acting force is a pressure of air on the wafer 20, wherein a flow speed of the inert gas is faster than a flow speed of air in the external environment, and the second acting force is greater than the first acting force, so that the wafer 20 is adsorbed on the arm body 11.

Specifically, the arm body 11 of the mechanical arm 10 is provided with an air channel 112, and the air channel 112 can circulate positive pressure air. The vortex plate 12 is fixed on the arm body 11 and is communicated with the air passage 112. The positive pressure gas flowing through the gas path 112 enters the vortex plate 12, and can be blown out from the peripheral side of the vortex plate 12 and spread around. When the arm body is close to the wafer 20, a negative pressure is generated on the surface of the wafer 20 by the Bernoulli principle, that is, a pressure difference is formed between the upper surface and the lower surface of the wafer 20, and the wafer 20 is adsorbed to the arm body under the action of the pressure difference. And because the vortex plate 12 blows out gas, a gap is formed between the wafer 20 and the arm body, and the wafer 20 is in a suspended state relative to the vortex plate 12.

Optionally, the robot arm 10 is a non-contact arm. The carrying surface 111 of the arm body 11 is used for transporting the wafer 20, which is understood that when the robot arm 10 transports the wafer 20, the carrying surface 111 is disposed adjacent to the wafer 20, and the wafer 20 is in a floating state relative to the carrying surface 111.

It can be appreciated that, compared to the conventional vacuum robot, when the wafer 20 is an ultra-thin wafer 20, the robot 10 blows air to the ultra-thin wafer 20 instead of vacuum sucking the ultra-thin wafer 20, so that damage to the ultra-thin wafer 20 can be avoided. And the manipulator arm 10 can avoid the situation that the ultrathin wafer 20 cannot be adsorbed by vacuum because of warping, and the manipulator arm 10 can flatten the warped ultrathin wafer 20 in the process of blowing the ultrathin wafer 20, so that the effective fixation and transportation of the warped ultrathin wafer 20 are satisfied.

Optionally, the air channel 112 is separately disposed inside the arm body 11, or is directly machined by using the arm body 11. The gas circuit 112 is in communication with a gas source and is capable of circulating a positive pressure gas. Wherein the positive pressure gas provided by the gas source includes, but is not limited to, nitrogen or other inert gas, and the like.

Optionally, the arm body 11 is provided with a plurality of air holes 113, and the vortex plate 12 and the air holes 113 are arranged in a one-to-one correspondence. Specifically, the vortex plate 12 is carried on the carrying surface 111 and covers the air holes 113. One of the plurality of vortex plates 12 is covered on one of the plurality of air holes 113, and the other of the plurality of vortex plates 12 is covered on the other of the plurality of air holes 113.

Wherein the number of the air holes 113 is two, or three, or four, or five, or six, or other more, etc., and the number of the air holes 113 is equal to the number of the vortex plates 12.

Optionally, each of the air holes 113 includes a plurality of air holes 113. The air holes 113 are communicated with the air channel 112, and the air holes 113 are exposed on the bearing surface 111 and are used for emitting air to the vortex plate 12. The number of air holes 113 includes, but is not limited to, two, or three, or four, or five, or six, or other greater numbers, etc.

Optionally, the air channels 112 are simultaneously connected to the plurality of air holes 113, and are connected to the plurality of air holes 113 in each of the plurality of air holes 113.

Optionally, the width of the air hole 113 is smaller than the width of the air channel 112, so that the air in the air channel 112 can flow out of the air hole 113 quickly.

Optionally, the vortex plate 12 includes, but is not limited to, being secured to the arm body by adhesive, or threaded connection, or solder, or other means. And a gap is formed between the peripheral portion 124 of the vortex disk 12 and the bearing surface 111, so that the gas emitted from the gas holes 113 can be emitted from the gap. The gas exiting from the gap of the vortex disk 12 flows on the bearing surface 111, so that the mechanical arm 10 can generate a pressure difference on the upper surface and the lower surface of the wafer 20 according to the bernoulli principle, and the adsorption of the wafer 20 is realized.

Alternatively, the number of the vortex plates 12 is two, or three, or four, or five, or six, or other greater number, or the like, and the plurality of vortex plates 12 are disposed at intervals from each other.

Alternatively, the plurality of air holes 113 in the air hole 113 set are surrounded on the inner peripheral side of the vortex disk 12, and the plurality of air holes 113 are uniformly spaced, so that the air can be uniformly emitted to the vortex disk 12. The gas emitted from the vortex disk 12 diffuses to the periphery.

It will be appreciated that referring to fig. 4, in a comparative embodiment of the present application, the gas exiting two adjacent vortex plates 12 would be prone to gas interference when they meet. When the gas emitted from the adjacent two vortex plates 12 interfere, the gas interference causes the gas pressure distribution among the vortex plates 12 to become uneven, resulting in pressure fluctuation, resulting in positional displacement of the wafer 20. And part of the gas flows along the direction of the arm body pointing to the wafer 20, so as to generate a lifting force on the wafer 20, so that the wafer 20 moves away from the robot, and the adsorption force between the wafer 20 and the vortex disk 12 is gradually weakened, so that the wafer 20 is swayed or vibrated, and particularly when the robot 10 moves rapidly or is subject to external disturbance, the wafer 20 is easily separated from the robot 10.

Wherein, according to Bernoulli principle formula:

It will be appreciated that, in the case where the flow velocity v of the inert gas ejected from the vortex disk 12 is unchanged, when the gas guide groove 114 is not provided in the arm body 11, the gas interferes to lift the wafer 20 upward, so that the volume of the gas flow layer between the wafer 20 and the arm body 11 becomes large, the fluid density ρ of the inert gas in the gas layer is reduced, and the pressure p of the gas flow layer is increased, so that the lifting force of the wafer 20 is further applied, the distance between the wafer 20 and the arm body 11 becomes long, and a good adsorption effect cannot be obtained gradually, so that the wafer falls off.

In this embodiment, in order to reduce the risk of the wafer 20 falling off due to gas interference, referring to fig. 5, the arm body is further provided with a gas guide groove 114. Specifically, the air guide groove 114 is exposed on the bearing surface 111, and is configured to guide at least part of the air emitted from the air hole 113 to the outside of the arm body 11. In other words, the gas diffused around the vortex plates 12 may partially circulate to the outside of the arm body 11 through the gas guide grooves 114, so as to increase the circulation effect of the gas, and reduce or avoid the mutual interference of the gases emitted between two adjacent vortex plates 12, so as to avoid the weak adsorption of the wafer 20.

Optionally, the air guide groove 114 is disposed between two adjacent vortex plates 12, before the gas exiting from the vortex plate 12 meets the gas exiting from the adjacent vortex plate 12, part of the gas flows to the outside of the arm body 11 through the air guide groove 114, so that the gas interference generated on the surface of the mechanical arm 10 is less or no, so that the volume of the gas flow layer of the inert gas between the wafer 20 and the arm body 11 can be kept unchanged, the fluid density ρ of the gas layer can be kept stable, and the pressure p of the gas flow layer can be kept stable, thereby giving a stable adsorption effect to the wafer 20.

Optionally, the air guide groove 114 is exposed on the bearing surface 111 and is connected to the outer periphery of the arm body 11.

Optionally, the air guide slots 114 are disposed adjacent to the peripheral side of the vortex disk 12. In other words, the air guide groove 114 is provided at least partially facing the peripheral side surface of the vortex plate 12.

In summary, the mechanical arm 10 provided in this embodiment includes the arm body 11 and the plurality of vortex plates 12, the mechanical arm 10 emits the gas to the surface of the wafer 20 through the vortex plates 12, and the adsorption of the wafer 20 is realized according to the bernoulli principle, and compared with the conventional vacuum mechanical arm, the mechanical arm 10 can well adsorb the ultra-thin wafer 20. The arm body 11 further has an air guide groove 114, where the air guide groove 114 is exposed on the bearing surface 111, and is configured to guide at least part of the air emitted from the air hole 113 to the outside of the arm body 11. The air guide grooves 114 can ensure that air can flow and be uniformly distributed among the vortex plates 12, so that the air emitted by the vortex plates 12 is prevented from interfering with each other, the flow and the pressure of the air are controlled, the mechanical arm 10 can keep a stable adsorption environment for the wafer 20, the situation that the wafer 20 is deviated or falls off when the mechanical arm 10 moves fast or is disturbed outside is avoided, and the transportation accuracy and stability of the mechanical arm 10 for the ultrathin wafer 20 are improved.

Please refer to fig. 1 and 6. The bearing surface 111 has a plurality of slope areas 116, the slope area 116 encloses and locates the week side of vortex dish 12, the arm body 11 still have with the bottom surface that bearing surface 111 set up in opposite directions, along first direction, slope area 116 with the distance between the bottom surface increases gradually, first direction Y is for the vortex dish 12 is directed to the direction of slope area 116, just the air duct 114 set up in the slope area 116 deviates from one side of vortex dish 12.

Optionally, the ramp region 116 surrounds the periphery of the vortex disk 12, in other words, the vortex disk 12 is disposed adjacent to a center point of the ramp region 116, in other words, the ramp region 116 is disposed centered on the vortex disk 12.

Optionally, the plurality of slope areas 116 are arranged in a one-to-one correspondence with the plurality of vortex disks 12, that is, the periphery of each vortex disk 12 is provided with a slope area 116.

Optionally, the bottom surface is a surface of the arm body 11 facing away from the bearing surface 111, and the bearing surface 111 is disposed opposite to the bottom surface.

Alternatively, the distance between the sloped region 116 and the bottom surface increases gradually along the first direction Y. Wherein the distance between the sloped region 116 and the bottom surface is understood to be the smallest distance between the sloped region 116 and the bottom surface. And, the first direction Y may be understood as a direction in which the center point of the vortex disk 12 points to any point on the periphery of the sloped region 116.

In the present embodiment, the plurality of air holes 113 in the air hole 113 group are uniformly provided at intervals on the inner peripheral side of the vortex plate 12, and can emit air from the gap between the vortex plate 12 and the bearing surface 111 to the periphery of the vortex plate 12. The slope area 116 encloses and locates around the vortex disk 12, the gas that the vortex disk 12 was emergent can be followed the slope area 116 is to the diffusion all around, thereby makes gas can flow to more quick and even the surface of arm body 11, makes the arm body 11 with the air current layer between the wafer 20 distributes more evenly, and reduces the pressure differential in different regions in the air current layer, and then makes the wafer 20 is relative the position of arm problem is more firm.

Optionally, the air guide slot 114 is disposed on a side of the sloped region 116 facing away from the vortex disk 12. The air guide groove 114 is connected to the outer periphery of the sloped region 116 or is disposed adjacent to the sloped region 116. Further alternatively, the air guide slots 114 are disposed between two adjacent ramp regions 116.

It will be appreciated that by providing the sloped region 116 around the vortex disk 12, a smooth transition region may be provided for the gas exiting the vortex disk 12, where the sloped region 116 may assist in rapid and uniform diffusion of the gas exiting the vortex disk 12, but where the gas guide slots 114 are not provided, interference of the gas may be easily generated between two adjacent sloped regions 116 due to the close distance. In this embodiment, the air guide groove 114 is disposed on a side of the slope area 116 facing away from the vortex disk 12, and the air guide groove 114 and the slope area 116 are designed to cooperate with each other, so as to jointly realize uniform and rapid diffusion of the gas on the surface of the mechanical arm 10. The presence of the sloped region 116 provides a diffusion space for the gas, while the presence of the gas guide slots 114 ensures an orderly flow of the gas and reduces or avoids the impact of gas interference on the adsorption of the wafer 20.

Please refer to fig. 6. Along the first direction Y, the vortex disk 12 has a maximum width D ₁ and the ramp region 116 has a maximum width D ₂, wherein D ₂≥D₁.

Alternatively, the maximum width D ₁ may be understood as a maximum distance value between any two points of the vortex disk 12 along the first direction.

Optionally, the vortex disk 12 is circular or approximately circular in shape. The maximum width D ₁ is understood to be the diameter of the vortex disk 12.

Alternatively, the maximum width D ₂ may be understood as a maximum distance value between any two points along the first direction in the sloped region 116. It is also understood that the outer periphery of the vortex disk 12 is directed to the outer periphery of the ramp region 116 by a distance value.

Optionally, the ratio D ₂：D₁ between the maximum width D ₁ of the vortex disk 12 and the maximum width D ₂ of the ramp region 116 includes, but is not limited to, 1:1, or 1.1:1, or 1.2:1, or 1.3:1, or 1.4:1, or 1.5:1, or other values, etc., as long as D ₂≥D₁ is satisfied.

Optionally, a maximum width D ₂ of the ramp region 116 is greater than or equal to a maximum width D ₁ of the vortex disk 12. In this embodiment, the maximum width of the slope 116 is equal to or greater than the maximum width of the vortex plate 12, so as to ensure that the gas exiting from the vortex plate 12 has enough space to diffuse. Since the width of the slope area 116 is sufficient, the gas flow on the surface of the arm body 11 becomes more uniform, the formation of a significant pressure gradient between the vortex plates 12 is avoided, and the uneven adsorption or vibration of the wafer 20 caused by the pressure fluctuation is reduced, so that the gas can be sufficiently diffused and the uniformity of the pressure distribution is maintained, thereby enabling the wafer 20 to be more stably adsorbed on the arm body 11. And the width setting of the slope area 116 also has a certain dynamic adaptability, when the mechanical arm 10 moves or is subject to external disturbance, the slope area 116 can further promote the flow and diffusion of the gas, so as to enhance the position stability of the wafer 20 on the arm body 11 and promote the transportation stability and accuracy of the mechanical arm 10.

Please refer to fig. 7 and 9. The arm body 11 has a central axis 115, the arm body 11 is symmetrically disposed about the central axis 115, the plurality of vortex plates 12 includes two vortex plate groups 121 symmetrically disposed about the central axis 115, the vortex plate groups 121 include a first vortex plate 1211, a second vortex plate 1212 and a third vortex plate 1213 disposed at intervals, the plurality of slope regions 116 have a first slope region 1161, a second slope region 1162 and a third slope region 1163 disposed at intervals, the first slope region 1161 is disposed around the periphery of the first vortex plate 1211, the second slope region 1162 is disposed around the periphery of the second vortex plate 1212, and the third slope region 1163 is disposed around the periphery of the third vortex plate 1213. The air guide groove 114 includes a first sub-groove 1141, a second sub-groove 1142, and a third sub-groove 1143, where the first sub-groove 1141 is at least partially disposed opposite to the first slope region 1161, the second sub-groove 1142 is at least partially disposed opposite to the second slope region 1162, and the third sub-groove 1143 is at least partially disposed opposite to the third slope region 1163.

Optionally, the central axis 115 of the arm body 11 is perpendicular to the arrangement direction of the bearing surface 111 and the bottom surface of the arm body 11.

Optionally, the arm body 11 is symmetrically disposed about the central axis 115, and the air path 112 of the arm body 11 is also symmetrically disposed about the central axis 115. The two vortex plate groups 121 are symmetrically disposed about the central axis 115 so that the plurality of vortex plates 12 can have a uniform adsorption state to the wafer 20.

Optionally, each vortex disk group 121 includes a first vortex disk 1211, a second vortex disk 1212, and a third vortex disk 1213 that are disposed at intervals, and a distance value between a center point of the first vortex disk 1211 and a center point of the second vortex disk 1212 is equal to a distance value between a center point of the second vortex disk 1212 and a center point of the third vortex disk 1213.

Optionally, the plurality of ramp regions 116 are disposed in a one-to-one correspondence with the plurality of vortex plates 12. Specifically, the plurality of ramp regions 116 have a first ramp region 1161, a second ramp region 1162, and a third ramp region 1163 that are disposed at intervals, the first ramp region 1161 is disposed around the first vortex disk 1211, and the first vortex disk 1211 is disposed adjacent to a center point of the first ramp region 1161. The second ramp region 1162 surrounds the second vortex plate 1212 at its periphery, and the second vortex plate 1212 is disposed adjacent to the center point of the second ramp region 1162. The third slope zone 1163 is disposed around the peripheral side of the third vortex plate 1213, and the third vortex plate 1213 is disposed adjacent to the center point of the third slope zone 1163.

Optionally, a minimum distance value between the first slope region 1161 and the second slope region 1162 is equal to a minimum distance value between the second slope region 1162 and the third slope region 1163, so that the robot arm 10 can have a uniform adsorption state to the wafer 20.

Alternatively, the number of the air guide grooves 114 is two, and the two air guide grooves 114 are symmetrically disposed about the central axis 115 of the arm body 11. Each of the air guide slots 114 includes a first sub-slot 1141, a second sub-slot 1142, and a third sub-slot 1143. The first sub-slot 1141, the second sub-slot 1142 and the third sub-slot 1143 are independent of each other or are communicated with each other.

Optionally, the first subslot 1141 is disposed at least partially opposite the first ramp region 1161, and it is understood that a peripheral side surface of the first subslot 1141 is disposed at least partially opposite an outer periphery of the first ramp region 1161. The second subslot 1142 is disposed at least partially opposite the second sloped region 1162, and it is understood that the peripheral side of the second subslot 1142 is disposed at least partially opposite the outer periphery of the second sloped region 1162. The third sub-groove 1143 is disposed at least partially opposite to the third slope region 1163, and it is understood that the circumferential side surface of the third sub-groove 1143 is disposed at least partially opposite to the outer circumference of the third slope region 1163.

In the present embodiment, when the gas emitted from the vortex disk 12 in the robot arm 10 diffuses from the slope area 116 to the periphery, during the diffusion process, a gas interference effect may occur between adjacent slope areas 116. The air guide groove 114 is configured such that the first sub-groove 1141 faces the first slope area 1161, the second sub-groove 1142 faces the second slope area 1162, and the third sub-groove 1143 faces the third slope area 1163, so that the air diffused by the plurality of slope areas 116 can flow along the extending directions of the first sub-groove 1141, the second sub-groove 1142 and the third sub-groove 1143, thereby realizing the air guiding of the air emitted from different vortex plates 12 and the slope areas 116, and better controlling the flowing direction and speed of the air. The first sub-slot 1141, the second sub-slot 1142 and the third sub-slot 1143 in the air guide slot 114 guide the diffusion air in the first slope area 1161, the second slope area 1162 and the third slope area 1163, so that the air on the surface of the arm body 11 can flow more orderly, and the problem that the air diffused in the adjacent slope areas 116 collide or mix with each other, thereby causing pressure fluctuation and unstable adsorption of the wafer 20 due to air interference, is avoided.

Optionally, the maximum depth of the air guiding groove 114 includes, but is not limited to, 1.0mm, or 1.1 mm, or 1.2 mm, or 1.3 mm, or 1.4 mm, or 1.5 mm, or 1.8 mm, or 2.0 mm, or 2.1mm, or 2.2mm, or 2.5mm, or other values, as long as the depth of the air guiding groove 114 is 1.0 mm-2.5 mm. The maximum width of the first sub-slot 1141 includes, but is not limited to, 5mm, or 6mm, or 7mm, or 8mm, or 9mm, or 10mm, or 11 mm, or 12mm, or 13mm, or 14mm, or 15mm, or other values, etc., as long as 5mm to 15mm is satisfied. The maximum width of the second sub-slot 1142 is 5mm, or 6mm, or 7mm, or 8mm, or 9mm, or 10mm, or 11 mm, or 12mm, or 13mm, or 14mm, or 15mm, or other values, etc., as long as 5mm to 15mm is satisfied. The maximum width of the third sub-slot 1143 is 5mm, or 6mm, or 7mm, or 8mm, or 9mm, or 10mm, or 11 mm, or 12mm, or 13mm, or 14mm, or 15mm, or other values, etc., so long as 5 mm-15 mm is satisfied, so that the air guide slot 114 has a proper width and depth to adapt to the flow of the air on the surface of the arm body 11, and the flow rate of the air can be controlled while avoiding the air interference generated by the arm body 11, so as to ensure that the air does not flow out from the surface of the mechanical arm 10 too quickly, thereby ensuring the stability and good adsorption effect of the mechanical arm 10 on the wafer 20.

Please refer to fig. 8. The first sub-slot 1141, the second sub-slot 1142, and the third sub-slot 1143 are disposed at intervals, the first sub-slot 1141 has a first arc portion 114a and a first dc portion 114b connected to each other, the first arc portion 114a is disposed opposite to a peripheral side surface of the first vortex disk 1211, the first arc portion 114a is attached to the first slope area 1161, and the first dc portion 114b is communicated to an outer peripheral side of the arm body 11. The second sub-slot 1142 has a second arc portion 114c and a second dc portion 114d, where the second arc portion 114c is disposed opposite to the peripheral side of the second vortex disk 1212, the second arc portion 114c is attached to the second slope area 1162, and the second dc portion 114d is communicated with the peripheral side of the arm body 11. The third sub-slot 1143 has a third dc portion 114e, the third dc portion 114e is disposed opposite to the peripheral side surface of the third vortex plate 1213, the third dc portion 114e is disposed at intervals in the third slope area 1163, and the third dc portion 114e is communicated with the outer peripheral side of the arm body 11.

Optionally, in an alternative embodiment of the present application, the first sub-slot 1141, the second sub-slot 1142 and the third sub-slot 1143 are independent and are spaced apart from each other.

Optionally, the first sub-slot 1141 has a first arc portion 114a and a first dc portion 114b that are in communication with each other. The first arc-shaped portion 114a is disposed opposite to the peripheral side surface of the first vortex disk 1211, and the first arc-shaped portion 114a is attached to the first slope zone 1161.

Optionally, the curvature of the first arc-shaped portion 114a is equal to or similar to the curvature of the outer periphery of the first vortex disk 1211, and the curvature of the first arc-shaped portion 114a is equal to or similar to the curvature of the outer periphery of the first slope zone 1161, so that the gas exiting from the slope zone 116 can smoothly flow along the first arc-shaped portion 114a, and turbulence and disturbance of the gas are reduced. And the curvature of the first arcuate portion 114a in unison with the first ramp region 1161 also helps to maintain a gas flow path, thereby enhancing the stability and uniformity of gas flow.

Optionally, the arm body has a first side 117 and a second side 118 symmetrically disposed along the central axis 115, and the extending direction of the first dc portion 114b is the arrangement direction of the first side 117 and the second side 118.

Optionally, the first dc portion 114b is connected to the outer peripheral side of the arm body 11, so that part of the gas can flow to the outside of the arm body 11 through the first sub-slot 1141, thereby avoiding gas interference caused by the gas layer on the surface of the arm body 11.

Optionally, the second sub-slot 1142 has a second arc portion 114c and a second dc portion 114d that are mutually communicated. The second arc-shaped portion 114c is disposed opposite to the peripheral side surface of the second vortex plate 1212, and the second arc-shaped portion 114c is attached to the second slope zone 1162.

Optionally, the curvature of the second arcuate portion 114c is equal to or approximates the curvature of the outer periphery of the second vortex disk 1212, and the curvature of the second arcuate portion 114c is equal to or approximates the curvature of the outer periphery of the second ramp region 1162, thereby enabling the gas exiting the ramp region 116 to smoothly flow along the second arcuate portion 114c, reducing turbulence and disturbance of the gas. And the curvature of the second arcuate portion 114c in unison with the second sloped region 1162 also helps maintain the flow path of the gas, thereby enhancing the stability and uniformity of the gas flow.

Optionally, the extending direction of the second dc portion 114d is the arrangement direction of the first edge 117 and the second edge 118.

Optionally, the second dc portion 114d is connected to the outer peripheral side of the arm body 11, so that part of the gas can flow to the outside of the arm body 11 through the second sub-slot 1142, thereby avoiding gas interference generated by the gas layer on the surface of the arm body 11.

Optionally, the third sub-slot 1143 has a third dc portion 114e, where the third dc portion 114e is disposed opposite to the peripheral side surface of the third vortex disk 1213, the third dc portion 114e is disposed at intervals in the third slope area 1163, and the third dc portion 114e is communicated with the outer peripheral side of the arm body 11, so that part of the gas can circulate to the outside of the arm body 11 through the third sub-slot 1143, and it is ensured that the gas flows according to a predetermined path, thereby more effectively guiding and controlling the diffusion of the gas, and avoiding the gas interference generated by the gas layer on the surface of the arm body 11.

Optionally, the extending direction of the third dc portion 114e is the arrangement direction of the first edge 117 and the second edge 118.

Alternatively, the first dc portion 114b is connected to the outer peripheral side of the arm body through an arc angle, the second dc portion 114d is connected to the outer peripheral side of the arm body through an arc angle, and the third dc portion 114e is connected to the outer peripheral side of the arm body through an arc angle, so that it is ensured that the gas can smoothly flow along the gas guide groove 114 to the outside of the arm body 11.

Optionally, the minimum distance between the third sub-slot 1143 and the third slope region 1163 includes, but is not limited to, 35.5mm, 37.5mm, 39.5mm, 41.5mm, 43.5mm, 45.5mm, 47.5mm, 49.5mm, or other values, so long as the distance between the third sub-slot 1143 and the third slope region 1163 is 35.5mm to 49.5mm, so that the air guide slot 114 can effectively guide the air exiting from the third slope region 1163, avoid the air interference of the air flow layer between the arm body 11 and the wafer 20, and can satisfy the effective adsorption state of the arm body 11 on the wafer 20.

Please refer to fig. 9 and 10. The first sub-slot 1141, the second sub-slot 1142, and the third sub-slot 1143 are mutually communicated, one end of the first sub-slot 1141 is disposed opposite to the peripheral side surface of the first vortex disk 1211, the first sub-slot 1141 further has a first arc-shaped edge 114f, and the first arc-shaped edge 114f surrounds the third slope area 1163 and is disposed opposite to the third slope area 1163. One end of the second sub-slot 1142 is disposed opposite to the peripheral side surface of the second vortex plate 1212, the second sub-slot 1142 further has a second arc edge 114g, and the second arc edge 114g surrounds the third slope region 1163 and is disposed opposite to the third slope region 1163. The third sub-slot 1143 is disposed on a side of the first sub-slot 1141 away from the third slope area 1163 and the second sub-slot 1142, and the third sub-slot 1143 is communicated with an outer peripheral side of the arm body 11.

Optionally, in another alternative embodiment of the present application, the first sub-slot 1141, the second sub-slot 1142 and the third sub-slot 1143 are integrally formed and are mutually communicated.

Optionally, the first subslot 1141 is partially disposed between the first sloped region 1161 and the third sloped region 1163. One end of the first sub-groove 1141 is disposed opposite to the circumferential side of the first vortex disk 1211 and opposite to the outer circumference of the first slope zone 1161, so that the gas diffused from the first slope zone 1161 can partially flow to the outside of the arm body 11 through the first sub-groove 1141.

Optionally, the first sub-slot 1141 further has a first arcuate edge 114f, and the first arcuate edge 114f surrounds the third ramp region 1163 and is disposed opposite to the third ramp region 1163. The curvature of the first arc-shaped edge 114f is equal to or similar to the curvature of the outer periphery of the third vortex disk 1213, and the curvature of the first arc-shaped edge 114f is equal to or similar to the curvature of the outer periphery of the third slope region 1163, so that the gas exiting from the third slope region 1163 can smoothly flow along the diversion trench, and turbulence and disturbance of the gas are reduced. The curvature of the first arcuate edge 114f in unison with the third ramp region 1163 also helps to maintain a gas flow path, thereby enhancing the stability and uniformity of gas flow.

Optionally, the second subslot 1142 is partially disposed between the second sloped region 1162 and the third sloped region 1163. One end of the second sub-groove 1142 is disposed opposite to the circumferential side of the second vortex plate 1212 and opposite to the outer circumference of the second slope zone 1162, so that the gas diffused from the second slope zone 1162 can partially flow to the outside of the arm body 11 through the second sub-groove 1142.

Optionally, the second sub-slot 1142 further has a second arcuate edge 114g, where the second arcuate edge 114g surrounds the third ramp region 1163 and is disposed opposite the third ramp region 1163. The curvature of the second arc-shaped edge 114g is equal to or similar to the curvature of the outer periphery of the third vortex disk 1213, and the curvature of the second arc-shaped edge 114g is equal to or similar to the curvature of the outer periphery of the third slope region 1163, so that the gas exiting from the third slope region 1163 can smoothly flow along the diversion trench, and turbulence and disturbance of the gas are reduced. The curvature of the second arcuate edge 114g in concert with the third ramp region 1163 also helps maintain a gas flow path, thereby enhancing the stability and uniformity of gas flow.

Optionally, the third sub-slot 1143 is disposed on a side of the first sub-slot 1141 away from the third slope area 1163, and the third sub-slot 1143 is communicated with an outer peripheral side of the arm body 11.

Optionally, the extending direction of the third dc portion 114e is the arrangement direction of the first edge 117 and the second edge 118. The third dc portion 114e is connected to the outer peripheral side of the arm body 11, so that part of the gas can flow to the outside of the arm body 11 through the gas guide slot 114, and the gas can flow along a predetermined path, thereby more effectively guiding and controlling the diffusion of the gas, and avoiding the gas interference generated by the gas layer on the surface of the arm body 11.

Alternatively, the third direct current part 114e is connected to the outer circumferential side of the arm body through an arc angle, thereby ensuring that the gas can smoothly flow along the gas guide groove 114 to the outside of the arm body 11.

Please refer to fig. 11. Along the arrangement direction of the first subslot 1141 and the second subslot 1142, the third vortex disk 1213 has a maximum width D ₃, and the third subslot 1143 has a maximum width D ₄, where D ₄≥D₃.

Optionally, the maximum width D ₃ may be understood as a maximum distance value between any two points on the third vortex disk 1213 along the arrangement direction of the first sub-slot 1141 and the second sub-slot 1142. It is also understood that the diameter of the third vortex plate 1213 is sized.

Optionally, the third sub-slot 1143 has a maximum width D ₄, which is understood as a maximum distance value between any two points on the third sub-slot 1143 along the arrangement direction of the first sub-slot 1141 and the second sub-slot 1142.

In this embodiment, the maximum width D ₄ of the third sub-slot 1143 is greater than or equal to the maximum width D ₃ of the third vortex disk 1213, so that the gas flowing out of the third vortex disk 1213 can be sufficiently guided and controlled by the gas guiding slot 114, so that the gas emitted from the third vortex disk 1213 can be at least partially uniformly and stably guided to the outside of the arm body 11, thereby further ensuring that the gas interference between the gas flow layer between the arm body 11 and the wafer 20 is not generated, and further enabling the robot arm 10 to stably and accurately transport the wafer 20.

Please refer to fig. 12. The surface of the bearing surface 111 forming the air guide groove 114 further has a plurality of flow channels 1111, the plurality of flow channels 1111 extend along the direction of the vortex disk 12 pointing to the air guide groove 114, and the plurality of flow channels 1111 are arranged at intervals.

Optionally, the flow channel 1111 is fixed to the bearing surface 111, or directly machined through the bearing surface 111. Optionally, the flow channel 1111 is a groove formed on the bearing surface 111, or a baffle protruding from the bearing surface 111.

Alternatively, the number of the flow channels 1111 may include, but is not limited to, two, or three, or four, or five, or other greater number, etc., and the plurality of flow channels 1111 may be spaced apart from one another.

Optionally, the plurality of flow channels 1111 extend along the direction of the vortex plate 12 pointing to the air guide groove 114, specifically, a part of the flow channels 1111 extend along the direction of the first vortex plate 1211 pointing to the first sub-groove 1141, a part of the flow channels 1111 extend along the direction of the second vortex plate 1212 pointing to the second sub-groove 1142, and a part of the flow channels 1111 extend along the direction of the third vortex plate 1213 pointing to the third sub-groove 1143.

Preferably, among the plurality of flow channels 1111, the extension arc of the partial flow channels 1111 is consistent with the curvature arc of the periphery of the ramp region 116.

In this embodiment, by the arrangement of the plurality of runners 1111, it can be ensured that the air guide groove 114 has a sufficient and effective air guide effect on the gas diffusing in the slope area 116, so that the gas is smoother in the flowing process, and the flow path of the gas is maintained, thereby enhancing the stability and uniformity of the gas flow, and keeping the stable state of the air flow layer between the arm body 11 and the wafer 20.

Please refer to fig. 13. The vortex disk 12 includes a supporting portion 122, a body portion 123 and a peripheral portion 124 which are sequentially bent and connected, the supporting portion 122 is in contact with the arm body 11, the body portion 123 and the arm body 11 are arranged at intervals, the body portion 123 is at least partially opposite to the air hole 113, the peripheral portion 124 and the supporting portion 122 are arranged on the same side of the body portion 123, the peripheral portion 124 and the arm body 11 are arranged at intervals, a gap is formed between the peripheral portion 124 and the arm body 11, a minimum distance H ₁ is formed between the peripheral portion 124 and the arm body 11, and a minimum distance H ₂ is formed between the body portion 123 and the arm body 11, wherein H ₁＜H₂.

Optionally, the abutting portion 122, the body portion 123 and the peripheral portion 124 are integrally formed.

Optionally, the arm body 11 has a protruding portion 119, the protruding portion 119 is disposed on a side of the abutting portion 122 facing away from the peripheral portion 124, and the abutting portion 122 abuts against the protruding portion 119 of the arm body 11.

Optionally, the body 123 is spaced from the arm body 11, and the body 123 is disposed on a side of the bearing surface 111 away from the air path 112.

Optionally, the body 123 at least partially faces the air hole 113, which is understood that the front projection of the body 123 on the bearing surface 111 covers the air hole 113.

Alternatively, the peripheral portion 124 and the abutting portion 122 are disposed on the same side of the body portion 123, that is, the peripheral portion 124 and the abutting portion 122 are disposed on a side of the body portion 123 adjacent to the bearing surface 111. The peripheral portion 124 is disposed on a side of the abutting portion 122 facing away from the protruding portion 119, and a gap is formed between the peripheral portion 124 and the arm body 11, and the gap is used for emitting gas from the slope region 116.

Alternatively, the minimum distance H ₁ may be understood as the minimum distance between any point on the peripheral side portion 124 and any point on the carrying surface 111 of the arm body 11. The minimum distance H ₂ is understood to be the minimum distance between any point of the body 123 and the diameter of any point on the carrying surface 111 of the arm body 11. In this embodiment, H ₁＜H₂ enables the vortex gas to be formed in the vortex disk 12, and accelerates the gas to flow out of the gap, thereby improving the uniformity and speed of the gas flow.

Preferably, the thickness of the peripheral portion 124 gradually increases along the arrangement direction of the abutting portion 122 and the peripheral portion 124, in other words, the distance between the peripheral portion 124 and the bearing surface 111 gradually decreases. Therefore, the gas exiting from the plurality of gas holes 113 into the vortex disk 12 can form a vortex, and then exit from the gap, so that the vortex disk 12 can effectively improve the utilization efficiency of the gas, and the gas can be rapidly and uniformly diffused into the slope area 116 under the condition of small gas flow.

Please refer to fig. 14, 15 and 16. The mechanical arm 10 is further provided with a first limiting column 13, a second limiting column 14, a third limiting column 15 and a fourth limiting column 16. The mechanical arm 10 has a third side and a fourth side along the extending direction of the arm body 11, the first limiting post 13 and the second limiting post 14 are disposed adjacent to the third side, and the first limiting post 13 and the second limiting post 14 are symmetrically disposed about a central axis 115 of the arm body 11. The third limiting post 15 and the fourth limiting post 16 are disposed adjacent to the fourth side, and the third limiting post 15 and the fourth limiting post 16 are symmetrically disposed about a central axis 115 of the arm body 11.

In this embodiment, when the robot arm 10 is used for transporting the wafer 20, the wafer 20 is in a suspended state with respect to the robot arm 10, and the first, second, third and fourth spacing posts 13, 14, 15 and 16 can clamp opposite sides of the wafer 20 and limit the wafer 20.

Optionally, the mechanical arm 10 is further provided with an adjusting assembly 17, the adjusting assembly 17 includes an air cylinder 171, a guide rod 172, a movable plate 173 and a fixed plate 174, one end of the guide rod 172 is connected to the air cylinder 171 and can stretch and retract under the driving of the air cylinder 171, and the other end of the guide rod 172 is connected to the movable plate 173 and can drive the movable plate 173 to reciprocate along the extending direction of the arm body 11. One end of the movable plate 173 is connected to the guide rod 172, the other end of the movable plate 173 is movably connected to the fixed plate 174, one end of the fixed plate 174 is connected to the third limit post 15, and the other end of the fixed plate 174 is connected to the fourth limit post 16. Through the adjusting component 17, the movement positions of the third limiting column 15 and the fourth limiting column 16 can be adjusted, so that the clamping force of the third limiting column and the fourth limiting column to the wafer 20 can be adjusted, and the wafer 20 can be prevented from being cracked or wrinkled due to overlarge clamping force.

Please refer to fig. 17. The application also provides a probe station 1, wherein the probe station 1 comprises the mechanical arm 10.

Optionally, the probe station 1 includes a mechanical arm 10, a material box, a test station, and the like. The robot arm 10 can take out the wafer 20 to be inspected from the material box, and can transport and inspect the wafer 20 to be inspected to the test bench. The robot 10 is also capable of removing the inspected wafer 20 from the test station and returning the wafer 20 to the cassette.

The probe station 1 includes, but is not limited to, integrated with electrical, optical, microwave, etc. testing functions. And the probe station 1 may be, but is not limited to, a semi-automatic probe station or a fully-automatic probe station.

Optionally, the probe station 1 includes control/test software, a stage (Chuck) control system, a probe test system, a vision/optics assembly, a shielding assembly, and a vibration isolation system. Optionally, the probe station 1 may perform characteristic analysis of I-V, C-V, optical signals, RF, 1/F noise, etc. on a Wafer 20 (Wafer) or other components.

Specifically, in the working process of the probe station 1, pins (pads) of a sample of the wafer 20 can be measured through a probe or a probe card, electrical signals are loaded and measured through a connection test instrument, the electrical signals are controlled, judged and stored at a software end, judgment information is fed back to an inkjet system, and defective grains (die) on the wafer 20 are marked by dotting. After the test of one defective grain (die) is finished, the stage (Chuck) mechanical platform is moved to the next grain (die) to be tested through the software control system, and the cyclic test is sequentially carried out.

The probe station 1 may be, but is not limited to, inspecting wafers 20 having dimensions of 12 inches, 8 inches, 6 inches, or other dimensions. Optionally, the probe station 1 may also perform performance test for chips made of various materials such as silicon (Si), gallium nitride (GaN), silicon carbide (SiC), and the like.

The probe station 1 may be, but is not limited to, a probe suitable for a wafer 20, or a Micro-Electro-MECHANICAL SYSTEM, MEMS system, or a biological structure, or a photoelectric device, or a Light Emitting Diode (LED), or a Liquid crystal display (Liquid CRYSTAL DISPLAY, LCD), or a solar cell.

Optionally, the working temperature of the probe station 1 is-60 ℃ to 300 ℃. Further alternatively, the probe station 1 may also be loaded with a temperature control system to meet performance test requirements in high and low temperature environments.

In this embodiment, the mechanical arm 10 can maintain a stable adsorption environment for the wafer 20, so as to avoid the situation that the wafer 20 is deviated or falls off when the mechanical arm 10 moves rapidly or is disturbed externally, improve the transportation accuracy and stability of the mechanical arm 10 for the ultrathin wafer 20, and further ensure the reliability of the operation process of the probe station 1.

Reference in the specification to "an embodiment," "implementation" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the described embodiments of the application may be combined with other embodiments. Furthermore, it should be understood that the features, structures or characteristics described in the embodiments of the present application may be combined arbitrarily without any conflict with each other, to form yet another embodiment without departing from the spirit and scope of the present application.

Finally, it should be noted that the above-mentioned embodiments are merely for illustrating the technical solution of the present application and not for limiting the same, and although the present application has been described in detail with reference to the above-mentioned preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present application without departing from the spirit and scope of the technical solution of the present application.

Claims

1. A robotic arm, the robotic arm comprising:

The arm body is also provided with an air guide groove, the air guide groove is exposed on the bearing surface and is used for guiding at least part of air emitted by the air hole to the outside of the arm body;

The bearing surface is provided with a plurality of slope areas, the slope areas are arranged on the periphery of the vortex disc in a surrounding mode, the arm body is further provided with a bottom surface which is arranged opposite to the bearing surface, the distance between the slope areas and the bottom surface is gradually increased along a first direction, the first direction is the direction that the vortex disc points to the slope areas, and the air guide groove is arranged on one side, away from the vortex disc, of the slope areas;

in the first direction, the vortex disk has a maximum width D ₁, the ramp region has a maximum width D ₂, wherein D ₂≥D₁;

2. The mechanical arm according to claim 1, wherein the arm body has a central axis, the arm body is symmetrically disposed about the central axis, the plurality of vortex disks includes two vortex disk groups symmetrically disposed about the central axis, the vortex disk groups include a first vortex disk, a second vortex disk and a third vortex disk disposed at intervals, the plurality of slope regions have a first slope region, a second slope region and a third slope region disposed at intervals, the first slope region is disposed around the first vortex disk, the second slope region is disposed around the second vortex disk, and the third slope region is disposed around the third vortex disk; the air guide groove comprises a first subslot, a second subslot and a third subslot, wherein the first subslot is at least partially opposite to the first slope area, the second subslot is at least partially opposite to the second slope area, and the third subslot is at least partially opposite to the third slope area.

3. The mechanical arm according to claim 2, wherein the first sub-slot, the second sub-slot and the third sub-slot are arranged at intervals, the first sub-slot is provided with a first arc-shaped part and a first direct current part which are connected, the first arc-shaped part is arranged opposite to the peripheral side surface of the first vortex disk, the first arc-shaped part is attached to the first slope area, and the first direct current part is communicated with the peripheral side of the arm body;

4. The mechanical arm according to claim 2, wherein the first sub-groove, the second sub-groove and the third sub-groove are mutually communicated, one end of the first sub-groove is opposite to the peripheral side surface of the first vortex disk, the first sub-groove is further provided with a first arc-shaped edge, and the first arc-shaped edge surrounds the third slope area and is opposite to the third slope area;

5. The robotic arm of claim 2, wherein the third vortex disk has a maximum width D ₃ along the direction of arrangement of the first subslot and the second subslot, the third subslot having a maximum width D ₄, wherein D ₄≥D₃.

6. The robot arm of claim 1, wherein the surface of the bearing surface forming the air guide slot further has a plurality of flow channels extending along the direction of the vortex disk toward the air guide slot, and the plurality of flow channels are disposed at intervals from each other.

7. A probe station, characterized in that it comprises a robot arm according to any one of claims 1-6.