CN118002547A - Chemical residue removal process for high-purity alumina thimble-like component - Google Patents
Chemical residue removal process for high-purity alumina thimble-like component Download PDFInfo
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- CN118002547A CN118002547A CN202311413890.4A CN202311413890A CN118002547A CN 118002547 A CN118002547 A CN 118002547A CN 202311413890 A CN202311413890 A CN 202311413890A CN 118002547 A CN118002547 A CN 118002547A
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- cleaning
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- 120min
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- components
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000126 substance Substances 0.000 title claims abstract description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 75
- 238000001035 drying Methods 0.000 claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 7
- 231100000719 pollutant Toxicity 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 58
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 18
- 239000004809 Teflon Substances 0.000 claims description 12
- 229920006362 Teflon® Polymers 0.000 claims description 12
- 239000004744 fabric Substances 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 7
- 230000007547 defect Effects 0.000 claims description 6
- 230000007613 environmental effect Effects 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 210000004243 sweat Anatomy 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 7
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 4
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000002344 surface layer Substances 0.000 abstract description 2
- 238000004506 ultrasonic cleaning Methods 0.000 abstract description 2
- 239000013072 incoming material Substances 0.000 abstract 1
- 238000007781 pre-processing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention relates to a process for removing chemical residues of high-purity alumina ejector pin components, which comprises the following steps: 1) checking the incoming materials of the components, 2) preprocessing the components, 3) cleaning the components, 4) cleaning the components, 5) cleaning the components, 6) drying the components in a detected oven, 7) baking the components to 1000 ℃ at high temperature and reducing the temperature to 60 ℃, 8) drying the components in the detected oven after baking the components at high temperature, and 10) vacuum antistatic packaging the final components. Compared with the existing cleaning process, the invention increases ultrasonic cleaning with different frequencies, and compared with the existing process for cleaning the thimble products made of the ceramic materials, the shallow surface layer particle pollutants with different particle diameters are removed more specifically. And compared with the traditional cleaning, the cleaning and detection process of the oven is added, the cleanliness of the interior of the equipment in the cleaning process and the diffusion of residues to the interior of the parts in the baking process are controlled, and the pollution to the parts is caused.
Description
Technical Field
The invention relates to the technical field of chemical vapor deposition precision part residue removal, and aims at a key core part for supporting a wafer in chemical vapor deposition equipment, and a high-purity alumina thimble part chemical residue removal process is adopted.
Background
Introducing one or more gases into the chemical vapor deposition vacuum chamber, and generating a solid or a plurality of gases of the solid at a specific temperature, wherein the solid is directly deposited on the surface of the wafer to form a film, and the introduced residual gases and the formed one or more gases are pumped out, so that the cleanliness of the surfaces of parts in the vacuum chamber is ensured in the process, and other particles are prevented from falling into the wafer to pollute the wafer.
The thimble type products of the wafer carried in the chemical vapor deposition vacuum chamber of the wafer factory are high-purity alumina ceramic materials, at present, after cleaning by domestic manufacturers, chemical residue problems exist, as the inside of the high-purity alumina ceramic materials is of a pore structure, after chemical cleaning, chemical residue exists in the ceramic materials, the existing cleaning process can only clean pollutants on the surfaces of the products, the chemical residue absorbed by the pores in the materials cannot be cleaned, in the process of using the wafer factory, the chemical residue is separated out and reacts with the produced gas to generate pollutant particles, and after the particles fall on the surfaces of the wafers, the wafers are polluted, so that the wafer yield is reduced, and the wafers are scrapped in severe cases.
The application can solve the problems by removing the chemical residue process, and improves the pollution caused by the chemical residue problem of the thimble component in the production process of the wafer.
Disclosure of Invention
The invention aims to solve the problem of pollution caused by chemical residues in the wafer manufacturing process, wherein the chemical residues are in contact with the thimble component and the wafer in the wafer manufacturing process.
The technical scheme adopted by the invention is as follows:
the process for removing the chemical residues of the high-purity alumina thimble-like component is characterized by comprising the following steps:
1) Checking the material of the part, and visually checking whether defects such as defects, cracks and the like exist on the surface of the part by using a strong light flashlight and a magnifying glass;
2) The pretreatment of the component, which uses IPA to integrally wipe the surface, ensures that the surface of the component is free of fingerprint, sweat and other pollutants;
3) Cleaning the parts, namely immersing the parts into low-frequency ultrasonic waves, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 20-28KHz, dynamic overflow water: 6-18L/min, wherein the resistance value of pure water is equal to or more than 1MΩ of the overflow water outlet;
4) Cleaning the parts, namely immersing the parts into medium-frequency ultrasonic waves, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 28-40KHz, dynamic overflow water: 6-18L/min, wherein the resistance value of pure water is equal to or more than 2MΩ of the overflow water outlet;
5) Cleaning the parts, namely immersing the parts into high-frequency ultrasonic waves, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 132-168KHz, dynamic overflow water: 6-18L/min, wherein the resistance value of pure water is equal to or more than 4MΩ of the overflow water outlet;
6) Placing the component in a detected oven for drying;
7) In the process of baking at high temperature to 1000 ℃ and reducing to 60 ℃, the temperature is controlled as follows:
Heating at 0-200deg.C;
The required time is 60-120min at 200-300 ℃;
the time required by 300-400 ℃ is 60-120min;
the time required by 400-500 ℃ is 60-120min;
the time required by 500-500 ℃ is 60-120min;
the time required by 500-600 ℃ is 60-120min;
The required time is 60-120min at 600-700 ℃;
The required time is 60-120min at 700-800 ℃;
the time required by 800-800 ℃ is 60-120min;
the time required by 800-900 ℃ is 60-120min;
The required time is 60-120min at 900-1000 ℃;
the time required by 1000-1000 ℃ is 120-180min;
The time required by 1000-800 ℃ is 60-120min;
the time required by 800-600 ℃ is 60-120min;
the time required by 600-400 ℃ is 60-120min;
the time required by 400-200 ℃ is 60-120min;
Naturally cooling at 200-60deg.C;
8) Immersing the component into high-frequency ultrasonic waves after high-temperature baking, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 132-168KHz, dynamic overflow water: 6-18L/min, the resistance value of pure water is equal to or more than 4MΩ of overflow water outlet, environmental requirement: a 100-10 class clean room;
9) The parts were placed in a tested oven for drying, environmental requirements: a 100-10 class clean room;
10 Vacuum antistatic packaging of the final part.
The 6) part is placed in a detected oven for drying, and the oven is cleaned before drying;
And the oven cleaning step comprises that ① dust-free cloth is dipped in IPA to wipe the inner container and the Teflon material tool, ② dust-free cloth is dipped in 2% -10% MOS-grade nitric acid to wipe the inner container and the Teflon material tool, and ③ pure water is dipped in the dust-free cloth to wipe the inner container and the Teflon material tool.
Detecting an oven after cleaning, wherein the step of detecting the oven comprises the following steps: ① Preparing two brand-new silicon wafers in the same box, taking one of the brand-new silicon wafers ② out, placing the brand-new silicon wafers on a tool in an oven, marking the brand-new silicon wafer A, taking one of the brand-new silicon wafers as a reference silicon wafer, not performing any operation in the box, marking the brand-new silicon wafer B, starting the oven with the ③, setting the temperature to be 105-150 ℃, starting timing when the temperature in the oven reaches 105 ℃, baking for 2-4 hours, naturally cooling ④ to room temperature, taking out the silicon wafers A in the oven, ⑤ for packaging the silicon wafers A and B, detecting, wherein the chemical acid radical residues of the two silicon wafers are above 1.0x10 < -6 >, namely, if the detection of the oven is qualified, repeating the cleaning steps of the oven until the detection of the oven is qualified.
The invention has the advantages that:
1) Compared with the existing cleaning process, the ultrasonic cleaning with different frequencies is added, and compared with the existing process for cleaning the ceramic thimble products, the shallow surface layer particle pollutants with different particle diameters are removed more specifically.
2) And compared with the traditional cleaning, the cleaning and detection process of the oven is added, the cleanliness of the interior of the equipment in the cleaning process and the diffusion of residues to the interior of the parts in the baking process are controlled, and the pollution to the parts is caused.
Drawings
FIG. 1 is a schematic view of a thimble assembly according to the present invention.
FIG. 2 is a schematic view of a wafer carrier with spike components of the present invention.
Detailed Description
The invention is described in further detail below with reference to fig. 1-2. The process for removing chemical residues of the thimble-like component made of high-purity alumina material comprises the following steps: the components and the process flow are as follows: the method comprises the steps of inspecting the materials of the thimble component, wiping by IPA, cleaning by low-frequency ultrasonic waves, cleaning by medium-frequency ultrasonic waves, cleaning by high-frequency ultrasonic waves, drying, baking at high temperature, cleaning by high-frequency ultrasonic waves in a dust-free room, drying by an oven in the dust-free room and packaging the component.
The specific process steps are as follows:
1) Checking the material of the part, and visually checking whether defects such as defects, cracks and the like exist on the surface of the part by using a strong light flashlight and a magnifying glass;
2) The pretreatment of the component uses IPA to wipe the surface as a whole, thereby ensuring that the surface of the component is free of fingerprint, sweat and other pollutants.
3) Cleaning the parts, namely immersing the parts into low-frequency ultrasonic waves, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 20-28KHz, dynamic overflow water: 6-18L/min, wherein the resistance value of pure water is equal to or more than 1MΩ of the overflow water outlet;
4) Cleaning the parts, namely immersing the parts into medium-frequency ultrasonic waves, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 28-40KHz, dynamic overflow water: 6-18L/min, wherein the resistance value of pure water is equal to or more than 2MΩ of the overflow water outlet;
5) Cleaning the parts, namely immersing the parts into high-frequency ultrasonic waves, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 132-168KHz, dynamic overflow water: the resistance value of the pure water is 6-18L/min, and the overflow water outlet is more than or equal to 4MΩ.
6) Placing the component in a detected oven for drying;
the cleaning step of the oven comprises the steps that ① dust-free cloth is dipped in IPA to wipe the inner container and the Teflon material tool, ② dust-free cloth is dipped in 2% -10% MOS-grade nitric acid to wipe the inner container and the Teflon material tool, and ③ pure water is dipped in the dust-free cloth to wipe the inner container and the Teflon material tool;
And (3) an oven detection step: ① Preparing two brand-new silicon wafers in the same box, taking one of the brand-new silicon wafers ② out, placing the brand-new silicon wafers on a tool in an oven, marking the brand-new silicon wafer A, taking one of the brand-new silicon wafers as a reference silicon wafer, performing no operation in the box, marking the brand-new silicon wafer B, starting the oven with ③, setting the temperature to 105-150 ℃, starting timing when the temperature in the oven reaches 105 ℃, baking for 2-4 hours, naturally cooling ④ to room temperature, taking out the silicon wafers A in the oven, ⑤ for packaging the silicon wafers A and B, detecting, wherein the chemical acid radical residues of the two silicon wafers are above 1.0x10 < -6 > times, namely, detecting that the oven is qualified, if the oven is not qualified, repeating the oven cleaning step until the oven is detected to be qualified;
7) In the process of baking at high temperature to 1000 ℃ and reducing to 60 ℃, the temperature is controlled as follows:
Heating at 0-200deg.C;
The required time is 60-120min at 200-300 ℃;
the time required by 300-400 ℃ is 60-120min;
the time required by 400-500 ℃ is 60-120min;
the time required by 500-500 ℃ is 60-120min;
the time required by 500-600 ℃ is 60-120min;
The required time is 60-120min at 600-700 ℃;
The required time is 60-120min at 700-800 ℃;
the time required by 800-800 ℃ is 60-120min;
the time required by 800-900 ℃ is 60-120min;
The required time is 60-120min at 900-1000 ℃;
the time required by 1000-1000 ℃ is 120-180min;
The time required by 1000-800 ℃ is 60-120min;
the time required by 800-600 ℃ is 60-120min;
the time required by 600-400 ℃ is 60-120min;
the time required by 400-200 ℃ is 60-120min;
Naturally cooling at 200-60deg.C;
8) Immersing the component into high-frequency ultrasonic waves after high-temperature baking, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 132-168KHz, dynamic overflow water: 6-18L/min, the resistance value of pure water is equal to or more than 4MΩ of overflow water outlet, environmental requirement: a 100-10 class clean room;
9) Placing the component in a detected oven for drying;
environmental requirements: a 100-10 class clean room;
the cleaning step of the oven comprises the steps that ① dust-free cloth is dipped in IPA to wipe the inner container and the Teflon material tool, ② dust-free cloth is dipped in 2% MOS-grade nitric acid to wipe the inner container and the Teflon material tool, and ③ pure water is dipped in the dust-free cloth to wipe the inner container and the Teflon material tool;
and (3) an oven detection step: ① Preparing two brand-new silicon wafers in the same box, taking one of the brand-new silicon wafers ② out, placing the brand-new silicon wafers on a tool in an oven, marking the brand-new silicon wafer A, taking one of the brand-new silicon wafers as a reference silicon wafer, not performing any operation in the box, marking the brand-new silicon wafer B, starting the oven with the temperature of ③, setting the temperature to be 150-180 ℃, starting timing when the temperature in the oven reaches the set value, baking for 2-5 hours, naturally cooling ④ to room temperature, taking out the silicon wafers A in the oven, ⑤ for packaging the silicon wafers A and B, detecting, wherein the chemical acid radical residues of the two silicon wafers are above 1.0x10-9, namely, the oven is qualified, if the oven is not qualified, repeating the oven cleaning steps until the oven is qualified.
10 Vacuum antistatic packaging of the final part.
Three thimble components are used for bearing the wafer, so that the wafer is transported.
Claims (3)
1. The process for removing the chemical residues of the high-purity alumina thimble-like component is characterized by comprising the following steps:
1) Checking the material of the part, and visually checking whether defects such as defects, cracks and the like exist on the surface of the part by using a strong light flashlight and a magnifying glass;
2) The pretreatment of the component, which uses IPA to integrally wipe the surface, ensures that the surface of the component is free of fingerprint, sweat and other pollutants;
3) Cleaning the parts, namely immersing the parts into low-frequency ultrasonic waves, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 20-28KHz, dynamic overflow water: 6-18L/min, wherein the resistance value of pure water is equal to or more than 1MΩ of the overflow water outlet;
4) Cleaning the parts, namely immersing the parts into medium-frequency ultrasonic waves, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 28-40KHz, dynamic overflow water: 6-18L/min, wherein the resistance value of pure water is equal to or more than 2MΩ of the overflow water outlet;
5) Cleaning the parts, namely immersing the parts into high-frequency ultrasonic waves, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 132-168KHz, dynamic overflow water: 6-18L/min, wherein the resistance value of pure water is equal to or more than 4MΩ of the overflow water outlet;
6) Placing the component in a detected oven for drying;
7) In the process of baking at high temperature to 1000 ℃ and reducing to 60 ℃, the temperature is controlled as follows:
Heating at 0-200deg.C;
The required time is 60-120min at 200-300 ℃;
the time required by 300-400 ℃ is 60-120min;
the time required by 400-500 ℃ is 60-120min;
the time required by 500-500 ℃ is 60-120min;
the time required by 500-600 ℃ is 60-120min;
The required time is 60-120min at 600-700 ℃;
The required time is 60-120min at 700-800 ℃;
the time required by 800-800 ℃ is 60-120min;
the time required by 800-900 ℃ is 60-120min;
The required time is 60-120min at 900-1000 ℃;
the time required by 1000-1000 ℃ is 120-180min;
The time required by 1000-800 ℃ is 60-120min;
the time required by 800-600 ℃ is 60-120min;
the time required by 600-400 ℃ is 60-120min;
the time required by 400-200 ℃ is 60-120min;
Naturally cooling at 200-60deg.C;
8) Immersing the component into high-frequency ultrasonic waves after high-temperature baking, and cleaning for more than 5-25 min; starting dynamic pure water overflow in the cleaning process, wherein the cleaning parameters are ultrasonic frequency: 132-168KHz, dynamic overflow water: 6-18L/min, the resistance value of pure water is equal to or more than 4MΩ of overflow water outlet, environmental requirement: a 100-10 class clean room;
9) The parts were placed in a tested oven for drying, environmental requirements: a 100-10 class clean room;
10 Vacuum antistatic packaging of the final part.
2. The process for removing chemical residues from high purity alumina ejector pin components according to claim 1, wherein,
The 6) part is placed in a detected oven for drying, and the oven is cleaned before drying;
And the oven cleaning step comprises that ① dust-free cloth is dipped in IPA to wipe the inner container and the Teflon material tool, ② dust-free cloth is dipped in 2% -10% MOS-grade nitric acid to wipe the inner container and the Teflon material tool, and ③ pure water is dipped in the dust-free cloth to wipe the inner container and the Teflon material tool.
3. The process for removing chemical residues from high-purity alumina ejector pin components according to claim 2, wherein,
Detecting an oven after cleaning, wherein the step of detecting the oven comprises the following steps: ① Preparing two brand-new silicon wafers in the same box, taking one of the brand-new silicon wafers ② out, placing the brand-new silicon wafers on a tool in an oven, marking the brand-new silicon wafer A, taking one of the brand-new silicon wafers as a reference silicon wafer, not performing any operation in the box, marking the brand-new silicon wafer B, starting the oven with the ③, setting the temperature to be 105-150 ℃, starting timing when the temperature in the oven reaches 105 ℃, baking for 2-4 hours, naturally cooling ④ to room temperature, taking out the silicon wafers A in the oven, ⑤ for packaging the silicon wafers A and B, detecting, wherein the chemical acid radical residues of the two silicon wafers are above 1.0x10 < -6 >, namely, if the detection of the oven is qualified, repeating the cleaning steps of the oven until the detection of the oven is qualified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311413890.4A CN118002547A (en) | 2023-10-30 | 2023-10-30 | Chemical residue removal process for high-purity alumina thimble-like component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311413890.4A CN118002547A (en) | 2023-10-30 | 2023-10-30 | Chemical residue removal process for high-purity alumina thimble-like component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118002547A true CN118002547A (en) | 2024-05-10 |
Family
ID=90959322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311413890.4A Pending CN118002547A (en) | 2023-10-30 | 2023-10-30 | Chemical residue removal process for high-purity alumina thimble-like component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118002547A (en) |
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2023
- 2023-10-30 CN CN202311413890.4A patent/CN118002547A/en active Pending
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