CN117997287A - Inductance switching module, millimeter wave reconfigurable low-noise amplifier, chip and equipment - Google Patents
Inductance switching module, millimeter wave reconfigurable low-noise amplifier, chip and equipment Download PDFInfo
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Abstract
The application discloses an inductance switching module, a millimeter wave reconfigurable low-noise amplifier, a chip and equipment, and belongs to the field of radio frequency mobile communication. The inductance switching module comprises a first inductance, a second inductance and an electronic switch; the first inductor and the second inductor are coupled; the second inductor is connected with the electronic switch and forms a loop with the electronic switch; and controlling the closing condition of the electronic switch to control the electrifying state of the second inductor so as to switch the inductance value of the first inductor. The application designs a high-difference variable inductor through a magnetic coupling enhancement technology, and realizes the input matching switching of a large frequency difference. The application also provides a two-stage reconfigurable load low-noise amplifier structure, which combines the variable inductance based on magnetic coupling enhancement, and reduces the influence of the reconfigurable structure on the noise coefficient of the amplifier.
Description
Technical Field
The present invention relates to the field of mobile communications, and in particular, to an inductance switching module, a millimeter wave reconfigurable low noise amplifier, a chip, and a device.
Background
In order to reduce The cost of a 5G (The 5th Generation) radio frequency receiver system and improve The adaptability of a receiving end to different working scenarios, the design of a reconfigurable multi-band radio frequency front end and a corresponding circuit module has become a research hotspot nowadays. The millimeter wave reconfigurable low noise amplifier is a core module of a 5G multi-band wireless receiving system and is a typical dual-band or multi-band working circuit module. The method is mainly applied to the field of 5G mobile communication and is used for millimeter wave wireless communication equipment such as 5G communication base stations, 5G mobile communication terminals and the like.
In the existing millimeter wave reconfigurable low noise amplifier design, a reconfigurable circuit structure based on a radio frequency switch MOS tube is taken as an effective design means, and the design schemes comprise a switch capacitor, a switch inductor and the like. The function of enabling the circuit to work in different frequency bands by changing bias potential is realized by changing parameters of circuit devices or changing local circuit structures through a switch. In millimeter wave band designs, the reconfigurable design is based on switched inductors due to the limited ability of the capacitor to tune the gain and match to the low noise amplifier. The switching inductance switching difference is high, but the corresponding Q value (quality factor) is low. In general, existing millimeter wave reconfigurable low noise amplifiers suffer from the following drawbacks: it is difficult to realize large-sense switching on the premise of good Q value.
Disclosure of Invention
In order to solve at least one of the technical problems existing in the prior art to a certain extent, the invention aims to provide an inductance switching module, a millimeter wave reconfigurable low-noise amplifier, a chip and equipment.
The first technical scheme adopted by the invention is as follows:
An inductance switching module comprises a first inductance, a second inductance and an electronic switch;
the first inductor and the second inductor are coupled; the second inductor is connected with the electronic switch and forms a loop with the electronic switch;
And controlling the closing condition of the electronic switch to control the electrifying state of the second inductor so as to switch the inductance value of the first inductor.
Further, the electronic switch is realized by a fourth transistor, and the grid electrode of the fourth transistor is used for inputting a control signal;
The source electrode of the fourth transistor is connected with the positive end of the second inductor, the negative end of the second inductor is grounded, and the drain electrode of the fourth transistor is grounded; or, the drain electrode of the fourth transistor is connected with the negative end of the second inductor, the positive end of the second inductor is grounded, and the source electrode of the fourth transistor is grounded.
Further, the electronic switch is implemented by a fourth transistor, a gate of the fourth transistor is used for inputting a control signal, the second inductor is composed of two inductors with symmetrical structures, a positive end of a first inductor is grounded, a negative end of the first inductor is connected with a drain electrode of the fourth transistor, a source of the fourth transistor is connected with a positive end of the second inductor, and a negative end of the second inductor is grounded.
Further, the first inductor comprises a spiral line segment, a first straight line segment and a second straight line segment which are connected with each other;
The second inductor comprises a first coupling loop and a second coupling loop, the first coupling loop and the second coupling loop are mutually coupled with the first inductor, the first coupling loop is coupled with the first straight line segment through two or more straight line segments which are connected in parallel, and the second coupling loop is coupled with the second straight line segment through two or more straight line segments which are connected in parallel.
Further, the first inductor comprises a spiral line segment, a first straight line segment and a second straight line segment, one end of the spiral line segment is connected with one end of the first straight line segment, the other end of the spiral line segment is connected with one end of the second straight line segment, the other end of the first straight line segment is used as the positive end of the first inductor, and the other end of the second straight line segment is used as the negative end of the first inductor;
The second inductor comprises a first curve section, a third straight line section, a fourth straight line section and a fifth straight line section; the first curve section is positioned in an internal blank interval of the spiral section, one end of the first curve section is connected with one end of the third straight line section, the other end of the third straight line section is used as a positive end of the second inductor, the other end of the first curve section is connected with one end of the fourth straight line section, one end of the fifth straight line section is connected with the first curve section, and the other end of the fourth straight line section and the other end of the fifth straight line section are used as negative ends of the second inductor; the fourth straight line segment and the fifth straight line segment are respectively arranged at two sides of the first straight line segment and are parallel to the first straight line segment;
The first inductor comprises a second curve section, a sixth straight line section, a seventh straight line section and an eighth straight line section; the second curve section is positioned in an internal blank interval of the spiral section, one end of the second curve section is connected with one end of the sixth straight line section, the other end of the sixth straight line section is used as a negative end of the first inductor, the other end of the second curve section is connected with one end of the seventh straight line section, one end of the eighth straight line section is connected with the second curve section, and the other end of the seventh straight line section and the other end of the eighth straight line section are used as positive ends of the first inductor; the seventh straight line segment and the eighth straight line segment are respectively arranged on two sides of the second straight line segment and are parallel to the second straight line segment.
The second technical scheme adopted by the invention is as follows:
A millimeter wave reconfigurable low noise amplifier comprising:
The first variable inductor is realized by adopting the inductance switching module, and the first end of the first variable inductor is connected with the power supply voltage;
A first amplifying circuit including a first transistor; the first transistor is used for inputting an alternating current signal, and the first amplifying circuit adopts the first variable inductance as a load;
a second amplifying circuit including a second transistor and a third transistor; the second transistor is used for inputting the alternating current signal amplified by the first amplifying circuit, the second transistor and the third transistor are cascaded mutually, and the load of the third transistor outputs the amplified alternating current signal.
Further, the first amplifying circuit further comprises a third inductor, one end of the third inductor is connected with the drain electrode of the first transistor, and the other end of the third inductor is connected with the second end of the first variable inductor.
Further, the second amplifying circuit further comprises a fourth inductor and a fifth inductor, one end of the fourth inductor is connected with the grid electrode of the first transistor, and the other end of the fourth inductor is used as the input end of the millimeter wave reconfigurable low-noise amplifier; one end of the fifth inductor is connected with the source electrode of the first transistor, and the other end of the fifth inductor is grounded.
Further, the second amplifying circuit further comprises a low coupling transformer, and the low coupling transformer comprises a sixth inductor and a seventh inductor;
The positive end of the sixth inductor is connected with the drain electrode of the second transistor, and the negative end of the sixth inductor is connected with the source electrode of the third transistor; the positive end of the seventh inductor is connected with the grid electrode of the third transistor, and the negative end of the seventh inductor is connected with the power supply voltage.
Further, the millimeter wave reconfigurable low noise amplifier further comprises a second variable inductance;
The second variable inductor is realized by adopting the inductance switching module, a first end of the second variable inductor is connected with a power supply voltage, and a second end of the second variable inductor is connected with a drain electrode of the third transistor.
The third technical scheme adopted by the invention is as follows:
a chip comprising an inductive switching module as described above or a millimeter wave reconfigurable low noise amplifier as described above.
The third technical scheme adopted by the invention is as follows:
a communication device comprising a housing, a peripheral circuit board comprising a chip as described above.
The beneficial effects of the application are as follows: the application designs a high-difference variable inductor through a magnetic coupling enhancement technology, and realizes the input matching switching of a large frequency difference. The application also provides a two-stage reconfigurable load low-noise amplifier structure, which combines the variable inductance based on magnetic coupling enhancement, thereby reducing the influence of the reconfigurable structure on the noise coefficient of the amplifier; in addition, the forward coupling technology based on the low coupling transformer is adopted, and the gain performance of the common-source common-gate is improved on the premise of ensuring the stability of the circuit.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description is made with reference to the accompanying drawings of the embodiments of the present invention or the related technical solutions in the prior art, and it should be understood that the drawings in the following description are only for convenience and clarity of describing some embodiments in the technical solutions of the present invention, and other drawings may be obtained according to these drawings without the need of inventive labor for those skilled in the art.
Fig. 1 is a circuit diagram of a millimeter wave reconfigurable low noise amplifier in embodiment 2 of the present invention;
FIG. 2 is a schematic diagram of a variable inductance structure using magnetic coupling enhancement technology in embodiment 2 of the present invention;
Fig. 3a is a schematic diagram showing the distribution of the variable inductance current density when the transistor M 4 is turned off in embodiment 2 of the present invention;
Fig. 3b is a schematic diagram showing the distribution of the variable inductance current density when the transistor M 4 is turned on in embodiment 2 of the present invention;
FIG. 4a is a schematic diagram showing the inductance value of the variable inductor applying the magnetic coupling enhancement technique in embodiment 2 of the present invention;
FIG. 4b is a schematic diagram showing the Q value of the variable inductor of example 2 of the present invention using the magnetic coupling enhancement technique;
FIG. 5 is a schematic diagram of a transformer with low coupling design in embodiment 2 of the present invention;
fig. 6 is a diagram showing the simulation result of S21 parameters of the millimeter wave reconfigurable low noise amplifier in embodiment 2 of the present invention;
Fig. 7 is a diagram showing simulation results of S11 parameters of the millimeter wave reconfigurable low noise amplifier in embodiment 2 of the present invention;
Fig. 8 is a diagram showing the simulation result of the noise figure of the millimeter wave reconfigurable low noise amplifier in embodiment 2 of the present invention;
Fig. 9 is a graph showing the results of simulation of the stability factor of the millimeter wave reconfigurable low noise amplifier in embodiment 2 of the present invention;
Fig. 10 is a circuit diagram of a millimeter wave reconfigurable low noise amplifier in embodiment 3 of the present invention;
Fig. 11 is a circuit diagram of a millimeter wave reconfigurable low noise amplifier in embodiment 4 of the present invention;
fig. 12 is a circuit diagram of a millimeter wave reconfigurable low noise amplifier in embodiment 5 of the present invention.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention. The step numbers in the following embodiments are set for convenience of illustration only, and the order between the steps is not limited in any way, and the execution order of the steps in the embodiments may be adaptively adjusted according to the understanding of those skilled in the art.
In the description of the present invention, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description of the present invention and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, a number means one or more, a number means two or more, and greater than, less than, exceeding, etc. are understood to not include the present number, and above, below, within, etc. are understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
Furthermore, in the description of the present invention, unless otherwise indicated, "a plurality" means two or more. "and/or", describes an association relationship of an association object, and indicates that there may be three relationships, for example, a and/or B, and may indicate: a exists alone, A and B exist together, and B exists alone. The character "/" generally indicates that the context-dependent object is an "or" relationship.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
In order to solve the technical problems, the technical scheme adopted by the invention comprises the following steps: a variable inductance based on a magnetic coupling enhancement technique and a reconfigurable low noise amplifier based on the variable inductance are provided. A cascode amplifier structure based on forward coupling of transformers. The coupling loop is improved to an M9 layer and is coupled between two turns of coils of the main inductor, and a part of the coupling loop adopts a structure that the two parallel interconnection lines are coupled, so that the high coupling coefficient of the main inductor and the loop is realized, and the high inductance value difference switching is realized.
Example 1
The embodiment provides an inductance switching module, which comprises a first inductance, a second inductance and an electronic switch;
The first inductor is coupled with the second inductor; the second inductor is connected with the electronic switch and forms a loop with the electronic switch;
the closing condition of the electronic switch is controlled to control the electrifying state of the second inductor, so that the inductance value of the first inductor is switched;
The positive end of the first inductor is used as the first end of the inductance switching module, and the negative end of the first inductor is used as the second end of the inductance switching module.
In this embodiment, the first inductor is coupled to the second inductor, and when the electronic switch is turned on, the loop where the second inductor is located is turned on, and an induced current is generated on the second inductor, so as to affect the inductance value of the first inductor; when the electronic switch is turned off, the loop where the second inductor is located is not conducted, and no current flows through the second inductor. Therefore, the inductance value of the first inductor is switched by controlling the closing condition of the electronic switch. The electronic switch of the embodiment can be realized by a field effect transistor or a bipolar transistor; in addition, the inductance switching module of the embodiment can be applied to various circuit structures, and is not limited to a low noise amplifier.
Example 2
Referring to fig. 1, the present embodiment provides a millimeter wave reconfigurable low noise amplifier, including:
The magnetic coupling variable inductor L d1 comprises a main inductor coil and two symmetrical coupling rings with one side grounded, wherein the positive end of the first inductor in the coupling rings is grounded, the negative end of the first inductor is connected with the drain electrode of the fourth transistor M 4, the source electrode of the fourth transistor M 4 is connected with the positive end of the second inductor in the coupling rings, and the negative end of the second inductor is grounded;
a common source circuit including a first transistor M 1; the grid electrode of the first transistor M 1 is used for inputting an alternating current signal, the drain electrode of the first transistor M 1 is connected with the second end of the variable inductor, and the source electrode of the first transistor M 1 is grounded;
A cascode circuit comprising a second transistor M 2 and a third transistor M 3; the gate of the second transistor M 2 is used for inputting the ac signal amplified by the common source circuit, the drain of the second transistor M 2 is connected to the source of the third transistor M 3, the source of the second transistor M 2 is grounded, and the drain of the third transistor M 3 outputs the amplified ac signal.
As an alternative embodiment, the common-source circuit further comprises a third inductance L d3, a fourth inductance L g1, and a fifth inductance L s1. One end of the third inductor L d3 is connected to the drain of the first transistor M 1, and the other end of the third inductor L d3 is connected to the second end of the first variable inductor. One end of the fourth inductor L g1 is connected with the grid electrode of the first transistor M 1, and the other end of the fourth inductor L g1 is used as the input end of the millimeter wave reconfigurable low-noise amplifier; one end of the fifth inductor L s1 is connected to the source of the first transistor M 1, and the other end of the fifth inductor L s1 is grounded.
As an alternative embodiment, the common-source circuit further comprises a low-coupling transformer, the low-coupling transformer comprising a sixth inductance and a seventh inductance;
The positive end of the sixth inductor is connected with the drain electrode of the second transistor M 2, and the negative end of the sixth inductor is connected with the source electrode of the third transistor M 3; the positive terminal of the seventh inductor is connected to the gate of the third transistor M 3, and the negative terminal of the seventh inductor is connected to the power supply voltage.
As an alternative embodiment, the cascode circuit further includes an inductor L d2, one terminal of the inductor L d2 is connected to the power supply voltage, and one terminal of the inductor L d2 is connected to the drain of the third transistor M 3.
In addition, as an optional implementation manner, the amplifier circuit further comprises related components of the direct current bias circuit, such as a blocking capacitor, a bias resistor, a bias voltage and the like. These components are not important components of the present application, and thus are not described in detail.
The circuit configuration and the operation principle of the amplifier are described in detail below with reference to the drawings.
(1) Description of the Circuit Structure
As shown in fig. 1, the specific circuit connection structure of the amplifier of this embodiment is: IN the first-stage common source stage of the circuit, a radio frequency signal is input from an IN input end, an inductor L g1 connects the input end with the grid electrode of M 1 IN series, a blocking capacitor C 1 is also connected between L g1 and M 1 IN series, and Vgg is connected to the grid electrode of M 1 through a large resistor R bias to provide grid voltage bias for M 1. A source of the transistor M 1 is connected to one end of the inductor L s1, and the other end of the inductor L s1 is grounded. The drain of the transistor M 1 is connected to one end of the inductor L d3, and the other end is connected with the negative end of the magnetic coupling variable inductor L d1 and is also connected with the input blocking capacitor C 2 of the next-stage common-source common-gate. The other end of the magnetic coupling variable inductor L d1 is connected with the power supply of the V dd. The magnetic coupling variable inductor L d1 consists of a main inductance coil and two symmetrical coupling rings with one grounded side, wherein the other ends of the two grounded rings are respectively connected to the drain electrode and the source electrode of the M 4, and the on-off control of the M 4 is carried out on the grid electrode of the M 4 through a large resistor R bias by using V bias with two switching states (0V/1.2V) so as to control the on-off state of the coupling rings. At the second stage of the circuit, the source of M 2 is directly connected to ground. The drain of M 2 is connected to the positive terminal of one of the inductors of the transformer tr, and the negative terminal of this inductor is connected to the source of M 3. The gate of M 3 is connected to the positive terminal of another inductor of the transformer tr, the negative terminal of which is connected to the supply of V dd. The drain electrode of M 3 is connected with an inductor L d2, and is connected with a radio frequency output end OUT through a blocking capacitor C 3, and the other end of L d2 is connected with Vdd power supply.
(2) Description of the principle of operation of the Circuit
The amplifier of the present embodiment is a millimeter wave reconfigurable low noise amplifier whose focus input matches a reconfigurable, low noise coefficient. The low noise amplifier is of a common source-common source common grid structure, the common source is used as a first stage for reducing noise coefficient, and the common source common grid is used as a second stage for improving the overall gain of the circuit. V dd provides the dc voltage required by the reconfigurable low noise amplifier, the dc starting from V dd, flowing through variable inductance L d1, inductance L d3, transistor M 1 and inductance L s1 in sequence in the first stage, and finally flowing into ground; in the second stage, the current flows through the inductor L d2, the transistor M 3, the transformer tr, and the transistor M 2 in this order, and finally flows to the ground.
The input common-source stage consists of an inductor L g1, an inductor L d1, an inductor L d3, an inductor L s1, a transistor M 1 and a transistor M 4, and the noise performance of the input stage is improved to a certain extent by adopting the common-source stage. At the drain of transistor M 1, variable inductance L d1 is controlled by switching transistor M 4 to vary the inductance of the inductance, thus providing good tuning for input matching. When the transistor M 4 of the first common-source stage is operated in the off state, the two coupling loops of the variable inductance L d1 are disconnected, and the ac small signal cannot enter the loop of the coupling loop through coupling, and at this time, the coupling loop only provides a small parasitic capacitance. The parasitic capacitance shifts the self-resonant frequency of the inductor to low frequency, so that the inductance value of the inductor is improved slightly. When M 4 is operated in the off state, the current density distribution of the inductor is shown in fig. 3 a. When the transistor M 4 works in a conducting state, two part coupling loops of the variable inductor L d1 are closed, the coupling loops form a pair of ground loops, and an alternating current small signal forms a stronger extra pair of ground loops through high coupling between the main inductor of the variable inductor L d1 and the coupling loops, so that the inductance value of the main inductor is greatly reduced, and the reconfigurable passive inductor with high switching difference is realized. When M 4 is operated in the on state, the current density distribution of the inductor is shown in fig. 3 b. In different states, the inductance value of the variable inductor is shown in fig. 4a, and the Q value of the variable inductor is shown in fig. 4 b.
(3) Layout design
The variable inductance structure of the magnetic coupling enhancement technology applied in this embodiment is shown in fig. 2, and the inductance has four ports P1 to P4, and the connection relationship in the circuit is as follows: p1 is connected with the power supply of V dd, P2 is connected with the drain electrode of M 1, and P3 and P4 are connected with the source electrode and the drain electrode of M 4. The paths of P1 to P2 are main inductances formed by two turns of coils, the paths of P3 and P4 to the ground are coupling loop inductances formed by two parts of 1/4 turns of coils, the tail ends of the coupling loop are branched into two parallel branches to be grounded, the two ends of the straight line parts of the main inductance coils are coupled, and the tail ends of the two branches are grounded through a through hole. The main inductor and the coupling ring are combined with the M 4 switch to form the high-inductance switching difference variable inductor applying the magnetic coupling enhancement technology. In fig. 2, M8 and M9 represent an 8 th metal layer and a 9 th metal layer.
Further, in order to improve the gain performance of the circuit, the embodiment proposes a forward coupling structure based on a low-coupling transformer, and the layout design of the low-coupling transformer is shown in fig. 5. The ac small signal at the drain of transistor M 2 is coupled to the gate of transistor M 3 for additional signal amplification by a low coupling coefficient, thereby slightly increasing the gain of the circuit. Meanwhile, the stability of the circuit is ensured due to the low coupling coefficient, and the circuit can work normally and stably.
(4) Experimental results
The amplifier of the embodiment can be used for communication of 5G millimeter wave 28GHz and 39GHz wireless equipment, wherein S21 parameter simulation results are shown in FIG. 6, and peak gains are 14.311dB/13.534dB respectively in the 28GHz and 39GHz frequency bands. The simulation result of the S11 parameter is shown in FIG. 7, and S11 is-20.081 dB/-36.237dB at the 28GHz frequency band and the 39GHz frequency band respectively. The simulation result of the noise coefficient is shown in FIG. 8, and the noise coefficient is 3.259dB/4.307dB respectively in the 28GHz and 39GHz frequency bands. The stability factor simulation result is shown in FIG. 9, and the stability factor has the lowest value of 2.468/4.181 at the 28GHz frequency band and the 39GHz frequency band respectively.
Example 3
As shown in fig. 10, the circuit configuration of the millimeter wave reconfigurable low noise amplifier provided in embodiment 3 is the same as that in embodiment 2, and the magnetic coupling enhanced variable inductance design is also adopted, in which the difference is that: the common source circuit in embodiment 3 has the inductance L d3 removed, the area can be greatly reduced by removing the inductance L d3, the matching can be affected slightly, and the specific circuit structure can be selected according to the actual circuit requirement.
Example 4
As shown in fig. 11, the circuit configuration of the millimeter wave reconfigurable low noise amplifier provided in embodiment 4 is the same as that in embodiment 2, and the magnetic coupling enhanced variable inductance design is also adopted, in which the difference is that: in the magnetic coupling variable inductance L d1 of embodiment 4, the coupling ring adopts a single complete coupling ring design; compared with the design of two coupling rings in the embodiment 2, the design of a single complete coupling ring can reduce the design difficulty of a layout and can obtain performance similar to the design of the embodiment 2. Therefore, the specific circuit structure can be selected according to the actual circuit requirement.
Example 5
As shown in fig. 12, the circuit configuration of the millimeter wave reconfigurable low noise amplifier provided in embodiment 5 is the same as that in embodiment 2, and the magnetic coupling enhanced variable inductance design is also adopted, in which the difference is that: in embodiment 5, a plurality of magnetic coupling enhancement variable inductances are used, and magnetic coupling enhancement variable inductances are used at the drain electrode of the first transistor M 1 and the drain electrode of the third transistor M 3 at the same time, and the two magnetic coupling enhancement variable inductances can be applied to better give consideration to tuning of the gain peak frequency, but may deteriorate noise performance. Therefore, the specific circuit structure can be selected according to the actual circuit requirement.
In summary, compared with the prior art, the invention at least comprises the following advantages and beneficial effects:
(1) The invention provides a magnetic small-area high-difference variable inductance design technology based on a coupling enhancement technology, which realizes a variable inductance with reasonable Q value and larger inductance value difference by using a smaller area and can reduce the area of a chip on the premise of ensuring an excellent switching function. In addition, the invention also provides a corresponding layout design, the tail ends of the coupling ring are branched into two parallel branches to be grounded and are coupled at the two ends of the straight line part of the main inductance coil, and the tail ends of the two branches are grounded through the through holes.
(2) The invention provides a reconfigurable low-noise amplifier based on a high-difference variable inductance, which realizes the input matching switching of a large frequency difference by using a smaller area. Based on the magnetic coupling enhanced variable inductance design, the proposed common-source-common-source common-grid low-noise amplifier structure realizes the input matching switching of large frequency difference values, and reduces the influence of the reconfigurable structure on the noise and gain performance of the amplifier.
(3) The invention provides a forward coupling technology of a low-coupling transformer, and provides an additional amplifying path for a common grid tube through a low coupling coefficient, thereby realizing the improvement of circuit gain. The forward coupling technology based on the low coupling transformer improves the gain performance of the common-source common-gate on the premise of ensuring the stability of the circuit.
In the foregoing description of the present specification, reference has been made to the terms "one embodiment/example", "another embodiment/example", "certain embodiments/examples", and the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
While the preferred embodiment of the present application has been described in detail, the present application is not limited to the above embodiments, and various equivalent modifications and substitutions can be made by those skilled in the art without departing from the spirit of the present application, and these equivalent modifications and substitutions are intended to be included in the scope of the present application as defined in the appended claims.
Claims (11)
1. An inductance switching module is characterized by comprising a first inductance, a second inductance and an electronic switch;
the first inductor and the second inductor are coupled; the second inductor is connected with the electronic switch and forms a loop with the electronic switch;
And controlling the closing condition of the electronic switch to control the electrifying state of the second inductor so as to switch the inductance value of the first inductor.
2. The inductance switching module according to claim 1, wherein the electronic switch is implemented with a fourth transistor, a gate of the fourth transistor being used for inputting a control signal;
The source electrode of the fourth transistor is connected with the positive end of the second inductor, the negative end of the second inductor is grounded, and the drain electrode of the fourth transistor is grounded; or, the drain electrode of the fourth transistor is connected with the negative end of the second inductor, the positive end of the second inductor is grounded, and the source electrode of the fourth transistor is grounded.
3. The inductance switching module according to claim 1, wherein the electronic switch is implemented by a fourth transistor, a gate of the fourth transistor is used for inputting a control signal, the second inductance is composed of two inductors with symmetrical structures, a positive terminal of a first inductor is grounded, a negative terminal of the first inductor is connected to a drain of the fourth transistor, a source of the fourth transistor is connected to a positive terminal of the second inductor, and a negative terminal of the second inductor is grounded.
4. An inductor-switching module according to claim 3, wherein the first inductor comprises a spiral segment, a first straight segment and a second straight segment connected to each other;
The second inductor comprises a first coupling loop and a second coupling loop, the first coupling loop and the second coupling loop are mutually coupled with the first inductor, the first coupling loop is coupled with the first straight line segment through two or more straight line segments which are connected in parallel, and the second coupling loop is coupled with the second straight line segment through two or more straight line segments which are connected in parallel.
5. A millimeter wave reconfigurable low noise amplifier, comprising:
a first variable inductance implemented with the inductance switching module of any one of claims 1-4, a first end of the first variable inductance being connected to a supply voltage;
A first amplifying circuit including a first transistor; the first transistor is used for inputting an alternating current signal, and the first amplifying circuit adopts the first variable inductance as a load;
a second amplifying circuit including a second transistor and a third transistor; the second transistor is used for inputting the alternating current signal amplified by the first amplifying circuit, the second transistor and the third transistor are cascaded mutually, and the load of the third transistor outputs the amplified alternating current signal.
6. The millimeter wave reconfigurable low noise amplifier according to claim 5, wherein said first amplifying circuit further comprises a third inductor, one end of said third inductor being connected to said first transistor drain, and the other end of said third inductor being connected to said second end of said first variable inductor.
7. The millimeter wave reconfigurable low noise amplifier according to claim 5, wherein said second amplifying circuit further comprises a fourth inductor and a fifth inductor, one end of said fourth inductor being connected to the gate of said first transistor, the other end of said fourth inductor being the input of said millimeter wave reconfigurable low noise amplifier; one end of the fifth inductor is connected with the source electrode of the first transistor, and the other end of the fifth inductor is grounded.
8. The millimeter wave reconfigurable low noise amplifier according to claim 1, wherein said second amplifying circuit further comprises a low coupling transformer, said low coupling transformer comprising a sixth inductance and a seventh inductance;
The positive end of the sixth inductor is connected with the drain electrode of the second transistor, and the negative end of the sixth inductor is connected with the source electrode of the third transistor; the positive end of the seventh inductor is connected with the grid electrode of the third transistor, and the negative end of the seventh inductor is connected with the power supply voltage.
9. A millimeter wave reconfigurable low noise amplifier according to any of claims 5-8, further comprising a second variable inductance;
The second variable inductance is implemented by the inductance switching module according to any one of claims 1-4, a first end of the second variable inductance is connected to a power supply voltage, and a second end of the second variable inductance is connected to a drain electrode of the third transistor.
10. A chip comprising an inductive switching module according to any of claims 1-4 or a millimeter wave reconfigurable low noise amplifier according to any of claims 5-9.
11. An electronic device comprising a housing, a peripheral circuit board, the peripheral circuit board comprising the chip of claim 10.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410084744.XA CN117997287A (en) | 2024-01-19 | 2024-01-19 | Inductance switching module, millimeter wave reconfigurable low-noise amplifier, chip and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410084744.XA CN117997287A (en) | 2024-01-19 | 2024-01-19 | Inductance switching module, millimeter wave reconfigurable low-noise amplifier, chip and equipment |
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| CN117997287A true CN117997287A (en) | 2024-05-07 |
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| CN202410084744.XA Pending CN117997287A (en) | 2024-01-19 | 2024-01-19 | Inductance switching module, millimeter wave reconfigurable low-noise amplifier, chip and equipment |
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| CN (1) | CN117997287A (en) |
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