CN117949767A - Capacitor failure position determining method and device - Google Patents
Capacitor failure position determining method and device Download PDFInfo
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Abstract
The application provides a method and a device for determining a capacitor failure position, wherein the method comprises the following steps: determining a target side surface and a target connection point of the capacitor to be measured, wherein the target side surface refers to a mapping surface of a capacitor structure of the capacitor to be measured, and the target connection point refers to an external connection point corresponding to a preset electrode of the capacitor to be measured; determining a side to be detected corresponding to the target side and a to-be-connected point corresponding to the target connecting point, wherein the side to be detected refers to one surface of an exposed capacitor structure obtained by grinding the target side, and the to-be-connected point refers to a connecting point of exposed metal material obtained by removing layers from an external connecting point; connecting a nano probe of a scanning electron microscope to a to-be-connected point, and scanning the side surface to be detected through an electron beam of the scanning electron microscope to obtain a detection current image of the capacitor to be detected; and estimating the failure position of the capacitor to be detected by comparing the detected current image with a preset current image.
Description
Technical Field
The present application relates to the field of semiconductor detection technologies, and in particular, to a method and an apparatus for determining a capacitor failure position.
Background
MIM (metal-insulator-metal) capacitors are formed by two metal plates, and if there is a defect in the insulating region between the two metal plates, the MIM capacitor may fail. In the prior art, whether the capacitor fails or not is determined by pressurizing any one side and then detecting the current on the other side, and a failure point is positioned by a failure analysis machine, but the failure point is often not positioned due to the blocking of the metal layer.
Disclosure of Invention
Therefore, an object of the present application is to provide a method and an apparatus for determining a failure position of a capacitor to be tested, by grinding a cross section of a failed capacitor to be tested and removing a layer from a connection point connected to the outside, and then controlling a scanning electron microscope to scan the cross section and receive a current signal of the connection point through a nano probe, so as to obtain a detected current image corresponding to the cross section of the capacitor to be tested, thereby determining the failure position of the capacitor to be tested by comparing a preset current image of a capacitor not to be tested with a detected current image corresponding to the capacitor to be tested, solving the technical problem that the failure position of the capacitor to be tested is difficult to determine in the prior art, and achieving the technical effect of determining the failure position of the capacitor to be tested.
The application mainly comprises the following aspects:
in a first aspect, an embodiment of the present application provides a method for determining a location of a capacitor failure, where the method includes: determining a target side surface of a capacitor to be measured and a target connection point, wherein the target side surface refers to a mapping surface of a capacitor structure of the capacitor to be measured, and the target connection point refers to an external connection point corresponding to a preset electrode of the capacitor to be measured; determining a side to be detected corresponding to the target side and a to-be-detected point corresponding to the target connection point, wherein the side to be detected refers to one surface of the capacitor structure exposed by grinding the target side, and the to-be-detected point refers to a connection point of exposed metal material obtained by removing layers from the external connection point; connecting a nano probe of a scanning electron microscope to the to-be-connected point, and scanning the to-be-detected side surface through an electron beam of the scanning electron microscope to obtain a detection current image of the to-be-detected capacitor; and estimating the failure position of the capacitor to be detected by comparing the detected current image with a preset current image.
Optionally, the nanoprobe is used for connecting an amplifier, and the detected current image of the capacitor to be detected is obtained by the following method: when the electron beam scans each to-be-measured point of the to-be-measured side surface, obtaining a current signal of each to-be-measured point on the to-be-measured side surface through the amplifier; and generating a detection current image of the capacitor to be detected according to the current signals of each to-be-detected point on the side to be detected.
Optionally, the generating a detected current image of the capacitor to be detected according to the current signals of each to-be-detected point on the to-be-detected side surface includes: and converting the current signals of each to-be-measured point on the to-be-measured side surface into corresponding pixel values to obtain a detected current image of the to-be-measured capacitor.
Optionally, the pre-set current image is used for representing a capacitor structure corresponding to a pre-set capacitor that is not disabled, and the predicting the disabling position of the capacitor to be tested by comparing the detected current image with the pre-set current image includes: determining a distinguishing position between the detected current image and the preset current image; and estimating the failure position of the capacitor to be detected according to the distance between the distinguishing position and a preset side surface of the capacitor to be detected, wherein the preset side surface refers to a side surface of the metal layer close to the capacitor to be detected.
Optionally, the capacitor structure includes an insulating substrate and a metal layer above the insulating substrate, where the metal layer includes a first metal region and a second metal region, the target side includes a first mapping region and a second mapping region, the first mapping region refers to a mapping region of the first metal region on the target side, and the second mapping region refers to a mapping region of the second metal region on the target side, where the first mapping region and the second mapping region do not overlap.
Optionally, the capacitor structure further includes a lower electrode plate located below the insulating substrate, an upper electrode plate and an insulating medium layer located between the upper electrode plate and the lower electrode plate are disposed in the insulating substrate, wherein the upper electrode plate is connected with the first metal region through a corresponding first through hole, and the lower electrode plate is connected with the second metal region through a corresponding second through hole.
Optionally, the capacitor to be measured includes a first electrode and a second electrode, and the preset electrode refers to the first electrode or the second electrode; the first electrode is led out from the upper polar plate through the metal layer, and the second electrode is led out from the lower polar plate.
In a second aspect, an embodiment of the present application further provides a capacitance failure position determining apparatus, where the capacitance failure position determining apparatus includes: the first determining module is used for determining a target side face of the capacitor to be tested and a target connecting point, wherein the target side face refers to a mapping face of a capacitor structure of the capacitor to be tested, and the target connecting point refers to an external connecting point corresponding to a preset electrode of the capacitor to be tested; the second determining module is configured to determine a side to be detected corresponding to the target side and a point to be connected corresponding to the target connection point, where the side to be detected refers to a side of the capacitor structure exposed by grinding the target side, and the point to be detected refers to a connection point of exposed metal material obtained by delamination of the external connection point; the detection module is used for connecting the nano probe of the scanning electron microscope to the to-be-connected point, and scanning the side surface to be detected through electron beams of the scanning electron microscope to obtain a detection current image of the capacitor to be detected; and the estimating module is used for estimating the failure position of the capacitor to be detected by comparing the detected current image with a preset current image.
In a third aspect, an embodiment of the present application further provides an electronic device, including: a processor, a memory and a bus, the memory storing machine readable instructions executable by the processor, the processor and the memory communicating via the bus when the electronic device is running, the machine readable instructions being executable by the processor to perform the steps of the capacitance failure location determination method described in the first aspect or any of the possible implementation manners of the first aspect.
In a fourth aspect, the embodiment of the present application further provides a computer readable storage medium, on which a computer program is stored, which when executed by a processor performs the steps of the method for determining a position of capacitive failure according to the first aspect or any possible implementation manner of the first aspect.
The embodiment of the application provides a method and a device for determining a capacitor failure position, wherein the method comprises the following steps: determining a target side surface of a capacitor to be measured and a target connection point, wherein the target side surface refers to a mapping surface of a capacitor structure of the capacitor to be measured, and the target connection point refers to an external connection point corresponding to a preset electrode of the capacitor to be measured; determining a side to be detected corresponding to the target side and a to-be-detected point corresponding to the target connection point, wherein the side to be detected refers to one surface of the capacitor structure exposed by grinding the target side, and the to-be-detected point refers to a connection point of exposed metal material obtained by removing layers from the external connection point; connecting a nano probe of a scanning electron microscope to the to-be-connected point, and scanning the to-be-detected side surface through an electron beam of the scanning electron microscope to obtain a detection current image of the to-be-detected capacitor; and estimating the failure position of the capacitor to be detected by comparing the detected current image with a preset current image. The section of the failed capacitor to be tested is ground, the connecting point outside the capacitor to be tested is connected, the scanning electron microscope is controlled to scan the section and the current signal of the connecting point is received through the nano probe, so that the detection current image corresponding to the section of the capacitor to be tested is obtained, the failure position of the capacitor to be tested is determined by comparing the preset current image of the capacitor which is not failed with the detection current image corresponding to the capacitor to be tested, the technical problem that the failure position of the capacitor to be tested is difficult to determine in the prior art is solved, and the technical effect of determining the failure position of the capacitor to be tested is achieved.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a flowchart of a method for determining a position of a capacitor failure according to an embodiment of the present application.
Fig. 2 shows a schematic diagram of a capacitor structure provided by an embodiment of the present application.
Fig. 3 is a schematic diagram of a detected current image of a capacitor to be detected according to an embodiment of the present application.
Fig. 4 is a schematic diagram of a preset current image according to an embodiment of the present application.
Fig. 5 shows a schematic diagram of a detected current image provided by an embodiment of the present application.
Fig. 6 is a functional block diagram of a capacitive failure location determining apparatus according to an embodiment of the present application.
Fig. 7 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present application, and it should be understood that the drawings in the present application are for the purpose of illustration and description only and are not intended to limit the scope of the present application. In addition, it should be understood that the schematic drawings are not drawn to scale. A flowchart, as used in this disclosure, illustrates operations implemented according to some embodiments of the present application. It should be appreciated that the operations of the flow diagrams may be implemented out of order and that steps without logical context may be performed in reverse order or concurrently. Moreover, one or more other operations may be added to or removed from the flow diagrams by those skilled in the art under the direction of the present disclosure.
In addition, the described embodiments are only some, but not all, embodiments of the application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by a person skilled in the art based on embodiments of the application without making any inventive effort, fall within the scope of the application.
In the prior art, when the failure position is determined by an OBRICH (light-induced resistance change) machine, the penetrability of laser is affected by a metal layer of a capacitor; when the failure position is determined by a Thermal (heat radiation) machine, the metal layer of the capacitor has heat conduction effect; when the failure position is determined by an EMMI (micro light microscope) machine, the metal layer of the capacitor can block the overflow of photons. Furthermore, if a dielectric layer defect or a process defect in the middle of the capacitor causes a short circuit of upper and lower polar plates of the capacitor or an open circuit area exists, the blocking of the metal layer is difficult to catch a failure point. After the metal layer is removed, the metal connection line between the upper polar plate and the lower polar plate of the MIM capacitor is disappeared, and the current cannot be conducted to influence the positioning of the failure position.
Based on the above, the embodiment of the application provides a method and a device for determining the failure position of a capacitor to be tested, which are used for grinding the section of the failed capacitor to be tested and removing layers from a connecting point connected with the outside, and then controlling a scanning electron microscope to scan the section and receive a current signal of the connecting point through a nano probe so as to obtain a detection current image corresponding to the section of the capacitor to be tested, thereby determining the failure position of the capacitor to be tested by comparing a preset current image of a capacitor which is not failed with the detection current image corresponding to the capacitor to be tested, solving the technical problem that the failure position of the capacitor to be tested is difficult to determine in the prior art, and achieving the technical effect of determining the failure position of the capacitor to be tested.
The method comprises the following steps:
referring to fig. 1 and fig. 2, fig. 1 is a flowchart of a method for determining a position of a capacitor failure according to an embodiment of the present application, and fig. 2 is a schematic diagram of a capacitor structure according to an embodiment of the present application. As shown in fig. 1, the method for determining the position of capacitor failure provided by the embodiment of the application comprises the following steps:
s101: and determining the target side face and the target connection point of the capacitor to be measured.
The capacitor to be measured is a failure capacitor, so as to further determine the failure position of the capacitor to be measured. The target side face refers to a mapping face of a capacitance structure of the capacitor to be tested, and the target connection point refers to an external connection point corresponding to a preset electrode of the capacitor to be tested.
That is, the side of the target corresponds to the capacitance structure of the section of the capacitor to be measured. The target connection point is an external connection point corresponding to any electrode of the capacitor to be tested, and the external connection point is used for being connected with an external circuit.
As shown in fig. 2, the capacitor structure provided in the embodiment of the application includes an insulating substrate 101 and a metal layer 102 located above the insulating substrate, where the metal layer includes a first metal region 1021 and a second metal region 1022. The direction corresponding to the thickness of the capacitor is set as the Z-axis direction, that is, the thickness direction of the insulating substrate is the Z-axis direction, the horizontal direction in which the metal layer of the capacitor is located is set as the X-axis direction, and the intersection point between the Z-axis direction and the X-axis direction is set as the origin O, so that the target side surface of the capacitor is defined as the ZOX plane, and the direction perpendicular to the target side surface is set as the Y-axis direction.
The target side surface comprises a first mapping area and a second mapping area, the first mapping area refers to the mapping area of the first metal area on the target side surface, the second mapping area refers to the mapping area of the second metal area on the target side surface, and the first mapping area and the second mapping area are not overlapped.
For example, the first metal region is projected along the Y-axis ZOX plane to obtain a first mapped region, the second metal region is projected along the Y-axis ZOX plane to obtain a second mapped region, and the first mapped region and the second mapped region do not overlap. And projecting the first metal region along the X-axis ZOY plane to obtain a third mapping region, and projecting the second metal region along the X-axis ZOY plane to obtain a fourth mapping region, wherein the first mapping region and the second mapping region are overlapped.
The capacitor structure further comprises a lower electrode plate 1012 positioned below the insulating substrate, wherein an upper electrode plate 1011 and an insulating medium layer 1013 positioned between the upper electrode plate and the lower electrode plate are arranged in the insulating substrate, the upper electrode plate is connected with the first metal region 1021 through a corresponding first through hole 1014, and the lower electrode plate is connected with the second metal region 1022 through a corresponding second through hole 1015.
That is, an insulating substrate is arranged between the metal layer and the lower polar plate, an insulating medium layer is arranged above the lower polar plate in a contact manner, an upper polar plate is arranged above the insulating medium layer in a contact manner, the upper polar plate is connected with the metal layer through a first through hole (VIA) corresponding to the upper polar plate, and the lower polar plate is connected with the metal layer through a second through hole corresponding to the lower polar plate.
The capacitor to be measured comprises a first electrode and a second electrode, and the preset electrode refers to the first electrode or the second electrode; the first electrode is led out from the upper polar plate through the metal layer, and the second electrode is led out from the lower polar plate.
Illustratively, as shown in fig. 2, the first electrode is led from the upper plate through the first metal region, and the second electrode is led from the lower plate, both of which may be connected to an external circuit. When the capacitor is not in failure, the preset electrode is conducted with the upper electrode plate when the preset electrode is the first electrode, and is conducted with the lower electrode plate when the preset electrode is the second electrode.
That is, the capacitor includes a first external connection point corresponding to the first electrode and a second external connection point corresponding to the second electrode, and further, the first electrode is connected to an external circuit through the first external connection point, and the second electrode is connected to the external circuit through the second external connection point.
Illustratively, the capacitance to be measured is determined by: for each candidate capacitor, connecting a first external connection point of the candidate capacitor to an external circuit, grounding a second external connection point of the candidate capacitor, and determining whether the candidate capacitor is a failed capacitor by detecting a voltage change of the first external connection point. Generally, if the voltage at the first external connection point is stable for a preset time, the candidate capacitor is not considered to be a failure capacitor.
S102: and determining the side to be detected corresponding to the target side and the point to be detected corresponding to the target connection point.
The side to be measured refers to one surface of the target side, which is obtained by grinding, exposing the capacitor structure, and the to-be-connected point refers to a connecting point of exposed metal material, which is obtained by removing the layer from the external connecting point.
That is, the exposed capacitor section is obtained by grinding the target side of the capacitor to be measured, the capacitor section shows the capacitor structure, and the thickness of the capacitor structure and the metal layer is not damaged in the grinding process. And removing the layer of the target connection point to expose the metal layer or the lower polar plate corresponding to the preset electrode so as to be convenient for connecting the nano probe.
S103: and connecting the nano probe of the scanning electron microscope to the to-be-connected point, and scanning the side surface to be detected through an electron beam of the scanning electron microscope to obtain a detection current image of the capacitor to be detected.
The nano probe is used for connecting an amplifier, and a detection current image of the capacitor to be detected is obtained by the following steps: when the electron beam scans each to-be-measured point of the to-be-measured side surface, obtaining a current signal of each to-be-measured point on the to-be-measured side surface through the amplifier; and generating a detection current image of the capacitor to be detected according to the current signals of each to-be-detected point on the side to be detected.
That is, the scanning electron microscope (SEM, scanning electron microscope) further includes a Amplifier (Amplifier) connected to the nanoprobe (nano probe). The side to be measured can be understood to consist of a plurality of points to be measured, and then, the electron beam scans each point to be measured of the side to be measured, if the point to be measured is a failure position which can be conducted to the metal material in the metal material or the insulating layer, electrons of the point to be measured can be absorbed, and then, the electrons are led out to the amplifier through the nano probe, and the amplifier is used for converting received electronic signals into current signals, so that the current signals corresponding to each point to be measured can be obtained.
The step of generating a detected current image of the capacitor to be detected according to the current signals of each to-be-detected point on the side to be detected comprises the following steps: and converting the current signals of each to-be-measured point on the to-be-measured side surface into corresponding pixel values to obtain a detected current image of the to-be-measured capacitor.
That is, for each point to be measured on the side to be measured, the pixel value corresponding to the point to be measured is determined according to the magnitude of the current signal of the point to be measured, so as to form the detected current image of the capacitor to be measured according to the pixel value corresponding to each point to be measured. Since the pixel values can characterize the brightness, it is distinguished whether the point can be turned on by detecting bright and dark areas in the current image.
Illustratively, the area through which current passes will form a bright area, and the area through which no current passes will form a dark area, and further, typically, there may be a wire short or abnormal location of a short at the interface between the bright and dark areas.
S104: and estimating the failure position of the capacitor to be detected by comparing the detected current image with a preset current image.
The preset current image is used for representing a capacitor structure corresponding to a preset capacitor which is not disabled, and the disabling position of the capacitor to be tested is estimated by comparing the detection current image with the preset current image, and the method comprises the following steps: determining a distinguishing position between the detected current image and the preset current image; and estimating the failure position of the capacitor to be detected according to the distance between the distinguishing position and a preset side surface of the capacitor to be detected, wherein the preset side surface refers to a side surface of the metal layer close to the capacitor to be detected.
That is, the current images of the failed capacitor to be tested and the preset capacitor which is not failed are compared, so that the distinguishing position between the capacitor to be tested and the preset capacitor can be determined, and the distance between the distinguishing position and the preset side surface of the capacitor to be tested can be understood as the depth of the failure position of the capacitor to be tested, so that the failure position of the capacitor to be tested can be determined. Generally, the preset capacitor should have the same structure as the capacitor to be measured.
The reasons for the failure of the capacitor include: metal short, metal open and insulating layer on.
Referring to fig. 3, fig. 3 is a schematic diagram of a detected current image of a capacitor to be detected provided by an embodiment of the present application, as shown in fig. 3, a nano probe 201 is connected to a point to be detected corresponding to a first metal area, and when an electron beam scans each point to be detected on a side to be detected, if the point to be detected is conductive, electrons are transferred to an amplifier through the nano probe, and if the point to be detected is non-conductive, no electrons are transferred to the amplifier through the nano probe, and then, the conduction condition of each point to be detected on the side to be detected can be clarified through the amplifier. If a current passes through the insulating medium layer between the upper plate and the lower plate, a current flows through the region corresponding to the insulating medium layer, so that a current flows through the lower plate 1012, the second through hole 1015 and the second metal region 1022. Therefore, the specific failure position can be estimated through the distance between the area, corresponding to the insulating medium layer, through which the current flows and the first metal area.
Referring to fig. 4 and 5, fig. 4 is a schematic diagram of a preset current image provided by an embodiment of the present application, and fig. 5 is a schematic diagram of a detected current image provided by an embodiment of the present application. Furthermore, by comparing the distinguishing positions between the preset current image and the detection current image, the failure condition that the capacitor to be detected corresponding to the detection current image is actually conducted due to the fact that the capacitor to be detected is originally an insulating area can be determined, so that the actual failure position can be determined conveniently through the detection current image.
Based on the same application conception, the embodiment of the application also provides a capacitor failure position determining device corresponding to the capacitor failure position determining method provided by the embodiment, and because the principle of solving the problem of the device in the embodiment of the application is similar to that of the capacitor failure position determining method of the embodiment of the application, the implementation of the device can refer to the implementation of the method, and the repetition is omitted.
Fig. 6 is a functional block diagram of a capacitor failure location determining device according to an embodiment of the present application, as shown in fig. 6. The capacitance failure position determination device 30 includes: the first determining module 301 is configured to determine a target side surface of the capacitor to be measured and a target connection point, where the target side surface refers to a mapping surface of a capacitor structure of the capacitor to be measured, and the target connection point refers to an external connection point corresponding to a preset electrode of the capacitor to be measured; the second determining module 302 is configured to determine a side to be detected corresponding to the target side and a point to be connected corresponding to the target connection point, where the side to be detected refers to a side of the capacitor structure exposed by grinding the target side, and the point to be connected refers to a connection point of exposed metal material obtained by delamination of the external connection point; the detection module 303 is configured to connect a nanoprobe of a scanning electron microscope to the to-be-connected point, and scan the to-be-detected side surface by an electron beam of the scanning electron microscope to obtain a detection current image of the to-be-detected capacitor; and the estimating module 304 is configured to estimate a failure position of the capacitor to be detected by comparing the detected current image with a preset current image.
Based on the same application concept, referring to fig. 7, a schematic structural diagram of an electronic device according to an embodiment of the present application is shown, where an electronic device 40 includes: a processor 401, a memory 402 and a bus 403, said memory 402 storing machine-readable instructions executable by said processor 401, said processor 401 and said memory 402 communicating with each other via said bus 403 when the electronic device 40 is running, said machine-readable instructions being executed by said processor 401 to perform the steps of the capacitive failure location determination method according to any of the embodiments described above.
In particular, the machine readable instructions, when executed by the processor 401, may perform the following: determining a target side surface of a capacitor to be measured and a target connection point, wherein the target side surface refers to a mapping surface of a capacitor structure of the capacitor to be measured, and the target connection point refers to an external connection point corresponding to a preset electrode of the capacitor to be measured; determining a side to be detected corresponding to the target side and a to-be-detected point corresponding to the target connection point, wherein the side to be detected refers to one surface of the capacitor structure exposed by grinding the target side, and the to-be-detected point refers to a connection point of exposed metal material obtained by removing layers from the external connection point; connecting a nano probe of a scanning electron microscope to the to-be-connected point, and scanning the to-be-detected side surface through an electron beam of the scanning electron microscope to obtain a detection current image of the to-be-detected capacitor; and estimating the failure position of the capacitor to be detected by comparing the detected current image with a preset current image.
Based on the same application concept, the embodiment of the application also provides a computer readable storage medium, wherein a computer program is stored on the computer readable storage medium, and the computer program is executed by a processor to execute the steps of the capacitor failure position determining method provided by the embodiment.
Specifically, the storage medium may be a general storage medium, such as a mobile magnetic disk, a hard disk, or the like, and when a computer program on the storage medium is run, the method for determining a failure position of a capacitor to be tested may be executed, by grinding a section of the failed capacitor to be tested and removing a layer of a connection point outside the connection, and then controlling a scanning electron microscope to scan the section and receive a current signal of the connection point through a nano probe, so as to obtain a detected current image corresponding to the section of the capacitor to be tested, thereby determining the failure position of the capacitor to be tested by comparing a preset current image of a capacitor not to be tested with a detected current image corresponding to the capacitor to be tested, solving the technical problem that the failure position of the capacitor to be tested is difficult to determine in the prior art, and achieving the technical effect of determining the failure position of the capacitor to be tested.
It will be clear to those skilled in the art that, for convenience and brevity of description, specific working procedures of the above-described system and apparatus may refer to corresponding procedures in the foregoing method embodiments, which are not described herein again. In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other manners. The above-described apparatus embodiments are merely illustrative, for example, the division of the units is merely a logical function division, and there may be other manners of division in actual implementation, and for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some communication interface, device or unit indirect coupling or communication connection, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a non-volatile computer readable storage medium executable by a processor. Based on this understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method according to the embodiments of the present application. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily appreciate variations or alternatives within the scope of the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (10)
1. A method of determining a location of a capacitive failure, the method comprising:
Determining a target side surface of a capacitor to be measured and a target connection point, wherein the target side surface refers to a mapping surface of a capacitor structure of the capacitor to be measured, and the target connection point refers to an external connection point corresponding to a preset electrode of the capacitor to be measured;
Determining a side to be detected corresponding to the target side and a to-be-detected point corresponding to the target connection point, wherein the side to be detected refers to one surface of the capacitor structure exposed by grinding the target side, and the to-be-detected point refers to a connection point of exposed metal material obtained by removing layers from the external connection point;
Connecting a nano probe of a scanning electron microscope to the to-be-connected point, and scanning the to-be-detected side surface through an electron beam of the scanning electron microscope to obtain a detection current image of the to-be-detected capacitor;
And estimating the failure position of the capacitor to be detected by comparing the detected current image with a preset current image.
2. The method according to claim 1, wherein the nanoprobe is used for connecting an amplifier, and the detected current image of the capacitance to be detected is obtained by:
When the electron beam scans each to-be-measured point of the to-be-measured side surface, obtaining a current signal of each to-be-measured point on the to-be-measured side surface through the amplifier;
And generating a detection current image of the capacitor to be detected according to the current signals of each to-be-detected point on the side to be detected.
3. The method according to claim 2, wherein generating the detected current image of the capacitor to be measured according to the current signals of the respective measuring points on the side to be measured comprises:
and converting the current signals of each to-be-measured point on the to-be-measured side surface into corresponding pixel values to obtain a detected current image of the to-be-measured capacitor.
4. The method of claim 1, wherein the predetermined current image is used to characterize a capacitance structure corresponding to a predetermined capacitance that has not failed,
The step of estimating the failure position of the capacitor to be detected by comparing the detected current image with a preset current image includes:
Determining a distinguishing position between the detected current image and the preset current image;
And estimating the failure position of the capacitor to be detected according to the distance between the distinguishing position and a preset side surface of the capacitor to be detected, wherein the preset side surface refers to a side surface of the metal layer close to the capacitor to be detected.
5. The method of claim 1, wherein the capacitor structure comprises an insulating substrate and a metal layer over the insulating substrate, the metal layer comprising a first metal region and a second metal region,
The target side surface comprises a first mapping area and a second mapping area, the first mapping area refers to the mapping area of the first metal area on the target side surface, the second mapping area refers to the mapping area of the second metal area on the target side surface, and the first mapping area and the second mapping area are not overlapped.
6. The method of claim 5, wherein the capacitor structure further comprises a lower plate positioned below the insulating substrate, an upper plate and an insulating dielectric layer positioned between the upper plate and the lower plate are disposed in the insulating substrate,
The upper polar plate is connected with the first metal region through a corresponding first through hole, and the lower polar plate is connected with the second metal region through a corresponding second through hole.
7. The method of claim 6, wherein the capacitor to be measured comprises a first electrode and a second electrode, and the predetermined electrode is the first electrode or the second electrode;
The first electrode is led out from the upper polar plate through the metal layer, and the second electrode is led out from the lower polar plate.
8. A capacitance failure position determination device, characterized in that the capacitance failure position determination device comprises:
The first determining module is used for determining a target side face of the capacitor to be tested and a target connecting point, wherein the target side face refers to a mapping face of a capacitor structure of the capacitor to be tested, and the target connecting point refers to an external connecting point corresponding to a preset electrode of the capacitor to be tested;
The second determining module is configured to determine a side to be detected corresponding to the target side and a point to be connected corresponding to the target connection point, where the side to be detected refers to a side of the capacitor structure exposed by grinding the target side, and the point to be detected refers to a connection point of exposed metal material obtained by delamination of the external connection point;
The detection module is used for connecting the nano probe of the scanning electron microscope to the to-be-connected point, and scanning the side surface to be detected through electron beams of the scanning electron microscope to obtain a detection current image of the capacitor to be detected;
And the estimating module is used for estimating the failure position of the capacitor to be detected by comparing the detected current image with a preset current image.
9. An electronic device, comprising: a processor, a memory and a bus, said memory storing machine readable instructions executable by said processor, said processor and said memory communicating via said bus when the electronic device is running, said machine readable instructions when executed by said processor performing the steps of the capacitance failure location determination method according to any of claims 1 to 7.
10. A computer readable storage medium, characterized in that the computer readable storage medium has stored thereon a computer program which, when executed by a processor, performs the steps of the capacitance failure position determination method according to any of claims 1 to 7.
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