CN106323709A - Preparation method and test method for test sample - Google Patents
Preparation method and test method for test sample Download PDFInfo
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- CN106323709A CN106323709A CN201610613253.5A CN201610613253A CN106323709A CN 106323709 A CN106323709 A CN 106323709A CN 201610613253 A CN201610613253 A CN 201610613253A CN 106323709 A CN106323709 A CN 106323709A
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- Prior art keywords
- test sample
- sample
- preparation
- grid
- substrate
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2202—Preparing specimens therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2866—Grinding or homogeneising
Abstract
The invention discloses a method for preparing a test sample. The method comprises the steps that a sample is provided, wherein the sample has a front side and a back side opposite the front side and includes a substrate, a gate electrode, a dielectric layer and a plurality of plugs; the side, facing the front side of sample, of the substrate is provided with a well region; the inside of the well region is provided with a source electrode region, a drain region and a body region; the front side of the sample is stripped to expose the plugs, the cross section of the sample is ground to expose one longitudinal section of the sample, the front side and back side of the sample are fine-polished respectively, and the front side is fine-polished to be above the well region, and the back side is fine-polished to be below the well region, and then the test sample is obtained. The thickness of the test sample is less than 1.5 microns. The invention also provides a test method. The test samples can be observed by a transmission electron microscopy, and the characteristics of voltage and current of the test sample can be analyzed using nanoprobes.
Description
Technical field
The present invention relates to semiconductor failure analysis technical field, particularly relate to a kind of test sample preparation method and
Method of testing.
Background technology
At semiconductor applications, when product is carried out failure analysis, first pass through de-layer and analyze destination address layer, be prepared as
TEM (transmission electron microscope) chip sample, then re-uses the microstructure of tem observation destination address inefficacy components and parts, from
And judge failure mode, find out the root of inefficacy.For by going layer analysis can not accurately determine the sample of inefficacy components and parts address
Product, need to measure the voltage-current characteristic of doubtful inefficacy components and parts by Nanoprober (nano-probe), by voltage-
Current characteristic curve judges which components and parts is problematic, observes its microstructure by TEM the most again, thus sets up unit's device
Relation between part electrical property failure and physical imperfection.The most any case, TEM is last trace analysis means.
But for not determining address or itself not being the inefficacy case of full processing procedure product (short loop), only
Can be analyzed by the way of TEM.But, owing to the sample of TEM is chip sample, even if tem observation is to abnormal defect,
Chip sample cannot assess whether this defect can have an impact device or circuit further.
Summary of the invention
It is an object of the invention to, it is provided that the preparation method of a kind of test sample, described test sample both can be carried out
Penetrate electron microscope observation, it is also possible to analyze voltage-current characteristic with nano-probe.
For solving above-mentioned technical problem, the present invention provides the preparation method of a kind of test sample, including:
There is provided a sample, described sample to have front and the back side with described vis-a-vis, described sample include substrate,
Grid, dielectric layer, multiple thromboembolism, described substrate is positioned at the side at the described back side, and described substrate has towards the side in described front
Having well region, be provided with source area, drain region and body district in described well region, described grid is positioned at described substrate towards described front
Side, described dielectric layer is positioned at the described substrate side towards described front, and described dielectric layer covers described substrate and grid, institute
Stating thromboembolism to be positioned in described dielectric layer, multiple described thromboembolisms are respectively turned on described grid, source area, drain region and body district；
The front of described sample is peeled off to exposing described thromboembolism；
Described sample is carried out cross section grinding technics, exposes a longitudinal section of described sample；And
Front and the back side to described sample carry out fine polishing respectively, above described front fine polishing to described well region, right
The lower section of described back side fine polishing extremely described well region, to obtain described test sample, the thickness of described test sample is less than 1.5 μm.
Further, in the preparation method of described test sample, before described sample is carried out cross section grinding technics,
Described preparation method also includes:
After stripping, the front of described sample determines a destination address.
Further, in the preparation method of described test sample, after described sample is carried out cross section grinding technics, described
It is 2 μm～10 μm that longitudinal section has the distance of described destination address.
Further, in the preparation method of described test sample, use focused ion bundle to the front of described sample with
And the back side carries out fine polishing.
Further, in the preparation method of described test sample, from described longitudinal section to the front of described sample and
The back side carries out fine polishing, and uses sem observation to stop cutter position.
Further, in the preparation method of described test sample, the observation voltage of described scanning electron microscope is
0.5KV～2KV.
Further, in the preparation method of described test sample, the observation voltage of described scanning electron microscope is
1KV、1.5KV。
Further, in the preparation method of described test sample, the thickness of described test sample is 700nm～1 μm.
Further, in the preparation method of described test sample, above described front fine polishing to described grid.
Further, in the preparation method of described test sample, to 50nm above described front fine polishing to described grid
～at 100nm.
Further, in the preparation method of described test sample, described substrate also has towards the side in described front
Shallow-trench isolation, at lower section 50nm～200nm to described back side fine polishing to described shallow-trench isolation.
Further, in the preparation method of described test sample, use grinding technics that the front of described sample is carried out
Peel off to exposing described thromboembolism.
According to the another side of the present invention, also provide for a kind of method of testing, including:
A test sample, described test sample is provided to use the preparation method of test sample described in as above any one to obtain
Arrive；
Described test sample is put in transmission electron microscope, the front of described test sample is observed；
Described test sample being put on a matrix, the front of described test sample is positioned at and deviates from described matrix；And
Described matrix is put on nano-probe sample stage, uses nano-probe that described test sample is tested.
Further, in described method of testing, the step that described test sample is put on a matrix is included:
Prepare a pit on the matrix；
Described test sample is put in described pit.
Further, in described method of testing, the degree of depth of described pit is the 1/4～3/ of the thickness of described test sample
4。
Further, in described method of testing, described pit and test sample are square, and the length of described pit is
1.1～1.3 times of the length of described test sample, the width of described pit is the 1.1～1.3 of the width of described test sample
Times.
Further, in described method of testing, by thermosetting cement, described test sample is fixed in described pit.
Further, in described method of testing, the material of described matrix is identical with the material of described substrate.
Further, in described method of testing, described matrix is square, the size of described matrix be 5mm × 5mm～
15mm×15mm。
Further, in described method of testing, use nano-probe time described test sample is tested, described in receive
Rice probe contacts the thromboembolism being conducted with described source area, drain region and body district respectively；Or, to described front fine polishing to described grid
Above pole, described nano-probe contacts the thromboembolism being conducted with described grid, source area, drain region and body district respectively.
Compared with prior art, preparation method and the method for testing of the test sample that the present invention provides has following excellent
Point:
The present invention provide test sample preparation method in, first provide a sample, described sample have front and
With the back side of described vis-a-vis, described sample includes substrate, grid, dielectric layer, multiple thromboembolism, and described substrate is positioned at the described back of the body
The side in face, described substrate has well region towards the side in described front, is provided with source area, drain region and body in described well region
District, described grid is positioned at the described substrate side towards described front, and described dielectric layer is positioned at described substrate towards described front
Side, described dielectric layer covers described substrate and grid, and described thromboembolism is positioned in described dielectric layer, and multiple described thromboembolisms are respectively
Turn on described grid, source area, drain region and body district；Then, the front to described sample is peeled off to exposing described thromboembolism；
Then, described sample is carried out cross section grinding technics, expose a longitudinal section of described sample；Afterwards, respectively to described sample
Front and the back side carry out fine polishing, to described front fine polishing to above described well region, to described back side fine polishing to described well region
Lower section, to obtain described test sample, the thickness of described test sample be less than 1.5 μm.Thickness due to described test sample
Less than 1.5 μm, so, described test sample can be put in transmission electron microscope and observe；Further, in described test specimens
Remaining the thromboembolism that described source area, drain region and body district are conducted in product, described test sample can also also use nano-probe
Analyze voltage-current characteristic.
Accompanying drawing explanation
Fig. 1 is the flow chart of the preparation method of an embodiment test sample in the present invention；
Fig. 2 is the flow chart of the preparation method of an embodiment test sample in the present invention；
Fig. 3-Fig. 8 is the test sample of one embodiment of the invention schematic diagram in preparation process；
Fig. 9 is the schematic diagram that in the present invention, an embodiment test sample places on the matrix.
Detailed description of the invention
The sample of TEM of the prior art is chip sample, sees carrying out tem observation, and described chip sample can not enter
The test of row nano-probe.Prior art research is found by inventor, and common device is all four-terminal device, if grid, source
Polar region, drain region and the structural integrity in body district, then the voltage-current characteristic of this device can be carried out analyzing；And for dividing
The situation of analysis PN junction voltage-current characteristic, as long as ensureing source area, drain region and the structural integrity in body district.
Inventor further study show that, if the sample of TEM can ensure that grid, source area, drain region and body district
Structural integrity, then the sample of TEM then can use nano-probe to detect voltage-current characteristic.But the sample of TEM can not be too
Thickness, otherwise the electronics of TEM cannot penetrate the sample of described TEM.If the thickness of described test sample is less than 1.5 μm, then test
Sample can be put in transmission electron microscope and observe.
According to the studies above, the core concept of the present invention is, it is provided that the preparation method of a kind of test sample, such as Fig. 1 institute
Show, including:
Step S11, a sample, described sample is provided to have front and the back side with described vis-a-vis, described sample
Including substrate, grid, dielectric layer, multiple thromboembolism, described substrate is positioned at the side at the described back side, and described substrate is towards described front
Side there is well region, described well region is provided with source area, drain region and body district, described grid is positioned at described substrate towards institute
Stating the side in front, described dielectric layer is positioned at the described substrate side towards described front, and described dielectric layer covers described substrate
And grid, described thromboembolism is positioned in described dielectric layer, multiple described thromboembolisms be respectively turned on described grid, source area, drain region and
Body district；
Step S12, front to described sample are peeled off to exposing described thromboembolism；
Step S13, described sample is carried out cross section grinding technics, expose a longitudinal section of described sample；And
Step S14, respectively front and the back side to described sample carry out fine polishing, to described front fine polishing to described well region
Top, the lower section to described back side fine polishing to described well region, to obtain described test sample, the thickness of described test sample is less than
1.5μm。
Owing to the thickness of described test sample is less than 1.5 μm, so, described test sample can put into transmission electron microscopy
Mirror is observed；Further, described test sample remains the thromboembolism that described source area, drain region and body district are conducted,
Described test sample also can also analyze voltage-current characteristic with nano-probe.
According to the core concept of the present invention, the present invention also provides for a kind of method of testing, as in figure 2 it is shown, include:
Step S21, a test sample, described test sample is provided to use the preparation of test sample described in as above any one
Method obtains；
Step S22, described test sample is put in transmission electron microscope, the front of described test sample is seen
Examine；
Step S23, described test sample being put on a matrix, the front of described test sample is positioned at and deviates from described base
Body；And
Step S24, described matrix is put on nano-probe sample stage, uses nano-probe that described test sample is carried out
Test.
Below in conjunction with schematic diagram, preparation method and the method for testing of the test sample of the present invention are carried out in more detail
Describe, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can revise described here
Invention, and still realize the advantageous effects of the present invention.Therefore, description below is appreciated that for those skilled in the art's
Widely known, and it is not intended as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.In the following description, it is not described in detail known function
And structure, because they can make to due to the fact that unnecessary details and chaotic.Will be understood that opening in any practical embodiments
In Faing, it is necessary to make a large amount of implementation detail to realize the specific objective of developer, such as according to relevant system or relevant business
Limit, an embodiment change into another embodiment.Additionally, it should think that this development is probably complexity and consuming
Time, but it is only routine work to those skilled in the art.
Referring to the drawings the present invention the most more particularly described below in the following passage.Want according to following explanation and right
Book, advantages and features of the invention is asked to will be apparent from.It should be noted that, accompanying drawing all uses the form simplified very much and all uses non-
Ratio accurately, only in order to facilitate, to aid in illustrating lucidly the purpose of the embodiment of the present invention.
Hereinafter refer to Fig. 3-Fig. 9 and illustrate the preparation method of test sample and the method for testing of the present invention.
First, carry out step S11, as it is shown on figure 3, the profile that Fig. 3 is described sample, it is provided that a sample, described sample
Have front Z and with described back surface B relative for front Z, described sample includes substrate 100, described substrate 100 be quasiconductor lining
The end, in the present embodiment, described substrate 100 is silicon substrate.Described substrate 100 is positioned at the side of described back surface B, described substrate
100 have well region 110 towards the side of described front Z, are provided with source area 112, drain region 111 and body in described well region 110
District 113, described source area 112, drain region 111 and body district 113 are respectively positioned on the described well region 110 side towards described front Z.Institute
Stating substrate 100 and have grid 114 in the one side of described front Z, described grid 114 is positioned at described source area 112 and drain electrode
Between district 111.The material of described grid 114 can be polysilicon or metal.Described substrate 100 is towards the one side of described front Z
On be provided with dielectric layer 120, described dielectric layer 120 covers described substrate 100 and grid 114, the material one of described dielectric layer 120
As be the electrolytes such as silicon oxide.Being provided with multiple thromboembolism 121 in described dielectric layer 120, multiple described thromboembolisms 121 are respectively turned on institute
State grid 114, source area 112, drain region 111 and body district 113.The material of described thromboembolism 121 can be tungsten etc..
Additionally, described sample can also include the interconnection structure being positioned on described dielectric layer 120.Such as, described dielectric layer
It is provided with interlayer dielectric 130 on 120, described interlayer dielectric is formed metal level 131, through hole 132, metal level 133, institute
State through hole 132 to be same as turning on metal level 131 and metal level 133.Figure 3 illustrates two metal layers, be respectively as follows: metal level
131 and metal level 133, in other embodiments of the invention, described interconnection layer can also include the metal level of more layers, and this is
It will be appreciated by those skilled in the art that, therefore not to repeat here.In the present embodiment, described substrate 100 is towards described front Z
Side also there is shallow-trench isolation 101.
Then, carrying out step S12, as shown in Figure 4, Fig. 4 is the profile of described sample, enters the front Z of described sample
Row is peeled off to exposing described thromboembolism 121, it is also preferred that the left use grinding technics to peel off the front Z of described sample, until exposing
Described thromboembolism 121.As it is shown in figure 5, the top view that Fig. 5 is described sample, wherein, Fig. 4 is the Fig. 5 profile along AA ' face.
It is also preferred that the left the front Z of described sample determines a destination address after stripping.Concrete, in the present embodiment, such as figure
Shown in 6, as shown in Figure 6, then the front Z at described sample distinguishes labelling stop flag 201 He in the position of described destination address 203
Position mark 202, described position mark 202 includes two perpendicular labellings, and the extension of two described position marks 202 is intersected
Place is described destination address 203, and described position mark 202 is for marking the position of described destination address 203.Described stop flag
201 for identifying the position that grinding stops.
Then, carry out step S13, as it is shown in fig. 7, described sample is carried out cross section grinding technics, expose described sample
A longitudinal section C, in the present embodiment, described longitudinal section C is the Fig. 6 section along AA ' face, it is also preferred that the left described longitudinal section C have institute
The distance stating destination address 203 is 2 μm～10 μm, such as 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm.
Then, step S14, as shown in Figure 8, the profile at longitudinal section C as described in 8 are are carried out.Respectively to described sample
Front Z and back surface B carry out fine polishing, to described front Z fine polishing to above described well region 110, to described back surface B fine polishing to institute
State the lower section of well region 110, thus obtain described test sample 1.Above described front Z fine polishing to described well region 110, to described
The lower section of back surface B fine polishing extremely described well region 110, it is ensured that source area 112, drain region 111 and the structural integrity in body district 113,
Such that it is able to use nano-probe that described test sample is detected PN junction voltage-current characteristic.The thickness H1 of described test sample
Less than 1.5 μm, it is ensured that the electronics of TEM cannot penetrate described test sample.Preferably, the thickness H1 of described test sample is
700nm～1 μm.
It is also preferred that the left above to described front Z fine polishing to described grid 114, it is ensured that the structure of described grid 114 is complete
Whole, such that it is able to use nano-probe that described test sample 1 detects the voltage-current characteristic of device.Preferably, to described just
Above face Z fine polishing extremely described grid 114 at 50nm～100nm, i.e. H2 is 50nm～100nm.In the present embodiment, described substrate
100 also have shallow-trench isolation 101 towards the side of described front Z, it is also preferred that the left to described back surface B fine polishing to described shallow-trench isolation
At lower section 50nm～200nm of 101, i.e. H3 is 50nm～200nm.
It is also preferred that the left use focused ion bundle that front Z and the back surface B of described sample are carried out fine polishing.From described longitudinal section C
Front Z and back surface B to described sample carry out fine polishing, and use sem observation to stop cutter position.Described scanning
The observation voltage of ultramicroscope is 0.5KV～2KV, such as 1KV, 1.5KV, can see described sample from described longitudinal section C
Structure (including grid 114, shallow-trench isolation 101 etc.), thus easily control stop cutter position.
The method of testing of test sample described in detailed description below.
First, step S21 is carried out, it is provided that described test sample；
Then, carry out step S22, use glass pipette that described test sample is put into the copper mesh of transmission electron microscope
On, in the front Z-direction of described test sample, the front Z of described test sample is observed；
Afterwards, carry out step S23, as it is shown in figure 9, described test sample 1 be put on a matrix 300, described test specimens
The front Z of product 1 is positioned at and deviates from described matrix.The material of described matrix is identical with the material of described substrate, in the present embodiment, and institute
State matrix 300 for pure silicon sheet.Described matrix 300 is square, and the size of described matrix 300 is 5mm × 5mm～15mm × 15mm.
Concrete:
Preparing a pit 301 on described matrix 300, the degree of depth of described pit 301 is the thickness H1 of described test sample 1
1/4～3/4.Described pit 301 and test sample 1 are square, and length W2 of described pit 301 is described test sample 1
1.1～1.3 times of length W1, the width K2 of described pit 301 is 1.1～1.3 times of the width K1 of described test sample 1.
Then use shifting sample table glass pin needle point to be coated with in the hole dug and be covered with thermosetting cement (such as AB glue), use and move sample
Described test sample 1 is transferred to, in the described pit 301 of the most coated good thermosetting cement, make described test specimens from copper mesh by platform
The back surface B of product 1 sticks together with described matrix 300；
Finally, the described matrix 300 being stained with described test sample 1 is heated about 8min at a temperature of about 180 DEG C,
Making thermosetting cement be fully cured, what described test sample 1 was smooth is fixed in described pit 301.
Afterwards, carry out step S24, described matrix 300 is put on nano-probe sample stage, use nano-probe to described
Test sample 1 is tested.Concrete, when using nano-probe to test described test sample 1, described nano-probe divides
The thromboembolism 121 Jie Chu not being conducted with described source area 112, drain region 111 and body district 114, to test.At the present embodiment
In, above to described front Z fine polishing to described grid 114, so, described nano-probe contacts and described grid respectively
114, the thromboembolism 121 that source area 112, drain region 111 and body district 114 are conducted, to test.
In sum, the present invention proposes the preparation method of a kind of test sample, first provides a sample, described sample just to have
Face and the back side with described vis-a-vis, described sample includes substrate, grid, dielectric layer, multiple thromboembolism, and described substrate is positioned at
The side at the described back side, described substrate has well region towards the side in described front, is provided with source area, drain electrode in described well region
District and body district, described grid is positioned at the described substrate side towards described front, and described dielectric layer is positioned at described substrate towards institute
Stating the side in front, described dielectric layer covers described substrate and grid, and described thromboembolism is positioned in described dielectric layer, multiple described bolts
Plug is respectively turned on described grid, source area, drain region and body district；Then, the front of described sample is peeled off to exposing
State thromboembolism；Then, described sample is carried out cross section grinding technics, expose a longitudinal section of described sample；Afterwards, respectively to institute
Front and the back side of stating sample carry out fine polishing, above described front fine polishing to described well region, to described back side fine polishing to institute
Stating the lower section of well region, to obtain described test sample, the thickness of described test sample is less than 1.5 μm.
Owing to the thickness of described test sample is less than 1.5 μm, so, described test sample can put into transmission electron microscopy
Mirror is observed；Further, described test sample remains the thromboembolism that described source area, drain region and body district are conducted,
Described test sample also can also analyze voltage-current characteristic with nano-probe.
Obviously, those skilled in the art can carry out various change and the modification essence without deviating from the present invention to the present invention
God and scope.So, if these amendments of the present invention and modification belong to the scope of the claims in the present invention and equivalent technologies thereof
Within, then the present invention is also intended to comprise these change and modification.
Claims (20)
1. the preparation method of a test sample, it is characterised in that including:
Thering is provided a sample, described sample to have front and the back side with described vis-a-vis, described sample includes substrate, grid
Pole, dielectric layer, multiple thromboembolism, described substrate is positioned at the side at the described back side, and described substrate has towards the side in described front
Well region, is provided with source area, drain region and body district in described well region, described grid is positioned at described substrate towards the one of described front
Side, described dielectric layer is positioned at the described substrate side towards described front, and described dielectric layer covers described substrate and grid, described
Thromboembolism is positioned in described dielectric layer, and multiple described thromboembolisms are respectively turned on described grid, source area, drain region and body district；
The front of described sample is peeled off to exposing described thromboembolism；
Described sample is carried out cross section grinding technics, exposes a longitudinal section of described sample；And
Front and the back side to described sample carry out fine polishing respectively, above described front fine polishing to described well region, to described
The lower section of back side fine polishing extremely described well region, to obtain described test sample, the thickness of described test sample is less than 1.5 μm.
2. the preparation method of test sample as claimed in claim 1, it is characterised in that grind work described sample being carried out cross section
Before skill, described preparation method also includes:
After stripping, the front of described sample determines a destination address.
3. the preparation method of test sample as claimed in claim 2, it is characterised in that described sample is carried out cross section grinding technics
After, it is 2 μm～10 μm that described longitudinal section has the distance of described destination address.
4. the preparation method of test sample as described in any one in claims 1 to 3, it is characterised in that use focused ion
Restraint front and the back side to described sample and carry out fine polishing.
5. the preparation method of test sample as claimed in claim 4, it is characterised in that from described longitudinal section to described sample just
Face and the back side carry out fine polishing, and use sem observation to stop cutter position.
6. the preparation method of test sample as claimed in claim 5, it is characterised in that the observation electricity of described scanning electron microscope
Pressure is 0.5KV～2KV.
7. the preparation method of test sample as claimed in claim 6, it is characterised in that the observation electricity of described scanning electron microscope
Pressure is 1KV, 1.5KV.
8. the preparation method of test sample as claimed in claim 1, it is characterised in that the thickness of described test sample is 700nm
～1 μm.
9. the preparation method of test sample as claimed in claim 1, it is characterised in that in described front fine polishing to described grid
Side.
10. the preparation method of test sample as claimed in claim 9, it is characterised in that to described front fine polishing to described grid
At 50nm～100nm of top.
The preparation method of 11. test samples as claimed in claim 1, it is characterised in that described substrate is towards the one of described front
Side also has shallow-trench isolation, at lower section 50nm～200nm to described back side fine polishing to described shallow-trench isolation.
The preparation method of 12. test samples as claimed in claim 1, it is characterised in that use grinding technics to described sample
Front carries out peeling off to exposing described thromboembolism.
13. 1 kinds of method of testings, it is characterised in that including:
Thering is provided a test sample, described test sample uses the system of test sample as described in any one in claim 1 to 12
Preparation Method obtains；
Described test sample is put in transmission electron microscope, the front of described test sample is observed；
Described test sample being put on a matrix, the front of described test sample is positioned at and deviates from described matrix；And
Described matrix is put on nano-probe sample stage, uses nano-probe that described test sample is tested.
14. method of testings as claimed in claim 13, it is characterised in that described test sample is put into the step on a matrix
Including:
Prepare a pit on the matrix；
Described test sample is put in described pit.
15. method of testings as claimed in claim 14, it is characterised in that the degree of depth of described pit is the thickness of described test sample
The 1/4～3/4 of degree.
16. method of testings as claimed in claim 14, it is characterised in that described pit and test sample are square, described
The length of pit is 1.1～1.3 times of the length of described test sample, and the width of described pit is the width of described test sample
1.1～1.3 times.
17. method of testings as claimed in claim 14, it is characterised in that described test sample is fixed to by thermosetting cement
In described pit.
18. method of testings as claimed in claim 13, it is characterised in that the material of described matrix and the material phase of described substrate
With.
19. method of testings as claimed in claim 13, it is characterised in that described matrix is square, and the size of described matrix is
5mm × 5mm～15mm × 15mm.
20. method of testings as claimed in claim 13, it is characterised in that use nano-probe that described test sample is surveyed
During examination, described nano-probe contacts the thromboembolism being conducted with described source area, drain region and body district respectively；Or, to described front
Fine polishing is to above described grid, and described nano-probe contacts respectively and is conducted with described grid, source area, drain region and body district
Thromboembolism.
Priority Applications (1)
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