CN117878088A - Ground shield structure and semiconductor device - Google Patents
Ground shield structure and semiconductor device Download PDFInfo
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- CN117878088A CN117878088A CN202211227456.2A CN202211227456A CN117878088A CN 117878088 A CN117878088 A CN 117878088A CN 202211227456 A CN202211227456 A CN 202211227456A CN 117878088 A CN117878088 A CN 117878088A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 143
- 239000002184 metal Substances 0.000 claims abstract description 143
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 229920005591 polysilicon Polymers 0.000 claims abstract description 35
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- 230000001965 increasing effect Effects 0.000 abstract description 16
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000270295 Serpentes Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical class [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
A ground shield structure and a semiconductor device, the ground shield structure comprising: a base, the base comprising a substrate; a plurality of active regions distributed within the substrate; the polysilicon grid bars are distributed on the active areas; a first conductive structure on the plurality of polysilicon bars, the first conductive structure comprising: a plurality of first metal segments, wherein at least 2 of the first metal segments are connected in series; the grounding ring surrounds the first conductive structure and is electrically connected with the first conductive structure. The first metal segments are connected in series, so that the resistance of the first conductive structure can be effectively increased, the overall resistance of the grounding shielding structure is increased, the substrate loss can be effectively suppressed, and the quality factor can be improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and in particular, to a ground shield structure and a semiconductor device.
Background
In existing integrated circuits, inductance is an important semiconductor device. Inductors are widely used in radio frequency circuits such as low noise amplifiers (Low Noise Amplifier, LNA) and Voltage Controlled Oscillators (VCO). The performance parameters of the inductor directly affect the performance of the integrated circuit.
The inductances in integrated circuits are mostly planar inductances, such as planar spiral inductances. Compared with the traditional wire-wound inductor, the planar inductor has the advantages of low cost, easy integration, low noise and low power consumption, and more importantly, the planar inductor is compatible with the existing integrated circuit technology.
An important indicator of how good the inductance is the quality factor Q. The higher the quality factor Q, the better the performance that represents the inductance. The definition of the inductance quality factor Q is: the ratio of the energy stored in the inductor to the energy lost per oscillation period.
But the quality factor of the existing inductor is often not ideal.
Disclosure of Invention
The invention solves the problem of how to further improve the quality factor of the inductor.
In order to solve the above problems, the present invention provides a ground shield structure, comprising:
a base including a substrate; a plurality of active regions distributed within the substrate; the polysilicon gate strips are distributed on the active areas; the first conductive structure is located on a plurality of polycrystalline silicon grid bars, and the first conductive structure includes: a plurality of first metal segments, wherein at least 2 first metal segments are connected in series; the grounding ring surrounds the first conductive structure and is electrically connected with the first conductive structure.
Optionally, the first conductive structure includes: a plurality of conductive portions, the conductive portions including: a plurality of first metal segments connected in series.
Optionally, the number of first metal segments in different conductive portions is equal.
Optionally, the method further comprises: and the second metal sections are positioned between the 2 first metal sections.
Optionally, 2 second metal segments located at two sides of the same first metal segment along the first direction are respectively connected with two ends of the first metal segment along the second direction, wherein the second direction intersects with the first direction, and the second direction is the extending direction of the first metal segment.
Optionally, the ground ring includes: a plurality of mutually insulated connection parts; the plurality of connecting parts are connected with the plurality of conductive parts in a one-to-one correspondence.
Optionally, the connection portion is connected to a first metal segment of the conductive portion that is furthest away from the conductive portion.
Optionally, the ground ring includes: 2 connecting parts; the first conductive structure includes: 2 conductive parts.
Optionally, the conductive portion comprises half the number of first metal segments.
Optionally, the ground shield structure further includes: and the third metal section is connected with the grounding ring and the first conductive structure.
Optionally, the third metal segment connects the interconnect end of the connection portion and the conductive portion, and the interconnect end of the connection portion is one end of the connection portion.
Optionally, 1 connection has 1 ground point, and the ground point is located at a midpoint position of the connection.
Optionally, the interconnecting ends of adjacent connecting portions are remote from each other.
Alternatively, a third metal segment spans the connected conductive portion, one end of the third metal segment is connected to the ground ring, and the other end is connected to the first metal segment furthest from the ground ring.
Optionally, the plurality of active regions are distributed in an array to form an active region array; the polysilicon grid bars extend along a first direction, and a plurality of polysilicon grid bars are arranged in an array along the first direction and a second direction; the first metal sections extend along the second direction, and the plurality of first metal sections are arranged in parallel along the first direction; wherein the first direction is one of a row direction and a column direction of the active area array, and the second direction is the other of the row direction and the column direction of the active area array.
Correspondingly, the invention also provides a semiconductor device, which comprises:
the grounding shielding structure is provided with a grounding shielding structure; the sensing element is positioned on the grounding shielding structure.
Optionally, the projection of the sensing element onto the surface of the substrate is within the projection range of the ground ring onto the surface of the substrate.
Optionally, the inductor element is an inductance or a transformer.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the technical scheme of the invention, at least 2 first metal segments in the first conductive structure are connected in series. The first metal segments are connected in series, so that the resistance of the first conductive structure can be effectively increased, the overall resistance of the grounding shielding structure is increased, the substrate loss can be effectively suppressed, and the quality factor can be improved.
In an alternative of the invention, the conductive part comprises half the number of first metal segments. After the half-and-half first metal sections are respectively connected in series, the resistance of the first conductive structure can be improved as much as possible through the grounding of the 2 connecting parts, and the substrate loss can be restrained as much as possible.
In the alternative scheme of the invention, the connecting part is connected with the first metal section with the farthest distance in the conductive part, so that the length of the third metal section can be effectively prolonged, the purpose of increasing the resistance is achieved, the resistance of the grounding shielding structure is effectively improved, and the substrate loss is restrained.
Drawings
Fig. 1 is a schematic structural view of a semiconductor device;
FIG. 2 is a schematic top view of the ground shield structure of the semiconductor device of FIG. 1;
FIG. 3 is an enlarged schematic view of the structure within the dashed square in the ground shield structure of FIG. 2;
FIG. 4 is a schematic top view of an embodiment of the grounding shield of the present invention;
FIG. 5 is an enlarged schematic view of the structure within the dashed box in the embodiment of the grounding shield shown in FIG. 4;
FIG. 6 is a schematic diagram of an equivalent circuit of the resistor of the embodiment of the ground shield structure of FIGS. 4 and 5;
FIG. 7 is a schematic top view of an inductive element in an embodiment of a semiconductor device of the present invention;
fig. 8 is a graph showing the variation of substrate resistance at different frequencies for the semiconductor device embodiment of fig. 4-7;
fig. 9 is a graph showing the variation of Q values of the quality factors at different frequencies in the embodiment of the semiconductor device shown in fig. 4 to 7.
Detailed Description
As known from the background art, the inductance in the prior art has the problem of non-ideal quality factor. The reason for the problem of non-ideal quality factor of the inductance analysis is combined with the following steps:
referring to fig. 1, a schematic structure of a semiconductor device is shown.
Wherein the semiconductor device includes: a metal coil 11 located on a substrate (not shown).
When a signal passes through the closed metal coil 11, an induced magnetic field is formed in the middle of the metal coil 11; the induced magnetic field formed forms eddy currents in the underlying metal and substrate, thereby creating substrate loss; and a coupling electric field is formed between the metal coil 11 and the substrate to generate a displacement current, thereby also generating a substrate loss.
The substrate loss affects the quality factor Q of the semiconductor device. As shown in fig. 1, one method of improving the quality factor Q is to provide a ground shield structure 12 under the metal coil 11, the ground shield structure 12 being connected to the ground terminal through a ground ring 13. The ground shield structure 12 can shield the induced electric field and form a high-resistance substrate, thereby achieving suppression of substrate loss.
Referring to fig. 2 and 3 in combination, fig. 2 is a schematic top view of a ground shield structure in the semiconductor device shown in fig. 1; fig. 3 is an enlarged schematic view of the structure within the dashed square in the ground shield structure shown in fig. 2.
Specifically, the ground shield structure includes: a base including a substrate (not shown in the figure); a plurality of active regions 14 (shown as filled in fig. 3), the plurality of active regions 14 being distributed within the substrate; a plurality of polysilicon bars 15 (as shown in fig. 3), the plurality of polysilicon bars 15 being distributed over the plurality of active areas 14; the first conductive structure 16, the first conductive structure 16 is located on the plurality of polysilicon bars 15, the first conductive structure 16 includes: a plurality of first metal segments 16m; a ground ring 13, the ground ring 13 surrounding the first conductive structure 16, the ground ring 16 having a ground point thereon; the second conductive structure 17, the second conductive structure 17 connects the first conductive structure 16 and the ground ring 13.
As shown in fig. 2 and 3, the second conductive structure 17 is connected to each first metal segment 16a of the first conductive structure 16 through the plug 18 and then connected to the ground ring 13, that is, all the first metal segments 16m of the first conductive structure 16 are connected in parallel to the second conductive structure 17; also as shown in fig. 2, the plug 18 is located at the middle position of each first metal segment 16, that is, each first metal segment 16m in the first conductive structure 16 is equally divided into two parts and connected in parallel to the second conductive structure 17.
The parallel connection mode can reduce the resistance between the grounding points, so that the resistance is reduced, and the quality factor Q is further improved; while high resistance substrates tend to be costly.
In order to solve the technical problem, the present invention provides a grounding shielding structure, including:
a base including a substrate; a plurality of active regions distributed within the substrate; the polysilicon gate strips are distributed on the active areas; the first conductive structure is located on a plurality of polycrystalline silicon grid bars, and the first conductive structure includes: a plurality of first metal segments, wherein at least 2 first metal segments are connected in series; the grounding ring surrounds the first conductive structure and is electrically connected with the first conductive structure.
According to the technical scheme, in the first conductive structure, at least 2 first metal segments are connected in series. The first metal segments are connected in series, so that the resistance of the first conductive structure can be effectively increased, the overall resistance of the grounding shielding structure is increased, the substrate loss can be effectively suppressed, and the quality factor can be improved.
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
Referring to fig. 4 and 5, there is shown a schematic structural view of an embodiment of the grounding shield of the present invention, wherein fig. 4 is a schematic structural view from above of an embodiment of the grounding shield; fig. 5 is an enlarged view of the structure in the dashed box 101 in the embodiment of the grounding shield structure shown in fig. 4.
Specifically, the ground shield structure includes: a base including a substrate; a plurality of active regions 111, the plurality of active regions 111 being distributed within the substrate; a plurality of polysilicon bars 112, the plurality of polysilicon bars 112 being distributed over the plurality of active regions 111; the first conductive structure 120, the first conductive structure 120 is located on the plurality of polysilicon bars 112, and the first conductive structure 120 includes: a plurality of first metal segments 121, wherein at least 2 first metal segments 121 are connected in series; the ground ring 130, the ground ring 130 surrounds the first conductive structure 120 and is electrically connected with the first conductive structure 120.
In the first conductive structure 120, at least 2 first metal segments 121 are connected in series. By connecting the first metal segments 121 in series, the resistance of the first conductive structure 120 can be effectively increased, so that the overall resistance of the ground shielding structure can be increased, substrate loss can be effectively suppressed, and the quality factor can be improved.
In this embodiment, the substrate is the process foundation and mechanical support for the subsequent structure.
In the semiconductor device, the ground shield structure is generally integrated with other semiconductor structures such as transistors on the same substrate, and thus the ground shield structure is formed in the same manufacturing process as the other semiconductor junctions such as transistors.
In some embodiments of the invention, the material of the substrate is monocrystalline silicon. In other embodiments of the present invention, the material of the substrate may also be selected from polysilicon or amorphous silicon; the material of the substrate may also be selected from other semiconductor materials such as germanium, gallium arsenide, or silicon germanium compounds. The substrate may also be provided with an epitaxial layer or a silicon-on-epitaxial structure.
As shown in fig. 4 and 5, in some embodiments of the present invention, a semiconductor structure integrated with a ground shield structure and on the same substrate has an active region 111 and polysilicon gate strips 112, wherein the active region 111 is used to form an active device and the polysilicon gate strips 112 are used to form a gate structure in other semiconductor structures; the active region 111 and the polysilicon grid 112 in the substrate in the grounding shielding structure are formed in the same process as the active region 111 and the polysilicon grid 112 in other semiconductor structures; forming the active region 112 and the polysilicon structure 114 within the base enables the ground shield structure to be formed simultaneously with other semiconductor structures on the substrate such that the ground shield structure is compatible with the formation processes of the other semiconductor structures.
In some embodiments of the present invention, the plurality of active regions 111 are distributed in an array to form an active region array; the polysilicon grid bars 112 extend along a first direction H, and a plurality of polysilicon grid bars 112 are arranged in an array along the first direction H and a second direction V; wherein the first direction H is one of a row direction and a column direction of the active area array, and the second direction V is the other of the row direction and the column direction of the active area array. In the embodiment shown in fig. 5, the first direction H is a column direction of the active area array, and the second direction V is a row direction of the active area array.
The active regions 111 are arranged in an array mode, so that the area of a single active region 111 in a grounding shielding structure can be effectively reduced on the premise that the active regions 111 in other semiconductor structures are formed simultaneously, the process uniformity and the process yield can be ensured, and meanwhile, the resistance of a substrate is increased to ensure the shielding effect.
The polysilicon grid bars 112 are elongated extending along the first direction H, and the plurality of polysilicon grid bars 112 are arranged in parallel along the second direction V, so that the bending structure is avoided to reduce the difficulty of the forming process of the polysilicon structure 112, and meanwhile, the polysilicon grid bars 112 and the polysilicon grid bars 112 in other semiconductor structures are ensured to be formed in the same process, so that the process uniformity and the process yield are ensured.
In the embodiment shown in fig. 5, the polysilicon bars 112 span the active region 112, i.e., the polysilicon bars 112 extend from one side edge of the active region 111 to the other side edge along the first direction H of extension, and the polysilicon bars 112 are located directly above the active region 111.
With continued reference to fig. 4, the first conductive structure 120 includes a plurality of first metal segments 121, wherein at least 2 first metal segments 121 are connected in series.
In some embodiments of the present invention, the semiconductor structure integrated with the ground shield structure and the same substrate further has a metal interconnection structure, and the first conductive structure 120 and the metal interconnection structure in other semiconductor structures are formed in the same process to ensure process uniformity and yield.
In some embodiments of the present invention, the first metal segments 121 extend along the second direction V, and the plurality of first metal segments 121 are arranged in parallel along the first direction H. As shown in fig. 5, the first metal segment 121 is perpendicular to the polysilicon grid 112; and along the second direction of extension V, the first metal segments 121 span the active regions 111 distributed in an array and the polysilicon bars 112 arranged in parallel. The first metal segment 121 extends along the second direction V, and the unidirectionally extending metal segment can effectively avoid formation of an annular circuit, which is beneficial to inhibiting formation of eddy currents.
Specifically, the width of the first metal segments 121 is in the range of 20nm to 50 μm, the interval between adjacent first metal segments 121 is in the range of 20nm to 50 μm, that is, the size of the first metal segments 121 is in the range of 20nm to 50 μm along the first direction H, and the size of the gap between adjacent first metal segments 121 is in the range of 20nm to 50 μm.
It should be noted that, the ground shielding structure further includes: dielectric material is filled between adjacent polysilicon bars 112 and adjacent first metal segments 121 to achieve insulation. Specifically, the dielectric material is silicon oxide. In other embodiments of the present invention, the dielectric material may be other low-K materials or ultra-low-K materials.
In some embodiments of the present invention, the first conductive structure 120 includes: the plurality of conductive portions 122, the conductive portions 122 include: the plurality of first metal segments 121 connected in series, that is, the plurality of first metal segments 121 in the same conductive portion 122 are all connected in series. In the embodiment shown in fig. 4, the first conductive structure 120 includes: 2 conductive portions 122.
In some embodiments of the present invention, the number of first metal segments 121 within different conductive portions 122 is equal. The number of the first metal segments 121 in the plurality of conductive portions 122 of the first conductive structure 120 is made equal, so that the resistance of the ground shielding structure can be effectively increased. In the embodiment shown in fig. 4, the number of conductive portions 122 is 2; the conductive portion 122 thus includes half the number of first metal segments 121, and half the number of first metal segments 121 within the conductive portion 122 are all connected in series.
In some embodiments of the present invention, the ground shield structure further includes: the second metal segments 141, the second metal segments 141 being located between 2 first metal segments 121. The second metal segment 141 is used to connect 2 first metal segments 121 to achieve the series connection of the first metal segments 121.
Specifically, the width of the second metal segment 141 is in the range of 20nm to 50 μm, that is, the size of the second metal segment 141 is in the range of 20nm to 50 μm along the second direction V.
As shown in fig. 4, 1 second metal segment 141 is disposed between any adjacent 2 first metal segments 121 in the same conductive portion 122; the second metal segment 141 and the adjacent 2 first metal segments 121 are located in different layers, but at the substrate surface, the projection of the second metal segment 141 and the projection of the adjacent 2 first metal segments 121 have overlapping positions where through holes are provided to achieve electrical connection between the second metal segment 141 and the first metal segments 121.
In some embodiments of the present invention, 2 second metal segments 141 located on two sides of the same first metal segment 121 along the first direction V are respectively connected to two ends of the first metal segment 121 along the second direction H, where the second direction H intersects the first direction V, and the second direction H is the extending direction of the first metal segment 121. As shown in fig. 4, the plurality of first metal segments 121 in the same conductive portion 122 are connected by the plurality of second metal segments 141 to form a serpentine shape, so that the resistance of the conductive portion 122 can be increased as much as possible to increase the resistance of the ground shielding structure.
In the present embodiment, the ground ring 130 has a ground point 131 for providing connection to ground.
It should be noted that the ground ring 130 surrounds the first conductive structure 120, and thus, on the surface of the substrate, the projection of the first conductive structure 120 is located within the projection of the ground ring 130.
In some embodiments of the present invention, the ground ring 130 is divided into a plurality of mutually insulated portions to avoid forming a loop in the ground ring 130, that is, the ground ring 130 includes: a plurality of mutually insulated connection portions 132, each connection portion 132 having a ground point 131; the plurality of conductive portions 122 of the first conductive structure 120 are connected to the plurality of connection portions 132 of the ground ring 130 in a one-to-one correspondence, so that each ground point 131 is connected to one conductive portion 122 to increase the resistance of the ground shielding structure.
In the embodiment shown in fig. 4, the ground ring 130 is divided into 2 parts, that is, the ground ring 130 includes: 2 connection portions 132; the ground ring 130 has 2 openings, the ground ring 130 is broken at the opening positions, and the ends of the connection portions 132 are formed at both sides of the openings. The 2 conductive portions 122 and the 2 connection portions 132 of the first conductive structure 120 are respectively connected correspondingly.
Note that, each of the 2 connection portions 132 has a ground point 131, which is divided into a ground point P3 and a ground point P4.
In some embodiments of the present invention, the ground shield structure further includes: the third metal segment 142, the third metal segment 142 connects the ground ring 130 and the first conductive structure 120.
The third metal segment 142 is used to implement grounding of the first conductive structure 120 through the grounding ring 130.
As shown in fig. 4, the third metal segment 142 connects the interconnection end 133 of the connection portion 132 and the conductive portion 122, and the interconnection end 133 of the connection portion 132 is one end of the connection portion 132. Specifically, the third metal segment 142 is located on the same layer as the second metal segment 142 and on a different layer from the first metal segment 141. On the substrate surface, the projection of the third metal segment 142 and the projection of the interconnect end 133 of the connected connection portion 133, the projection of the first metal segment 121 of the connected conductive portion 122 have an overlap, respectively, at which an electrical connection is made through a via.
Specifically, the width of the third metal segment 142 is in the range of 20nm to 50 μm, that is, the size of the third metal segment 142 is in the range of 20nm to 50 μm along the second direction V.
It should be noted that, dielectric materials are filled between the first metal segment 121, the second metal segment 141 and the third metal segment 142, so as to realize a through hole for electrical connection, and the through hole penetrates through the dielectric materials to realize electrical connection.
In some embodiments, 1 connection 132 has 1 ground point 131, and the ground point 131 is located at the midpoint of the connection 132, that is, the ground point 131 is equidistant from both ends of the connection 132.
In some embodiments of the present invention, the connection portion 132 is connected to the first metal segment 121 of the conductive portion 122 that is farthest from the interconnection end 133. Since the first metal segments 121 in the conductive portion 122 are all connected, the grounding of the conductive portion 122 can be achieved as long as 1 first metal segment 122 in the conductive portion 122 is electrically connected with the connection portion 132; the electrical connection is made through the first metal segment 121 furthest from the interconnect 133 to extend the circuit connection length as much as possible for the purpose of increasing resistance.
As shown in fig. 4, the third metal segment 142 spans the connected conductive portion 122, and one end of the third metal segment 132 is connected to the ground ring 130, and the other end is connected to the first metal segment 121 farthest from the ground ring. On the substrate surface, the projection of the third metal segment 142 and the projection of the interconnect end 133 of the connected connection 132 and the projection of the connected first metal segment 121 have an overlap, respectively, where electrical connection is achieved by a via.
It should be noted that in some embodiments of the present invention, the interconnection ends 133 of the adjacent connection portions 132 are far away from each other, so that the distance between the third metal segments 142 connected to the different connection portions 132 is pulled as far as possible to reduce mutual interference. In the embodiment shown in fig. 4, the interconnection ends 133 of the 2 connection portions 132 are respectively located at two ends of the grounding ring 130 in the radial direction; the 2 third metal segments 142 connected to the 2 connection portions 132, respectively, extend from the center of the ground ring 130 to both sides in the radial direction to be connected to the corresponding interconnection ends 133.
Referring to fig. 6 in combination, a schematic structural diagram of an equivalent circuit of the ground shield structure resistance shown in fig. 4 and 5 is shown.
The ground point P3 and the ground point P4 are connected in parallel with each other, and thus the ground shield structure is divided into 2 parts, which are connected in series to the ground point P3 and the ground point P4, respectively.
Wherein the resistance R P3 And resistance R P4 The connection resistances of the ground point P3 and the ground point P4 are respectively shown; resistor R 3 Con3 And resistance R 4 Con4 The resistances of the second metal segment and the third metal segment connected to the ground point P3 and the ground point P4, respectively; resistor RPSG3 and resistor RPSG4 represent the conductance of the first conductive structure connected to ground point P3 and ground point P4, respectivelyResistance of the electrical part.
Because a plurality of first metal segments in the same conductive part are connected end to end through the second metal segments to form a snake, the resistance of each conductive part can be effectively increased, and larger resistance RPSG3 and resistance RPSG4 are obtained; and the connection part is connected with the first metal section of the conductive part which is farthest from the interconnection end, so that the third metal section spans the connected conductive part to prolong the length of the third metal section, thereby obtaining larger resistance R 3 Con3 And resistance R 4 Con4 The method comprises the steps of carrying out a first treatment on the surface of the The resistance of the series connection of the ground point P3 and the ground point P4 is larger; the larger resistance can effectively inhibit the substrate loss and improve the quality factor.
Correspondingly, the invention further provides a semiconductor device.
Referring to fig. 4 through 7, schematic structural diagrams of an embodiment of a semiconductor device are shown.
The semiconductor device includes: as shown in fig. 4 and 5, the ground shield structure is the ground shield structure of the present invention; the sensing element is positioned on the grounding shielding structure.
The ground shield structure is used to suppress substrate loss.
Specifically, the grounding shielding structure is the grounding shielding structure of the invention. The specific technical scheme of the grounding shielding structure refers to the foregoing embodiment of the grounding shielding structure, and the disclosure is not repeated herein.
Referring in conjunction to fig. 7, a schematic top view of the sensing element in the semiconductor device of the present invention is shown.
The induction element is arranged on the grounding shielding structure, and the grounding shielding structure can effectively inhibit displacement current formed by a coupling electric field formed between the induction element and the substrate and can shield a magnetic field formed by the induction element to inhibit eddy current formed in the substrate.
In some embodiments of the invention, the projection of the sensing element onto the surface of the substrate is within the projection of the ground ring onto the surface of the substrate. Specifically, the inductive element is a transformer or an inductor.
As shown in fig. 7, the inductive element includes a coil 202. Specifically, the number of turns of the coil 202 is 1, the radius R of the coil 202 is 30 micrometers, and the width D of the coil 202 is 8 micrometers.
Referring to fig. 8 and 9, wherein fig. 8 illustrates the variation of substrate resistance at different frequencies for the semiconductor device embodiments of fig. 4-7; fig. 9 shows the variation of the Q value of the quality factor at different frequencies for the semiconductor device embodiments shown in fig. 4 to 7.
In FIG. 8, the horizontal axis represents the input signal frequency in 10 9 Hz; the vertical axis represents the Q value of the quality factor, with the unit being 1; wherein solid line 208 represents the substrate resistance as a function of input signal frequency for the semiconductor device embodiments of the present invention shown in fig. 4-7; the solid line 108 represents the substrate resistance of the semiconductor device shown in fig. 1-3 as a function of the frequency of the input signal.
As can be seen from fig. 8, the semiconductor device embodiment of the present invention shown in fig. 4 to 7 has a higher substrate resistance than the semiconductor device shown in fig. 1 to 3. The substrate resistances of the 2 semiconductor devices differ by 31.6%.
In FIG. 9, the horizontal axis represents the input signal frequency in 10 9 Hz; the vertical axis represents the Q value of the quality factor, with the unit being 1; wherein the solid line 209 represents the variation of the Q value of the quality factor with the frequency of the input signal for the semiconductor device embodiments of the present invention shown in fig. 4 to 7; the solid line 109 shows the variation of the Q value of the quality factor of the semiconductor device shown in fig. 1 to 3 with the frequency of the input signal.
As can be seen from fig. 9, the semiconductor device embodiments of the present invention shown in fig. 4 to 7 have a higher Q-value of the quality factor than the semiconductor devices shown in fig. 1 to 3. The quality factor Q values of the 2 semiconductor devices differ by a maximum of 9.8%.
In summary, in the first conductive structure, at least 2 first metal segments are connected in series. The first metal segments are connected in series, so that the resistance of the first conductive structure can be effectively increased, the overall resistance of the grounding shielding structure is increased, the substrate loss can be effectively suppressed, and the quality factor can be improved.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (18)
1. A ground shield structure, comprising:
a base, the base comprising a substrate; a plurality of active regions distributed within the substrate; the polysilicon grid bars are distributed on the active areas;
a first conductive structure on the plurality of polysilicon bars, the first conductive structure comprising: a plurality of first metal segments, wherein at least 2 of the first metal segments are connected in series;
the grounding ring surrounds the first conductive structure and is electrically connected with the first conductive structure.
2. The ground shield structure of claim 1, wherein the first conductive structure comprises: a plurality of conductive portions, the conductive portions comprising: a plurality of said first metal segments connected in series.
3. The ground shield structure of claim 2, wherein the number of said first metal segments in different conductive portions is equal.
4. A ground shield structure according to any one of claims 1 to 3, further comprising: and the second metal section is positioned between 2 first metal sections.
5. The ground shield structure of claim 4, wherein 2 second metal segments located on both sides of the same first metal segment along a first direction are respectively connected to both ends of the first metal segment along a second direction, wherein the second direction intersects the first direction, and the second direction is an extending direction of the first metal segment.
6. The ground shield structure of claim 2, wherein said ground ring comprises: a plurality of mutually insulated connection parts;
the plurality of conductive parts are connected with the plurality of connecting parts in a one-to-one correspondence.
7. The ground shield structure of claim 6, wherein said ground ring comprises: 2 said connecting portions; the first conductive structure includes: and 2 conductive parts.
8. The ground shield structure of claim 7, wherein the conductive portion includes half the number of first metal segments.
9. The ground shield structure of claim 1 or 6, further comprising: and a third metal segment connecting the ground ring and the first conductive structure.
10. The ground shield structure of claim 9, wherein the third metal segment connects an interconnect end of the connection portion, which is one end of the connection portion, with the conductive portion.
11. The ground shield structure of claim 10, wherein 1 of said connection portions has 1 ground point located at a midpoint of said connection portions.
12. The ground shield structure of claim 10, wherein the interconnecting ends of adjacent connection portions are remote from each other.
13. The ground shield structure of claim 10, wherein the connection portion is connected to a first metal segment of the conductive portion that is furthest from the interconnect end.
14. The ground shield of claim 13 wherein said third metal segment spans the connected conductive portion, one end of said third metal segment being connected to said ground ring and the other end being connected to the first metal segment furthest from it.
15. The ground shield structure of claim 1, wherein a plurality of said active regions are distributed in an array to form an array of active regions; the polysilicon grid bars extend along a first direction, and a plurality of polysilicon grid bars are arranged in an array along the first direction and a second direction;
the first metal segments extend along the second direction, and a plurality of the first metal segments are arranged in parallel along the first direction; wherein the first direction is one of a row direction and a column direction of the active area array, and the second direction is the other of the row direction and the column direction of the active area array.
16. A semiconductor device, comprising:
a ground shield structure as claimed in any one of claims 1 to 15;
and the induction element is positioned on the grounding shielding structure.
17. The semiconductor device of claim 16, wherein a projection of the sensing element onto the surface of the substrate is within a projection of the ground ring onto the surface of the substrate.
18. The semiconductor device of claim 16, wherein the inductor element is an inductance or a transformer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211227456.2A CN117878088A (en) | 2022-10-09 | 2022-10-09 | Ground shield structure and semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211227456.2A CN117878088A (en) | 2022-10-09 | 2022-10-09 | Ground shield structure and semiconductor device |
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| Publication Number | Publication Date |
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| CN117878088A true CN117878088A (en) | 2024-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211227456.2A Pending CN117878088A (en) | 2022-10-09 | 2022-10-09 | Ground shield structure and semiconductor device |
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| Country | Link |
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| CN (1) | CN117878088A (en) |
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2022
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