CN117913065A - Ground shield structure and semiconductor device - Google Patents
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- CN117913065A CN117913065A CN202211247198.4A CN202211247198A CN117913065A CN 117913065 A CN117913065 A CN 117913065A CN 202211247198 A CN202211247198 A CN 202211247198A CN 117913065 A CN117913065 A CN 117913065A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 230000006698 induction Effects 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims description 2
- 230000006872 improvement Effects 0.000 abstract description 10
- 238000007667 floating Methods 0.000 abstract description 7
- 230000008878 coupling Effects 0.000 description 16
- 238000010168 coupling process Methods 0.000 description 16
- 238000005859 coupling reaction Methods 0.000 description 16
- 230000005684 electric field Effects 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical class [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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Abstract
A ground shield structure and a semiconductor device, the ground shield structure comprising: a substrate; at least 1 shielding layer, the shielding layer is located on the substrate, the shielding layer includes: a first conductive structure and a second conductive structure, wherein the second conductive structure surrounds the first conductive structure in a plane parallel to the substrate surface and is electrically isolated from the first conductive structure; the grounding ring is positioned on the substrate, is parallel to the plane of the surface of the substrate and surrounds at least 1 shielding layer. Only the second conductive structure is grounded, the first conductive structure positioned in the center of the stronger induction magnetic field is not grounded, and the floating first conductive structure can effectively increase the resistance of the grounding shielding structure, effectively inhibit the substrate loss and facilitate the improvement of the quality factor Q value.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and in particular, to a ground shield structure and a semiconductor device.
Background
In existing integrated circuits, inductance is an important semiconductor device. Inductors are widely used in radio frequency circuits such as low noise amplifiers (Low Noise Amplifier, LNA) and Voltage Controlled Oscillators (VCO). The performance parameters of the inductor directly affect the performance of the integrated circuit.
The inductances in integrated circuits are mostly planar inductances, such as planar spiral inductances. Compared with the traditional wire-wound inductor, the planar inductor has the advantages of low cost, easy integration, low noise and low power consumption, and more importantly, the planar inductor is compatible with the existing integrated circuit technology.
An important indicator of how good the inductance is the quality factor Q. The higher the quality factor Q, the better the performance that represents the inductance. The definition of the inductance quality factor Q is: the ratio of the energy stored in the inductor to the energy lost per oscillation period.
But the quality factor of the existing inductor is often not ideal.
Disclosure of Invention
The invention solves the problem of how to further improve the quality factor of the inductor.
In order to solve the above problems, the present invention provides a ground shield structure, comprising:
A substrate; at least 1 shielding layer, the shielding layer being located on the substrate, the shielding layer comprising: a first conductive structure and a second conductive structure, wherein the second conductive structure surrounds the first conductive structure in a plane parallel to the substrate surface and the second conductive structure is electrically isolated from the first conductive structure; the grounding ring is positioned on the substrate and in a plane parallel to the surface of the substrate, and surrounds the at least 1 shielding layer.
Optionally, the first conductive structure includes a plurality of first conductive line segments, and any 2 of the first conductive line segments are electrically isolated.
Optionally, in a plane parallel to the substrate surface, the plurality of first conductive line segments enclose at least 1 first conductive loop.
Optionally, in a plane parallel to the surface of the substrate, the plurality of first conductive line segments enclose a plurality of first conductive rings, and the plurality of first conductive rings are concentrically arranged.
Optionally, the first conductive ring is a split ring.
Optionally, the number of openings of the first conductive ring is greater than 2.
Optionally, the second conductive structure includes: a plurality of second conductive line segments electrically connected to each other; in a plane parallel to the surface of the substrate, the plurality of second conductive line segments enclose at least 1 second conductive ring; the second conductive ring is arranged concentrically with the first conductive ring.
Optionally, at least 1 opening of the first conductive ring is a first opening; the second conductive ring is an open ring, and the opening of the second conductive ring corresponds to the first opening.
Optionally, the ground ring is electrically connected to the second conductive structure.
Optionally, the second conductive structure further includes: and the second connecting section is connected with the adjacent second conductive line segment.
Optionally, the grounding shielding structure is provided with a plurality of shielding layers, and the shielding layers are stacked along the direction vertical to the surface of the substrate; plugs are arranged between the second conductive structures of the adjacent shielding layers; the position of the plug corresponds to the position of the second connecting section.
Optionally, the grounding shielding structure is provided with a plurality of shielding layers, and the shielding layers are stacked along the direction vertical to the surface of the substrate; the first conductive structures of adjacent shield layers are electrically isolated.
Correspondingly, the invention also provides a semiconductor device, which comprises:
The grounding shielding structure is provided with a grounding shielding structure; and the induction element is positioned on the grounding shielding structure.
Optionally, the projection of the ground ring surrounds the projection of the sensing element at the surface of the substrate.
Optionally, the sensing element includes: and a coil, wherein a projection of the coil surrounds a projection of the first conductive structure on the surface of the substrate.
Optionally, the projection of the coil is located within the projection range of the second conductive structure.
Optionally, the inductor element is an inductance or a transformer.
Compared with the prior art, the technical scheme of the invention has the following advantages:
In the technical scheme of the invention, in the shielding layer, a second conductive structure connected with the grounding ring is electrically isolated from the first conductive structure, and the second conductive structure surrounds the first conductive structure. Only the second conductive structure is grounded, the first conductive structure positioned in the center of the stronger induction magnetic field is not grounded, and the floating first conductive structure can effectively increase the resistance of the grounding shielding structure, effectively inhibit the substrate loss and facilitate the improvement of the quality factor Q value.
In the alternative scheme of the invention, the first conducting rings are split rings, and the number of the split openings of the first conducting rings is larger than 2, namely, the first conducting rings positioned in the center are cut into more parts, and the length of each part is shorter, so that vortex can be effectively restrained, and the improvement of the quality factor Q value is facilitated.
Drawings
Fig. 1 is a schematic structural view of a semiconductor device;
FIG. 2 is a schematic diagram of the semiconductor device of FIG. 1 forming an induced magnetic field;
FIG. 3 is a schematic diagram of the semiconductor device of FIG. 1 forming a coupling electric field;
fig. 4 is a schematic top view of a semiconductor device;
FIG. 5 is a schematic top view of an embodiment of a ground shield structure of the present invention;
FIG. 6 is an enlarged schematic view of the structure within the dotted box 108 in the embodiment of the ground shield structure shown in FIG. 5;
FIG. 7 is a schematic cross-sectional view of the ground shield structure of the embodiment of FIG. 6 at a position along the dash-dot line A1A2 in the structure of the wire frame 108;
FIG. 8 is an enlarged schematic view of the structure in the dotted line frame 109 in the embodiment of the grounding shield structure shown in FIG. 5;
FIG. 9 is a schematic cross-sectional view of the structure of the grounding shield of FIG. 8 along the line B1B2 in the line frame 109;
fig. 10 is a schematic top view of an embodiment of a semiconductor device of the present invention;
FIG. 11 is a graph showing the variation of substrate capacitance at different frequencies for the semiconductor device embodiment of the present invention shown in FIG. 10;
Fig. 12 is a graph showing the variation of Q values of the quality factor at different frequencies for the embodiment of the semiconductor device of the present invention shown in fig. 10;
Fig. 13 is an enlarged view of data in a dashed box 301 in the case of a variation in Q value of a quality factor at different frequencies in the semiconductor device embodiment of the present invention shown in fig. 12.
Detailed Description
As known from the background art, the inductance in the prior art has the problem of too low Q value. An inductance structure is now combined to analyze the cause of the problem of too low Q of the quality factor:
referring to fig. 1, a schematic structure of a semiconductor device is shown.
The semiconductor device includes: a metal coil 11 located on a substrate (not shown).
When a signal passes through the closed metal coil 11, an induced magnetic field is formed in the middle of the metal coil 11; as shown in fig. 2, the induced magnetic field mag formed and eddy current ie is formed in the substrate, thereby generating substrate loss; as shown in fig. 3, a coupling electric field ef is formed between the metal coil 11 and the substrate to generate a displacement current, and thus a substrate loss is also generated.
The substrate loss affects the quality factor Q of the semiconductor device. As shown in fig. 1, one method of improving the quality factor Q is to provide a ground shield structure 12 under the metal coil 11, the ground shield structure 12 being connected to the ground terminal through a ground ring 13. The ground shielding structure 12 can shield the coupling electric field ef and form a substrate of high resistance, thereby achieving suppression of substrate loss.
Referring to fig. 4, a schematic structural diagram of a semiconductor device is shown.
In the semiconductor device, a ground shield structure 22 is provided below the metal coil 21, and in the ground shield structure 22, a plurality of concentrically arranged conductive rings 22 are arranged in an octagon shape to shield a coupling electric field below the metal coil 21.
But as shown in fig. 2 and 3, the induced magnetic field mag and the coupling electric field ef are distributed in different areas. Here, the induced magnetic field mag is concentrated in the central region of the coil 11, and the coupling electric field ef is concentrated directly under the coil 11.
Therefore, the conductive ring 22 directly under the metal coil 21 has a good shielding effect on the coupling electric field ef; but the larger magnetic field in the central region causes eddy currents in the conductive ring 22 in the central region, resulting in higher substrate losses and lower Q-factor.
In order to solve the technical problem, the invention provides a grounding shielding structure, comprising:
A substrate; at least 1 shielding layer, the shielding layer is located on the substrate, the shielding layer includes: a first conductive structure and a second conductive structure, wherein the second conductive structure surrounds the first conductive structure in a plane parallel to the substrate surface and is electrically isolated from the first conductive structure; the grounding ring is positioned on the substrate, is parallel to the plane of the surface of the substrate and surrounds at least 1 shielding layer.
According to the technical scheme, in the shielding layer, the second conductive structure connected with the grounding ring is electrically isolated from the first conductive structure, and the second conductive structure surrounds the first conductive structure. Only the second conductive structure is grounded, the first conductive structure positioned in the center of the stronger induction magnetic field is not grounded, and the floating first conductive structure can effectively increase the resistance of the grounding shielding structure, effectively inhibit the substrate loss and facilitate the improvement of the quality factor Q value.
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
Referring to fig. 5, a schematic top view of an embodiment of the grounding shield of the present invention is shown.
Referring to fig. 6 to 9 in combination, fig. 6 is an enlarged schematic view of the structure in the dotted line frame 108 in the embodiment of the ground shield structure shown in fig. 5; FIG. 7 is a schematic cross-sectional view of the ground shield structure of the embodiment of FIG. 6 at a position along the dash-dot line A1A2 in the structure of the wire frame 108; FIG. 8 is an enlarged schematic view of the structure in the dotted line frame 109 in the embodiment of the grounding shield structure shown in FIG. 5; fig. 9 is a schematic cross-sectional view of the structure of the grounding shield of fig. 8 at a position along the dash-dot line B1B2 in the inner structure of the wire frame 109.
The ground shield structure includes: a substrate (not shown); at least 1 shielding layer 101, the shielding layer 101 being located on the substrate, the shielding layer 101 comprising: a first conductive structure 110 and a second conductive structure 120, wherein the second conductive structure 120 surrounds the first conductive structure 110 in a plane parallel to the substrate surface, and the second conductive structure 120 is electrically isolated from the first conductive structure 110; the ground ring 130, the ground ring 130 is located on the substrate in a plane parallel to the substrate surface, the ground ring 130 surrounding at least 1 shielding layer 101.
In the shielding layer 101, the second conductive structure 120 connected to the ground ring 130 is electrically isolated from the first conductive structure 110, and wherein the second conductive structure 120 surrounds the first conductive structure 110. Only the second conductive structure 120 is grounded, the first conductive structure 110 positioned in the center of the stronger induction magnetic field is not grounded, and the floating first conductive structure 110 can effectively increase the resistance of the grounding shielding structure, effectively inhibit the substrate loss and facilitate the improvement of the quality factor Q value.
The following describes the technical scheme of the grounding shielding structure in detail with reference to the accompanying drawings.
The substrate is the process foundation and mechanical support for the subsequent structure.
In the semiconductor device, the ground shield structure is generally integrated with other semiconductor structures such as transistors on the same substrate, and thus the ground shield structure is formed in the same manufacturing process as the other semiconductor junctions such as transistors.
In some embodiments of the invention, the base comprises a substrate. The material of the substrate is monocrystalline silicon. In other embodiments of the present invention, the material of the substrate may also be selected from polysilicon or amorphous silicon; the material of the substrate may also be selected from other semiconductor materials such as germanium, gallium arsenide, or silicon germanium compounds. The substrate may also be provided with an epitaxial layer or a silicon-on-epitaxial structure.
It should be noted that the semiconductor structure integrated with the ground shield structure on the same substrate has an active region and polysilicon gate strips, and the active region is used to form an active device in other semiconductor structures. Thus, in some embodiments, the substrate further comprises: a plurality of active regions distributed within the substrate; the polysilicon gate strips are distributed on the active areas.
The polysilicon grid bars are used for forming a grid structure; the active area and the polysilicon gate strip in the substrate in the grounding shielding structure and the active area and the polysilicon gate strip in other semiconductor structures are formed in the same technological process; the active region and the polysilicon grid are formed in the substrate, so that the grounding shielding structure and other semiconductor structures on the substrate can be formed simultaneously, and the grounding shielding structure is compatible with the forming process of the other semiconductor structures.
The shielding layer 101 is located on the substrate and is used for shielding an induced magnetic field and a coupling electric field formed by the induction element arranged above, so that the induced magnetic field and the coupling electric field are terminated in the shielding layer 101, and the induced magnetic field and the coupling electric field are prevented from entering the substrate to inhibit substrate loss; the ground ring 130 has a ground point (not shown) thereon to improve connection to ground.
As shown in fig. 5, the second conductive structure 120 surrounds the first conductive structure 110, that is, in a plane parallel to the substrate surface, and the shielding layer 101 includes a central region (as shown in the dashed box in fig. 5) and a peripheral region, where the first conductive structure 110 is located, and where the second conductive structure 120 is located.
Because the strength of the induced magnetic field at the central position of the coil is larger, the area distributed by the first conductive structure 110 corresponds to the area with stronger induced magnetic field; and the coupling electric field is mainly concentrated under the coil, and the area where the second conductive structure 120 is distributed corresponds to the area of the stronger coupling electric field.
The first conductive structure 110 and the second conductive structure 120 are electrically isolated. When the induced magnetic field is generated, the first conductive structure 110 in a floating state can effectively inhibit the formation of eddy current, can reduce the substrate loss, and is beneficial to the improvement of the quality factor Q value.
In some embodiments of the present invention, the first conductive structure 110 includes a plurality of first conductive line segments 111, and any 2 first conductive line segments 111 are electrically isolated from each other. Specifically, as shown in fig. 5 to 9, any 2 were not contacted.
It should be noted that, the ground shielding structure further includes: a dielectric material; the first conductive structures 110 and the second conductive structures 120 are located within the dielectric material, i.e. between adjacent first conductive line segments 111 are filled with the dielectric material to achieve electrical isolation.
In some embodiments of the present invention, the plurality of first conductive line segments 111 enclose at least 1 first conductive loop in a plane parallel to the surface of the substrate. In the embodiment shown in fig. 5, the first conductive ring is an octagonal ring.
In the embodiment shown in fig. 5, in a plane parallel to the surface of the substrate, the plurality of first conductive segments 111 enclose a plurality of first conductive rings, and the plurality of first conductive rings are concentrically disposed.
In some embodiments of the invention, the first conductive ring is a split ring, that is, the first conductive ring has a split, and the first conductive ring is split at the position of the split. The first conducting ring is disconnected at the opening position, a closed loop is avoided from being formed in the first conducting ring, a current loop is avoided from being formed in the first conducting ring, eddy current is restrained, and substrate loss is reduced.
In some embodiments of the invention, the number of openings of the first conductive ring is greater than 2. In the embodiment shown in fig. 5, each first conductive ring has 8 openings, so that any first conductive ring is divided into 8 segments by the openings. The first conducting ring is cut into more parts, and the length of each part is shorter, so that eddy current can be effectively restrained, and improvement of the quality factor Q value is facilitated.
Specifically, each first conductive ring includes: 8 elongated first conductive line segments 111; each 2 adjacent first conductive line segments 111 in the 8 first conductive line segments 111 are connected, and 1 opening is formed between the connected 2 first conductive line segments 111; the included angle between the extending directions of the connected 2 first conductive line segments is 45 degrees.
At least 1 opening of the first conductive ring is a first opening 113, and the remaining openings are second openings 114. In the embodiment shown in fig. 5, 2 openings of the 8 openings of the first conductive ring are first openings, and the remaining 6 openings are second openings. Wherein the 2 first openings are respectively positioned at the positions of 1 diameter of the first conductive ring; the 6 second openings are respectively positioned at the positions of the other 3 diameters of the first conductive ring, and the included angles between the two adjacent diameters are 45 degrees.
In some embodiments of the present invention, the second conductive structure 120 is electrically connected to the ground ring 130, that is, the second conductive structure 120 is grounded, so as to shield the coupling electric field, prevent the coupling electric field from extending to the substrate, so as to inhibit the substrate loss and improve the Q value of the quality factor.
In some embodiments of the present invention, the second conductive structure 120 includes: the plurality of second conductive line segments 121, the plurality of second conductive line segments 121 are electrically connected to each other. As shown in fig. 5, in a plane parallel to the substrate surface, the plurality of second conductive line segments 121 enclose at least 1 second conductive loop. Specifically, the second conductive ring is disposed concentrically with the first conductive ring.
In some embodiments of the present invention, the second conductive ring is also a split ring, that is, the second conductive ring is disconnected at the opening, so as to avoid forming a closed loop in the second conductive ring, and avoid forming a current loop in the second conductive ring, so as to inhibit eddy current and reduce substrate loss.
Specifically, the opening of the second conductive ring corresponds to the first opening of the first conductive ring. As shown in fig. 5, the opening of the second conductive ring is collinear with the first opening. The second conductive ring and the first conductive ring each have a plurality of openings, and the plurality of first openings and the plurality of openings of the second conductive ring are all collinear.
In some embodiments of the present invention, the second conductive structure 120 further includes: the second connection section 122, the second connection section 122 connects adjacent second conductive line sections 121. In the embodiment shown in fig. 5, the second connection section 122 extends radially across all of the second conductive loops.
In the embodiment shown in fig. 5, the second conductive ring is also an octagonal ring. Each second conductive ring includes: 8 elongated second conductive line segments 121; wherein 4 second conductive line segments 121 are connected, and the remaining 4 second conductive line segments 121 are connected, so that the second conductive ring has 2 openings, and 8 second conductive line segments 121 respectively constitute 2 half rings. In a plane parallel to the substrate surface, the number of the second connection sections 122 is 2, and all the half rings on one side are respectively connected.
As shown in fig. 7 and 9, in some embodiments of the present invention, the ground shield structure has a plurality of shield layers 101, and the plurality of shield layers 101 are stacked in a direction perpendicular to the substrate surface; the first conductive structures 110 in adjacent shield layers 101 are electrically isolated.
Specifically, as shown in fig. 7 and 9, there is a gap between adjacent shielding layers 101, and adjacent shielding layers 101 are not in contact, i.e., there is a gap between first conductive structures 101 of adjacent shielding layers 101, and are not in contact.
Referring to fig. 5, 6 and 8 in combination, the ground shield structure also has a dielectric material, so that dielectric material is filled between adjacent shield layers 101, and so that dielectric material is filled between the first conductive structures 101 of adjacent shield layers 101.
As shown in fig. 7 and 9, when the ground shield structure has a plurality of shield layers 101, the second conductive structures 120 in adjacent shield layers 101 are electrically connected; there is a plug between the second conductive structures 120 of adjacent shield layers 101 as shown in fig. 9.
As shown in fig. 5 to 7, the second conductive structure 120 has a second connection section 122, and the position of the plug 102 corresponds to the position of the second connection section 122, that is, the projection of the plug 102 is located within the projection range of the second connection section 122 on the substrate surface.
As shown in fig. 8 and 9, the position of the plug 102 corresponds to the position of the second connection section 122 only, that is, only the plug 102 is provided between the second connection sections 122 of the adjacent shielding layers 101, no plug is provided between the second conductive line sections 121, and gaps are provided between the second conductive line sections 121 of the second conductive structures 122 in the adjacent shielding layers 101 to fill the dielectric material, so that the area of the conductive material in the grounding shielding structure is reduced as much as possible, and the resistance is increased and the substrate loss is suppressed.
It should be noted that, the semiconductor structure integrated with the ground shielding structure on the same substrate also has a metal interconnection structure, and the first conductive structure shielding layer 101 and the metal interconnection structure in other semiconductor structures are formed in the same process to ensure process uniformity and yield.
Referring to fig. 10, a schematic top view of an embodiment of the semiconductor device of the present invention is shown.
The semiconductor device includes: a ground shield structure 201, the ground shield structure 201 being a ground shield structure of the present invention; a sensing element located on the ground shield structure 201.
The ground shield structure 201 serves to suppress substrate loss.
Specifically, the ground shield structure 201 is the ground shield structure of the present invention. The specific technical solution of the grounding shielding structure 201 refers to the foregoing embodiments of the grounding shielding structure, and the disclosure is not repeated herein.
The induction element is located on the grounding shielding structure 201, and the grounding shielding structure 201 can effectively inhibit displacement current formed by coupling electric field formed between the induction element and the substrate, and can also shield magnetic field formed by the induction element to inhibit eddy current formed in the substrate.
In some embodiments of the invention, the projection of the sensing element onto the surface of the substrate is within the projection of the ground ring onto the surface of the substrate. Specifically, the inductive element is a transformer or an inductor.
In some embodiments of the invention, the inductive element comprises: a coil 202, wherein a projection of the coil 202 surrounds a projection of the first conductive structure on the substrate surface, that is, a region surrounded by the projection of the coil 202 is the central region, and the first conductive structure is located in the central region. The induction magnetic field intensity of the central area is larger, the first conductive structure which is electrically isolated from the second conductive structure is electrically isolated from the ground, the floating of the first conductive structure can effectively inhibit the formation of eddy current, the reduction of substrate loss is facilitated, and the improvement of the quality factor Q value is facilitated.
Furthermore, in some embodiments of the present invention, the projection of the coil 202 is located within the projection range of the second conductive structure, and the conductive ring surrounds the shielding layer, the area between the central area and the conductive ring is the peripheral area, the second conductive structure is located in the peripheral area, and the coil 202 is located above the peripheral area. The second conductive structure connected with the ground end through the ground ring can effectively shield the coupling electric field, thereby being beneficial to reducing the substrate loss and improving the quality factor Q value.
Specifically, as shown in fig. 10, the number of turns of the coil 202 is 1, the radius R of the coil 202 is 30 micrometers, and the width W of the coil 202 is 10 micrometers.
Referring to fig. 11-13, performance parameter test values at different frequencies for the semiconductor device embodiment of the present invention shown in fig. 10 are shown. FIG. 11 is a graph showing the variation of substrate capacitance at different frequencies for the semiconductor device embodiment of the present invention shown in FIG. 10; fig. 12 and 13 are views showing the variation of Q value of the quality factor at different frequencies in the embodiment of the semiconductor device of the present invention shown in fig. 10, and fig. 13 is an enlarged view of data in a broken line frame 301 in fig. 12.
It should be noted that, fig. 11 to 13 also show the performance parameter test values of the semiconductor device shown in fig. 4 at different frequencies; among them, 2 semiconductor devices shown in fig. 11 to 13 have sensing devices of the same structure.
In fig. 11, the horizontal axis represents the input signal frequency in 10 9 Hz; the vertical axis represents the capacitance value of the substrate in fF; wherein solid line 209 represents the substrate capacitance as a function of input signal frequency for the semiconductor device embodiment of the present invention shown in fig. 10; the solid line 109 shows the variation of the substrate capacitance value of the semiconductor device shown in fig. 4 with the frequency of the input signal.
As can be seen from fig. 11, the semiconductor device embodiment of the present invention shown in fig. 10 has a higher substrate capacitance value than the semiconductor device shown in fig. 4.
In fig. 12 and 13, the horizontal axis represents the input signal frequency in 10 9 Hz; the vertical axis represents the Q value of the quality factor of the substrate, with the unit being 1; wherein solid line 208 represents the variation of the Q value of the quality factor with the frequency of the input signal for the embodiment of the semiconductor device of the present invention shown in fig. 10; the solid line 108 shows the variation of the Q value of the quality factor of the semiconductor device shown in fig. 4 with the frequency of the input signal.
As can be seen from fig. 12 and 13, the semiconductor device embodiment of the present invention shown in fig. 10 has a higher Q-value of the quality factor than the semiconductor device shown in fig. 4. The quality factor Q values of 2 semiconductor devices differ by a maximum of 3.2%.
In summary, in the shielding layer, the second conductive structure connected to the ground ring is electrically isolated from the first conductive structure, and the second conductive structure surrounds the first conductive structure. Only the second conductive structure is grounded, the first conductive structure positioned in the center of the stronger induction magnetic field is not grounded, and the floating first conductive structure can effectively increase the resistance of the grounding shielding structure, effectively inhibit the substrate loss and facilitate the improvement of the quality factor Q value. In addition, the first conducting ring is an open ring, and the number of openings of the first conducting ring is larger than 2, so that the first conducting ring positioned in the center is cut into more parts, the length of each part is shorter, eddy current can be effectively restrained, and improvement of the quality factor Q value is facilitated.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (17)
1. A ground shield structure, comprising:
A substrate;
At least 1 shielding layer, the shielding layer being located on the substrate, the shielding layer comprising: a first conductive structure and a second conductive structure, wherein the second conductive structure surrounds the first conductive structure in a plane parallel to the substrate surface and the second conductive structure is electrically isolated from the first conductive structure;
the grounding ring is positioned on the substrate and in a plane parallel to the surface of the substrate, and surrounds the at least 1 shielding layer.
2. The ground shield structure of claim 1, wherein said first conductive structure comprises a plurality of first conductive line segments, electrical isolation between any 2 of said first conductive line segments.
3. The ground shield structure of claim 2, wherein the plurality of first conductive segments enclose at least 1 first conductive loop in a plane parallel to the substrate surface.
4. The ground shield of claim 3, wherein the plurality of first conductive segments define a plurality of first conductive loops in a plane parallel to the substrate surface, the plurality of first conductive loops being concentrically disposed.
5. The ground shield structure of claim 3, wherein the first conductive ring is a split ring.
6. The ground shield structure of claim 5, wherein the number of openings of the first conductive ring is greater than 2.
7. The ground shield structure of claim 5, wherein the second conductive structure comprises: a plurality of second conductive line segments electrically connected to each other; in a plane parallel to the surface of the substrate, the plurality of second conductive line segments enclose at least 1 second conductive ring;
The second conductive ring is arranged concentrically with the first conductive ring.
8. The ground shield structure of claim 7, wherein at least 1 opening of the first conductive ring is a first opening;
The second conductive ring is an open ring, and the opening of the second conductive ring corresponds to the first opening.
9. The ground shield structure of claim 1, wherein the ground ring is electrically connected to the second conductive structure.
10. The ground shield structure of claim 9, wherein the second conductive structure further comprises: and the second connecting section is connected with the adjacent second conductive line segment.
11. The ground shield structure of claim 10, wherein the ground shield structure has a plurality of the shield layers, the plurality of shield layers being stacked in a direction perpendicular to the substrate surface;
plugs are arranged between the second conductive structures of the adjacent shielding layers;
The position of the plug corresponds to the position of the second connecting section.
12. The ground shield structure of claim 1, wherein the ground shield structure has a plurality of the shield layers, the plurality of shield layers being stacked in a direction perpendicular to the substrate surface; the first conductive structures of adjacent shield layers are electrically isolated.
13. A semiconductor device, comprising:
a ground shield structure as claimed in any one of claims 1 to 12;
And the induction element is positioned on the grounding shielding structure.
14. The semiconductor device of claim 13, wherein a projection of the ground ring surrounds a projection of the sensing element at the substrate surface.
15. The semiconductor device according to claim 13, wherein the sensing element comprises: and a coil, wherein a projection of the coil surrounds a projection of the first conductive structure on the surface of the substrate.
16. The semiconductor device of claim 15, wherein a projection of the coil is within a projection range of the second conductive structure.
17. The semiconductor device of claim 13, wherein the inductor element is an inductance or a transformer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211247198.4A CN117913065A (en) | 2022-10-12 | 2022-10-12 | Ground shield structure and semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211247198.4A CN117913065A (en) | 2022-10-12 | 2022-10-12 | Ground shield structure and semiconductor device |
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| Publication Number | Publication Date |
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| CN117913065A true CN117913065A (en) | 2024-04-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211247198.4A Pending CN117913065A (en) | 2022-10-12 | 2022-10-12 | Ground shield structure and semiconductor device |
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| CN (1) | CN117913065A (en) |
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