CN117845178A - Magnetron sputtering planar target insulation structure - Google Patents
Magnetron sputtering planar target insulation structure Download PDFInfo
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- CN117845178A CN117845178A CN202410219036.2A CN202410219036A CN117845178A CN 117845178 A CN117845178 A CN 117845178A CN 202410219036 A CN202410219036 A CN 202410219036A CN 117845178 A CN117845178 A CN 117845178A
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- magnetic field
- field module
- plate
- magnetron sputtering
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- 238000009413 insulation Methods 0.000 title claims abstract description 59
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 37
- 230000001965 increasing effect Effects 0.000 claims abstract description 14
- 125000006850 spacer group Chemical group 0.000 claims description 82
- 238000007789 sealing Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 238000000151 deposition Methods 0.000 abstract description 8
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- 230000008569 process Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
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- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
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- 239000007789 gas Substances 0.000 description 1
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- 238000011900 installation process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
The invention discloses a magnetron sputtering planar target insulation structure which comprises a magnetic field module, a fixed bottom plate and an insulation plate arranged between the magnetic field module and the fixed bottom plate, wherein one end of the magnetic field module, which is close to the insulation plate, is concaved inwards to form a step so as to reduce the deposition of metal atoms on the insulation plate and increase the conduction length between the magnetic field module and the fixed bottom plate. According to the invention, the step is arranged on the outer ring of the magnetic field module, the step plays a role in shielding the insulating plate, the right-angle side of the insulating plate right below the step is not easy to be stuck with metal atoms, the deposition of the metal atoms on the insulating plate can be reduced, the conduction length between the magnetic field module and the fixed bottom plate can be increased by the step, and the right-angle side of the insulating plate is not easy to be stuck with the metal atoms, so that the creepage probability is reduced, and the insulating effect is further enhanced.
Description
Technical Field
The invention relates to the technical field of magnetron sputtering, in particular to a magnetron sputtering planar target insulation structure.
Background
Magnetron sputtering is a Physical Vapor Deposition (PVD) technique that forms thin films by sputtering material from a target onto a substrate by high-speed ion bombardment. The magnetron sputtering has the advantages of simple equipment, easy control, large coating area, strong adhesive force and the like, and is widely applied in a plurality of fields. In magnetron sputtering, electrons collide with argon atoms in the process of flying to a substrate under the action of an electric field, so that a large amount of argon ions and electrons are generated by ionization of the electrons. The new electrons fly to the substrate, while the argon ions fly to the cathode target in an accelerating way under the action of an electric field, and bombard the surface of the target with high energy, so that the target is sputtered. The magnetron sputtering has high film forming rate, low substrate temperature and good film adhesion, and can realize large-area film coating. Meanwhile, magnetron sputtering performs high-speed sputtering under low air pressure, and the ionization rate of the gas must be effectively improved. Therefore, a magnetic field is introduced at the target cathode surface, and the confinement of the charged particles by the magnetic field is used to increase the plasma density to increase the sputtering rate. The magnetron sputtering has wide application, can be used for preparing multiple materials such as metal, semiconductor, insulator and the like, and can also be applied to research in the fields of high-temperature superconducting films, ferroelectric films, giant magnetoresistance films, film luminescent materials, solar cells, memory alloy films and the like.
The magnetron sputtering has the characteristics of simple operation, easy accurate control of technological parameters, good film forming quality and the like, becomes one of the most important film forming methods in modern times, is applied to surface film forming of various materials such as metal, semiconductor, insulator and the like, and has the advantages of easy control of film forming thickness, large film forming area, strong adhesive force and the like. Magnetron sputtering increases the sputtering rate by introducing a magnetic field at the target cathode surface, and increasing the plasma density by confining the charged particles by the magnetic field.
In magnetron sputtering equipment, the housing is typically connected to power ground, while the electrode module is connected to the metal target of the cathode. The electrode module and the magnetic field module are connected with each other to form a complete magnetron sputtering system. In the magnetron sputtering process of the metal target, incident ions (Ar+) bombard the target under the action of an electric field, so that neutral atoms or molecules on the surface of the metal target obtain enough kinetic energy to separate from the surface of the metal target, and deposit on the surface of a substrate to form a film. Metal atoms on the surface of the metal target are also deposited on the insulating plate between the housing and the magnetic field module.
As the magnetron sputtering process proceeds, the deposited metal atoms on the insulating plate gradually increase, the insulating property of the insulating plate decreases, and current flows from the electrode module to the power ground, causing a short circuit. Once short circuit occurs, the power supply cannot be normally supplied to the target, so that the magnetron sputtering process is stopped, and the equipment cannot work normally.
Disclosure of Invention
In order to solve the problems that in the existing magnetron sputtering process, metal atoms deposited on an insulating plate are increased, the insulating performance is reduced, and the electrode module is conducted with the power ground to cause short circuit, so that equipment cannot work normally, the invention provides the magnetron sputtering planar target insulating structure.
The technical scheme of the invention is as follows:
the utility model provides a magnetron sputtering plane target insulation structure, includes magnetic field module, PMKD and locates the magnetic field module with insulating board between the PMKD, the magnetic field module is close to the one end indent formation step of insulating board is in order to reduce metal atom's deposit on the insulating board increases the magnetic field module with switch on length between the PMKD.
According to the invention of the scheme, the side face of the magnetic field module is flush with the side face of the insulating plate, and the side face of the fixed bottom plate protrudes out of the side face of the insulating plate.
According to the invention, the fixed bottom plate is provided with a plurality of fixed positions, the fixed bottom plate is connected with the magnetic field module and the insulating plate through screws at the fixed positions, and the fixed positions are provided with insulating spacers.
According to the invention, the head of the insulating spacer is in a conical structure, and the head of the insulating spacer extends on the insulating plate, so that a sealing area is formed between the insulating spacer and the insulating plate after the screw is locked.
According to the invention of the scheme, a gap is reserved between the head of the insulating spacer bush and the magnetic field module.
According to the invention of the scheme, the apertures of the magnetic field module, the insulating plate and the fixed bottom plate at the fixed position of the fixed bottom plate are gradually increased so as to increase the conduction length between the magnetic field module and the fixed bottom plate.
According to the invention of the scheme, one end of the insulating plate, which is close to the magnetic field module, is outwards recessed at the fixing position to form a groove.
According to the invention, the insulation spacer is in a three-section shape of the head part, the middle part and the tail part, the outer diameter of the insulation spacer from the head part to the tail part is gradually increased, the head part of the insulation spacer is arranged in the insulation plate, the middle part and the tail part of the insulation spacer are arranged in the fixed bottom plate, and the fixed bottom plate is outwards recessed at the fixed position to form a placing groove for placing the tail part of the insulation spacer.
According to the invention, the end of the head part of the insulating spacer bush, which is close to the fixed bottom plate, is inwards recessed to form a buffer groove.
According to the invention, the insulating spacer is of a hollow structure and is in threaded connection with the magnetic field module after the screw passes through the insulating spacer.
The invention according to the scheme has the following beneficial effects:
1. according to the invention, the step is arranged on the outer ring of the magnetic field module, the step plays a role in shielding the insulating plate, the right-angle side of the insulating plate right below the step is not easy to be stuck with metal atoms, the deposition of the metal atoms on the insulating plate can be reduced, the length of the insulating plate between the magnetic field module and the fixed bottom plate can be increased by arranging the step, namely the conduction length of the magnetic field module and the fixed bottom plate is increased, and the right-angle side of the insulating plate is not easy to be stuck with the metal atoms, so that the creepage probability is reduced, and the insulating effect is further enhanced.
2. The head of the insulating spacer is designed into a conical structure, after the screw is locked, the head of the insulating spacer is tightly attached to the side wall of the insulating plate, a sealing area is formed between the head of the insulating spacer and the insulating plate, metal atoms are not easy to deposit at the sealing area formed by the head of the insulating spacer and the insulating plate, and the sealing area is equivalent to a safety area which is not easy to pass through the metal atoms and is arranged on the insulating plate, so that the conduction of the magnetic field module and the fixed bottom plate at the fixed position is avoided, and the creepage phenomenon can be effectively prevented.
3. The head of the insulating spacer bush is inwards recessed at one end close to the fixed bottom plate to form a buffer groove, and a certain deformation space is reserved for the conical head of the insulating spacer bush by the buffer groove, so that the head of the insulating spacer bush is prevented from deforming and extruding to the middle part of the insulating spacer bush, the middle part of the insulating spacer bush is ensured to be always in close contact with the insulating plate, and metal atoms are prevented from being deposited on the insulating plate due to the generation of gaps.
4. The head of the insulating spacer bush is spaced from the magnetic field module, the space is reserved for metal atoms deposited on the insulating plate, the metal atoms can be deposited in the reserved space and are not adhered to the surface of the insulating plate, and the deposition of the metal atoms on the insulating plate can be obviously reduced by optimizing the design of the space between the insulating spacer bush and the magnetic field module, so that the magnetic field module and the fixed bottom plate are prevented from being conducted at a fixed position, and the creepage phenomenon is effectively prevented.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a side view of the present invention;
fig. 3 is a cross-sectional view of the present invention.
In the drawings, the respective reference numerals are as follows:
1. a magnetic field module; 11. a step; 12. a threaded hole; 2. an insulating plate; 21. a groove; 3. a fixed bottom plate; 31. a placement groove; 4. a screw; 5. an insulating spacer; 51. a buffer tank; 6. dust-proof sheet.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments.
It should be noted that the terms "comprising" and "having" and any variations thereof in the description and claims of the present invention are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus. The term "disposed" and like terms are to be broadly interpreted, and may be fixedly connected, detachably connected, or integrally formed, for example; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The directions or positions indicated by the terms "upper", "lower", "left", "right", "front", "rear", "bottom", etc. are directions or positions based on those shown in the drawings, and are merely for convenience of description, and are not to be construed as limiting the present technical solution.
As shown in fig. 1-3, in this embodiment, in the magnetron sputtering planar target insulation structure, by arranging the step 11 on the outer ring of the magnetic field module 1, the step 11 plays a role in shielding the insulation board 2, the right-angle edge of the insulation board 2 right below the step 11 is not easy to adhere to metal atoms, so that the deposition of the metal atoms on the insulation board 2 can be reduced, and the length of the insulation board 2 between the magnetic field module 1 and the fixed bottom board 3 can be increased by arranging the step 11, namely, the conduction length of the magnetic field module 1 and the fixed bottom board 3 is increased, thereby reducing the creepage probability and further enhancing the insulation effect.
Specifically, the magnetic field module comprises a magnetic field module 1, a fixed bottom plate 3 and an insulating plate 2 arranged between the magnetic field module 1 and the fixed bottom plate 3, wherein one end, close to the insulating plate 2, of the magnetic field module 1 is concaved inwards to form a step 11 so as to reduce the deposition of metal atoms on the insulating plate 2 and increase the conduction length between the magnetic field module 1 and the fixed bottom plate 3.
In a specific embodiment, the side of the magnetic field module 1 is flush with the side of the insulating plate 2, and the side of the fixing base plate 3 protrudes from the side of the insulating plate 2. The side of the fixed bottom plate 3 protrudes out of the side of the insulating plate 2 to contact with the housing to connect to the power ground, ensuring stable transmission of power and providing good grounding protection for the device. The magnetic field module 1 and the insulating plate 2 are separated from the shell by a certain distance, so that the problem of short circuit between the power ground and the magnetic field module 1 and the insulating plate 2 can be prevented, and the insulating performance and the stability of the equipment are further enhanced. In other embodiments, the sides of the magnetic field module 1 protrude from the sides of the insulating plate 2, but the protruding length is smaller than the protruding length of the fixing base plate 3. The arrangement has better shielding effect on the insulating plate 2, can further reduce the deposition of metal atoms on the insulating plate 2 and enhance the insulating effect of the insulating plate 2.
In a specific embodiment, the fixed bottom plate 3 is provided with a plurality of fixed positions, the fixed bottom plate 3 is connected with the magnetic field module 1 and the insulating plate 2 at the fixed positions through screws 4, and the fixed bottom plate is firm and reliable in a connection mode through the screws 4 and can bear vibration and impact in the sputtering process. The fixed position is provided with an insulating spacer bush 5, and the insulating spacer bush 5 is of a hollow structure and is in threaded connection with the magnetic field module 1 after a screw 4 passes through. The use of the insulating spacer bush 5 avoids the creepage phenomenon of the fixed bottom plate 3 and the magnetic field module 1 at the fixed position, thereby effectively preventing the occurrence of short circuit.
The head of the insulating spacer bush 5 is in a conical structure, and the head of the insulating spacer bush 5 extends on the insulating plate 2. So that after the screw 4 is locked, the head of the insulating spacer bush 5 is tightly attached to the side wall of the insulating plate 2, and a sealing area is formed between the head of the insulating spacer bush 5 and the insulating plate 2. The design of the sealing area ensures that metal atoms are not easy to deposit to the sealing area formed by the head part of the insulating spacer bush 5 and the insulating plate 2, which is equivalent to a safety area which is not easy to pass through by arranging a metal atom on the insulating plate 2, thereby avoiding the conduction of the magnetic field module 1 and the fixed bottom plate 3 at the fixed position and effectively preventing the creepage phenomenon.
The head of the insulating spacer bush 5 is designed into a conical structure, so that the close contact area with the insulating plate 2 is increased by the conical design, and the stability and the accuracy of the insulating spacer bush 5 in the installation process are ensured.
Preferably, the end of the head of the insulating spacer 5 near the fixed bottom plate 3 is recessed inward to form a buffer slot 51. The purpose of the arrangement is to reserve a certain deformation space for the conical head of the insulating spacer 5. When the head of the insulating spacer 5 is extruded with the inner side wall of the insulating plate 2, the edge of the head of the insulating spacer 5 is inclined towards the bottom, the edge of the bottom end of the head of the insulating spacer 5 is lowest, the deformed edge of the bottom end of the head of the insulating spacer 5 can be placed at the buffer groove 51, the head of the insulating spacer 5 is prevented from being deformed and extruded to the middle of the insulating spacer 5, and gaps are generated between the middle of the insulating spacer 5 and the insulating plate 2, so that metal atoms are deposited on the insulating plate 2.
The design of the buffer groove 51 can effectively prevent the insulating spacer 5 from deforming when being extruded, ensure that the middle part of the insulating spacer 5 is always in close contact with the insulating plate 2, and prevent metal atoms from depositing on the insulating plate 2 due to the generation of gaps.
Preferably, a certain interval is kept between the head of the insulating spacer 5 and the magnetic field module 1, that is, a certain interval is kept between the top end of the insulating spacer 5 and the magnetic field module 1, and the interval is a reserved space for metal atoms deposited on the insulating plate 2, and the metal atoms can be deposited in the reserved space and are not attached to the surface of the insulating plate 2. Through optimizing the interval design between insulating spacer 5 and the magnetic field module 1, can show the deposit that reduces the metal atom on insulation board 2 to avoid magnetic field module 1 and fixed baseplate 3 to switch on in fixed position department, prevent the emergence of creepage phenomenon effectively.
In a specific embodiment, the apertures of the magnetic field module 1, the insulating plate 2 and the fixing base plate 3 at the fixing position of the fixing base plate 3 are gradually increased to increase the length of the insulating plate 2 between the magnetic field module 1 and the fixing base plate 3 at the fixing position, so as to increase the conducting length of the magnetic field module 1 and the fixing base plate 3, thereby reducing the creepage probability and further enhancing the overall insulation effect. The trompil of magnetic field module 1 is screw hole 12, makes it can carry out inseparable threaded connection with the screw 4 screw thread, ensures stability and the reliability of structure. The opening on the insulating plate 2 is a through hole, and the head of the insulating spacer bush 5 extends into the opening of the insulating plate 2. The opening on the fixed bottom plate 3 is a through hole for placing the insulating spacer bush 5, the head of the screw 4 is placed on the insulating spacer bush 5 in the fixed bottom plate 3, and the tail of the screw 4 passes through the inside of the insulating spacer bush 5 and is connected with the threaded hole 12 on the magnetic field module 1.
In order to further enhance the insulation effect at the fixing position of the fixing base plate 3, one end of the insulation plate 2, which is close to the magnetic field module 1, is outwards recessed at the fixing position to form a groove 21, and the function of the groove 21 is to increase the length of the insulation plate 2 between the magnetic field module 1 and the fixing base plate 3 at the fixing position so as to increase the conduction length of the magnetic field module 1 and the fixing base plate 3, thereby reducing the creepage probability and further enhancing the insulation effect.
In a specific embodiment, the insulating spacer 5 is in three sections of a head section, a middle section and a tail section, and the sectional design increases the stability of the insulating spacer 5. The outer diameter of the insulating spacer 5 increases gradually from the head to the tail to accommodate the increased aperture at the fixing location. Specifically, the head of the insulating spacer 5 is placed in the insulating plate 2, and the middle and tail of the insulating spacer 5 are placed in the fixed bottom plate 3. In order to ensure the stability of the installation of the insulating spacer 5 at the fixing position, the fixing bottom plate 3 is outwards recessed at the fixing position to form a placing groove 31 for placing the tail part of the insulating spacer 5, so that the insulating spacer 5 is firmly fixed in the placing groove 31 and is not easy to move.
The outer diameter of the insulating spacer bush 5 is matched with the diameters of the insulating plate 2 and the holes on the fixed bottom plate 3, and the tail part of the insulating spacer bush 5 is placed in the placing groove 31 of the fixed bottom plate 3 to form a first blocking, so that the insulating spacer bush is prevented from being completely separated. The middle part of the insulating spacer bush 5 is abutted with the bottom end of the insulating plate 2 to form secondary blocking, so that the fixing effect of the insulating spacer bush 5 is further enhanced, and the insulating spacer bush 5 is prevented from moving at the fixing position of the fixed bottom plate 3.
The design and the fixing mode of the insulating spacer 5 obviously improve the stability and the reliability of the whole magnetron sputtering planar target. The device can effectively prevent the occurrence of short circuit and improve the insulation performance of equipment.
Preferably, the bottom end of the insulating spacer 5 is provided with a dust-proof sheet 6 to prevent metal atoms from entering the insulating spacer 5.
It will be understood that modifications and variations will be apparent to those skilled in the art from the foregoing description, and it is intended that all such modifications and variations be included within the scope of the following claims.
While the invention has been described above with reference to the accompanying drawings, it will be apparent that the implementation of the invention is not limited by the above manner, and it is within the scope of the invention to apply the inventive concept and technical solution to other situations as long as various improvements made by the inventive concept and technical solution are adopted, or without any improvement.
Claims (10)
1. The utility model provides a magnetron sputtering plane target insulation structure which characterized in that, includes magnetic field module, PMKD and locates the magnetic field module with the insulation board between the PMKD, the magnetic field module is close to the one end indent formation step of insulation board to reduce metal atom's deposit on the insulation board increases the magnetic field module with switch-on length between the PMKD.
2. The magnetron sputtering planar target insulation structure according to claim 1, wherein the side surface of the magnetic field module is flush with the side surface of the insulation board, and the side surface of the fixing base plate protrudes out of the side surface of the insulation board.
3. The magnetron sputtering planar target insulation structure according to claim 1, wherein the fixed bottom plate is provided with a plurality of fixed positions, the fixed bottom plate is connected with the magnetic field module and the insulation plate through screws at the fixed positions, and the fixed positions are provided with insulation spacers.
4. A magnetron sputtering planar target insulation structure according to claim 3, wherein the head of the insulation spacer is in a conical structure, and the head of the insulation spacer extends on the insulation plate, so that a sealing area is formed between the insulation spacer and the insulation plate after the screw is locked.
5. A magnetron sputtering planar target insulation structure according to claim 3 or 4 wherein there is a space between the head of the insulating spacer and the magnetic field module.
6. The magnetron sputtering planar target insulation structure according to claim 5, wherein the aperture of the magnetic field module, the insulation plate and the fixing base plate at the fixing position of the fixing base plate is gradually increased to increase the conduction length between the magnetic field module and the fixing base plate.
7. The magnetron sputtering planar target insulation structure according to claim 6, wherein an end of the insulation board near the magnetic field module is recessed outward at the fixing position to form a groove.
8. The magnetron sputtering planar target insulation structure according to claim 6 or 7, wherein the head of the insulation spacer is recessed inwards to form a buffer groove near one end of the fixed bottom plate.
9. The magnetron sputtering planar target insulation structure according to claim 4, wherein the insulation spacer is in a three-section shape of a head part, a middle part and a tail part, the outer diameter of the insulation spacer from the head part to the tail part is gradually increased, the head part of the insulation spacer is arranged in the insulation plate, the middle part and the tail part of the insulation spacer are arranged in the fixed bottom plate, and the fixed bottom plate is outwards recessed at the fixed position to form a placing groove for placing the tail part of the insulation spacer.
10. The magnetron sputtering planar target insulation structure according to claim 3 or 9, wherein the insulation spacer is of a hollow structure and is in threaded connection with the magnetic field module after the screw passes through.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410219036.2A CN117845178A (en) | 2024-02-28 | 2024-02-28 | Magnetron sputtering planar target insulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410219036.2A CN117845178A (en) | 2024-02-28 | 2024-02-28 | Magnetron sputtering planar target insulation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117845178A true CN117845178A (en) | 2024-04-09 |
Family
ID=90536510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410219036.2A Pending CN117845178A (en) | 2024-02-28 | 2024-02-28 | Magnetron sputtering planar target insulation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117845178A (en) |
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2024
- 2024-02-28 CN CN202410219036.2A patent/CN117845178A/en active Pending
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