CN113611586A - ECR ion source device - Google Patents
ECR ion source device Download PDFInfo
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- CN113611586A CN113611586A CN202110896433.XA CN202110896433A CN113611586A CN 113611586 A CN113611586 A CN 113611586A CN 202110896433 A CN202110896433 A CN 202110896433A CN 113611586 A CN113611586 A CN 113611586A
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- circular waveguide
- waveguide tube
- grid
- electrode
- ion source
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- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 230000005611 electricity Effects 0.000 claims abstract description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005415 magnetization Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 24
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The ECR ion source device comprises a circular waveguide tube, an arc starting cavity and a microwave feed-in window, wherein the microwave feed-in window is positioned between the circular waveguide tube and the arc starting cavity; the circular waveguide tube is connected with the arc striking cavity through the microwave feed-in window, and the other end of the circular waveguide tube is provided with an antenna; a magnet group is arranged in the arc starting cavity, a three-grid electrode is arranged at one end of the magnet group, the arc starting cavity is connected with a vacuum flange, and the vacuum flange is used for isolating vacuum and fixing an electrode of the three-grid electrode; a ceramic cavity is arranged outside the arcing cavity and used for fixing and insulating the electrode; three electrodes of the three pole pieces of the three grids respectively penetrate through the flange and extend out of the vacuum to be connected with high voltage electricity; the circular waveguide tube is externally connected with a microwave source, the microwave is transmitted into the circular waveguide tube through a coaxial cable, and the coaxial cable extends into the antenna and enters the circular waveguide tube. The invention has the characteristics of small volume, compact structure and the like, can continuously work, can stably provide ions under lower air pressure, has high compatibility with gas, and provides ions with high cleanliness and high energy.
Description
Technical Field
The invention relates to the technical field of microwave plasma, in particular to an ECR ion source device.
Background
An ion source is a device that ionizes neutral atoms, molecules, or clusters of atoms and extracts an ion beam therefrom. With the development of semiconductor devices, ion etching technology has become an important process in microelectronic processes, wherein etching is a process of selectively removing unwanted materials from the surface of a silicon wafer by chemical or physical methods, and ion beam etching is a technology for achieving the purpose of etching by means of ion beam etching, and the resolution is limited by the path range of particles entering a substrate and the ion energy depletion process. Ion sources used in ion beam etching techniques require cleanliness and energy stability.
The ECR ion source is a non-cathode source, has the characteristics of high ionization degree, large beam intensity, low air pressure, stable performance and the like, is a high-density low-air-pressure plasma source, can generate large-area uniform high-density plasma under lower air pressure, and ions in the plasma are restrained, extracted and accelerated to form ion beams to etch a substrate material. The ECR ion sources used at present are large in size and cannot meet the requirements of laboratories. How to improve the ion beam current density, namely the particle energy under the same power is a constantly pursued goal of researchers to provide a device satisfying experimental conditions for ion etching.
Disclosure of Invention
The invention provides an ECR ion source device, which can solve the technical problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
an ECR ion source device comprises a circular waveguide tube, a microwave feed-in window, a magnet group, a microwave source and a microwave source, wherein the circular waveguide tube is connected with an arc starting cavity through the microwave feed-in window;
a magnet group is arranged in the arc starting cavity, and one end of the magnet group is provided with a tri-grid;
the arc starting cavity is connected with a vacuum flange, and the vacuum flange is used for isolating vacuum and fixing an electrode of the three-grid.
The arc starting cavity is provided with a circle of fine and dense small holes at the variable cross section position so as to enable ionized gas to uniformly enter the arc starting cavity.
Furthermore, the magnet is of an annular structure, and the magnetizing direction is the thickness direction.
Furthermore, one end of the circular waveguide tube is closed, and a small hole is formed in the middle of the circular waveguide tube and used for installing an antenna.
Furthermore, the antenna is an electric conductor with a circular section and bent into a right angle.
Furthermore, the three-grid is a group of small and thin circular groups which are symmetrically distributed in the middle of the circular thin sheet, and the positions of the circular hole groups of each grid are consistent.
Furthermore, the distance of each grid of the three grids is different so as to meet the requirements of different voltage-resistant grades, and the grids are respectively provided with an electric lug.
Further, the vacuum flange is a standard CF flange of a vacuum electrode and is provided with an air inlet. When the electrode on the vacuum flange is connected with the three grids, the electrode is connected with the three grids through the elastic wave plate.
Further, the microwave feed window microwave is a quartz window that is sealed and kept in vacuum.
According to the technical scheme, the ECR ion source device can be made into a standard product and installed on different vacuum chambers, high-density ions can be obtained in a low-power state, and the particle energy provided by the same power is high.
The ECR ion source device provided by the invention adopts the permanent magnet to provide the magnetic field, so that a special power supply and a corresponding water cooling system of the magnet are omitted, the cost is reduced, and the ECR ion source device has smaller volume and more compact structure in the similar equipment; the ion source can work continuously and stably, stably provides ions under lower air pressure and has high compatibility with gas, due to the characteristic of no cathode, the provided ions have high cleanliness, the gas can be fully ionized in a mode of circularly and uniformly feeding the ionized gas, and the obtained beam current intensity is high.
Drawings
FIG. 1 is a schematic diagram of the principles of the present invention;
FIG. 2 is a tri-gate structure of the present invention;
FIG. 3 is a sectional structural view of the present embodiment;
FIG. 4 is a schematic diagram of the tri-gate power connection of the present embodiment;
fig. 5 is a three-gate structure view of the present embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
As shown in fig. 1 to 5, the ECR ion source apparatus according to the present embodiment includes: the microwave feeding window 2 is positioned between the circular waveguide tube 1 and the arc starting cavity 3, plays a role of sealing vacuum and does not prevent microwave transmission, a magnet group 4 is arranged in the arc starting cavity, a tri-grid 5 is arranged beside the magnet group, and three electrodes 7 of three pole pieces of the tri-grid respectively penetrate through a flange and extend out of the vacuum to be connected with high voltage electricity; the circular waveguide tube 1 is externally connected with a microwave source, microwaves are transmitted into the circular waveguide tube 1 through a coaxial cable 14, the coaxial cable 14 extends into the antenna 8 and enters the circular waveguide tube 1, and the optimal angle of the antenna 8 is 90 degrees. A ceramic cover is arranged outside the microwave feed-in window 2; a ceramic cavity is arranged outside the arc starting cavity 3 and used for fixing and insulating the electrode 7;
the circular waveguide tube 1 of the present invention is located outside the vacuum; and a set of tri-gates 5 is provided in vacuum: the three-grid-electrode plasma source comprises an extraction stage, an acceleration stage and a grounding stage, wherein the three-grid-electrode 5 is used for extracting and accelerating ions in the plasma, the three-grid-electrode, the arc starting cavity and the microwave feed-in window are mutually insulated, each grid stage of the three-grid-electrode 5 is provided with a connecting electrode for electrifying the grid electrode, and a row of small round holes are formed in the grid electrode.
The parts inside the vacuum and the parts outside the vacuum are provided with ceramic caps 9 and 10, respectively, for insulation and mounting fixation between the parts, and near the tri-grid, a protective sheet tantalum sheet 11 resistant to high temperature and particle bombardment is provided.
Specifically, one end of the circular waveguide tube 1 is closed, and a small hole is formed in the middle of the circular waveguide tube and used for installing an antenna 8;
the antenna 8 is an electrical conductor with a circular cross section and bent into a right angle, so that the polarized microwave is phase-shifted and enters the arc striking cavity 3.
The arc starting cavity 3 is provided with a circle of fine and dense small holes at the variable cross section so as to enable ionized gas to uniformly enter the arc starting cavity.
The magnet group 4 is of an annular structure, the magnetizing direction is the thickness direction, specifically, the magnet group 4 is a round hole type permanent magnet, and the magnetic field direction is thickness magnetizing.
The three grids 5 are a group of round thin sheets, small thin round hole groups are symmetrically distributed in the middle of the round thin sheets, the round hole groups of each grid are consistent in position, and voltages in different directions and different magnitudes are applied to each grid, so that ions are led out by the charged grids and pass through the small holes.
The distances between each grid of the tri-grid 5 are different and are respectively provided with an electric lug, and each grid of the tri-grid 5 is mutually insulated.
The vacuum flange 6 is a vacuum electrode flange, one end of the electrode is connected with the electric lug of the three-grid 5, and the other end of the electrode is a quick connection joint.
The vacuum flange 6 is a standard CF flange and is provided with an inlet pipe.
The electrodes 7 of the tri-gate on the vacuum flange 6 are connected to the contact lugs of the tri-gate 5 via the elastic wave plate 71.
In operation, after the ionized gas (typically argon, helium or hydrogen) passes through the vacuum electrode flange 6 through the gas inlet pipe 13, uniformly enters the arc starting cavity through a circle of fine and dense small holes distributed on the arc starting cavity 3, is ionized by microwave to form plasma, the plasma is restricted by a magnet group 4 to form plasma beams, a tri-grid 5 arranged at the end part is three pole pieces, the whole tri-grid 5 assembly is insulated with other assemblies through an insulating base 12, and the three pole pieces are mutually insulated, and are connected with high voltage electricity through an electrode 7, as shown in fig. 4, the first pole is an extraction pole, the second pole is an accelerating pole (a suppression pole), the third pole is a grounding pole (a deceleration pole), the highest-15 kV high voltage is connected between the extraction pole and the grounding pole, and the highest +45kV high voltage is connected between the accelerating pole and the grounding pole, so that ions in the plasma beam are extracted and accelerated.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. An ECR ion source device comprising a circular waveguide (1) and an arc starting chamber (3), characterized in that:
the microwave arc striking device also comprises a microwave feed-in window (2), wherein the microwave feed-in window (2) is positioned between the circular waveguide tube (1) and the arc striking cavity (3); the circular waveguide tube (1) is connected with the arc starting cavity (3) through the microwave feed-in window (2), and the other end of the circular waveguide tube is provided with an antenna (8); a ceramic cover is arranged outside the microwave feed-in window (2);
a magnet group (4) is arranged in the arc starting cavity (3), a tri-grid (5) is arranged at one end of the magnet group (4), the arc starting cavity (3) is connected with a vacuum flange (6), and the vacuum flange (6) is used for isolating vacuum and fixing an electrode (7) of the tri-grid; a ceramic cavity is arranged outside the arc starting cavity (3) and used for fixing and insulating the electrode (7);
three electrodes (7) of three pole pieces of the tri-grid (5) respectively penetrate through the flange and extend out of the vacuum to be connected with high-voltage electricity;
the circular waveguide tube (1) is externally connected with a microwave source, microwaves are transmitted into the circular waveguide tube (1) through a coaxial cable (14), and the coaxial cable (14) extends into the antenna (8) and enters the circular waveguide tube (1).
2. The ECR ion source apparatus as defined in claim 1, wherein: one end of the circular waveguide tube (1) is closed, and a small hole is formed in the middle of the circular waveguide tube and used for installing an antenna (8).
3. The ECR ion source apparatus as defined in claim 1, wherein: the antenna (8) is an electric conductor with a circular section and bent into a right angle.
4. The ECR ion source apparatus as defined in claim 1, wherein: the arc starting cavity (3) is provided with a circle of fine and dense small holes at the variable cross section so as to enable ionized gas to uniformly enter the arc starting cavity.
5. The ECR ion source apparatus as defined in claim 1, wherein: the magnet group (4) is a round hole type permanent magnet, and the direction of the magnetic field is thickness magnetization.
6. The ECR ion source apparatus as defined in claim 1, wherein: the three grid electrodes (5) are small thin circular hole groups which are symmetrically distributed in the middle of a group of circular thin sheets, and the positions of the circular hole groups of each grid electrode are consistent.
7. The ECR ion source apparatus as defined in claim 1, wherein: the distances between each grid of the three grids (5) are different and are respectively provided with an electric lug, and each grid of the three grids (5) is mutually insulated.
8. The ECR ion source apparatus as defined in claim 1, wherein: the vacuum flange (6) is a vacuum electrode flange, one end of the electrode is connected with the electric lug of the three-grid (5), and the other end of the electrode is connected with a quick connection joint.
9. The ECR ion source apparatus as defined in claim 1, wherein: the vacuum flange (6) is a standard CF flange and is provided with an air inlet pipe.
10. The ECR ion source apparatus as defined in claim 1, wherein: when the electrode (7) of the tri-grid on the vacuum flange (6) is connected with the electric lug of the tri-grid (5), the electrode is connected with the electric lug through the elastic wave plate (71).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110896433.XA CN113611586A (en) | 2021-08-05 | 2021-08-05 | ECR ion source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110896433.XA CN113611586A (en) | 2021-08-05 | 2021-08-05 | ECR ion source device |
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| Publication Number | Publication Date |
|---|---|
| CN113611586A true CN113611586A (en) | 2021-11-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110896433.XA Pending CN113611586A (en) | 2021-08-05 | 2021-08-05 | ECR ion source device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116456567A (en) * | 2023-04-24 | 2023-07-18 | 中国科学院近代物理研究所 | Cooling structure for superconducting ECR ion source and water-cooling arc cavity assembly |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4883968A (en) * | 1988-06-03 | 1989-11-28 | Eaton Corporation | Electron cyclotron resonance ion source |
| JPH0845458A (en) * | 1994-07-29 | 1996-02-16 | Nissin Electric Co Ltd | Ion source device |
| US20030006708A1 (en) * | 2001-05-17 | 2003-01-09 | Ka-Ngo Leung | Microwave ion source |
| CN109786205A (en) * | 2019-01-30 | 2019-05-21 | 中国科学院近代物理研究所 | Electron cyclotron resonance ion source |
| CN215680605U (en) * | 2021-08-05 | 2022-01-28 | 安徽费曼尔科技有限公司 | ECR ion source device |
-
2021
- 2021-08-05 CN CN202110896433.XA patent/CN113611586A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4883968A (en) * | 1988-06-03 | 1989-11-28 | Eaton Corporation | Electron cyclotron resonance ion source |
| JPH0845458A (en) * | 1994-07-29 | 1996-02-16 | Nissin Electric Co Ltd | Ion source device |
| US20030006708A1 (en) * | 2001-05-17 | 2003-01-09 | Ka-Ngo Leung | Microwave ion source |
| CN109786205A (en) * | 2019-01-30 | 2019-05-21 | 中国科学院近代物理研究所 | Electron cyclotron resonance ion source |
| CN215680605U (en) * | 2021-08-05 | 2022-01-28 | 安徽费曼尔科技有限公司 | ECR ion source device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116456567A (en) * | 2023-04-24 | 2023-07-18 | 中国科学院近代物理研究所 | Cooling structure for superconducting ECR ion source and water-cooling arc cavity assembly |
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