CN117840840B - Megasonic-assisted large-diameter silicon carbide wafer detection equipment and detection method thereof - Google Patents
Megasonic-assisted large-diameter silicon carbide wafer detection equipment and detection method thereof Download PDFInfo
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- CN117840840B CN117840840B CN202410265366.5A CN202410265366A CN117840840B CN 117840840 B CN117840840 B CN 117840840B CN 202410265366 A CN202410265366 A CN 202410265366A CN 117840840 B CN117840840 B CN 117840840B
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- 238000001514 detection method Methods 0.000 title claims abstract description 59
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 31
- 238000005498 polishing Methods 0.000 claims abstract description 132
- 239000007788 liquid Substances 0.000 claims abstract description 74
- 235000012431 wafers Nutrition 0.000 claims description 125
- 239000000243 solution Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 24
- 238000007689 inspection Methods 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to the technical field of crystal detection, in particular to megasonic auxiliary large-diameter silicon carbide wafer detection equipment and a detection method thereof; the invention provides megasonic auxiliary large-diameter silicon carbide wafer detection equipment, wherein a megasonic generator is fixed on a workbench and is suitable for vibrating polishing liquid; the positioning sleeve is arranged on the workbench in a sliding manner and is suitable for limiting the wafer; the polishing disk is rotatably arranged on the workbench and is suitable for abutting against the upper surface of the wafer; the detection assembly is arranged on the workbench in a lifting manner and is linked with the positioning sleeve; wherein, after the polishing solution is injected into the workbench, the megasonic generator is suitable for oscillating the polishing solution to uniformly distribute the polishing solution on the surface of the wafer; after polishing, the locating sleeve drives the wafer to move circumferentially to the detection assembly, and the detection assembly is suitable for detecting whether the surface of the workpiece is qualified or not.
Description
Technical Field
The invention relates to the technical field of crystal detection, in particular to megasonic auxiliary large-diameter silicon carbide wafer detection equipment and a detection method thereof.
Background
In the semiconductor silicon carbide substrate industry, the traditional wafer polishing method is chemical mechanical polishing, and the chemical mechanical polishing mechanism is as follows: the material removal of the SiC wafer surface is achieved by a combination of chemical oxidation and mechanical grinding. In the chemical mechanical polishing process, a softening layer with lower hardness is generated on the surface of the wafer due to chemical oxidation, and meanwhile, the softening layer is removed through a mechanical grinding effect.
At present, after a large-diameter silicon carbide wafer is polished, whether the surface finish is qualified or not needs to be detected, and a detection mechanism needs to be arranged on polishing equipment so as to ensure the qualification rate after polishing.
Therefore, it is necessary to develop a megasonic-assisted large-diameter silicon carbide wafer inspection apparatus and an inspection method thereof.
Disclosure of Invention
The invention aims to provide megasonic auxiliary large-diameter silicon carbide wafer detection equipment and a detection method thereof.
In order to solve the above technical problems, the present invention provides a megasonic-assisted large-diameter silicon carbide wafer inspection apparatus, comprising:
The device comprises a workbench, a megasonic generator, a polishing disc, a positioning sleeve and a detection assembly, wherein the megasonic generator is fixed on the workbench and is suitable for vibrating polishing liquid;
the positioning sleeve is arranged on the workbench in a sliding manner and is suitable for limiting the wafer;
the polishing disk is rotatably arranged on the workbench and is suitable for abutting against the upper surface of the wafer;
The detection assembly is arranged on the workbench in a lifting manner and is linked with the positioning sleeve;
Wherein, after the polishing solution is injected into the workbench, the megasonic generator is suitable for oscillating the polishing solution to uniformly distribute the polishing solution on the surface of the wafer;
after polishing, the locating sleeve drives the wafer to move circumferentially to the detection assembly, and the detection assembly is suitable for detecting whether the surface of the workpiece is qualified or not.
Preferably, a surrounding baffle is arranged on the workbench along the circumferential direction, and the surrounding baffle is suitable for blocking the polishing solution from flowing to the periphery; the height of the enclosure is greater than the thickness of the wafer.
Preferably, the polishing disc is provided with a liquid inlet, and the polishing liquid is suitable for continuously flowing to the workbench through the liquid inlet.
Preferably, the bottom wall of the workbench is provided with a plurality of liquid outlets, and the liquid outlets are circumferentially arranged along the workbench.
Preferably, the detection assembly includes: the detection part is horizontally arranged, and the support rod is fixed on one side of the detection part far away from the axis of the workbench;
the supporting rod is vertically arranged and is arranged on the workbench in a lifting manner;
the reset spring is sleeved on the outer wall of the support rod, and two ends of the reset spring are respectively fixed on the support rod and the workbench;
when the polishing disk moves downwards to be abutted with the wafer, the polishing disk is suitable for pushing the detection piece to vertically move downwards.
Preferably, the lower end of the positioning sleeve is symmetrically provided with positioning holes, a positioning column matched with the positioning holes is arranged in the workbench in a lifting manner, and the positioning column moves upwards to be suitable for being inserted into the positioning holes so as to limit the positioning sleeve.
Preferably, a driving piece is arranged on the workbench, a plurality of driving rods are radially arranged on the outer wall of the driving piece, one driving rod corresponds to one positioning sleeve, and the driving rods are suitable for pushing the positioning sleeve to move circumferentially.
Preferably, an annular groove is formed in the inner bottom wall of the workbench, a protruding block is fixed at the lower end of the positioning sleeve, the protruding block is slidably arranged in the annular groove, and the positioning sleeve is suitable for being driven to circumferentially rotate along the annular groove when the driving rod circumferentially rotates.
Preferably, an elliptical groove is formed in the position, corresponding to the detection piece, of the inner bottom wall of the workbench, a bearing plate is hinged to the elliptical groove, and the surface of the bearing plate is coplanar with the inner bottom wall of the workbench;
A first inclined plane is arranged at the position, corresponding to the bearing plate, of the detection piece, and the positioning sleeve is suitable for being abutted with the first inclined plane;
when the driving rod drives the positioning sleeve to circumferentially rotate to be abutted with the first inclined surface, the positioning sleeve is suitable for pushing the bearing plate to downwards overturn by taking the hinging point as the axial direction, so that the wafer is inclined.
Preferably, one end of the bearing plate far away from the hinging point is hinged with a turning plate;
a second inclined plane is arranged at the position, corresponding to the turning plate, of the detection piece, and the positioning sleeve is suitable for being abutted with the second inclined plane;
After the wafer is unqualified in detection, the driving rod drives the positioning sleeve to reversely rotate, the positioning sleeve is abutted with the second inclined plane, so that the material turning plate is turned downwards, and the wafer is suitable for falling downwards along the material turning plate.
Preferably, a protective cover is sleeved outside the megasonic generator, the protective cover is of a net structure, and the protective cover can protect the megasonic generator inside.
On the other hand, the invention also provides a detection method of the megasonic auxiliary large-diameter silicon carbide wafer detection equipment, which comprises the following steps:
the wafers are sequentially placed in a positioning sleeve, and the positioning sleeve is suitable for limiting the wafers;
The positioning column moves upwards to limit the positioning sleeve;
Delivering the polishing solution into the workbench until the injection amount of the polishing solution overflows the upper surface of the wafer;
The megasonic generator is used for vibrating the polishing liquid so that the particle size in the polishing liquid can be uniformly distributed on the surface of the wafer, and the polishing disk is moved downwards and rotates circumferentially and is suitable for polishing the wafer;
During polishing, the polishing liquid is continuously conveyed to the workbench through the liquid inlet, and the liquid outlet continuously conveys the polishing liquid outwards, so that the liquid inlet speed is consistent with the liquid outlet speed, and the polishing liquid in the enclosure is kept in a constant quantity;
After the wafer polishing is finished, the liquid outlet empties the polishing liquid;
the positioning column moves downwards, the positioning column is separated from the positioning sleeve, the driving piece drives the driving rod to circumferentially rotate, and the driving rod is suitable for driving the positioning sleeve to move along the annular groove;
after the locating sleeve moves to the lower part of the detection piece, the locating sleeve is suitable for being abutted against the first inclined surface, and the locating sleeve is suitable for extruding the bearing plate to downwards overturn by taking the hinge point as the axis so as to enable the wafer to be in an inclined state and drain polishing liquid on the surface of the wafer;
When the positioning sleeve drives the wafer to pass through the lower part of the detecting piece, the detecting piece is suitable for detecting whether the surface polishing of the wafer is qualified or not;
After the wafer is unqualified in polishing, the driving piece reversely rotates, and the driving rod is suitable for driving the positioning sleeve to reversely rotate;
when the positioning sleeve reversely rotates to be abutted with the second inclined plane, the positioning sleeve is suitable for extruding the material turning plate to enable the material turning plate to downwards turn, and the wafer is suitable for downwards falling from the material turning plate.
The megasonic auxiliary large-diameter silicon carbide wafer detection equipment has the advantages that whether the finish of a workpiece is qualified after polishing can be detected through the arrangement of the detection assembly, and the polishing solution on the surface of the qualified wafer can be drained rapidly, meanwhile, unqualified wafers can be removed and recycled, and the working efficiency is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
In order to make the above objects, features and advantages of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a perspective view of a preferred embodiment of a megasonic-assisted large diameter silicon carbide wafer inspection apparatus of the present invention;
FIG. 2 is a perspective view of the table and detection assembly of the present invention;
FIG. 3 is a perspective view of the detection assembly of the present invention;
FIG. 4 is a perspective view of the carrier plate and drive rod of the present invention;
Fig. 5 is a perspective view of the carrier plate and riser of the present invention.
In the figure:
1. a work table; 10. a surrounding baffle; 11. an elliptical groove; 12. a turning plate; 13. a ring groove; 14. a driving rod; 15. a carrying plate; 16. a vertical plate; 17. a bump;
2. A megasonic generator; 3. Polishing disk; 4. a positioning sleeve;
5. a detection assembly; 51. a support rod; 52. a detecting member; 53. a first inclined surface; 54. and a second inclined plane.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In one embodiment, as shown in fig. 1 to 5, the present invention provides a megasonic-assisted large-diameter silicon carbide wafer inspection apparatus comprising: a workbench 1, a megasonic generator 2, a polishing disc 3, a positioning sleeve 4 and a detection assembly 5, wherein the megasonic generator 2 is fixed on the workbench 1, and the megasonic generator 2 is suitable for vibrating polishing liquid; after the polishing solution is conveyed onto the workbench 1, the megasonic generator 2 is suitable for being soaked in the polishing solution, the megasonic generator 2 is suitable for vibrating the polishing solution, and the frequency of the megasonic generator is 800KHz-2000KHz and can be divided into low, medium and high frequency 3 sections which respectively correspond to 800KHz, 1500KHz and 2000KHz; the working temperature is 25-35 ℃. The wafer disclosed by the invention is a large-diameter wafer, and the wafer can be a 6-inch silicon carbide substrate slice; the positioning sleeve 4 is arranged on the workbench 1 in a sliding manner, and the positioning sleeve 4 is suitable for limiting wafers; before polishing, the positioning sleeve 4 is suitable for limiting and fixing the wafer, and after polishing, the positioning sleeve 4 is suitable for driving the wafer to circumferentially rotate on the inner bottom of the workbench 1. The polishing disc 3 is rotatably arranged on the workbench 1, and the polishing disc 3 is suitable for abutting against the upper surface of a wafer; the diameter of the polishing disk 3 is smaller than the inner diameter of the enclosure 10. The detection assembly 5 is arranged on the workbench 1 in a lifting manner, and the detection assembly 5 is linked with the positioning sleeve 4; when the polishing disk 3 does not move downwards, the horizontal height of the detection assembly 5 is greater than that of the positioning sleeve 4; and the polishing pad 3 is adapted to push the detecting member 5 to move vertically downward when the polishing pad 3 is moved vertically toward the wafer. Wherein, after the polishing solution is injected into the workbench 1, the megasonic generator 2 is suitable for oscillating the polishing solution to uniformly distribute the polishing solution on the surface of the wafer; after polishing, the positioning sleeve 4 drives the wafer to move circumferentially to the detection assembly 5, and the detection assembly 5 is suitable for detecting whether the surface of the workpiece is qualified or not. Through the arrangement of the megasonic generator 2, particles in the polishing solution can be uniformly distributed on the upper surface of the wafer, the polishing effect of the polishing disc 3 on the surface of the wafer is provided, the apparent mass of the large-diameter wafer is improved, and the production cost is reduced. And continuously conveying and discharging the polishing liquid, so that the influence of polished particles on the surface of the wafer on the polishing effect can be avoided. The arrangement of the detecting piece 52 can rapidly drain the qualified polishing liquid on the surface of the wafer, meanwhile, reject and recycle unqualified wafers, and improve the working efficiency.
In order to facilitate the maintenance of a certain amount of polishing liquid, a surrounding baffle 10 is arranged on the workbench 1 along the circumferential direction, and the surrounding baffle 10 is suitable for blocking the polishing liquid from flowing to the periphery; the height of the enclosure 10 is substantially greater than the thickness of the wafer. The enclosure 10 is configured to allow the wafer and megasonic generator 2 to be immersed in the polishing solution. The polishing disk 3 is provided with a liquid inlet, and polishing liquid is suitable for continuously flowing to the workbench 1 through the liquid inlet. A plurality of liquid outlets are formed in the bottom wall of the workbench 1, and the liquid outlets are arranged along the circumferential direction of the workbench 1. When the wafer is polished, the liquid inlet and the liquid outlet are kept in an open-close state, namely, one side continuously conveys the polishing liquid into the enclosure 10, and the other side continuously discharges the polishing liquid outwards through the liquid outlet. In this way, the polishing liquid in the enclosure 10 can be kept constant; the liquid outlet continuously discharges the polishing liquid outwards, so that particles polished off on the surface of the wafer can be discharged out of the workbench 1 along the polishing liquid, and the effect of the polishing disk 3, which is influenced by the polished off particles, is avoided.
In order to facilitate the inspection of whether the wafer is acceptable, the inspection assembly 5 comprises: the device comprises a supporting rod 51, a reset spring and a detection piece 52, wherein the detection piece 52 is horizontally arranged, and the supporting rod 51 is fixed on one side of the detection piece 52 far away from the axis of the workbench 1; the supporting rod 51 is vertically arranged, and the supporting rod 51 is arranged on the workbench 1 in a lifting manner; when the polishing disk 3 moves downwards to be abutted against the wafer, the polishing disk 3 is suitable for pushing the detecting piece 52 so that the supporting rod 51 can shrink and move towards the workbench 1; at this time, the return spring is in a stretched state; and when the polishing pad 3 is away from the table 1, the return spring is adapted to urge the support rod 51 to return upward to the original height. The reset spring is sleeved on the outer wall of the supporting rod 51, and two ends of the reset spring are respectively fixed on the supporting rod 51 and the workbench 1; wherein the polishing pad 3 is adapted to push the detecting piece 52 vertically downward when the polishing pad 3 moves downward to abut against the wafer. The detecting piece 52 is made of waterproof and wear-resistant materials, and a visual detector is arranged on one side of the detecting piece 52 and is suitable for detecting whether the surface polishing of the wafer is qualified or not.
In order to facilitate the limiting of the positioning sleeve 4, the lower end of the positioning sleeve 4 is symmetrically provided with a positioning hole, a positioning column matched with the positioning hole is arranged in the workbench 1 in a lifting manner, and the positioning column moves upwards to be suitable for being inserted into the positioning hole so as to limit the positioning sleeve 4. After the wafer is placed in the positioning sleeve 4, the positioning column moves upwards to be inserted into the positioning sleeve 4, and is suitable for limiting the positioning sleeve 4 to prevent the positioning sleeve 4 from moving relative to the workbench 1. The height of the locating sleeve 4 is smaller than the thickness of the wafer, and after the wafer is placed in the locating sleeve 4, the upper surface of the wafer is suitable for being abutted with the polishing disc 3.
In order to facilitate the circumferential rotation of the positioning sleeve 4, a driving member is disposed on the workbench 1, a plurality of driving rods 14 are radially disposed on the outer wall of the driving member, one driving rod 14 corresponds to one positioning sleeve 4, and the driving rods 14 are adapted to push the positioning sleeve 4 to move circumferentially. When the polishing disk 3 polishes a wafer, the driving piece stops working, after polishing, the positioning column contracts downwards to move, and after the positioning column is separated from the positioning sleeve 4, the positioning sleeve 4 is suitable for moving in the annular groove 13; the driving member is adapted to drive the driving rod 14 to rotate circumferentially, until the driving rod 14 abuts against the outer wall of the positioning sleeve 4, the driving rod 14 is adapted to drive the positioning sleeve 4 to rotate circumferentially, and the driving rod 14 is adapted to drive the positioning sleeve 4 and the wafer to move below the detecting member 52.
An annular groove 13 is formed in the inner bottom wall of the workbench 1, a protruding block is fixed at the lower end of the positioning sleeve 4 and is slidably arranged in the annular groove 13, and when the driving rod 14 rotates circumferentially, the positioning sleeve 4 is suitable for being driven to rotate circumferentially along the annular groove 13. The ring groove 13 is communicated with the elliptical groove 11, and the driving rod 14 is suitable for driving the positioning sleeve 4 to move from the ring groove 13 to the upper side of the bearing plate 15.
In order to facilitate draining of the polishing solution remained on the surface of the wafer, an elliptical groove 11 is formed in the inner bottom wall of the workbench 1 corresponding to the detecting piece 52, a bearing plate 15 is hinged on the elliptical groove 11, and the surface of the bearing plate 15 is coplanar with the inner bottom wall of the workbench 1; the detecting piece 52 is provided with a first inclined plane 53 corresponding to the bearing plate 15, and the positioning sleeve 4 is adapted to abut against the first inclined plane 53; when the driving rod 14 drives the positioning sleeve 4 to circumferentially rotate to abut against the first inclined surface 53, at this time, the positioning sleeve 4 is located above the bearing plate 15; the first inclined surface 53 is adapted to press the positioning sleeve 4, and the positioning sleeve 4 is adapted to push the carrier plate 15 to flip downwards with the hinge point as an axis, so that the wafer is inclined. At this time, the polishing liquid remained on the surface of the wafer is suitable for dripping downwards, so that the draining effect of the wafer is quickened. When the positioning sleeve 4 drives the wafer to move away from the elliptical groove 11, the bearing plate 15 is restored to the horizontal state.
In order to facilitate recovery of the failed wafers, a material turning plate 12 is hinged to one end of the bearing plate 15 away from the hinging point; the blanking plate 12 is adapted to be turned downwards in relation to the carrier plate 15. The bearing plate 15 is close to one end of the material turning plate 12, a vertical plate 16 is arranged, the vertical plate 16 is slidably arranged on the bearing plate 15, and the vertical plate 16 can turn over towards the material turning plate 12. When the positioning sleeve 4 moves from left to right to abut against the vertical plate 16, the positioning sleeve 4 is suitable for pushing the vertical plate 16 to turn downwards, and the positioning sleeve 4 can pass over the vertical plate 16. The lower end of the vertical plate 16 is provided with a protruding block 17 near one end of the material turning plate 12, the side wall of the material turning plate 12 is provided with a groove matched with the protruding block 17, and the protruding block 17 is suitable for being inserted into the groove. When the positioning sleeve 4 moves from left to right to be abutted with the vertical plate 16, the positioning sleeve 4 is suitable for pushing the vertical plate 16 to overturn downwards; when the positioning sleeve 4 moves from right to left to be abutted against the vertical plate 16, the positioning sleeve 4 is suitable for pushing the vertical plate 16 to move towards the direction of the bearing plate, the vertical plate 16 drives the protruding block 17 to be separated from the groove, and at the moment, the turning plate 12 is suitable for turning downwards relative to the bearing plate 15. The positioning sleeve 4 is synchronously pushed by the second inclined surface 54 to incline downwards, and the positioning sleeve 4 is suitable for driving the wafer to drop downwards along the turning plate 12.
The detecting piece 52 is provided with a second inclined plane 54 corresponding to the material turning plate 12, and the positioning sleeve 4 is suitable for abutting against the second inclined plane 54; after the driving rod 14 drives the wafer to pass below the detecting member 52, the detecting member 52 is adapted to detect whether the workpiece is qualified, after the wafer is detected to be unqualified, the driving rod 14 drives the positioning sleeve 4 to rotate reversely, the positioning sleeve 4 is adapted to abut against the second inclined plane 54, after the positioning sleeve 4 is limited and extruded by the second inclined plane 54, the positioning sleeve 4 is adapted to extrude the material turning plate 12 to turn downwards, and the wafer is adapted to drop downwards along the material turning plate 12. A waste tank is arranged in the workbench 1 and is arranged below the material turning plate 12. The waste tank is characterized in that a liquid discharge hole is formed in the inner bottom wall of the waste tank, and the liquid discharge hole is in a closed state during polishing. When the wafer is inspected, the liquid discharge hole is opened to discharge the polishing liquid inside.
Preferably, a protective cover is sleeved outside the megasonic generator 2, the protective cover is of a net structure, and the protective cover can protect the megasonic generator 2 inside. The arrangement of the protective cover can avoid the foreign matters on the workbench 1 from impacting the megagenerator. The net structure of the protective cover can not influence the energy transmission of the megagenerator.
The second embodiment further provides a method for detecting a megasonic-assisted large-diameter silicon carbide wafer, which is based on the first embodiment, and includes a megasonic-assisted large-diameter silicon carbide wafer detecting device as described in the first embodiment, and the specific structure is the same as that of the first embodiment, and the method for detecting a megasonic-assisted large-diameter silicon carbide wafer is not described herein again, and is as follows:
the wafers are sequentially placed into a positioning sleeve 4, and the positioning sleeve 4 is suitable for limiting the wafers; the positioning column moves upwards to limit the positioning sleeve 4; delivering the polishing solution into the workbench 1 until the injection amount of the polishing solution overflows the upper surface of the wafer; the megasonic generator 2 operates to vibrate the polishing liquid so that the particle size in the polishing liquid can be uniformly distributed on the surface of the wafer, and the polishing platen 3 moves downward and rotates circumferentially, the polishing platen 3 being adapted to polish the wafer.
During polishing, the polishing liquid is continuously conveyed to the workbench 1 through the liquid inlet, and the liquid outlet continuously conveys the polishing liquid outwards, so that the liquid inlet speed is consistent with the liquid outlet speed, and the polishing liquid in the enclosure 10 is kept in a constant quantity; and after the wafer polishing is finished, the liquid outlet is used for exhausting the polishing liquid.
The positioning column moves downwards, the positioning column is separated from the positioning sleeve 4, the driving piece drives the driving rod 14 to circumferentially rotate, and the driving rod 14 is suitable for driving the positioning sleeve 4 to move along the annular groove 13; after the positioning sleeve 4 moves below the detecting piece 52, the positioning sleeve 4 is suitable for being abutted against the first inclined surface 53, and the positioning sleeve 4 is suitable for extruding the bearing plate 15 to downwards overturn by taking the hinge point as the axis so as to enable the wafer to be in an inclined state and drain the polishing liquid on the surface of the wafer; when the positioning sleeve 4 drives the wafer to pass under the detecting piece 52, the detecting piece 52 is suitable for detecting whether the surface polishing of the wafer is qualified or not.
After the wafer is unqualified in polishing, the driving piece reversely rotates, and the driving rod 14 is suitable for driving the positioning sleeve 4 to reversely rotate; when the positioning sleeve 4 reversely rotates to be abutted against the second inclined surface 54, the positioning sleeve 4 is suitable for extruding the material turning plate 12 to enable the material turning plate 12 to be turned downwards, and the wafer is suitable for falling downwards from the material turning plate 12.
The components (components not illustrating the specific structure) selected in the present application are common standard components or components known to those skilled in the art, and the structures and principles thereof are known to those skilled in the art through technical manuals or through routine experimental methods. Moreover, the software program related to the application is the prior art, and the application does not relate to any improvement on the software program.
In the description of embodiments of the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the several embodiments provided by the present application, it should be understood that the disclosed systems, devices, and methods may be implemented in other manners. The above-described apparatus embodiments are merely illustrative, for example, the division of the units is merely a logical function division, and there may be other manners of division in actual implementation, and for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some communication interface, device or unit indirect coupling or communication connection, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present invention may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit.
With the above-described preferred embodiments according to the present invention as an illustration, the above-described descriptions can be used by persons skilled in the relevant art to make various changes and modifications without departing from the scope of the technical idea of the present invention. The technical scope of the present invention is not limited to the description, but must be determined according to the scope of claims.
Claims (11)
1. A megasonic-assisted large diameter silicon carbide wafer inspection apparatus comprising:
The device comprises a workbench (1), a megasonic generator (2), a polishing disc (3), a positioning sleeve (4) and a detection assembly (5), wherein the megasonic generator (2) is fixed on the workbench (1), and the megasonic generator (2) is suitable for vibrating polishing liquid;
the positioning sleeve (4) is arranged on the workbench (1) in a sliding manner, and the positioning sleeve (4) is suitable for limiting a wafer;
The polishing disc (3) is rotatably arranged on the workbench (1), and the polishing disc (3) is suitable for being abutted against the upper surface of the wafer;
The detection assembly (5) is arranged on the workbench (1) in a lifting manner, and the detection assembly (5) is linked with the positioning sleeve (4);
Wherein, after the polishing solution is injected onto the workbench (1), the megasonic generator (2) is suitable for oscillating the polishing solution to uniformly distribute the polishing solution on the surface of the wafer;
After polishing, the positioning sleeve (4) drives the wafer to move towards the detection assembly (5) in the circumferential direction, and the detection assembly (5) is suitable for detecting whether the surface of a workpiece is qualified or not;
the detection assembly (5) comprises: the device comprises a supporting rod (51), a reset spring and a detection piece (52), wherein the detection piece (52) is horizontally arranged, and the supporting rod (51) is fixed on one side, far away from the axis of the workbench (1), of the detection piece (52);
the supporting rod (51) is vertically arranged, and the supporting rod (51) is arranged on the workbench (1) in a lifting manner;
The reset spring is sleeved on the outer wall of the supporting rod (51), and two ends of the reset spring are respectively fixed on the supporting rod (51) and the workbench (1);
wherein when the polishing disk (3) moves downward to abut against the wafer, the polishing disk (3) is adapted to push the detecting member (52) to move vertically downward.
2. A megasonic assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 1 wherein:
a surrounding baffle (10) is arranged on the workbench (1) along the circumferential direction, and the surrounding baffle (10) is suitable for blocking polishing liquid from flowing to the periphery; the height of the enclosure (10) is greater than the thickness of the wafer.
3. A megasonic assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 2 wherein:
The polishing disc (3) is provided with a liquid inlet, and polishing liquid is suitable for continuously flowing to the workbench (1) through the liquid inlet.
4. A megasonic assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 3 wherein:
a plurality of liquid outlets are formed in the bottom wall of the workbench (1), and the liquid outlets are circumferentially arranged along the workbench (1).
5. A megasonic assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 4 wherein:
The positioning sleeve (4) is characterized in that positioning holes are symmetrically formed in the lower end of the positioning sleeve, a positioning column matched with the positioning holes is arranged in the workbench (1) in a lifting mode, and the positioning column moves upwards and is suitable for being inserted into the positioning holes so as to limit the positioning sleeve (4).
6. A megasonic assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 5 wherein:
The workbench (1) is provided with a driving piece, the outer wall of the driving piece is radially provided with a plurality of driving rods (14), one driving rod (14) corresponds to one positioning sleeve (4), and the driving rods (14) are suitable for pushing the positioning sleeve (4) to move circumferentially.
7. A megasonic assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 6 wherein:
An annular groove (13) is formed in the inner bottom wall of the workbench (1), a protruding block is fixed at the lower end of the positioning sleeve (4), the protruding block is slidably arranged in the annular groove (13), and the driving rod (14) is suitable for driving the positioning sleeve to circumferentially rotate along the annular groove (13) when circumferentially rotating.
8. A megasonic assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 7 wherein:
an elliptical groove (11) is formed in the position, corresponding to the detection piece (52), of the inner bottom wall of the workbench (1), a bearing plate (15) is hinged to the elliptical groove (11), and the surface of the bearing plate (15) is coplanar with the inner bottom wall of the workbench (1);
a first inclined plane (53) is arranged at the position, corresponding to the bearing plate (15), of the detection piece (52), and the positioning sleeve (4) is suitable for being abutted with the first inclined plane (53);
when the driving rod (14) drives the positioning sleeve (4) to circumferentially rotate to be abutted against the first inclined surface (53), the positioning sleeve (4) is suitable for pushing the bearing plate (15) to downwards overturn by taking the hinging point as the axial direction, so that the wafer is inclined.
9. A megasonic assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 8 wherein:
One end of the bearing plate (15) far away from the hinging point is hinged with a turning plate;
A second inclined plane (54) is arranged at the position, corresponding to the turning plate, of the detection piece (52), and the positioning sleeve (4) is suitable for being abutted with the second inclined plane (54);
after the wafer is unqualified in detection, the driving rod (14) drives the positioning sleeve (4) to reversely rotate, the positioning sleeve (4) is abutted with the second inclined surface (54), so that the material turning plate is turned downwards, and the wafer is suitable for falling downwards along the material turning plate.
10. A megasonic assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 9 wherein:
a protective cover is sleeved outside the megasonic generator (2), the protective cover is of a net structure, and the protective cover can protect the megasonic generator (2) inside.
11. A method of inspecting a megasonic-assisted large diameter silicon carbide wafer inspection apparatus using a megasonic-assisted large diameter silicon carbide wafer inspection apparatus as defined in claim 10 comprising the steps of:
The wafers are sequentially placed into a positioning sleeve (4), and the positioning sleeve (4) is suitable for limiting the wafers;
the positioning column moves upwards to limit the positioning sleeve (4);
delivering the polishing solution into the workbench (1) until the injection amount of the polishing solution overflows the upper surface of the wafer;
the megasonic generator (2) is operated to vibrate the polishing liquid so that the particle size in the polishing liquid can be uniformly distributed on the surface of the wafer, the polishing disk (3) moves downwards and rotates circumferentially, and the polishing disk (3) is suitable for polishing the wafer;
during polishing, the polishing liquid is continuously conveyed to the workbench (1) through the liquid inlet, and the liquid outlet continuously conveys the polishing liquid outwards, so that the liquid inlet speed is consistent with the liquid outlet speed, and the polishing liquid in the enclosure (10) is kept in a constant quantity;
After the wafer polishing is finished, the liquid outlet empties the polishing liquid;
The positioning column moves downwards, the positioning column is separated from the positioning sleeve (4), the driving piece drives the driving rod (14) to circumferentially rotate, and the driving rod (14) is suitable for driving the positioning sleeve (4) to move along the annular groove (13);
After the locating sleeve (4) moves to the lower part of the detecting piece (52), the locating sleeve (4) is suitable for being abutted against the first inclined surface (53), and the locating sleeve (4) is suitable for extruding the bearing plate (15) to overturn downwards by taking a hinge point as an axial direction so as to enable a wafer to be in an inclined state and drain polishing liquid on the surface of the wafer;
When the positioning sleeve (4) drives the wafer to pass under the detecting piece (52), the detecting piece (52) is suitable for detecting whether the surface polishing of the wafer is qualified or not;
after the wafer is unqualified in polishing, the driving piece reversely rotates, and the driving rod (14) is suitable for driving the positioning sleeve (4) to reversely rotate;
when the positioning sleeve (4) reversely rotates to be abutted with the second inclined surface (54), the positioning sleeve (4) is suitable for extruding the material turning plate to enable the material turning plate to be turned downwards, and the wafer is suitable for falling downwards from the material turning plate.
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| CN202410265366.5A CN117840840B (en) | 2024-03-08 | 2024-03-08 | Megasonic-assisted large-diameter silicon carbide wafer detection equipment and detection method thereof |
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| CN202410265366.5A CN117840840B (en) | 2024-03-08 | 2024-03-08 | Megasonic-assisted large-diameter silicon carbide wafer detection equipment and detection method thereof |
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| CN117840840B true CN117840840B (en) | 2024-05-07 |
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| CN1484566A (en) * | 2000-11-29 | 2004-03-24 | 皮斯洛奎斯特公司 | Crosslinked polyethylene polishing pad for chemical mechnical polishing polishing apparatus and polishing method |
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| CN117840840A (en) | 2024-04-09 |
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