CN117832827B - High-gain microstrip antenna with high sidelobe suppression and communication equipment - Google Patents
High-gain microstrip antenna with high sidelobe suppression and communication equipment Download PDFInfo
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- CN117832827B CN117832827B CN202410091906.2A CN202410091906A CN117832827B CN 117832827 B CN117832827 B CN 117832827B CN 202410091906 A CN202410091906 A CN 202410091906A CN 117832827 B CN117832827 B CN 117832827B
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- 238000004891 communication Methods 0.000 title claims abstract description 10
- 230000005855 radiation Effects 0.000 claims abstract description 56
- 230000003071 parasitic effect Effects 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000008878 coupling Effects 0.000 claims abstract description 3
- 238000010168 coupling process Methods 0.000 claims abstract description 3
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- 230000002195 synergetic effect Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 description 14
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- 238000011068 loading method Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 4
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- 238000012512 characterization method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
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Abstract
The invention discloses a high-gain microstrip antenna with high sidelobe suppression and communication equipment, which comprise a dielectric substrate, wherein one surface of the dielectric substrate is provided with an antenna radiation patch, the antenna radiation patch adopts coaxial feed, the antenna radiation patch is provided with two grooves and a slot, and a parasitic patch is arranged in each groove; by the synergistic effect of the two grooves and the slots, the out-of-phase current of the microstrip antenna working in the higher-order mode flows around the antenna radiation patch, so that most of out-of-phase current is eliminated, and the side lobe level of the antenna is reduced; the parasitic patch is loaded in the groove, and the surface current excited by the coupling of the parasitic patch is completely in phase with the current at the two sides of the antenna radiation patch, so that the suppression level of side lobes is further enhanced while the microstrip antenna keeps a higher-order mode. The invention regulates and controls the far-field radiation of the antenna, and obtains good sidelobe suppression level and higher directional gain on the premise of keeping the section low and the structure simple.
Description
Technical Field
The invention relates to the field of communication, in particular to a high-gain microstrip antenna with high sidelobe suppression and communication equipment.
Background
Microstrip antenna (MSA) as a novel antenna has the advantages of small volume, light weight, multiple frequency bands, low section, low cost, capability of simultaneously manufacturing feeder lines and matching networks with antenna structures, and the like, is widely applied in the past decades, and has wide application prospects in the fields of Internet of things, intelligent home, wireless sensing networks, vehicle-mounted radars, aerospace and the like. However, the microstrip antenna conventionally operated in the fundamental mode has inherent disadvantages of low radiation gain, limited directivity, and not high directivity.
According to the Friis equation of the antenna, the long-range wireless transmission requires the antenna to have a high gain. The radiation gain of the microstrip antenna is improved, and besides the traditional antenna unit array method, a stacking method, a reflecting surface method, an air medium loading method, a short circuit probe method, a slot digging method and a high-order mode method are adopted at present. Among them, the antenna element group array method increases the overall size and design complexity of the antenna, the stacking method has high profile or low aperture efficiency, the reflection surface method and the air layer method increase the gain at the cost of increasing the antenna height, and the maximum directivity achievable by the short circuit probe method and the slot digging method is still limited. Therefore, the high-order mode microstrip antenna maintains extremely low antenna section, has large unit radiation effective area, can realize high gain performance without complex structure, can replace a small-scale array, is beneficial to improving the radiation efficiency of the antenna, and has important practical value.
Compared with the fundamental mode microstrip antenna, the higher-order mode microstrip antenna has larger electrical size naturally, so that the high-gain radiation is realized. However, conventional higher-order mode microstrip antennas typically have out-of-phase currents that cause the radiation pattern to split or have very high side lobe levels. The main lobe of the antenna radiation pattern generally represents the coverage area of the signal transmission target, while the side lobe represents ineffective energy radiation, and the higher the side lobe level, the more signals are transmitted to the non-target area, so that on one hand, energy is wasted, and on the other hand, the risk of information leakage is increased for secret-related communication.
Disclosure of Invention
In order to overcome the above-mentioned drawbacks and disadvantages of the prior art, an object of the present invention is to provide a high-gain microstrip antenna with high sidelobe suppression and a communication device.
The aim of the invention is achieved by the following technical scheme:
The high-gain microstrip antenna with high sidelobe suppression comprises a dielectric substrate, wherein one surface of the dielectric substrate is provided with an antenna radiation patch, the antenna radiation patch adopts coaxial feed, the antenna radiation patch is provided with two grooves and a slot, and a parasitic patch is arranged in each groove;
By the synergistic effect of the two grooves and the slots, the out-of-phase current of the microstrip antenna working in the higher-order mode flows around the antenna radiation patch, so that most of out-of-phase current is eliminated, and the side lobe level of the antenna is reduced;
The parasitic patch is loaded in the groove, and the surface current excited by the coupling of the parasitic patch is completely in phase with the current at the two sides of the antenna radiation patch, so that the suppression level of side lobes is further enhanced while the microstrip antenna keeps a higher-order mode.
Further, the two slots are arranged vertically symmetrically with respect to the center point of the dielectric substrate, and one side of each slot coincides with the non-radiation side of the antenna radiation patch.
Further, the gap is vertically arranged between the two grooves and symmetrically arranged about the center of the dielectric substrate.
Further, the slot, the antenna radiating patch, the parasitic patch, and the dielectric substrate are the same shape.
Further, the two slots are equal in size.
Further, the gap is long.
Further, the length of the slot is 0.3λ 0, the width is 0.009 λ 0, and λ 0 is the wavelength of the free space corresponding to the frequency point of the antenna.
Further, the method comprises the steps of,
When the high-gain microstrip antenna is a rectangular microstrip patch antenna, the slot is rectangular, the parasitic patch is rectangular, the length of the slot is 0.28lambada 0, the width is 0.3lambada 0, and the distance between the side length of the parasitic patch and the antenna radiation patch is 0.009 lambada 0;
when the high-gain microstrip antenna is a circular microstrip patch antenna, the slot is circular, the parasitic patch is circular, the radius of the slot is 0.14λ 0, and the distance between the side length of the parasitic patch and the antenna radiation patch is 0.009 λ 0.
Further, a dimension parameter of the parasitic patch is determined based on the characterization reflection coefficient and the E-plane pattern.
A communication device includes the high gain microstrip antenna.
Compared with the prior art, the invention has the following advantages and beneficial effects:
The invention is based on the microstrip antenna working in the higher order resonance mode, and the current distribution of the antenna in the higher order resonance mode is regulated and controlled by loading the slot, the gap and the parasitic patch structure at the proper position of the antenna radiation patch, so that the far field radiation of the antenna is regulated and controlled, and good sidelobe suppression level and higher direction gain are obtained on the premise of keeping the section low and the structure simple.
Drawings
FIG. 1 is a schematic structural view of embodiment 1 of the present invention;
FIG. 2 is a schematic structural view of embodiment 2 of the present invention;
Fig. 3 (a) and 3 (b) are return loss diagrams of embodiments 1 and 2, respectively, of the present invention;
fig. 4 (a) and 4 (b) are E-plane directivity patterns at frequency points in embodiments 1 and 2 of the present invention, respectively;
Fig. 5 (a) and 5 (b) are E-plane normalized patterns of examples 1 and 2, respectively;
Fig. 6 (a) and 6 (b) are normalized directional diagrams of the E-plane (phi=90°) of the microstrip antenna according to the embodiments 1 and 2 of the present invention and the conventional high-order mode;
fig. 7 (a) and 7 (b) are schematic illustrations of the structures of the respective parts of embodiment 1 and embodiment 2 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples, but embodiments of the present invention are not limited thereto.
Example 1
As shown in fig. 1, a microstrip antenna with high side lobe suppression is a rectangular patch antenna, and includes a dielectric substrate 1, an antenna radiation patch 4 is disposed on an upper surface of the dielectric substrate 1, slots 5, 6 and a slot 7 are formed on the antenna radiation patch 4, parasitic patches 8, 9 are disposed in the slots, the antenna radiation patch 4 adopts coaxial feed, specifically, a coaxial feed probe 3 is disposed at one end of the antenna radiation patch, and the slot 7 is formed in a center of the antenna radiation patch.
The shapes of the slot, the parasitic patch and the antenna radiating patch may be the same or different. In this embodiment, the shape of the selection slot, the parasitic patch and the antenna radiating patch are preferably the same.
In this embodiment 1, the microstrip antenna is a rectangular antenna, the slot is a rectangular slot, the parasitic patch is rectangular, and the antenna radiation patch is rectangular.
Specifically, the antenna radiation patch is rectangular, wherein the side close to the coaxial feed probe 3 and opposite sides thereof is a radiation side, two side edges connected between the two radiation sides are non-radiation sides 2, the two rectangular grooves are respectively arranged on the non-radiation sides 2 and are parallel to the radiation sides, and the two parasitic patches are respectively arranged in the two rectangular grooves.
In particular, one side of the rectangular slot is open, which coincides with the non-radiating side.
The gap is formed in the center of the antenna radiation patch 4 and parallel to the radiation edge.
The gap is long and strip-shaped, is positioned at the middle position of the two rectangular grooves, is vertically arranged and parallel to the radiation edge, and is symmetrical about the center point of the dielectric substrate.
The preferred dimensions of the various parts in this example 1 are as follows:
The antenna radiating patch length l=90 mm (0.84λ 0), width w=101 mm (0.94λ 0), the dimensions of the two rectangular slots being equal, length l=30 mm (0.28λ 0), width w=33 mm (0.3λ 0), center slot length L 0＝33mm(0.3λ0), width W 0＝1mm(0.009λ0), distance d=1 mm (0.009 λ 0) between the edges of the two rectangular parasitic patches and the radiating patch loading the rectangular slots.
The reflection coefficient curves and the directional diagrams of the high-order mode microstrip antenna designed by using the preferred size parameters of the embodiment are shown in fig. 3 (a), fig. 4 (a), fig. 5 (a) and fig. 6 (a), the maximum value of the antenna gain is more than 11dBi, the SLL of the antenna is less than-26 dB, compared with the traditional high-order mode microstrip antenna, the SLL of the antenna is reduced by more than 23dB, the reflection coefficient is lower than-10 dB at 2.79 GHz-2.86 GHz.
Note that a Side-lobe level (SLL), which is defined as a relative value of the ratio of the maximum Side lobe level to the main lobe level in the antenna radiation pattern, is smaller, and indicates that the radiation energy radiates less in the Side lobe direction. In general, the main lobe direction of the antenna radiation pattern, i.e. the direction of our signal emission target, and thus, the smaller the relative level of the side lobes, the smaller the energy loss radiated to non-target areas.
Example 2
As shown in fig. 2, this embodiment 2 is different from embodiment 1 in that:
In embodiment 2, the higher-order mode microstrip antenna is a circular antenna, and the shapes of the slot, the parasitic patch and the antenna radiation patch are preferably circular.
Specifically, two circular grooves are formed in the antenna radiation patch, the two circular grooves are arranged symmetrically up and down, the two circular grooves are provided with openings, and the openings are coincident with the edges of the antenna radiation patch.
Each circular groove is internally provided with a circular parasitic patch.
The preferred dimensions of the circular microstrip patch antenna in this embodiment are:
Antenna radiating patch radius R p＝50mm(0.44λ0), two circular slot radii equal, both R s＝16.5mm(0.14λ0), center slot length l 0＝35mm(0.3λ0), width w 0＝1mm(0.009λ0), distance d=1 mm between the edge of the two circular parasitic patches and the radiating patch loading the circular slot (0.009 λ 0).
The reflection coefficient curves and the directional diagrams of the high-order mode microstrip antenna designed by using the preferred size parameters in embodiment 2 are as shown in fig. 3 (b), fig. 4 (b), fig. 5 (b) and fig. 6 (b), the maximum value of the antenna gain is more than 11dBi, the SLL of the antenna is less than-26 dB, the SLL is more than 23dB lower than that of the conventional high-order mode microstrip antenna, and the reflection coefficient S11 of the antenna is lower than-10 dB between 2.62GHz and 2.65 GHz.
Example 3
The production processes of example 1 and example 2 are substantially the same, and example 3 will be described by taking example 1 as an example.
S1, selecting a dielectric substrate, and determining the material and the relative dielectric constant of the substrate. The dielectric substrate can be various dielectric substrates commonly used in the market, in this example, the material of the dielectric substrate is Rogers duroid 5880, the relative dielectric constant is 2.20, and the thickness of the substrate is 1.575mm.
S2, acquiring the size parameters of the antenna patch and the substrate and the setting position of the coaxial feed probe according to the antenna principle, wherein in the embodiment, the initial value of the length and the width of the antenna patch can be acquired through a formula according to the material and the thickness of the substrate and the working frequency of the antenna, the width of the substrate is at least greater than the initial value of the width of the antenna patch which is 2 times, and the length of the substrate is at least greater than the initial value of the length of the antenna patch which is 2 times. In addition, in this embodiment, the antenna is fed by a coaxial feed mode, and the position of the coaxial feed probe is moved according to the simulation impedance matching result, wherein the size of the coaxial feed probe is selected according to international standards, and the impedance is 50Ω.
S3, determining slotting parameters by representing reflection coefficients and an E-plane directional diagram, in this example, the relation between the width and the length of the two rectangular grooves, the distance between the two rectangular grooves and the radiating edge, the width and the length of the gap, the reflection coefficient and the E-plane directional diagram is represented respectively, and the grooving parameters are obtained.
S4, two rectangular grooves and a central gap are formed in the antenna patch according to the slotting parameters.
S5, determining parasitic patch parameters by representing the reflection coefficient and the E-plane directional diagram, and in the embodiment, representing the length and the width of two parasitic patches and the relation between the distance between the two parasitic patches and the antenna radiation patch, the reflection coefficient and the E-plane directional diagram respectively to obtain the parasitic patch parameters.
S6, parasitic patches are respectively arranged in the two rectangular grooves according to the parasitic patch parameters.
In summary, the high-gain microstrip antenna with sidelobe suppression and the design method thereof provided by the invention have good design effect, the antenna works in a higher-order resonance mode, and the current distribution in the higher-order resonance mode of the antenna can be regulated and controlled by loading the slot, the slot and the parasitic structure on the proper position of the patch, so that the far-field radiation of the antenna is regulated and controlled, and good sidelobe suppression level and higher-direction gain are obtained on the premise of keeping the advantages of low profile and simple structure.
The present embodiment also provides a communication device including the high-gain microstrip antenna with high sidelobe suppression as described in embodiments 1 and 2.
The embodiments described above are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the embodiments described above, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principles of the present invention should be made in the equivalent manner, and are included in the scope of the present invention.
Claims (8)
1. The high-gain microstrip antenna with high sidelobe suppression is characterized by comprising a dielectric substrate, wherein one surface of the dielectric substrate is provided with an antenna radiation patch, the antenna radiation patch adopts coaxial feed, the antenna radiation patch is provided with two grooves and a slot, and a parasitic patch is arranged in each groove;
By the synergistic effect of the two grooves and the slots, the out-phase current of the microstrip antenna working in the higher-order mode flows around the antenna radiation patch, the out-phase current is eliminated, and the side lobe level of the antenna is reduced;
the parasitic patch is loaded in the groove, and the surface current excited by the coupling of the parasitic patch is completely in phase with the current at the two sides of the antenna radiation patch, so that the suppression level of side lobes is further enhanced while the microstrip antenna keeps a higher-order mode;
The two grooves are vertically symmetrically arranged about the center point of the dielectric substrate, and one side of each groove is overlapped with the non-radiation side of the antenna radiation patch;
The gap is vertically arranged between the two grooves and symmetrically arranged about the center of the dielectric substrate.
2. The high gain microstrip antenna of claim 1, wherein said slot, antenna radiating patch, parasitic patch and dielectric substrate are the same shape.
3. The high gain microstrip antenna according to claim 1, wherein said two slots are equal in size.
4. The high gain microstrip antenna of claim 1, wherein said slot is elongated.
5. The high-gain microstrip antenna according to claim 4, wherein said slot has a length of 0.3λ 0 and a width of 0.009 λ 0, and λ 0 is a wavelength of a free space corresponding to an antenna frequency point.
6. The high-gain microstrip antenna according to claim 1, wherein,
When the high-gain microstrip antenna is a rectangular microstrip patch antenna, the slot is rectangular, the parasitic patch is rectangular, the length of the slot is 0.28lambada 0, the width is 0.3lambada 0, and the distance between the side length of the parasitic patch and the antenna radiation patch is 0.009 lambada 0;
When the high-gain microstrip antenna is a circular microstrip patch antenna, the slot is circular, the parasitic patch is circular, and the radius of the slot is 0.14λ 0, wherein λ 0 is the wavelength of the free space corresponding to the antenna frequency point.
7. The high gain microstrip antenna according to claim 1, wherein the size parameter of the parasitic patch is determined based on the characteristic reflection coefficient and the E-plane pattern.
8. A communication device comprising the high gain microstrip antenna of any one of claims 1-7.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105633569A (en) * | 2016-03-08 | 2016-06-01 | 电子科技大学 | LTCCC laminated wideband microstrip staggered triangle array antenna |
| CN105896091A (en) * | 2016-06-07 | 2016-08-24 | 桂林电子科技大学 | Miniaturized broadband high-gain circular polarized microstrip antenna |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN205692962U (en) * | 2016-06-07 | 2016-11-16 | 桂林电子科技大学 | Minimized wide-band high-gain circular polarization microstrip antenna |
| CN107425272B (en) * | 2017-07-18 | 2023-07-18 | 华南理工大学 | Filtering antenna array |
| CN210443669U (en) * | 2019-09-18 | 2020-05-01 | 湖南大学 | Hydrology monitoring radar flat-plate microstrip array antenna |
| CN114883799B (en) * | 2022-07-08 | 2022-10-25 | 深圳大学 | Broadband high-gain patch antenna with diversity directional diagram |
| CN115332775B (en) * | 2022-08-19 | 2024-04-19 | 电子科技大学 | Differential feed single-layer broadband patch antenna |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633569A (en) * | 2016-03-08 | 2016-06-01 | 电子科技大学 | LTCCC laminated wideband microstrip staggered triangle array antenna |
| CN105896091A (en) * | 2016-06-07 | 2016-08-24 | 桂林电子科技大学 | Miniaturized broadband high-gain circular polarized microstrip antenna |
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