CN117832305A - Silicon carbide irradiation detector embedded with trapezoid floating junction - Google Patents

Silicon carbide irradiation detector embedded with trapezoid floating junction Download PDF

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Publication number
CN117832305A
CN117832305A CN202410034665.8A CN202410034665A CN117832305A CN 117832305 A CN117832305 A CN 117832305A CN 202410034665 A CN202410034665 A CN 202410034665A CN 117832305 A CN117832305 A CN 117832305A
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trapezoid
doping
epitaxial layer
doping type
type epitaxial
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韩超
武岩松
钱驰文
郭永征
张玉明
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Xidian University
Wuhu Research Institute of Xidian University
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Xidian University
Wuhu Research Institute of Xidian University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
    • H01L31/03125—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • General Physics & Mathematics (AREA)
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Abstract

The invention relates to a silicon carbide irradiation detector with embedded trapezoid floating junction, comprising: the semiconductor device comprises a substrate layer, a first doping type epitaxial layer, a plurality of trapezoid floating junctions, a second doping type epitaxial layer, a first ohmic contact electrode and a second ohmic contact electrode; arranging the first ohmic contact electrode, the second doping type epitaxial layer, the first doping type epitaxial layer, the substrate layer and the second ohmic contact electrode from top to bottom, wherein the plurality of trapezoid floating junctions are trapezoid structures formed in the first doping type epitaxial layer in a doping mode through ion implantation, and the doping types of the plurality of trapezoid floating junctions are different from those of the first doping type epitaxial layer; the interval between every two of the plurality of trapezoid floating junctions is 2-10 mu m, and the included angle between the upper bottom edge of each trapezoid floating junction and the adjacent oblique edge is 22-90 degrees. The silicon carbide irradiation detector with the structure utilizes the plurality of trapezoid floating junctions to homogenize an internal electric field, reduces the working voltage required by full depletion of the floating junctions, improves the overall carrier collection efficiency, and improves the charge collection efficiency and the detection efficiency.

Description

Silicon carbide irradiation detector embedded with trapezoid floating junction
Technical Field
The invention relates to the technical field of microelectronics, in particular to a silicon carbide irradiation detector with a trapezoid floating junction embedded therein.
Background
With the development of microelectronic technology, semiconductor radiation detectors have been widely used in the fields of nuclear medicine, nuclear power plant detection, environmental monitoring, space particle detection, and the like. The silicon carbide irradiation detector has better application potential in the aspects of detecting and calibrating high-energy and high-dose irradiation particle trajectories and energy spectrums. Detectors designed according to conventional schottky or PiN (Positive-intrinsic negative) diodes have very strong surface and junction peak fields, which can present significant leakage noise risk to the detector. Meanwhile, the single i region design also causes the electric field distribution in the sensitive region to be uneven, which is unfavorable for the separation and collection of irradiation carriers.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a silicon carbide irradiation detector with embedded trapezoid floating junctions.
According to a first aspect of an embodiment of the present invention, there is provided a silicon carbide radiation detector having embedded trapezoidal floating junctions, comprising: the semiconductor device comprises a substrate layer, a first doping type epitaxial layer, a plurality of trapezoid floating junctions, a second doping type epitaxial layer, a first ohmic contact electrode and a second ohmic contact electrode;
the first ohmic contact electrode, the second doping type epitaxial layer, the first doping type epitaxial layer, the substrate layer and the second ohmic contact electrode are sequentially arranged from top to bottom;
the trapezoid floating junctions are trapezoid structures formed inside the first doping type epitaxial layer in a doping mode through ion implantation, and the ion doping types of the trapezoid floating junctions are different from those of the first doping type epitaxial layer; the first doping type epitaxial layer (2) comprises at least one layer of floating junction structure formed by a plurality of trapezoid floating junctions (3), the distance between every two of the trapezoid floating junctions in each layer of floating junction structure is 2-10 mu m, and the included angle between the upper bottom edge of each trapezoid floating junction and the adjacent bevel edge is 22-90 degrees.
Optionally, the substrate layer has a thickness of 20 μm, a width of 20 μm, and a doping concentration of 5×10 18 cm -3 ～8×10 18 cm -3 The doping type is N type, and the doping ions comprise nitrogen ions and phosphorus ions.
Optionally, the first doping type epitaxial layer is positioned on one side surface of the substrate layer, has a thickness of 20-100 μm, a width of 20 μm and a doping concentration of 1×10 14 cm -3 ～5×10 14 cm -3 The doping type is N type, and the doping ions comprise nitrogen ions and phosphorus ions.
Optionally, the width of the upper bottom edge of each of the plurality of trapezoid floating junctions is 3 μm to 9 μm, the thickness of each of the plurality of trapezoid floating junctions is 0.2 μm to 1.8 μm, and the doping concentration is 1×10 15 cm -3 ～1×10 17 cm -3 The doping type is P-type, and the doping ions comprise boron ions.
Optionally, the second doping type epitaxial layer is located on the other side surface of the first doping type epitaxial layer, the thickness of the second doping type epitaxial layer is 0.5-2 μm, the width is 20 μm, and the doping concentration is 5×10 18 cm -3 ～2×10 19 cm -3 The doping type is P type, and the doping ion is boron ion.
Optionally, the first ohmic contact electrode is located on the other side surface of the second doping type epitaxial layer; the material comprises one or more of Ni and Au, and has a thickness of 1 μm.
Optionally, the second ohmic contact electrode is located on the other side surface of the substrate layer; the material comprises one or more of Ni and Au, and the thickness is 1 μm.
Optionally, the plurality of trapezoid floating junctions (3) are longitudinally arranged inside the first doping type epitaxial layer (2) according to a multi-layer floating junction structure; the trapezoid floating junctions (3) are transversely distributed in each layer of floating junction structure; the spacing between every two multilayer floating junction structures is larger than or equal to 20 mu m.
The technical scheme provided by the embodiment of the invention can comprise the following beneficial effects:
in the above technical solution, the first ohmic contact electrode, the second doping type epitaxial layer, the first doping type epitaxial layer, the substrate layer and the second ohmic contact electrode are sequentially arranged from top to bottom, the plurality of trapezoid floating junctions are trapezoid structures formed in the first doping type epitaxial layer in a doping manner by ion implantation, and ion doping types of the plurality of trapezoid floating junctions are different from ion doping types of the first doping type epitaxial layer; the first doping type epitaxial layer comprises at least one layer of floating junction structure formed by a plurality of trapezoid floating junctions, the interval between every two of the trapezoid floating junctions in each layer of floating junction structure is 2-10 mu m, and the included angle between the upper bottom edge of each trapezoid floating junction and the adjacent oblique edge is 22-90 degrees. Through the technical scheme, the silicon carbide irradiation detector with the structure utilizes the plurality of trapezoid floating junctions to homogenize an electric field inside the detector and reduce the working voltage required by full depletion of the floating junctions, so that the overall carrier collection efficiency is improved, and the charge collection efficiency and the detection efficiency of the silicon carbide irradiation detector are improved.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention. In the drawings:
FIG. 1 is a schematic diagram of a silicon carbide radiation detector with embedded trapezoidal floating junctions, according to an exemplary embodiment.
FIG. 2 is a schematic diagram of a silicon carbide radiation detector with yet another embedded trapezoidal floating junction, according to an exemplary embodiment.
Description of the reference numerals
1. A substrate layer; 2. a first doping type epitaxial layer; 3. a plurality of trapezoidal floating junctions; 4. a second doping type epitaxial layer; 5. a first ohmic contact electrode; 6. and a second ohmic contact electrode.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. Rather, they are merely examples of apparatus and methods consistent with aspects of the invention as detailed in the accompanying claims.
In order to facilitate the understanding of the present invention, the related state of the art and the inventive concept of the present invention will be briefly described.
With the development of microelectronic technology, semiconductor radiation detectors have been widely used in the fields of nuclear medicine, nuclear power plant detection, environmental monitoring, space particle detection, and the like. Compared with the traditional silicon and germanium materials, the wide-bandgap semiconductor silicon carbide (SiC) material has the characteristics of large bandgap, high critical displacement energy, strong critical breakdown field, high thermal conductivity and the like, and the manufactured radiation detector overcomes the problem that the device performance of the traditional semiconductor device is reduced when the traditional semiconductor device works in severe environments such as high temperature, strong radiation and the like to a great extent.
The silicon carbide irradiation detector has better application potential in the aspects of detecting and calibrating high-energy and high-dose irradiation particle trajectories and energy spectrums. In the prior art, radiation detectors typically employ schottky diode or PiN (Positive-intrinsic Positive) diode structures as the detector body, where the volume of the sensitive region determines the detection efficiency. Under the premise of a certain detector area, in order to ensure the sufficient collection of irradiation generated carriers, the thickness of a sensitive area of the detector is required to be corresponding to the effective range of irradiation particles in the material, namely, for high-energy irradiation particles with larger energy deposition distance, a thicker sensitive area is required to be designed. To ensure that a larger depletion of the sensitive region is achieved with a smaller reverse bias voltage, the sensitive region doping concentration is typically lower.
However, for high-energy particle irradiation detection, a thick sensitive region requires a large reverse bias voltage to achieve depletion collection, which means that detectors designed based on conventional schottky or PiN diodes have a strong surface and junction peak electric field, which can bring the risk of leakage noise to the detector. Meanwhile, the single i-region design also ensures that the electric field distribution in the sensitive region of the traditional detector is uneven, which is not beneficial to the separation and collection of radiation generated carriers. Therefore, how to skillfully design the i-region structure of the detector, and reduce the intrinsic noise of the irradiation detector while realizing a larger sensitive region thickness by using a smaller reverse bias voltage becomes a problem to be solved. Therefore, the invention provides a silicon carbide irradiation detector embedded with a trapezoid floating junction, so as to solve the technical problem.
FIG. 1 is a schematic structural diagram of a silicon carbide radiation detector with embedded trapezoidal floating junctions, as shown in FIG. 1, according to an exemplary embodiment, comprising: the semiconductor device comprises a substrate layer (1), a first doping type epitaxial layer (2), a plurality of trapezoid floating junctions (3), a second doping type epitaxial layer (4), a first ohmic contact electrode (5) and a second ohmic contact electrode (6);
the first ohmic contact electrode (5), the second doping type epitaxial layer (4), the first doping type epitaxial layer (2), the substrate layer (1) and the second ohmic contact electrode (6) are sequentially arranged from top to bottom;
the trapezoid floating junctions (3) are trapezoid structures formed inside the first doping type epitaxial layer (2) in a doping mode through ion implantation, and the ion doping types of the trapezoid floating junctions (3) are different from those of the first doping type epitaxial layer (2); the first doping type epitaxial layer (2) comprises at least one layer of floating junction structure formed by the plurality of trapezoid floating junctions (3), the distance between every two of the trapezoid floating junctions (3) in each layer of floating junction structure is 2-10 mu m, and the included angle between the upper bottom edge of each trapezoid floating junction (3) and the adjacent oblique edge is 22-90 degrees.
It can be understood that each component of the silicon carbide irradiation detector with the embedded trapezoid floating junction is sequentially arranged from the first ohmic contact electrode (5), the second doping type epitaxial layer (4), the first doping type epitaxial layer (2), the substrate layer (1) and the second ohmic contact electrode (6) from top to bottom; when the silicon carbide irradiation detector with the embedded trapezoid floating junction is generated, the substrate layer (1), the first doping type epitaxial layer (2), the trapezoid floating junctions (3), the second doping type epitaxial layer (4), the first ohmic contact electrode (5) and the second ohmic contact electrode (6) are sequentially generated; wherein a plurality of trapezoidal floating junctions (3) are generated with the first doping type epitaxial layer (2). For example, when it is required to generate the first doping type epitaxial layer (2) of 100 μm, it is possible to set a plurality of trapezoid floating junctions (3) to be generated from a position 30 μm away from the upper surface of the substrate layer (1), and then the plurality of trapezoid floating junctions (3) are generated with the generation of the first doping type epitaxial layer (2) according to the set condition.
It should be noted that the plurality of trapezoid floating junctions (3) are trapezoid structures formed in the first doping type epitaxial layer (2) in a manner of doping by ion implantation, the upper bottom edges of the plurality of trapezoid floating junctions (3) are located at the lower bottom edges, the included angle ranges between the upper bottom edges of the plurality of trapezoid floating junctions (3) in the same first doping type epitaxial layer (2) and adjacent oblique sides may be different, and the interval between every two adjacent trapezoid floating junctions (3) may also be different; and the ion doping type of the trapezoid floating junctions (3) is different from that of the first doping type epitaxial layer (2).
Alternatively, the substrate layer has a thickness of 20 μm, a width of 20 μm, and a doping concentration of 5×10 18 cm -3 ～8×10 18 cm -3 The doping type is N type, and the doping ions comprise nitrogen ions and phosphorus ions.
Optionally, the first doping type epitaxial layer is located on one side surface of the substrate layer, has a thickness of 20-100 μm, a width of 20 μm, and a doping concentration of 1×10 14 cm -3 ～5×10 14 cm -3 The doping type is N type, and the doping ions comprise nitrogen ions andand (3) phosphorus ions.
Alternatively, the width of the upper bottom edge of each of the plurality of trapezoid floating junctions is 3 μm to 9 μm, the thickness of each of the plurality of trapezoid floating junctions is 0.2 μm to 1.8 μm, and the doping concentration is 1×10 15 cm -3 ～1×10 17 cm -3 The doping type is P-type, and the doping ions comprise boron ions.
Optionally, the second doping type epitaxial layer is positioned on the other side surface of the first doping type epitaxial layer, the thickness of the second doping type epitaxial layer is 0.5-2 μm, the width is 20 μm, and the doping concentration is 5×10 18 cm -3 ～2×10 19 cm -3 The doping type is P type, and the doping ion is boron ion.
Optionally, the first ohmic contact electrode is located on the other side surface of the second doping type epitaxial layer; the material comprises one or more of Ni and Au, and has a thickness of 1 μm.
Optionally, the second ohmic contact electrode is located on the other side surface of the substrate layer; the material comprises one or more of Ni and Au, and the thickness is 1 μm.
Optionally, the plurality of trapezoid floating junctions (3) are longitudinally arranged inside the first doping type epitaxial layer (2) according to a multi-layer floating junction structure; a plurality of trapezoid floating junctions (3) are transversely distributed in each layer of floating junction structure; the spacing between every two multilayer floating junction structures is larger than or equal to 20 mu m.
The structure of the multi-layer floating junction structure inside the first doping type epitaxial layer (2) is longitudinally arranged, and a plurality of trapezoid floating junctions (3) are transversely arranged in each layer of floating junction structure, as shown in fig. 1.
In one embodiment, when detecting 14MeV in a first doping type epitaxial layer (2) with a thickness of 100 μm, the incorporation of 1 layer of prior art rectangular floating junction at 50 μm thickness of the first doping type epitaxial layer (2) enables the radiation detector to operate at 36% lower voltage while achieving 100% charge collection rate. After the angle of the edge angle of the upper surface of the rectangular floating junction is set to be 60 degrees, the rectangular floating junction is changed into a trapezoid floating junction with the upper bottom edge and the adjacent oblique edges being 60 degrees, and the working voltage required by the total depletion inside the changed trapezoid floating junction is reduced, so that the working voltage of the irradiation detector is reduced by 13 percent compared with the working voltage of the irradiation detector embedded in the rectangular floating junction when the charge collection efficiency reaches 100 percent, and is reduced by 43 percent compared with the working voltage of the irradiation detector without the floating junction. And, the number of layers of the plurality of trapezoid floating junctions (3) in the first doping type epitaxial layer (2) is related to the thickness of the first doping type epitaxial layer (2), for example, when detecting 14MeV medium in the thickness of the first doping type epitaxial layer (2) of 100 μm, 1-6 layers of the plurality of trapezoid floating junctions (3) can be built in the first doping type epitaxial layer (2), and the detection efficiency increases with the increase of the number of layers of the plurality of trapezoid floating junctions (3) under the same working voltage.
It should be noted that, since the thickness, the width of the upper bottom edge and the spacing between the trapezoid floating junctions (3) may be different, the number of layers in the floating junction structure may be determined according to practical situations. In general, only one layer of floating junction structure can be arranged in the first doping type epitaxial layer (2) with the thickness of less than 20-25 mu m, so that higher detection efficiency can be achieved and the cost can be saved; more than one layer of floating junction structure can be arranged in the first doping type epitaxial layer (2) with the thickness of more than 20-25 mu m, and the more the floating junction structures are, the higher the detection efficiency is; furthermore, based on a single-layer floating junction structure, the plurality of trapezoid floating junctions (3) are placed in the first doping type epitaxial layer (2) to achieve the best internal intermediate effect; however, in the case of a larger thickness of the first doping type epitaxial layer (2), a plurality of floating junction structures may be provided, the position and the number of layers of each floating junction structure are determined according to the thickness of the first doping type epitaxial layer (2), and the smaller the junction edge angle of the plurality of trapezoid floating junctions (3) closer to the substrate layer (1) is in the range of 22 ° to 90 °, the better the charge collection efficiency is, and the higher the detection efficiency is.
In one implementation, fig. 2 is a schematic structural diagram of a silicon carbide radiation detector with embedded trapezoidal floating junctions according to another exemplary embodiment, and as shown in fig. 2, the radiation detector device based on the trapezoidal floating junctions according to this embodiment is verified by using Sentaurus TCAD software. The method comprisesThe device comprises: a substrate layer (1), the thickness of the substrate layer (1) is 20 mu m, the width of the substrate layer (1) is 20 mu m, the doping type is N type, and the doping concentration is 5 multiplied by 10 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the A first doping type epitaxial layer (2), the thickness of the first doping type epitaxial layer (2) is 99.5 mu m, the width of the first doping type epitaxial layer (2) is 20 mu m, the doping type is N type, and the doping concentration is 3 multiplied by 10 14 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the P-type doping is carried out on the first doping type epitaxial layer (2) at the position of 50 mu m of the first doping type epitaxial layer (2) to form a layer of floating junction structure, 2 trapezoid floating junctions (3) are transversely distributed on the layer of floating junction structure, the doping width of the upper surface of each trapezoid floating junction (3) is 5 mu m, the included angle between the upper bottom edge and the adjacent bevel edge is 60 degrees, the doping width of the lower surface is 3.84 mu m, the thickness is 1 mu m, and the doping concentration is 1.95 multiplied by 10 16 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the second doping type epitaxial layer (4) is 0.5 mu m, the width of the second doping type epitaxial layer (4) is 20 mu m, the doping type is P type, and the doping concentration is 1.05X10 19 cm -3 . The first ohmic contact electrode (5) is made of Ni material and is positioned above the second doping type epitaxial layer (4) and has the thickness of 0.2-1 mu m; the second ohmic contact electrode (6) is made of Ni material and is positioned below the substrate layer (1) and has a thickness of 0.2-1 mu m.
According to the technical scheme, under the condition that the working voltage of the detector is unchanged, compared with a traditional structure, the built-in trapezoidal floating junction enables an electric field in the first doping type epitaxial layer to be distributed in a multimodal mode, and a floating junction technology is introduced into a proper position of the first doping type epitaxial layer of the irradiation detector, so that the electric field in the detector can be homogenized, and the overall carrier collection efficiency is improved. More importantly, the floating junction is arranged to be of a trapezoid structure, and the included angle range between the upper bottom edge of the trapezoid floating junction and the adjacent oblique edge is designed, so that the irradiation detector can realize the condition that the floating junction is completely exhausted in a low-voltage environment, and the loss of charge collection efficiency caused by the fact that the inside of a conventional rectangular floating junction is difficult to be completely exhausted is avoided. Meanwhile, the multi-layer trapezoid floating junction is arranged in the first doping type epitaxial layer of the radiation detector, so that the larger sensitive area volume is realized in a low-voltage environment, and meanwhile, the loss of charge collection efficiency caused by the fact that the floating junction is difficult to fully deplete is reduced. Therefore, compared with the conventional irradiation detector structure, the charge collection efficiency is greatly improved, and the device reliability and the detection efficiency are enhanced.
The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the scope of the technical concept of the present invention, and all the simple modifications belong to the protection scope of the present invention.
In addition, the specific features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various possible combinations are not described further.
Moreover, any combination of the various embodiments of the invention can be made without departing from the spirit of the invention, which should also be considered as disclosed herein.

Claims (8)

1. A silicon carbide irradiation detector with embedded trapezoidal floating junctions, comprising: the semiconductor device comprises a substrate layer (1), a first doping type epitaxial layer (2), a plurality of trapezoid floating junctions (3), a second doping type epitaxial layer (4), a first ohmic contact electrode (5) and a second ohmic contact electrode (6);
the first ohmic contact electrode (5), the second doping type epitaxial layer (4), the first doping type epitaxial layer (2), the substrate layer (1) and the second ohmic contact electrode (6) are sequentially arranged from top to bottom;
the trapezoid floating junctions (3) are trapezoid structures formed inside the first doping type epitaxial layer (2) in a doping mode through ion implantation, and the ion doping types of the trapezoid floating junctions (3) are different from those of the first doping type epitaxial layer (2); the first doping type epitaxial layer (2) comprises at least one layer of floating junction structure formed by the plurality of trapezoid floating junctions (3), the distance between every two of the trapezoid floating junctions (3) in each layer of floating junction structure is 2-10 mu m, and the included angle between the upper bottom edge of each trapezoid floating junction (3) and the adjacent bevel edge is 22-90 degrees.
2. The embedded trapezoidal floating junction silicon carbide irradiation detector according to claim 1, wherein the substrate layer (1) has a thickness of 20 μm, a width of 20 μm, and a doping concentration of 5 x 10 18 cm -3 ～8×10 18 cm -3 The doping type is N type, and the doping ions comprise nitrogen ions and phosphorus ions.
3. The embedded trapezoidal floating junction silicon carbide irradiation detector according to claim 1, wherein the first doping type epitaxial layer (2) is located on one side surface of the substrate layer (1), has a thickness of 20-100 μm, a width of 20 μm, and a doping concentration of 1 x 10 14 cm -3 ～5×10 14 cm -3 The doping type is N type, and the doping ions comprise nitrogen ions and phosphorus ions.
4. The embedded trapezoidal floating junction silicon carbide irradiation detector as claimed in claim 1, wherein each of the plurality of trapezoidal floating junctions (3) has a width of upper base of 3 μm to 9 μm, each of the plurality of trapezoidal floating junctions (3) has a thickness of 0.2 μm to 1.8 μm, and a doping concentration of 1 x 10 15 cm -3 ～1×10 17 cm -3 The doping type is P-type, and the doping ions comprise boron ions.
5. The embedded trapezoidal floating junction silicon carbide irradiation detector according to claim 1, wherein the second doping type epitaxial layer (4) is located on the other side surface of the first doping type epitaxial layer (2), the second doping type epitaxial layer (4) has a thickness of 0.5 μm to 2 μm, a width of 20 μm, and a doping concentration of 5×10 18 cm -3 ～2×10 19 cm -3 The doping type is P type, and the doping ion is boron ion.
6. The embedded trapezoidal floating junction silicon carbide irradiation detector according to claim 1, wherein the first ohmic contact electrode (5) is located on the other side surface of the second doping type epitaxial layer (4); the material comprises one or more of Ni and Au, and has a thickness of 1 μm.
7. A silicon carbide irradiation detector with embedded trapezoidal floating junction according to claim 1, characterized in that the second ohmic contact electrode (6) is located on the other side surface of the substrate layer (1); the material comprises one or more of Ni and Au, and the thickness is 1 μm.
8. The embedded trapezoidal floating junction silicon carbide irradiation detector according to claim 1, wherein the plurality of trapezoidal floating junctions (3) are longitudinally arranged inside the first doping type epitaxial layer (2) in a multi-layer floating junction structure; the trapezoid floating junctions (3) are transversely distributed in each layer of floating junction structure; the spacing between every two multilayer floating junction structures is larger than or equal to 20 mu m.
CN202410034665.8A 2024-01-09 2024-01-09 Silicon carbide irradiation detector embedded with trapezoid floating junction Pending CN117832305A (en)

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