CN117766465A - 具有经烧蚀的模具化合物和挤出接触件的无引线集成电路 - Google Patents

具有经烧蚀的模具化合物和挤出接触件的无引线集成电路 Download PDF

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CN117766465A
CN117766465A CN202311198748.2A CN202311198748A CN117766465A CN 117766465 A CN117766465 A CN 117766465A CN 202311198748 A CN202311198748 A CN 202311198748A CN 117766465 A CN117766465 A CN 117766465A
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mold compound
leadframe
die
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L·M·A·克莱门特
J·C·莫利纳
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Texas Instruments Inc
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Abstract

本申请公开具有经烧蚀的模具化合物和挤出接触件的无引线集成电路。一种电子器件(100)包括引线框架(102)，该引线框架(102)包括管芯焊盘(110)和接触件(112)，其中管芯(104)附接到管芯焊盘(110)。键合线(106)从管芯(104)附接到接触件(112)，并且模具化合物(108)覆在引线框架(102)上并包封管芯(104)和键合线(106)。模具化合物(108)具有从模具化合物(108)的顶部延伸到接触件(112)的键合表面的成角度的侧表面(118)。接触件(112)从成角度的侧表面(118)延伸大约100μm至300μm的范围。

Description

具有经烧蚀的模具化合物和挤出接触件的无引线集成电路
技术领域
本公开涉及电子器件，并且更具体地涉及具有经烧蚀的模具化合物的无引线集成电路。
背景技术
无引线集成电路(IC)封装件(例如，四方扁平无引线、小外形无引线)包括引线框架、一个或多个管芯、键合线和模制化合物。无引线IC封装件可以经由冲压工艺或锯切工艺进行分割。冲压型无引线IC封装件往往与较低产量的产品相关联，而锯切型无引线IC封装件往往支持较高产量。然而，锯切型无引线IC封装件无法提供与冲压型无引线IC封装件相同的板级可靠性(BLR)。另一方面，冲压型无引线封装件需要多种尺寸的专用单模腔。
发明内容
在所描述的示例中，一种方法包括提供引线框架阵列以及将管芯放置在引线框架阵列的每个引线框架的管芯附接焊盘上。将键合线从管芯附接到引线框架阵列的每个引线框架的接触件的键合表面。将模具化合物放置在引线框架阵列上方，其中模具化合物包封管芯和键合线中的每一个。经由激光在相邻引线框架的相邻接触件之间对准的锯道中烧蚀模具化合物，并且分割引线框架阵列以形成电子器件封装件。
在另一个描述的示例中，一种制造无引线集成电路的方法包括提供引线框架阵列以及将管芯放置在引线框架阵列的每个引线框架的管芯附接焊盘上。将键合线从管芯附接到引线框架阵列的每个引线框架的接触件的键合表面。将模具化合物放置在引线框架阵列上方，其中模具化合物包封管芯和键合线中的每一个。经由激光在相邻引线框架的相邻接触件之间对准的锯道中烧蚀模具化合物，以形成模具化合物的成角度的侧表面，并且分割引线框架阵列以形成无引线集成电路。
在另一个描述的示例中，一种电子器件包括引线框架，该引线框架包括管芯焊盘和接触件，其中管芯附接到管芯焊盘。键合线从管芯附接到接触件，并且模具化合物覆在引线框架上并包封管芯和键合线。模具化合物具有从模具化合物的顶部延伸到接触件的键合表面的成角度的侧表面。接触件从成角度的侧表面延伸大约100μm至300μm的范围。
附图说明
图1是示例电子器件的横截面视图。
图2示出图1的电子器件的早期制造阶段中的衬底的横截面视图。
图3示出图2的电子器件在经历第一蚀刻工艺之后的横截面视图。
图4示出图3的电子器件在经历第二蚀刻工艺之后的横截面视图。
图5示出图4的电子器件在翻转或旋转180°并且将管芯附接材料放置在衬底的表面上之后的横截面视图。
图6示出图5的电子器件在将管芯放置在管芯附接材料上之后的横截面视图。
图7示出图6的电子器件在将键合线从管芯附接到衬底的表面之后的横截面视图。
图8示出图7的电子器件在将模具化合物形成在衬底、管芯和键合线上方之后的横截面视图。
图9示出图8的电子器件在经历对模具化合物的烧蚀之后的横截面视图。
图10示出图9的电子器件在经历分割(singulation)工艺之后的横截面视图。
图11示出示例电子器件的横截面视图。
具体实施方式
本文公开了一种电子器件，更具体地，公开了一种集成电路(IC)封装件以及制造该IC封装件的方法。该IC封装件是无引线封装件(例如，四方扁平无引线(QFN)、小外形无引线(SON))，其包括具有成角度的侧壁的模具化合物，类似于冲压QFN封装件。然而，该IC封装件并不是使用冲压QFN工艺制造的。相反，该方法包括用激光烧蚀模具化合物来创建成角度的侧壁。烧蚀模具化合物消除了对冲压QFN工艺中使用的多种尺寸的专用单模腔和分割工具的需要。因此，本公开通过在(通过激光封装锯，或者通过刀片分割)对引线框架执行最终分割之前对覆盖引线框架的锯道的模具化合物执行激光烧蚀而在图模(map molded)无引线IC封装件上创建类似冲压的外形。
此外，该IC封装件包括从模具化合物的成角度的侧壁延伸的挤出接触件，这在冲压QFN封装件中是不存在的。挤出接触件可以改善板级可靠性(BLR)，并且对于某些应用改善性能来说是期望的。通道或凹槽被限定在挤出接触件的附接表面上。这些通道有效地增加了接触件的焊接面积，从而进一步改善了BLR。
图1是包括引线框架102、管芯104、键合线106和模具化合物108的示例电子器件(例如，集成电路(IC)封装件)100的侧视图。电子器件100可以包括无引线IC封装件，包括但不限于四方扁平无引线(QFN)、小外形无引线(SON)等。
引线框架102包括管芯焊盘(热焊盘)110和接触件(端子焊盘)112。管芯104经由管芯附接材料114附接到管芯焊盘110。管芯焊盘110可以包括暴露在电子器件100的附接侧116上的热焊盘。该热焊盘创建从电子器件100到板(例如，印刷电路板)的有效热路径。此外，暴露的热焊盘或管芯焊盘110还能够实现到板的接地连接。
接触件112被暴露在附接表面116上和电子器件100的每一侧上。此外，接触件从模具化合物108的每个侧壁118延伸或被挤出一定距离D，从而形成挤出接触件，该距离D在100μm至300μm的范围内，其取决于IC封装件100的尺寸。通道或凹槽120被限定在每个接触件112的附接表面122中。如上所述，通道有效地增加了接触件112的焊接面积，从而进一步改善了BLR。
除了从模具化合物108挤出的接触件112的部分，模具化合物108覆盖引线框架102的除一个表面之外的所有表面，其中未被覆盖的一个表面背向电子设备100。模具化合物108还包封管芯104和键合线106。模具化合物具有通过下述激光烧蚀工艺形成的成角度的侧壁118。因此，电子器件100具有与冲压无引线IC封装件相同的配置，但是经由下述不同的制造工艺来制造。
图2至图11示出与图1中所示的无引线电子器件100的形成相关联的制造工艺200。虽然为了方便起见顺序地描绘，但是示出的动作中的至少一些可以被以不同的顺序执行和/或被并行执行。可替代地，一些实施方式可以仅执行所示动作中的一些。更进一步地，虽然图2-图11所示的示例是图示说明图1的示例配置的示例方法，但是其他方法和配置也是可能的。应当理解，虽然图2-图11所示的方法描绘了相邻IC封装件的制造工艺以图示说明模具化合物烧蚀工艺，但是该工艺适用于IC封装件阵列。因此，在制造IC封装件阵列之后，模具化合物被烧蚀并且阵列被分割以将IC封装件与阵列分离。
参照图2，制造工艺200开始于包括金属(例如，铜)层202的衬底。经由第一蚀刻工艺250蚀刻金属层202而形成开口204以形成引线框架206，从而得到图3的配置。图3中的配置图示说明了处于初始制造阶段的相邻IC封装件(例如，第一IC封装件IC1和第二IC封装件IC2)的一部分。每个IC封装件IC1、IC2的引线框架206包括管芯焊盘208和接触件(端子焊盘)210。图3中的配置经历第二蚀刻工艺255以在引线框架206的附接表面214中形成通道或凹槽212，从而得到图4中的配置。引线框架206被翻转180°，使得可以在与附接表面214相对的一侧上继续处理。此外，管芯附接材料216被放置在管芯焊盘208的表面上，从而得到图5中的配置。
对于每个IC封装件IC1、IC2，管芯218被放置在管芯焊盘208上的管芯附接材料216上。键合线220被附接到管芯218的表面以及与引线框架206的附接表面214相反的接触件210的表面222，从而得到图7中的配置。模具化合物224被形成在引线框架206上方并且覆盖引线框架206的除附接表面214以外的所有表面，从而得到图8中的配置。模具化合物224包封管芯218和键合线220。
图8中的配置经历烧蚀工艺260以去除模具化合物224在烧蚀路径226中的那一部分，由此在相邻IC封装件IC1、IC2之间形成间隙228，从而得到图9中的配置。以这样一种方式通过去除模具化合物224的激光来执行烧蚀工艺260，即形成模具化合物224的成角度的侧壁230。激光的参数(例如，频率、电流、脉冲持续时间(时间)、激光遍历的次数等)是基于待烧蚀的模具化合物224的厚度。例如，模具化合物224的厚度可以在0.55mm至1.50mm的范围内。因此，在该示例中，激光将烧蚀的模具化合物224的量在0.55mm至1.50mm的范围内。因此，对于具有在0.55mm至1.50mm的范围内的厚度的模具化合物，频率可以在15kHz至25kHz的范围内，电流可以在25A至30A的范围内，激光脉冲持续时间可以在100ns至200ns的范围内，并且遍历的次数可以在1-5的范围内。
图9中的配置经历分割工艺265以将IC封装件IC1、IC2彼此分离，从而得到图10的配置。通过刀片分割、锯分割或激光分割在锯道232中执行分割工艺265。图11示出在分割工艺265之后的最终IC封装件IC1或IC2。如上所述，接触件210从模具化合物224的每个成角度的侧壁230延伸或被挤出一定距离D，从而形成挤压接触件，该距离D在100μm至300μm的范围内。
以上描述的是本主题公开的示例。当然，不可能出于描述本公开的目的来描述部件或方法的每一种可想到的组合，但是本领域普通技术人员可以认识到本公开的许多进一步的组合和排列是可能的。因此，本公开旨在涵盖落入所附权利要求的精神和范围内的所有此类改变、修改和变化。此外，当本公开或权利要求记载“一”、“一个”、“第一”或“另一”元素或其等同物时，应将其解释为包括一个或多于一个这样的元素，既不要求也不排除两个或更多个这样的元素。此外，在具体实施方式或权利要求中使用术语“包括”的情况下，该术语旨在以类似于术语“包含”的方式是包容性的，如“包含”在权利要求中用作过渡词时所解释的那样。最后，术语“基于”被解释为意味着至少部分地基于。

Claims (20)

1.一种方法，其包括：
提供引线框架阵列；
将管芯放置在所述引线框架阵列的每个引线框架的管芯附接焊盘上；
将键合线从所述管芯附接到所述引线框架阵列的每个引线框架的接触件的键合表面；
放置模具化合物以覆在所述引线框架阵列上，所述模具化合物包封所述管芯和所述键合线中的每一个；
经由激光在相邻引线框架的相邻接触件之间对准的烧蚀路径中烧蚀所述模具化合物；以及
分割所述引线框架阵列以形成电子器件封装件。
2.根据权利要求1所述的方法，其中在将管芯放置在所述引线框架阵列的每个引线框架的所述管芯附接焊盘上之前，所述方法进一步包括执行第一蚀刻工艺以在所述引线框架阵列的每个引线框架中形成所述管芯附接焊盘和所述接触件。
3.根据权利要求2所述的方法，进一步包括执行第二蚀刻工艺以在每个所述接触件的附接表面中形成通道。
4.根据权利要求1所述的方法，其中烧蚀所述模具化合物形成所述模具化合物的成角度的侧表面，所述成角度的侧表面从所述模具化合物的第一表面延伸到每个所述接触件的所述键合表面。
5.根据权利要求4所述的方法，其中烧蚀所述模具化合物以形成所述成角度的侧表面形成挤出接触件，其中所述挤出接触件从所述模具化合物的所述成角度的侧表面延伸大约100μm至300μm的范围。
6.根据权利要求1所述的方法，其中经由激光在相邻引线框架的相邻接触件之间对准的烧蚀路径中烧蚀所述模具化合物包括将所述激光的频率设置为大约25-35kHz并且将电流设置为大约25-30A。
7.根据权利要求6所述的方法，其中所述激光烧蚀所述模具化合物达大约100-200ns的持续时间。
8.根据权利要求7所述的方法，其中所述激光将所述模具化合物烧蚀到大约0.55-1.50mm的深度。
9.一种制造无引线集成电路的方法，其包括：
提供引线框架阵列；
将管芯放置在所述引线框架阵列的每个引线框架的管芯附接焊盘上；
将键合线从所述管芯附接到所述引线框架阵列的每个引线框架的接触件的键合表面；
放置模具化合物以覆在所述引线框架阵列上，所述模具化合物包封所述管芯和所述键合线中的每一个；
经由激光在相邻引线框架的相邻接触件之间对准的烧蚀路径中烧蚀所述模具化合物，以形成所述模具化合物的成角度的侧表面；以及
分割所述引线框架阵列以形成所述无引线集成电路。
10.根据权利要求9所述的制造无引线集成电路的方法，其中在将管芯放置在所述引线框架阵列的每个引线框架的所述管芯附接焊盘上之前，所述方法进一步包括执行第一蚀刻工艺以在所述引线框架阵列的每个引线框架中形成所述管芯附接件焊盘和所述接触件。
11.根据权利要求10所述的制造无引线集成电路的方法，进一步包括执行第二蚀刻工艺以在所述接触件中的每一个的附接表面中形成通道。
12.根据权利要求9所述的制造无引线集成电路的方法，其中所述成角度的侧表面从所述模具化合物的第一表面延伸到每个所述接触件的键合表面。
13.根据权利要求12所述的制造无引线集成电路的方法，其中烧蚀所述模具化合物以形成所述成角度的侧表面形成挤出接触件，其中所述挤出接触件从所述模具化合物的所述成角度的侧表面延伸大约100μm至300μm的范围。
14.根据权利要求13所述的制造无引线集成电路的方法，其中所述无引线集成电路是四方扁平无引线集成电路或小外形无引线集成电路。
15.根据权利要求9所述的制造无引线集成电路的方法，其中经由激光在相邻引线框架的相邻接触件之间对准的烧蚀路径中烧蚀所述模具化合物包括将所述激光的频率设置为大约25-35kHz并且将电流设置为大约25-30A。
16.根据权利要求15所述的制造平坦无引线集成电路的方法，其中所述激光烧蚀所述模具化合物达大约100-200ns的持续时间。
17.根据权利要求16所述的制造无引线集成电路的方法，其中所述激光将所述模具化合物烧蚀到大约0.55-1.50mm的深度。
18.一种电子器件，其包括：
引线框架，其包括管芯焊盘和接触件；
管芯，其附接到所述管芯焊盘；
键合线，其从所述管芯附接到所述接触件；以及
模具化合物，其覆在所述引线框架上并包封所述管芯和键合线，所述模具化合物具有从所述模具化合物的顶部延伸到所述接触件的键合表面的成角度的侧表面，
其中所述接触件从所述成角度的侧表面延伸大约100μm至300μm的范围。
19.根据权利要求18所述的电子器件，其中在所述接触件的附接表面中限定至少一个通道。
20.根据权利要求18所述的电子器件，其中所述电子器件是四方扁平无引线集成电路或小外形无引线集成电路。
CN202311198748.2A 2022-09-23 2023-09-18 具有经烧蚀的模具化合物和挤出接触件的无引线集成电路 Pending CN117766465A (zh)

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