CN117766389A - Heterojunction bipolar transistor and MOCVD epitaxial growth method thereof - Google Patents
Heterojunction bipolar transistor and MOCVD epitaxial growth method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title 1
- 230000007704 transition Effects 0.000 claims abstract description 52
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000002360 preparation method Methods 0.000 claims abstract description 25
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 86
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 56
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 22
- 230000007797 corrosion Effects 0.000 claims description 21
- 238000005260 corrosion Methods 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 20
- 239000012895 dilution Substances 0.000 claims description 7
- 238000010790 dilution Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 22
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 12
- 230000006911 nucleation Effects 0.000 description 9
- 238000010899 nucleation Methods 0.000 description 9
- 239000005922 Phosphane Substances 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 7
- 229910000064 phosphane Inorganic materials 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
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- 239000002772 conduction electron Substances 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Abstract
The invention belongs to the technical field of heterojunction bipolar transistors, and particularly relates to a heterojunction bipolar transistor and an epitaxial preparation method thereof. According to the invention, a transition layer is arranged between the collector region and the base region, and a P-type doped InGaAs transition film layer is grown on the surface of the collector region by adopting a pulse metal organic chemical vapor deposition method. The invention adopts a pulse metal organic chemical vapor deposition method to obtain the P-type doped InGaAs film layer, and adopts a reaction source gas intermittent feeding mode in the pulse growth method, so that the defect density of the semiconductor epitaxial layer can be obviously reduced; meanwhile, the crystal lattice of the transition layer is matched with that of the base region, the base region material obtained on the transition layer is good in quality, the components and doping of the base region are not changed, and therefore the HBT epitaxial wafer with low sheet resistance, large gain and high cut-off frequency can be obtained. The invention does not change the growth mode of the original base region, and has low manufacturing cost.
Description
Technical Field
The invention belongs to the technical field of heterojunction bipolar transistors, and particularly relates to a heterojunction bipolar transistor and an epitaxial preparation method thereof.
Background
Heterojunction bipolar transistor (Heterojunction BipolarTransistor, HBT) is a bipolar transistor (BJT) that uses different semiconductor materials to form a Heterojunction between the emitter and base. HBTs have the advantage of high current gain and low base resistance. In addition, HBTs (hereinafter referred to as GaAs HBTs) prepared by epitaxially growing a compound semiconductor layer on a GaAs substrate have high electron mobility due to the material characteristics of the semiconductor layer itself, which is a great advantage in high frequency applications. For example, gaAs HBTs are commonly used for mobile phones, wiFi terminals, and their base stations, such as Radio Frequency (RF) power amplifiers and other Monolithic Microwave Integrated Circuits (MMICs), and the like. The performance of the GaAs HBT can be effectively improved by band gap engineering of the base, the emitter and/or the collector by using the strained semiconductor layer or the semiconductor layer with graded composition, for example, the base region and the emitter region are respectively made of InGaAs/InGaP, gaAsSb/InGaP, gaAsPBi/InGaP and other materials, and the conduction electron transfer time of the HBT can be reduced, so that the high-frequency performance of the HBT, such as high current gain cut-off frequency (ft), maximum oscillation frequency (fmax) and the like, is improved.
The sheet resistance and carrier concentration of the base layer of the HBT have great influence on the gain of the device, so how to grow the InGaAs material meeting the design requirements aiming at the conditions of high doping concentration of the base region of the GaAs/InGaAs/GaInP HBT transistor and lattice mismatch with the substrate in the epitaxial growth process of the InGaAs/InGaP HBT is a difficult point for preparing the high-performance HBT epitaxial wafer.
US20060081963A1 proposes a bipolar transistor with enhanced base transfer, in which the doping profile of the InGaAsN base region is adjusted, low doping is used in the portions near the emitter region and near the collector region, high doping is used in the middle of the base region, and the total carrier concentration of the base region is ensured to be unchanged. According to the method, the carrier mobility of the base region is improved by reducing the doping of part of the base region, so that the sheet resistance of the base region is reduced. However, since the epitaxial layers of the different C-doped InGaAsN base regions have different lattice constants, the growth method causes great difficulty for epitaxial growth and is not suitable for industrial application. Chinese patent CN106505100a proposes a heterojunction bipolar transistor, dividing the InGaAs base region into four segments, increasing the composition of each segment from bottom to top, so as to reduce the strain of mismatched InGaAs, and avoid dislocation formation due to stress relaxation when the growth thickness of InGaAs exceeds the critical thickness, thereby reducing carrier mobility. The method can obtain a high-quality base region, but reduces the In component of the base region, and reduces the high-frequency characteristic of the HBT device to a certain extent.
Disclosure of Invention
The invention aims to provide a heterojunction bipolar transistor and an epitaxial preparation method thereof. The epitaxial preparation method provided by the invention does not change the growth mode of the original base region, and has the advantages of short growth time and low manufacturing cost.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides an epitaxial preparation method of a heterojunction bipolar transistor, which comprises a substrate 01, a buffer layer 02, a collector ohmic contact layer 03, a collector region corrosion barrier layer 04, a collector region 05, a base region 06, an emission layer 07, a secondary emission layer 08 and an emission region ohmic contact layer 09 which are sequentially arranged on the surface of the substrate 01;
the heterojunction bipolar transistor further comprises: a transition layer 05-1 provided between the collector region 05 and the base region 06; the material of the transition layer 05-1 is P-type doped InGaAs;
the epitaxial preparation method comprises the following steps of;
(1) Sequentially growing a buffer layer 02, a collector ohmic contact layer 03, a collector region corrosion barrier layer 04 and a collector region 05 on the surface of the substrate 01;
(2) And growing a transition layer 05-1 on the surface of the collector region 05, comprising the following steps: by AsH 3 Trimethyl indium and trimethyl gallium are used as reaction source gases, carbon tetrachloride is used as doping source gases, a pulse metal organic chemical vapor deposition method is adopted, P-type doped InGaAs grows on the surface of the collector region 05, and a transition layer 05-1 is obtained on the surface of the collector region 05; the pulse goldThe organic chemical vapor deposition method comprises multiple pulse periods with rectangular waveform, one pulse period T1+T2+T3+T4, and continuously introducing AsH 3 Trimethyl indium, trimethyl gallium and carbon tetrachloride are introduced in the time T1, and trimethyl indium, trimethyl gallium and carbon tetrachloride are not introduced in the time T2; introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T3, and not introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T4; t1 time < T3 time;
(3) And sequentially growing a base region 06, an emitter layer 07, a secondary emitter layer 08 and an emitter region ohmic contact layer 09 on the surface of the transition layer 05-1 to obtain the heterojunction bipolar transistor.
Preferably, the thickness of the transition layer 05-1 is 3-6 nm.
Preferably, the doping element of the P-type doped InGaAs is C, and the doping concentration is 1E 19-5E 19cm -3 。
Preferably, in step (2), the reaction chamber temperature is set to 500-520 ℃, the AsH 3 The flow is 400sccm, the trimethyl indium flow is 30sccm, the trimethyl gallium effective flow is 6sccm, and the carbon tetrachloride effective flow is 2.8sccm.
Preferably, the trimethylgallium is introduced into the reaction chamber using a double dilution line.
Preferably, the T1 time is set to 3s, the T2 time is set to 5s, the T3 time is set to 15s, and the T4 time is set to 1s.
Preferably, the pulse cycle is repeated 4 to 8 times.
Preferably, in step 1 and step 3, the growth methods of the buffer layer 02, the collector ohmic contact layer 03, the collector region corrosion barrier layer 04, the collector region 05, the base region 06, the emitter layer 07, the sub-emitter layer 08 and the emitter region ohmic contact layer 09 are metal organic chemical vapor deposition methods, and the temperature of the reaction chamber is independently set to 600-650 ℃ during growth.
The invention provides a heterojunction bipolar transistor obtained by the epitaxial preparation method, which comprises a substrate 01, a buffer layer 02, a collector ohmic contact layer 03, a collector region corrosion barrier layer 04, a collector region 05, a base region 06, an emitter layer 07, a secondary emitter layer 08 and an emitter region ohmic contact layer 09 which are sequentially arranged on the surface of the substrate 01;
the heterojunction bipolar transistor further comprises: a transition layer 05-1 provided between the collector region 05 and the base region 06; the material of the transition layer 05-1 is P-type doped InGaAs.
The invention provides an epitaxial preparation method of a heterojunction bipolar transistor, which comprises a substrate 01, a buffer layer 02, a collector ohmic contact layer 03, a collector region corrosion barrier layer 04, a collector region 05, a base region 06, an emission layer 07, a secondary emission layer 08 and an emission region ohmic contact layer 09 which are sequentially arranged on the surface of the substrate 01; the heterojunction bipolar transistor further comprises: a transition layer 05-1 provided between the collector region 05 and the base region 06; the material of the transition layer 05-1 is P-type doped InGaAs; the epitaxial preparation method comprises the following steps of; (1) Sequentially growing a buffer layer 02, a collector ohmic contact layer 03, a collector region corrosion barrier layer 04 and a collector region 05 on the surface of the substrate 01; (2) And growing a transition layer 05-1 on the surface of the collector region 05, comprising the following steps: by AsH 3 Trimethyl indium, trimethyl gallium and carbon tetrachloride are used as reaction source gases, a pulse metal organic chemical vapor deposition method is adopted, P-doped InGaAs grows on the surface of the collector region 05, and a transition layer 05-1 is obtained on the surface of the collector region 05; the pulse metal organic chemical vapor deposition method comprises a plurality of pulse periods, wherein the waveforms of the pulse periods are rectangular waves, and AsH is continuously introduced into one pulse period T1+T2+T3+T4 3 Trimethyl indium, trimethyl gallium and carbon tetrachloride are introduced in the time T1, and trimethyl indium, trimethyl gallium and carbon tetrachloride are not introduced in the time T2; introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T3, and not introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T4; t1 time < T3 time; (3) And sequentially growing a base region 06, an emitter layer 07, a secondary emitter layer 08 and an emitter region ohmic contact layer 09 on the surface of the transition layer 05-1 to obtain the heterojunction bipolar transistor. The invention arranges a transition layer 05-1 between the collector region 05 and the base region 06, the transition layer 05-1 adopts a pulse metal organic chemical vapor deposition methodThe method comprises the steps of obtaining a P-type doped InGaAs film layer, performing a nucleation process and a growth process of the P-type doped InGaAs film layer at intervals by adopting a reaction source gas intermittent feeding mode, forming a very thin InGaAs nucleation layer on the surface of a collector region 05 and enabling the InGaAs nucleation layer to form a stable state, reducing stacking faults and vacancies, and then growing a P-type doped InGaAs epitaxial layer (a transition layer 05-1) with a certain thickness on the basis of the InGaAs nucleation layer, so that the defect density of a semiconductor epitaxial layer can be remarkably reduced; meanwhile, the material of the transition layer 05-1 is a P-type doped InGaAs film layer, so that a highly doped InGaAs base region grows on the transition layer 05-1, the lattice of the transition layer 05-1 can be matched with that of the base region, the base region material quality is good, the In component and doping of the base region are not changed, and therefore the HBT epitaxial wafer with low sheet resistance, large gain and high cut-off frequency can be obtained.
And the preparation method of the transition layer 05-1 also adopts a Metal Organic Chemical Vapor Deposition (MOCVD), is the same as the preparation method of other layer structures of the heterojunction bipolar transistor, does not change the growth mode of the original base region, and has low manufacturing cost.
Further, in the present invention, the reaction chamber temperature is 500 to 520 ℃, the AsH 3 The flow rate is 400sccm, the trimethyl indium flow rate is 30sccm, the trimethyl gallium flow rate is 6sccm, and the carbon tetrachloride flow rate is 2.8sccm. The invention controls the temperature of the reaction chamber to be 500-520 ℃ to realize low-temperature pulse deposition; the invention regulates and controls AsH 3 The high partial pressure ratio (400 sccm) is beneficial to accelerating the mobility of surface atoms in the growth process, so that the atoms reach the stable state of the lowest energy point more quickly; simultaneously, the flow of trimethyl indium and trimethyl gallium is regulated and controlled, the growth rate of InGaAs is controlled to be 0.042nm/s, and the defect density of an InGaAs film layer can be obviously reduced, so that the lattice of the obtained transition layer 05-1 is matched with that of a base region, simultaneously, the flow of carbon tetrachloride is regulated and controlled, the obtained highly doped InGaAs base region is good In quality, the In component and doping of the base region are not changed, and the HBT epitaxial wafer with low sheet resistance, large gain and high cut-off frequency can be obtained.
Further, in the present invention, the T1 time is set to 3s, the T2 time is set to 5s, the T3 time is set to 15s, and the T4 time is set to 1s. The pulse cycle is repeated 4-8 times. The invention controls the pulse switching time of trimethyl indium, trimethyl gallium and carbon tetrachloride in the pulse period, and the pulse airflow is adopted for growth, and each cycle takes 24 seconds, and the growth thickness is about 0.75nm. And 5 cycles of growth, namely 120 seconds of growth, the transition layer 05-1 with the InGaAs epitaxial layer thickness of 3.75nm can be obtained, the lattice base region of the transition layer 05-1 is matched, the growth mode of the original base region is not changed, the growth time is short, and the manufacturing cost is low.
Drawings
Figure 1 is a schematic diagram of an HBT epitaxy structure provided by the present invention;
figure 2 is a schematic diagram of a low temperature pulse growth HBT transition layer in accordance with an embodiment of the present invention;
fig. 3 shows the results of an InGaAs base Fang Zufang resistance test, std=0.58%, obtained by growth in accordance with an embodiment of the present invention.
Detailed Description
The invention provides an epitaxial preparation method of a heterojunction bipolar transistor, which comprises a substrate 01, a buffer layer 02, a collector ohmic contact layer 03, a collector region corrosion barrier layer 04, a collector region 05, a base region 06, an emission layer 07, a secondary emission layer 08 and an emission region ohmic contact layer 09 which are sequentially arranged on the surface of the substrate 01;
the heterojunction bipolar transistor further comprises: a transition layer 05-1 provided between the collector region 05 and the base region 06; the material of the transition layer 05-1 is P-type doped InGaAs;
the epitaxial preparation method comprises the following steps of;
(1) Sequentially growing a buffer layer 02, a collector ohmic contact layer 03, a collector region corrosion barrier layer 04 and a collector region 05 on the surface of the substrate 01;
(2) And growing a transition layer 05-1 on the surface of the collector region 05, comprising the following steps: by AsH 3 Trimethyl indium and trimethyl gallium are used as reaction source gases, carbon tetrachloride is used as doping source gases, a pulse metal organic chemical vapor deposition method is adopted, P-type doped InGaAs grows on the surface of the collector region 05, and a transition layer 05-1 is obtained on the surface of the collector region 05; the pulse metallorganic chemical vapor deposition method comprises multiple stepsPulse periods, the waveform of which is rectangular, and AsH is continuously introduced in one pulse period T1+T2+T3+T4 3 Trimethyl indium, trimethyl gallium and carbon tetrachloride are introduced in the time T1, and trimethyl indium, trimethyl gallium and carbon tetrachloride are not introduced in the time T2; introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T3, and not introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T4; t1 time < T3 time;
(3) And sequentially growing a base region 06, an emitter layer 07, a secondary emitter layer 08 and an emitter region ohmic contact layer 09 on the surface of the transition layer 05-1 to obtain the heterojunction bipolar transistor.
In the present invention, all preparation materials/components are commercially available products well known to those skilled in the art unless specified otherwise.
The heterojunction bipolar transistor provided by the invention comprises a substrate 01, and a buffer layer 02, a collector ohmic contact layer 03, a collector region corrosion barrier layer 04, a collector region 05, a base region 06, an emitter layer 07, a sub-emitter layer 08 and an emitter region ohmic contact layer 09 which are sequentially arranged on the surface of the substrate 01. In the present invention, the material of the substrate 01 is GaAs. The resistivity of the substrate 01 is 1-4×10 8 Omega cm. The thickness of the substrate 01 is 675 μm. The material GaAs of the buffer layer 02 has doping element Si and doping concentration of 1E18cm -3 . The thickness of the buffer layer 02 is 100nm. The material GaAs of the collector ohmic contact layer 03 has a doping element Si and a doping concentration of 5E18cm -3 . The thickness of the collector ohmic contact layer 03 is 500nm. The material GaInP of the collector region corrosion barrier layer 04 is doped with Si, and the doping concentration is 5E18cm -3 . The thickness of the collector region corrosion barrier layer 04 is 10nm. The material GaAs of the collector region 05 has doping element Si and doping concentration of 0.5-5E 17cm -3 . The thickness of the collector region 05 is 1200nm. The thickness of the collector region corrosion barrier layer 04 is 10nm. Material In of the base region 06 0.06 GaAs with doping element of C and doping concentration of 4E19m -3 . The thickness of the base region 06 is 50nm. The material GaInP of the emitting layer 07 has doping element Si and doping concentration of 5E17m -3 . Thickness of the emission layer 07The degree was 20nm. The GaAs material of the secondary emission layer 08 has Si doping element and 5E18m doping concentration -3 . The thickness of the secondary emission layer 08 is 100nm. Material In of the emitter ohmic contact layer 09 0.5 GaAs with doping element Te and doping concentration of 2E19m -3 . The thickness of the emitter ohmic contact layer 09 is 100nm.
The heterojunction bipolar transistor provided by the invention further comprises: and a transition layer 05-1 arranged between the collector region 05 and the base region 06, wherein the material of the transition layer 05-1 is P-type doped InGaAs. The transition layer 05-1 is grown on the surface of the current collecting region 05 by adopting a pulse metal organic chemical vapor deposition method.
In the present invention, the thickness of the transition layer 05-1 is preferably 3 to 6nm, and particularly preferably 3.75nm. The doping element of the P-type doped InGaAs is preferably C, and the doping concentration of the P-type doped InGaAs is preferably 1E 19-5E 19cm -3 。
The epitaxial preparation method of the heterojunction bipolar transistor provided by the technical scheme of the invention further comprises the step of sequentially growing a buffer layer 02, a collector ohmic contact layer 03, a collector corrosion barrier layer 04 and a collector 05 on the surface of the substrate 01 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method before the growth of the transition layer 05-1. In the present invention, the growth of the buffer layer 02, the collector ohmic contact layer 03, the collector corrosion barrier layer 04, and the collector 05 is preferably performed in an MOCVD system (Aixtron Corp.) at a reaction chamber pressure of 100mbar and a growth temperature of 680℃at H 2 Is carrier gas, such as trimethylindium (TMIn), trimethylgallium (TMGa), trimethylaluminum (TMAL), and carbon tetrachloride (CCl) 4 ) Silane (SiH) 4 ) Trimethylarsine (TMAs), arsine (AsH) 3 ) And Phosphane (PH) 3 ) One or more of the above are reaction source gases, and a GaAs buffer layer 02, an ohmic contact layer 03 of an N-GaAs collector region, a corrosion barrier layer 04 of a GaInP collector region and a GaAs collector layer 05 are sequentially grown. The specific growth methods of the GaAs buffer layer 02, the N-GaAs collector region ohmic contact layer 03, the GaInP collector region corrosion barrier layer 04 and the GaAs collector layer 05 are not particularly required.
Obtaining the current collecting layer05, the invention uses AsH 3 Trimethyl indium and trimethyl gallium are used as reaction source gases, carbon tetrachloride is used as doping source gases, and a pulse metal organic chemical vapor deposition method is adopted to grow P-doped InGaAs on the surface of the collector region 05; the pulse metal organic chemical vapor deposition method comprises a plurality of pulse periods, wherein the waveforms of the pulse periods are rectangular waves, and AsH is continuously introduced into one pulse period T1+T2+T3+T4 3 Trimethyl indium, trimethyl gallium and carbon tetrachloride are introduced in the time T1, and trimethyl indium, trimethyl gallium and carbon tetrachloride are not introduced in the time T2; introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T3, and not introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T4; t1 time < T3 time. FIG. 2 is a schematic diagram of a preferred low temperature pulse growth method of the present invention for growing a transition layer 05-1 on the surface of a current collector layer 05. In the present invention, the reaction chamber temperature is preferably 500 to 520 ℃, more preferably 520 ℃, the AsH 3 The flow rate is preferably 400sccm, the trimethylindium flow rate is preferably 30sccm, the trimethylgallium flow rate is preferably 6sccm, and the carbon tetrachloride flow rate is preferably 2.8sccm. The trimethylgallium is introduced into the reaction chamber by adopting a double-dilution pipeline. In the present invention, the growth of the transition layer 05-1 is preferably performed in an MOCVD system (Aixtron corporation), TMGa is introduced into the reaction chamber in a double dilution line, the Source/Dilute/object flow rate of the MOCVD system is 30sccm/970sccm/200sccm, and the gas concentration introduced into the reaction chamber in the double dilution line is calculated by the formula 1:
wherein S is the gas flow rate actually introduced into the reaction chamber, F Source 、F Dilute 、F Inject Representing the flow rate of Source, dilute, injetct, respectively. Thus, the TMGa flow rate into the reaction chamber was 6sccm, and the growth rate of the InGaAs epitaxial layer was linear with the flow rates of In and Ga, calculated to be 0.042nm/s.
In the present invention, the T1 time setting is preferably 3s, the T2 time setting is preferably 5s, the T3 time setting is preferably 15s, and the T4 time setting is preferably 1s. The number of pulse cycle repetitions is preferably 4 to 8, more preferably 5.
After the transition layer 05-1 is obtained, the epitaxial preparation method of the heterojunction bipolar transistor provided by the technical scheme of the invention further comprises the step of growing a base region 06, an emission layer 07, a secondary emission layer 08 and an emission region ohmic contact layer 09 on the surface of the transition layer 05-1 to obtain the heterojunction bipolar transistor. The growth of the base region 06, emitter layer 07, sub-emitter layer 08 and emitter ohmic contact layer 09 is preferably carried out in an MOCVD system (Aixtron Corp.) with a reaction chamber pressure of 100mbar and a growth temperature of 680℃at H 2 Is carrier gas, such as trimethylindium (TMIn), trimethylgallium (TMGa), trimethylaluminum (TMAL), and carbon tetrachloride (CCl) 4 ) Silane (SiH) 4 ) Trimethylarsine (TMAs), arsine (AsH) 3 ) And Phosphane (PH) 3 ) One or more of which is a reaction source gas, a base region 06, an emitter layer 07, a sub-emitter layer 08 and an emitter ohmic contact layer 09 are grown in this order. The specific growth methods of the base region 06, the emitter layer 07, the auxiliary emitter layer 08 and the emitter ohmic contact layer 09 are not particularly required.
The technical solutions provided by the present invention are described in detail below in conjunction with examples for further illustrating the present invention, but they should not be construed as limiting the scope of the present invention.
Example 1
The schematic diagram of the HBT epitaxy structure provided in this embodiment is shown in fig. 1. Table 1 is a table of information of materials, thicknesses, doping elements, doping concentrations and corresponding actions of each layer of HBT epitaxial structure provided in this embodiment. A junction bipolar transistor was prepared according to the structure shown in fig. 1.
Table 1 HBT epitaxial structure information table provided in example 1
At a resistivity of 4x10 8 Omega cm GaAs as growth substrate is put into MOCVD system of Aixtron companyAnd (5) growing. The pressure in the reaction chamber was 100mbar, the growth temperature was 680℃and H 2 Is carrier gas, such as trimethylindium (TMIn), trimethylgallium (TMGa), trimethylaluminum (TMAL), and carbon tetrachloride (CCl) 4 ) Silane (SiH) 4 ) Trimethylarsine (TMAs), arsine (AsH) 3 ) And Phosphane (PH) 3 ) As a reaction source gas, trimethylgallium (TMGa) is continuously introduced as a source gas with Silane (SiH) 4 ) As a doping gas, TMGa Source flow was set to 100sccm, an N-GaAs buffer layer and an N-GaAs collector ohmic contact layer were grown, and then AsH was grown 3 Switching to pH 3 Then, trimethyl gallium (TMGa) and trimethyl indium (TMIn) are introduced to grow GaInP corrosion cut-off layer, the Source flow rate of TMGa is set to 15sccm, the Source flow rate of TMIn is set to 600sccm, and then PH is set 3 Switching to AsH 3 The GaAs collector region was grown and the Source flow rate of TMGa was set to 100sccm.
Then at 400sccm of AsH 3 Under the protection of gas, the reaction chamber is slowly cooled to 520 ℃, and then trimethylindium (TMIn), trimethylgallium (TMGa) and carbon tetrachloride (CCl) 4 ) InGaAs is slowly grown by pulse mode and is introduced into the MOCVD reaction chamber, wherein the Source flow of TMIn is set to 30sccm, CCl 4 The Source flow rate of (2.8 sccm) was set, TMGa was introduced into the reaction chamber through a double dilution line, and the Source/Dilute/object flow rates were 30sccm/970sccm/200sccm, respectively, and the gas concentration introduced into the reaction chamber through the double dilution line was calculated by the following equation 1:
wherein S is the gas flow rate actually introduced into the reaction chamber, F Source 、F Dilute 、F Inject Representing the flow rate of Source, dilute, injetct, respectively. Thus, the flow rate of TMGa into the reaction chamber was 6sccm, and the growth rate of the InGaAs epitaxial layer was linear with the flow rates of In and Ga, and it was calculated that the growth rate of InGaAs was 0.042nm/s.
FIG. 2 shows the temperature, gas pulse in-flow mode and growth time in a MOCVD reactorRelationship. Pulse on for t1=3 seconds, and feed TMGa, TMIn and CCl 4 Growing an InGaAs nucleation layer; pulse off for a period of t2=5 seconds, allowing enough time for the nucleation layer atoms to migrate to their energy nadir; pulse on for t3=15 seconds, and again feed TMGa, TMIn and CCl 4 Growing an epitaxial layer with a certain thickness; pulse off for t4=1 second time, forming a stable epitaxial layer. After time T4, the next cycle is entered. In the pulse growth method, asH is always protected 3 The high partial pressure ratio (400 sccm) of the surface atoms is beneficial to accelerating the mobility of the surface atoms in the growth process, so that the atoms reach the stable state of the lowest energy point more quickly. Introducing TMGa, TMIn and CCl in short pulse 4 Forming a very thin nucleation layer and stabilizing the nucleation layer to reduce stacking faults and vacancies, and then growing an epitaxial layer with a certain thickness on the basis of the nucleation layer, thereby remarkably reducing the defect density of the semiconductor epitaxial layer. With this pulsed gas flow growth, each cycle takes 24 seconds, with a growth thickness of about 0.75nm. After 5 cycles of growth, i.e. 120 seconds, the thickness of the InGaAs epitaxial layer is 3.75nm, the temperature of the reaction chamber is raised to 650 ℃, and the doping concentration of the growth reaches 5E19cm -3 And then growing an InGaP emitter region, a GaAs sub-emitter region and an InGaAs ohmic contact layer, namely forming a complete HBT epitaxial structure.
Fig. 3 shows the results of an InGaAs base Fang Zufang resistance test, std=0.58%, obtained by growth in accordance with an embodiment of the present invention.
As can be seen from fig. 3, the InGaAs base region obtained in this embodiment has low sheet resistance and good uniformity.
The embodiment shows that the HBT obtained by the method provided by the invention has low sheet resistance, large gain and high cut-off frequency. The reason is that: according to the invention, the low-temperature pulse is adopted to deposit the InGaAs lattice transition layer which is lattice matched with the base region, then the highly doped InGaAs base region is grown, the base region material quality is good, the In component and doping of the base region are not changed, and therefore, the HBT epitaxial wafer with low sheet resistance, large gain and high cut-off frequency can be obtained. Meanwhile, the method provided by the invention has low epitaxial cost. The reason is that: the method adopts low-temperature pulse to deposit the InGaAs lattice transition layer, takes only 120 seconds, does not change the growth mode of the original base region, and has short growth time and low manufacturing cost.
Although the foregoing embodiments have been described in some, but not all embodiments of the invention, other embodiments may be obtained according to the present embodiments without departing from the scope of the invention.
Claims (9)
1. The epitaxial preparation method of the heterojunction bipolar transistor is characterized in that the heterojunction bipolar transistor comprises a substrate (01), and a buffer layer (02), a collector ohmic contact layer (03), a collector region corrosion barrier layer (04), a collector region (05), a base region (06), an emitter layer (07), a secondary emitter layer (08) and an emitter region ohmic contact layer (09) are sequentially arranged on the surface of the substrate (01);
the heterojunction bipolar transistor further comprises: a transition layer (05-1) provided between the collector region (05) and the base region (06); the material of the transition layer (05-1) is P-type doped InGaAs;
the epitaxial preparation method comprises the following steps of;
(1) A buffer layer (02), a collector ohmic contact layer (03), a collector region corrosion barrier layer (04) and a collector region (05) are sequentially grown on the surface of the substrate (01);
(2) Growing a transition layer (05-1) on the surface of the collector region (05), comprising the following steps: by AsH 3 Trimethyl indium and trimethyl gallium are used as reaction source gases, carbon tetrachloride is used as doping source gases, a pulse metal organic chemical vapor deposition method is adopted to grow P-type doped InGaAs on the surface of a collector region (05), and a transition layer (05-1) is obtained on the surface of the collector region (05); the pulse metal organic chemical vapor deposition method comprises a plurality of pulse periods, wherein the waveforms of the pulse periods are rectangular waves, and AsH is continuously introduced into one pulse period T1+T2+T3+T4 3 Trimethyl indium, trimethyl gallium and carbon tetrachloride are introduced in the time T1, and trimethyl indium, trimethyl gallium and carbon tetrachloride are not introduced in the time T2; introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T3, and not introducing trimethyl indium, trimethyl gallium and carbon tetrachloride in the time T4; t1 time < T3 time;
(3) And sequentially growing a base region (06), an emitter layer (07), a secondary emitter layer (08) and an emitter region ohmic contact layer (09) on the surface of the transition layer (05-1) to obtain the heterojunction bipolar transistor.
2. Epitaxial preparation method according to claim 1, characterized in that the thickness of the transition layer (05-1) is 3-6 nm.
3. The epitaxial preparation method according to claim 1, wherein the doping element of the P-type doped InGaAs is C, and the doping concentration is 1E 19-5E 19cm -3 。
4. The epitaxial preparation method according to claim 1, wherein in the step (2), the reaction chamber temperature is set to 500 to 520 ℃, and the AsH is set to be equal to or higher than the temperature of the reaction chamber 3 The flow is 400sccm, the trimethyl indium flow is 30sccm, the trimethyl gallium effective flow is 6sccm, and the carbon tetrachloride effective flow is 2.8sccm.
5. The epitaxial preparation method according to claim 1, wherein the trimethylgallium is introduced into the reaction chamber using a double dilution line.
6. The epitaxial preparation method according to claim 1 or 4, wherein T1 time is set to 3s, T2 time is set to 5s, T3 time is set to 15s, and T4 time is set to 1s.
7. The method according to claim 1 or 4, wherein the pulse cycle is repeated 4 to 8 times.
8. The epitaxial preparation method according to claim 1, wherein in the step (1) and the step (3), the buffer layer (02), the collector ohmic contact layer (03), the collector corrosion barrier layer (04), the collector (05), the base region (06), the emitter layer (07), the sub-emitter layer (08) and the emitter ohmic contact layer (09) are grown by a metal organic chemical vapor deposition method, and the temperature of the reaction chamber is independently set to 600 to 650 ℃ during the growth.
9. The heterojunction bipolar transistor obtained by the epitaxial preparation method as claimed in any one of claims 1 to 8, characterized in that the heterojunction bipolar transistor comprises a substrate (01), a buffer layer (02), a collector ohmic contact layer (03), a collector corrosion barrier layer (04), a collector (05), a base (06), an emitter (07), a sub-emitter (08) and an emitter ohmic contact layer (09) which are sequentially arranged on the surface of the substrate (01);
the heterojunction bipolar transistor further comprises: a transition layer (05-1) provided between the collector region (05) and the base region (06); the material of the transition layer (05-1) is P-type doped InGaAs.
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