CN117747632A - 发光装置 - Google Patents
发光装置 Download PDFInfo
- Publication number
- CN117747632A CN117747632A CN202311783205.7A CN202311783205A CN117747632A CN 117747632 A CN117747632 A CN 117747632A CN 202311783205 A CN202311783205 A CN 202311783205A CN 117747632 A CN117747632 A CN 117747632A
- Authority
- CN
- China
- Prior art keywords
- light
- substrate
- light emitting
- emitting device
- limited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
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- 229910017052 cobalt Inorganic materials 0.000 description 2
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
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- 229910006404 SnO 2 Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
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- 229910052748 manganese Inorganic materials 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 239000012798 spherical particle Substances 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- OWOMRZKBDFBMHP-UHFFFAOYSA-N zinc antimony(3+) oxygen(2-) Chemical compound [O--].[Zn++].[Sb+3] OWOMRZKBDFBMHP-UHFFFAOYSA-N 0.000 description 1
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0003—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being doped with fluorescent agents
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
- G02F1/133723—Polyimide, polyamide-imide
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract
本发明提供了一种发光装置,所述发光装置包括一基板、多个第一光转换单元和一光源。所述多个第一光转换单元设置在所述光源上,而所述基板设置在所述多个第一光转换单元上。所述光源可发射一光线穿过所述多个第一光转换单元和所述基板以产生一第一光谱。所述第一光谱包括波长范围在520纳米到590纳米之间的一主波峰和波长范围在430纳米到470纳米之间的一第一子波峰,其中所述主波峰的强度大于所述第一子波峰的强度。
Description
本申请是申请日为2019年11月27日、申请号为201911185377.8、发明名称为“发光装置”的发明专利申请的分案申请。
技术领域
本发明涉及一种发光装置,特别是涉及一种包括光阻挡结构的发光装置。
背景技术
在传统的发光装置中,通常使用入射光激发光转换材料(例如量子点),且入射光可被转换成具有不同波长的另一光线。然而,光转换材料的转换效率可不为100%,导致输出光较不纯或具有较低的质量,因此本发明提供了一种可降低上述问题发生的发光装置。
发明内容
在一些实施例中,本发明提供了一种发光装置,包括一基板、多个第一光转换单元和一光源。多个第一光转换单元设置在光源上,而基板设置在多个第一光转换单元上。光源可发射一光线穿过多个第一光转换单元和基板以产生一第一光谱。第一光谱包括波长范围在520纳米到590纳米之间的一主波峰和波长范围在430纳米到470纳米之间的一第一子波峰,其中所述主波峰的强度大于所述第一子波峰的强度。
在一些实施例中,本发明提供了一种发光装置,包括一基板、多个第二光转换单元和一光源。多个第二光转换单元设置在光源上,而基板设置在多个第二光转换单元上。光源可发射一光线穿过多个第二光转换单元和基板以产生一第二光谱。第二光谱包括波长范围在591纳米到780纳米之间的一主波峰和波长范围在430纳米到470纳米之间的一子波峰,其中所述主波峰的强度大于所述子波峰的强度。
附图说明
图1为本发明第一实施例的发光装置的剖视示意图。
图2为第一实施例的第二基板的透光率与从第一发光单元发射的第一光线的第一光谱的示意图。
图3为第一实施例的第二基板的透光率与从第二发光单元发射的第二光线的第二光谱的示意图。
图4为第一实施例的一变化实施例的第二基板的透光率与从第一发光单元发射的第一光线的第一光谱的示意图。
图5为CIE 1931的色度坐标图。
图6为本发明第二实施例的发光装置的剖视示意图。
图7为测量第二基板的透光率的示意图。
图8为本发明第三实施例的发光装置的剖视示意图。
图9为本发明第四实施例的发光装置的剖视示意图。
图10为本发明第五实施例的发光装置的剖视示意图。
图11为本发明第六实施例的发光装置的剖视示意图。
附图标记说明:10-发光装置;100-第一基板;102-第二基板;103-挡墙;1040-主动层;1042-闸极;1044-源极/汲极;106-遮挡结构;108、126-平坦层;110、146-黏着层;112-散射粒子;114-抗反射层;116-光调变层;120、128-配向膜;122、130-电极;124、132-偏光片;134-光学膜;136、148-发光源;138-光学层;140-显示面板;142-量子点结构;144-下基板;AA-显示区域;AG、AR、AT-箭头;AM-主动矩阵层;CE-曲形边缘;CL1、CL2-光线;CS-区域;EL1-第一电极;EL2-第二电极;FL1、FL2-滤光层;G、R-点;IL1、IL2-入射光;LCS1、LCS2-光转换结构;LCU1-第一光转换单元;LCU2-第二光转换单元;LCU3-第三光转换单元;LES、LES1、LES2-发光结构;LS-光源;LU1、LU2、LU3-发光单元;MW11、MW2-主波;OL1-第一光线;OL2-第二光线;OL3-第三光线;PA-周边区域;PM11、PM2-主波峰;PS11-第一子波峰;PS12-第二子波峰;PS2-子波峰;Q-测量位置;QD、QD1、QD2-量子点;SW11、SW2、SW12-子波;T1-第一透光率;T2-第二透光率;T3-第三透光率;T4-第四透光率;T5-第五透光率;T1’、T2’、T3’、T4’、T5’-透光率;TL1-点虚线;TL2-虚线;Tr-晶体管;V-法线方向。
具体实施方式
通过参考以下的详细描述并同时结合附图可以理解本发明,须注意的是,为了使读者能容易了解及图式的简洁,本发明中的多张附图只绘出电子装置的一部分,且附图中的特定元件并非依照实际比例绘图。此外,图中各元件的数量及尺寸仅作为示意,并非用来限制本发明的范围。
本发明通篇说明书与所附的权利要求中会使用某些词汇来指称特定元件。本领域技术人员应理解,电子设备制造商可能会以不同的名称来指称相同的元件。本文并不意在区分那些功能相同但名称不同的元件。在下文说明书与权利要求书中,“含有”与“包括”等词为开放式词语,因此其应被解释为“含有但不限定为…”之意。
应了解到,当元件或膜层被称为在另一个元件或膜层“上”或“连接到”另一个元件或膜层时,它可以直接在此另一元件或膜层上或直接连接到此另一元件或层,或者两者之间存在有插入的元件或膜层。相反地,当元件被称为“直接”在另一个元件或膜层“上”或“直接连接到”另一个元件或膜层时,两者之间不存在有插入的元件或膜层。
应了解到,当元件与另一个元件“电性连接”、“电连接”或“耦接”,可以指元件之间是以直接接触方式达成电传输的效果,或是元件之间还有另外的桥接元件,两个元件通过该桥接元件达成电传输的效果。
术语“特定值在第一值到第二值之间”或“特定范围为第一值到第二值”表示该特定值或该特定范围是大于或等于第一值且小于或等于第二值。
术语“大约”、“大致上”、“等于”或“相同”所代表的是落在给定数值或范围的20%的范围内,或是指落在给定数值或范围的10%、5%、3%、2%、1%或0.5%的范围内。
虽然术语第一、第二、第三…可用以描述多种组成元件,但组成元件并不以此术语为限。此术语仅用于区别说明书内单一组成元件与其他组成元件。权利要求中可不使用相同术语,而依照权利要求中元件宣告的顺序以第一、第二、第三…取代。因此,在下文说明书中,第一组成元件在权利要求中可能为第二组成元件。
须知悉的是,以下所举实施例可以在不脱离本发明的精神下,可将数个不同实施例中的技术特征进行替换、重组、混合以完成其他实施例。
请参考图1,图1为本发明第一实施例的发光装置的剖视示意图。发光装置可包括显示设备、电子装置、可挠曲装置、拼接装置或其他适合的装置,但不以此为限。举例来说(如图1所示),发光装置10可包括有机发光二极管(organic light emitting diode,OLED)、无机发光二极管(inorganic light emittingdiode,LED)或量子点发光二极管(quantum dot light emitting diode,QLED orQDLED)等光源,但不以此为限。发光装置10可包括第一基板100、第二基板102和光源LS。第二基板102可相对于第一基板100设置,且光源LS可设置在第一基板100和第二基板102之间,但不以此为限。光源LS可包括至少一个发光结构、多个第一电极EL1和一第二电极EL2,但不以此为限。举例来说(如图1所示),光源LS可包括两个发光结构(发光结构LES1和发光结构LES2),且发光结构LES1或发光结构LES2可包括有机发光材料、无机发光材料或量子点发光材料、其他适合的材料或上述材料的组合,但不以此为限。在一些实施例中,发光结构LES1及/或发光结构LES2可发射蓝光、紫光、紫外光或其他波长较蓝光更短且适合的光,但不以此为限。在一些实施例中,发光结构LES1及/或发光结构LES2可为连续的(或是说,发光结构LES1及/或发光结构LES2可为整面延伸的),并可延伸经过多个发光单元(发光单元LU1、发光单元LU2和发光单元LU3)。在一些实施例中(未示出),发光结构LES1及/或发光结构LES2可具有单独的图案,例如岛状,且单独图案的其中一个可设置在发光单元的其中一个之中,但不以此为限。在一些其他实施例中,发光单元内可具有多个发光结构。
此外,发光结构LES1及/或发光结构LES2可设置在第一电极EL1和第二电极EL2之间。第一电极EL1的其中一个可设置在(或对应设置在)发光单元的其中一个(例如发光单元LU1、发光单元LU2或发光单元LU3)中,且第二电极EL2可为连续的,并可延伸经过发光单元LU1、发光单元LU2和发光单元LU3,但不以此为限。第二电极EL2可为阴极或阳极的其中一个,而第一电极EL1可为阴极或阳极的另外一个。第二电极EL2的材料可包括透明导电材料,例如氧化铟锡(indium tin oxide,ITO)、氧化铟锌(indium zinc oxide,IZO)、氧化铟镓锌(indium gallium zinc oxide,IGZO)、氧化铟锌锡(indium tinzinc oxide,ITZO)、氧化锡锑(antimony tin oxide,ATO)、氧化锌锑(antimony zincoxide,AZO)、其他任何适合的材料或上述材料的组合,但不以此为限。第一电极EL1的材料可包括反射性导电材料(例如金属或合金),但不以此为限。此外,发光装置10可包括多个挡墙103(例如像素单元定义层),设置在至少一个发光结构(发光结构LES1或发光结构LES2)和第二基板102之间。具体来说,挡墙103可设置在第二电极EL2和发光结构LES1(或发光结构LES2)之间。在一些实施例中,发光结构LES1(或发光结构LES2)可设置在多个挡墙103上。在一些实施例中,发光单元可通过挡墙所定义,但不以此为限。在一些实施例中,发光单元可通过其他适合的材料(例如遮挡结构106,细节于下文中详述)所定义。挡墙103的材料可包括不透明的绝缘材料,例如反射材料、光吸收材料或遮光材料,但不以此为限。
第一基板100上可设置主动矩阵层AM,主动矩阵层AM可包括多个晶体管Tr。发光单元LU1、发光单元LU2和发光单元LU3可分别包括至少一个晶体管Tr,且第一电极EL1可电连接到对应的晶体管Tr,但不以此为限。在其他实施例中,第一电极EL1可电连接到对应的多个晶体管,其中包括晶体管Tr。晶体管Tr可包括主动层1040、闸极1042和源极/汲极1044。主动矩阵层AM可包括信号线(例如扫描线、数据线、电源线或参考线)、绝缘层或其他适合的元件。第一基板100可为数组基板。第一基板100及/或第二基板102可包括硬质基板(例如玻璃基板或石英基板)或可挠曲基板(例如塑料基板或树脂基板),但不以此为限。塑料基板的材料可包括聚酰亚胺(polyimide,PI)、聚碳酸酯(polycarbonate,PC)或聚对苯二甲酸乙二酯(polyethyleneterephthalate,PET),但不以此为限。
遮挡结构106可邻近于光转换单元。遮挡结构106可包括多个开口,且一个光转换单元(例如第一光转换单元LCU1、第二光转换单元LCU2或第三光转换单元LCU3)可设置在(或对应设置在)遮挡结构106的对应的开口中。遮挡结构106的材料可包括黑色光阻、黑色印刷墨水、黑色树脂、深色树脂或墨水,或其他适合的材料或上述材料的组合,但不以此为限。此外,平坦层108可设置在遮挡结构106和光源LS之间。在一些实施例中,平坦层108、遮挡结构106、第一光转换单元LCU1、第二光转换单元LCU2和第三光转换单元LCU3可形成在第二基板102上,且第二基板102可称为彩色滤光层基板或保护基板,但不以此为限。第一光转换单元LCU1、第二光转换单元LCU2和第三光转换单元LCU3可设置在第二基板102和光源LS之间,但不以此为限。在一些实施例中,遮挡结构106、第一光转换单元LCU1、第二光转换单元LCU2或第三光转换单元LCU3可形成在第一基板100上。在一些实施例中,黏着层110可设置在平坦层108和光源LS之间。此外,在第二基板102远离光源LS的一表面上可设置抗反射层114。
须注意的是,一个发光单元LU1、一个发光单元LU2或一个发光单元LU3可对应到遮挡结构106的一个开口。举例来说,在第一基板100(或第二基板102)的法线方向V上,一个发光单元(例如发光单元LU1、发光单元LU2或发光单元LU3)可对应到遮挡结构106的一个开口的垂直区域中的所有元件(或膜层)。在一些实施例中,一个发光单元可为一个子像素(例如红色子像素、绿色子像素或蓝色子像素,但不以此为限)。
第一光转换单元LCU1可包括光转换结构LCS1和滤光层FL1,第二光转换单元LCU2可包括光转换结构LCS2和滤光层FL2。滤光层FL1(或滤光层FL2)可设置在光转换结构LCS1(或光转换结构LCS2)与第二基板102之间,但不以此为限。光转换结构LCS1或光转换结构LCS2可包括量子点、荧光材料、磷光材料、彩色滤光层、其他适合的材料或上述材料的组合,但不以此为限。量子点可例如由半导体或纳米晶体结构形成,且可包括硒化镉(CdSe)、硫化镉(CdS)、碲化镉(CdTe)、硒化锌(ZnSe)、碲化锌(ZnTe)、硫化锌(ZnS)、碲化汞(HgTe)、砷化铟(InAs)、合金(Cd1-xZnxSe1-ySy)、硒化镉/硫化锌(CdSe/ZnS)、磷化铟(InP)或砷化镓(GaAs),但不以此为限。量子点通常具有1纳米(nm)到30纳米之间、1纳米到20纳米之间或1纳米到10纳米之间的粒径,但不以此为限。在一些实施例中,量子点可被光源LS发射的入射光激发,且入射光可被转换为具有不同波长的发射光。发射光的颜色(或波长)可通过量子点的材料或大小所调整。在其他实施例中,只要量子点可发射具有适合的颜色(或波长)的光线,其可包括圆球粒子、圆柱粒子或具有任何适合形状的粒子。此外,滤光层FL1和滤光层FL2可包括彩色滤光层。举例来说,滤光层FL1可包括绿色彩色滤光层,滤光层FL2可包括红色彩色滤光层,但不以此为限。在一些实施例中,滤光层FL1和滤光层FL2可包括布拉格层。在一些实施例中,滤光层FL1和滤光层FL2可选择性地被移除或被取代。
如图1所示,光转换结构LCS1可包括量子点QD1,其中量子点QD1可被一部分的入射光IL1激发,且所述部分的入射光IL1可被量子点QD1转换为光线CL1。第一光线OL1可为光线CL1和未被转换的入射光IL1的混合光。在图1所示的第一发光单元LU1中,当未被转换的入射光IL1穿过(或通过)滤光层FL1或第二基板102时,其强度可被滤光层FL1或第二基板102减弱。第二基板102可减少至少一部分的未被转换的入射光IL1。因此,第一光线OL1可为第一发光单元LU1所发射的输出光。输出光可定义为观察者所察觉到的发光装置10所发出的最终可视光。光转换结构LCS2可包括量子点QD2,其中量子点QD2可被一部分的入射光IL2激发,且所述部分的入射光IL2可被量子点QD2转换为光线CL2。量子点QD2可与量子点QD1不同。第二光线OL2可为光线CL2和未被转换的入射光IL2的混合光。在图1所示的第二发光单元LU2中,当未被转换的入射光IL2穿过(或通过)滤光层FL2或第二基板102时,其强度可被滤光层FL2或第二基板102减弱。因此,第二光线OL2可为第二发光单元LU2所发射的输出光。
在一些实施例中,第三发光单元LU3所发射的第三光线OL3可为蓝光,但不以此为限。在一些实施例中,光源LS可发射蓝光,且第三光转换单元LCU3可包括不包含量子点的透明层。此外,第三光转换单元LCU3可包括一些散射粒子112,但不以此为限。在一些实施例中,第三光转换单元LCU3可包括蓝色的彩色滤光层。在一些实施例中,第三光转换单元LCU3可不包括在发光单元LU3中。在一些实施例中,第三光转换单元LCU3可包括适合类型的量子点以调整第三光线OL3的波长。
在一些实施例中,第一光线OL1可为绿光,第二光线OL2可为红光,且第三光线可为蓝光,但不以此为限。在一些实施例中,发光装置10可包括其他发光单元以发射具有不同颜色(或波长)的光线。
在一些实施例中,第二基板102可包括多个金属离子、多个纳米粒子或黄化聚合物,但不以此为限。金属离子可包括第一过渡系、第二过渡系、第三过渡系或第四过渡系的金属离子,但不以此为限。举例来说,金属离子可包括钛、铬、锰、铁、钴、镍、铜、锌、钇、锆、钼、银、镉、铂、金、其他适合的材料或上述材料的组合,但不以此为限。在一些实施例中,可通过将金属盐加入第二基板102中以引入金属离子。
纳米粒子可包括金属氧化物纳米粒子或金属纳米粒子。金属氧化物纳米粒子可包括二氧化钛(TiO2)、二氧化锆(ZrO2)、氧化铝(Al2O3)、氧化铟(In2O3)、氧化锌(ZnO)、氧化锡(SnO2)、氧化锑(Sb2O3)或二氧化硅(SiO2)的纳米粒子,但不以此为限。金属氧化物纳米粒子可吸收(或过滤)至少一部分的入射光(例如蓝光)。金属纳米粒子可包括金、银、铜、铂、铁、钴、镍或锰的纳米粒子,但不以此为限。金属纳米粒子可散射至少一部分的蓝光。在一些实施例中,金属纳米粒子可散射至少一部分的蓝光到量子点,进而增加光转换的效率。在一些实施例中,纳米粒子可以薄膜(或膜层)的形式形成在第二基板102的至少一表面上。在一些实施例中,可执行图案化的制程使纳米粒子薄膜具有图案(未示出),且在第二基板102的法线方向V上,至少一部分的纳米粒子薄膜(或膜层)可与光转换结构LCS1(或光转换结构LCS2)重叠,但不以此为限。
黄化聚合物可包括具有高分子量的环氧树脂或未饱和的聚酯树脂,但不以此为限。举例来说,第二基板102的材料可包括压克力或聚酰亚胺,且具有高分子量的环氧树脂或未饱和的聚酯树脂可被加入第二基板102中,但不以此为限。在一些实施例中,可对第二基板102执行老化制程以减少蓝光。老化制程可包括化学老化或物理老化,但不以此为限。
请参考图2,图2为第一实施例的第二基板102的透光率(左侧的垂直轴代表透光率(%))与从第一发光单元LU1发射的第一光线OL1的第一光谱的示意图。在图2到图4中,点虚线TL1代表的是包括上述金属离子、纳米粒子或黄化聚合物中至少一种的第二基板102的透光率。虚线TL2代表的是未经过处理的普通基板的透光率。举例来说,普通基板不包括金属离子、纳米粒子或黄化聚合物。在图2中,实线代表的是第一光线OL1的第一光谱,其中第一光谱可包括主波MW11和子波SW11。在一些实施例中,第一光谱可为光源LS所发射的光在穿过第一光转换单元LCU1和第二基板102后的光谱。在一些实施例中,主波MW11可代表光线穿过第二基板102后的光线CL1(即光线已被第一光转换单元LCU1转换),子波SW11可代表穿过第二基板102后的未被转换的入射光IL1(例如蓝光)。
在图2中,主波MW11具有主波峰PM11,且子波SW11具有第一子波峰PS11。主波峰PM11的波长范围在520纳米(nm)到590纳米之间,第一子波峰PS11的波长范围在430纳米到470纳米之间,且主波峰PM11的强度(右侧的垂直轴代表强度)大于第一子波峰PS11的强度。此外,“主波峰”可定义为主波的波峰,且“子波峰”可被定义为对应的波长范围中的最大强度,例如为波长范围在430纳米到470纳米之间的最大强度,但不以此为限。在其他光谱中,“主波峰”和“子波峰”可以与上述相同的方式定义。
请参考图3,图3为第一实施例的第二基板的透光率与从第二发光单元LU2发射的第二光线OL2的第二光谱的示意图。如图3所示,实线代表的是第二光线OL2的第二光谱,其中第二光谱可包括主波MW2和子波SW2。在本实施例中,第二光谱可为光源LS所发射的光在穿过第二光转换单元LCU2和第二基板102后的光谱。主波MW2可代表光线穿过第二基板102后的光线CL2(即光线已被第二光转换单元LCU2转换),子波SW2可代表穿过第二基板102后的未被转换的入射光IL2(例如蓝光)。请参考图3(右侧的垂直轴代表强度),主波MW2具有主波峰PM2,子波SW2具有子波峰PS2。主波峰PM2的波长范围在591纳米到780纳米之间,子波峰PS2的波长范围在430纳米到470纳米之间,且主波峰PM2的强度大于子波峰PS2的强度。
如图2和图3的点虚线TL1所示,第二基板102在主波峰PM11的波长下的第一透光率T1大于第二基板102在第一子波峰PS11的波长下的第二透光率T2,或者,第二基板102在主波峰PM2的波长下的第四透光率T4大于第二基板102子波峰PS2的波长下的第五透光率T5。在一些实施例中,第一透光率T1(或是第四透光率T4)的范围可为91%到95%(91%≤透光率≤95%),第二透光率T2及/或第五透光率T5可小于第一透光率T1(或第四透光率T4)。如图2和图3的虚线TL2所示,当普通基板未经过处理时,普通基板在主波峰PM11的波长下的透光率T1’和普通基板在第一子波峰PS11的波长下的透光率T2’大致上相同,或者,普通基板在主波峰PM2的波长下的透光率T4’与普通基板在子波峰PS2的波长下的透光率T5’大致上相同。当第二基板102为经过处理的时候,例如第二基板102可包括金属离子、纳米粒子或黄化聚合物,第二基板102在第一子波峰PS11(或子波峰PS2)的波长下的透光率可降低。
表1描述了当第二基板102包括金属离子、纳米粒子和黄化聚合物的其中一个(举例来说,表1中的A、E、I),或是包括上述材料的其中两个的结合(举例来说,表1的B、C、D、F、G、H)时,第二基板102的第二透光率T2(或第五透光率T5)。以表1的A为例,此数值代表当第二基板102包括1%wt到20%wt的金属离子时,其透光率的数值,其中第二透光率T2(或第五透光率T5)的范围可为90%到91%(90%≤透光率≤91%)。以表1的B为例,此数值代表当第二基板102包括1%wt到20%wt的金属离子和1%wt到20%wt的纳米粒子时,其透光率的数值,其中第二透光率T2(或第五透光率T5)的范围可为72%到82%(72%≤透光率≤82%)。表1中其他条件(例如C-I)是与上述说明相似的,故不再赘述。
表1
透光率(%)(T2或T5) | 金属离子 | 纳米粒子 | 黄化聚合物 |
金属离子 | A:90-91% | B:72-82% | C:76-82% |
纳米粒子 | D:72-82% | E:80-90% | F:67-81% |
黄化聚合物 | G:76-82% | H:67-81% | I:84-90% |
此外,表2描述了当第二基板102包括金属离子、纳米粒子和黄化聚合物的其中一个(举例来说,表2中的A、E、I),或是包括上述材料的其中两个的结合(举例来说,表2的B、C、D、F、G、H)时,第二透光率T2对第一透光率T1的比值(或第五透光率T5对第四透光率T4的比值)。以表2的A为例,此数值代表当第二基板102包括1%wt到20%wt的金属离子时,第二透光率T2对第一透光率T1的比值(T2/T1)(或是第五透光率T5对第四透光率T4的比值(T5/T4)),其中该比值可位于97%到98%的范围中(97%≤比值≤98%)。以表2的B为例,此数值代表当第二基板102包括1%wt到20%wt的金属离子和1%wt到20%wt的纳米粒子时,第二透光率T2对第一透光率T1的比值(T2/T1)(或第五透光率T5对第四透光率T4的比值(T5/T4)),其中该比值可位于77%到88%的范围中(77%≤比值≤88%)。表2中其他条件(例如C-I)是为相似的,故不再赘述。根据表2的A到I,第二透光率T2对第一透光率T1的比值的范围可为72%到98%。
表2
比值(T2/T1或T5/T4) | 金属离子 | 纳米粒子 | 黄化聚合物 |
金属离子 | A:97-98% | B:77-88% | C:81-88% |
纳米粒子 | D:77-88% | E:86-97% | F:72-87% |
黄化聚合物 | G:81-88% | H:72-87% | I:90-97% |
请参考图4,图4为第一实施例的一变化实施例的第二基板102的透光率与从第一发光单元LU1发射的第一光线OL1的第一光谱的示意图。与图2不同的是,图4中的第一光谱可包括子波SW12和子波SW11,其中子波SW12可代表第一光线OL1中未被转换的入射光IL1的不同部分。请参考图4(右侧的垂直轴代表强度),子波SW12具有波长范围在470纳米到510纳米之间的第二子波峰PS12,且第二子波峰PS12的强度小于主波峰PM11的强度。“第一子波峰”和“第二子波峰”可被定义为在对应的波长范围中的最大强度,例如波长范围在430纳米到470纳米之间的最大强度和波长范围在470纳米到510纳米之间的最大强度,但不以此为限。如图4的点虚线TL1所示,第二基板102在主波峰PM11的波长下的第一透光率T1大于第二基板102在第二子波峰PS12的波长下的第三透光率T3,且第三透光率T3对第一透光率T1的比值(T3/T1)的范围为85%到99%(85%≤比值≤99%)。在图4中,第三透光率T3可大于第二透光率T2,并小于第一透光率T1,但不以此为限。当第二基板102包括金属离子、纳米粒子或黄化聚合物时,第一透光率T1可落在91%到95%的范围中(91%≤第一透光率T1≤95%),且第二透光率T2和第三透光率T3可小于第一透光率T1。如图4的虚线TL2所示,当普通基板不包括金属离子、纳米粒子或黄化聚合物时,普通基板的透光率T1’和透光率T2’大致上相同,或者,普通基板的透光率T1’和透光率T3’大致上相同。
请参考图5,图5为CIE 1931的色度坐标图,其中色域通常可以CIE 1931色度坐标图中的区域表示。沿着曲形边缘CE标示的数字可代表波长。区域CS可代表发光装置10的色彩空间,其中点G可代表绿原色(green primarycolor)、点R可代表红原色(red primarycolor)。在发光单元LU1中,未被转换的入射光(例如蓝光)的强度可被滤光层FL1或第二基板102减少,第一光线OL1的x-y坐标可接近点G,如图5中的箭头AG所示。举例来说,发光装置10在CIE 1931色域的绿色x坐标值的范围为0.17到0.29(0.17≤x≤0.29),且发光装置10在CIE 1931色域的绿色y坐标值的范围为0.675到0.8(0.675≤y≤0.8)。此外,在发光单元LU2中,由于未被转换的入射光(例如蓝光)的强度可被滤光层FL2或第二基板102降低,因此第二光线OL2的x-y坐标可接近点R,如图5中的箭头AR所示。举例来说,发光装置10在CIE 1931色域的红色x坐标值的范围为0.68到0.71(0.68≤x≤0.71),且发光装置10在CIE 1931色域的红色y坐标值的范围为0.29到0.31(0.29≤y≤0.31)。因此,发光装置10中的发光单元LU1或发光单元LU2可发射具有接近红原色或绿原色的颜色的光线,进而增加发光质量(或显示质量)。
在一些实施例中,由于具有了第二基板102,因此滤光层FL1和滤光层FL2的厚度可被减少为小于3微米(μm)且大于0。此外,在一些实施例中,可移除滤光层FL1和滤光层FL2以减少发光装置10的厚度。
本发明不同的实施例中的技术特征可被替换、重组或混合。为了方便比较不同实施例之间的差异,下文会详述不同实施例之间的差异,至于相同的技术特征则不再赘述。
请参考图6,图6为本发明第二实施例的发光装置的剖视示意图。与第一实施例不同的是,发光装置10可为液晶显示设备,但不以此为限。第一基板100可设置在光源LS和第二基板102之间,且光调变层116可设置在第一基板100和第二基板102之间。光调变层116可为液晶层,且第一基板100和第二基板102之间可设置一些间隔物108。配向膜120、电极122和平坦层126可设置在第二基板102和光调变层116之间,但不以此为限。配向膜128、多个电极130和主动矩阵层AM可设置在光调变层116和第一基板100之间,但不以此为限。
配向膜120和配向膜128可为聚酰亚胺层,但不以此为限。电极122可为共同电极,且电极130可为像素电极,其中电极130可电连接到主动矩阵层AM中的至少一个晶体管,但不以此为限。遮挡结构106或间隔物118的材料可包括黑色光阻、黑色印刷墨水、黑色树脂、深色树脂或墨水,或其他适合的材料或上述材料的组合,但不以此为限。光学膜134可包括反射式偏光增亮膜(dual brightness enhancement film,DBEF)、棱镜片、扩散板或其他适合的光学膜或上述材料的组合,但不以此为限。在图6中,光源LS可发射蓝光,且第三光转换单元LCU3可被替换为透明层,其中透明层中可不具有量子点或散射粒子,但不以此为限。
发光装置10还可包括偏光片124和偏光片132。偏光片124可设置在平坦层126和光转换单元之间,偏光片132可设置在第一基板100和光源LS之间。然而,偏光片124和偏光片132并不限于设置在上述的位置。在一些实施例中,光调变层116可设置在两个偏光片中以调整灰阶。在一些实施例中,偏光片124及/或偏光片132可设置在第一基板100和光转换单元之间。举例来说,偏光片124及/或偏光片132可包括金属导线,其可为一般所称的金属线栅偏振片(wire grid polarizer,WGP),但不以此为限。金属线的材料可包括金属、金属合金、其他适合的材料或上述材料的组合,但不以此为限。此外,发光装置10还可包括至少一个光学膜134,设置在偏光片132和光源LS之间。在一些实施例中,光学膜134可包括反射式偏光增亮膜、棱镜片、扩散板或其他适合的光学膜或上述材料的组合,但不以此为限。
在图6中,光源LS可为背光模块。光源LS可包括发光源136和至少一光学层138。光学层138可包括导光板、扩散板、反射膜或其他光学膜(或板)。光源LS可为侧光式背光模块,且发光源136可靠近光学层138(例如导光板)的至少一侧壁设置,或者,光源LS和第一基板100(或第二基板102)可设置在光学层138的不同侧,但不以此为限。在一些实施例中,光源LS可为直下式背光模块(未示出),光学层138可为扩散板、反射膜或其他光学膜,且光学层138(例如扩散板)可设置在发光源136和第一基板100之间,或者,光学层138(例如反射膜)可设置在发光源136下。发光源136可包括无机发光二极管、微型发光二极管、次毫米发光二极管、有机发光二极管、量子点发光二极管(QLED,QDLED)、量子点、荧光材料、磷光材料、其他适合的光源或上述材料的组合,但不以此为限。在一些实施例中,背光模块可发射蓝光、紫光或紫外光,但不以此为限。
请参考图7,图7为测量第二基板的透光率的示意图。在一些实施例中,在发光装置10拆解之后,可对第二基板102的测量位置Q进行透光率(例如透光率T1、T2、T3、T4或T5)的测量。举例来说,图7的第二基板102可从图6中的发光装置10拆解而得,但不以此为限。在一些实施例中,当第二基板102的面积大于第一基板100的面积时,第二基板102的透光率可在不拆解发光装置10的情形下被测量,其中测量位置Q可从第二基板102的一部分之中选择,且第二基板102的所述部分在第二基板102的法线方向V上不与第一基板100重叠,但不以此为限。如图7所示,第二基板102可包括显示区域AA和周边区域PA,且遮挡结构106和光转换单元(例如光转换单元LCU1、光转换单元LCU2)可设置在显示区域AA中。在一些实施例中,遮挡结构106可延伸到周边区域PA的一部分,但不以此为限。请参考图7所示的箭头AT,第二基板102的透光率可在位于第二基板102的周边区域PA的测量位置Q测量,但不以此为限。在一些实施例中,第二基板102的透光率可在位于第二基板102的显示区域AA的测量位置Q测量。
如图7所示,平坦层126的一部分、电极122的一部分和配向膜120的一部分可对应到第二基板102的测量位置Q,但不以此为限。在一些实施例中,聚合物膜、布拉格层、二氧化硅膜、氮化硅膜、无机材料、有机材料或上述材料的组合可设置在第二基板102上,并可对应测量位置Q,但不以此为限。根据实验的结果,上述材料可不影响或轻微影响第二基板102的透光率,故影响可被忽略。
须注意的是,在测量第二基板102的透光率时,一些材料不应位于测量位置Q中,例如遮挡结构106、光转换单元(例如光转换单元LCU1、光转换单元LCU2和光转换单元LCU3)、滤光层(滤光层FL1和滤光层FL2)、偏光片124(例如金属线栅偏振片)、金属材料、其他反射材料、阴影材料或光吸收材料,但不以此为限。在进行测量之前,此些材料应通过干式蚀刻、湿式蚀刻或其他方法从测量位置Q移除。湿式蚀刻可包括滴蚀刻(drop etching)或淋蚀刻(shower etching),举例来说,可使用酸蚀刻液ST849或碱蚀刻液ST823,但不以此为限。干式蚀刻可包括使用高速粒子束、离子束或原子束来进行轰击蚀刻,但不以此为限。因此,在一些实施例中,第二基板102的透光率的测量会在设置在第二基板102上的其他膜层被移除后才进行。
在一些实施例中,透光率的测量可在第二基板102中均匀分布在显示区域AA及/或周边区域PA的36个测量位置进行,但不以此为限。36个测量位置可根据上述测量位置Q的挑选标准来挑选。
第二基板102的透光率可通过一些仪器测量,例如分光辐射计或色彩分析仪,但不以此为限。仪器可包括CA-210、CS1000T、CS2000、BM5A或其他适合的仪器,但不以此为限。此外,第一光线OL1或第二光线OL2的光谱可由分光辐射计所测量。仪器可设置在发光装置10的发光面的一侧,且发光面在测量时可以是远离光源LS的。发光装置10可开启至少一个发光单元LU1(或至少一个发光单元LU2),且发光装置10可发射第一光线OL1(或第二光线OL2)。在测量时,发光单元LU1或发光单元LU2可在最高灰阶下运作,但不以此为限。
请参考图8,图8为本发明第三实施例的发光装置的剖视示意图。与第二实施例不同的是,第二基板102设置在显示面板140(例如液晶显示面板)和光源LS之间。发光装置10可包括设置在显示面板140和光源LS之间的量子点结构142。量子点结构142包括下基板144、第二基板102、第一光转换单元LCU1、第二光转换单元LCU2和黏着层146。在一些实施例中,黏着层146可为黑色黏着层,但不以此为限。第一光转换单元LCU1、第二光转换单元LCU2和黏着层146可设置在下基板144和第二基板102之间,且第二基板102设置在第一光转换单元LCU1和第二光转换单元LCU2上。在一些实施例中,黏着层146可设置在下基板144(或第二基板102)的周边区域,且下基板144和第二基板102可通过黏着层146而贴合。在一些实施例中,黏着层146可邻近于(或围绕)第一光转换单元LCU1和第二光转换单元LCU2。在一些实施例中,光源LS可为侧光式背光模块,且光学层138可为导光板,但不以此为限。在一些实施例中,光源LS可为直下式背光模块(未示出),且光学层138可为扩散板或反射膜,但不以此为限。举例来说,扩散板可设置在光源LS上,或者,反射膜可设置在光源LS下,但不以此为限。
光源LS提供的光线(例如蓝光)可穿过第一光转换单元LCU1和第二光转换单元LCU2,且第一光转换单元LCU1和第二光转换单元LCU2所发射的光线(例如红光或绿光)可穿过第二基板102。第一光转换单元LCU1和第二光转换单元LCU2所发射的光线可混合以形成白光,且部分的蓝光可被第二基板102减少。此外,量子点结构142所提供的白光可被设置在液晶显示面板140的不同的子像素中的彩色滤光层转换成具有不同颜色(或波长)的光线,但不以此为限。在一些实施例中,第一光转换单元LCU1的量子点和第二光转换单元LCU2的量子点可为分离的(或被图案化的),且在第二基板102的法线方向V上,第一光转换单元LCU1的量子点不与第二光转换单元LCU2的量子点重叠,但不以此为限。在一些实施例中,第一光转换单元LCU1的量子点和第二光转换单元LCU2的量子点可混合在同一层中,且量子点结构142所发射的光的波长(或颜色)可被调变。在一些实施例中,显示面板140的基板可为不包括金属离子、纳米粒子或黄化聚合物的基板,但不以此为限。在一些实施例中,显示面板140中的至少一个基板可被替换为第二基板102,在此情形下,量子点结构142的基板可不包括金属离子、纳米粒子或黄化聚合物,但不以此为限。上述的替换设计可应用到第四实施例或第五实施例。
请参考图9,图9为本发明第四实施例的发光装置的剖视示意图。与第三实施例不同的是,发光装置10可包括导光板上量子点(quantum dot on lightguide,QDOG)结构。举例来说,第二基板102、第一光转换单元LCU1和第二光转换单元LCU2可与光学层138和下基板144结合(或涂布在光学层138和下基板144上)。
请参考图10,图10为本发明第五实施例的发光装置的剖视示意图。与第四实施例不同的是,发光装置10可包括导光板内量子点(quantum dot inlight guide,QDIG)结构。举例来说,光源LS可为发光源136,且第一光转换单元LCU1的量子点QD1和第二光转换单元LCU2的量子点QD2可混合并设置在光学层138中,但不以此为限。第二基板102可设置在光学层138上。因此,光源LS和第二基板102可设置在光学层138的不同侧,但不以此为限。
请参考图11,图11为本发明第六实施例的发光装置的剖视示意图。与第一实施例不同的是,发光装置10可包括无机发光二极管、微型发光二极管或次毫米发光二极管,但不以此为限。如图11所示,光源LS可包括至少一个发光源148,设置在第一基板100和第二基板102之间,且主动矩阵层AM的晶体管Tr可电连接到光源LS。举例来说,发光单元LU1、发光单元LU2和发光单元LU3中可分别设置至少一个发光源148。发光源148可包括无机发光二极管、微型发光二极管、次毫米发光二极管或量子点发光二极管(QLEDs或QD-LEDs),但不以此为限。在一些实施例中,主动矩阵层AM、光源LS、第一光转换单元LCU1、第二光转换单元LCU2、第三光转换单元LCU3或遮挡结构106可设置在(或形成在)第一基板100上,但不以此为限。在一些实施例中,遮挡结构106的厚度可大于或等于第一光转换单元LCU1、第二光转换单元LCU2及/或第三光转换单元LCU3的厚度。在一些实施例中,滤光层FL1可设置在第一光转换单元LCU1和第二基板102之间,滤光层FL2可设置在第二光转换单元LCU2和第二基板102之间,且第三光转换单元LCU3和第二基板102之间可设置气隙或透明层,但不以此为限。在一些实施例中,滤光层FL1和滤光层FL2可选择性地被移除或取代。
综上所述,发光装置可包括设置在第一光转换单元上、第二光转换单元上或第三光转换单元上的基板。基板可包括金属离子、纳米粒子、黄化聚合物或上述材料的组合,但不以此为限。第二基板在对应蓝光的波长下的透光率可被降低。当未被第一光转换单元或第二光转换单元的量子点转换的蓝光通过第二基板时,一些未被转换的蓝光可被减弱,因此输出光中蓝光的强度可被降低。由于未被转换的蓝光可被减少,发光装置中的发光单元可发射更接近红原色或绿原色的光,进而增加显示质量。
以上所述仅为本发明的实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种发光装置,其特征在于,包括:
一基板;
多个第一光转换单元;以及
一光源;
其中所述多个第一光转换单元设置在所述光源上,而所述基板设置在所述多个第一光转换单元上;
其中所述光源发射一光线穿过所述多个第一光转换单元和所述基板以产生一第一光谱,其中所述第一光谱包括波长范围在520纳米到590纳米之间的一主波峰以及波长范围在430纳米到470纳米之间的一第一子波峰,其中所述主波峰的强度大于所述第一子波峰的强度。
2.根据权利要求1所述的发光装置,其特征在于,还包括一第一基板相对于所述基板设置。
3.根据权利要求1所述的发光装置,其特征在于,所述基板包括彩色滤光层基板。
4.根据权利要求1所述的发光装置,其特征在于,还包括一闸极,其中所述多个第一光转换单元的其中一个的正投影重叠于所述闸极的正投影。
5.根据权利要求1所述的发光装置,其特征在于,所述光源包括一发光结构,且所述发光结构包括有机发光材料、无机发光材料或量子点发光材料。
6.一种发光装置,其特征在于,包括:
一基板;
多个第二光转换单元;以及
一光源;
其中所述多个第二光转换单元设置在所述光源上,而所述基板设置在所述多个第二光转换单元上;
其中所述光源发射一光线穿过所述多个第二光转换单元和所述基板以产生一第二光谱,其中所述第二光谱包括波长范围在591纳米到780纳米之间的一主波峰以及波长范围在430纳米到470纳米之间的一子波峰,其中所述主波峰的强度大于所述子波峰的强度。
7.根据权利要求6所述的发光装置,其特征在于,还包括一第一基板相对于所述基板设置。
8.根据权利要求6所述的发光装置,其特征在于,所述基板包括彩色滤光层基板。
9.根据权利要求6所述的发光装置,其特征在于,还包括另一闸极,其中所述多个第二光转换单元的其中一个的正投影重叠于所述另一闸极的正投影。
10.根据权利要求6所述的发光装置,其特征在于,所述光源包括一发光结构,且所述发光结构包括有机发光材料、无机发光材料或量子点发光材料。
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