CN117727701A - SIP ceramic shell structure based on HTCC technology and manufacturing method - Google Patents
SIP ceramic shell structure based on HTCC technology and manufacturing method Download PDFInfo
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- CN117727701A CN117727701A CN202311620809.XA CN202311620809A CN117727701A CN 117727701 A CN117727701 A CN 117727701A CN 202311620809 A CN202311620809 A CN 202311620809A CN 117727701 A CN117727701 A CN 117727701A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 70
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000005516 engineering process Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 51
- 229910052737 gold Inorganic materials 0.000 claims abstract description 46
- 239000010931 gold Substances 0.000 claims abstract description 46
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000005219 brazing Methods 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000007747 plating Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 20
- 229910000679 solder Inorganic materials 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000011068 loading method Methods 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims description 16
- 239000011265 semifinished product Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000010344 co-firing Methods 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000003995 emulsifying agent Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052573 porcelain Inorganic materials 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- UGTZMIPZNRIWHX-UHFFFAOYSA-K sodium trimetaphosphate Chemical compound [Na+].[Na+].[Na+].[O-]P1(=O)OP([O-])(=O)OP([O-])(=O)O1 UGTZMIPZNRIWHX-UHFFFAOYSA-K 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 4
- 238000004026 adhesive bonding Methods 0.000 abstract description 3
- 230000007774 longterm Effects 0.000 abstract description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 238000005237 degreasing agent Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- NNIPDXPTJYIMKW-UHFFFAOYSA-N iron tin Chemical compound [Fe].[Sn] NNIPDXPTJYIMKW-UHFFFAOYSA-N 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- Ceramic Products (AREA)
Abstract
The invention discloses an HTCC process-based SIP ceramic shell structure which comprises a metal cover plate, a metal surrounding frame, brazing material, a ceramic substrate, bao Jinou, a solder resist area and a thick gold area. The invention also provides a manufacturing method of the SIP ceramic shell based on the HTCC process. The manufacturing method comprises the following steps: preparing a metal cover plate, preparing a metal surrounding frame, preparing a ceramic part, preparing a brazing material, loading and brazing, and plating nickel and gold on a shell. The ceramic shell structure provides plating layers with different thicknesses in different areas in the same plane of the ceramic substrate, so that the use requirements of low-temperature solder sintering and gold wire bonding and conductive adhesive bonding of active devices, passive devices and other devices are met, and the long-term reliability of welding spots is ensured; meanwhile, the integrated circuit is compatible with the output of interfaces BGA, PGA, QFN and the like, and meets the requirements of miniaturization, high integration and high reliability of SIP products; the design structure and the manufacturing method are compatible with the HTCC technology, and the processing and forming method is simple and is convenient for mass production.
Description
Technical Field
The invention relates to the technical field of integrated circuit packaging, in particular to a SIP ceramic shell structure based on an HTCC process and a manufacturing method thereof.
Background
The SIP (system in Package) ceramic housing integrates a plurality of active electronic devices, passive electronic devices and other devices which cannot meet functional requirements, and has the characteristics of functional diversification, miniaturization, high integration and high reliability. In the ceramic shell packaging process, in order to meet the requirements of bonding, pasting and sintering functions of devices, different gold layer thicknesses are needed, a tin-based solder is adopted in the low-temperature sintering process of the devices, in order to prevent the phenomenon of gold embrittlement, manual soldering iron tin lining, tin lining of a tin lining groove and ultrasonic tin lining are generally adopted to match with a fixture to perform gold removing operation on a welding position, so that the total content of gold elements at the welding position is less than 3%wt, and the process has the following main problems: 1. in the production process of the ceramic shell, the plating of thick and thin gold on the same plane is difficult to realize, and the requirements of SIP for integrating a plurality of devices with different functions are not met. 2. The high-temperature co-fired ceramic shell has batch size fluctuation, has matching error with a tin lining tool clamp, and influences the gold removing effect; 3. the tin coating process has strict requirements on tin coating temperature and tin coating time, and if the tin coating process is improperly set, the flatness of a welding surface is affected; 4. improper clamping of the tin lining tool clamp design can lead to cracking risk of the ceramic shell; 5. timely use is needed after tin coating treatment, otherwise, the welding effect is affected; 6. after tin coating treatment, the gold removing effect is difficult to macroscopically check, and the mass fraction of gold elements is required to be analyzed through a metallographic section energy spectrum, so that the manufacturing and time cost is increased.
Disclosure of Invention
The invention aims to: in order to solve the problem of the same plane of the SIP ceramic shell integrating different functional requirements, the invention provides an HTCC technology-based SIP ceramic shell structure and a manufacturing method thereof, and the structure is used for producing the ceramic shell with high integration level, miniaturization and high reliability.
The technical scheme is as follows: the invention provides an HTCC technology-based SIP ceramic shell structure, which comprises a metal cover plate, a metal surrounding frame, brazing filler metal and a ceramic substrate, wherein the metal surrounding frame is arranged on the metal surrounding frame; the ceramic substrate comprises Bao Jinou, a solder resist area and a thick gold area, the metal surrounding frame and the ceramic substrate are welded together through brazing materials to form an airtight cavity, and the SIP ceramic shell is manufactured through parallel seal welding, gold soldering or laser seal and a metal cover plate.
Preferably, the ceramic substrate solder mask area is formed by co-firing a special solder mask slurry and a base material through a screen printing process.
Preferably, the width of the solder resist area of the multilayer wiring ceramic substrate is 0.1 mm-0.2 mm, and the height is 0.03 mm-0.05 mm.
Preferably, the material of the metal surrounding frame and the metal cover plate is 4J29 alloy or 4J42 alloy.
Preferably, the thickness of the brazing material is 0.05 mm-0.15 mm.
A manufacturing method of an SIP ceramic shell structure based on an HTCC process comprises the following steps:
(1) Preparing a metal cover plate: preparing a metal cover plate by adopting a chemical etching, stamping or wire cutting method, and electroplating nickel and gold for later use through cleaning and annealing procedures;
(2) Preparing a metal surrounding frame: preparing a metal enclosure frame by adopting a chemical etching, mechanical stamping or wire cutting method, and electroplating nickel and gold for later use through cleaning and annealing procedures;
(3) Preparing brazing material: agCu28 is used as a raw material, and a mechanical stamping method is adopted to prepare a brazing material;
(4) Preparing a ceramic substrate: taking aluminum oxide, tungsten or molybdenum as raw materials, adopting a co-firing multilayer ceramic process to prepare a ceramic part, and obtaining a ceramic part semi-finished product after chemical nickel plating;
(5) And (3) rack-loading brazing: assembling the metal surrounding frame, the brazing material and the porcelain semi-finished product together by utilizing a graphite die; putting the assembled graphite mold into a high-temperature brazing furnace to be brazed into a whole, so as to obtain a semi-finished product of the shell base;
(6) The housing base nickel plating and gold plating includes:
(6.1) depositing electroless nickel gold on the shell base semi-finished product in the area of the shell by a chemical replacement method;
(6.2) coating the photoresist with ceramic Bao Jinou by spraying or dispensing, drying and curing;
(6.3) connecting island of the thick gold region by gold wire bonding, and electroplating nickel gold on the thick gold region by an electroplating method;
and (6.4) removing the photoresist coated on the thin gold area inside the tube shell to finish the coating of all areas of the tube shell.
Preferably, in the step (4), the maximum temperature is controlled to 1450 to 1650 ℃ under specific sintering curve and atmospheric conditions.
Preferably, in the step (5), under the specific brazing curve condition, the temperature of the high temperature region is set to be (790-820) DEG C, and the chain speed is set to be (150-200) mm/min.
Preferably, in the step (6), the nickel-gold electroplating process of the thick gold area removes oil from a semi-finished product of a shell to be plated in an alkaline oil remover of 50g/L at 60 ℃ for 5-8 min, cleans for 3-9 min, and cleans for 2-3 min at 55 ℃ in a solution containing sodium hydroxide, OP emulsifier and trisodium metaphosphate; the temperature of the nickel plating tank is controlled to be 30-35 ℃, the time is controlled to be 2-3 min, the temperature of the gold plating tank is controlled to be 60-65 ℃ and the time is controlled to be 20-30 min.
Preferably, the thickness of the shell nickel layer is 1.3-8.9 μm, and the thickness of the thick gold area plating layer is 1.3-5.7 μm. The thickness of the coating of Bao Jinou is 0.03-0.3 mu m.
The beneficial effects are that: the invention provides a SIP ceramic shell structure based on an HTCC process and a manufacturing method thereof, which integrate various different device function requirements inside the SIP ceramic shell, and provides a design and manufacturing method of a structure of a thick and thin metal shell plated in different areas of the same ceramic plane, wherein the design and manufacturing method reduces the plating manufacturing cost of the shell, is compatible with various output interface forms such as BGA, PGA, QFN, realizes the use requirements of low-temperature solder sintering, gold wire bonding and conductive adhesive bonding of active devices, passive devices and other devices, does not need tin coating gold removing operation in the follow-up process, improves the sintering yield of devices, and meets the requirements of miniaturization, high integration and high reliability of the SIP ceramic shell.
Drawings
FIG. 1 is a schematic illustration of a SIP ceramic housing and a metallic cover plate;
fig. 2 is an interior of a ceramic substrate of a housing.
Detailed Description
A ceramic shell structure based on an HTCC technology and a manufacturing method thereof comprise a metal cover plate 1, a metal surrounding frame 2, a brazing material 3, a ceramic substrate 4, a thin gold region 5, a solder resist region 6 and a thick gold region 7. The shell structure provides plating layers with different thicknesses in different areas in the same plane of the ceramic substrate 4, realizes the use requirements of low-temperature solder sintering and gold wire bonding and conductive adhesive bonding of active devices, passive devices and other devices, ensures the long-term reliability of welding spots,
the SIP ceramic shell structure based on the HTCC technology is compatible with BGA, PGA, QFN and other interfaces for output; the ceramic substrate solder mask area 6 is formed by co-firing a special solder mask slurry and a base material through a screen printing process; the width of the solder mask area 6 is 0.1 mm-0.2 mm, and the height is 0.03 mm-0.05 mm; the materials of the metal surrounding frame 2 and the metal cover plate 1 are 4J29 alloy or 4J42 alloy; the thickness of the brazing material is 0.05 mm-0.15 mm.
The invention also provides a manufacturing method of the SIP ceramic shell based on the HTCC process. The manufacturing method comprises the following steps: preparing a metal cover plate 1, preparing a metal surrounding frame 2, preparing a ceramic part, preparing a brazing material 3, loading and brazing, and plating nickel and gold on a shell.
The specific process steps are as follows:
preparation of metal cover plate 1: the metal cover plate 2 is manufactured by adopting chemical etching, stamping, wire cutting and other methods, and the good surface weldability is ensured through the cleaning and annealing procedures, and nickel and gold are electroplated for later use;
preparation of a metal surrounding frame 2: the metal surrounding frame 2 is manufactured by adopting methods such as chemical etching, mechanical stamping, wire cutting and the like, and the good surface weldability is ensured through the cleaning and annealing procedures, and nickel and gold are electroplated for later use;
preparation of braze 3: agCu28 is used as a raw material, and a mechanical stamping method is adopted to prepare a brazing material 3;
preparation of the ceramic substrate 4: alumina is used as a main raw material, tungsten or molybdenum is used as a main metallized raw material, a co-fired multilayer ceramic (HTCC) process is adopted to prepare a ceramic part, and a semi-finished product of the ceramic part is obtained after chemical nickel plating;
and (3) rack-loading brazing: assembling the metal surrounding frame 2, the brazing material 3 and the porcelain semi-finished product together by utilizing a graphite die; the assembled graphite mold is put into a high-temperature brazing furnace to be brazed into a whole, and a shell base semi-finished product is obtained;
plating nickel and gold on a shell base: 1. depositing electroless nickel gold on the shell base semi-finished product in the last step through a chemical replacement method in the area used by the shell; 2. coating the photoresist with ceramic Bao Jinou 5 by spraying or dispensing, drying and curing; 3. the islands of the thick gold region 7 are communicated through gold wire bonding, and nickel gold is electroplated on the thick gold region through an electroplating method; 4. and (5) removing photoresist coated on the thin gold area 5 in the tube shell to finish the coating of all areas of the tube shell.
Annealing: and (3) annealing the electroplated shell base and the electroplated metal cover plate 1 in a high-temperature diffusion furnace under the protection of nitrogen at 400-450 ℃ for 5-10 min.
The preparation of the ceramic substrate 4 is carried out under specific sintering curves and atmosphere conditions, and the highest temperature is controlled to be 1450-1650 ℃; the temperature of the high temperature area is set to be (790-820) DEG C, the chain speed is set to be (150-200) mm/min, and the brazing material can be well spread to ensure the air tightness of the product after brazing under the specific brazing curve condition; the nickel-gold electroplating process of the thick gold region 7 comprises the steps of degreasing a semi-finished product of a shell to be plated in an alkaline degreasing agent with the concentration of 50g/L at 60 ℃ for 5-8 min, cleaning for 3-9 min, and then cleaning for 2-3 min in a solution containing sodium hydroxide, OP emulsifier and trisodium metaphosphate at 55 ℃; controlling the temperature of the nickel plating tank to be (30-35) DEG C, the time to be (2-3) min, the temperature of the gold plating tank to be (60-65) DEG C, and the time to be (20-30) min; the thickness of the shell nickel layer is 1.3-8.9 mu m, and the thickness of the plating layer of the thick gold region 7 is 1.3-5.7 mu m. Bao Jinou 5 the thickness of the coating is 0.03-0.3 μm.
Claims (10)
1. The SIP ceramic shell structure based on the HTCC process is characterized by comprising a metal cover plate (1), a metal surrounding frame (2), brazing material (3) and a ceramic substrate (4); the ceramic substrate (4) comprises a Bao Jinou (5), a solder mask region (6) and a thick gold region (7), wherein the solder mask region (6) is sealed outside the Bao Jinou (5), and the thick gold region (7) is positioned outside the Bao Jinou (5) and the solder mask region (6); the metal surrounding frame (2) and the ceramic substrate (4) are welded together through brazing material (3) to form an airtight cavity, and the SIP ceramic shell is manufactured through parallel seal welding, gold soldering or laser sealing and the metal cover plate (1).
2. The SIP ceramic shell structure based on HTCC process according to claim 1, wherein the ceramic substrate solder mask area (6) is co-fired with the substrate by a screen printing process with a tailored solder mask paste.
3. The SIP ceramic housing structure based on HTCC process according to claim 1, wherein the width of the solder mask area (6) of the multilayer wiring ceramic substrate is 0.1mm to 0.2mm and the height is 0.03mm to 0.05mm.
4. The HTCC process SIP ceramic housing structure according to claim 1, characterized in that the material of the metal enclosure frame (2) and the metal cover plate (1) is 4J29 alloy or 4J42 alloy.
5. The SIP ceramic shell structure based on HTCC process according to claim 1, characterized in that the brazing material (3) has a thickness of 0.05 mm-0.15 mm.
6. The method of manufacturing a SIP ceramic shell structure based on HTCC process according to any of claims 1-5, comprising the steps of:
(1) Preparing a metal cover plate: preparing a metal cover plate (1) by adopting a chemical etching, stamping or wire cutting method, and electroplating nickel and gold for later use through a cleaning and annealing process;
(2) Preparing a metal surrounding frame: preparing a metal surrounding frame (2) by adopting a chemical etching, mechanical stamping or wire cutting method, and electroplating nickel and gold for later use through cleaning and annealing procedures;
(3) Preparing brazing material: agCu28 is used as a raw material, and a mechanical stamping method is adopted to prepare a brazing material (3);
(4) Preparing a ceramic substrate: taking aluminum oxide, tungsten or molybdenum as raw materials, adopting a co-firing multilayer ceramic process to prepare a ceramic part, and obtaining a ceramic part semi-finished product after chemical nickel plating;
(5) And (3) rack-loading brazing: assembling the metal surrounding frame (2), the brazing material (3) and the porcelain semi-finished product together by utilizing a graphite die; putting the assembled graphite mold into a high-temperature brazing furnace to be brazed into a whole, so as to obtain a semi-finished product of the shell base;
(6) Plating nickel and gold on a shell base: comprising the steps of (a) a step of,
(6.1) depositing electroless nickel gold on the shell base semi-finished product in the area of the shell by a chemical replacement method;
(6.2) coating the photoresist with the ceramic Bao Jinou (5) by spraying or dispensing, drying and curing;
(6.3) connecting the islands of the thick gold region (7) through gold wire bonding, and electroplating nickel gold on the thick gold region through an electroplating method;
and (6.4) removing the photoresist coated on the thin gold area (5) in the tube shell to finish the coating of all areas of the tube shell.
7. The method of manufacturing a SIP ceramic shell structure based on HTCC process according to claim 6, wherein in step (4), the maximum temperature is controlled to 1450-1650 ℃ under specific sintering curve and atmosphere conditions.
8. The method of manufacturing a SIP ceramic shell structure based on HTCC process according to claim 6, wherein in step (5), the high temperature zone temperature is set to 790-820 ℃ and the chain speed is set to 150-200mm/min under specific brazing curve conditions.
9. The manufacturing method of the SIP ceramic shell structure based on the HTCC process according to claim 6, wherein in the step (6), the thick-gold area (7) nickel-gold electroplating process is characterized in that a shell semi-finished product to be plated is deoiled in an alkaline deoiling agent of 50g/L at 60 ℃ for 5-8 min, cleaned for 3-9 min, and then cleaned in a solution containing sodium hydroxide, OP emulsifier and trisodium metaphosphate at 55 ℃ for 2-3 min; the temperature of the nickel plating tank is controlled to be 30-35 ℃, the time is controlled to be 2-3 min, the temperature of the gold plating tank is controlled to be 60-65 ℃ and the time is controlled to be 20-30 min.
10. The method of manufacturing a SIP ceramic shell structure based on HTCC process according to claim 6, wherein the thickness of the nickel layer of the shell is 1.3 μm to 8.9 μm and the thickness of the plating layer of the thick gold region is 1.3 μm to 5.7 μm. The thickness of the coating of Bao Jinou is 0.03-0.3 mu m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311620809.XA CN117727701A (en) | 2023-11-30 | 2023-11-30 | SIP ceramic shell structure based on HTCC technology and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311620809.XA CN117727701A (en) | 2023-11-30 | 2023-11-30 | SIP ceramic shell structure based on HTCC technology and manufacturing method |
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| Publication Number | Publication Date |
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| CN117727701A true CN117727701A (en) | 2024-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311620809.XA Pending CN117727701A (en) | 2023-11-30 | 2023-11-30 | SIP ceramic shell structure based on HTCC technology and manufacturing method |
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| Country | Link |
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| CN (1) | CN117727701A (en) |
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- 2023-11-30 CN CN202311620809.XA patent/CN117727701A/en active Pending
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