CN117723794A - Shallow-indentation reducing semiconductor test probe and assembly method thereof - Google Patents

Shallow-indentation reducing semiconductor test probe and assembly method thereof Download PDF

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Publication number
CN117723794A
CN117723794A CN202311731099.8A CN202311731099A CN117723794A CN 117723794 A CN117723794 A CN 117723794A CN 202311731099 A CN202311731099 A CN 202311731099A CN 117723794 A CN117723794 A CN 117723794A
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CN
China
Prior art keywords
needle
indentation
test
test probe
shallow
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CN202311731099.8A
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Chinese (zh)
Inventor
陈金荣
申啸
贺海洋
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Muwangxin Suzhou Semiconductor Technology Co ltd
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Muwangxin Suzhou Semiconductor Technology Co ltd
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Application filed by Muwangxin Suzhou Semiconductor Technology Co ltd filed Critical Muwangxin Suzhou Semiconductor Technology Co ltd
Priority to CN202311731099.8A priority Critical patent/CN117723794A/en
Publication of CN117723794A publication Critical patent/CN117723794A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a semiconductor test probe with shallow indentation, which comprises a needle tube, wherein an elastic piece is arranged in the needle tube, one end of the needle tube is provided with a test end needle shaft in a telescopic manner, the extending end of the test end needle shaft is provided with a test needle head, the outer diameter of the test needle head is larger than that of the test end needle shaft, the other end of the needle tube is provided with a connecting end needle shaft in a telescopic manner, and the extending end of the connecting end needle shaft is provided with a connecting needle head. The semiconductor test probe with shallow indentation has the advantages that the problem that the needle shaft can leave an indentation at the contact position of a tested object in the test process of the conventional semiconductor test probe, and the subsequent test stability of the tested object can be influenced by the indentation depth is solved.

Description

Shallow-indentation reducing semiconductor test probe and assembly method thereof
Technical Field
The invention belongs to the technical field of semiconductor detection, and particularly relates to a small-indentation variable-diameter semiconductor test probe and an assembly method of the small-indentation variable-diameter semiconductor test probe.
Background
The semiconductor test probe is used for evaluating the electrical characteristics of an integrated circuit, a flat panel display and the like of a semiconductor element, and is widely applied to the technical fields of mobile phones, automobiles, medical treatment and aerospace by conducting power-on inspection and insulation inspection. As electronic devices become smaller and thinner, smaller test probes are required to match with actual demands of markets, so that higher requirements are put on the precision of the test probes, and the probe industry faces a great challenge.
The structure of the semiconductor test probe is generally composed of a needle shaft, a needle tube and a spring, wherein the needle shaft and the spring are assembled in the needle tube, and the needle tube forms a stable integral structure in the needle tube by using a compression riveting way. When the needle is used, the spring is compressed towards the inside of the needle tube under the action of the stress of the needle shaft, and the elastic force generated by the spring acts on the needle shaft, so that the needle shaft is in good contact with the spring, and then a test is performed.
However, in the testing process of the conventional semiconductor test probe, an indentation is reserved on the contact position of the tested object by the needle shaft, and the indentation depth influences the subsequent testing stability.
Disclosure of Invention
The invention provides a semiconductor test probe with shallow indentation, which solves the problem that the needle shaft can leave an indentation at the contact position of a tested object in the test process of the conventional semiconductor test probe, and the indentation depth can influence the subsequent test stability of the tested object.
In order to solve the technical problems, the invention discloses a semiconductor test probe with shallow indentation, which comprises a needle tube, wherein an elastic piece is arranged in the needle tube, one end of the needle tube is provided with a test end needle shaft in a telescopic manner, the extending end of the test end needle shaft is provided with a test needle head, the outer diameter of the test needle head is larger than that of the test end needle shaft, the other end of the needle tube is provided with a connecting end needle shaft in a telescopic manner, and the extending end of the connecting end needle shaft is provided with a connecting needle head.
The technical scheme of the invention also has the following characteristics:
as a preferable mode of the present invention, the elastic member is a spring.
As a preferred embodiment of the present invention, the spring is a compression spring.
As a preferable scheme of the invention, the extending end of the needle shaft at the test end and the extending end of the needle shaft at the connection end are both provided with limiting steps, the two ends of the needle tube are provided with necking, and the outer diameter of the limiting steps is smaller than the inner diameter of the necking.
The invention provides an assembly method of a semiconductor test probe with shallow indentation, which solves the problem that the needle shaft can leave an indentation at the contact position of a tested object in the test process of the conventional semiconductor test probe, and the indentation depth can influence the subsequent test stability of the tested object.
In order to solve the technical problems, the invention discloses an assembly method of a semiconductor test probe with shallow indentation and variable diameter, which is implemented according to the following steps:
step 1, designing a die, wherein a plurality of step holes are formed in the die, a variable-diameter semiconductor test probe with shallow indentation is arranged in each step hole, and a test needle head of the variable-diameter semiconductor test probe with shallow indentation extends out of a small hole of the step hole;
step 2, arranging a push plate on the punching side of the step hole of the die;
and 3, pushing the variable-diameter semiconductor test probe with shallow indentation by using a push plate to move to be in contact with the tested object.
Compared with the prior art: according to the semiconductor test probe with shallow indentation, the radius of the head of the needle shaft at the test end is increased by changing the diameter, so that the needle shaft with a larger contact surface with the tested position can be processed more easily (namely, the radian of the head of the needle shaft at the test end is increased to enlarge the contact area), the stress surface is enlarged, and meanwhile, the force dispersion is more uniform, so that the problem that the test object is subjected to excessive indentation in the use process of the conventional semiconductor test probe, and finally the test result is influenced by the indentation is solved under the condition that the electrical performance of the test process is not influenced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a schematic diagram of a semiconductor test probe with shallow indentation;
FIG. 2 is a schematic diagram of a conventional test probe;
fig. 3 is a schematic structural diagram of a shallow-indentation variable-diameter semiconductor test probe according to the present invention when assembled and used.
In the figure: 1. the needle tube, 2, the test end needle shaft, 3, the test needle head, 4, the connection end needle shaft, 5, the connection needle head, 6, the mould, and 7, the step hole.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
Example 1
As shown in fig. 1, the semiconductor test probe with shallow indentation comprises a needle tube 1, an elastic piece is arranged in the needle tube 1, one end of the needle tube 1 is provided with a test end needle shaft 2 in a telescopic manner, the extending end of the test end needle shaft 2 is provided with a test needle head 3, the outer diameter of the test needle head 3 is larger than that of the test end needle shaft 2, the other end of the needle tube 1 is provided with a connecting end needle shaft 4 in a telescopic manner, and the extending end of the connecting end needle shaft 4 is provided with a connecting needle head 5.
The elastic member is preferably a compression spring.
When the device works, the connecting needle head 5 is connected with the testing instrument, the testing needle head 3 is connected with a tested object, and the tested object can be subjected to relevant performance testing after being connected.
With reference to fig. 2, increasing the arc of the semi-circular head of the needle can effectively reduce the indentation depth in the testing process of the semiconductor test probe. The common semicircular head type probe needle head is limited by processing, the general radian R is slightly larger than the radius of the needle shaft (for example, the diameter phi of the needle shaft is 0.15, the radian R of the head of the needle shaft is more than or equal to 0.075), and the measured indentation depth is approximately equal to 0.02mm. The diameter-variable probe increases the diameter of the head of the needle shaft due to diameter variation, the processing space is enlarged, and the probe with larger radian R of the head of the needle shaft is easier to process (the outer diameter phi is 0.22 after diameter variation is actually measured, and the radian R of the needle head can be R approximately equal to 0.18). The contact area is enlarged by enlarging the head R, the energizing area is enlarged, and the resistance is more stable. The contact surface becomes larger, the stress surface becomes larger, the average stress becomes smaller, the indentation depth is reduced, and the measured indentation depth is approximately equal to 0.005mm.
Example 2
As shown in fig. 1, in the semiconductor test probe with shallow indentation, the extending end of the test end needle shaft 2 and the extending end of the connecting end needle shaft 4 are both provided with limiting steps, two ends of the needle tube 1 are formed with necking, and the outer diameter of the limiting steps is smaller than the inner diameter of the necking.
Through the design of necking and spacing step, can accomplish the scalable assembly of test end needle shaft 2 and link end needle shaft 4 in the needle tubing through simple structure and cost.
Example 3
As shown in fig. 1, the method for assembling the semiconductor test probe with shallow indentation of the present invention is characterized by comprising the following steps:
step 1, designing a die 6, forming a plurality of step holes 7 in the die 6, mounting a small-indentation variable-diameter semiconductor test probe in each step hole 7, and extending a test needle of the small-indentation variable-diameter semiconductor test probe out of a small hole of the step hole 7;
step 2, arranging a push plate on the punching side of the step hole of the die 6;
and 3, pushing the variable-diameter semiconductor test probe with shallow indentation by using a push plate to move to be in contact with the tested object.
It should be noted that, a common test probe may be placed in some step holes 7 of the mold, and the test may be performed on the same test object together with the test probe of the present invention, so that the trace left may be observed, and the trace depth of the test probe of the present invention is significantly smaller.
Thus, compared with the prior art: according to the semiconductor test probe with shallow indentation, the radius of the head of the needle shaft at the test end is increased by changing the diameter, so that the needle shaft with a larger contact surface with the tested position can be processed more easily (namely, the radian of the head of the needle shaft at the test end is increased to enlarge the contact area), the stress surface is enlarged, and meanwhile, the force dispersion is more uniform, so that the problem that the test object is subjected to excessive indentation in the use process of the conventional semiconductor test probe, and finally the test result is influenced by the indentation is solved under the condition that the electrical performance of the test process is not influenced.
While the foregoing description illustrates and describes several preferred embodiments of the invention, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as limited to other embodiments, and is capable of use in various other combinations, modifications and environments and is capable of changes or modifications within the spirit of the invention described herein, either as a result of the foregoing teachings or as a result of the knowledge or skill of the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.

Claims (5)

1. The utility model provides a reducing semiconductor test probe that indentation is shallow, its characterized in that, includes needle tubing (1), be provided with the elastic component in needle tubing (1), the one end of needle tubing (1) is provided with test end needle shaft (2) telescopically, the extension end of test end needle shaft (2) is provided with test needle head (3), the external diameter of test needle head (3) is greater than the external diameter of test end needle shaft (2), the other end of needle tubing (1) is provided with link needle shaft (4) telescopically, the extension end of link needle shaft (4) is formed with link needle head (5).
2. The shallow-indentation diameter semiconductor test probe of claim 1, wherein the resilient member is a spring.
3. The shallow-indentation variable diameter semiconductor test probe of claim 2, wherein the spring is a compression spring.
4. The semiconductor test probe with shallow indentation as claimed in claim 3, wherein the extending end of the test end needle shaft (2) and the extending end of the connection end needle shaft (4) are provided with limit steps, two ends of the needle tube (1) are formed with shrinkage openings, and the outer diameter of the limit steps is smaller than the inner diameter of the shrinkage openings.
5. A method of assembling a shallow-indentation variable diameter semiconductor test probe as recited in claim 4, comprising the steps of:
step 1, designing a die (6), wherein a plurality of step holes (7) are formed in the die (6), a small-indentation variable-diameter semiconductor test probe is arranged in each step hole (7), and a test needle head of the small-indentation variable-diameter semiconductor test probe extends out of a small hole of the step hole (7);
step 2, arranging a push plate on the punching side of the step hole of the die (6);
and 3, pushing the variable-diameter semiconductor test probe with shallow indentation by using a push plate to move to be in contact with the tested object.
CN202311731099.8A 2023-12-15 2023-12-15 Shallow-indentation reducing semiconductor test probe and assembly method thereof Pending CN117723794A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311731099.8A CN117723794A (en) 2023-12-15 2023-12-15 Shallow-indentation reducing semiconductor test probe and assembly method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311731099.8A CN117723794A (en) 2023-12-15 2023-12-15 Shallow-indentation reducing semiconductor test probe and assembly method thereof

Publications (1)

Publication Number Publication Date
CN117723794A true CN117723794A (en) 2024-03-19

Family

ID=90206530

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311731099.8A Pending CN117723794A (en) 2023-12-15 2023-12-15 Shallow-indentation reducing semiconductor test probe and assembly method thereof

Country Status (1)

Country Link
CN (1) CN117723794A (en)

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