CN117712253A - Deep ultraviolet light-emitting diode and preparation method thereof - Google Patents
Deep ultraviolet light-emitting diode and preparation method thereof Download PDFInfo
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Abstract
The invention provides a deep ultraviolet light-emitting diode and a preparation method thereof, wherein the deep ultraviolet light-emitting diode comprises a substrate, and a buffer layer, an undoped GaN layer, a composite n-type GaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially deposited on the substrate; wherein the composite n-type GaN layer comprises a composite layer and an n-type InGaN layer which are sequentially deposited on the undoped GaN layer, and the composite layer comprises Si which is alternately deposited on the undoped GaN layer according to a preset period 3 N 4 Layer, n-type AlGaN layer, inN layer. The composite n-type GaN layer can prevent dislocation from extending to the epitaxial layer, improve the crystal quality of the epitaxial layer, and reduce the electric leakage and non-radiative recombination of the light-emitting diode.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a deep ultraviolet light-emitting diode and a preparation method thereof.
Background
The GaN-based LED technology is a key technology for realizing semiconductor illumination, and the GaN-based deep ultraviolet LED has high white light conversion efficiency and has important application in the aspects of medical treatment, purification and the like; the growth of high Al composition AlGaN materials required for preparing deep ultraviolet LEDs has been a key factor limiting device development. Compared with the growth of a GaN film on a substrate, the difficulty of growing a high-quality AlGaN film is greater, and a large number of defects often exist in the AlGaN film.
The existing AlGaN material growth has the following difficulties, firstly, because the lattice constant of AlGaN and the Al component form a linear relation, the lattice mismatch between the AlGaN film and the substrate can be increased along with the increase of the Al component, and the stress generated by the mismatch can be released by generating dislocation, so that a large number of dislocations are finally generated. Second, alGaN forms high density islands during nucleation growth, which results in subsequent nucleation islands merging to produce a large number of dislocations, degrading the crystal quality of the AlGaN epitaxial layer and even causing cracking of the AlGaN epitaxial layer film.
Disclosure of Invention
Based on the above, the present invention is directed to a deep ultraviolet light emitting diode and a method for manufacturing the same, so as to solve the problems in the prior art.
The invention provides a deep ultraviolet light-emitting diode, which is characterized by comprising a substrate, and a buffer layer, an undoped GaN layer, a composite n-type GaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially deposited on the substrate;
wherein the composite n-type GaN layer comprises a composite layer and an n-type InGaN layer which are sequentially deposited on the undoped GaN layer, the composite layer comprises M periodic structures, and the periodic structures comprise Si which are alternately deposited on the undoped GaN layer 3 N 4 Layer, n-type AlGaN layer, inN layer.
The beneficial effects of the invention are as follows: the invention provides a deep ultraviolet light emitting diode, si 3 N 4 The layer can block dislocation from extending to the epitaxial layer, improve the crystal quality of the epitaxial layer, and reduce the electric leakage and non-radiative recombination of the light-emitting diode; the n-type AlGaN layer can provide light for the LEDSufficient electrons and improved luminous efficiency of the LED. The thermal stress accumulated by the GaN epitaxial layer can be released due to the low deposition temperature of the InN layer, the lattice constant of the InN is larger than that of AlGaN, and tensile stress is introduced, so that the polarization effect of the multiple quantum well layers is reduced. The composite layer blocks dislocation for many times through the periodic structure, improves the crystal quality of the epitaxial layer, reduces the electric leakage of the light-emitting diode, and the compressive stress and the tensile stress are alternately changed, so that the stress of the epitaxial layer is released, the polarization effect of the multiple quantum well layers is reduced, and the luminous efficiency of the light-emitting diode is improved. The n-type InGaN layer forms a potential well layer after the composite layer with the overlapped structure, so that electrons can be slowed down to flow to the active layer, the electrons are uniformly distributed in the active layer, and the radiation recombination efficiency of the electrons and holes in the active layer is improved.
Preferably, the value range of M in the composite layer is 1-100.
Preferably, the Si 3 N 4 The thickness of the InN layer is 1 nm-10 nm, and the thickness of the InN layer is 0.5 nm-5 nm.
Preferably, the thickness of the n-type AlGaN layer is 10 nm-500 nm, the Al composition is 0.1-0.9, the Si doping is adopted, and the Si doping concentration is 1E+19atoms/cm 3 ~1E+20 atoms/cm 3 。
Preferably, the thickness of the n-type InGaN layer is 1 nm-10 nm, the in composition is 0.01-0.5, the Si doping is adopted, and the Si doping concentration is 1E+17atoms/cm 3 ~1E+19atoms/cm 3 。
The invention also provides a preparation method for preparing the deep ultraviolet light-emitting diode, which comprises the following steps:
providing a substrate;
sequentially depositing a buffer layer, an undoped GaN layer, a composite n-type GaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer on the substrate;
wherein the composite n-type GaN layer comprises a composite layer and an n-type InGaN layer which are sequentially deposited on the undoped GaN layer, the composite layer comprises M periodic structures, and the periodic structures comprise Si which are alternately deposited on the undoped GaN layer 3 N 4 Layer, n-type AlGaN layer, inN layer.
Preferably, the Si 3 N 4 The deposition temperature of the layer is 900-1100 ℃, the pressure is 50-300 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b).
Preferably, the deposition temperature of the N-type AlGaN layer is 1100-1300 ℃, the pressure is 50-300 torr, and the deposition growth atmosphere is N 2 / H 2 /NH 3 Is a mixed gas of (a) and (b).
Preferably, the deposition temperature of the InN layer is 800-1000 ℃, the pressure is 50-300 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b).
Preferably, the deposition temperature of the N-type InGaN layer is 800-1000 ℃, the pressure is 50-300 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b).
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic diagram of a deep ultraviolet LED according to the present invention;
fig. 2 is a flowchart of a method for manufacturing a deep ultraviolet light emitting diode according to the present invention.
Description of main reference numerals:
10. a substrate; 20. a buffer layer; 30. an undoped GaN layer; 40. compounding the n-type GaN layer; 41. a composite layer; 411. si (Si) 3 N 4 A layer; 412. an n-type AlGaN layer; 413. an InN layer; 42. an n-type InGaN layer; 50. an active layer; 60. an electron blocking layer; 70. a P-type AlGaN layer; 80. and a P-type contact layer.
The invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing alternative embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The invention provides a deep ultraviolet light-emitting diode, which comprises a substrate, and a buffer layer, an undoped GaN layer, a composite n-type GaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially deposited on the substrate; wherein the composite n-type GaN layer comprises a composite layer and an n-type InGaN layer which are sequentially deposited on the undoped GaN layer, the composite layer comprises M periodic structures, and the periodic structures comprise Si which is alternately deposited on the undoped GaN layer 3 N 4 Layer, n-type AlGaN layer, inN layer. The composite n-type GaN layer can prevent dislocation from extending to the epitaxial layer, improve the crystal quality of the epitaxial layer, and reduce the electric leakage and non-radiative recombination of the light-emitting diode.
Optionally, referring to fig. 1, the deep ultraviolet light emitting diode provided in the embodiment of the present invention includes a substrate 10, and a buffer layer 20, an undoped GaN layer 30, a composite n-type GaN layer 40, an active layer 50, an electron blocking layer 60, a P-type AlGaN layer 70, and a P-type contact layer 80 sequentially deposited on the substrate 10; wherein the composite n-type GaN layer 40 comprises a composite layer 41 and an n-type InGaN layer 42 sequentially deposited on the undoped GaN layer 30, the composite layer 41 comprises M periodic structures including Si alternately deposited on the undoped GaN layer 30 3 N 4 Layers 411, nA type AlGaN layer 412, an InN layer 413.
Alternatively, the substrate 10 may be one of a (0001) plane sapphire substrate, an AlN substrate, a Si (111) substrate, and a SiC (0001) substrate; the silicon substrate has the advantages of large size, low price, simple thinning processing technology, low epitaxial growth cost and great advantages compared with a blue stone substrate with large hardness, poor thermal conductivity and poor electrical conductivity, so that the silicon substrate is selected. However, the surface of the silicon substrate has very large defects, and the defects of the epitaxial layer deposited directly on the substrate are easy to extend to the active layer, the active layer is the active layer of the light emitting diode, and the defects extending to the active layer directly affect the light emitting effect, therefore, before the epitaxial layer is deposited on the substrate, the buffer layer 20 is required to be deposited on the substrate 10 to reduce the defects on the surface of the silicon substrate to a certain extent, alternatively, the buffer layer 20 can be an AlN buffer layer with the thickness of 20 nm-200 nm, and preferably, the buffer layer 20 is 100nm.
The undoped GaN layer 30 is deposited on the buffer layer 20, the thickness of the undoped GaN layer 30 is 1-5 μm, and the thicker undoped GaN layer 30 can reduce the effective release of the compressive stress between the light emitting diodes, improve the crystal quality and reduce the reverse leakage. However, the increase of the GaN layer thickness consumes a large amount of Ga source material, which greatly increases the epitaxial cost of a Light Emitting Diode (LED), so further, in order to achieve both the quality and the production cost of the LED, it is preferable that the thickness of the undoped GaN layer 30 is 2 μm to 3 μm.
The main function of the composite n-type GaN layer 40 in the LED is to further reduce defects between crystals and provide enough electrons for the LED to emit light and to allow the electrons to smoothly move to the active layer 50, and to undergo radiative recombination with holes in the active layer 50; further reducing the defect of the crystal can improve the quality of the crystal, providing enough electrons to be combined with holes in the active layer can effectively improve the overall luminous efficiency of the LED, and the more electrons and holes are combined in radiation, the better the luminous effect of the LED is.
Alternatively, the composite n-type GaN layer 40 includes a composite layer 41 and an n-type InGaN layer 42 sequentially deposited on the undoped GaN layer 30, the composite layer 41 including Si alternately deposited on the undoped GaN layer 30 at a predetermined period 3 N 4 Layer 411, n-type AlGaN layer 412, inN layer 413; preferably, si 3 N 4 The deposition period of the multi-period overlapped structure formed by the layer 411, the n-type AlGaN layer 412 and the InN layer 413 is 1-100, dislocation is blocked for many times through the periodic structure, the crystal quality of the epitaxial layer is improved, the electric leakage of the light-emitting diode is reduced, the compression stress and the tensile stress are alternately changed, the stress of the epitaxial layer is released, the polarization effect of the active layer is reduced, and the luminous efficiency of the light-emitting diode is improved.
Further, si is deposited on the undoped GaN layer 30 3 N 4 The thickness of layer 411 is 1nm to 10nm, si 3 N 4 The layer can block dislocation from extending to the epitaxial layer, improve the crystal quality of the epitaxial layer, and reduce the electric leakage and non-radiative recombination of the light-emitting diode.
The n-type AlGaN layer 412 has a thickness of 10 nm-500 nm, an Al composition of 0.1-0.9, and is doped with Si at a concentration of 1E+19atoms/cm 3 ~1E+20 atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the Firstly, the n-type AlGaN layer 412 provides sufficient electrons for LED light emission by doping Si to realize n-type doping, and secondly, the resistivity of the n-type AlGaN layer 412 is higher than that of the transparent electrode on the P-type contact layer 80, so that the sufficient Si doping can effectively reduce the resistivity of the n-type AlGaN layer and improve the light emitting efficiency of the LED.
The thickness of the InN layer 413 is 0.5 nm-5 nm, the deposition growth temperature of the InN layer 413 is low, the thermal stress accumulated by the GaN epitaxial layer can be released, the lattice constant of InN is larger than that of AlGaN, and tensile stress is introduced, so that the polarization effect of the active layer is reduced.
The n-type InGaN layer 42 has a thickness of 1nm to 10nm, an in composition of 0.01 to 0.5, and is doped with Si having a doping concentration of 1E+17atoms/cm 3 ~1E+19atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The n-type InGaN layer 42 forms a potential well layer after the composite layer with the overlapped structure, so that electrons can be slowed down to flow to the active layer 50, the electrons can be uniformly distributed in the active layer 50, and a small amount of doped Si can uniformly inject the electrons into the active layer 50, so that the radiation recombination efficiency of the electrons and the holes in the active layer 50 is improved.
Alternatively, the active layer 50 includes alternately deposited Al x Ga 1-x N quantum well layer and Al y Ga 1-y N quantum barrier layer, stacking periodThe number is 3 to 15, al x Ga 1-x Al component in the N quantum well layer is 0.2-0.6, al y Ga 1-y The Al component in the N quantum barrier layer is 0.4-0.8; the active layer 50 is an electron and hole recombination region, and the reasonable structural design can significantly increase the overlapping degree of the electron and hole wave functions, so that the luminous efficiency of the LED device is improved.
The electron blocking layer 60 is an AlGaN electron blocking layer, the thickness is 10 nm-100 nm, the growth temperature is 1000-1100 ℃, the pressure is 100-300 torr, and the Al component is 0.4-0.8; the electron blocking layer 60 can not only effectively limit electron overflow, but also reduce blocking of holes, improve injection efficiency of holes into the quantum well, reduce carrier auger recombination, and improve luminous efficiency of the light emitting diode. The thickness of the P-type AlGaN layer 70 is 20 nm-200 nm, the growth temperature is 1000-1100 ℃, the pressure is 100-300 torr, and the doping concentration of Mg is 1E+19atoms/cm 3 ~5E+20 atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the Too high Mg doping concentration can damage crystal quality, while lower doping concentration can affect hole concentration; meanwhile, the P-type doped AlGaN layer can effectively fill up the epitaxial layer to obtain the deep ultraviolet LED epitaxial wafer with a smooth surface. The thickness of the P-type contact layer 80 is 5-50 nm, the growth temperature is 900-1100 ℃, the pressure is 100-600 torr, and the doping concentration of Mg is 1E+19atoms/cm 3 ~1E+21 atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The P-type contact layer is a P-type GaN contact layer, and the P-type contact layer with high doping concentration is beneficial to reducing contact resistance.
In the present embodiment, a deep ultraviolet light emitting diode, si, is provided 3 N 4 The layer 411 can block dislocation from extending to the epitaxial layer, improve the crystal quality of the epitaxial layer, and reduce the electric leakage and non-radiative recombination of the light-emitting diode; the n-type AlGaN layer 412 provides sufficient electrons for LED light emission by doping Si to realize n-type doping, and the resistivity of the n-type AlGaN layer 412 is higher than that of the transparent electrode on the P-type contact layer 80, so that the sufficient Si doping can effectively reduce the resistivity of the n-type AlGaN layer and improve the light emitting efficiency of the LED. The thermal stress accumulated by the GaN epitaxial layer can be released due to the low deposition temperature of the InN layer, the lattice constant of the InN is larger than that of AlGaN, and tensile stress is introduced, so that the polarization effect of the multiple quantum well layers is reduced. The composite layer 41 passes through the periodic structure a plurality of timesThe dislocation is blocked, the crystal quality of the epitaxial layer is improved, the electric leakage of the light-emitting diode is reduced, the compressive stress and the tensile stress are alternately changed, the stress of the epitaxial layer is released, the polarization effect of the multi-quantum well layer is reduced, and the light-emitting efficiency of the light-emitting diode is improved. The n-type InGaN layer forms a potential well layer after the composite layer with the overlapped structure, so that electrons can be slowed down to flow to the active layer, the electrons are uniformly distributed in the active layer, a small amount of doped Si can uniformly inject the electrons into the active layer, and the radiation recombination efficiency of the electrons and holes in the active layer is improved.
Referring to fig. 2, a method for manufacturing a deep ultraviolet light emitting diode according to an embodiment of the present invention is used for manufacturing the deep ultraviolet light emitting diode, and optionally, the method for manufacturing a deep ultraviolet light emitting diode according to the present invention includes steps S10 to S90.
Step S10, providing a substrate;
alternatively, the substrate 10 may be one of a (0001) plane sapphire substrate, an AlN substrate, a Si (111) substrate, and a SiC (0001) substrate; the silicon substrate has the advantages of large size, low price, simple thinning processing technology, low epitaxial growth cost and great advantages compared with a blue stone substrate with large hardness, poor thermal conductivity and poor electrical conductivity, so that the silicon substrate is selected.
Step S20, depositing a buffer layer on a substrate;
alternatively, physical vapor deposition (Physical Vapor Deposition, PVD) may be used to deposit a buffer layer on the substrate, where the thickness of the buffer layer is 20nm to 200nm, and in this embodiment, an AlN buffer layer is used to provide a nucleation center with the same orientation as the substrate, which releases stress generated by lattice mismatch between the epitaxial GaN material and the substrate and thermal stress generated by thermal expansion coefficient mismatch, providing a flat nucleation surface for epitaxial growth, reducing the contact angle of the nucleation growth to enable the island-shaped GaN grains to be connected to form a plane in a smaller thickness, converting into two-dimensional epitaxial growth, improving the crystal quality of the subsequently deposited epitaxial layer, reducing dislocation density, and improving the radiation recombination efficiency of the active layer.
Step S30, preprocessing the substrate on which the buffer layer is deposited.
Specifically, the silicon substrate on which the buffer layer has been deposited is transferred to a Metal organic vapor deposition (MOCVD) device, wherein high purity H can be used in the MOCVD device 2 (Hydrogen), high purity N 2 (Nitrogen) high purity H 2 And high purity N 2 Is used as carrier gas, high-purity NH 3 As N source, trimethylgallium (TMGa) and triethylgallium (TEGa) as gallium source, trimethylindium (TMIn) as indium source, trimethylaluminum (TMAL) as aluminum source, silane (SiH) 4 ) As an N-type dopant, magnesium dicyclopentadiene (CP 2 Mg) as P-type dopant.
Optionally, the substrate on which the buffer layer has been deposited is subjected to a treatment in H 2 The atmosphere is treated for 1-10 min, the treatment temperature is 1000-1200 ℃, and then nitriding treatment is carried out on the GaN epitaxial layer, so that the crystal quality of the buffer layer is improved, and the crystal quality of the GaN epitaxial layer deposited subsequently can be effectively improved.
In step S40, an undoped GaN layer is deposited on the buffer layer.
After nitriding the substrate on which the buffer layer is deposited, depositing an undoped GaN layer in MOCVD equipment by adopting high-purity NH 3 As an N source, trimethylgallium (TMGa) and triethylgallium (TEGa) as a gallium source; the growth temperature of the undoped GaN layer is 1000-1300 ℃, the pressure is 50-500 torr, and the thickness is 1-5 mu m; preferably, the growth temperature of the undoped GaN layer is 1200 ℃, the pressure is 100 torr, the growth temperature of the undoped GaN layer is higher, the pressure is lower, the quality of the prepared GaN crystal is better, along with the increase of the thickness of GaN, the compressive stress in the undoped GaN layer can be released through stacking faults, the line defect is reduced, the quality of the crystal is improved, the reverse leakage current is reduced, but the consumption of Ga source materials is larger by improving the thickness of the GaN layer, the epitaxial cost of an LED is greatly improved, and preferably, the growth thickness of the undoped GaN layer is 2-3 mu m, the production cost is saved, and the GaN material has higher crystal quality.
And S50, depositing a composite n-type GaN layer on the undoped GaN layer.
Optionally, after depositing the undoped GaN layer, continuing the deposition in the MOCVD apparatusThe composite n-type GaN layer, optionally, the composite n-type GaN layer comprises a composite layer and an n-type InGaN layer which are sequentially deposited on the undoped GaN layer, and the composite layer comprises Si which is alternately deposited on the undoped GaN layer according to a preset period 3 N 4 Layer, n-type AlGaN layer, inN layer.
Si 3 N 4 The thickness of the layer is 1 nm-10 nm, si 3 N 4 The deposition temperature of the layer is 900-1100 ℃, the pressure is 50-300 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b).
The thickness of the n-type AlGaN layer is 10 nm-500 nm, the Al component is 0.1-0.9, the Si doping is adopted, and the Si doping concentration is 1E+19atoms/cm 3 ~1E+20 atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The deposition temperature of the N-type AlGaN layer is 1100-1300 ℃, the pressure is 50-300 torr, and the deposition growth atmosphere is N 2 / H 2 /NH 3 Is a mixed gas of (a) and (b).
The thickness of the InN layer is 0.5 nm-5 nm, the deposition temperature of the InN layer is 800-1000 ℃, the pressure is 50-300 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b). The deposition temperature of the InN layer is low, the thermal stress accumulated by the GaN epitaxial layer can be released by the low-temperature InN layer, the lattice constant of InN is larger than that of AlGaN, tensile stress is introduced, and the polarization effect of the active layer is reduced.
The thickness of the n-type InGaN layer is 1 nm-10 nm, the in component is 0.01-0.5, si is doped, and the doping concentration of Si is 1E+17atoms/cm 3 ~1E+19atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The deposition temperature of the N-type InGaN layer is 800-1000 ℃, the pressure is 50-300 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b).
Step S60, depositing an active layer on the composite n-type GaN layer.
Alternatively, the active layer 50 includes alternately deposited Al x Ga 1-x N quantum well layer and Al y Ga 1-y N quantum barrier layer, stacking cycle number of 3-15, al x Ga 1-x The growth temperature of the N quantum well layer is 950-1150 ℃, the thickness is 2-nm-5 nm, the pressure is 50-300 torr, the Al component is 0.2-0.6, and the Al component is y Ga 1-y The growth temperature of the N quantum barrier layer is 1000-1300 ℃ and the thickness is 5 nm-15nm, a pressure of 50-300 torr, and an Al component of 0.4-0.8.
In step S70, an electron blocking layer is deposited on the active layer.
The electron blocking layer 60 is an AlGaN electron blocking layer, the thickness is 10 nm-100 nm, the growth temperature is 1000-1100 ℃, the pressure is 100-300 torr, and the Al component is 0.4-0.8.
In step S80, a P-type AlGaN layer is deposited on the electron blocking layer.
The thickness of the P-type AlGaN layer is 20 nm-200 nm, the growth temperature is 1000-1100 ℃, the pressure is 100-300 torr, and the doping concentration of Mg is 1E+19atoms/cm 3 ~5E+20 atoms/cm 3 。
Step S90, a P-type contact layer is deposited on the P-type AlGaN layer.
The thickness of the P-type contact layer is 5-50 nm, the growth temperature is 900-1100 ℃, the pressure is 100-600 torr, and the doping concentration of Mg is 1E+19atoms/cm 3 ~1E+21 atoms/cm 3 。
Example 1
In the embodiment, a silicon substrate is used. The period of alternate deposition of the composite layer is 20, si 3 N 4 The thickness of the layer is 1nm, the deposition temperature is 900 ℃, the pressure is 50 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b). The thickness of the n-type AlGaN layer is 10nm, the Al component is 0.7, the Si doping is adopted, and the Si doping concentration is 1E+19atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The deposition temperature is 1100 ℃, the pressure is 50 torr, and the deposition growth atmosphere is N 2 / H 2 /NH 3 Is a mixed gas of (a) and (b). The thickness of the InN layer is 3.5 nm; the deposition temperature is 850 ℃, the pressure is 150 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b). The n-type InGaN layer has a thickness of 3.5 nm, an in composition of 0.01, and is doped with Si at a concentration of 1E+17atoms/cm 3 . The deposition temperature is 800 ℃, the pressure is 50 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b).
Example 2
This example differs from example 1 in that in this example the period of alternate deposition of the composite layer is 1, si 3 N 4 The thickness of the layer was 6.5nm, the deposition temperature was 1000℃and the pressure was 150 torr. The thickness of the n-type AlGaN layer is 100nm, the Al component is 0.1, the Si doping is adopted, and the Si doping concentration is 5E+19atoms/cm 3 . The deposition temperature was 1200℃and the pressure was 150 torr.
Example 3
This example differs from example 1 in that in this example the period of alternate deposition of the composite layer is 100, si 3 N 4 The thickness of the layer was 10nm, the deposition temperature was 1100℃and the pressure was 300 torr. The thickness of the n-type AlGaN layer is 500 nm, the Al component is 0.9, and the Si doping is adopted, and the Si doping concentration is 1E+20 atoms/cm 3 . The deposition temperature was 1300℃and the pressure was 300 torr.
Example 4
This example differs from example 1 in that in this example the period of alternate deposition of the composite layer is 35 and the thickness of the inn layer is 0.5nm; the deposition temperature is 800 ℃ and the pressure is 50-300 torr. The n-type InGaN layer has a thickness of 1nm, an in composition of 0.1, and is doped with Si with a Si doping concentration of 5E+17atoms/cm 3 . The deposition temperature was 850℃and the pressure was 150 torr.
Example 5
This example differs from example 1 in that in this example the period of alternate deposition of the composite layer is 60 and the thickness of the inn layer is 5nm; the deposition temperature was 1000℃and the pressure was 300 torr. The n-type InGaN layer has a thickness of 10nm, an in composition of 0.5, and is doped with Si at a concentration of 1E+19atoms/cm 3 . The deposition temperature was 1000℃and the pressure was 300 torr.
Comparative example 1
This comparative example differs from example 1 in that in this comparative example, no Si was deposited in the composite layer 3 N 4 The layers and the rest of the conditions were the same as in example 1.
Comparative example 2
This comparative example is different from example 1 in that in this comparative example, an n-type AlGaN layer is not deposited in the composite layer, and the other conditions are the same as example 1.
Comparative example 3
This comparative example is different from example 1 in that in this comparative example, the InN layer is not deposited in the composite layer, and the remaining conditions are the same as example 1.
Comparative example
The present comparative example is different from example 1 in that a conventional n-type GaN layer is deposited between an undoped GaN layer and an active layer in the present comparative example.
Referring to table 1, the results of comparing some parameters and corresponding optical enhancement of the above examples, comparative examples and comparative examples are shown.
TABLE 1
As can be seen from Table 1, the light-emitting diode provided by the invention has the advantage that the photoelectric efficiency is improved by 1.5% -3.3% compared with the light-emitting diode prepared by mass production at present.
It should be noted that the foregoing implementation procedure is only for illustrating the feasibility of the present application, but this does not represent that the deep ultraviolet light emitting diode of the present application has only a few implementation procedures, and instead, the present application may be incorporated into the feasible implementation of the deep ultraviolet light emitting diode of the present application as long as it can be implemented. In addition, in the embodiment of the present invention, the structural part of the deep ultraviolet light emitting diode corresponds to the part of the method for preparing the deep ultraviolet light emitting diode of the present invention, and the specific implementation details thereof are the same, which is not described herein.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The deep ultraviolet light-emitting diode is characterized by comprising a substrate, and a buffer layer, an undoped GaN layer, a composite n-type GaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially deposited on the substrate;
wherein the composite n-type GaN layer comprises a composite layer and an n-type InGaN layer which are sequentially deposited on the undoped GaN layer, the composite layer comprises M periodic structures, and the periodic structures comprise Si which are alternately deposited on the undoped GaN layer 3 N 4 Layer, n-type AlGaN layer, inN layer.
2. The deep ultraviolet light emitting diode of claim 1, wherein M in the composite layer has a value in the range of 1-100.
3. The deep ultraviolet light emitting diode of claim 1, wherein the Si 3 N 4 The thickness of the InN layer is 1 nm-10 nm, and the thickness of the InN layer is 0.5 nm-5 nm.
4. The deep ultraviolet light-emitting diode according to claim 1, wherein the n-type AlGaN layer has a thickness of 10 nm-500 nm, an Al composition of 0.1-0.9, and is doped with Si at a concentration of 1E+19atoms/cm 3 ~1E+20 atoms/cm 3 。
5. The deep ultraviolet light emitting diode of claim 1, wherein the n-type InGaN layer has a thickness of 1nm to 10nm and an in composition of 0.01 to 0.5, and is doped with SiThe concentration is 1E+17atoms/cm 3 ~1E+19atoms/cm 3 。
6. A method for manufacturing a deep ultraviolet light emitting diode according to any one of claims 1 to 5, comprising the steps of:
providing a substrate;
sequentially depositing a buffer layer, an undoped GaN layer, a composite n-type GaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer on the substrate;
wherein the composite n-type GaN layer comprises a composite layer and an n-type InGaN layer which are sequentially deposited on the undoped GaN layer, the composite layer comprises M periodic structures, and the periodic structures comprise Si which are alternately deposited on the undoped GaN layer 3 N 4 Layer, n-type AlGaN layer, inN layer.
7. The method according to claim 6, wherein the Si 3 N 4 The deposition temperature of the layer is 900-1100 ℃, the pressure is 50-300 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b).
8. The method of claim 6, wherein the N-type AlGaN layer is deposited at a temperature of 1100 ℃ to 1300 ℃ and a pressure of 50 torr to 300 torr in a deposition atmosphere of N 2 / H 2 /NH 3 Is a mixed gas of (a) and (b).
9. The method of claim 6, wherein the InN layer is deposited at a temperature of 800-1000 ℃ and a pressure of 50-300 torr in a deposition growth atmosphere of N 2 /NH 3 Is a mixed gas of (a) and (b).
10. The method of claim 6, wherein the N-type InGaN layer is deposited at a temperature of 800 ℃ to 1000 ℃ and a pressure of 50 torr to 300 torr, and the deposition growth atmosphere is N 2 /NH 3 Is a mixed gas of (a) and (b).
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