CN117674606A - Nationwide synchronous rectification and driving circuit suitable for GaN power device - Google Patents
Nationwide synchronous rectification and driving circuit suitable for GaN power device Download PDFInfo
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- CN117674606A CN117674606A CN202311448577.4A CN202311448577A CN117674606A CN 117674606 A CN117674606 A CN 117674606A CN 202311448577 A CN202311448577 A CN 202311448577A CN 117674606 A CN117674606 A CN 117674606A
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- 230000001360 synchronised effect Effects 0.000 title claims abstract description 21
- 238000012544 monitoring process Methods 0.000 claims abstract description 4
- 239000003990 capacitor Substances 0.000 claims description 27
- 230000000903 blocking effect Effects 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 230000010355 oscillation Effects 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 40
- 229910002601 GaN Inorganic materials 0.000 description 39
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/3353—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having at least two simultaneously operating switches on the input side, e.g. "double forward" or "double (switched) flyback" converter
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
Abstract
The invention provides a nationwide synchronous rectification and driving circuit suitable for a GaN power device, which comprises the following components: a voltage dividing circuit, a totem pole driving circuit, and a current monitoring and negative voltage generating circuit; the voltage dividing circuit is used for dividing the voltage signal output by the PWM controller; the totem pole driving circuit is used for pulling up the voltage signal from the voltage dividing circuit and generating a GaN power device driving voltage signal; the negative voltage generating circuit is used for adding a negative voltage driving signal into the GaN power device driving voltage signal. The scheme of the invention ensures that the grid voltage has enough safety margin while maintaining the normal operation of the GaN power device, realizes certain negative pressure driving, ensures that the oscillation caused by parasitic parameters in a circuit can not cause misoperation under the high-frequency condition, is suitable for the high-reliability driving of the GaN power device applied to a spacecraft, and lays a foundation for the application of a switching power supply with higher working frequency, higher power density and higher conversion efficiency in a space system.
Description
Technical Field
The invention relates to the technical field of switching power supply circuits, in particular to a nationwide synchronous rectification and driving circuit suitable for GaN power devices.
Background
In recent years, in the field of aerospace, electric car chargers or communication power supplies, there is a demand for higher switching power supplies, and it is critical to use switching devices having higher switching speeds and lower losses for high efficiency and high power density switching power supplies.
With the development of semiconductor technology, the performance of silicon-based power devices has gradually approached the material limit boundary. Wide-bandgap semiconductor materials such as Gallium Nitride (GaN) are new generation semiconductor materials that have emerged in the last two decades and have many performance advantages. Compared with the physical characteristics of silicon materials, the GaN material has the advantages of wide forbidden bandwidth, high melting point, high breakdown field strength, high electron saturation drift speed and the like, and the GaN power device can be used for realizing a high-frequency, high-efficiency and high-power-density switching power supply.
Compared with the traditional silicon-based device, the GaN power device has the characteristics of low threshold voltage, small controllable range of gate-source voltage and high sensitivity of parasitic parameters, and for the low-voltage enhanced GaN power device with the withstand voltage range of 0-200V, the minimum value of the threshold voltage is about 0.7V, and the typical value is about 1.4V, so that the device is easy to be started by mistake due to noise or disturbance of a driving signal, and the reliability and the stability of a switching power supply are reduced.
Disclosure of Invention
The invention provides a nationwide synchronous rectification and driving circuit suitable for a GaN power device, which ensures that the grid voltage has enough safety margin while maintaining the normal operation of the GaN power device, realizes certain negative pressure driving, ensures that oscillation caused by parasitic parameters in the circuit can not cause misoperation under high-frequency conditions, is suitable for the high-reliability driving of the GaN power device applied to a spacecraft, and lays a foundation for the application of a switching power supply with higher working frequency, higher power density and higher conversion efficiency in a space flight system.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a nationally-produced synchronous rectification and driving circuit suitable for GaN power devices, comprising: a voltage dividing circuit, a totem pole driving circuit, and a current monitoring and negative voltage generating circuit;
the input end of the voltage dividing circuit is connected with the signal output end of the PWM controller, and the output end of the voltage dividing circuit is connected with the totem pole driving circuit and is used for dividing the voltage signal output by the PWM controller;
the input end of the totem pole driving circuit is connected with the voltage dividing circuit, the output end of the totem pole driving circuit is connected with the negative voltage generating circuit and is used for pulling up a voltage signal from the voltage dividing circuit and generating a GaN power device driving voltage signal;
and the input end of the negative pressure generating circuit is connected with the totem pole driving circuit, and the output end of the negative pressure generating circuit is connected with the GaN power device and is used for adding a negative pressure driving signal into a GaN power device driving voltage signal.
Optionally, the voltage dividing circuit includes a resistor R1, a resistor R2, a capacitor C1 and a diode V7, where a first end of the resistor R1 is connected to a signal output end of the PWM controller, a second end of the resistor R1 is connected to a first end of the resistor R2, a second end of the resistor R2 is grounded, two ends of the capacitor C1 are connected in parallel with two ends of the resistor R1, and two ends of the diode V7 are connected in parallel with two ends of the resistor R1.
Optionally, the totem pole driving circuit includes triode V5 and triode V6, triode V5's collecting electrode passes through electric capacity C3 ground connection, triode V5's base is connected with triode V6's base, and triode V5's base's the joint point of base is connected to between resistance R1 and the R2, triode V5's projecting pole is connected with triode V6's projecting pole, and triode V5's projecting pole, triode V6's projecting pole joint point passes through resistance R3 and negative pressure production circuit connection, triode V6's collecting electrode ground connection.
Optionally, the negative voltage generating circuit includes a blocking capacitor C2 and a clamping diode V8, where a first end of the blocking capacitor C2 is connected to a common contact of an emitter of the triode V5 and an emitter of the triode V6, a second end of the blocking capacitor C2 is connected to a negative electrode of the diode V8, an anode of the diode V8 is grounded, a common contact of a second end of the blocking capacitor C2 and the negative electrode of the diode V8 is connected to a first end of a resistor R4, a second end of the resistor R4 is connected to a first end of a resistor R5, a second end of the resistor R5 is grounded, and a common contact of a second end of the resistor R4 and the first end of the resistor R5 outputs a GaN power device driving voltage signal.
The beneficial effects are that:
1) The signal from the PWM controller is divided by the resistors R1 and R2 to generate PWM square wave signals capable of driving the totem pole circuit triode to be turned off and on, the base voltage of the totem pole circuit triode is properly increased in a mode of connecting the capacitor C1 in parallel at two ends of the resistor R1, the driving capability of the totem pole circuit is improved, and when the PMW controller is turned off, the falling time of the totem pole circuit driving signal is accelerated through the diode V7 connected in parallel at two ends of the resistor R1;
2) The negative voltage generating circuit formed by the blocking capacitor C2 and the clamping diode V8 generates a turn-off negative voltage, so that the turn-off speed of the GaN power device is accelerated, the conversion efficiency is improved, and the single particle characteristics of the GaN power device are not influenced.
It should be understood that the description of the invention above is not intended to limit key or critical features of embodiments of the invention, nor to limit the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it will be obvious that the drawings in the following description are some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a block diagram of a 150W series GaN power module;
FIG. 2 is a diagram of a synchronous rectification drive deadband setting;
FIG. 3 is a circuit diagram of a nationally produced synchronous rectification and drive circuit suitable for a GaN power device;
fig. 4 is a waveform diagram of a synchronous rectification driving simulation.
Detailed Description
Embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While the invention is susceptible of embodiment in the drawings, it is to be understood that the invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided to provide a more thorough and complete understanding of the invention. It should be understood that the drawings and embodiments of the invention are for illustration purposes only and are not intended to limit the scope of the present invention.
As shown in FIG. 1, a new generation 150W series GaN power module product with 70V-120V primary side input voltage and 28V output voltage is designed, the power topology adopts a half-bridge type isolation topology, a main power transformer adopts an RM type transformer produced by Dong magnetic company, a magnetic core material is DMR50B high-frequency magnetic material, a MOS tube selects a 200V series GaN power device produced in China, a 200V series GaN power device is also selected for improving conversion efficiency of a synchronous rectification MOS tube, and a Schottky diode is connected in parallel at the DS end of the GaN power device for dead zone range rectification, so that the heat consumption of the product is reduced, and the Schottky diode selects a power type Schottky diode produced by domestic manufacturers.
The synchronous rectification of the power supply output and the PWM controller are grounded together, but the output level of the PWM controller is not matched, the driving output of the PWM controller is about 0-11V, and the GaN power device needs about-0.5-5V driving voltage, so that on the design of a synchronous rectification driving circuit, the synchronous rectification driving circuit selects a driving mode of a totem pole circuit for pulling up a 5V reference, and meanwhile, in order to guarantee negative pressure driving of about-0.5V, a negative pressure generating circuit consisting of a blocking capacitor and a clamping diode is designed.
In order to avoid the phenomenon that the turn-off delay of the GaN power device is inconsistent due to the device parameters during synchronous rectification, and the secondary side of the transformer is in an instant short circuit phenomenon, as shown in fig. 2, the synchronous rectification driving design has a dead time of about 70ns, namely, the synchronous rectification MOS tube is delayed for 70ns to be turned on and turned off in advance of 70ns, and the dead time is configured through a pin of the PWM controller, and the resistor selected by the embodiment is 30k and corresponds to the dead time of about 70 ns.
Referring to fig. 3, the present embodiment provides a nationally-produced synchronous rectification and driving circuit suitable for GaN power devices, comprising: a voltage dividing circuit, a totem pole driving circuit, and a current monitoring and negative voltage generating circuit;
the input end of the voltage dividing circuit is connected with the signal output end of the PWM controller, and the output end of the voltage dividing circuit is connected with the totem pole driving circuit and is used for carrying out voltage dividing treatment on the voltage signal output by the PWM controller;
specifically, the voltage dividing circuit comprises a resistor R1, a resistor R2, a capacitor C1 and a diode V7, wherein a first end of the resistor R1 is connected with a signal output end of the PWM controller, a second end of the resistor R1 is connected with a first end of the resistor R2, a second end of the resistor R2 is grounded, two ends of the capacitor C1 are connected with two ends of the resistor R1 in parallel, and two ends of the diode V7 are connected with two ends of the resistor R1 in parallel.
In this embodiment, the signal from the PWM controller is divided by the resistors R1 and R2 to generate a PWM square wave signal capable of driving the totem pole transistor to turn off and turn on, the base voltage of the totem pole transistor is properly increased by connecting the two ends of the resistor R1 in parallel with the capacitor C1, so as to improve the driving capability of the totem pole circuit, the capacitance value of the capacitor C1 is adaptively adjusted according to the switching frequency, and theoretical calculation and test prove that the capacitor C1 selects 470pF as a relatively reasonable value when 800kHz, and the capacitance value is properly reduced along with the increase of the switching frequency, and similarly, the capacitance is properly increased along with the decrease of the switching frequency, and when the PMW controller is turned off, the falling time of the totem pole circuit driving signal is accelerated by connecting the two ends of the resistor R1 in parallel with the reverse diode V7, and the diode should have the ultrafast recovery capability, so that the ultrafast recovery series diode is selected.
The input end of the totem pole driving circuit is connected with the voltage dividing circuit, the output end of the totem pole driving circuit is connected with the negative voltage generating circuit and is used for pulling up a voltage signal from the voltage dividing circuit and generating a GaN power device driving voltage signal;
specifically, the totem pole driving circuit comprises a triode V5 and a triode V6, wherein the collector of the triode V5 is grounded through a capacitor C3, the base of the triode V5 is connected with the base of the triode V6, the common junction of the base of the triode V5 and the base of the triode V6 is connected between resistors R1 and R2, the emitter of the triode V5 is connected with the emitter of the triode V6, and the common junction of the emitter of the triode V5 and the emitter of the triode V6 is connected with the negative voltage generating circuit through a resistor R3;
in this embodiment, a totem pole driving circuit composed of a model 3DK2222AUB triode and a model 3CK2907UB triode is adopted, the totem pole driving circuit supplies power for 5V by adopting an internal reference of a PWM controller, the maximum driving capability is 100ma, the output of the PWM controller is subjected to voltage division and then is conditioned to a square wave signal of about 5.5V, and the square wave signal enters a negative voltage generating circuit after being driven by the totem pole.
The input end of the negative pressure generating circuit is connected with the totem pole driving circuit, the output end of the negative pressure generating circuit is connected with the GaN power device, and the negative pressure generating circuit is used for adding a negative pressure driving signal into a driving voltage signal of the GaN power device;
specifically, the negative voltage generating circuit comprises a blocking capacitor C2 and a clamping diode V8, wherein a first end of the blocking capacitor C2 is connected with a common junction of an emitter of a triode V5 and an emitter of a triode V6, a second end of the blocking capacitor C2 is connected with a cathode of the diode V8, an anode of the diode V8 is grounded, a common junction of a second end of the blocking capacitor C2 and the cathode of the diode V8 is connected with a first end of a resistor R4, a second end of the resistor R4 is connected with a first end of a resistor R5, a second end of the resistor R5 is grounded, and a common junction of a second end of the resistor R4 and the first end of the resistor R5 outputs a GaN power device driving voltage signal;
according to the manual of the GaN power device, the range of the gate electrode driving voltage is generally-10V to +6V, and the Miller platform is about 3V, so that the GaN power device can be effectively driven by selecting +4V to +5V driving voltage, and the opening threshold of the GaN power device is about 1.2V, so that negative pressure driving with the effect of-0.5V is added in the driving signal to ensure the reliable turn-off of the GaN power device.
In this embodiment, the totem pole driving circuit generates a high-speed PWM driving signal with an amplitude of 5V, and drives the GaN power device after passing through the blocking capacitor C2, and when the GaN power device is turned off, the GaN power device is clamped to about-0.5V under the action of the clamping diode, and the simulation waveform is as shown in fig. 4, so that the turn-off speed of the GaN power device can be accelerated, the conversion efficiency is improved, and the single particle characteristics of the GaN power device are not affected.
The embodiment completes the development of a new generation 150W series GaN power module product, the switching frequency is increased from 300KHz to more than 800KHz, the conversion efficiency of the product is increased to more than 90% under the rated working condition, the power density is doubled compared with the product of the previous generation, the product is verified by environmental tests, and the circuit can meet the space application by a single particle bottoming test.
The foregoing has shown and described the basic principles and main features of the present invention and the advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (4)
1. A nationwide synchronous rectification and driving circuit for GaN power devices, comprising: a voltage dividing circuit, a totem pole driving circuit, and a current monitoring and negative voltage generating circuit;
the input end of the voltage dividing circuit is connected with the signal output end of the PWM controller, and the output end of the voltage dividing circuit is connected with the totem pole driving circuit and is used for dividing the voltage signal output by the PWM controller;
the input end of the totem pole driving circuit is connected with the voltage dividing circuit, the output end of the totem pole driving circuit is connected with the negative voltage generating circuit and is used for pulling up a voltage signal from the voltage dividing circuit and generating a GaN power device driving voltage signal;
and the input end of the negative pressure generating circuit is connected with the totem pole driving circuit, and the output end of the negative pressure generating circuit is connected with the GaN power device and is used for adding a negative pressure driving signal into a GaN power device driving voltage signal.
2. The nationwide synchronous rectification and driving circuit for GaN power devices according to claim 1, wherein the voltage dividing circuit comprises a resistor R1, a resistor R2, a capacitor C1 and a diode V7, wherein a first end of the resistor R1 is connected with a signal output end of the PWM controller, a second end of the resistor R1 is connected with a first end of the resistor R2, a second end of the resistor R2 is grounded, two ends of the capacitor C1 are connected with two ends of the resistor R1 in parallel, and two ends of the diode V7 are connected with two ends of the resistor R1 in parallel.
3. The nationwide synchronous rectification and driving circuit for GaN power devices according to claim 2, wherein the totem pole driving circuit comprises a triode V5 and a triode V6, wherein a collector of the triode V5 is grounded through a capacitor C3, a base of the triode V5 is connected with a base of the triode V6, a common junction of the base of the triode V5 and the base of the triode V6 is connected between resistors R1 and R2, an emitter of the triode V5 is connected with an emitter of the triode V6, a common junction of the emitter of the triode V5 and the emitter of the triode V6 is connected with a negative voltage generating circuit through a resistor R3, and a collector of the triode V6 is grounded.
4. The nationwide synchronous rectification and driving circuit for GaN power devices according to claim 3, wherein the negative voltage generating circuit comprises a blocking capacitor C2 and a clamping diode V8, a first end of the blocking capacitor C2 is connected with a common junction of an emitter of a triode V5 and an emitter of a triode V6, a second end of the blocking capacitor C2 is connected with a cathode of the diode V8, an anode of the diode V8 is grounded, a common junction of a second end of the blocking capacitor C2 and the cathode of the diode V8 is connected with a first end of a resistor R4, a second end of the resistor R4 is connected with a first end of a resistor R5, a second end of the resistor R5 is grounded, and a common junction of a second end of the resistor R4 and the first end of the resistor R5 outputs a GaN power device driving voltage signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311448577.4A CN117674606A (en) | 2023-11-02 | 2023-11-02 | Nationwide synchronous rectification and driving circuit suitable for GaN power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311448577.4A CN117674606A (en) | 2023-11-02 | 2023-11-02 | Nationwide synchronous rectification and driving circuit suitable for GaN power device |
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|---|---|
| CN117674606A true CN117674606A (en) | 2024-03-08 |
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| CN202311448577.4A Pending CN117674606A (en) | 2023-11-02 | 2023-11-02 | Nationwide synchronous rectification and driving circuit suitable for GaN power device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0746836A (en) * | 1993-07-29 | 1995-02-14 | Murata Mfg Co Ltd | Switching supply |
| CN101997420A (en) * | 2010-11-11 | 2011-03-30 | 江苏大学 | Asymmetric half-bridge magnetic coupling drive circuit |
| CN203135829U (en) * | 2013-03-13 | 2013-08-14 | 同济大学 | Transformer isolation-type gate drive circuit capable of performing negative-voltage switching off |
| CN103795229A (en) * | 2014-01-26 | 2014-05-14 | 广州视源电子科技股份有限公司 | Drive circuit of double-tube forward synchronous rectification circuit |
| CN104617752A (en) * | 2015-02-10 | 2015-05-13 | 广州金升阳科技有限公司 | Driving method of gallium nitride transistor, driving circuit thereof, and fly-back converter using the circuit |
| JP2015208111A (en) * | 2014-04-21 | 2015-11-19 | ニチコン株式会社 | gate drive circuit |
| WO2019021159A1 (en) * | 2017-07-25 | 2019-01-31 | Quepal Limited | Switch control circuit for a gate drive |
| CN111865053A (en) * | 2020-06-09 | 2020-10-30 | 北京交通大学 | Negative-pressure turn-off driving circuit based on wide-bandgap power device |
| US20210028782A1 (en) * | 2018-08-08 | 2021-01-28 | Shanghai Zhuanxin Management Consulting Partnership | Power switch drive circuit and device |
-
2023
- 2023-11-02 CN CN202311448577.4A patent/CN117674606A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0746836A (en) * | 1993-07-29 | 1995-02-14 | Murata Mfg Co Ltd | Switching supply |
| CN101997420A (en) * | 2010-11-11 | 2011-03-30 | 江苏大学 | Asymmetric half-bridge magnetic coupling drive circuit |
| CN203135829U (en) * | 2013-03-13 | 2013-08-14 | 同济大学 | Transformer isolation-type gate drive circuit capable of performing negative-voltage switching off |
| CN103795229A (en) * | 2014-01-26 | 2014-05-14 | 广州视源电子科技股份有限公司 | Drive circuit of double-tube forward synchronous rectification circuit |
| JP2015208111A (en) * | 2014-04-21 | 2015-11-19 | ニチコン株式会社 | gate drive circuit |
| CN104617752A (en) * | 2015-02-10 | 2015-05-13 | 广州金升阳科技有限公司 | Driving method of gallium nitride transistor, driving circuit thereof, and fly-back converter using the circuit |
| WO2019021159A1 (en) * | 2017-07-25 | 2019-01-31 | Quepal Limited | Switch control circuit for a gate drive |
| US20210028782A1 (en) * | 2018-08-08 | 2021-01-28 | Shanghai Zhuanxin Management Consulting Partnership | Power switch drive circuit and device |
| CN111865053A (en) * | 2020-06-09 | 2020-10-30 | 北京交通大学 | Negative-pressure turn-off driving circuit based on wide-bandgap power device |
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