CN117670783A - Method and device for positioning monitoring point in photomask production and electronic equipment - Google Patents

Method and device for positioning monitoring point in photomask production and electronic equipment Download PDF

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Publication number
CN117670783A
CN117670783A CN202211056988.4A CN202211056988A CN117670783A CN 117670783 A CN117670783 A CN 117670783A CN 202211056988 A CN202211056988 A CN 202211056988A CN 117670783 A CN117670783 A CN 117670783A
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CN
China
Prior art keywords
mask
target detection
layout
detection area
photomask
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CN202211056988.4A
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Chinese (zh)
Inventor
王大为
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Application filed by Changxin Memory Technologies Inc filed Critical Changxin Memory Technologies Inc
Priority to CN202211056988.4A priority Critical patent/CN117670783A/en
Priority to PCT/CN2022/117069 priority patent/WO2024045204A1/en
Publication of CN117670783A publication Critical patent/CN117670783A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/66—Analysis of geometric attributes of image moments or centre of gravity
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/30—Computing systems specially adapted for manufacturing

Abstract

The disclosure provides a photomask production monitoring point positioning method, a photomask production monitoring point positioning device and electronic equipment. The method for positioning the monitoring points of the photomask production comprises the following steps: determining coordinates of one or more target detection areas on the photomask layout to be tested; generating a mask according to the coordinates of the target detection area, wherein the mask has the same size as the mask layout to be detected, and comprises a hollowed-out area corresponding to the target detection area; performing logic operation on the mask layout to be detected and the mask, and acquiring the mask layout of the target detection area according to the result of the logic operation; and acquiring a plurality of production monitoring positions which accord with preset screening conditions according to the photomask layout of the target detection area, and outputting the coordinates of the production monitoring positions as production monitoring points of the photomask layout to be detected. The embodiment of the disclosure can improve the efficiency of determining the production monitoring points of the photomask layout.

Description

Method and device for positioning monitoring point in photomask production and electronic equipment
Technical Field
The disclosure relates to the field of integrated circuit manufacturing, and in particular relates to a method and a device for positioning a monitoring point in photomask production and electronic equipment.
Background
The photolithography process is an important step in the integrated circuit manufacturing process, in which a mask (also referred to as a reticle) is used to expose a processing region (a region coated with photoresist) to denature the photoresist in the processing region that is not masked by the mask, so that the denatured photoresist or the undenatured photoresist is removed by a chemical agent, and then an etching region is exposed to etch the etching region.
The dimensional accuracy of the mask directly determines the process dimensional accuracy of the integrated circuit, and therefore, requires stringent dimensional inspection during mask fabrication. When the photomask layout is delivered to a manufacturing factory, a provider of the photomask layout simultaneously designates the coordinates and detection standards of the most suitable production monitoring points for size detection in the manufacturing process or after the manufacturing factory. The most suitable production monitoring points are, for example, critical dimension points of critical elements, critical dimension points of critical signal lines, or other points requiring critical dimension control, as well as points capable of representing overall process variation.
Because the patterns of the photomask layout are complex and the pattern size is tiny, the production monitoring points with proper positions and proper sizes are generally required to be searched on the enlarged photomask layout with great time cost, and heavy burden is brought to photomask delivery work, so that a more efficient illumination production monitoring point positioning method is required.
It should be noted that the information disclosed in the above background section is only for enhancing understanding of the background of the present disclosure and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The disclosure aims to provide a method, a device and an electronic device for positioning a monitoring point of photomask production, which are used for solving the problem of low positioning efficiency of the monitoring point of photomask production at least to a certain extent.
According to a first aspect of an embodiment of the present disclosure, there is provided a method for positioning a monitor point in a photomask production, including: determining coordinates of one or more target detection areas on the photomask layout to be tested; generating a mask according to the coordinates of the target detection area, wherein the mask has the same size as the mask layout to be detected, and comprises a hollowed-out area corresponding to the target detection area; performing logic operation on the mask layout to be detected and the mask, and acquiring the mask layout of the target detection area according to the result of the logic operation; and acquiring a plurality of production monitoring positions which accord with preset screening conditions according to the photomask layout of the target detection area, and outputting the coordinates of the production monitoring positions as production monitoring points of the photomask layout to be detected.
In an exemplary embodiment of the present disclosure, the determining the coordinates of one or more target detection areas on the reticle layout to be tested includes: obtaining layout data corresponding to one or more target detection areas; and determining the geometric center coordinates and the edge coordinates of the target detection area according to the layout data.
In an exemplary embodiment of the present disclosure, the obtaining layout data corresponding to one or more target detection areas includes: and responding to a drawing operation completion instruction corresponding to the layout data, and obtaining the layout data corresponding to the closed graph drawn by the drawing tool.
In an exemplary embodiment of the present disclosure, the closed figure includes a rectangle, a square ring, a circular ring, a polygon.
In an exemplary embodiment of the present disclosure, the obtaining layout data corresponding to one or more target detection areas includes: and determining layout data corresponding to the selected semiconductor element in response to the semiconductor element selection operation corresponding to the layout data.
In one exemplary embodiment of the present disclosure, generating a mask from coordinates of the target detection area includes: generating an initial mask according to the size of the photomask layout to be tested; generating a first graph on the initial mask by taking the geometric center coordinate of the target detection area as an origin, wherein the coordinate range of the first graph comprises the edge coordinate of the target detection area; and setting one or more areas corresponding to one or more first patterns corresponding to one or more target detection areas on the initial mask to be hollowed out so as to form the mask.
In an exemplary embodiment of the present disclosure, the first pattern is an axisymmetric pattern, including a rectangle, a circle.
In one exemplary embodiment of the present disclosure, generating a mask from coordinates of the target detection area includes: generating an initial mask according to the size of the photomask layout to be tested; generating a second graph with edge coordinates equal to those of the target detection area on the initial mask by taking the geometric center coordinates of the target detection area as an origin; and setting one or more areas corresponding to the second patterns on the initial mask to be hollowed-out so as to form the mask.
In an exemplary embodiment of the present disclosure, the determining the coordinates of one or more target detection areas on the reticle layout to be tested includes: and responding to one or more clicking operations on the photomask layout to be tested, and setting coordinates corresponding to the one or more clicking operations as geometric center targets of the one or more target detection areas.
In an exemplary embodiment of the present disclosure, the generating a mask according to coordinates of the target detection area includes: generating an initial mask according to the size of the photomask layout to be tested; generating a third graph with a preset shape and a preset size on the initial mask by taking the geometric center coordinate of the target detection area as an origin; and setting one or more areas corresponding to the third patterns on the initial mask to be hollowed-out so as to form the mask.
In an exemplary embodiment of the present disclosure, the obtaining, according to the mask layout of the target detection area, a plurality of production monitoring positions that meet a preset screening condition includes: inputting the preset screening conditions based on the photomask layout of the target detection area to determine the positions, meeting the preset screening conditions, in the photomask layout of the target detection area; and automatically outputting coordinates of positions meeting the preset screening conditions in the photomask layout of the target detection area.
In an exemplary embodiment of the present disclosure, the preset screening condition includes a screening target, a screening parameter of the screening target, and a screening value corresponding to the screening parameter.
In an exemplary embodiment of the present disclosure, the screening target includes a line, the screening parameter includes an inclination angle of the line, a line width, and a distance between the line and an adjacent pattern, and the screening value includes an inclination angle value, a line width value, and a distance value of the line.
According to a second aspect of the present disclosure, there is provided a photomask production monitoring point positioning device, comprising: the target detection area positioning module is used for determining coordinates of one or more target detection areas on the photomask layout to be detected; the mask generation module is arranged to generate a mask according to the coordinates of the target detection area, the mask has the same size as the mask layout to be detected, and the mask comprises a hollowed-out area corresponding to the target detection area; the photomask layout processing module is used for carrying out logic operation on the photomask layout to be detected and the mask, and acquiring the photomask layout of the target detection area according to the result of the logic operation; the monitoring position screening module is arranged to acquire a plurality of production monitoring positions which accord with preset screening conditions according to the photomask layout of the target detection area, and output the coordinates of the production monitoring positions as production monitoring points of the photomask layout to be detected.
According to a third aspect of embodiments of the present disclosure, there is provided an electronic device, comprising: a memory; and a processor coupled to the memory, the processor configured to perform the method of any of the above based on instructions stored in the memory.
According to the embodiment of the disclosure, the hollow mask matched with the target detection area is used for carrying out logic operation on the mask to be detected, so that the mask of the target detection area can be accurately obtained, further, the detection of the target detection area and the screening of the production monitoring position are rapidly realized, and the efficiency of determining the production monitoring position of the mask can be greatly improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure. It will be apparent to those of ordinary skill in the art from this disclosure that the drawings in the following description are merely examples of the disclosure and that other drawings may be derived from these drawings without undue effort.
FIG. 1 is a flowchart of a method for locating a reticle production monitor in an exemplary embodiment of the present disclosure.
Fig. 2 is a sub-flowchart of step S1 in one embodiment of the present disclosure.
Fig. 3 is a sub-flowchart of step S2 in one embodiment of the present disclosure.
Fig. 4 is a sub-flowchart of step S2 in another embodiment of the present disclosure.
Fig. 5 is a sub-flowchart of step S2 in yet another embodiment of the present disclosure.
Fig. 6A, 6B, and 6C are schematic diagrams of masks formed in embodiments of the present disclosure, respectively.
Fig. 7A and 7B are both a schematic diagram and a result of the operation shown in step S3.
Fig. 8 is a schematic diagram of a production monitoring location.
Fig. 9 is a schematic diagram of an application scenario in one embodiment of the present disclosure.
FIG. 10 is a schematic diagram of a mask production monitor point positioning device in an embodiment of the disclosure.
Fig. 11 is a block diagram of an electronic device in an exemplary embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments may be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the present disclosure. One skilled in the relevant art will recognize, however, that the aspects of the disclosure may be practiced without one or more of the specific details, or with other methods, components, apparatus, steps. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the present disclosure.
Furthermore, the drawings are only schematic illustrations of the present disclosure, in which the same reference numerals denote the same or similar parts, and thus a repetitive description thereof will be omitted. The block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities. These functional entities may be implemented in software or in one or more hardware modules or integrated circuits or in different networks and/or processor devices and/or microcontroller devices.
In the process of manufacturing a photomask, the critical dimension measurement (CDM, critical Dimension Measurement) parameters, including the values of a plurality of critical dimensions and the measurement location coordinates (also referred to as CDM coordinates), are important parameters for monitoring the quality of the photomask, and are given by the wafer designer according to the design requirements. And the photomask factory measures the size of the corresponding position of the photomask according to CDM coordinates and key size values corresponding to the coordinates given by the wafer design party, and then generates a photomask quality report. At present, the problem that the efficiency is extremely low and errors are prone to occur in measurement by manually searching suitable CDM coordinates by a wafer design party, the uniformity and the accuracy are difficult to ensure in measurement of special patterns, and the evaluation of the overall quality of the photomask is not accurate and comprehensive enough.
The following describes example embodiments of the present disclosure in detail with reference to the accompanying drawings.
FIG. 1 is a flowchart of a method for locating a reticle production monitor in an exemplary embodiment of the present disclosure.
Referring to fig. 1, a reticle production monitor positioning method 100 may include:
step S1, determining coordinates of one or more target detection areas on a photomask layout to be tested;
s2, generating a mask according to the coordinates of the target detection area, wherein the mask has the same size as the mask layout to be detected, and comprises a hollowed-out area corresponding to the target detection area;
step S3, performing logic operation on the mask layout to be detected and the mask, and acquiring the mask layout of the target detection area according to the result of the logic operation;
and S4, acquiring a plurality of production monitoring positions which accord with preset screening conditions according to the photomask layout of the target detection area, and outputting the coordinates of the production monitoring positions as production monitoring points of the photomask layout to be detected.
According to the embodiment of the disclosure, the hollow mask matched with the target detection area is used for carrying out logic operation on the mask to be detected, so that the mask of the target detection area can be accurately obtained, further, the detection of the target detection area and the screening of the production monitoring position are rapidly realized, and the efficiency of determining the production monitoring position of the mask can be greatly improved.
Next, each step of the mask production monitor point positioning method 100 will be described in detail.
In step S1, coordinates of one or more target detection areas on the reticle layout to be tested are determined.
The reticle layout to be tested refers to an electronic file (e.g., MEBES file) of layout data to be delivered to a designer of a reticle manufacturer for reticle production, the electronic file having graphic data, coordinate data, or digital data that can be queried and modified.
The target detection area corresponds to CDM coordinates and is used for controlling the product quality in the process of photomask production by a photomask manufacturer. The target area or areas may be specified based on default data (experience) or design specifications, or may be specified by a designer based on actual design graphics. The target detection area may be a layout area corresponding to an important element to be accurately measured, a layout area where a critical dimension to be accurately controlled is located, and a layout area where a graph (for example, a minimum pitch or a minimum line width) capable of maximally verifying the manufacturing accuracy of a layout is located, and any layout area capable of helping to detect the production quality of a photomask may be used as the target detection area.
In actual operation, the target detection area may be a range specified by selecting a tool, a range specified by inputting coordinates, or a target element selected by a mouse, touch, or the like.
In one embodiment of the present disclosure, the coordinates of the target detection region may include geometric center coordinates and edge coordinates of the target detection region.
Fig. 2 is a sub-flowchart of step S1 in one embodiment of the present disclosure.
Referring to fig. 2, in an exemplary embodiment of the present disclosure, step S1 may include:
step S11, obtaining layout data corresponding to one or more target detection areas;
and step S12, determining the geometric center coordinates and the edge coordinates of the target detection area according to the layout data.
In step S11, layout data corresponding to a closed figure drawn by a drawing tool may be obtained in response to a drawing operation completion instruction corresponding to the photomask layout to be tested, where in an embodiment, the closed figure may be a rectangle, a square ring, a ring, or a polygon. The painting operation can be performed through a painting tool, a circle selection tool and the like which are self-contained in the layout drawing software, and the painting operation can be operated by an operator to flexibly mark a closed figure corresponding to the target detection area on the photomask layout to be detected so as to acquire layout data corresponding to the closed figure. The closed pattern is not necessarily a symmetrical pattern, and the closed pattern may be set to a pattern formed along the edge of the target detection area according to actual requirements so as to accurately match the target detection area.
In another embodiment, step S11 may also determine layout data corresponding to the selected semiconductor element in response to a semiconductor element selection operation corresponding to the mask layout to be tested. It will be appreciated that when the target detection area is a selected semiconductor element, the edges of the layout area of the semiconductor element need not be regular patterns such as square, circular, etc.
Then, the geometric center coordinates and the edge coordinates of the target detection area can be automatically positioned according to the selected layout data.
In still another embodiment of the present disclosure, the coordinates corresponding to the one or more clicking operations may also be set as the geometric center target of the one or more target detection areas in direct response to the one or more clicking operations on the mask layout to be tested. In this embodiment, the clicking operation does not need to involve the edge coordinates of the target detection area, and the edge coordinates of the target detection area are automatically formed in the subsequent mask generation process, so that the operation efficiency is high.
Besides the coordinates of the target detection area generated by clicking, the geometric center coordinates and the edge coordinates of the target detection area can also be directly input according to the coordinate range of layout data. For example, the range of the edge coordinates is directly determined as an area surrounded by four positioning points (x 1, y 1), (x 2, y 2), (x 3, y 4), (x 4, y 4), or as a circle with (x 5, y 5) as the center and R as the radius. The number of the positioning points is only an example, and in actual operation, the number of the positioning points is more than three, and a surrounding area can be determined.
The direct input of coordinates to locate the target detection area can further improve the location efficiency, and is suitable for scenes with accurate measurement purposes, which have requirements on the uniformity of the target detection area. For example, when a fixed offset point of each chip in a mask layout to be tested involving multiple chips needs to be located, a center position coordinate of each chip in the mask layout to be tested or coordinates (for example, a certain overlay mark coordinate) of the same locating point of each other chip may be obtained first, and then a geometric locating coordinate of a target detection area corresponding to each chip may be generated based on one offset coordinate. The positioning coordinates may be either the center coordinates of the target detection area or some edge coordinates of the target detection area, such as the coordinates of some corner. As the final positioning coordinates of the target detection area are automatically calculated, the target detection area can be quickly, uniformly and accurately positioned.
In step S2, a mask is generated according to the coordinates of the target detection area, the mask has the same size as the mask layout to be tested, and the mask includes a hollowed-out area corresponding to the target detection area.
And generating different operation flows corresponding to the mask in the step S2 according to whether the edge coordinates of the target detection area are defined or not.
Fig. 3 is a sub-flowchart of step S2 in one embodiment of the present disclosure. The embodiment shown in fig. 3 corresponds to a scenario in which the edge coordinates of the target detection area are defined in step S1.
Referring to fig. 3, in an exemplary embodiment of the present disclosure, step S2 may include:
s21, generating an initial mask according to the size of the photomask layout to be tested;
step S22, generating a first graph on the initial mask by taking the geometric center coordinate of a target detection area as an origin, wherein the coordinate range of the first graph comprises the edge coordinate of the target detection area;
in step S23, the areas corresponding to the one or more first patterns corresponding to the one or more target detection areas are set to be hollowed out on the initial mask to form the mask.
In one embodiment of the present disclosure, the file type of the initial mask is a GDS file (x.gds), the file for storing the first graphic corresponding to the target detection area is also a GDS file, the mask formed after processing the initial mask is an OASIS file (x.oas), and the finally generated hollowed mask is the same OASIS file. The GDS file and the OASIS file are layout files and are used for producing mask plates required by a photoetching process. The GDS corresponds to a rectangular coordinate system (e.g., recording a rectangle requires recording four vertex coordinates), which contains geometric shapes, text, or labels of planes in the integrated circuit layout, and other relevant information, and may be composed of a hierarchical structure. OASIS files correspond to polar coordinate systems (recording rectangles requires recording an end point coordinate and an angle), defining the code required for rectangular, trapezoidal, and polygonal geometries, defining the type of each shape, how they are organized into pattern elements containing those shapes, and the relative position of each pattern element. OASIS files have a small amount of data, which is beneficial to shortening file transfer time.
The initial mask is completely consistent with the outline (the size and the shape are consistent) of the mask layout to be tested. The initial mask also has coordinates that are exactly identical to the mask layout to be tested. The same coordinate point can be located on the initial mask according to the geometric center coordinates of the target detection area in step S22, and the coordinates on the initial mask and the mask layout to be detected are not distinguished in terms of characters.
Each target detection area corresponds to one first graph. The first pattern may be a pattern that covers the corresponding target detection area (the coordinate range includes the edge coordinates of the target detection area) centering on the geometric center coordinates of the target detection area. In one exemplary embodiment of the present disclosure, the first pattern is an axisymmetric pattern, including rectangular, circular. The embodiment shown in fig. 3 can be applied to a scene in which the edge profile of the target detection area is irregular (e.g., the target detection area determined by the tracing of the drawing tool and the target detection area of the corresponding irregular semiconductor element), so as to improve the mask generation efficiency. The edge calculation rule of the first pattern may be preset to generate the first pattern according to the maximum range of the target detection area.
After the first pattern is formed, in step S23, a hollowed-out operation is performed on the initial mask to form a mask, each hollowed-out area in the mask corresponds to one target detection area, so as to reserve coordinate information of the target detection area, and in subsequent operations, positioning of the mask layout to be tested is achieved based on the coordinate information.
The hollowed-out operation may be a logical nand (ANDNOT) operation on the initial mask and a file for storing coordinates of the target detection area, so as to generate a mask that does not include a corresponding area of the target detection area.
Fig. 4 is a sub-flowchart of step S2 in another embodiment of the present disclosure. The embodiment shown in fig. 4 corresponds equally to the scenario in which the edge coordinates of the target detection area are delimited in step S1.
Referring to fig. 4, in another embodiment of the present disclosure, step S2 may include:
s21, generating an initial mask according to the size of the photomask layout to be tested;
step S24, generating a second graph with edge coordinates equal to those of the target detection area on the initial mask by taking the geometric center coordinates of the target detection area as an origin;
in step S25, the areas corresponding to the one or more second patterns are hollowed out on the initial mask to form the mask.
In the embodiment shown in fig. 4, the edge of the hollowed-out area on the mask is exactly coincident with the edge of the target detection area, i.e. a hollowed-out area exactly corresponding to the target detection area is formed on the mask. The embodiment shown in fig. 4 may be applied to a relatively regular (e.g., rectangular) outline of the target detection area, so as to accurately locate the hollowed-out area corresponding to the target detection area, or when the area of the target detection area is greater than a preset value, so as to reduce the area of the hollowed-out area, reduce the subsequent screening workload, and improve the production monitoring position locating efficiency of the subsequent step.
Fig. 5 is a sub-flowchart of step S2 in yet another embodiment of the present disclosure. The embodiment shown in fig. 5 corresponds equally to a scenario in which only the edge coordinates of the target detection area are given in step S1.
Referring to fig. 5, in an exemplary embodiment of the present disclosure, step S2 may include:
s21, generating an initial mask according to the size of the photomask layout to be tested;
step S26, generating a third graph with a preset shape and a preset size on the initial mask by taking the geometric center coordinate of the target detection area as an origin;
in step S27, the areas corresponding to the one or more third patterns are set to be hollowed out on the initial mask to form the mask.
The embodiment shown in fig. 5 can be applied to a position where there is no requirement for the shape of the target detection area. Illustratively, the target detection area corresponds to a plurality of dense parallel lines (e.g., parallel data signal lines, address signal lines, etc. involving large-area long-distance wiring on a layout) to check the line width and line pitch of the parallel lines, and at this time, a third pattern including a plurality of pieces of parallel line information may be generated centering on any point of the central portion of the parallel line area to extract the parallel line information. In this case, the third pattern may be rectangular (window-like), for example, and the edge of the rectangle may be sized to cover a plurality of parallel lines.
The above is merely an example, and in actual situations, any area that does not have strict requirements on the shape of the target detection area may apply the embodiment shown in fig. 5 to generate a mask to improve the mask generation efficiency. The preset shape and the preset size corresponding to the third graph can be edited to adapt to various layout areas.
Although fig. 3, 4, and 5 separately describe the process of generating a layout, it is understood that in other embodiments of the present disclosure, the process of generating the hollowed-out regions in the mask in fig. 3, 4, and 5 may be used in combination to correspond to various types of target detection regions.
In addition, in the embodiments shown in fig. 3, 4 and 5, the process of generating the mask according to the target detection area may be implemented by a logical and not (ANDNOT) operation, that is, by performing a logical and not (ANDNOT) operation on the initial mask and the first pattern/second pattern/third pattern, a hollowed-out area is formed on the initial mask, so as to form the mask. The initial mask may be provided with a plurality of hollow modes, which is not limited in this disclosure.
Fig. 6A, 6B, and 6C are schematic diagrams of masks formed in embodiments of the present disclosure, respectively.
Mask 62 shown in fig. 6A corresponds to the embodiment shown in fig. 3, mask 63 shown in fig. 6B corresponds to the embodiment shown in fig. 4, and mask 64 shown in fig. 6C corresponds to the embodiment shown in fig. 5.
Referring to fig. 6A, an initial mask 60 is the same size and shape as a reticle layout 61 to be inspected, and the reticle layout 61 to be inspected records a defined target inspection area 600. In step S22, a regular first pattern 601 is generated according to the target detection area 600, and in step S23, a corresponding area of the first pattern 601 is set to be hollowed out, so as to form a mask 62, where the mask 62 has a hollowed-out area 602. The hollowed-out region 602 of the mask 62 covers the edge coordinates of the target detection region 600. Wherein the coordinate range of the first pattern 601 includes the coordinate range of the target detection area 600.
Referring to fig. 6B, the original mask 60 is the same size and shape as the reticle layout 61 to be inspected, and the reticle layout 61 to be inspected records a defined target detection area 603. In step S24, a completely consistent second pattern 604 is generated according to the target detection area 603, and in step S25, the corresponding area of the second pattern 604 is hollowed out to form a mask 63, where the mask 63 has a hollowed-out area 605. The hollowed-out area 605 of the mask 63 is completely coincident with the edge coordinates of the target detection area 603.
Referring to fig. 6C, the initial mask 60 is the same size and shape as the reticle layout 61 to be inspected, and the reticle layout 61 to be inspected records the geometric center coordinates 606 of the defined target inspection area. In step S26, a third pattern 607 of a preset shape and a preset size is generated according to the geometric center coordinates 606 of the target detection area, and in step S27, the corresponding area of the third pattern 607 is hollowed out to form a mask 64, where the mask 64 has a hollowed-out area 608. The geometric center coordinates of the hollowed-out area 608 of the mask 64 are the geometric center coordinates 606 of the target detection area, and the edge coordinates completely coincide with the edge coordinates of the third pattern 607.
In the embodiments shown in fig. 6A, 6B, and 6C, the logical operation for generating the hollowed mask 64 may be a logical nand (ANDNOT) operation.
And in step S3, performing logic operation on the mask layout to be detected and the mask, and acquiring the mask layout of the target detection area according to the result of the logic operation.
In one embodiment, the logical operation in step S3 is a logical OR (OR) operation. Because the mask generated in the step S2 does not have the coordinates corresponding to the target detection area, the mask layout to be detected and the mask can be subjected to logical OR operation, layout data corresponding to the target detection area in the mask layout to be detected can be screened out, and the layout data can be further stored to form the mask layout of the target detection area.
Fig. 7A and 7B are both a schematic diagram and a result of the operation shown in step S3.
Referring to fig. 7A and 7B, the reticle layout 70 and mask 71 to be tested are two separate data files, but with a completely consistent coordinate system and outer edge dimension data. The mask 71 has a plurality of hollowed-out areas 701 corresponding to the target detection areas. In step S3, a logical OR (OR) operation is performed on the mask layout 70 to be tested and the mask 71, so as to obtain a mask layout 72 corresponding to the hollowed-out area of the mask 71 on the mask layout 71 to be tested, i.e. the mask layout 72 of the target detection area.
Fig. 7A is a schematic diagram of the target detection area located at the center of the mask layout 70 to be tested, and fig. 7B is a schematic diagram of the target detection area located at the bezel of the mask layout 70 to be tested.
Fig. 7A and 7B each show an enlarged image of the mask layout 72 that is the target detection area. It can be seen that the mask layout 72 only includes a small amount of layout information corresponding to the target detection area in the mask layout 70 to be tested, so that the operation amount of step S4 can be reduced, and the processing efficiency of the mask layout 70 to be tested is greatly improved.
The reticle layouts to be tested in fig. 7A and 7B may correspond to a memory sub-array (Subarray). By shifting the center coordinates of the storage sub-array, the corresponding rectangle can be accurately drawn to select the measurement area, such as measuring only the core area (FIG. 7A) or measuring only the edge area of the storage sub-array (FIG. 7B). Therefore, the method provided by the embodiment of the disclosure can realize the evaluation of the pattern size of the specific area, and the generated production monitoring point can evaluate the quality of the photomask more comprehensively and accurately.
Note that, the file format of the mask layout 72 of the target detection area generated in step S3 may be an OASIS file, which is the same as the file format of the hollowed mask 71. The file format of the reticle layout 70 to be tested may be a MEBES file.
By using the hollowed mask 71 to perform logical OR operation on the mask layout 70 to be detected, the mask layout 72 only comprising layout data of the target detection area is generated, the operation amount of subsequent screening and positioning can be greatly reduced, the layout data of the target detection area can be accurately obtained, and the screening accuracy of the production monitoring position is improved.
In step S4, a plurality of production monitoring positions meeting preset screening conditions are obtained according to the mask layout of the target detection area, and coordinates of the production monitoring positions are output as production monitoring points of the mask layout to be tested.
In one embodiment of the present disclosure, step S4 may include: and inputting a preset screening condition based on the photomask layout of the target detection area to determine the position, which accords with the preset screening condition, in the photomask layout of the target detection area, and then automatically outputting the coordinates of the position, which accords with the preset screening condition, in the photomask layout of the target detection area.
The preset screening conditions may include a screening target, a screening parameter of the screening target, and a screening value corresponding to the screening parameter.
Screening the photomask layout of the target detection area, and automatically executing the screening through a preset calculation program. Since layout data to be screened is very small (refer to comparison between the mask layout 72 of the target detection area and the mask layout 70 to be detected in fig. 7A or fig. 7B), the calculation amount of the calculation program is greatly reduced, the calculation efficiency is greatly improved, and the positions meeting the preset screening conditions can be rapidly positioned, so that the coordinates of the positions are output as production monitoring points.
Fig. 8 is a schematic diagram of a production monitoring location.
Referring to fig. 8, in one embodiment, the screening target includes a line, the screening parameter includes an inclination angle of the line, a line width, and a distance between the line and an adjacent pattern, and the screening value includes an inclination angle value, a line width value, and a distance value of the line. The lines may be diagonal lines, i.e. the angle of inclination of the lines is not equal to 0 °, 90 °, 180 °, 270 °. The inclination angle of the line is defined based on a default coordinate system of the drawing software, and in a general scene, when drawing is performed based on the default coordinate system of the drawing software, the border of the rectangle is a vertical or horizontal line, and the oblique line in the embodiment shown in fig. 8 is an oblique line with respect to the border of the rectangle.
For example, it may be set that a position where the line inclination angle is equal to-60 °, the line width is equal to 30nm, and the distance between the line and the edge of the adjacent pattern is equal to 90nm, such as position 81 in fig. 8, is selected.
In the related art, for such oblique lines whose inclination angle is relatively irregular (not horizontal or vertical), if screening is performed based on the entire data of the mask layout 70 to be tested, the screening time cost is extremely high, and it usually takes several hours or even ten or more hours to process one mask layout 70 to be tested. Or, the operator visually locates the area where the lines meeting the condition possibly exist, the mark point is measured in a line-by-line manner, and finally the position meeting the condition is marked, so that the manual measurement workload is large, the manual measurement error is also large, and the high-precision detection purpose of the mask layout 70 to be measured is extremely difficult to meet.
By the method of the embodiment of the disclosure, the automatic screening efficiency can be greatly improved by narrowing the automatically screened layout data range from the mask layout 70 to be detected to the mask layout 72 of a plurality of target detection areas, and the production monitoring positions meeting the preset screening conditions can be rapidly and accurately marked, so that the production monitoring points which can be provided for mask manufacturers are obtained. According to experiments, the output time of the production monitoring point position can be reduced to be within half an hour, the average speed is improved by more than 8 times, and the time cost is greatly saved.
In one embodiment, the method of the disclosed embodiments may be used to locate a grabbing specific pattern and area of a chip area (chip).
Fig. 9 is a schematic diagram of an application scenario in one embodiment of the present disclosure.
Referring to fig. 9, the same Pattern may become different after OPC (Optical Proximity Correction ), by using the method provided by the embodiment of the present disclosure, a hollowed mask is used to perform a logic operation on the layout to obtain layout data of the target detection area, that is, the layout data of the two target detection areas 91 and 92 after OPC correction is precisely located through Pattern match, the dimensional difference of the two corrected same patterns can be compared, and further the influence of OPC correction on the mask manufacturing is analyzed.
In addition, the embodiments of the present disclosure may also implement critical pattern size linking.
The size of the manufactured photomask will have a certain difference with the design file, and after the photomask is used for exposure, the pattern on the wafer will also have a certain difference with the photomask, so that the pattern on the wafer has a larger difference with the design file.
By using the method provided by the embodiment of the disclosure, the coordinates of the critical dimension graph can be grasped, the graph which is easy to generate defects can be tracked and detected, and the graph can be linked with the rear end to form a complete dimension monitoring system.
In summary, according to the embodiment of the disclosure, the mask is used to derive the mask layout of the target measurement area, and then the mask layout of the target measurement area with smaller data size is screened to determine the CDM coordinates, so that the CDM coordinate screening time is greatly shortened, and the problems of long time consumption, low efficiency, easy error and the like in the related art when CDM measurement is manually performed are solved.
In addition, by giving the coordinates of the target detection area, screening out a small number of target measurement areas by using a mask, the mask layout data of the designated graphic area can be selectively derived and analyzed, the uniformity and accuracy of CDM size measurement can be ensured, and the influence of OPC (Optical Proximity Correction ) on the mask manufacturing process can be accurately evaluated.
Finally, since the appearance and the coordinates of the photomask layout of the target detection area can be accurately defined, the uniformity and the accuracy of calculation are far better than those of manual measurement, the uniformity and the accuracy are improved, the difficulty of capturing the special pattern size can be overcome, and the method is used for monitoring the size of the special pattern of the photomask layout to be detected.
Corresponding to the above embodiment, the present disclosure further provides a mask production monitor positioning device for implementing the above embodiment.
FIG. 10 is a schematic diagram of a mask production monitor point positioning device in an embodiment of the disclosure.
Referring to fig. 10, a mask production monitor point positioning apparatus 1000 may include:
a target detection area positioning module 101 configured to determine coordinates of one or more target detection areas on the mask layout to be tested;
the mask generation module 102 is configured to generate a mask according to the coordinates of the target detection area, where the mask has the same size as the mask layout to be tested, and the mask includes a hollowed-out area corresponding to the target detection area;
the mask layout processing module 103 is configured to perform logic operation on the mask layout to be detected and the mask, and acquire the mask layout of the target detection area according to the result of the logic operation;
The monitoring position screening module 104 is configured to obtain a plurality of production monitoring positions according to the mask layout of the target detection area, and output coordinates of the production monitoring positions as production monitoring points of the mask layout to be tested.
In one exemplary embodiment of the present disclosure, the target detection zone locating module 101 is configured to: obtaining layout data corresponding to one or more target detection areas; and determining the geometric center coordinates and the edge coordinates of the target detection area according to the layout data.
In one exemplary embodiment of the present disclosure, the target detection zone locating module 101 is configured to: and responding to a drawing operation completion instruction corresponding to the layout data, and obtaining the layout data corresponding to the closed graph drawn by the drawing tool.
In an exemplary embodiment of the present disclosure, the closed figure includes a rectangle, a square ring, a circular ring, a polygon.
In one exemplary embodiment of the present disclosure, the target detection zone locating module 101 is configured to: and determining layout data corresponding to the selected semiconductor element in response to the semiconductor element selection operation corresponding to the layout data.
In one exemplary embodiment of the present disclosure, the mask generation module 102 is configured to: generating an initial mask according to the size of the photomask layout to be tested; generating a first graph on the initial mask by taking the geometric center coordinate of the target detection area as an origin, wherein the coordinate range of the first graph comprises the edge coordinate of the target detection area; and setting one or more areas corresponding to one or more first patterns corresponding to one or more target detection areas on the initial mask to be hollowed out so as to form the mask.
In an exemplary embodiment of the present disclosure, the first pattern is an axisymmetric pattern, including a rectangle, a circle.
In one exemplary embodiment of the present disclosure, the mask generation module 102 is configured to: generating an initial mask according to the size of the photomask layout to be tested; generating a second graph with edge coordinates equal to those of the target detection area on the initial mask by taking the geometric center coordinates of the target detection area as an origin; and setting one or more areas corresponding to the second patterns on the initial mask to be hollowed-out so as to form the mask.
In one exemplary embodiment of the present disclosure, the target detection zone locating module 101 is configured to: and responding to one or more clicking operations on the photomask layout to be tested, and setting coordinates corresponding to the one or more clicking operations as geometric center targets of the one or more target detection areas.
In one exemplary embodiment of the present disclosure, the mask generation module 102 is configured to: generating an initial mask according to the size of the photomask layout to be tested; generating a third graph with a preset shape and a preset size on the initial mask by taking the geometric center coordinate of the target detection area as an origin; and setting one or more areas corresponding to the third patterns on the initial mask to be hollowed-out so as to form the mask.
In one exemplary embodiment of the present disclosure, the monitor location screening module 104 is configured to: inputting the preset screening conditions based on the photomask layout of the target detection area to determine the positions, meeting the preset screening conditions, in the photomask layout of the target detection area; and automatically outputting coordinates of positions meeting the preset screening conditions in the photomask layout of the target detection area.
In an exemplary embodiment of the present disclosure, the preset screening condition includes a screening target, a screening parameter of the screening target, and a screening value corresponding to the screening parameter.
In an exemplary embodiment of the present disclosure, the screening target includes a line, the screening parameter includes an inclination angle of the line, a line width, and a distance between the line and an adjacent pattern, and the screening value includes an inclination angle value, a line width value, and a distance value of the line.
In an exemplary embodiment of the present disclosure, an electronic device capable of implementing the above method is also provided.
Those skilled in the art will appreciate that aspects of the presently disclosed embodiments may be implemented as a system, method, or program product. Accordingly, aspects of embodiments of the disclosure may be embodied in the following forms, namely: an entirely hardware embodiment, an entirely software embodiment (including firmware, micro-code, etc.) or an embodiment combining hardware and software aspects may be referred to herein as a "circuit," module "or" system.
An electronic device 1100 according to such an embodiment of the present disclosure is described below with reference to fig. 11. The electronic device 1100 shown in fig. 11 is merely an example and should not be construed as limiting the functionality and scope of use of the disclosed embodiments.
As shown in fig. 11, the electronic device 1100 is embodied in the form of a general purpose computing device. Components of electronic device 1100 may include, but are not limited to: the at least one processing unit 1111, the at least one memory unit 1120, and a bus 1130 connecting the different system components (including the memory unit 1120 and the processing unit 1111).
Wherein the storage unit stores program code that is executable by the processing unit 1111 such that the processing unit 1111 performs steps according to various exemplary embodiments of the present disclosure described in the above-described "exemplary methods" section of the present specification. For example, the processing unit 1111 may perform the method as shown in the embodiments of the present disclosure.
The storage unit 1120 may include a readable medium in the form of a volatile storage unit, such as a Random Access Memory (RAM) 11201 and/or a cache memory 11202, and may further include a Read Only Memory (ROM) 11203.
The storage unit 1120 may also include a program/utility 11204 having a set (at least one) of program modules 11205, such program modules 11205 including, but not limited to: an operating system, one or more application programs, other program modules, and program data, each or some combination of which may include an implementation of a network environment.
The bus 1130 may be a local bus representing one or more of several types of bus structures, including a memory unit bus or memory unit controller, a peripheral bus, an accelerated graphics port, a processing unit, or a bus using any of a variety of bus architectures.
The electronic device 1100 may also communicate with one or more external devices 1200 (e.g., keyboard, pointing device, bluetooth device, etc.), one or more devices that enable a user to interact with the electronic device 1100, and/or any devices (e.g., routers, modems) that enable the electronic device 1100 to communicate with one or more other computing devices. Such communication may occur through an input/output (I/O) interface 1150. Also, electronic device 1100 can communicate with one or more networks such as a Local Area Network (LAN), a Wide Area Network (WAN), and/or a public network, such as the Internet, through network adapter 1160. As shown, network adapter 1160 communicates with other modules of electronic device 1100 via bus 1130. It should be appreciated that although not shown, other hardware and/or software modules may be used in connection with electronic device 1100, including, but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, data backup storage systems, and the like.
In an exemplary embodiment of the present disclosure, a computer-readable storage medium having stored thereon a program product capable of implementing the method described above in the present specification is also provided. In some possible implementations, various aspects of the disclosed embodiments may also be implemented in the form of a program product comprising program code for causing a terminal device to carry out the steps according to the various exemplary embodiments of the disclosure as described in the "exemplary methods" section of this specification, when the program product is run on the terminal device.
Furthermore, the above-described figures are only schematic illustrations of processes included in the method according to the exemplary embodiments of the present disclosure, and are not intended to be limiting. It will be readily appreciated that the processes shown in the above figures do not indicate or limit the temporal order of these processes. In addition, it is also readily understood that these processes may be performed synchronously or asynchronously among the plurality of modules.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any adaptations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

Claims (15)

1. A method for positioning a reticle production monitor, comprising:
determining coordinates of one or more target detection areas on the photomask layout to be tested;
generating a mask according to the coordinates of the target detection area, wherein the mask has the same size as the mask layout to be detected, and comprises a hollowed-out area corresponding to the target detection area;
performing logic operation on the mask layout to be detected and the mask, and acquiring the mask layout of the target detection area according to the result of the logic operation;
and acquiring a plurality of production monitoring positions which accord with preset screening conditions according to the photomask layout of the target detection area, and outputting the coordinates of the production monitoring positions as production monitoring points of the photomask layout to be detected.
2. The method of claim 1, wherein determining coordinates of one or more target inspection areas on a reticle layout to be inspected comprises:
obtaining layout data corresponding to one or more target detection areas;
and determining the geometric center coordinates and the edge coordinates of the target detection area according to the layout data.
3. The method for positioning a monitor point for photomask production according to claim 2, wherein the obtaining layout data corresponding to one or more target detection areas comprises:
And responding to a drawing operation completion instruction corresponding to the layout data, and obtaining the layout data corresponding to the closed graph drawn by the drawing tool.
4. The method of claim 3, wherein the closed pattern comprises a rectangle, a square ring, a circle, or a polygon.
5. The method for positioning a monitor point for photomask production according to claim 2, wherein the obtaining layout data corresponding to one or more target detection areas comprises:
and determining layout data corresponding to the selected semiconductor element in response to the semiconductor element selection operation corresponding to the layout data.
6. The method of positioning a reticle production monitor point according to any one of claims 2 to 5, wherein generating a mask from coordinates of the target detection area comprises:
generating an initial mask according to the size of the photomask layout to be tested;
generating a first graph on the initial mask by taking the geometric center coordinate of the target detection area as an origin, wherein the coordinate range of the first graph comprises the edge coordinate of the target detection area;
and setting one or more areas corresponding to one or more first patterns corresponding to one or more target detection areas on the initial mask to be hollowed out so as to form the mask.
7. The method of claim 6, wherein the first pattern is an axisymmetric pattern including rectangular and circular.
8. The method of positioning a reticle production monitor point according to any one of claims 2 to 5, wherein generating a mask from coordinates of the target detection area comprises:
generating an initial mask according to the size of the photomask layout to be tested;
generating a second graph with edge coordinates equal to those of the target detection area on the initial mask by taking the geometric center coordinates of the target detection area as an origin;
and setting one or more areas corresponding to the second patterns on the initial mask to be hollowed-out so as to form the mask.
9. The method of claim 1, wherein determining coordinates of one or more target inspection areas on a reticle layout to be inspected comprises:
and responding to one or more clicking operations on the photomask layout to be tested, and setting coordinates corresponding to the one or more clicking operations as geometric center targets of the one or more target detection areas.
10. The method of claim 9, wherein generating a mask based on coordinates of the target detection area comprises:
Generating an initial mask according to the size of the photomask layout to be tested;
generating a third graph with a preset shape and a preset size on the initial mask by taking the geometric center coordinate of the target detection area as an origin;
and setting one or more areas corresponding to the third patterns on the initial mask to be hollowed-out so as to form the mask.
11. The method for positioning a monitor point for photomask production according to claim 1, wherein obtaining a plurality of monitor positions for photomask production according to the target detection area according to the mask layout comprises:
inputting the preset screening conditions based on the photomask layout of the target detection area to determine the positions, meeting the preset screening conditions, in the photomask layout of the target detection area;
and automatically outputting coordinates of positions meeting the preset screening conditions in the photomask layout of the target detection area.
12. The method of claim 1, wherein the predetermined screening conditions include a screening target, a screening parameter of the screening target, and a screening value corresponding to the screening parameter.
13. The method of claim 12, wherein the screening target comprises a line, the screening parameter comprises an inclination angle of the line, a line width, and a distance between the line and an adjacent pattern, and the screening value comprises an inclination angle value, a line width value, and a distance value of the line.
14. A photomask production monitor point positioning device, comprising:
the target detection area positioning module is used for determining coordinates of one or more target detection areas on the photomask layout to be detected;
the mask generation module is arranged to generate a mask according to the coordinates of the target detection area, the mask has the same size as the mask layout to be detected, and the mask comprises a hollowed-out area corresponding to the target detection area;
the photomask layout processing module is used for carrying out logic operation on the photomask layout to be detected and the mask, and acquiring the photomask layout of the target detection area according to the result of the logic operation;
the monitoring position screening module is arranged to acquire a plurality of production monitoring positions which accord with preset screening conditions according to the photomask layout of the target detection area, and output the coordinates of the production monitoring positions as production monitoring points of the photomask layout to be detected.
15. An electronic device, comprising:
a memory; and
a processor coupled to the memory, the processor configured to perform the reticle production monitor positioning method of any one of claims 1-13 based on instructions stored in the memory.
CN202211056988.4A 2022-08-29 2022-08-29 Method and device for positioning monitoring point in photomask production and electronic equipment Pending CN117670783A (en)

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