CN109634053A - Reticle and preparation method thereof based on graph compensation - Google Patents
Reticle and preparation method thereof based on graph compensation Download PDFInfo
- Publication number
- CN109634053A CN109634053A CN201811571815.XA CN201811571815A CN109634053A CN 109634053 A CN109634053 A CN 109634053A CN 201811571815 A CN201811571815 A CN 201811571815A CN 109634053 A CN109634053 A CN 109634053A
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- China
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- domain
- reticle
- production method
- graph compensation
- photoetching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The reticle and preparation method thereof based on graph compensation that the invention discloses a kind of, the production method include: S1, form the first domain in reticle；S2, photoetching process is carried out using the reticle with the first domain, the actual graphical after obtaining photoetching；S3, according to the actual graphical after the first domain and photoetching, obtain the graphic difference based on lateral etching；S4, graph compensation is carried out to the first domain according to graphic difference, obtains the second domain；S5, the second domain is formed in reticle.The present invention compensates and corrects original layout by the graphic difference of original layout and actual graphical, the dimension of picture of lateral etching in etching technics is compensated into photolithography edition territory, it effectively can etch to form ideal targeted graphical, the process flow suitable for various electronic devices.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of reticle and its system based on graph compensation
Make method.
Background technique
Reactive ion etching technology is widely used in the art of semiconductor manufacturing at present, and reactive ion etching is usually logical
It crosses after the object surface that is etched is patterned technique, the transfer of figure is realized by etching technics.
In entire etching technics, due to the presence of lateral etching, being difficult to avoid having etched away because of transversal erosion should not be by
The region of etching, the figure after leading to etching differ larger with targeted graphical.It is in the prior art usually that adjustment reactive ion is carved
Various technological parameters in erosion reduce the influence of lateral etching as far as possible, but this method needs come really by a large amount of experiment
Determine experiment parameter.
Therefore, in view of the above technical problems, it is necessary to which a kind of reticle and preparation method thereof based on graph compensation is provided.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of reticle and preparation method thereof based on graph compensation.
To achieve the goals above, the technical solution that one embodiment of the invention provides is as follows:
A kind of reticle production method based on graph compensation, the production method include:
S1, the first domain is formed in reticle；
S2, photoetching process is carried out using the reticle with the first domain, the actual graphical after obtaining photoetching；
S3, according to the actual graphical after the first domain and photoetching, obtain the graphic difference based on lateral etching；
S4, graph compensation is carried out to the first domain according to graphic difference, obtains the second domain；
S5, the second domain is formed in reticle.
As a further improvement of the present invention, the first domain in the step S1 is original lithography domain.
As a further improvement of the present invention, the step S3 specifically:
On the basis of the center of the first domain and actual graphical, the graphic difference based on lateral etching is obtained.
As a further improvement of the present invention, the graphic difference in the step S3 include actual graphical periphery relative to
The offset dimensions of the periphery of first domain.
As a further improvement of the present invention, the step S4 specifically:
The periphery of first domain is offset inward carry out graph compensation according to offset dimensions, the second edition after being deviated
Figure.
As a further improvement of the present invention, the actual graphical after first domain and photoetching passes through microscope and obtains
?.
Another embodiment of the present invention provides technical solution it is as follows:
A kind of reticle based on graph compensation, the reticle are obtained by above-mentioned production method production.
The beneficial effects of the present invention are:
The present invention compensates and corrects original layout by the graphic difference of original layout and actual graphical, will etch work
The dimension of picture of lateral etching is compensated into photolithography edition territory in skill, effectively can etch to form ideal targeted graphical, is fitted
Process flow for various electronic devices.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in invention, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is that the present invention is based on the process flow charts of the reticle production method of graph compensation；
Fig. 2 a is the floor map of the first domain in a specific embodiment of the invention；
Fig. 2 b is the floor map of the first domain and actual graphical in a specific embodiment of the invention；
Fig. 2 c is the floor map of the second domain and actual graphical in a specific embodiment of the invention.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, below in conjunction with of the invention real
The attached drawing in example is applied, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work, all should belong to protection of the present invention
Range.
Join shown in Fig. 1, the reticle production method based on graph compensation that the invention discloses a kind of, comprising:
S1, the first domain is formed in reticle；
S2, photoetching process is carried out using the reticle with the first domain, the actual graphical after obtaining photoetching；
S3, according to the actual graphical after the first domain and photoetching, obtain the graphic difference based on lateral etching；
S4, graph compensation is carried out to the first domain according to graphic difference, obtains the second domain；
S5, the second domain is formed in reticle.
The invention also discloses a kind of reticle based on graph compensation, which is made by above-mentioned production method
And it obtains.
Below in conjunction with specific embodiment, the present invention is described in detail.
Reticle production method based on graph compensation in a specific embodiment of the invention, comprising the following steps:
S1, first edition Figure 21 is formed in reticle 11.
Joining shown in Fig. 2 a, first edition Figure 21 in reticle 11 in the present embodiment is illustrated by taking " ten " font as an example,
First edition Figure 21 is by the original lithography domain of etching purpose design, the shapes such as in other embodiments or rectangular, round
Shape.
S2, photoetching process is carried out using the reticle with first edition Figure 21, the actual graphical 22 after obtaining photoetching.
Photoetching process is carried out using reticle shown in Fig. 2 a, due to the presence of lateral etching in photoetching process, after etching
Actual graphical 22 as shown in Figure 2 b, actual graphical and the first domain can have biggish difference.
S3, according to the actual graphical 22 after first edition Figure 21 and photoetching, obtain the graphic difference based on lateral etching.
First edition Figure 21 and actual graphical 22 are observed under high magnification microscope, in first edition Figure 21 and actual graphical 22
On the basis of the heart, obtain the graphic difference based on lateral etching, in graphic difference, that is, Fig. 2 b first edition Figure 21 and actual graphical 22 it
Between region.
Preferably, the graphic difference in the present embodiment includes periphery of the periphery of actual graphical 22 relative to first edition Figure 21
Offset dimensions.
S4, graph compensation is carried out to first edition Figure 21 according to graphic difference, obtains second edition Figure 23.
The periphery of first edition Figure 21 is offset inward carry out figure according to the offset dimensions in graphic difference in the present embodiment
Compensation, second edition Figure 23 after obtaining graph compensation.
Certainly, figure benefit can also be carried out according to the certain proportion of the offset dimensions in graphic difference in other embodiments
It repays, such as graph compensation is 2/3 of the offset dimensions in graphic difference, is no longer described in detail herein.
S5, as shown in Figure 2 c, formation second edition Figure 23 in reticle 12.
After tested, after carrying out photoetching process using the reticle 12 with second edition Figure 23, obtained figure and primary light
Figure of cutting blocks for printing difference is smaller.
It should be understood that being only illustrated by taking the figure of " ten " font as an example in the present embodiment, in other implementations
It may include several figures on the domain in reticle, figure is also not necessarily limited to " ten " font, need to press for each figure in example
Graph compensation is carried out according to the above method, to form the second domain after graph compensation in reticle, is no longer illustrated one by one herein
It is described in detail.
As can be seen from the above technical solutions, the invention has the following beneficial effects:
The present invention compensates and corrects original layout by the graphic difference of original layout and actual graphical, will etch work
The dimension of picture of lateral etching is compensated into photolithography edition territory in skill, effectively can etch to form ideal targeted graphical, is fitted
Process flow for various electronic devices.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (7)
1. a kind of reticle production method based on graph compensation, which is characterized in that the production method includes:
S1, the first domain is formed in reticle；
S2, photoetching process is carried out using the reticle with the first domain, the actual graphical after obtaining photoetching；
S3, according to the actual graphical after the first domain and photoetching, obtain the graphic difference based on lateral etching；
S4, graph compensation is carried out to the first domain according to graphic difference, obtains the second domain；
S5, the second domain is formed in reticle.
2. the reticle production method according to claim 1 based on graph compensation, which is characterized in that in the step S1
The first domain be original lithography domain.
3. the reticle production method according to claim 1 based on graph compensation, which is characterized in that the step S3 tool
Body are as follows:
On the basis of the center of the first domain and actual graphical, the graphic difference based on lateral etching is obtained.
4. the reticle production method according to claim 3 based on graph compensation, which is characterized in that in the step S3
Graphic difference include actual graphical periphery relative to the first domain periphery offset dimensions.
5. the reticle production method according to claim 4 based on graph compensation, which is characterized in that the step S4 tool
Body are as follows:
The periphery of first domain is offset inward carry out graph compensation according to offset dimensions, the second domain after being deviated.
6. the reticle production method according to claim 3 based on graph compensation, which is characterized in that first domain
It is obtained with the actual graphical after photoetching by microscope.
7. a kind of reticle based on graph compensation, which is characterized in that the reticle passes through any one of claim 1~6
The production method makes and obtains.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811571815.XA CN109634053A (en) | 2018-12-21 | 2018-12-21 | Reticle and preparation method thereof based on graph compensation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811571815.XA CN109634053A (en) | 2018-12-21 | 2018-12-21 | Reticle and preparation method thereof based on graph compensation |
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| Publication Number | Publication Date |
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| CN109634053A true CN109634053A (en) | 2019-04-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112257701A (en) * | 2020-10-26 | 2021-01-22 | 中国科学院微电子研究所 | Layout obtaining method and device |
| WO2024045204A1 (en) * | 2022-08-29 | 2024-03-07 | 长鑫存储技术有限公司 | Method and apparatus for locating production monitoring point of photomask, and electronic device |
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| TW200801790A (en) * | 2006-02-14 | 2008-01-01 | Nuflare Technology Inc | Pattern generation method and charged particle beam writing apparatus |
| JP2010066337A (en) * | 2008-09-09 | 2010-03-25 | Nuflare Technology Inc | Method for creating pattern data, method for creating mask, method for manufacturing semiconductor device, and method and program for creating pattern |
| TW201316119A (en) * | 2011-10-04 | 2013-04-16 | Pklt Co Ltd | The selective line width compensation on photomask |
| WO2018230476A1 (en) * | 2017-06-16 | 2018-12-20 | 大日本印刷株式会社 | Device for estimating shape of figure pattern |
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2018
- 2018-12-21 CN CN201811571815.XA patent/CN109634053A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200801790A (en) * | 2006-02-14 | 2008-01-01 | Nuflare Technology Inc | Pattern generation method and charged particle beam writing apparatus |
| JP2010066337A (en) * | 2008-09-09 | 2010-03-25 | Nuflare Technology Inc | Method for creating pattern data, method for creating mask, method for manufacturing semiconductor device, and method and program for creating pattern |
| TW201316119A (en) * | 2011-10-04 | 2013-04-16 | Pklt Co Ltd | The selective line width compensation on photomask |
| WO2018230476A1 (en) * | 2017-06-16 | 2018-12-20 | 大日本印刷株式会社 | Device for estimating shape of figure pattern |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112257701A (en) * | 2020-10-26 | 2021-01-22 | 中国科学院微电子研究所 | Layout obtaining method and device |
| WO2024045204A1 (en) * | 2022-08-29 | 2024-03-07 | 长鑫存储技术有限公司 | Method and apparatus for locating production monitoring point of photomask, and electronic device |
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Application publication date: 20190416 |