CN117613168A - Size-adjustable light-emitting chip for optical sighting telescope and preparation method thereof - Google Patents

Size-adjustable light-emitting chip for optical sighting telescope and preparation method thereof Download PDF

Info

Publication number
CN117613168A
CN117613168A CN202410099688.7A CN202410099688A CN117613168A CN 117613168 A CN117613168 A CN 117613168A CN 202410099688 A CN202410099688 A CN 202410099688A CN 117613168 A CN117613168 A CN 117613168A
Authority
CN
China
Prior art keywords
light
emitting
layer
sighting telescope
optical sighting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410099688.7A
Other languages
Chinese (zh)
Inventor
田振寰
云峰
许创铖
孙秦悦
户峰
李峰
朱建
刘甫
王旭正
张佳栋
于昂肃
韦杰铭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Jiaotong University
Dongguan Aolei Mobile Lighting Equipment Co Ltd
Original Assignee
Xian Jiaotong University
Dongguan Aolei Mobile Lighting Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Jiaotong University, Dongguan Aolei Mobile Lighting Equipment Co Ltd filed Critical Xian Jiaotong University
Priority to CN202410099688.7A priority Critical patent/CN117613168A/en
Publication of CN117613168A publication Critical patent/CN117613168A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B23/00—Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Astronomy & Astrophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)

Abstract

The invention belongs to the technical field of semiconductor devices, and provides a size-adjustable light-emitting chip for an optical sighting telescope and a preparation method thereof, wherein the light-emitting chip comprises an epitaxial wafer; the epitaxial wafer sequentially comprises a substrate, a bottom epitaxial layer, an active layer and a top epitaxial layer from bottom to top; the surface of the epitaxial wafer is provided with an etching area and a plurality of light-emitting areas, an insulating dielectric layer is paved in the etching area, and the insulating dielectric layer extends from the top epitaxial layer to the bottom epitaxial layer; the light-emitting areas are concentrically arranged and sequentially arranged from inside to outside, the light-emitting areas are separated by an insulating medium layer, and an electrode is arranged on the top epitaxial layer corresponding to each light-emitting area; when the light emitting chip is used as a light source in an optical sighting telescope with a spectroscope, the patterns of the light source entering eyes formed by two adjacent light emitting areas at the spectroscope overlap into one pattern. The invention can realize rapid unobstructed switching of multi-size graphics on the premise of not needing a reticle by regulating and controlling different luminous areas, and improves the utilization rate of the light source.

Description

Size-adjustable light-emitting chip for optical sighting telescope and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a size-adjustable light-emitting chip for an optical sighting telescope and a preparation method thereof.
Background
The differentiation graph and the size of the optical sighting telescope have different applicable scenes: the dot with large size can improve the close-range aiming precision under strong light; the small-sized dots can reduce the long-distance aiming error; the circular pattern provides a basis for quick aiming and target distance estimation. If an optical sighting telescope is provided for each use individually, the cost increases.
The light source used in conventional optical sighting telescope is typically a semiconductor light emitting diode or a semiconductor laser diode. The light source is generally formed in a square or circular structure, and a differentiation plate having a specific pattern is placed in front of the light source in order to achieve a specific luminous pattern. At this time, most of the light emitted from the light source is blocked by the reticle, and only a small amount of light is emitted, so that the light source utilization rate is low. More importantly, conventional optical sighting telescope cannot realize switching between different sizes of graphics, such as 2MOA (Minute of Arc minute) to 4MOA.
Disclosure of Invention
Aiming at the problems of single use scene, high multi-size graph switching difficulty and low light source utilization rate of the conventional optical sighting telescope, the invention provides the size-adjustable light-emitting chip for the optical sighting telescope and the preparation method thereof, and the non-blocking switching of multiple sizes of graphs can be realized.
The invention is realized by the following technical scheme:
a size-adjustable light-emitting chip for an optical sighting telescope comprises an epitaxial wafer; the epitaxial wafer sequentially comprises a substrate, a bottom epitaxial layer, an active layer and a top epitaxial layer from bottom to top; the surface of the epitaxial wafer is provided with an etching area and a plurality of light-emitting areas, the etching area is paved with an insulating medium layer, and the insulating medium layer extends from a top epitaxial layer to a bottom epitaxial layer; the light-emitting areas are concentrically arranged and sequentially arranged from inside to outside, the light-emitting areas are separated by an insulating medium layer, and an electrode is arranged on the top epitaxial layer corresponding to each light-emitting area;
when the light emitting chip is used as a light source in an optical sighting telescope with a spectroscope, the patterns of the light source entering eyes formed by two adjacent light emitting areas at the spectroscope overlap into one pattern.
Preferably, the innermost luminous region of the plurality of luminous regions is circular, the other luminous regions are circular, and the diameters of the luminous regions are sequentially increased from inside to outside.
Preferably, the substrate is GaN, sapphire, silicon wafer, siC or CuW.
Preferably, the bottom epitaxial layer includes one or more of a buffer layer, n-GaN, DBR, and p-GaN.
Preferably, the top epitaxial layer includes one or more of n-GaN, DBR, and p-GaN.
Preferably, the material of the active layer is one or more of InGaN, alGaN and GaN.
Preferably, the electrode is a metal electrode.
The preparation method of the size-adjustable light-emitting chip for the optical sighting telescope comprises the following steps:
s1, coating photoresist on an epitaxial wafer, and defining an etching area and a non-etching area through photoetching, wherein the non-etching area corresponds to a light-emitting area;
s2, etching the top epitaxial layer, the active layer and part of the bottom epitaxial layer of the etching area, and removing the residual photoresist;
s3, preparing an insulating medium layer in the etching area on the epitaxial wafer obtained in the S2;
and S4, coating photoresist on the epitaxial wafer obtained in the step S3, defining an electrode coverage area through photoetching according to the light-emitting area, preparing an electrode in the electrode coverage area, and removing the residual photoresist.
Preferably, the S3 specifically is: and (2) preparing an insulating medium layer in the etching area on the epitaxial wafer obtained in the step (S2) by adopting an electron beam evaporation method, a thermal evaporation method, a physical vapor deposition method or a magnetron sputtering method, and defining the coverage area of the insulating medium layer by photoetching or ICP etching so that the etching area is covered by the insulating medium layer.
The optical sighting telescope comprises a light source and a spectroscope, wherein the light source is the light-emitting chip with adjustable size for the optical sighting telescope, the emitted light of the light-emitting chip is vertically incident on the spectroscope, and the patterns of the light-entering sources formed at the spectroscope by two adjacent light-emitting areas overlap into one pattern.
Compared with the prior art, the invention has the following beneficial effects:
in order to solve the graphic switching problem of different sizes of the light source, especially the graphic switching problem of smaller size difference, fill up the blank of the graphic switching products of different sizes in the market, the invention sets up a plurality of luminescent areas which are concentrically arranged from the design of the bottom layer of the luminescent chip of the light source, and introduces the insulating medium layer as the electrical isolation layer of different luminescent areas on the surface of the luminescent chip, utilize the divergence angle of the luminescent chip itself, and consider the eye vision resolution limit, can realize the change of the graphic size of the light source of the entering eyes and the unimpeded switching of the multiple-size graphics. Even though the luminous areas of all levels of the luminous chip are separated, the visual perception of the light of two adjacent luminous areas is still a complete graph under the influence of a specific dispersion angle and the resolution limit of human eyes, and the rapid unimpeded switching of the multi-size graph can be realized on the premise of not needing a reticle by regulating and controlling different luminous areas, so that the utilization rate of a light source is improved, the multi-scene application requirement of an optical sighting telescope can be met, the diversification and the cost performance of an adaptive gun type are improved, and the diversification and the intelligent development of the sighting telescope are promoted.
The preparation method of the size-adjustable light-emitting chip for the optical sighting telescope is simple in process and high in preparation efficiency.
Drawings
Fig. 1 is a schematic structural view of a size-adjustable light emitting chip for an optical sighting telescope.
Fig. 2 is a schematic diagram showing a relationship between a light emitting area of a light emitting chip and an actual light source for entering eyes in an embodiment of the present invention.
Fig. 3 is a flowchart of a light emitting chip manufacturing process according to a first embodiment of the present invention.
Wherein 1 is an epitaxial wafer, 11 is a substrate, 12 is a bottom epitaxial layer, 13 is an active layer, 14 is a top epitaxial layer, 2 is photoresist, 3 is an insulating dielectric layer, and 4 is an electrode.
Detailed Description
For a further understanding of the present invention, the present invention is described below in conjunction with the following examples, which are provided to further illustrate the features and advantages of the present invention and are not intended to limit the claims of the present invention.
Referring to fig. 1, the size-adjustable light emitting chip for an optical sighting telescope of the present invention includes an epitaxial wafer 1; the epitaxial wafer 1 sequentially comprises a substrate 11, a bottom epitaxial layer 12, an active layer 13 and a top epitaxial layer 14 from bottom to top; the surface of the epitaxial wafer 1 is provided with an etching area and a plurality of light-emitting areas, an insulating medium layer 3 is paved in the etching area, and the insulating medium layer 3 extends from a top epitaxial layer 14 to a bottom epitaxial layer 12; the light-emitting areas are concentrically arranged and sequentially arranged from inside to outside, the light-emitting areas are separated by the insulating medium layer 3, and the electrode 4 is arranged on the top epitaxial layer 14 corresponding to each light-emitting area; when the light-emitting chip is applied to an optical sighting telescope with a spectroscope, the patterns of the light-entering sources formed at the spectroscope by two adjacent light-emitting areas overlap into one pattern.
The shape of the light emitting region described in the present invention is not particularly limited, and for example, one arrangement is: the innermost luminous areas of the luminous areas are circular, the other luminous areas are circular, and the diameters of the luminous areas are sequentially increased from inside to outside.
Referring to fig. 2, a specific light emitting region arrangement mode of the present invention includes two light emitting regions arranged concentrically, wherein the light emitting region located at an inner ring (referred to as an inner ring light emitting region for short) is circular, and the light emitting region located at an outer ring (referred to as an outer ring light emitting region for short) is annular. The pattern of the light-emitting area is different from the pattern of the actual light source for entering the eye, and the relationship is shown in fig. 2. Considering the divergence angle and the resolution limit of human eyes existing in the light-emitting chip, even if the patterns of all the light-emitting areas on the light-emitting chip are separated, the patterns of the light-entering source visible to human eyes are still complete dot patterns, and the change of the sizes of the patterns of the light-entering source can be realized by controlling the light-emitting areas to emit light.
The substrate 11 can be GaN, sapphire, a silicon wafer, siC or CuW; the bottom epitaxial layer 12 may include one or more of a buffer layer, n-GaN, DBR (distributed Bragg reflection, distributed bragg mirror), and p-GaN; the top epitaxial layer 14 may comprise one or more of n-GaN, DBR, and p-GaN; the active layer 13 is one or more of InGaN, alGaN, and GaN. The insulating medium layer is any one or more of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, zinc oxide or boron nitride. The electrode 4 according to the invention is preferably a metal electrode. The metal electrode is made of one or more of gold, silver, nickel, aluminum, chromium, titanium and copper.
The invention relates to a preparation method of a size-adjustable light-emitting chip for an optical sighting telescope, which comprises the following steps:
s1, coating photoresist on an epitaxial wafer 1, and defining an etching area and a non-etching area through photoetching, wherein the non-etching area corresponds to a light-emitting area;
s2, etching the top epitaxial layer 14, the active layer 13 and part of the bottom epitaxial layer 12 in the etching area, and removing the residual photoresist;
s3, preparing an insulating medium layer 3 in an etching area on the epitaxial wafer obtained in the step S2;
and S4, coating photoresist on the epitaxial wafer obtained in the step S3, defining an electrode coverage area through photoetching according to the light-emitting area, preparing an electrode in the electrode coverage area, and removing the residual photoresist.
The size-adjustable light-emitting chip for the optical sighting telescope can be applied to the optical sighting telescope, the optical sighting telescope comprises a light source and a spectroscope, the light source is the size-adjustable light-emitting chip for the optical sighting telescope, the emitted light of the light-emitting chip vertically enters the spectroscope, and the patterns of the light source entering eyes formed at the spectroscope in two adjacent light-emitting areas overlap to form one pattern.
Example 1
Referring to fig. 2, the present embodiment provides a size-adjustable light emitting chip for an optical sighting telescope, including an epitaxial wafer 1; the epitaxial wafer 1 sequentially comprises a substrate 11, a bottom epitaxial layer 12, an active layer 13 and a top epitaxial layer 14 from bottom to top; the surface of the epitaxial wafer 1 is provided with an etching area and two light-emitting areas, an insulating medium layer 3 is paved in the etching area, and the insulating medium layer 3 extends from a top epitaxial layer 14 to a bottom epitaxial layer 12; the two luminous areas are concentrically arranged and sequentially arranged from inside to outside, the luminous area of the inner ring is circular, the luminous area of the outer ring is annular, and the two luminous areas are separated by the insulating medium layer 3. An electrode 4 is provided on the top epitaxial layer 14 corresponding to each light emitting region; when the light emitting chip is applied to an optical sighting telescope with a spectroscope, the patterns of the light source entering eyes formed by the two light emitting areas at the spectroscope are overlapped into one pattern.
The divergence angle of the light source and the resolution limit of human eyes are considered, and the diameter ranges of the corresponding inner ring luminous region and the corresponding outer ring luminous region are designed based on target requirements (2 MOA-6 MOA). For example, when the focal length of the spectroscope is 30mm, considering that the resolution limit of the human eye is 1 MOA, the minimum size that can be distinguished by the human eye at 30mm is 2pi×30 (1/60)/360 (mm) =8.7 micrometers, that is, when the distance between the light emitting areas is smaller than the value, the human eye cannot distinguish, and the adjacent light emitting areas can be integrated. The light source size varies from 17.4 microns (8.7 x 2) to 52.2 (8.7 x 6) microns at a 30mm beam splitter, depending on the target requirements (2 MOA-6 MOA). Meanwhile, the light source is considered to have a certain divergence angle, and the corresponding light-emitting chip size is smaller than the light spot size, so that the diameter of the light-emitting area of the inner ring is designed to be 13 microns, the diameter of the inner diameter of the light-emitting area of the outer ring is designed to be 31 microns, and the diameter of the outer diameter of the light-emitting area of the outer ring is designed to be 51 microns. At the moment, no gap exists between the inner ring light spot and the outer ring light spot observed by human eyes, the inner ring light spot meets 2MOA, and the outer ring light spot meets 6MOA.
When the target requirement is 2MOA-4MOA, the diameter of the luminous area of the inner ring is 7 microns, the diameter of the luminous area of the outer ring is 17 microns, and the diameter of the luminous area of the outer ring is 23 microns. At the moment, no gap exists between the inner ring light spot and the outer ring light spot observed by human eyes, the inner ring light spot meets 2MOA, and the outer ring light spot meets 4MOA.
In this embodiment, a dot pattern light emitting chip is realized based on a CuW substrate, where the bottom epitaxial layer 12 is p-GaN, and the bottom epitaxial layer 12 includes an optional structure DBR, and the p-GaN is located on the DBR; the top epitaxial layer 14 is n-GaN; the active layer 13 is an InGaN/GaN multiple quantum well structure.
The epitaxial wafer using the CuW as the substrate in the embodiment can be realized by adopting a commercial GaN epitaxial wafer through a preparation process of an LED with a vertical structure, for example, several important processes including mirror electrode manufacturing, metal bonding, substrate transferring, sapphire peeling technology and the like, and the process of preparing the epitaxial wafer using the CuW as the substrate by using the commercial GaN epitaxial wafer is an existing conventional process, and the invention is not described in more detail.
Referring to fig. 3, the preparation of the corresponding light emitting chip based on the epitaxial wafer using CuW as the substrate specifically includes the following steps:
1) Preparing a cleaning solution by adopting concentrated sulfuric acid, hydrogen peroxide and water according to the volume ratio of 3:1:1, cleaning the epitaxial wafer by using the prepared cleaning solution at the temperature of 130 ℃ for 10min, respectively ultrasonically cleaning the epitaxial wafer for 5min by using acetone and ethanol, repeatedly flushing the epitaxial wafer by deionized water, and drying by using a nitrogen gun;
2) The epitaxial wafer is placed on a spin coater and fixed by a suction cup, photoresist is coated on the top epitaxial layer 14, and an etched area and a non-etched area are defined by exposure and development according to the set range of the light-emitting area, wherein the non-etched area corresponds to the light-emitting area.
3) Etching the top epitaxial layer 14, the active layer 13 and part of the bottom epitaxial layer 12 in the etching area by using the photoresist as a mask layer and adopting dry etching or wet etching to etch the etching area, thereby transferring the photoresist pattern into the epitaxial wafer, wherein the etching depth is 300-500nm and reaches the bottom epitaxial layer; and removing the remaining photoresist by photoresist stripping.
4) And then preparing an insulating medium layer 3 on the epitaxial wafer after the residual photoresist 2 is removed by adopting an electron beam evaporation method, a thermal evaporation method, a physical vapor deposition method or a magnetron sputtering method, wherein the thickness of the insulating medium layer is 300-500nm, and defining the coverage of the insulating medium layer by photoetching or ICP etching according to the luminous region so that the etching region is covered by the insulating medium layer. And selecting a proper etching method according to the material selection of the insulating medium layer. For example, the insulating dielectric layer is made of SiO 2 SiN can be etched by ICP with O 2 And CF (compact F) 4 Or CHF 4 The etching power is 300W, the pressure is 2Pa, and the etching time is about 1 min.
5) Coating photoresist on the epitaxial wafer obtained in the step 4), defining an electrode coverage area by photoetching by taking the photoresist as a mask plate, preparing a metal electrode on the electrode coverage area by adopting an electron beam evaporation method, a thermal evaporation method, a physical vapor deposition method or a magnetron sputtering method, putting the epitaxial wafer with the prepared metal electrode into photoresist removing liquid, and removing the residual photoresist of a non-electrode area by ultrasonic.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Claims (10)

1. The size-adjustable light-emitting chip for the optical sighting telescope is characterized by comprising an epitaxial wafer (1); the epitaxial wafer (1) comprises a substrate (11), a bottom epitaxial layer (12), an active layer (13) and a top epitaxial layer (14) from bottom to top in sequence; the surface of the epitaxial wafer (1) is provided with an etching area and a plurality of light-emitting areas, an insulating medium layer (3) is paved in the etching area, and the insulating medium layer (3) extends from a top epitaxial layer (14) to a bottom epitaxial layer (12); the light-emitting areas are concentrically arranged and sequentially arranged from inside to outside, the light-emitting areas are separated by an insulating medium layer (3), and an electrode (4) is arranged on the top epitaxial layer (14) corresponding to each light-emitting area;
when the light emitting chip is used as a light source in an optical sighting telescope with a spectroscope, the patterns of the light source entering eyes formed by two adjacent light emitting areas at the spectroscope overlap into one pattern.
2. The light-emitting chip with adjustable size for an optical sighting telescope of claim 1, wherein the innermost light-emitting area of the plurality of light-emitting areas is circular, the other light-emitting areas are circular, and the diameters of the light-emitting areas are sequentially increased from inside to outside.
3. The size-adjustable light emitting chip for an optical sighting telescope according to claim 1, characterized in that the substrate (11) is GaN, sapphire, silicon wafer, siC or CuW.
4. The size-tunable light emitting chip for an optical sighting telescope according to claim 1, characterized in that the bottom epitaxial layer (12) includes one or several of buffer layer, n-GaN, DBR and p-GaN.
5. The size-tunable light emitting chip for an optical sighting telescope according to claim 1, characterized in that the top epitaxial layer (14) comprises one or several of n-GaN, DBR and p-GaN.
6. The size-adjustable light emitting chip for an optical sighting telescope according to claim 1, characterized in that the material of the active layer (13) is one or more of InGaN, alGaN and GaN.
7. The size-adjustable light-emitting chip for an optical sighting telescope according to claim 1, characterized in that the electrode (4) is a metal electrode.
8. The method for manufacturing a size-adjustable light emitting chip for an optical sighting telescope according to any one of claims 1 to 7, characterized by comprising:
s1, coating photoresist on an epitaxial wafer (1), and defining an etching area and a non-etching area through photoetching, wherein the non-etching area corresponds to a light-emitting area;
s2, etching the top epitaxial layer (14), the active layer (13) and part of the bottom epitaxial layer (12) in the etching area, and removing the residual photoresist;
s3, preparing an insulating medium layer (3) in an etching area on the epitaxial wafer obtained in the step S2;
and S4, coating photoresist on the epitaxial wafer obtained in the step S3, defining an electrode coverage area through photoetching according to the light-emitting area, preparing an electrode in the electrode coverage area, and removing the residual photoresist.
9. The method for manufacturing a light emitting chip with adjustable size for an optical sighting telescope according to claim 8, wherein the S3 specifically includes: and (3) preparing an insulating medium layer (3) in an etching area on the epitaxial wafer obtained in the step (S2) by adopting an electron beam evaporation method, a thermal evaporation method, a physical vapor deposition method or a magnetron sputtering method, and defining the coverage area of the insulating medium layer (3) through photoetching or ICP etching so that the insulating medium layer (3) covers the etching area.
10. An optical sighting telescope, characterized by comprising a light source and a spectroscope, wherein the light source is the light-emitting chip with adjustable size for the optical sighting telescope according to any one of claims 1-7, the emitted light of the light-emitting chip is vertically incident on the spectroscope, and the patterns of the light-entering sources formed at the spectroscope by two adjacent light-emitting areas overlap into one pattern.
CN202410099688.7A 2024-01-24 2024-01-24 Size-adjustable light-emitting chip for optical sighting telescope and preparation method thereof Pending CN117613168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410099688.7A CN117613168A (en) 2024-01-24 2024-01-24 Size-adjustable light-emitting chip for optical sighting telescope and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410099688.7A CN117613168A (en) 2024-01-24 2024-01-24 Size-adjustable light-emitting chip for optical sighting telescope and preparation method thereof

Publications (1)

Publication Number Publication Date
CN117613168A true CN117613168A (en) 2024-02-27

Family

ID=89944750

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410099688.7A Pending CN117613168A (en) 2024-01-24 2024-01-24 Size-adjustable light-emitting chip for optical sighting telescope and preparation method thereof

Country Status (1)

Country Link
CN (1) CN117613168A (en)

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB183936A (en) * 1921-05-03 1922-08-03 Arthur Cyril Webb Aldis Improvements relating to optical sighting, measuring and like instruments
JPS58100814A (en) * 1982-10-18 1983-06-15 Asia Optical Kk Target scope
JPS61274375A (en) * 1985-05-29 1986-12-04 Matsushita Electric Ind Co Ltd Electronic photograph recording apparatus
WO2003056876A2 (en) * 2001-12-14 2003-07-10 Digital Optics International Corporation Uniform illumination system
CN1933197A (en) * 2005-07-13 2007-03-21 阿瓦戈科技Ecbuip(新加坡)股份有限公司 Light emitting diode with at least two light emitting zones and method for manufacture
US20100148147A1 (en) * 2008-12-17 2010-06-17 Palo Alto Research Center Incorporated Monolithic white and full-color light emitting diodes using selective area growth
CN102269541A (en) * 2011-08-16 2011-12-07 中国兵器工业第二〇五研究所 Dynamic sighting device for gunner sighting lens of self-propelled anti-aircraft gun
US20140034985A1 (en) * 2011-04-01 2014-02-06 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode having increased light extraction
CN207365807U (en) * 2017-10-10 2018-05-15 昆明荣者光电科技发展有限公司 Multifunction laser aims at mirror
KR20180097468A (en) * 2017-02-23 2018-08-31 한국산업기술대학교산학협력단 Micro-light emitting diode light sources for sighting device and method for manufacturing the same
CN109524879A (en) * 2018-12-29 2019-03-26 苏州长光华芯半导体激光创新研究院有限公司 Independent switch formula area source VCSEL and preparation method thereof
CN209295783U (en) * 2018-12-13 2019-08-23 深圳市捍卫者安全装备有限公司 A kind of laser emitter gun sight optical axis combined into one apparatus
JP2019174569A (en) * 2018-03-27 2019-10-10 株式会社ニコンビジョン Optical device
CN112750922A (en) * 2019-10-31 2021-05-04 山东浪潮华光光电子股份有限公司 Light-emitting diode with variable patterns and preparation method thereof
CN113531438A (en) * 2021-07-29 2021-10-22 福建中科芯源光电科技有限公司 Lamp with adjustable light emitting angle
US20220065585A1 (en) * 2020-09-02 2022-03-03 Range Tactics Llc Systems and methods for sighting firearms
CN114335282A (en) * 2020-10-09 2022-04-12 山东浪潮华光光电子股份有限公司 Variable-pattern light-emitting diode, preparation method thereof and reflective sighting telescope
CN116632130A (en) * 2023-04-18 2023-08-22 深圳市志奋领科技有限公司 Photoelectric sensor with adjustable light spot size and method
CN117116962A (en) * 2023-08-31 2023-11-24 中山市华南理工大学现代产业技术研究院 Micro-size LED (light-emitting diode) forward-mounted array chip and preparation method thereof

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB183936A (en) * 1921-05-03 1922-08-03 Arthur Cyril Webb Aldis Improvements relating to optical sighting, measuring and like instruments
JPS58100814A (en) * 1982-10-18 1983-06-15 Asia Optical Kk Target scope
JPS61274375A (en) * 1985-05-29 1986-12-04 Matsushita Electric Ind Co Ltd Electronic photograph recording apparatus
WO2003056876A2 (en) * 2001-12-14 2003-07-10 Digital Optics International Corporation Uniform illumination system
CN1933197A (en) * 2005-07-13 2007-03-21 阿瓦戈科技Ecbuip(新加坡)股份有限公司 Light emitting diode with at least two light emitting zones and method for manufacture
US20100148147A1 (en) * 2008-12-17 2010-06-17 Palo Alto Research Center Incorporated Monolithic white and full-color light emitting diodes using selective area growth
US20140034985A1 (en) * 2011-04-01 2014-02-06 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode having increased light extraction
CN102269541A (en) * 2011-08-16 2011-12-07 中国兵器工业第二〇五研究所 Dynamic sighting device for gunner sighting lens of self-propelled anti-aircraft gun
KR20180097468A (en) * 2017-02-23 2018-08-31 한국산업기술대학교산학협력단 Micro-light emitting diode light sources for sighting device and method for manufacturing the same
CN207365807U (en) * 2017-10-10 2018-05-15 昆明荣者光电科技发展有限公司 Multifunction laser aims at mirror
JP2019174569A (en) * 2018-03-27 2019-10-10 株式会社ニコンビジョン Optical device
CN209295783U (en) * 2018-12-13 2019-08-23 深圳市捍卫者安全装备有限公司 A kind of laser emitter gun sight optical axis combined into one apparatus
CN109524879A (en) * 2018-12-29 2019-03-26 苏州长光华芯半导体激光创新研究院有限公司 Independent switch formula area source VCSEL and preparation method thereof
CN112750922A (en) * 2019-10-31 2021-05-04 山东浪潮华光光电子股份有限公司 Light-emitting diode with variable patterns and preparation method thereof
US20220065585A1 (en) * 2020-09-02 2022-03-03 Range Tactics Llc Systems and methods for sighting firearms
CN114335282A (en) * 2020-10-09 2022-04-12 山东浪潮华光光电子股份有限公司 Variable-pattern light-emitting diode, preparation method thereof and reflective sighting telescope
CN113531438A (en) * 2021-07-29 2021-10-22 福建中科芯源光电科技有限公司 Lamp with adjustable light emitting angle
CN116632130A (en) * 2023-04-18 2023-08-22 深圳市志奋领科技有限公司 Photoelectric sensor with adjustable light spot size and method
CN117116962A (en) * 2023-08-31 2023-11-24 中山市华南理工大学现代产业技术研究院 Micro-size LED (light-emitting diode) forward-mounted array chip and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SERGIO BONAQUE-GONZÁLEZ等: "The optics of the human eye at 8.6 μm resolution", 《SCIENTIFIC REPORTS》, vol. 11, 2 December 2021 (2021-12-02) *
李维善;单宏;高今朝;阎继华;杨刚;王虹达;张文胜;王宏伟;于梅霞;: "通用型数字鱼眼镜头检测系统的设计", 应用光学, no. 02, 15 March 2018 (2018-03-15) *

Similar Documents

Publication Publication Date Title
US7129528B2 (en) Electromagnetic radiation emitting semiconductor chip and procedure for its production
CN108172673B (en) Manufacturing method and structure of distributed Bragg reflector pattern for LED flip chip
CN105702820B (en) The reversed polarity AlGaInP base LED and its manufacturing method of surface covering ITO
US20120112218A1 (en) Light Emitting Diode with Polarized Light Emission
CN112018223B (en) Thin film flip structure Micro-LED chip with transfer printing of bonding layer and preparation method thereof
CN108233181B (en) Suspended GaN thin film laser integrated with resonant grating microcavity and preparation method thereof
CN102130285A (en) Light emitting diode and manufacturing method thereof
CN108878602A (en) A kind of miniature LED chip manufacture of three primary colours vertical structure and transfer method
US11955583B2 (en) Flip chip micro light emitting diodes
CN213184332U (en) Inverted ultraviolet light-emitting diode chip
CN112750922B (en) Light-emitting diode with variable patterns and preparation method thereof
CN104218134A (en) LED (Light Emitting Diode) vertical chip structure with special coarsening morphology and preparation method thereof
CN109273573B (en) LED chip with vertical structure, reflecting electrode and preparation method thereof
KR100672077B1 (en) Method of manufacturing light emitting device
WO2012062016A1 (en) Light emitting diode and manufacturing method thereof, light emitting device
CN114335282A (en) Variable-pattern light-emitting diode, preparation method thereof and reflective sighting telescope
CN117613168A (en) Size-adjustable light-emitting chip for optical sighting telescope and preparation method thereof
CN109378378B (en) Vertical structure LED chip with reflecting electrode and preparation method thereof
KR20090016438A (en) Laser lift-off led with improved light extraction
CN102064253A (en) Light-emitting diode and manufacture method thereof
CN110649130A (en) Ultraviolet light-emitting diode and preparation method thereof
KR101321994B1 (en) Light emitting diode having improved light extraction efficiency and method for manufacturing the same
CN109326702A (en) A kind of LED chip and preparation method thereof with annular electrode structure
CN116525737A (en) GaAs-based flip-chip Mini LED chip and preparation method thereof
CN113299806A (en) Flip RCLED chip based on planar substrate and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination