CN116632130A - Photoelectric sensor with adjustable light spot size and method - Google Patents
Photoelectric sensor with adjustable light spot size and method Download PDFInfo
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- CN116632130A CN116632130A CN202310414992.1A CN202310414992A CN116632130A CN 116632130 A CN116632130 A CN 116632130A CN 202310414992 A CN202310414992 A CN 202310414992A CN 116632130 A CN116632130 A CN 116632130A
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 24
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- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract description 26
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 22
- 230000001788 irregular Effects 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
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- 230000008859 change Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 4
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- 238000001914 filtration Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The application discloses a photoelectric sensor with adjustable light spot size and a method thereof, belonging to the technical field of photoelectric sensors. The application can adjust the size of the light spot only by switching the function of the sensor, thereby realizing the technical effects of meeting the detection requirements of different scenes, having wide use scenes and simple adjustment and being beneficial to improving the production efficiency.
Description
Technical Field
The application belongs to the technical field of photoelectric sensors, and particularly relates to a photoelectric sensor with an adjustable light spot size and a method.
Background
The photoelectric sensor is a sensor for detecting an object by using light as a detection means, and a light emitting unit of the industrial photoelectric sensor generally adopts an LED as a light source, and the LED has the advantages of high brightness, long service life and the like. After the light beams emitted by the LEDs are converged by the lens, light spots with specific shapes are formed when the light beams irradiate a detection object within a detection distance, part of the light irradiated to the detection object is reflected back, the light beams are projected to the photoelectric detection element through the receiving lens, an electric signal is generated after the photoelectric detection unit detects the light beams, the electric signal is sent to the signal processing unit, and finally a detection result is output to the outside.
Currently, in the technology of photoelectric sensors, a general LED is generally used as a light source of the photoelectric sensor, and a light emitting area of a light emitting chip of the LED is an integral body, and a spot size is not adjustable at a fixed distance after lens convergence. According to the lens imaging principle, if the spot size is to be adjusted, the lens must be replaced while adjusting the lens-to-LED distance. However, in the actual detection process, it is necessary to detect objects of various shapes and sizes, and when detecting objects of small size such as various wires, it is necessary that the beam concentration spot is relatively small. When detecting objects with larger sizes, such as perforated PCB boards, larger spots are necessary, otherwise, the use of a small spot sensor is prone to missed detection. Since the photoelectric sensors cannot detect objects with different sizes, after the detected objects change, the photoelectric sensors need to be replaced, and then the installation and debugging are needed again. The whole production equipment can be stopped, the production efficiency is reduced, and the production cost is increased. In summary, in the existing photoelectric sensor technology, the size of the photoelectric sensor light spot is not adjustable, so that the detection requirements of different scenes cannot be met, and the technical problem of production efficiency is reduced.
Disclosure of Invention
The application aims to solve the technical problems that the size of a photoelectric sensor light spot is not adjustable, the detection requirements of different scenes cannot be met, and the production efficiency is reduced.
In order to solve the technical problems, the application provides a photoelectric sensor with adjustable light spot size, which comprises a light source, wherein the light source comprises a substrate, a first type semiconductor layer, a light emitting layer and a second type semiconductor layer which are sequentially stacked, at least two independent light emitting areas and an insulating groove for isolating the adjacent two independent light emitting areas, the insulating groove at least penetrates through the light emitting layer, and the insulating groove can be used for accommodating an insulator.
Further, the at least two independent light emitting regions include a central independent light emitting region in the central region and an extended independent light emitting region extending outwardly from the central independent light emitting region.
Further, the photoelectric sensor further includes: the first control circuit is used for controlling the central independent luminous area to be on or off, and the second control circuit is used for controlling the extending independent luminous area to be on or off.
Further, the photoelectric sensor further includes: and the control circuit is connected with the independent luminous areas and is used for controlling the corresponding independent luminous areas to be on or off.
Further, the at least two independent light emitting regions include a central independent light emitting region located in a central region, two extended independent light emitting regions extending outwardly from the central independent light emitting region, and one extended independent light emitting region located between the central independent light emitting region and the other extended independent light emitting region.
Further, the photoelectric sensor further includes: the LED display device comprises a first control circuit connected with the central independent luminous area, a second control circuit connected with one extending independent luminous area and a third control circuit connected with the other extending independent luminous area, wherein the first control circuit is used for controlling the central independent luminous area to be on or off, the second control circuit is used for controlling the one extending independent luminous area to be on or off, and the third control circuit is used for controlling the other extending independent luminous area to be on or off.
Further, the first control circuit, the second control circuit and the third control circuit are all arranged in parallel.
Further, the extended independent light-emitting region comprises a plurality of first sub-light-emitting regions, an insulating groove is arranged between every two adjacent first sub-light-emitting regions, and the insulating groove extends into the central independent light-emitting region along the length extending direction of the insulating groove; the other extended independent light emitting region comprises two second sub light emitting regions, and the two second sub light emitting regions are positioned at two sides of the one extended independent light emitting region.
According to a further aspect of the application, there is also provided a method of spot size adjustment, the method comprising: sequentially growing a first type semiconductor layer, a light emitting layer and a second type semiconductor layer on a substrate; forming at least two independent light emitting areas by forming an insulating groove penetrating at least the light emitting layer; an insulator is deposited within the insulating trench.
Further, the method further comprises: and controlling each independent luminous area to be on or off according to a preset light spot shape so as to form light spots with required size.
The beneficial effects are that:
the application provides a photoelectric sensor with adjustable light spot size, which is formed by sequentially stacking a substrate, a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer, wherein an insulating groove at least penetrates through the light-emitting layer, and an insulator can be accommodated in the insulating groove so as to form at least two independent light-emitting areas. In the actual detection process, each formed independent luminous area can emit light independently, and the size of the light spot can be changed without adjusting a lens. When small light spots are needed for detecting tiny objects, the light can be controlled to emit light in one independent light emitting area, and other independent light emitting areas do not emit light, so that the size of the light spots is adjusted to be small. When large light spots are needed for detecting large irregular objects, the light can be controlled to emit light in a plurality of independent light emitting areas at the same time, and the size of the light spots is adjusted to be large. Then can detect small object, also can detect great irregular object simultaneously, just need not change different sensors after being detected object changes, realize that photoelectric sensor can detect the object of equidimension not, be favorable to improving production efficiency. Therefore, the size of the light spot can be adjusted only by switching the functions of the sensor, the detection requirements of different scenes are met, the use scene is wide, the adjustment is simple, and the production efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a central independent light emitting region in a photoelectric sensor with adjustable spot size according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of an extended independent light emitting region in a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of another extended independent light emitting region in a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a central independent light emitting region in a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
fig. 7 is a schematic structural diagram II of an extended independent light emitting region in a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
FIG. 8 is a schematic diagram of another structure of an extended independent light emitting region in a photoelectric sensor with adjustable spot size according to an embodiment of the present application;
fig. 9 is a schematic structural diagram of an insulation groove in a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
FIG. 10 is a schematic diagram I of a control circuit in a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
FIG. 11 is a schematic diagram II of a control circuit in a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
FIG. 12 is a schematic diagram III of a control circuit in a photoelectric sensor with adjustable light spot size according to an embodiment of the present application;
fig. 13 is a flowchart of a method for adjusting a light spot size according to an embodiment of the present application.
Detailed Description
The application discloses a photoelectric sensor with adjustable light spot size, which is characterized in that a substrate 1, a first type semiconductor layer 2, a light-emitting layer 3 and a second type semiconductor layer 4 are sequentially laminated, an insulating groove 6 at least penetrates through the light-emitting layer 3, and an insulator can be contained in the insulating groove 6 to form at least two independent light-emitting areas. In the actual detection process, each formed independent luminous area can emit light independently, and the size of the light spot can be changed without adjusting a lens. When small light spots are needed for detecting tiny objects, the light can be controlled to emit light in one independent light emitting area, and other independent light emitting areas do not emit light, so that the size of the light spots is adjusted to be small. When large light spots are needed for detecting large irregular objects, the light can be controlled to emit light in a plurality of independent light emitting areas at the same time, and the size of the light spots is adjusted to be large. Then can detect small object, also can detect great irregular object simultaneously, just need not change different sensors after being detected object changes, realize that photoelectric sensor can detect the object of equidimension not, be favorable to improving production efficiency. Therefore, the size of the light spot can be adjusted only by switching the functions of the sensor, the detection requirements of different scenes are met, the use scene is wide, the adjustment is simple, and the production efficiency is improved.
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments obtained by a person skilled in the art based on the embodiments of the present application are within the scope of the present application; wherein reference to "and/or" in this embodiment indicates and/or two cases, in other words, reference to a and/or B in the embodiments of the present application indicates two cases of a and B, A or B, and describes three states in which a and B exist, such as a and/or B, and indicates: only A and not B; only B and not A; includes A and B.
It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments. Spatially relative terms, such as "below," "above," and the like, may be used herein to facilitate a description of one element or feature's relationship to another element or feature. It will be understood that the spatially relative terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" would then be oriented "on" other elements or features. Thus, the exemplary term "below" may include both above and below orientations. The device may be oriented (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein interpreted accordingly.
Also, in embodiments of the present application, when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When a component is considered to be "connected" to another component, it can be directly connected to the other component or intervening components may also be present. When an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. The terms "vertical", "horizontal", "left", "right" and the like are used in the embodiments of the present application for illustrative purposes only and are not intended to limit the present application.
Example 1
Referring to fig. 1, fig. 2, fig. 3, fig. 4, fig. 5, fig. 6, fig. 7, fig. 8, and fig. 9, fig. 1 is a schematic diagram of a first structure of an optical sensor with adjustable light spot size provided by an embodiment of the present application, fig. 2 is a schematic diagram of a central independent light emitting area 51 in an optical sensor with adjustable light spot size provided by an embodiment of the present application, fig. 3 is a schematic diagram of a first structure of an extended independent light emitting area 52 in an optical sensor with adjustable light spot size provided by an embodiment of the present application, fig. 4 is a schematic diagram of a second structure of a second extended independent light emitting area 53 in an optical sensor with adjustable light spot size provided by an embodiment of the present application, fig. 5 is a schematic diagram of a second structure of an optical sensor with adjustable light spot size provided by an embodiment of the present application, fig. 6 is a schematic diagram of a second structure of an extended independent light emitting area 52 in an optical sensor with adjustable light spot size provided by an embodiment of the present application, and fig. 7 is a schematic diagram of a second structure of an extended independent light emitting area 53 in an optical sensor with adjustable light spot size provided by an embodiment of the present application. The embodiment of the application provides a photoelectric sensor with adjustable light spot size, which comprises a substrate 1, a first type semiconductor layer 2, a light emitting layer 3 and a second type semiconductor layer 4 which are sequentially stacked, at least two independent light emitting areas and an insulating groove 6 for isolating the adjacent two independent light emitting areas, wherein the substrate 1, the first type semiconductor layer 2, the light emitting layer 3 and the second type semiconductor layer 4 which are sequentially stacked, the at least two independent light emitting areas and the insulating groove 6 for isolating the adjacent two independent light emitting areas are respectively subjected to the following detailed description:
for the substrate 1, the first type semiconductor layer 2, the light emitting layer 3, and the second type semiconductor layer 4, which are stacked in this order:
the first type layer is an n-type layer, the second type layer is a p-type layer, the light emitting layer 3 is located between the first type semiconductor layer 2 and the second type semiconductor layer 4, and the light emitting layer 3 can be used to emit a light beam.
Specifically, the first type semiconductor layer 2, the light emitting layer 3, and the second type semiconductor layer 4 may be sequentially stacked on the substrate 1 in a bottom-to-top direction, that is, a direction perpendicular to the substrate 1 toward the first type semiconductor layer 2. The first type semiconductor layer 2 may refer to an n-type layer and the second type semiconductor layer 4 may refer to a p-type layer.
For at least two independent light emitting regions, an insulating trench 6 for isolating adjacent two independent light emitting regions:
the at least two independent light emitting regions include a central independent light emitting region 51 located at the center and an extended independent light emitting region 52 extending outwardly from the central independent light emitting region 51, and the central independent light emitting region 51 is formed in a circular shape such that the formed light spot may be in a circular shape. The area of the extended independent light emitting region is larger than the area of the central independent light emitting region 51, that is, the area surrounded by the periphery of the extended independent light emitting region is larger than the area surrounded by the periphery of the central independent light emitting region 51, and the extended independent light emitting region can surround the central independent light emitting region 51 from the periphery of the central independent light emitting region 51. Alternatively, the at least two independent light emitting regions may include a central independent light emitting region 51 located at the center, two extended independent light emitting regions extending outwardly from the central independent light emitting region 51, and one extended independent light emitting region 52 located between the central independent light emitting region 51 and the other extended independent light emitting region 53. It will be appreciated by those skilled in the art that, in the photoelectric sensor with adjustable spot size provided in the embodiments of the present application, specific shapes of the central independent light emitting region 51, the one extended independent light emitting region 52 and the other extended independent light emitting region 53 are not limited, and only control needs to be implemented on the central independent light emitting region 51, the one extended independent light emitting region 52 and the other extended independent light emitting region 53, so that the central independent light emitting region 51, the one extended independent light emitting region 52 and the other extended independent light emitting region 53 can emit light individually, as shown in fig. 1 and fig. 9, the central independent light emitting region 51 may be in a circular shape, the surrounding edge of the one extended independent light emitting region 52 may be in a rectangular shape, and the surrounding edge of the other extended independent light emitting region 53 may be in a rectangular shape when viewed from a direction perpendicular to the light emitting layer 3. Alternatively, as shown in fig. 5 and 9, the central independent light emitting region 51 may be rendered circular, the peripheral edge closure of one extended independent light emitting region 52 may be rendered circular, and the peripheral edge closure of the other extended independent light emitting region 53 may be rendered circular, as viewed from the direction perpendicular to the light emitting layer 3, that is, both the one extended independent light emitting region 52 and the other extended independent light emitting region 53 may be rendered annular as a whole. Alternatively, the central independent light emitting region 51 may be rendered circular, the peripheral edge closure of one extended independent light emitting region 52 may be rendered elliptical, the peripheral edge closure of the other extended independent light emitting region 53 may be rendered elliptical, or the like, as viewed from a direction perpendicular to the light emitting layer 3. The extended independent light emitting region 52 includes a plurality of first sub light emitting regions, an insulating groove 6 is provided between each adjacent two of the first sub light emitting regions, and the insulating groove 6 extends into the central independent light emitting region 51 along a length extending direction of the insulating groove 6. Wherein the other extended independent light emitting region 53 includes two second sub light emitting regions, and the two second sub light emitting regions are located at both sides of the one extended independent light emitting region 52. In addition, the insulating trench 6 is formed to be recessed from the second type semiconductor layer 4 in a direction toward the substrate 1, that is, the insulating trench 6 is a recess formed to be recessed from the second type semiconductor layer 4 in a direction toward the light emitting layer 3. The insulation groove 6 penetrates through at least the light-emitting layer 3, and the insulation groove 6 penetrating through the light-emitting layer 3 can isolate the light-emitting layer 3 into a plurality of required light-emitting areas, such as a central independent light-emitting area 51, an extending independent light-emitting area 52 and another extending independent light-emitting area 53 which can independently emit light; alternatively, in an actual process, an insulating trench 6 may sequentially penetrate through the second type semiconductor layer 4, the light emitting layer 3, and the first type semiconductor layer 2, and the insulating trench 6 may extend into the substrate 1 in the stacking direction, and a space for accommodating an insulator may be provided inside the insulating trench 6. The photoelectric sensor with the adjustable light spot size provided by the embodiment of the application can further comprise control circuits connected with the independent light emitting areas, each control circuit is connected with a corresponding independent light emitting area, and the control circuits are used for controlling the corresponding independent light emitting areas to be on or off so that the corresponding independent light emitting areas are in light emission or not.
Specifically, the insulating trench 6 is recessed from the second type semiconductor layer 4 toward the substrate 1, the insulating trench 6 may penetrate the second type semiconductor layer 4, the light emitting layer 3 and the first type semiconductor layer 2, the bottom of the insulating trench 6 which is recessed is located inside the substrate 1, the second type semiconductor layer 4, the light emitting layer 3, the first type semiconductor layer 2 and the substrate 1 are separated by the insulating trench 6, and the second type semiconductor layer 4, the light emitting layer 3, the first type semiconductor layer 2 and the substrate 1 are isolated to form independent light emitting regions, that is, the adjacent two independent light emitting regions are isolated by the insulating trench 6, and an insulator such as SiO may be deposited inside the insulating trench 6 2 And insulating materials, so that two adjacent independent light-emitting areas are mutually insulated, and each independent light-emitting area can emit light independently. An independent light emitting region includes a three-dimensional region constituted by a substrate 1, a first type semiconductor layer 2, a light emitting layer 3, and a second type semiconductor layer 4 which are isolated by an insulating trench 6. As shown in fig. 9, a part of the substrate 1, the first type semiconductor layer 2, the light emitting layer 3 and the second type semiconductor layer 4 are isolated by an insulating trench 6, the insulating trench 6 can sequentially penetrate through the second type semiconductor layer 4, the light emitting layer 3 and the first type semiconductor layer 2 in the vertical direction, a part of the insulating trench 6 stretches into the substrate 1, each insulating trench 6 can be perpendicular to the substrate 1, the first type semiconductor layer 2, the light emitting layer 3 and the second type semiconductor layer 4 are parallel to each other, four independent light emitting areas capable of independently emitting light can be isolated by the insulating trench 6 in fig. 9, the four independent light emitting areas can share one electrode and are perpendicular to the second type semiconductorOne electrode can be respectively connected in four areas divided in the direction of the body layer 4 to realize the parallel connection of four independent light emitting areas. The structure and principle of dividing the plurality of independent light emitting areas are the same as those of dividing the four independent light emitting areas, and are not described again here. For example, a plurality of independent light-emitting areas capable of independently emitting light of the chip can be tightly integrated and packaged together, the plurality of independent light-emitting areas capable of independently emitting light can share a cathode, and meanwhile, a plurality of anode electrodes are adopted to respectively and independently control each independent light-emitting area, so that each independent light-emitting area can independently emit light or not emit light.
To illustrate the adjustment of the light emitting area and area of an LED light source by controlling the light emission or non-light emission of each independent light emitting area, respectively, the following two embodiments are now provided for the following detailed explanation: in the first embodiment, if the number of independent light emitting regions is two, the two independent light emitting regions may refer to the center independent light emitting region 51 located at the center of the second type semiconductor layer 4, and one extended independent light emitting region 52 extended outward from the center independent light emitting region 51, the center independent light emitting region 51 may be formed in a circular shape, the circumference of the extended independent light emitting region may be rounded to form a square shape, for example, the numerical range of the diameter of the center independent light emitting region 51 may be 0.1mm to 0.2mm, the numerical range of the side length of the extended independent light emitting region may be 0.21mm to 0.4mm, and if the diameter of the center independent light emitting region 51 is 0.2mm, the side length of the extended independent light emitting region is 0.21mm, the width of the insulation groove 6 for isolating the center independent light emitting region 51 and the extended independent light emitting region may be 0.1mm at this time. The central independent light emitting region 51 may be connected to a corresponding control circuit that may be used to control the central independent light emitting region 51 to be on or off such that the central independent light emitting region 51 is light emitting or not light emitting; the extended independent light emitting regions are also connected to corresponding control circuits for controlling the extended independent light emitting regions to be on or off such that the extended independent light emitting regions are light emitting or not, i.e., the central independent light emitting region 51 and the extended independent light emitting regions form a parallel circuit. When a tiny object needs to be detected, the corresponding control circuit can be used for controlling the central independent luminous area 51 to be a passage, and meanwhile, the corresponding control circuit is used for controlling the extending independent luminous area to be an open circuit, at the moment, the central independent luminous area 51 is luminous, the extending independent luminous area is non-luminous, the generated light spots are small light spots, the luminous area and area are reduced, and the detection of the tiny object can be met. When a larger irregular object needs to be detected, the central independent luminous area 51 can be controlled to be a passage by adopting the corresponding control circuit, and the extended independent luminous area is controlled to be a passage by adopting the corresponding control circuit, so that the central independent luminous area 51 is luminous, the extended independent luminous area is luminous, the generated light spots are large light spots, the luminous area and area are increased, and the detection of the larger irregular object can be met.
In the second embodiment, if the number of the independent light emitting regions is three, the three light emitting regions may refer to a central independent light emitting region 51 located at the center of the second type semiconductor layer 4, and two extended independent light emitting regions extending outward from the central independent light emitting region 51, the two extended independent light emitting regions may be one extended independent light emitting region 52 and another extended independent light emitting region 53, hereinafter referred to as the one extended independent light emitting region 52 as a first light emitting region, the other extended independent light emitting region 53 as a second light emitting region, the central independent light emitting region 51 may be circular, the periphery of the first light emitting region may be rounded to form a square, the periphery of the second light emitting region may be rounded to form a rectangle, the numerical range of the diameter of the central independent light emitting region 51 may be 0.1mm to 0.2mm, the numerical range of the side length of the first light emitting region may be 0.21mm to 0.4mm, the numerical range of the length of the second light emitting region may be 0.4mm to 0.8mm, and the diameter of the first light emitting region may be determined according to the specific requirements of the first light emitting region and the side length of the first light emitting region. The first light emitting region may be divided into 4 first sub-light emitting regions, and the 4 first sub-light emitting regions may be controlled by one control circuit, or the 4 first sub-light emitting regions may be controlled by one control circuit, respectively. The second light emitting region may be divided into 2 second sub-light emitting regions, and the 2 second sub-light emitting regions may be controlled by one control circuit, or the 2 second sub-light emitting regions may be controlled by one control circuit, respectively. The central independent light emitting region 51 may be connected to a corresponding control circuit for controlling the central independent light emitting region 51 to be on or off such that the central independent light emitting region 51 is light emitting or not light emitting; the first light-emitting area is also connected with a corresponding control circuit, and the circuit of the control circuit is used for controlling the first light-emitting area to be on or off so that the first light-emitting area emits light or does not emit light; the second light emitting region is also connected to a corresponding control circuit, and the circuit of the control circuit is used for controlling the second light emitting region to be on or off, so that the second light emitting region emits light or does not emit light, that is, the center independent light emitting region 51, the first light emitting region and the second light emitting region can form a parallel circuit. When a tiny object needs to be detected, the corresponding control circuit can be used for controlling the central independent luminous area 51 to be a passage, and meanwhile, the corresponding control circuit is used for controlling the first luminous area and the second luminous area to be an open circuit, at the moment, the central independent luminous area 51 presents luminescence, the first luminous area and the second luminous area both present non-luminescence, the generated light spots are small light spots, the reduction of luminous area and area is realized, and the detection of the tiny object can be met. When larger irregular objects need to be detected, the corresponding control circuit can be used for controlling the central independent luminous area 51 to serve as a passage, and meanwhile, the corresponding control circuit is used for controlling the first luminous area and the second luminous area to serve as passages, at the moment, the central independent luminous area 51 is luminous, the first luminous area and the second luminous area are luminous, the generated light spots are large light spots, the luminous area and the luminous area are increased, and the detection of the larger irregular objects can be met. Therefore, even if the detected object changes, the size of the light spot irradiated on the object can be adjusted according to actual needs only by changing the number of the luminous areas, so that the size of the light spot can be changed by adjusting the lens, and the production efficiency is improved.
In order to explain the control of the light emission or non-light emission of each light emitting region by the above-mentioned control circuit, a specific embodiment of controlling the above-mentioned center independent light emitting region 51, first light emitting region, and second light emitting region, respectively, using a first control circuit, a second control circuit, and a third control circuit is now provided for the following detailed explanation: as shown IN fig. 10, fig. 10 is a schematic diagram of a control circuit IN a photoelectric sensor with adjustable light spot size, vcc_in provides a stable power supply, resistor R6, capacitor C10 and capacitor C20 provide power supply filtering, pulse PWM1 controls on and off of triode Q2, resistor R19 is an LED pulse current load, the magnitude of current can be controlled by changing the resistance value, light emitting diode D4 is an LED display lamp, the circuit is a first control circuit, and the first control circuit can be connected with the central independent light emitting area 51. As shown IN fig. 11, fig. 11 is a schematic diagram two of a control circuit IN a photoelectric sensor with adjustable light spot size, vcc_in provides a stable power supply, resistor R51, capacitor C39 and capacitor C38 provide power supply filtering, PWM2 controls on and off of triode Q4, resistor R52 is an LED pulse current load, the magnitude of current can be controlled by changing the resistance value, light emitting diode D13 is an LED display lamp, the circuit is a second control circuit, and the second control circuit can be connected with the first light emitting area. As shown IN fig. 12, fig. 12 is a schematic diagram three of a control circuit IN a photoelectric sensor with adjustable light spot size, vcc_in provides a stable power supply, resistor R55, capacitor C41 and capacitor C40 provide power supply filtering, PWM3 controls on and off of triode Q5, resistor R56 is LED pulse current load, the magnitude of current can be controlled by changing the resistance value, light emitting diode D14 is an LED display lamp, the circuit is a third control circuit, and the third control circuit can be connected with the second light emitting area. Thus, the first control circuit shown in fig. 10, the second control circuit shown in fig. 11, and the third control circuit shown in fig. 12 may be used to independently control whether the center independent light emitting region 51, the first light emitting region, and the second light emitting region emit light, respectively. If three key switches are adopted for control, by pressing one key switch, the singlechip generates an interrupt, and the singlechip gives a control signal of a fixed period duty ratio to the PWM1, so that the central independent luminous area 51 can respectively control whether the first luminous area and the second luminous area emit light or not through the other two key switches by adopting the same principle, and the control of the light spot size is realized. Meanwhile, the light spot states can be displayed through the light emitting diode D4, the light emitting diode D13 and the light emitting diode D14, for example, when only one LED indicator lamp of the light emitting diode D4 is lighted, the light spot is the minimum light spot at the moment, and a tiny object can be detected; when only two LED indicator lamps of the LED D4 and the LED D13 are lighted, the light is a medium light spot at the moment; when three LED indicator lamps of the LED D4, the LED D13 and the LED D14 are all lighted, the LED indicator lamp represents the maximum light spot at the moment, and larger irregular objects can be detected. Alternatively, the display may be used to display different spot modes, such as a minimum spot mode, a medium spot mode and a maximum spot mode.
It should be noted that the above-mentioned LED light source having a plurality of light emitting areas, the emission lens, and the bracket for supporting and fixing may be used to form a light emitting unit, and the light receiving unit is formed of a receiving lens, a signal amplifying processing circuit, and a photodetector such as a silicon photodiode, wherein the light receiving lens and the photodetector are connected by the bracket, and the photodetector and the signal amplifying processing circuit are connected by a circuit board. The signal processing unit is formed by a circuit mainly comprising a singlechip, and is powered by a power supply, and the whole support is provided by a shell. According to the requirement of the detected object, the required small light spots or large light spots can be regulated by controlling the light emission or non-light emission of each light emitting area in the LED light source with a plurality of light emitting areas, and the emitted light beams meet the detected object within the detection distance after being converged by the emitting lens, so that the light spots with specific shapes can be formed. Since a part of light is reflected to the light receiving unit after the light beam irradiates the detected object, the light receiving unit receives the reflected light and then transmits the converted signal to the signal processing unit, and the detection result is output to the outside through the signal processing unit.
The application provides a photoelectric sensor with adjustable light spot size, which is formed by sequentially stacking a substrate 1, a first type semiconductor layer 2, a light-emitting layer 3 and a second type semiconductor layer 4, wherein an insulating groove 6 at least penetrates through the light-emitting layer 3, and an insulator can be accommodated in the insulating groove 6 so as to form at least two independent light-emitting areas. In the actual detection process, each formed independent luminous area can emit light independently, and the size of the light spot can be changed without adjusting a lens. When small light spots are needed for detecting tiny objects, the light can be controlled to emit light in one independent light emitting area, and other independent light emitting areas do not emit light, so that the size of the light spots is adjusted to be small. When large light spots are needed for detecting large irregular objects, the light can be controlled to emit light in a plurality of independent light emitting areas at the same time, and the size of the light spots is adjusted to be large. Then can detect small object, also can detect great irregular object simultaneously, just need not change different sensors after being detected object changes, realize that photoelectric sensor can detect the object of equidimension not, be favorable to improving production efficiency. Therefore, the size of the light spot can be adjusted only by switching the functions of the sensor, the detection requirements of different scenes are met, the use scene is wide, the adjustment is simple, and the production efficiency is improved.
In order to describe the method for adjusting the size of the light spot in detail, the embodiment of the application describes the photoelectric sensor for adjusting the size of the same light spot in detail, and based on the same inventive concept, the application also provides the method for adjusting the size of the light spot, and the detail is as shown in the second embodiment.
Example two
Referring to fig. 13, fig. 13 is a flowchart of a method for adjusting a light spot size according to an embodiment of the present application, and a second embodiment of the present application provides a method for adjusting a light spot size, which includes steps of S100, growing a first type semiconductor layer 2, a light emitting layer 3, and a second type semiconductor layer 4 on a substrate 1 in sequence; step S200, forming at least two independent light emitting areas by forming an insulating trench 6 penetrating at least the light emitting layer 3; step S300, depositing an insulator in the insulation groove 6. The second embodiment of the present application provides a method for adjusting a light spot size, which further includes controlling each of the independent light emitting areas to be on or off according to a preset light spot shape, so as to form a light spot with a required size. The preset spot shape is even a small spot required when detecting a minute object or a large spot required when detecting a large irregular object.
The application provides a method for adjusting the size of a light spot, which comprises the steps of sequentially growing a first type semiconductor layer 2, a light-emitting layer 3 and a second type semiconductor layer 4 on a substrate 1; forming at least two independent light emitting regions by forming an insulating trench 6 penetrating at least the light emitting layer 3; an insulator is deposited in the insulating trench 6. In the actual detection process, each formed independent luminous area can emit light independently, and the size of the light spot can be changed without adjusting a lens. When small light spots are needed for detecting tiny objects, the light can be controlled to emit light in one independent light emitting area, and other independent light emitting areas do not emit light, so that the size of the light spots is adjusted to be small. When large light spots are needed for detecting large irregular objects, the light can be controlled to emit light in a plurality of independent light emitting areas at the same time, and the size of the light spots is adjusted to be large. Then can detect small object, also can detect great irregular object simultaneously, just need not change different sensors after being detected object changes, realize that photoelectric sensor can detect the object of equidimension not, be favorable to improving production efficiency. Therefore, the size of the light spot can be adjusted only by switching the functions of the sensor, the detection requirements of different scenes are met, the use scene is wide, the adjustment is simple, and the production efficiency is improved.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solution of the present application, and not for limiting the same, and although the present application has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present application without departing from the spirit and scope of the technical solution of the present application, and all such modifications and equivalents are intended to be encompassed in the scope of the claims of the present application.
Claims (10)
1. A spot size adjustable photoelectric sensor, the photoelectric sensor comprising: the light source comprises a substrate, a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer which are sequentially stacked, at least two independent light-emitting areas and an insulating groove for isolating the adjacent two independent light-emitting areas, wherein the insulating groove at least penetrates through the light-emitting layer, and the insulating groove can be used for accommodating an insulator.
2. The spot size adjustable photoelectric sensor of claim 1, wherein: the at least two independent light emitting regions include a central independent light emitting region in the central region and an extended independent light emitting region extending outwardly from the central independent light emitting region.
3. The adjustable spot size photosensor of claim 2, further comprising: the first control circuit is used for controlling the central independent luminous area to be on or off, and the second control circuit is used for controlling the extending independent luminous area to be on or off.
4. The adjustable spot size photosensor of claim 1, further comprising: and the control circuit is connected with the independent luminous area and is used for controlling the independent luminous area to be on or off.
5. The spot size adjustable photoelectric sensor of claim 1, wherein: the at least two independent light emitting areas comprise a central independent light emitting area positioned in a central area and two extending independent light emitting areas which extend outwards from the central independent light emitting area, wherein one extending independent light emitting area is positioned between the central independent light emitting area and the other extending independent light emitting area.
6. The adjustable spot size photosensor of claim 5, further comprising: the LED display device comprises a first control circuit connected with the central independent luminous area, a second control circuit connected with one extending independent luminous area and a third control circuit connected with the other extending independent luminous area, wherein the first control circuit is used for controlling the central independent luminous area to be on or off, the second control circuit is used for controlling the one extending independent luminous area to be on or off, and the third control circuit is used for controlling the other extending independent luminous area to be on or off.
7. The adjustable spot size photosensor of claim 6, wherein: the first control circuit, the second control circuit and the third control circuit are all arranged in parallel.
8. The adjustable spot size photosensor of claim 5, wherein: the extended independent light-emitting area comprises a plurality of first sub light-emitting areas, an insulating groove is arranged between every two adjacent first sub light-emitting areas, and the insulating groove extends into the central independent light-emitting area along the length extending direction of the insulating groove; the other extended independent light emitting region comprises two second sub light emitting regions, and the two second sub light emitting regions are positioned at two sides of the one extended independent light emitting region.
9. A method for spot size adjustment, the method comprising:
sequentially growing a first type semiconductor layer, a light emitting layer and a second type semiconductor layer on a substrate;
forming at least two independent light emitting areas by forming an insulating groove penetrating at least the light emitting layer;
an insulator is deposited within the insulating trench.
10. The method of spot size adjustment according to claim 9, further comprising: and controlling each independent luminous area to be on or off according to a preset light spot shape so as to form light spots with required size.
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