CN117583742A - Laser high-efficiency precision machining equipment and method for diamond wafer - Google Patents
Laser high-efficiency precision machining equipment and method for diamond wafer Download PDFInfo
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- CN117583742A CN117583742A CN202311663817.2A CN202311663817A CN117583742A CN 117583742 A CN117583742 A CN 117583742A CN 202311663817 A CN202311663817 A CN 202311663817A CN 117583742 A CN117583742 A CN 117583742A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 254
- 239000010432 diamond Substances 0.000 title claims abstract description 254
- 238000003754 machining Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 58
- 238000005259 measurement Methods 0.000 claims abstract description 27
- 238000005498 polishing Methods 0.000 claims abstract description 22
- 235000012431 wafers Nutrition 0.000 claims description 234
- 238000012545 processing Methods 0.000 claims description 84
- 238000006073 displacement reaction Methods 0.000 claims description 71
- 238000012360 testing method Methods 0.000 claims description 18
- 238000002679 ablation Methods 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 12
- 239000004576 sand Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000012937 correction Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 230000007547 defect Effects 0.000 claims description 5
- 238000000608 laser ablation Methods 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 5
- 230000004048 modification Effects 0.000 claims description 5
- 238000012163 sequencing technique Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000005070 sampling Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012625 in-situ measurement Methods 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
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- 238000003912 environmental pollution Methods 0.000 description 1
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- 239000008204 material by function Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention provides laser efficient precision machining equipment for a diamond wafer, which comprises a base platform, a gantry supporting frame and an upper computer, wherein the gantry supporting frame is arranged on the upper side of the base platform, a horizontal operation platform module is arranged on the upper side of the base platform, a first laser light emitting module, an on-site measurement module, a second laser light emitting module, a first light path reflection module, a first laser, a second light path reflection module and a second laser are arranged on the gantry supporting frame, the first laser light emitting module, the on-site measurement module and the second laser light emitting module are arranged on the front side of the gantry supporting frame in a 'product' shape on the horizontal plane, and the first laser light emitting module, the on-site measurement module and the second laser light emitting module are arranged above the horizontal operation platform module, and the horizontal movement platform module, the first laser light emitting module, the on-site measurement module, the second laser light emitting module, the first laser and the second laser are all connected with the upper computer. The invention overcomes the problems of the prior mechanical grinding and polishing.
Description
Technical Field
The invention relates to the technical field of diamond processing, in particular to laser efficient and precise processing equipment and method for a diamond wafer.
Background
Diamond materials have excellent mechanical, physical and chemical properties, and find wide and wide application in various fields such as coated cutters, semiconductors, cold cathodes, heat sinks, high-energy and low-energy detectors, medical instruments and the like, and become key base materials for urgent needs of numerous industries.
The diamond wafer manufactured by the CVD (chemical vapor deposition) process often has bending and buckling deformation, which causes excessive deviation of the total thickness of the wafer and poor surface type precision, and coarse and different surface grains, which causes extremely rough surface, and the surface of the diamond wafer must be precisely processed before use, so as to obtain micron-level or even nano-level surface type precision and surface roughness. However, due to the high hardness, high wear resistance and good chemical stability of the CVD diamond material, the present common mainstream processing technique is adopted, so that the grinding and polishing are extremely difficult to process, and the defects of high time cost, large waste sheet risk, environmental pollution, harm to the health of operators and the like exist. At present, the market of CVD diamond functional materials is not mature, and how to realize high-efficiency precise processing of CVD diamond becomes a key core technical problem to be solved urgently.
The novel laser processing technology can effectively eliminate the defects of the grinding and polishing process, has the advantages of high processing efficiency, strong precision controllability, small deterioration influence area, no mechanical stress effect and the like, and can be used as a promising technology and breakthrough innovation. Moreover, the laser can effectively improve the original surface type precision and the morphology roughness of the workpiece surface without regard to the complexity of the original surface, and the flexible characteristic of the high degree of freedom can promote the laser to become a first choice means for precisely machining the diamond surface.
At present, laser processing is applied to marking, cutting, welding, punching, cleaning, surface modification and the like, but planarization processing and polishing processing aiming at surface type precision and surface roughness are freshly reported, so that the invention of the laser efficient precision processing equipment and the method for the diamond wafer is required to obtain the surface type precision of micron level and the surface roughness of nanometer level.
Disclosure of Invention
Aiming at the technical problems of lack of planarization processing and polishing processing aiming at surface type precision and surface roughness in the prior art, the invention provides laser efficient precision processing equipment and method for diamond wafers, which can perform non-contact efficient precision processing aiming at the diamond wafers with different sizes and different types, realize the surface planarization and polishing processing of the diamond wafers, obtain the surface type precision of micron level and the surface roughness of nanometer level, solve the problems of easy damage, easy fragmentation, easy deformation, low efficiency and the like of the traditional mechanical grinding and polishing method, and solve the processing problem of the diamond wafers.
In order to achieve the above purpose, the technical scheme of the invention is realized as follows: the utility model provides a high-efficient precision machining equipment of laser of diamond wafer, includes base platform, longmen support frame and host computer, longmen support frame sets up in base platform upside, base platform upside is provided with horizontal movement platform module, be provided with first laser light module, the measurement module in place, second laser light module, first light path reflection module, first laser, second light path reflection module and second laser, first laser light module, measurement module in place and second laser light module set up in longmen support frame front side with "article" font on the horizontal plane, first laser light module, measurement module in place and second laser light module set up in the top of horizontal movement platform module, first laser light module and first laser all are connected with first light path reflection module, second laser light module and second laser all are connected with second light path reflection module, horizontal movement platform module, first laser light module, measurement module in place, second laser light module, first laser and second laser all are connected with the host computer, the base platform is provided with the metal platform outside leveling.
The horizontal motion platform module comprises an X-direction linear motor, a Y-direction linear motor, a direct drive motor, a rotary round platform and a vacuum chuck, wherein the X-direction linear motor, the Y-direction linear motor, the direct drive motor, the rotary round platform and the vacuum chuck are sequentially arranged from bottom to top, a round jig is movably arranged on the upper side of the vacuum chuck, the round jig is concentric with a rotating shaft of the rotary round platform, the X-direction linear motor is arranged at the top of a base platform, the Y-direction linear motor is arranged at the sliding end of the X-direction linear motor, the direct drive motor is arranged at the sliding end of the Y-direction linear motor, the rotary round platform is arranged on the rotating shaft of the direct drive motor, the horizontal motion platform module further comprises a vacuumizing device, and the vacuumizing device is connected with a rotary joint in the center of the vacuum chuck after penetrating through a hollow structure of a ventilating hose.
The first laser light emitting module comprises a first Z-direction linear motion sliding table assembly, a first hollow DD motor and a first laser head assembly, wherein the first Z-direction linear motion sliding table assembly is vertically arranged, a fixed seat of the first Z-direction linear motion sliding table assembly is connected with the front side of the gantry supporting frame through a support, the first hollow DD motor is connected with a motion sliding table of the first Z-direction linear motion sliding table assembly, a rotating shaft of the first hollow DD motor is horizontally arranged, the first laser head assembly comprises a shell I, a two-dimensional vibrating mirror I and a focusing lens I, the two-dimensional vibrating mirror I and the focusing lens I are arranged in the shell I, the shell I is connected with the rotating shaft of the first hollow DD motor, the two-dimensional vibrating mirror I corresponds to a first light path reflecting module (7), the centers of the focusing lens I correspond to the centers of the two-dimensional vibrating mirror I, and a light emitting port of the focusing lens I faces to the rotating shaft perpendicular to the first hollow DD motor, and the first Z-direction linear motion sliding table assembly, the first hollow DD motor and the two-dimensional vibrating mirror I are all connected with an upper computer through a cable;
The first light path reflecting module comprises a laser beam expander I and at least one 45-degree reflecting prism I, wherein an light inlet of the laser beam expander I corresponds to the first laser, a light outlet of the laser beam expander I corresponds to the center of the 45-degree reflecting prism I, and the 45-degree reflecting prism I corresponds to the two-dimensional vibrating mirror I of the first laser head assembly;
the first laser is connected with the upper computer through a cable, the diameter of a laser beam emitted by the first laser is enlarged through a laser beam expander I, the laser beam is reflected by a 45-degree reflecting prism I, passes through a central hole of a first hollow DD motor, and then sequentially passes through a two-dimensional vibrating mirror I and a focusing lens I to be output, and the first laser is an infrared nanosecond pulse laser;
the second laser output module comprises a second Z-direction linear movement sliding table assembly, a second hollow DD motor and a second laser head assembly, wherein the second Z-direction linear movement sliding table assembly is vertically arranged, a fixing seat of the second Z-direction linear movement sliding table assembly is connected with the front side of the gantry supporting frame through a bracket, the second hollow DD motor is connected with a movement sliding table of the second Z-direction linear movement sliding table assembly, a rotating shaft of the second hollow DD motor is horizontally arranged, the second laser head assembly comprises a shell II, a two-dimensional vibrating mirror II and a focusing lens II, the two-dimensional vibrating mirror II and the focusing lens II are arranged in the shell II, the shell II is connected with the rotating shaft of the second hollow DD motor, the two-dimensional vibrating mirror II corresponds to the second optical path reflecting module, the focusing lens II corresponds to the center of the two-dimensional vibrating mirror II, and the light outlet of the focusing lens II faces towards the rotating shaft perpendicular to the second hollow DD motor, and the second Z-direction linear movement sliding table assembly, the second hollow DD motor and the two-dimensional vibrating mirror II are all connected with the upper computer through cables;
The second light path reflecting module comprises a laser beam expander II and at least one 45-degree reflecting prism II, the light inlet of the laser beam expander II corresponds to the second laser, the light outlet of the laser beam expander II corresponds to the center of the 45-degree reflecting prism II, and the 45-degree reflecting prism II corresponds to the two-dimensional vibrating mirror II of the second laser head assembly;
the second laser is connected with the upper computer through a cable, the diameter of a laser beam emitted by the second laser is enlarged through a laser beam expander II, the laser beam is reflected by a 45-degree reflecting prism II, passes through a central hole of a second hollow DD motor, and then sequentially passes through a two-dimensional vibrating mirror II and a focusing lens II to be output, and the second laser is an ultraviolet skin second pulse laser.
The on-site measurement module comprises a third Z-direction linear movement sliding table assembly and a non-contact high-precision displacement sensor, wherein the third Z-direction linear movement sliding table assembly and the non-contact high-precision displacement sensor are connected with the upper computer, a fixing seat of the third Z-direction linear movement sliding table assembly is fixedly connected with the gantry supporting frame, a movement sliding table of the third Z-direction linear movement sliding table assembly is connected with the non-contact high-precision displacement sensor, and a measuring beam outlet of the non-contact high-precision displacement sensor is vertically arranged downwards.
The application method of the laser high-efficiency precision machining equipment for the diamond wafer comprises the following steps:
s1: correcting the horizontal precision of the laser emergent track;
s2: setting processing parameters;
s3: detecting the initial surface type of the diamond wafer;
s4: carrying out laser planarization processing on the diamond wafer;
s5: performing laser polishing processing on the diamond wafer;
s6: and detecting the final processing result of the diamond wafer by using a detecting instrument.
The specific method for correcting the horizontal precision of the laser light emitting track in the step S1 is as follows:
s11: adsorbing and fixing a test sample on a vacuum chuck of a horizontal motion platform module, wherein the test sample can be an aluminum sheet with the surface uniformly painted;
s12: controlling a first laser light emitting module to sample a test sample wafer by laser at the center of a light emitting range, wherein a laser track is a straight line with the length larger than or equal to the diameter of a diamond wafer to be processed, the straight line is perpendicular to a rotating surface of the first laser head module, then rotating the first laser head module, and respectively sampling the test sample wafer by laser at different laser incidence angles;
s13: measuring the line width deviation of all the proofing lines on the test sample by using a microscope, and if the line width deviation of the same proofing line at different positions is not more than 1.5%, setting the track of the linear structure under the current laser incidence angle without correction; if the line width deviation is greater than 1.5%, correcting, and pulling the line position corresponding to the line width smaller position of the proofing line to a direction far away from the center and upwards on the basis of the existing linear line structure until the line width deviation of different positions of the proofing line is not greater than 1.5%;
S14: and (3) repeating the steps S11-S13 by using the second laser light emitting module to finish the correction of the second laser light emitting module under different laser incidence angles.
The specific method for setting the processing parameters in step S2 is as follows:
s21: placing a diamond wafer to be processed on a vacuum chuck of a horizontal motion platform module, setting the power of a first laser and the power of a second laser to be half of rated values, then respectively proofing one time when the laser normal focus and the laser Z-direction defocus are 0.02mm on the surface of the diamond wafer to be processed by using a first laser light emitting module and a second laser light emitting module, detecting the ablation depth of proofing, and setting the corresponding laser incident angle as a tentative laser incident angle parameter when the difference value of the two depths is the largest;
s22: under the tentative laser incidence angle parameters, respectively proofing the surface of the diamond wafer to be processed under different laser light-emitting power conditions, detecting the ablation depth and the edge morphology of the ablation area, and setting the corresponding laser light-emitting power of the laser as the tentative laser light-emitting power parameters when the ablation depth is maximum and the edge of the ablation area has no obvious cracks and other defects;
s23: under the tentative laser light-emitting power parameters, under the condition of different laser incidence angles, respectively proofing the surface of the diamond wafer to be processed once when the laser is in normal focus and the laser is out of focus in the Z direction by 0.02 mm; if the difference between the two depths is the largest under the condition of the tentative laser incidence angle parameter, the tentative laser incidence angle and the laser light-emitting power are considered as formal setting parameters; if the two depth differences are not the largest under the tentative laser incidence angle parameter condition, repeating the steps S22 and S23 under the incidence angle condition corresponding to the largest depth difference until the tentative laser incidence angle and the laser light emitting power condition are met and the two depth differences are the largest;
S24: setting laser single-point light emission under the set laser incidence angle and laser light emission power parameters, performing proofing test on the surface of the diamond wafer to be processed, measuring the length j and the width k of the etching pit, and then according to the central repetition frequency Q and the ideal light spot overlapping rate delta of pulse laser 1 And delta 2 The outgoing track length L sets the laser scanning velocity Vs and the feed velocity Vt, with the relation:
V S ＝Q·k·δ 1 ；
V t ＝V s ·j·δ 2 /L；
wherein Vs is in mm/s, vt is in mm/s, j is in mm, k is in mm, Q is in Hz, L is in mm, delta 1 And delta 2 The percentage is generally about 95%.
The specific method for detecting the initial surface type of the diamond wafer in the step S3 comprises the following steps:
s31: the method comprises the steps of adsorbing and fixing a circular jig on the upper side of a vacuum chuck, enabling the circular jig, the vacuum chuck and the circle center of a rotary round table to be arranged on the same vertical line, enabling the vertical line to coincide with a rotary shaft of the rotary round table, uniformly paving fine sand on the upper surface of the circular jig, placing a diamond wafer on the fine sand in the center of the circular jig, pressing the diamond wafer to enable the upper surface of the diamond wafer to be horizontally placed, pouring liquid glue on the fine sand on the periphery of the diamond wafer, and solidifying the glue;
S32: the upper computer is used for controlling the non-contact high-precision displacement sensor to irradiate the spot measuring beam vertically downwards, the circular jig drives the diamond wafer to move to the position right below the non-contact high-precision displacement sensor, the spot measuring point of the non-contact high-precision displacement sensor is positioned at the center of the diamond wafer, and the non-contact high-precision displacement sensor is used for acquiring lightThe fluctuation displacement value of the spot measurement point drives the diamond wafer to be at a speed V by an X-direction linear motor or a Y-direction linear motor f The method comprises the steps of performing uniform linear motion, simultaneously rotating a round table to drive a diamond wafer to rotate at a uniform speed at a rotating speed of Q circles per minute, enabling a light spot measuring point of a non-contact high-precision displacement sensor to form a spiral scanning measuring track on the surface of the diamond wafer, and stopping moving the diamond wafer when the light spot measuring point of the non-contact high-precision displacement sensor moves beyond the edge of the diamond wafer, and stopping measuring displacement data by the non-contact high-precision displacement sensor;
s33: analyzing the displacement data acquired by the non-contact high-precision displacement sensor, sequencing the acquired displacement data points according to the sequence, and then sequentially sequencing each data point z i Construction of the corresponding two-dimensional coordinates (x i ,y i ) According to the sampling frequency f of the non-contact high-precision displacement sensor, the calculation formula is as follows:
wherein V is f Is in units of mm/s; q is a positive integer, a unit circle; f units Hz; i represents the serial number of the data point and is a positive integer;
using each displacement data point z i And its two-dimensional coordinates (x) i ,y i ) Constitutes a three-dimensional space point (x i ,y i ,z i ) Drawing three-dimensional space points corresponding to all the acquired displacement data points in a three-dimensional space coordinate system to form an initial three-dimensional measurement map of the surface type of the diamond wafer, and finding z in the initial three-dimensional measurement map of the surface type of the diamond wafer i And calculating the maximum displacement data point and the two-dimensional coordinate thereof, and simultaneously calculating the polar difference value of all the acquired displacement data points, wherein the polar difference value is the planeness of the initial surface type of the diamond wafer.
The specific method for performing laser planarization processing on the diamond wafer in the step S4 is as follows:
s41: setting and starting a first laser light emitting module according to the laser incident angle and the laser light emitting power parameters obtained in the step S2, adjusting the angle of the first laser head module, enabling a light emitting opening of the first laser head module to irradiate laser vertically downwards, controlling a horizontal movement platform module to drive a diamond wafer to move to the position right below the light emitting opening of the first laser head module, enabling a laser spot output by the first laser light emitting module to cover and ablate the whole surface of the diamond wafer, enabling the diamond surface to be carbonized and blackened, and finishing modification treatment on the surface of the diamond wafer;
S42: according to the laser focal length F, the laser incident angle theta obtained in the step S2 and the z obtained in the step S3 i Maximum displacement data point z f And its two-dimensional coordinates (x) f ，y f ) The height coordinate of the upper surface of the circular jig is z 0 The coordinate of the vertical downward irradiation position of the light outlet of the first laser head assembly is (x) 0 ，y 0 ) Calculating Z-direction height coordinate corresponding to the light outlet of the first laser head assembly as Z according to the trigonometric function relation 0 +z i +F.cos θ, the horizontal position coordinates of the diamond wafer were calculated as (x) 0 +x f +F·sinθ，y 0 +y f ) Adjusting the height coordinate of the first laser head assembly and the horizontal position coordinate of the diamond wafer, focusing the laser beam emitted by the first laser head assembly on the highest point position of the surface of the diamond wafer according to the set incident angle, and then adjusting the height of the first laser head assembly upwards by 50-150 mu m;
s43: controlling an X-direction linear motor of the horizontal movement platform module to drive the diamond wafer to do linear reciprocating movement along the X direction within a certain range of a horizontal plane, wherein one end of a stroke range is based on the fact that laser is irradiated to the center of the diamond wafer, and the other end of the stroke range ensures that the laser is irradiated to the outside of the diamond wafer, so that the laser irradiation range only covers a half area of the surface of the diamond wafer, which is far away from the first laser head assembly;
S44: controlling a two-dimensional vibrating mirror of a first laser head assembly to form a linear scanning track along a Y direction on the surface of a diamond wafer, driving the diamond wafer to do uniform linear reciprocating motion along an X direction in a range set in S43 by a horizontal motion platform module, after a reciprocating stroke is completed, driving the diamond wafer to self-rotate by a certain angle by the horizontal motion platform module until the self-rotation angle of the diamond wafer is accumulated to 360 degrees, then feeding a displacement amount of 0.01-0.1 mm downwards by the height of the first laser head assembly, and repeating the reciprocating motion and the self-rotation laser ablation processing process;
s45: after step S44 is completed, detecting the surface of the processed diamond wafer according to the method of step S3, if the detected surface flatness value is within 30 mu m, turning the diamond wafer and placing the diamond wafer in the center of a round jig with fine sand paved on the surface removed, repeatedly executing step S32-S4 until the flatness of the current processing surface is smaller than that of the previous processing surface, stopping and turning again, repeating the steps, alternately processing two surfaces of the diamond wafer, so as to eliminate the deformation amount generated in the processing process of the diamond wafer until the surface type flatness of the two surfaces of the diamond wafer reaches the specified index, and completing the double-surface planarization processing of the diamond wafer.
The specific method for performing laser polishing processing on the diamond wafer in the step S5 is as follows:
s51: after the double-sided planarization processing of the diamond wafer is finished, enabling a second laser and a second laser head assembly according to the method and parameter setting in the step S2, and adjusting the height of the second laser head assembly and the reciprocating travel range of the diamond wafer according to the same method as the step S42 and the step S43;
s52: controlling a two-dimensional vibrating mirror of a second laser head assembly to form a linear scanning track along a Y direction on the surface of a diamond wafer, driving the diamond wafer to do uniform linear reciprocating motion along an X direction in a horizontal plane within a travel range set in the step S51, irradiating only a half area of the surface of the diamond wafer far away from the second laser head assembly by a laser beam emitted by the second laser head assembly, after the diamond wafer completes a reciprocating motion travel, automatically rotating for a certain angle, and repeating the laser irradiation process of the reciprocating motion until the self-rotation angle of the diamond wafer is accumulated to 360 degrees;
s53: keeping the height of the second laser head assembly unchanged, adjusting the laser incident angle of the second laser head assembly to increase by 1-5 degrees, repeating the step S51 to adjust the reciprocating movement range of the diamond wafer, repeating the step S52, continuously increasing the laser incident angle, repeating the step S51 to adjust the reciprocating movement range of the diamond wafer and the step S52 again until the spot energy of laser irradiation on the diamond surface reaches 1.05-1.1 times of the diamond material removal energy threshold value, and stopping increasing the laser incident angle; then maintaining the current laser incident angle, repeatedly executing the step S52 again until the spot energy of the laser irradiated on the diamond surface is smaller than the removal energy threshold value of the diamond material, and finishing the finish polishing processing of the diamond wafer surface;
S54: and turning over the diamond wafer, and repeating the steps S51, S52 and S53, thereby finishing the double-sided polishing of the diamond wafer.
The beneficial effects of the invention are as follows: (1) The invention provides laser efficient precision machining equipment and method for a diamond wafer, which realize non-contact efficient planarization machining and precision polishing machining of the surface of the diamond wafer, obtain micron-level surface precision and nano-level surface roughness, solve the problems of easiness in damage, easiness in fragmentation, easiness in deformation, low efficiency and the like of the traditional mechanical grinding and polishing method, and solve the difficult problem of machining the diamond wafer.
(2) The invention integrates the planarization processing and polishing processing of the diamond wafer into one device, and one device can realize the complete processing from blank piece to processed finished product piece, simultaneously meets the requirements of different project indexes such as bending degree, warping degree, surface roughness, total thickness deviation and the like, reduces the complexity of the processing technology and the equipment cost, and provides new equipment, a new method and a new idea for processing the diamond wafer.
(3) The non-contact processing mode of the invention can break through the size limitation, can carry out high-efficiency precise processing on diamond wafers with different sizes, can meet the precise processing requirements of different types of diamond sheets of a tool grade, a heat sink grade, an optical grade and an electronic grade, has strong applicability, can greatly reduce the processing cost of the diamond sheet, and can assist the popularization and application of diamond products.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of the equipment structure of the present invention.
FIG. 2 is a schematic flow chart of the method of the present invention.
Fig. 3 is a schematic view of laser irradiation processing ranges of the diamond wafer of the present invention when reciprocated.
In the figure, 1 is a base platform, 2 is a gantry supporting frame, 3 is a horizontal movement platform module, 4 is a first laser light emitting module, 5 is an in-situ measurement module, 6 is a second laser light emitting module, 7 is a first light path reflection module, 8 is a first laser, 9 is a second light path reflection module, 10 is a second laser, 12 is a diamond wafer to be processed, 13 is a laser irradiation processing range, 31 is an X-direction linear motor, 32 is a Y-direction linear motor, 33 is a direct drive motor, 34 is a rotary round table, 35 is a vacuum chuck, 41 is a first Z-direction linear movement sliding table component, 42 is a first hollow DD motor, 43 is a first laser head component, 51 is a third Z-direction linear movement sliding table component, 52 is a non-contact high-precision displacement sensor, 61 is a second Z-direction linear movement sliding table component, 62 is a second hollow DD motor, and 63 is a second laser head component.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without any inventive effort, are intended to be within the scope of the invention.
Example 1
As shown in fig. 1, the high-efficient precision machining equipment of laser of diamond wafer, including base platform 1, longmen support frame 2 and host computer, longmen support frame 2 sets up in base platform 1 upside, base platform 1 upside is provided with horizontal movement platform module 3, be provided with first laser light-emitting module 4 on the longmen support frame 2, in-place measurement module 5, second laser light-emitting module 6, first light path reflection module 7, first laser 8, second light path reflection module 9 and second laser 10 set up in longmen support frame 2 upside, first laser light-emitting module 4, in-place measurement module 5 and second laser light-emitting module 6 are in the horizontal movement platform module 3 top in order to "article" font setting in longmen support frame 2 front side on the horizontal movement platform module 3, first laser light-emitting module 4, in-place measurement module 5, second laser light-emitting module 6, first laser 8 and second laser light-emitting module 10 all link to each other with host computer 1 through last ground pin and host computer, the whole leveling platform is equipped with base platform 1, the cable wire bottom leveling platform is provided with, the whole leveling platform is provided with. The laser beam generated by the first laser 8 enters the first laser light emitting module 4 after passing through the first light path reflection module 7, and then is focused and emitted from the first laser light emitting module 4, and the laser beam generated by the second laser 10 enters the second laser light emitting module 6 after passing through the second light path reflection module 9, and then is focused and emitted from the second laser light emitting module 6.
The base platform 1 is mainly used for providing a supporting and fixing position for the gantry support frame 2, the horizontal movement platform module 3 and the metal shell, the gantry support frame 2 is mainly used for providing a supporting and fixing position for the first laser light emitting module 4, the in-situ measurement module 5, the second laser light emitting module 6, the first light path reflection module 7, the first laser 8, the second light path reflection module 9 and the second laser 10, and the horizontal movement platform module 3 is mainly used for placing a diamond wafer and driving the diamond wafer to move two-dimensionally and rotate automatically on a plane. The upper computer is used for controlling the movement of each motor, controlling the two-dimensional vibrating mirror to act, controlling the laser to output laser, receiving sensor signals, calculating and analyzing data, and realizing the function of the whole machine according to the set process rules. The metal shell is mainly used for wrapping and protecting all the components.
Specifically, the horizontal motion platform module 3 includes an X-direction linear motor 31, a Y-direction linear motor 32, a direct drive motor 33, a rotary round table 34, a vacuum chuck 35, which are sequentially arranged from bottom to top, and the X-direction linear motor 31, the Y-direction linear motor 32 and the direct drive motor 33 are all connected with an upper computer through cables. The X-direction linear motor 31 is fixed on the base platform 1, and the sliding end of the X-direction linear motor 31 can move linearly along the left-right X direction; the Y-direction linear motor 32 is fixed on the sliding end of the X-direction linear motor, and the sliding end of the Y-direction linear motor 32 can linearly move along the front-back Y direction; the direct drive motor 33 is fixed on the sliding end of the Y-direction linear motor 32, and a rotating round table 34 horizontally arranged is fixedly connected to the rotating shaft of the direct drive motor 33 to drive the rotating round table 34 to automatically rotate on the horizontal plane; a vacuum chuck 35 which is horizontally arranged is fixed on the rotary round table 34, and a round jig carrying a diamond wafer is adsorbed and fixed on the vacuum chuck 35; the upper surface rotation center of the vacuum chuck 35 is provided with a plurality of concentric positioning circles, so that the circular jig is ensured to be concentric with the rotation shaft of the rotary round table 34. The horizontal movement platform module 3 further comprises a vacuum pumping device, the vacuum pumping device is connected with the upper computer through a cable, the vacuum pumping device is connected with a vacuum chuck 35 through a ventilation hose, a rotary joint is arranged in the center of the lower surface of the vacuum chuck 35, the other end of the rotary joint is connected with the ventilation hose, and the ventilation hose penetrates through a rotary round table 34 and a direct-drive motor 33 of a hollow structure and is connected to the vacuum pumping device.
The first laser light emitting module 4 comprises a first Z-direction linear motion sliding table assembly 41, a first hollow DD motor 42 and a first laser head assembly 43, and the first Z-direction linear motion sliding table assembly 41 is vertically arranged. The first Z-direction linear motion sliding table assembly 41 comprises a support I, a fixing base I, a servo motor I, a ball screw I, a linear guide rail I and a motion sliding table I, wherein the fixing base I of the first Z-direction linear motion sliding table assembly 41 is connected with the front side of the gantry supporting frame 2 through the support I, and the motion sliding table I can move along the up-down Z-direction linear motion. The first hollow DD motor 42 is connected with a moving slipway I of the first Z-direction linear moving slipway assembly 41, and the rotating shaft of the first hollow DD motor 42 is horizontally arranged. The first laser head assembly 43 comprises a shell I, a two-dimensional vibrating mirror I and a focusing lens I, wherein the two-dimensional vibrating mirror I and the focusing lens I are arranged in the shell I and used for realizing focusing and two-dimensional movement of a laser spot in a vertical irradiation focal plane of a light outlet of the first laser head assembly 43, the shell I is connected with a rotating shaft of the first hollow DD motor 42, and the first laser head assembly 43 can rotate 360 degrees in a vertical plane through the rotation of the rotating shaft of the first hollow DD motor 42. The two-dimensional vibrating mirror I corresponds to the first light path reflecting module 7, the focusing lens I corresponds to the center of the two-dimensional vibrating mirror I, and the light outlet of the focusing lens I faces to the rotating shaft perpendicular to the first hollow DD motor 42. The first Z-direction linear motion sliding table assembly 41, the first hollow DD motor 42 and the two-dimensional vibrating mirror I are all connected with an upper computer through cables.
The first light path reflection module 7 comprises a laser beam expander I and at least one 45-degree reflection prism I. The laser beam expander I is used for expanding the diameter of a laser beam, the light inlet of the laser beam expander I corresponds to the first laser 8, the light outlet of the laser beam expander I corresponds to the center of the 45-degree reflecting prism I, the 45-degree reflecting prism I corresponds to the two-dimensional vibrating mirror I of the first laser head assembly 43, and the 45-degree reflecting prism I is used for realizing 90-degree deflection of the laser beam irradiation direction. The first laser 8 is a long wavelength, large pulse width, infrared nanosecond pulse laser.
The laser beam emitted by the first laser 8 passes through the central hole of the first hollow DD motor 42 of the first laser light emitting module 4 after being expanded in diameter by the laser beam expander I and reflected by the 45-degree reflecting prism I, then sequentially passes through the two-dimensional vibrating mirror I and the focusing lens I, is output and is focused at a set position in a focal plane to form a laser high-energy focusing point.
The second laser output module 6 comprises a second Z-direction linear motion sliding table assembly 61, a second hollow DD motor 62 and a second laser head assembly 63. The second Z-direction linear motion sliding table assembly 61 comprises a support II, a fixing seat II, a servo motor II, a ball screw II, a linear guide rail II and a motion sliding table II, wherein the fixing seat II of the second Z-direction linear motion sliding table assembly 61 is connected with the front side of the gantry supporting frame 2 through the support II, and the motion sliding table II can move vertically in a Z-direction. The second hollow DD motor 62 is connected with a moving slipway II of the second Z-direction linear moving slipway assembly 61, and the rotating shaft of the second hollow DD motor 62 is horizontally arranged. The second laser head assembly 63 includes a housing ii, a two-dimensional galvanometer ii and a focusing lens ii, the two-dimensional galvanometer ii and the focusing lens ii are disposed in the housing ii for realizing focusing and two-dimensional movement of the laser spot in the vertical irradiation focal plane of the light outlet of the second laser head assembly 63, the housing ii is connected with the rotation shaft of the second hollow DD motor 62, and the rotation shaft of the second hollow DD motor 62 rotates to enable the first laser head assembly 43 to rotate 360 ° in the vertical plane. The two-dimensional vibrating mirror II corresponds to the second light path reflecting module 9, the focusing lens II corresponds to the center of the two-dimensional vibrating mirror II, and the light outlet of the focusing lens II faces to the rotating shaft perpendicular to the second hollow DD motor 62. The second Z-direction linear motion sliding table assembly 61, the second hollow DD motor 62 and the two-dimensional vibrating mirror II are all connected with the upper computer through cables.
The second light path reflection module 9 comprises a laser beam expander II and at least one 45-degree reflection prism II. The laser beam expander II is used for expanding the diameter of a laser beam, an optical inlet of the laser beam expander II corresponds to the second laser 10, the centers of the laser beam expander II and the 45-degree reflecting prism II correspond to the two-dimensional vibrating mirror II of the second laser head assembly 63, and the 45-degree reflecting prism II is used for realizing 90-degree deflection of the laser beam irradiation direction. The second laser 10 is a short wavelength, small pulse width ultra-fast ultra-violet picosecond pulse laser.
The laser beam emitted by the second laser 10 passes through the central hole of the second hollow DD motor 62 of the second laser light emitting module 6 after the diameter of the laser beam is enlarged by the laser beam expander II and the laser beam is reflected by the 45-degree reflecting prism II, and then sequentially passes through the two-dimensional vibrating mirror II and the focusing lens II and then is output to be focused at a set position in a focal plane, so that a laser high-energy focusing point is formed.
The in-situ measurement module 5 comprises a third Z-direction linear movement sliding table assembly 51 and a non-contact high-precision displacement sensor 52, wherein the third Z-direction linear movement sliding table assembly 51 and the non-contact high-precision displacement sensor 52 are connected with an upper computer through cables, a fixing seat of the third Z-direction linear movement sliding table assembly 51 is fixedly connected with the gantry supporting frame 2, and the third Z-direction linear movement sliding table assembly 51 is connected with the non-contact high-precision displacement sensor 52. The third Z-direction linear motion sliding table assembly 51 comprises a servo motor III, a ball screw III, a linear guide rail III and a motion sliding table III which are sequentially arranged, the motion sliding table III of the third Z-direction linear motion sliding table assembly 51 is connected with the non-contact high-precision displacement sensor 52, the third Z-direction linear motion sliding table assembly 51 is fixed on the side surface of the gantry supporting frame, and the motion sliding table III can linearly move along the up-down Z direction; the non-contact high-precision displacement sensor 52 is fixed on the moving slide iii of the third Z-direction linear moving slide assembly 51, and irradiates a spot-like measuring beam vertically downward.
Example 2
As shown in fig. 2, the method for using the laser high-efficiency precision machining equipment for the diamond wafer comprises the following steps:
s1: the horizontal precision of the laser light-emitting track is corrected by the specific method:
s11: the test sample is adsorbed and fixed on a vacuum chuck of the horizontal movement platform module 3, and the test sample can be an aluminum sheet with the surface evenly painted;
s12: the first laser light emitting module 4 is controlled to sample a test sample by laser at the center of a light emitting range, a laser track is a straight line with the length being more than or equal to the diameter of a diamond wafer to be processed, the straight line is perpendicular to the rotating surface of the first laser head module 43, then the first laser head module 43 is rotated, and the test sample is subjected to laser sample making at different laser incidence angles;
s13: measuring the line width deviation of all the proofing lines on the test sample by using a microscope, and if the line width deviation of the same proofing line at different positions is not more than 1.5%, setting the track of the linear structure under the current laser incidence angle without correction; if the line width deviation is greater than 1.5%, correcting, and pulling the line position corresponding to the line width smaller position of the proofing line to a direction far away from the center and upwards on the basis of the existing linear line structure until the line width deviation of different positions of the proofing line is not greater than 1.5%;
S14: and (3) repeating the steps S11-S13 by using the second laser light emitting module 6, and completing the correction of the second laser light emitting module 6 under different laser incidence angles.
S2: the method comprises the following specific steps of:
s21: placing a diamond wafer to be processed on a vacuum chuck of a horizontal motion platform module 3, setting the power of a first laser 8 and the power of a second laser 10 to be half of rated values, then respectively proofing the surface of the diamond wafer to be processed by using a first laser light emitting module 4 and a second laser light emitting module 6 when laser normal focus and laser Z-direction defocusing are respectively 0.02mm, detecting the ablation depth of proofing, and setting the corresponding laser incident angle as a tentative laser incident angle parameter when the difference value of the two depths is the largest;
s22: under the tentative laser incidence angle parameters, respectively proofing the surface of the diamond wafer to be processed once under different laser light-emitting power conditions, detecting the ablation depth and the edge morphology of the ablation area, and setting the light-emitting power of the corresponding laser as tentative first laser 8 and second laser 10 light-emitting power parameters when the ablation depth is maximum and the edge of the ablation area has no obvious crack and other defects;
s23: under the light output power parameters of the tentative first laser 8 and the tentative second laser 10, under the condition of different laser incidence angles, respectively proofing the surface of the diamond wafer to be processed once when the laser is in normal focus and the laser is out of focus in Z direction by 0.02 mm; if the difference between the two depths is the largest under the condition of the tentative laser incidence angle parameter, the tentative laser incidence angle and the light output power of the first laser 8 and the second laser 10 are considered as formal setting parameters; if the two depth differences are not the largest under the condition of the tentative laser incidence angle parameter, repeating the steps S22 and S23 under the corresponding incidence angle condition when the depth differences are the largest until the tentative laser incidence angle and the light output power conditions of the first laser 8 and the second laser 10 are met and the two depth differences are the largest;
S24: at a set laser incident angle and the output power of the first laser 8 and the second laser 10Under the condition of parameters, setting single-point light emission of a laser, performing proofing test on the surface of a diamond wafer to be processed, measuring the length j and the width k of a pit to be etched, and then according to the central repetition frequency Q and the ideal light spot overlapping rate delta of pulse laser 1 And delta 2 Setting laser scanning rate V by light-emitting track length L s And feed rate V t . Since the output light spots of the first laser 8 and the second laser 10 have two overlapping modes of transverse and longitudinal directions, there are two ideal light spot overlapping rates. The relation is:
V S ＝Q·k·δ 1
V t ＝V s ·j·δ 2 /L；
wherein V is s In mm/s, V t In mm/s, j in mm, k in mm, Q in Hz, L in mm, delta 1 And delta 2 The percentage is generally about 95%.
S3: the method for detecting the initial surface type of the diamond wafer comprises the following steps:
s31: the method comprises the steps of adsorbing and fixing a circular jig on the upper side of a vacuum chuck 35, enabling the circular jig, the vacuum chuck 35 and the circle center of a rotary round table to be arranged on the same vertical line, enabling the vertical line to coincide with a rotary shaft of the rotary round table, uniformly paving fine sand on the upper surface of the circular jig, placing a diamond wafer on the fine sand in the center of the circular jig, pressing the diamond wafer to enable the upper surface of the diamond wafer to be horizontally placed, pouring liquid glue on the fine sand on the periphery of the diamond wafer, and curing the glue;
S32: the upper computer is used for controlling the non-contact high-precision displacement sensor 52 to irradiate the point-shaped measuring beam vertically downwards, the circular jig drives the diamond wafer to move to the position right below the non-contact high-precision displacement sensor 52, the spot measuring point of the non-contact high-precision displacement sensor 5b is positioned at the center of the diamond wafer, the non-contact high-precision displacement sensor 52 is used for obtaining the fluctuation displacement value of the spot measuring point, and meanwhile, the X-direction linear motor 31 or the Y-direction linear motor 32 drives the diamond wafer to move at the speed V f At a uniform speed, while rotating the table 34 to drive the diamond wafer at a constant rate of per minuteThe rotating speed of the Q ring rotates at a constant speed, so that a spiral line type scanning measurement track is formed on the surface of the diamond wafer by the light spot measurement point of the non-contact high-precision displacement sensor 52, and when the light spot measurement point of the non-contact high-precision displacement sensor 52 moves beyond the edge of the diamond wafer, the diamond wafer stops moving, and the non-contact high-precision displacement sensor 52 stops measuring displacement data;
s33: analyzing the displacement data collected by the non-contact high-precision displacement sensor 52, sequencing the collected displacement data points according to the sequence, and then constructing and generating corresponding two-dimensional coordinates (x i ,y i ) According to the sampling frequency f of the non-contact high-precision displacement sensor 52, the following calculation formula can be obtained:
wherein V is f Is in units of mm/s; q is a positive integer; f units Hz; i represents the serial number of the data point and is a positive integer;
using each displacement data point z i And its two-dimensional coordinates (x) i ,y i ) Constitutes a three-dimensional space point (x i ,y i ,z i ) Drawing three-dimensional space points corresponding to all the acquired displacement data points in a three-dimensional space coordinate system to form an initial three-dimensional measurement map of the surface type of the diamond wafer, and finding z in the initial three-dimensional measurement map of the surface type of the diamond wafer i And calculating the maximum displacement data point and the two-dimensional coordinates thereof, and simultaneously calculating the polar difference value of all the acquired displacement data points to be used as the planeness of the initial surface type of the diamond wafer.
S4: carrying out laser planarization processing on the diamond wafer, specifically:
s41: setting and starting a first laser light emitting module 4 according to the laser incident angle and the laser light emitting power parameters obtained in the step S2, adjusting the angle of the first laser head module 43, enabling the light emitting port of the first laser head module 43 to irradiate laser vertically downwards, controlling the horizontal movement platform module 3 to drive the diamond wafer to move to the position right below the light emitting port of the first laser head module 43, enabling the laser light spot output by the first laser light emitting module 4 to cover and ablate the whole surface of the diamond wafer, enabling the diamond surface to be carbonized and blackened, and further greatly reducing the light transmittance of the diamond wafer and finishing the modification treatment on the diamond wafer surface;
S42: according to the laser focal length F, the laser incident angle theta obtained in the step S2 and the z obtained in the step S3 i Maximum displacement data point z f And its two-dimensional coordinates (x) f ，y f ) The height coordinate of the upper surface of the circular jig is z 0 The coordinates of the irradiation position vertically downward of the light outlet of the first laser head assembly 43 are (x) 0 ，y 0 ) Calculating Z-direction height coordinate corresponding to the light outlet of the first laser head assembly 43 according to the trigonometric function relation to be Z 0 +z i +F.cos θ, the horizontal position coordinates of the diamond wafer were calculated as (x) 0 +x f +F·sinθ，y 0 +y f ) Adjusting the height coordinate of the first laser head assembly 43 and the horizontal position coordinate of the diamond wafer, focusing the laser beam emitted by the first laser head assembly 43 on the highest point position of the diamond wafer surface according to the set incident angle, and then adjusting the height of the first laser head assembly 43 upwards by 50-150 mu m;
s43: as shown in fig. 3, the linear motor 31 in the X direction of the horizontal movement platform module 3 is controlled to drive the diamond wafer to do linear reciprocating movement in the X direction within a certain range of the horizontal plane, one end of the stroke range is based on the fact that laser irradiates to the center of the diamond wafer, and the other end of the stroke range ensures that the laser irradiates to the outside of the diamond wafer, so that the laser irradiation range only covers a half area of the surface of the diamond wafer, which is far away from the first laser head assembly;
S44: the two-dimensional vibrating mirror of the first laser head assembly 43 is controlled to form a linear scanning track along the Y direction on the surface of the diamond wafer, the horizontal movement platform module 3 drives the diamond wafer to do uniform linear reciprocating movement along the X direction in the range set by the S43 in the horizontal plane, and after a reciprocating stroke is completed, the horizontal movement platform module 3 drives the diamond wafer to automatically rotate for a certain angle until the self-rotation angle of the diamond wafer is accumulated to 360 degrees as a cycle. Therefore, the laser irradiates the whole upper surface of the diamond wafer, the laser does not irradiate the side surface, and the difference of defocus of the laser in the high-point and low-point areas of the surface of the diamond wafer is enlarged by utilizing the trigonometric function principle during oblique irradiation, so that the planarization processing effect of more high-point removal and less low-point removal is achieved. After a certain period of processing, the highest protruding area on the surface of the diamond wafer is flattened, the intensity of laser ablation spark is weakened, then the height of the first laser head assembly is fed downwards by a displacement of 0.01-0.1 mm, so that the intensity of the laser ablation spark is recovered as before, the reciprocating motion and the self-rotating laser flattening processing process are repeated until the whole surface of the diamond wafer is basically processed to be flat, and the intensity of the laser ablation spark at different positions on the diamond wafer is basically consistent. Therefore, the advantage of large spot energy and strong heat accumulation effect of the first laser 8 is utilized to realize the efficient planarization processing of the whole surface of the diamond wafer.
For the diamond wafer with large surface height fluctuation and large flatness, a rapid processing step of fixed-point removal can be adopted. According to the three-dimensional measurement graph of the surface type of the diamond wafer detected in the step S3, on the basis of the reciprocating stroke range of the diamond wafer set in the step S43, the reciprocating stroke range is further shortened, so that the laser irradiation range only covers the highest protruding area on the surface of the diamond wafer, after the height of the protruding area is removed, the reciprocating stroke range is gradually increased, the secondary protruding area is irradiated until the reciprocating stroke range is restored to a state before shortening, namely, the laser irradiation range covers a half area of the surface of the diamond wafer far away from the first laser head assembly, and therefore fixed-point rapid machining of the high-point protruding area on the surface of the diamond wafer is realized.
S45: after step S44 is completed, detecting the surface of the processed diamond wafer according to the method of step S3, if the detected surface flatness value is within 30 mu m, turning the diamond wafer and placing the diamond wafer in the center of a round jig with fine sand paved on the surface removed, repeatedly executing step S32-S4 until the flatness of the current processing surface is smaller than that of the previous processing surface, stopping and turning again, repeating the steps, alternately processing two surfaces of the diamond wafer, so as to eliminate the deformation amount generated in the processing process of the diamond wafer until the surface type flatness of the two surfaces of the diamond wafer reaches the specified index, and completing the double-surface planarization processing of the diamond wafer.
S5: the method for carrying out laser polishing processing on the diamond wafer comprises the following steps:
s51: after the double-sided planarization processing of the diamond wafer is completed, starting the second laser 10 and the second laser head assembly 63 according to the method and parameter setting in the step S2, and adjusting the height of the second laser head assembly 63 and the reciprocating travel range of the diamond wafer according to the same method as the step S42 and the step S43;
s52: the two-dimensional vibrating mirror of the second laser head assembly 63 is controlled to form a linear scanning track along the Y direction on the surface of the diamond wafer, the horizontal movement platform module 3 drives the diamond wafer to do uniform linear reciprocating movement along the X direction in the range of travel set by the S51 in the horizontal plane, and the laser beam emitted by the second laser head assembly 63 only irradiates a half area of the surface of the diamond wafer far away from the second laser head assembly 63. After the diamond wafer completes a reciprocating movement stroke, the diamond wafer automatically rotates for a certain angle, and the laser irradiation process of the reciprocating movement is repeated until the self-rotation angle of the diamond wafer is accumulated to 360 degrees, so that the advantages of small light spots, fast pulse and high precision of the second laser 10 are utilized, the processing lines, small pits and the like left on the surface of the diamond wafer during planarization processing are removed, and the rough polishing effect of reducing the surface roughness of the diamond wafer is achieved.
S53: and (3) keeping the height of the second laser head assembly 63 unchanged, adjusting the laser incidence angle of the second laser head assembly 63 to increase by 1-5 degrees, repeating the step S51 to adjust the reciprocating movement range of the diamond wafer, repeating the step S52, continuously increasing the laser incidence angle after repeating, and repeating the step S51 to adjust the reciprocating movement range of the diamond wafer and the step S52 again until the laser slightly removes materials on the diamond surface, and stopping increasing the laser incidence angle. And then maintaining the current laser incidence angle, repeatedly executing the step S52 for a period of time again until the spot energy of the laser irradiated on the diamond surface is smaller than the removal energy threshold value of the diamond material, and finishing the finish polishing of the diamond wafer surface until the material is completely removed, thereby further reducing the surface roughness.
S54: and turning over the diamond wafer, and repeating the steps S51, S52 and S53, thereby finishing the double-sided polishing of the diamond wafer.
S6: and detecting the final processing result of the diamond wafer by using a detecting instrument.
After the processing is completed, the first laser 8 and the second laser 10 are turned off, the diamond wafer is taken down, items such as bending degree, warping degree, surface roughness, total thickness deviation, average thickness and the like of the processed diamond wafer are detected by using a white light interferometer, a three-dimensional profilometer, a thickness gauge and the like, whether the flattening processing and polishing processing results meet the index requirements or not is verified, the processing is finished when the index requirements are met, and the processing is returned to be finished again in a targeted mode when the index requirements are not met until the detection items reach the standards.
Other structures and principles are the same as those of embodiment 1.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (10)
1. The utility model provides a high-efficient precision machining equipment of laser of diamond wafer, a serial communication port, including base platform (1), longmen support frame (2) and host computer, longmen support frame (2) set up in base platform (1) upside, base platform (1) upside is provided with horizontal movement platform module (3), be provided with first laser play optical module (4) on longmen support frame (2), in-place measurement module (5), second laser play optical module (6), first light path reflection module (7), first laser (8), second light path reflection module (9) and second laser (10), first laser play optical module (4), in-place measurement module (5) and second laser play optical module (6) set up in longmen support frame (2) front side with "article" font on the horizontal plane, first laser play optical module (4), in-place measurement module (5) and second laser play optical module (6) set up in the top of horizontal movement platform module (3), first laser play optical module (4) and first laser reflection module (8) all are connected with first laser reflection module (7) and second laser reflection module (6), second laser play optical module (10) all are connected with first laser light path (4) and second laser reflection module (6) all The on-site measuring module (5), the second laser light emitting module (6), the first laser (8) and the second laser (10) are all connected with an upper computer, a metal shell is arranged outside the base platform (1) and the gantry supporting frame (2), and leveling feet are arranged at the bottom of the base platform (1).
2. The laser efficient precision machining device for the diamond wafer according to claim 1, wherein the horizontal motion platform module (3) comprises an X-direction linear motor (31), a Y-direction linear motor (32), a direct drive motor (33), a rotary round table (34) and a vacuum chuck (35) which are sequentially arranged from bottom to top, a round jig is movably arranged on the upper side of the vacuum chuck (35), the round jig is concentrically arranged with a rotating shaft of the rotary round table, the X-direction linear motor (31) is arranged at the top of the base platform (1), the Y-direction linear motor (32) is arranged on the sliding end of the X-direction linear motor (31), the direct drive motor (33) is arranged on the sliding end of the Y-direction linear motor (32), the rotary round table is arranged on the rotating shaft of the direct drive motor (33), the horizontal motion platform module (3) further comprises a vacuumizing device, and the X-direction linear motor (31), the Y-direction linear motor (32), the direct drive motor (33) and the direct drive motor (36) are connected with a rotary joint in the center of the vacuum chuck (35) through a ventilating hose.
3. The high-efficiency and precise laser processing device for diamond wafers according to claim 2, wherein the first laser light emitting module (4) comprises a first Z-direction linear motion sliding table assembly (41), a first hollow DD motor (42) and a first laser head assembly (43), the first Z-direction linear motion sliding table assembly (41) is vertically arranged, a fixed seat of the first Z-direction linear motion sliding table assembly (41) is connected with the front side of the gantry support frame (2) through a support, the first hollow DD motor (42) is connected with a motion sliding table of the first Z-direction linear motion sliding table assembly (41), a rotating shaft of the first hollow DD motor (42) is horizontally arranged, the first laser head assembly (43) comprises a shell I, a two-dimensional vibrating mirror I and a focusing lens I, the two-dimensional vibrating mirror I and the focusing lens I are arranged in the shell I, the shell I is connected with the rotating shaft of the first hollow DD motor (42), the two-dimensional vibrating mirror I corresponds to a first optical path reflection module (7), the focusing lens I and the center of the two-dimensional vibrating mirror I is vertical to the rotating shaft of the first hollow DD motor (42), and the first hollow DD motor (42) is connected with the first hollow vibrating mirror I through a cable wire assembly (41);
The first light path reflecting module (7) comprises a laser beam expander I and at least one 45-degree reflecting prism I, the light inlet of the laser beam expander I corresponds to the first laser (8), the light outlet of the laser beam expander I corresponds to the center of the 45-degree reflecting prism I, and the 45-degree reflecting prism I corresponds to the two-dimensional vibrating mirror I of the first laser head assembly (43);
the first laser (8) is connected with the upper computer through a cable, a laser beam emitted by the first laser (8) is expanded in diameter through a laser beam expander I, reflected by a 45-degree reflecting prism I, passes through a central hole of a first hollow DD motor (42), sequentially passes through a two-dimensional vibrating mirror I and a focusing lens I and is output, and the first laser (8) is an infrared nanosecond pulse laser; the second laser light emitting module (6) comprises a second Z-direction linear movement sliding table assembly (61), a second hollow DD motor (62) and a second laser head assembly (63), the second Z-direction linear movement sliding table assembly (61) is vertically arranged, a fixed seat of the second Z-direction linear movement sliding table assembly (61) is connected with the front side of the gantry supporting frame (2) through a bracket, the second hollow DD motor (62) is connected with a movement sliding table of the second Z-direction linear movement sliding table assembly (61), a rotating shaft of the second hollow DD motor (62) is horizontally arranged, the second laser head assembly (63) comprises a shell II, a two-dimensional vibrating mirror II and a focusing lens II, the two-dimensional vibrating mirror II and the focusing lens II are arranged in the shell II, the shell II is connected with the rotating shaft of the second hollow DD motor (62), the two-dimensional vibrating mirror II corresponds to the second optical path reflecting module (7), a light emitting port of the focusing lens II faces to the rotating shaft vertical to the second hollow DD motor (62), and the second Z-direction linear movement sliding table assembly (61), the second hollow DD motor (62) and the focusing lens II are connected with the two-dimensional vibrating mirror through a cable;
The second light path reflecting module (9) comprises a laser beam expander II and at least one 45-degree reflecting prism II, the light inlet of the laser beam expander II corresponds to the second laser (10), the light outlet of the laser beam expander II corresponds to the center of the 45-degree reflecting prism II, and the 45-degree reflecting prism II corresponds to the two-dimensional vibrating mirror II of the second laser head assembly (63);
the second laser (10) is connected with the upper computer through a cable, the diameter of a laser beam emitted by the second laser (10) is enlarged through a laser beam expander II, the laser beam is reflected by a 45-degree reflecting prism II, passes through a central hole of a second hollow DD motor (62), and then sequentially passes through a two-dimensional vibrating mirror II and a focusing lens II to be output, and the second laser (10) is an ultraviolet skin second pulse laser.
4. The laser efficient precision machining device for diamond wafers according to claim 3, wherein the on-site measurement module (5) comprises a third Z-direction linear movement sliding table assembly (51) and a non-contact high-precision displacement sensor (52), the third Z-direction linear movement sliding table assembly (51) and the non-contact high-precision displacement sensor (52) are both connected with an upper computer, a fixed seat of the third Z-direction linear movement sliding table assembly (51) is fixedly connected with the gantry supporting frame (2), a movement sliding table of the third Z-direction linear movement sliding table assembly (51) is connected with the non-contact high-precision displacement sensor (52), and a measuring beam outlet of the non-contact high-precision displacement sensor (52) is vertically arranged downwards.
5. A method of using the laser high efficiency precision machining apparatus for diamond wafer according to any one of claims 1 to 4, comprising the steps of:
s1: correcting the horizontal precision of the laser emergent track;
s2: setting processing parameters;
s3: detecting the initial surface type of the diamond wafer;
s4: carrying out laser planarization processing on the diamond wafer;
s5: performing laser polishing processing on the diamond wafer;
s6: and detecting the final processing result of the diamond wafer by using a detecting instrument.
6. The method for using the efficient and precise laser processing equipment for diamond wafers according to claim 5, wherein the specific method for correcting the horizontal precision of the laser light emitting track in step S1 is as follows:
s11: the test sample is adsorbed and fixed on a vacuum chuck of a horizontal motion platform module (3), and the test sample can be an aluminum sheet with the surface evenly painted;
s12: the first laser light emitting module (4) is controlled to sample a test sample wafer by laser at the center of a light emitting range, a laser track is a straight line with the length being more than or equal to the diameter of a diamond wafer to be processed, the straight line is perpendicular to the rotating surface of the first laser head assembly (43), then the first laser head assembly (43) is rotated, and the test sample wafer is subjected to laser sample making for one time under different laser incidence angles;
S13: measuring the line width deviation of all the proofing lines on the test sample by using a microscope, and if the line width deviation of the same proofing line at different positions is not more than 1.5%, setting the track of the linear structure under the current laser incidence angle without correction; if the line width deviation is greater than 1.5%, correcting, and pulling the line position corresponding to the line width smaller position of the proofing line to a direction far away from the center and upwards on the basis of the existing linear line structure until the line width deviation of different positions of the proofing line is not greater than 1.5%;
s14: and (3) repeating the steps S11-S13 by using the second laser light emitting module (6) to finish the correction of the second laser light emitting module (6) under different laser incidence angles.
7. The method for using the efficient and precise laser processing equipment for diamond wafers according to claim 6, wherein the specific method for setting the processing parameters in step S2 is as follows:
s21: placing a diamond wafer to be processed on a vacuum chuck of a horizontal motion platform module (3), setting the power of a first laser (8) and the power of a second laser (10) to be half of rated values, then respectively proofing one time when the surfaces of the diamond wafer to be processed are respectively in laser normal focus and laser Z-direction defocusing by 0.02mm by utilizing a first laser light emitting module (4) and a second laser light emitting module (6), detecting the ablation depth of proofing, and setting the corresponding laser incidence angle as a tentative laser incidence angle parameter when the difference of the two depths is the largest;
S22: under the tentative laser incidence angle parameters, respectively proofing the surface of the diamond wafer to be processed under different laser light-emitting power conditions, detecting the ablation depth and the edge morphology of the ablation area, and setting the corresponding laser light-emitting power of the laser as the tentative laser light-emitting power parameters when the ablation depth is maximum and the edge of the ablation area has no obvious cracks and other defects;
s23: under the tentative laser light-emitting power parameters, under the condition of different laser incidence angles, respectively proofing the surface of the diamond wafer to be processed once when the laser is in normal focus and the laser is out of focus in the Z direction by 0.02 mm; if the difference between the two depths is the largest under the condition of the tentative laser incidence angle parameter, the tentative laser incidence angle and the laser light-emitting power are considered as formal setting parameters; if the two depth differences are not the largest under the tentative laser incidence angle parameter condition, repeating the steps S22 and S23 under the incidence angle condition corresponding to the largest depth difference until the tentative laser incidence angle and the laser light emitting power condition are met and the two depth differences are the largest;
s24: setting laser single-point light emission under the set laser incidence angle and laser light emission power parameters, performing proofing test on the surface of the diamond wafer to be processed, measuring the length j and the width k of the etching pit, and then according to the central repetition frequency Q and the ideal light spot overlapping rate delta of pulse laser 1 And delta 2 Setting laser scanning rate V by light-emitting track length L s And feed rate V t The relation is:
V s ＝Q·k·δ 1
V t ＝V s ·j·δ 2 /L
wherein Vs is in mm/s, vt is in mm/s, j is in mm, k is in mm, Q is in Hz, L is in mm, delta 1 And delta 2 The percentage is generally about 95%.
8. The method for using the efficient and precise laser processing equipment for diamond wafers according to claim 7, wherein the specific method for detecting the initial surface shape of the diamond wafer in step S3 is as follows:
s31: the method comprises the steps of adsorbing and fixing a circular jig on the upper side of a vacuum chuck (35), enabling the circular jig, the vacuum chuck (35) and the circle center of a rotary round table to be arranged on the same vertical line, enabling the vertical line to coincide with a rotary shaft of the rotary round table, uniformly paving fine sand on the upper surface of the circular jig, placing a diamond wafer on the fine sand in the center of the circular jig, pressing the diamond wafer to enable the upper surface of the diamond wafer to be horizontally placed, pouring liquid glue on the fine sand on the periphery of the diamond wafer, and curing the glue;
s32: the upper computer is used for controlling the non-contact high-precision displacement sensor (52) to irradiate the point-shaped measuring beam vertically downwards, the circular jig drives the diamond wafer to move to the position right below the non-contact high-precision displacement sensor (52), the spot measuring point of the non-contact high-precision displacement sensor (52) is positioned at the center of the diamond wafer, the non-contact high-precision displacement sensor (52) is used for obtaining the fluctuation displacement value of the spot measuring point, and meanwhile, the X-direction linear motor (31) or the Y-direction linear motor (32) drives the diamond wafer to move at the speed V f The diamond wafer is driven to rotate at a constant speed by the rotary round table (34) at a constant speed of Q circles per minute, so that the light spot measuring points of the non-contact high-precision displacement sensor (52) form a spiral scanning measuring track on the surface of the diamond wafer, and when the non-contact high-precision displacement sensor (52) is used for scanningWhen the light spot measuring point moves beyond the edge of the diamond wafer, the diamond wafer stops moving, and the non-contact high-precision displacement sensor (52) stops measuring displacement data;
s33: analyzing the displacement data collected by the non-contact high-precision displacement sensor (52), sequencing the collected displacement data points according to the sequence, and then sequentially sequencing each data point z i Construction of the corresponding two-dimensional coordinates (x i ,y i ) According to the sampling frequency f of the non-contact high-precision displacement sensor (52), the calculation formula is as follows:
wherein V is f Is in units of mm/s; q is a positive integer, a unit circle; f units Hz; i represents the serial number of the data point and is a positive integer;
using each displacement data point z i And its two-dimensional coordinates (x) i ,y i ) Constitutes a three-dimensional space point (x i ,y i ,z i ) Drawing three-dimensional space points corresponding to all the acquired displacement data points in a three-dimensional space coordinate system to form an initial three-dimensional measurement map of the surface type of the diamond wafer, and finding z in the initial three-dimensional measurement map of the surface type of the diamond wafer i And calculating the maximum displacement data point and the two-dimensional coordinate thereof, and simultaneously calculating the polar difference value of all the acquired displacement data points, wherein the polar difference value is the planeness of the initial surface type of the diamond wafer.
9. The method for using the efficient and precise laser processing equipment for diamond wafers according to claim 8, wherein the specific method for performing laser planarization processing on diamond wafers in step S4 is as follows:
s41: setting and starting a first laser light emitting module (4) according to the laser incident angle and the laser light emitting power parameters obtained in the step S2, adjusting the angle of a first laser head assembly (43), enabling a light emitting opening of the first laser head assembly (43) to irradiate laser vertically downwards, controlling a horizontal movement platform module (3) to drive a diamond wafer to move to the position right below the light emitting opening of the first laser head assembly (43), enabling a laser spot output by the first laser light emitting module (4) to cover and ablate the whole surface of the diamond wafer, enabling the diamond surface to be carbonized and blackened, and finishing modification treatment on the diamond wafer surface;
s42: according to the laser focal length F, the laser incident angle theta obtained in the step S2 and the z obtained in the step S3 i Maximum displacement data point z f And its two-dimensional coordinates (x) f ，y f ) The height coordinate of the upper surface of the circular jig is z 0 The coordinate of the vertical downward irradiation position of the light outlet of the first laser head component (43) is (x) 0 ，y 0 ) Calculating Z-direction height coordinate corresponding to the light outlet of the first laser head assembly (43) as Z according to the trigonometric function relation 0 +z i +F.cos θ, the horizontal position coordinates of the diamond wafer were calculated as (x) 0 +x f +F·sinθ，y 0 +y f ) Adjusting the height coordinate of the first laser head assembly (43) and the horizontal position coordinate of the diamond wafer, focusing the laser beam emitted by the first laser head assembly (43) on the highest point position on the surface of the diamond wafer according to the set incident angle, and then adjusting the height of the first laser head assembly (43) upwards by 50-150 mu m;
s43: an X-direction linear motor (31) of the horizontal movement platform module (3) is controlled to drive the diamond wafer to do linear reciprocating movement along the X direction within a certain range of a horizontal plane, one end of a stroke range is based on the fact that laser is irradiated to the center of the diamond wafer, the other end of the stroke range ensures that the laser is irradiated to the outside of the diamond wafer, and the laser irradiation range only covers a half area of the surface of the diamond wafer, which is far away from the first laser head assembly;
s44: controlling a two-dimensional vibrating mirror of a first laser head assembly (43) to form a linear scanning track along a Y direction on the surface of a diamond wafer, driving the diamond wafer to do uniform linear reciprocating motion along an X direction in a range set by S43 by a horizontal motion platform module (3), after a reciprocating stroke is completed, driving the diamond wafer to self-rotate by a certain angle by the horizontal motion platform module (3) until the self-rotation angle of the diamond wafer is accumulated to 360 degrees, then feeding the displacement amount of 0.01-0.1 mm downwards by the height of the first laser head assembly (43), and repeating the reciprocating motion and self-rotation laser ablation processing process;
S45: after step S44 is completed, detecting the surface of the processed diamond wafer according to the method of step S3, if the detected surface flatness value is within 30 mu m, turning the diamond wafer and placing the diamond wafer in the center of a round jig with fine sand paved on the surface removed, repeatedly executing step S32-S4 until the flatness of the current processing surface is smaller than that of the previous processing surface, stopping and turning again, repeating the steps, alternately processing two surfaces of the diamond wafer, so as to eliminate the deformation amount generated in the processing process of the diamond wafer until the surface type flatness of the two surfaces of the diamond wafer reaches the specified index, and completing the double-surface planarization processing of the diamond wafer.
10. The method for using the efficient and precise laser processing equipment for diamond wafers according to claim 9, wherein the specific method for performing laser polishing processing on diamond wafers in step S5 is as follows:
s51: after the double-sided planarization processing of the diamond wafer is finished, starting the second laser (10) and the second laser head assembly (63) according to the method and parameter setting in the step S2, and adjusting the height of the second laser head assembly (63) and the reciprocating travel range of the diamond wafer according to the same method of the step S42 and the step S43;
S52: controlling a two-dimensional vibrating mirror of a second laser head assembly (63) to form a linear scanning track along the Y direction on the surface of a diamond wafer, driving the diamond wafer to do uniform linear reciprocating motion along the X direction in a horizontal plane within a travel range set in the step S51 by a horizontal motion platform module (3), irradiating only a half area, far away from the second laser head assembly (63), of the surface of the diamond wafer by a laser beam emitted by the second laser head assembly (63), and then automatically rotating for a certain angle after the diamond wafer completes a reciprocating motion travel, and repeating the laser irradiation process of the reciprocating motion until the self-rotation angle of the diamond wafer is accumulated to 360 degrees;
s53: keeping the height of the second laser head assembly (63) unchanged, adjusting the laser incident angle of the second laser head assembly (63) to increase by 1-5 degrees, repeating the step S51 to adjust the reciprocating movement range of the diamond wafer, repeating the step S52, continuously increasing the laser incident angle, and repeating the step S51 to adjust the reciprocating movement range of the diamond wafer and the step S52 again until the spot energy of laser irradiation on the diamond surface reaches 1.05-1.1 times of the diamond material removal energy threshold value, and stopping increasing the laser incident angle; then maintaining the current laser incident angle, repeatedly executing the step S52 again until the spot energy of the laser irradiated on the diamond surface is smaller than the removal energy threshold value of the diamond material, and finishing the finish polishing processing of the diamond wafer surface;
S54: and turning over the diamond wafer, and repeating the steps S51, S52 and S53, thereby finishing the double-sided polishing of the diamond wafer.
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