CN117561798A - 具有金属箔的载体箔、使用其的用于印刷线路板的层压板和该层压板的制造方法 - Google Patents
具有金属箔的载体箔、使用其的用于印刷线路板的层压板和该层压板的制造方法 Download PDFInfo
- Publication number
- CN117561798A CN117561798A CN202280045625.2A CN202280045625A CN117561798A CN 117561798 A CN117561798 A CN 117561798A CN 202280045625 A CN202280045625 A CN 202280045625A CN 117561798 A CN117561798 A CN 117561798A
- Authority
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- China
- Prior art keywords
- metal
- layer
- carrier foil
- foil
- release layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 146
- 239000002184 metal Substances 0.000 title claims abstract description 146
- 239000011888 foil Substances 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000007772 electroless plating Methods 0.000 claims abstract description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010936 titanium Substances 0.000 claims abstract description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims description 51
- 239000011347 resin Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 23
- 238000003825 pressing Methods 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 description 4
- 239000002738 chelating agent Substances 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003002 pH adjusting agent Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- LRFVTYWOQMYALW-UHFFFAOYSA-N 9H-xanthine Chemical compound O=C1NC(=O)NC2=C1NC=N2 LRFVTYWOQMYALW-UHFFFAOYSA-N 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- RHYBFKMFHLPQPH-UHFFFAOYSA-N N-methylhydantoin Chemical compound CN1CC(=O)NC1=O RHYBFKMFHLPQPH-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 2
- FDGQSTZJBFJUBT-UHFFFAOYSA-N hypoxanthine Chemical compound O=C1NC=NC2=C1NC=N2 FDGQSTZJBFJUBT-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 2
- 229940074439 potassium sodium tartrate Drugs 0.000 description 2
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RFTORHYUCZJHDO-UHFFFAOYSA-N 1,3-dimethylimidazolidine-2,4-dione Chemical compound CN1CC(=O)N(C)C1=O RFTORHYUCZJHDO-UHFFFAOYSA-N 0.000 description 1
- VSOSXKMEQPYESP-UHFFFAOYSA-N 1,6-naphthyridine Chemical compound C1=CN=CC2=CC=CN=C21 VSOSXKMEQPYESP-UHFFFAOYSA-N 0.000 description 1
- FLBAYUMRQUHISI-UHFFFAOYSA-N 1,8-naphthyridine Chemical compound N1=CC=CC2=CC=CN=C21 FLBAYUMRQUHISI-UHFFFAOYSA-N 0.000 description 1
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 1
- JFJNVIPVOCESGZ-UHFFFAOYSA-N 2,3-dipyridin-2-ylpyridine Chemical compound N1=CC=CC=C1C1=CC=CN=C1C1=CC=CC=N1 JFJNVIPVOCESGZ-UHFFFAOYSA-N 0.000 description 1
- HKEOCEQLCZEBMK-BQYQJAHWSA-N 2-[(e)-2-pyridin-2-ylethenyl]pyridine Chemical group C=1C=CC=NC=1/C=C/C1=CC=CC=N1 HKEOCEQLCZEBMK-BQYQJAHWSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- DONFLSQVXQLYAH-UHFFFAOYSA-N 2-pyridin-2-yl-1h-pyridin-2-amine Chemical compound C=1C=CC=NC=1C1(N)NC=CC=C1 DONFLSQVXQLYAH-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 229930024421 Adenine Natural products 0.000 description 1
- GFFGJBXGBJISGV-UHFFFAOYSA-N Adenine Chemical compound NC1=NC=NC2=C1N=CN2 GFFGJBXGBJISGV-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- UGQMRVRMYYASKQ-UHFFFAOYSA-N Hypoxanthine nucleoside Natural products OC1C(O)C(CO)OC1N1C(NC=NC2=O)=C2N=C1 UGQMRVRMYYASKQ-UHFFFAOYSA-N 0.000 description 1
- UXCWQGQTBWILMA-UHFFFAOYSA-N OC(CNCCNCCN)(C(O)(O)O)O Chemical compound OC(CNCCNCCN)(C(O)(O)O)O UXCWQGQTBWILMA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- JHIDGGPPGFZMES-UHFFFAOYSA-N acetic acid;n-(2-aminoethyl)hydroxylamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.NCCNO JHIDGGPPGFZMES-UHFFFAOYSA-N 0.000 description 1
- 229960000643 adenine Drugs 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- HJMZMZRCABDKKV-UHFFFAOYSA-N carbonocyanidic acid Chemical compound OC(=O)C#N HJMZMZRCABDKKV-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000016693 dipotassium tartrate Nutrition 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 1
- 229940091173 hydantoin Drugs 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229960000448 lactic acid Drugs 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229940116315 oxalic acid Drugs 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- AVTYONGGKAJVTE-OLXYHTOASA-L potassium L-tartrate Chemical compound [K+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O AVTYONGGKAJVTE-OLXYHTOASA-L 0.000 description 1
- 239000001472 potassium tartrate Substances 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- XWGJFPHUCFXLBL-UHFFFAOYSA-M rongalite Chemical compound [Na+].OCS([O-])=O XWGJFPHUCFXLBL-UHFFFAOYSA-M 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- FEJQDYXPAQVBCA-UHFFFAOYSA-J tetrasodium;ethane-1,2-diamine;tetraacetate Chemical compound [Na+].[Na+].[Na+].[Na+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCN FEJQDYXPAQVBCA-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229940075420 xanthine Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/1648—Porous product
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
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Abstract
本发明涉及一种附有载体箔的金属箔、使用附有载体箔的金属箔制造的用于印刷线路板的层压体以及用于印刷线路板的层压体的制造方法。所述附有载体箔的金属箔，其包括：载体箔；离型层，设置在该载体箔上，并且包括选自由钛、铜、镍和铝组成的组中的至少一种；和金属层，设置于该离型层上，且经无电镀形成。
Description
技术领域
本发明涉及一种附有载体箔的金属箔、使用附有载体箔的金属箔制造的用于印刷线路板的层压体以及用于印刷线路板的层压体的制造方法。
背景技术
随着各种电子元件的高度集成，需要具有高密度超精细线路图案的印刷线路板。印刷线路板可以通过在包括在印刷线路板中的金属箔上形成高密度超细线路图案来制造。
然而，当印刷线路板中包含的金属箔较厚时，由于形成线路图案时的蚀刻时间较长，且因此所形成的线路图案的侧壁的垂直度被破坏，可能存在导致连结中断的问题。据此，相对薄的金属箔主要用于制造具有高密度超精细线路图案的印刷线路板。
这里，由于薄金属箔的机械强度较弱，因此在印刷线路板的制造过程中可能容易起皱或弯曲，为了弥补这个问题，使用一种附有载体箔的金属箔，其中载体箔通过离型层附接到金属箔的一个表面上。具体而言，在将附有载体箔的金属箔与树脂基板贴合后，通过将与载体箔结合的离型层从附有载体箔的金属箔上剥离，形成印刷线路板的基本结构。
为了确保与载体箔结合的离型层的剥离性，大多数附有载体箔的金属箔被制造成即使在结合到树脂基板之前施加预定的力，结合载体箔的剥离层也可以从附有载体箔的金属箔剥离。
然而，在这样制造的情况下，有附着载体箔的金属箔不易处理和制造出有缺陷的印刷线路板的问题。换句话说，由于附有载体箔的金属箔在移动时需要小心以免发生剥离，使其不容易处理。另外，在将附有载体箔的金属箔与树脂基板结合的过程中，发生不期望的剥离，且因此损坏金属箔，且从而制造出有缺陷的印刷线路板。
因此，需要开发一种具有改善的剥离性的附有载体箔的金属箔，使得可以在期望的时间点进行剥离。
发明内容
本发明要解决的问题
本发明的目的在于提供一种可控制剥离性的带载体箔的金属箔，从而可在所希望的时间点进行剥离。
本发明的另一个目的是提供一个包括附有载体箔的金属箔结构的用于印刷线路板的层压体。
本发明的又另一个目的是提供一种用于印刷线路板的层压体的制造方法。
解决问题的方法
为了解决所述问题，本发明提供了一种附有载体箔的金属箔，包括：载体箔；离型层，设置在该载体箔上，并且包括选自由钛、铜、镍和铝组成的组中的至少一种；和金属层，设置于该离型层上并通过无电镀形成。
该离型层的厚度可以为1nm至100nm。
该金属层可以是多孔金属层。
该金属层的孔隙率可以为5％至40％。
根据本发明的另一方面，提供了一种用于印刷线路板的层压体，包括：载体箔；离型层，设置在该载体箔上，并且包括选自由钛、铜、镍和铝组成的组中的至少一种；金属层，设置于该离型层上，且经无电镀形成；和树脂层，设置在该金属层上。
用于印刷线路板的层压体还可以包括：氧化物离型层，设置在该离型层和该金属层之间。
根据本发明的又另一个方面，提供了一种用于印刷线路板的层压板的制造方法，包括以下步骤：准备载体箔；在该载体箔上形成离型层，该离型层包含选自由钛、铜、镍和铝组成的组中的至少一种通过无电镀在该离型层上形成金属层；和通过在该金属层上层压树脂基板来形成树脂层。
根据本发明的用于印刷线路板的层压体的制造方法还可以包括：通过在10MPa至40MPa和180℃至220℃下压制以在该离型层和该金属层之间形成氧化物离型层的步骤。
本发明的效果
在本发明的附有载体箔的金属箔中，贴合载体箔的离型层不是在与树脂基材贴合前从带载体箔的金属箔上剥离，而是在与树脂基材贴合后剥离，通过将与载体箔结合的离型层从附有载体箔的金属箔剥离，从而容易地处理附有载体箔的金属箔并最大限度地减少有缺陷的印刷线路板的制造。。
附图说明
图1是显示根据本发明实施例的附有载体箔的金属箔的示意图。
图2是示出根据本发明实施例的用于印刷线路板的层压体的示意图。
图3是示出根据本发明另一实施例的用于印刷线路板的层压体的示意图。
具体实施方式
本发明的说明书和权利要求书中使用的术语和词语不应被解释为限于普通或字典含义，而应基于以下原则以与本发明的技术思想一致的含义和概念来解释：发明人可以正确定义术语的概念，以尽可能最好的方式描述他/她自己的发明。
本发明涉及一种具有受控的剥离性从而可以在期望的时间点进行剥离的附有载体箔的金属箔、包括该附有载体箔的金属箔结构的用于印刷线路板的层压体及其制造方法。具体来说，在根据本发明的附有载体箔的金属箔中，在与树脂基材贴合之前不发生剥离，而是在与树脂基材贴合之后发生剥离，这将参考图1描述如下。
本发明的附有载体箔的金属箔包括载体箔10、离型层20和金属层30。
本发明的附有载体箔的金属箔中所括的载体箔10可以用作支撑层，以防止金属层30在移动或使用附有载体箔的金属箔的过程中变形。这种载体箔10可以由诸如铜或铝的金属制成；或者可以由聚合物，例如：聚对苯二甲酸乙二醇酯(PET)、聚苯硫醚(PPS)或聚四氟乙烯制成。
所述载体箔10的厚度可以是10μm至50μm，具体地15μm至40μm。如果该载体箔10的厚度在上述范围内，则可以防止附有载体箔的金属箔变得比需要的更厚，同时顺利地用作支撑层。
根据本发明的附有载体箔的金属箔中所包括的离型层20设置在载体箔10上，并且可以用作允许剥离载体箔10的离型层。离型层20可以包括选自由钛(Ti)、铜、镍和铝组成的组中的一种或多种金属。如果离型层20包括上述一种或多种金属，则与金属层30形成牢固的结合，使得在附有载体箔的金属箔本身不会发生离型层20与金属层30之间的剥离，但在进行在高温高压下与树脂基板结合的制程以制造用于印刷线路板的层压体之后，可以发生离型层20和金属层30之间的剥离。具体地，离型层20可以由钛制成。如果离型层20由钛制成，则可以在更期望的时间点将离型层20从附着有载体箔的金属箔剥离。
所述离型层20的厚度可以为1nm至100nm，具体地30nm至80nm。如果该离型层20具有在上述范围内的厚度，则离型层20可以表现出与金属层30所需的结合力，并且可以在期望的时间点剥离。
根据本发明的附有载体箔的金属箔中包括的金属层30设置在离型层20上，并且可以通过在印刷线路板的制造过程中形成线路图案的过程而用作电路层。金属层30可以由选自由铜和镍组成的组中的至少一种制成。
如果所述金属层30是经由无电镀形成，则其可能因此而具有孔隙率。也就是说，根据本发明的金属层30是通过无电镀而不是电解镀形成的，因此其可以是多孔金属层。如果金属层30是多孔金属层，为了制造用于印刷线路板的层压板，在高温和高压下进行与树脂基板的结合过程之后，离型层20和金属层30之间可能会发生剥离，下文将详细描述。
这里，如果金属层30是多孔金属层，则其孔隙率可以为5％至40％，具体地，10％至30％。孔隙率可以指金属层30的总体积中孔隙所占据的体积比。如果金属层30具有上述范围内的孔隙率，则可以控制离型层20在期望的时间点剥离，也可以顺利地作为此后的电路层。
另外，考虑到剥离性以及电路层的作用，金属层30的厚度可以为0.5μm至5μm，具体地，1μm至3μm。
同时，如图1所示，可以在金属层30的表面上形成多个圆锥形或多棱锥形突起。该突起可以通过无电镀在形成金属层30的过程中金属晶体的生长来形成。由于此突起，金属层30可以有0.05μm至0.4μm、具体地0.1μm至0.3μm的表面粗糙度(Ra)。这样，如果在金属层30上形成多个圆锥形或多棱锥形突起，则金属层30可以在用于印刷线路板的层压体的制造过程中表现出与树脂基板的高结合强度。
在根据本发明的附有载体箔的金属箔中，包括选自由钛、铜、镍和铝组成的组中的至少一种金属的离型层20表现出与金属层30的高结合强度，使得即使施加预定的力，通过离型层20的载体箔10在附有载体箔的金属箔本身中也不会剥离，从而容易地处理附有载体箔的金属箔。
另外，当根据本发明的附有载体箔的金属箔在用于印刷线路板的层压体的制造过程中在高温和高压下通过无电镀形成的金属层30与树脂基板层压时，氧化物离型层20形成在离型层20与金属层30之间，使得载体箔10可以很好地剥离，这将在下文描述的用于印刷线路板的层压体的描述中更详细地描述。
本发明提供一种印刷线路板用层压体，其包括上述的附有载体箔的金属箔结构。具体地，请参见图2，根据本发明的用于印刷线路板的层压体包括载体箔10、离型层20、金属层30和树脂层40。
根据本发明的用于印刷线路板的层压体中包括的载体箔10、离型层20和金属层30的描述与附有载体箔的金属箔中的描述相同，因此详细描述其将被省略。即，根据本发明的用于印刷线路板的层压体可以是其中树脂层40设置在包括载体箔10、离型层20和金属层30的附有载体箔的金属箔上的层压体。
根据本发明的用于印刷线路板的层压体中包括的树脂层40设置在上述金属层30上，并且可以用作绝缘层。树脂层可以由具有用树脂浸渍无机或有机纤维的结构的树脂基材(例如：预浸料坯(prepreg))形成。所述树脂可选自由萘基环氧树脂、双酚A型环氧树脂、苯酚酚醛清漆环氧树脂、甲酚酚醛清漆环氧树脂、橡胶改质环氧树脂、磷基环氧树脂、双酚F型环氧树脂和聚酰亚胺树脂组成的组中的至少一种。
根据本发明的用于印刷线路板的层压体还可以包括设置在离型层20和金属层30之间的氧化物离型层50。氧化物离型层50是通过氧化离型层20的一部分(具体地，离型层20与金属层30接触的表面)而形成，通过此氧化物离型层50，载体箔10可以顺利剥离(即，与载体箔10和离型层20结合的氧化物离型层50的剥离)，同时防止离型层20的成分残留在金属层30中。
所述氧化物离型层50可以由选自由氧化钛、氧化铜、氧化镍和氧化铝组成的组中的至少一种金属氧化物制成。
这样的氧化物离型层50可以通过在与树脂基板结合而形成树脂层40的过程中自然形成，而不是在用于印刷线路板的层压板的制造过程中经过另外形成氧化物离型层50的过程。也就是说，根据本发明，在制造用于印刷线路板的层压板时，即使不经过人工氧化的过程，也可以自然地形成氧化物离型层50，这将在下面的用于印刷线路板层压板的制造方法中详细描述。
本发明提供上述印刷线路板用层压体的制造方法。具体地，印刷线路板用层压板的制造方法包括以下步骤：制备载体箔；在该载体箔上形成离型层，该离型层包含选自由钛、铜、镍和铝组成的组中的至少一种；通过无电镀在该离型层上形成金属层；在该金属层上层压树脂基板来形成树脂层。
所述制备载体箔的步骤可以通过制备由铜或铝制成的金属薄膜来进行；或通过为由聚对苯二甲酸乙二酯(PET)、聚苯硫醚(PPS)或聚四氟乙烯制成的聚合物薄膜来进行。
所述形成离型层的步骤可以通过在制备的载体箔上形成包括选自由钛、铜、镍和铝组成的组中的至少一种的离型层来进行。作为离型层的形成方法，可以举出溅镀法等。
所述形成金属层的步骤可以在离型层上通过无电镀进行。对于无电镀，可以使用包括金属离子源和含氮化合物的无电镀溶液。
所述金属离子源具体可以为选自由硫酸铜、氯化铜、硝酸铜、氢氧化铜和氨基磺酸铜组成的组中的至少一种。金属离子源的浓度可以为0.5g/L至300g/L，具体地100g/L至200g/L。
所述含氮化合物扩散金属离子，以在由金属离子源形成的金属种子层的表面上形成多个突起。所述含氮化合物具体可为选自嘌呤、腺嘌呤、鸟嘌呤、次黄嘌呤、黄嘌呤、哒嗪、甲基哌啶、1,2-二-(2-吡啶基)亚乙基、1,2-二-(2-吡啶基)亚乙基、2,2'-联吡啶胺、2,2'-联吡啶、2,2'-联嘧啶、6,6'-二甲基-2,2'-联吡啶、二-2-吡啶酮、N,N,N',N'-四乙二胺、1,8-萘啶、1,6-萘啶和三联吡啶组成的组中的至少一种。含氮化合物的浓度可以为0.01至10g/L，具体地0.05g/L至1g/L。
所述无电镀液还可以包含选自由螯合剂、pH调节剂和还原剂组成的组中的至少一种添加剂。
所述螯合剂具体可为选自由酒石酸、柠檬酸、醋酸、苹果酸、丙二酸、抗坏血酸、草酸、乳酸、琥珀酸、酒石酸钾钠、酒石酸二钾、乙内酰脲、1-甲基乙内酰脲、1,3-二甲基乙内酰脲、5,5-二甲基乙内酰脲、次氮基乙酸、三乙醇胺、乙二胺四乙酸、乙二胺四乙酸四钠、N-羟基乙二胺三乙酸盐和五羟丙基二亚乙基三胺组成的组中的至少一种。螯合剂的浓度可以为0.5g/L至600g/L，具体地300g/L至450g/L。
所述pH调节剂具体可以为选自由氢氧化钠、氢氧化钾和氢氧化锂组成的组中的至少一种。pH调节剂可以包含在无电镀溶液中，使得无电镀溶液的pH被调节至8以上，具体地10至14，并且更具体地11至13.5。
所述还原剂具体可以为选自由甲醛、次磷酸钠、羟基甲烷亚磺酸钠、乙醛酸、硼氢化物和二甲胺硼烷组成的组中的至少一种。还原剂的浓度可以为1g/L至20g/L，具体地5g/L至20g/L。
可以根据金属层的厚度适当地调整用于通过使用所述无电镀溶液的无电镀形成金属层的镀覆条件。具体地，无电镀温度可以为20℃至60℃，具体为30℃至40℃，并且无电镀时间可以为2分钟至30分钟，具体为5分钟至20分钟。
本发明可以使用这样的无电镀液进行无电镀来形成金属层，从而形成多孔金属层。
所述形成树脂层的步骤可以包括将树脂基板层压在所述形成的金属层上。作为树脂基材，可以使用具有用树脂浸渍上述无机或有机纤维的结构的树脂基材。
同时，根据本发明的用于印刷线路板的层压体的制造方法还可以包括在离型层和金属层之间形成氧化物离型层的步骤。具体地，可以通过在高温和高压条件下压制其中层压有载体箔、离型层、金属层和树脂层的层压体来在离型层和金属层之间形成氧化物离型层。
即，将所述树脂基板层压在所述金属层上，然后为了结合树脂层和金属层，层压的树脂基板经过高温高压条件下的压制过程，但在本发明中，在所述压制过程中离型层和金属层之间可以自然形成氧化物离型层。本发明中，金属层具有孔隙，使得氧气在高温高压压制过程经由金属层的孔隙移动至离型层，进而氧化离型层。
所述高温高压压制可以用10MPa至40MPa(具体地15MPa至30MPa)在180℃至220℃(具体地190℃至210℃)下进行。
因此，本发明的特征在于，在将树脂基材层压在附有载体箔的金属箔结构上的过程中，通过多孔金属层自然形成氧化物离型层，而不是通过在印刷线路板用层压板的制造过程中经过人为氧化附有载体箔的金属箔本身或结合树脂基板的层压板的过程，并且因此，本发明的附有载体箔的金属箔本身中不存在载体箔剥离的情况，但在通过氧化物离型层与树脂基板贴合的印刷线路板用层压板中，载体箔可被剥离。因此，本发明可以通过最小化缺陷发生率来提供具有优异可靠性的用于印刷线路板的层压体。
本发明提供一种使用上述印刷线路板用层压体制造的印刷线路板。具体地，本发明的印刷电路板包括金属线路层和树脂层，金属线路层源自上述的金属层，如下所述。
根据本发明的印刷电路板中所包含的金属电路层是其上形成电路线路的层。这种金属电路层是通过上述在金属层上形成电路线路的制程而获得的。形成电路线路的方法没有特别限制，可以是减成法、加成法、全加成法、半加成法或改良的半加成法。
本发明的印刷电路板中所包含的树脂层是设置在金属电路层上的绝缘层。这种树脂层可以由公知的树脂基板制成。具体地，树脂层可以由具有公知的树脂浸渍无机或有机纤维的结构的树脂基材(例如，预浸料坯(prepreg))形成。
根据本发明的印刷电路板可以使用树脂基板来制造，或者可以通过不包括树脂基板的无芯方法来制造。
下面，将参考实施例更详细地描述本发明。然而，以下实施例旨在说明本发明，并且对于本领域技术人员来说显而易见的是，在本发明的范围和精神内可以进行各种变化和修改，并且本发明的范围是不限于此。
[实施例1]
将由18μm厚的铜箔制成的载体箔浸入硫酸中进行酸洗，然后用纯水清洗。接下来，通过在载体箔上溅镀钛来形成厚度为50nm的离型层。然后，使用含有190g/L～200g/L的金属离子源(CuSO4·5H2O)、0.01g/L～0.1g/L的含氮化合物(鸟嘌呤)、405g/L～420g/L的螯合剂(酒石酸钾钠)、pH调节剂(NaOH)、还原剂(28％甲醛)的无电镀液，在34℃下无电镀20分钟，形成厚度2μm的金属层(孔隙率：20％)。
[比较例1]
将由18μm厚的铜箔制成的载体箔浸入硫酸中进行酸洗，然后用纯水清洗。接下来，通过在载体箔上溅镀钛来形成厚度为50nm的离型层。然后，使用由200g/L的硫酸铜、100g/L的硫酸、50ppm的氯离子和10ml/L的载体、0.3ml/L的光亮剂组成的镀液，施加1ASD的电流密度，在25℃下电解10分钟，形成厚度为2μm的金属层。
[实验例1]
根据IPC-TM-650标准(使用10mm的宽度×10cm的长度的板状试验片)测定实施例1和比较例1中制作的附有载体箔的金属箔的剥离强度(gf/cm)，且结果如下表1所示。
[表1]
| 剥离强度 | |
| 实施例1 | 无法测量(没有剥离) |
| 比较例1 | 50gf/cm |
参考上述表1，可以确认，在根据本发明的实施例1的附有载体箔的金属箔中，没有发生剥离，而在比较例1的附有载体箔的金属箔中发生了剥离。
[制备例1及比较制备例1]
将树脂基板(Doosan Electronics预浸料坯(DS-7409HG))层压在实施例1和比较例1中制备的附有载体箔的金属箔上，然后在210℃下以30MPa的压力压制100分钟以分别制备用于印刷线路板的层压板。
[实验例2]
根据IPC-TM-650标准(使用10mm的宽度×10cm的长度的板状试验片)测量制备例1和2以及比较制备例1中制备的用于印刷线路板的层压体的剥离强度(gf/cm)，且结果如下表2所示。
[表2]
| 剥离强度 | |
| 制备例1(实施例1) | 8gf/cm |
| 比较制备例1(比较例1) | 45gf/cm |
参考上述表2，可以确认根据本发明的实施例1的附有载体箔的金属箔在与树脂基材结合之后显示出所需水平(5gf/cm至10gf/cm)的剥离强度。这可以看出支持以下事实：在与树脂基板的结合过程中，在离型层和金属层之间形成氧化物离型层以能够剥离。
Claims (9)
1.一种附有载体箔的金属箔，其包括：
载体箔；
离型层，设置在所述载体箔上，并且包括选自由钛、铜、镍和铝组成的组中的至少一种；和
金属层，设置于所述离型层上，且经无电镀形成。
2.根据权利要求1所述的附有载体箔的金属箔，其中，所述离型层的厚度为1nm至100nm。
3.根据权利要求1所述的附有载体箔的金属箔，其中，所述金属层是多孔金属层。
4.根据权利要求3所述的附有载体箔的金属箔，其中，所述金属层的孔隙率为5％至40％。
5.一种用于印刷线路板的层压体，包括：
载体箔；
离型层，设置在所述载体箔上，并且包括选自由钛、铜、镍和铝组成的组中的至少一种；
金属层，设置于所述离型层上，且经无电镀形成；和
树脂层，设置在所述金属层上。
6.根据权利要求5所述的用于印刷线路板的层压体，其中，所述用于印刷线路板的层压体还包括：氧化物离型层，所述氧化物离型层设置在所述离型层和所述金属层之间。
7.一种印刷线路板用层压体的制造方法，包括：
制备载体箔；
在所述载体箔上形成离型层，所述离型层包括选自由钛、铜、镍和铝组成的组中的至少一种；
通过无电镀在所述离型层上形成金属层；和
通过在所述金属层上层压树脂基板来形成树脂层。
8.根据权利要求7所述的用于印刷线路板的层压体的制造方法，其中，还包括：通过在10MPa至40MPa和180℃至220℃下压制以在所述离型层和所述金属层之间形成氧化物离型层的步骤。
9.一种印刷电路板，其包括：金属电路层，其中，电路线路形成在根据权利要求5和6中任一项所述的用于印刷线路板的层压体的金属层上。
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| JP6640567B2 (ja) * | 2015-01-16 | 2020-02-05 | Ｊｘ金属株式会社 | キャリア付銅箔、積層体、プリント配線板、電子機器の製造方法及びプリント配線板の製造方法 |
| KR20160093555A (ko) * | 2015-01-29 | 2016-08-08 | 제이엑스금속주식회사 | 표면 처리 동박, 캐리어가 부착된 동박, 기재, 수지 기재, 적층체, 프린트 배선판, 전자 기기 및 프린트 배선판의 제조 방법 |
| KR102412000B1 (ko) * | 2015-05-12 | 2022-06-22 | 삼성전기주식회사 | 동박적층판 및 이를 이용한 인쇄회로기판의 제조방법 |
-
2021
- 2021-07-02 KR KR1020210086969A patent/KR102429384B1/ko active IP Right Grant
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2022
- 2022-06-24 JP JP2023580927A patent/JP2024526624A/ja active Pending
- 2022-06-24 US US18/290,528 patent/US20240260200A1/en active Pending
- 2022-06-24 WO PCT/KR2022/009044 patent/WO2023277462A1/ko active Application Filing
- 2022-06-24 CN CN202280045625.2A patent/CN117561798A/zh active Pending
- 2022-06-24 EP EP22833518.8A patent/EP4329437A1/en active Pending
- 2022-06-30 TW TW111124446A patent/TW202311562A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20240260200A1 (en) | 2024-08-01 |
| KR102429384B1 (ko) | 2022-08-04 |
| EP4329437A1 (en) | 2024-02-28 |
| WO2023277462A1 (ko) | 2023-01-05 |
| JP2024526624A (ja) | 2024-07-19 |
| TW202311562A (zh) | 2023-03-16 |
| KR102429384B9 (ko) | 2023-04-12 |
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