CN117506049A - 焊料回流设备和制造电子器件的方法 - Google Patents
焊料回流设备和制造电子器件的方法 Download PDFInfo
- Publication number
- CN117506049A CN117506049A CN202310743208.1A CN202310743208A CN117506049A CN 117506049 A CN117506049 A CN 117506049A CN 202310743208 A CN202310743208 A CN 202310743208A CN 117506049 A CN117506049 A CN 117506049A
- Authority
- CN
- China
- Prior art keywords
- substrate
- vapor
- solder reflow
- reflow apparatus
- generation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 178
- 239000013529 heat transfer fluid Substances 0.000 claims abstract description 39
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000012546 transfer Methods 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 14
- 238000003825 pressing Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 14
- 238000003466 welding Methods 0.000 description 10
- 239000012808 vapor phase Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- 238000009835 boiling Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010702 perfluoropolyether Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/012—Soldering with the use of hot gas
- B23K1/015—Vapour-condensation soldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/04—Heating appliances
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/04—Heating appliances
- B23K3/047—Heating appliances electric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
- B23K3/087—Soldering or brazing jigs, fixtures or clamping means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
- H01L2224/75101—Chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75272—Oven
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
- H01L2224/75801—Lower part of the bonding apparatus, e.g. XY table
- H01L2224/75804—Translational mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
- H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
- H01L2224/75824—Translational mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/75981—Apparatus chuck
- H01L2224/75982—Shape
- H01L2224/75984—Shape of other portions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/81024—Applying flux to the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81091—Under pressure
- H01L2224/81092—Atmospheric pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81095—Temperature settings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8121—Applying energy for connecting using a reflow oven
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8121—Applying energy for connecting using a reflow oven
- H01L2224/81211—Applying energy for connecting using a reflow oven with a graded temperature profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81395—Bonding interfaces outside the semiconductor or solid-state body having an external coating, e.g. protective bond-through coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81908—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95053—Bonding environment
- H01L2224/95091—Under pressure
- H01L2224/95092—Atmospheric pressure, e.g. dry self-assembly
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20105—Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20106—Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
提供了一种焊料回流设备和制造电子器件的方法。所述焊料回流设备包括:蒸气发生室,所述蒸气发生室被配置为容纳传热流体并且容纳通过加热所述传热流体而产生的饱和蒸气;加热器,所述加热器被配置为对容纳在所述蒸气发生室中的所述传热流体进行加热;基板台,所述基板台被配置为能够在所述蒸气发生室内上下移动,所述基板台包括:安置表面;第一蒸气通道,所述第一蒸气通道贯穿所述基板台并且被配置为使得所述蒸气能够移动穿过所述第一蒸气通道;以及抽吸通道,所述抽吸通道贯穿所述基板台以通向所述安置表面,并且至少一部分真空被产生在所述抽吸通道中。
Description
相关申请的交叉引用
本申请要求于2022年8月3日在韩国知识产权产权局提交的韩国专利申请No.10-2022-0096842的优先权,其内容通过引用整体并入本文。
技术领域
本公开的一个或多个示例实施例涉及焊料回流设备和使用该焊料回流设备制造电子器件的方法,并且更具体地,涉及使用气相焊接法的焊料回流设备和使用该焊料回流设备制造半导体封装件的方法。
背景技术
在表面安装技术(SMT)领域中,可以使用对流回流法、激光辅助接合法、气相焊接法等来焊接焊膏。在气相焊接法的情况下,在烘箱内的蒸气饱和期间可以在包括且不限于印刷电路板(PCB)的基板的整个部分提供更均匀的温度分布,并且由于传热流体的沸点是预先确定的,因此具有通过将目标温度设高来防止过热的优势。
然而,当根据气相焊接法执行焊料回流工艺时,由于焊料之间的节距微小化,所以为了防止接合缺陷而在牢固地固定基板的同时在整个区域更均匀地传热变得越来越难。
发明内容
一个或更多个示例实施例提供了一种焊料回流设备,该焊料回流设备能够通过在牢固地支撑基板的同时在整个基板更均匀地传递热量来有效地执行焊料回流工艺。
此外,一个或更多个示例实施例提供了一种使用上述焊料回流设备制造电子器件的方法。
根据示例实施例的方面,一种焊料回流设备包括:蒸气发生室,所述蒸气发生室被配置为容纳传热流体并且容纳通过加热所述传热流体而产生的饱和蒸气;加热器,所述加热器被配置为对容纳在所述蒸气发生室中的所述传热流体进行加热;基板台,所述基板台被配置为能够在所述蒸气发生室内上下移动,所述基板台包括安置表面;蒸气通道,所述蒸气通道贯穿所述基板台,并且被配置为使得所述蒸气能够移动穿过所述蒸气通道;以及抽吸通道,所述抽吸通道贯穿所述基板台以通向所述安置表面,并且至少一部分真空被产生在所述抽吸通道中。
根据示例实施例的方面,一种焊料回流设备包括:蒸气发生室,所述蒸气发生室被配置为容纳传热流体;加热器,所述加热器被配置为加热所述传热流体,以从所述传热流体产生饱和蒸气;基板台,所述基板台被配置为能够在所述蒸气发生室内上下移动,所述基板台包括被配置为支撑基板的安置表面,电子部件经由焊料安装在所述基板上;蒸气通道,所述蒸气通道贯穿所述基板台;以及抽吸支持机构,所述抽吸支持机构包括抽吸通道和真空泵,所述抽吸通道贯穿所述基板台以通向所述安置表面,所述真空泵被配置为在所述抽吸通道中产生至少一部分真空。
根据示例实施例的方面,一种焊料回流设备包括:蒸气发生室,所述蒸气发生室被配置为容纳传热流体并且容纳通过加热所述传热流体而产生的饱和蒸气;加热器,所述加热器被配置为对容纳在所述蒸气发生室中的所述传热流体进行加热;基板台,所述基板台被配置为能够在所述蒸气发生室内上下移动,所述基板台包括安置表面、蒸气通道和抽吸通道,所述蒸气通道贯穿所述基板台并被配置为使得所述蒸气能够移动穿过所述蒸气通道,所述抽吸通道在所述基板台中延伸以通向所述安置表面;以及固定夹具,所述固定夹具被支撑在所述基板台的所述安置表面上并且被配置为支撑基板,电子部件经由焊料安装在所述基板上。
附图说明
通过以下结合附图对示例实施例的详细描述,将更清楚地理解上述和/或其他方面,在所述附图中:
图1是示出根据示例实施例的焊料回流设备的截面图;
图2是示出根据示例实施例的基板台被升高的图1的焊料回流设备的截面图;
图3是示出根据示例实施例的图1的焊料回流设备的侧视图;
图4是示出根据示例实施例的图1的焊料回流设备的基板台的立体图;
图5是示出根据示例实施例的支撑在图4的基板台上的制品的立体图;
图6是根据示例实施例的沿图5中的A-A’线截取的截面图;
图7是根据示例实施例的沿图5中的B-B’线截取的截面图;
图8是示出根据示例实施例的支撑在图4的基板台上的制品的立体图;
图9是示出根据示例实施例的支撑在图8的基板台上的制品的俯视图;
图10是根据示例实施例的沿图9中的C-C’线截取的截面图;
图11是根据示例实施例的沿图9中的D-D’线截取的截面图;
图12是示出根据示例实施例的焊料回流设备的截面图;
图13是示出根据示例实施例的装载到图12的焊料回流设备中的固定夹具的下夹具的俯视图;
图14是根据示例实施例的沿图13中的E-E’线截取的截面图;
图15是示出根据示例实施例的图12中的固定夹具的上夹具的俯视图;
图16是根据示例实施例的沿图15中的F-F’线截取的截面图;
图17是示出根据示例实施例的支撑在图12的焊料回流设备的基板台上的固定夹具的俯视图;
图18是根据示例实施例的沿图17中的G-G’线截取的截面图;
图19是根据示例实施例的沿图17中的H-H’线截取的截面图;
图20是示出根据示例实施例的制造电子器件的方法的流程图;以及
图21、图22、图23、图24、图25、图26和图27是示出根据示例实施例的制造电子器件的方法的图。
具体实施方式
在下文中,将参考附图详细描述示例实施例。
图1是示出根据示例实施例的焊料回流设备的截面图。图2是示出根据示例实施例的基板台被升高的图1的焊料回流设备的截面图。图3是示出根据示例实施例的图1的焊料回流设备的侧视图。图4是示出根据示例实施例的图1的焊料回流设备的基板台的立体图。图5是示出根据示例实施例的支撑在图4的基板台上的制品的立体图。图6是根据示例实施例的沿图5中的A-A’线截取的截面图。图7是根据示例实施例的沿图5中的B-B’线截取的截面图。图8是示出根据示例实施例的支撑在图4的基板台上的制品的立体图。图9是示出根据示例实施例的支撑在图8的基板台上的制品的俯视图。图10是根据示例实施例的沿图9中的C-C’线截取的截面图。图11是根据示例实施例的沿图9中的D-D’线截取的截面图。
参考图1、图2、图3、图4、图5、图6、图7、图8、图9、图10和图11,根据示例实施例,焊料回流设备10可以包括蒸气发生室100、加热器110和基板台200。此外,焊料回流设备10还可以包括形成在基板台200中的多个蒸气通道孔202和多个抽吸孔(suction hole)204。另外,焊料回流设备10可以进一步包括抽吸支持机构300,该抽吸支持机构300包括真空泵308,该真空泵308被配置为在抽吸孔204中形成至少一部分真空。另外,焊料回流设备10可以进一步包括:升降驱动器,该升降驱动器被配置为升高和降低基板台200;以及温度感测部,该温度感测部被配置为监测蒸气发生室100中的温度。
在示例实施例中,焊料回流设备10可以是气相焊接设备,该气相焊接设备被配置为使用在蒸气发生室100中加热的饱和蒸气来焊接焊膏。
蒸气发生室100可以包括具有烘箱形状的下部贮存器,以容纳传热流体F并提供被蒸气填充的空间101,该蒸气是当传热流体F沸腾时在传热流体F正上方生成的。蒸气发生室100可以在竖直方向(Z方向)上延伸预定高度。在蒸气发生室100中,传热流体F可以沸腾,蒸气可以上升到顶部,蒸气可以在顶部冷凝回到液态,而后可以流回到底部的贮存器。
蒸气发生室100内的压力可以保持在大气压力。或者,蒸气发生室100可以连接到包括但不限于真空泵的排气装置,以调节蒸气发生室100内部的压力。为了改变传热流体F的沸点或改变焊接环境,蒸气发生室内的压力可以保持在预定压力。
传热流体F可以是为了提供气相焊接所需的蒸气而选择的化学材料。可以考虑所产生的蒸气的沸点、环境影响和腐蚀性中的任何一者或更多者来选择传热流体F。传热流体F可以包括但不限于惰性有机液体。例如,传热流体F可以包括但不限于基于全氟聚醚(PFPE)的Galden溶液。Galden溶液的沸点可为230℃。
加热器110可以加热容纳在蒸气发生室100中的传热流体F以产生饱和蒸气。加热器110可以在蒸气发生室100的底部上包括但不限于浸没在传热流体F中的电阻器。或者,加热器110可以包括但不限于围绕贮存器罐的线圈形式的电阻器。
此外,作为温度控制机构的一部分的另一个加热器可以安装在蒸气发生室100的侧壁上,以在回流工艺期间控制蒸气发生室100的温度。
如图2和图3所示,根据示例实施例,基板台200可以被安装为能够在蒸气发生室100内上下移动。用于上下移动基板台200的升降驱动器可以包括但不限于各种类型的致动器,该致动器包括但不限于传送轨道、传送螺杆、传送带等。基板台200的两端部可分别由传送杆210支撑,且基板台200可以通过升降驱动器上下移动。
如图4、图5、图6和图7所示,根据示例实施例,基板台200可以具有用于支撑制品S的安置表面201,在蒸气发生室100中对该制品S执行焊接工艺。基板台200可以包括多个蒸气通道孔202和多个抽吸孔204,该多个蒸气通道孔202形成为贯穿基板台200,以允许蒸气移动,该多个抽吸孔204延伸为通向安置表面201。蒸气通道孔202和抽吸孔204可以为圆形或多边形形状。基板台200可以包括但不限于具有蒸气通道孔202的网格型支撑结构。蒸气通道孔202的直径D1可以为第一尺寸,并且抽吸孔204的直径D2可以为小于第一尺寸的第二尺寸。蒸气通道孔202的尺寸和形状、蒸气通道孔202的排列等除其它因素外还可以考虑蒸气发生室中的温度分布来确定。
基板台200可以包括与抽吸孔204连通的排气管线205。排气管线205可以在基板台200内延伸并且可以与抽吸孔204连通。抽吸支持机构300可以包括真空泵308,该真空泵308连接到排气管线205,并且在抽吸孔204中形成至少一部分真空。抽吸支持机构300还可以包括可膨胀管302,可膨胀管302布置在蒸气发生室100内并且将排气管线205与真空泵308彼此连接。例如,可膨胀管302可以包括但不限于波纹管。可膨胀管302的一端可以通过第一密封连接构件304连接到排气管线205的一端。可膨胀管302的另一端可以通过第二密封连接构件306连接到与真空泵308相连接的排气管。
如图8、图9、图10和图11所示,根据示例实施例,用于焊接的制品S可以支撑在基板台200的安置表面201上。例如,制品S可以包括基板20,电子部件30经由焊料40安装在基板20上。基板20的下表面可以通过贯穿基板台200的蒸气通道孔202而被暴露。基板20的下表面可以与在安置表面201中开口的抽吸孔204接触。
真空泵308可以通过排气管线205连接到抽吸孔204,以在抽吸孔204中形成至少一部分真空。当真空泵308从抽吸孔204抽吸空气时,基板20会因在抽吸孔204中形成的至少一部分真空而被吸附支撑在安置表面201上。此时,基板台200下方的蒸气可以移动穿过基板台200的蒸气通道孔202,并且蒸气可以与基板20的下表面接触。因此,蒸气可以充分供应到基板20的下表面以在制品S的整个区域实现更均匀的热传递。
如图3所示,根据示例实施例,用于焊接的制品S可以通过蒸气发生室100的门102传送到蒸气发生室100内,并且制品S可以通过传送机构104装载在基板台200上,该传送机构104包括但不限于导轨或传输推动器。
在制品S被装载之后,传热流体F的Galden溶液可由加热器110加热并开始沸腾。来自Galden溶液的饱和蒸气可以分布在蒸气发生室100的空间101内。此时,饱和蒸气的密度可以根据高度而变化,并且因此可以形成温度梯度。
例如,蒸气发生室在第三高度H3处的温度T1可以是100℃,蒸气发生室在第二高度H2处的温度T2可以是170℃,并且蒸气发生室在第一高度H1处的温度T3可以是230℃。焊料40可以包括但不限于Sn-Ag-Cu(SAC)焊料、Sn-Ag焊料等。因为SAC焊料的沸点是217℃,所以作为回流区段的第一高度H1处的温度T3可以保持在230℃。
在下文中,将描述根据示例实施例的使用图1的焊料回流设备执行气相回流工艺的方法。
首先,可以将用于焊接的制品S装载到蒸气发生室100中,并且可以加热蒸气发生室100中的传热流体F。
在示例实施例中,基板20可以通过蒸气发生室100的门102传送到蒸气发生室100中,其中,电子部件30经由焊料40安装在所述基板20上,随后,可以通过传送机构104将制品S装载在基板台200上,其中,所述传送机构104包括但不限于导轨或传送推动器。
在将制品S装载到基板台200上之后,真空泵308可以通过排气管线205连接到抽吸孔204,以在抽吸孔204中形成至少一部分真空。当真空泵308从抽吸孔204抽吸空气时,基板20可以通过在抽吸孔204中形成的至少一部分真空而被吸附支撑在安置表面201上。
在将制品S吸附支撑在基板台200上之后,传热流体F的Galden溶液可以由加热器110加热并且开始沸腾。可以使来自Galden溶液的饱和蒸气分布在蒸气发生室100的空间101内。此时,蒸气可以具有随高度变化的密度梯度,因此,可以形成在蒸气发生室100内的沿着竖直方向的温度梯度。
制品S在第三高度H3处被预热之后,制品可以被移动到第二高度H2并被激活(被浸泡)。可以将基板20预热,例如,以防止各种焊接缺陷并提供更牢固且导电的接点。在第三高度H3和第二高度H2处可能存在在比主蒸气层冷的温度下产生的二次气相。根据示例实施例,在第二高度H2处不发生焊接,但是与第三高度H3相比,第二高度H2处的温度升高。
制品S可以移动到第一高度H1,使得焊料40可以回流。当制品S浸没在第一高度H1处的蒸气中时,蒸气可用作传热介质。由于第一高度H1处的蒸气的温度与基板20的温度彼此不同,因此蒸气会在制品S的表面上冷凝以形成层。在制品S的表面上冷凝的蒸气可以在冷凝期间将潜热传递到基板20的表面以使焊膏回流。
此时,基板台200下方的蒸气可以移动通过基板台200的蒸气通道孔202以供应至基板20的下表面。因此,蒸气可以充分地供应到基板20的下表面,以在制品S的整个区域实现更均匀的热传递。
然后,在焊料40被焊接之后,制品S可以向腔室的顶部移动,而后可以冷却。因此,焊点可以冷却并固化。
图12是示出根据示例实施例的焊料回流设备的截面图。图13是示出根据示例实施例的装载到图12的焊料回流设备中的固定夹具的下夹具的俯视图。图14是根据示例实施例的沿图13中的E-E’线截取的截面图。图15是示出根据示例实施例的图12中的固定夹具的上夹具的俯视图。图16是根据示例实施例的沿图15中的F-F’线截取的截面图。图17是示出根据示例实施例的支撑在图12的焊料回流设备的基板台200上的固定夹具的俯视图。图18是根据示例实施例的沿图17中的G-G’线截取的截面图。
图19是根据示例实施例的沿图17中的H-H’线截取的截面图。除了另外的固定夹具之外,根据图12所示的示例实施例的焊料回流设备可以与参考图1的示例实施例描述的焊料回流设备基本相同或相似。因此,相同的附图标记将用于相同或相似的元件,并且将省略关于上述元件的任何进一步重复的说明。
参考图12、图13、图14、图15、图16、图17、图18和图19,根据示例实施例,焊料回流设备11可以包括蒸气发生室100、加热器110、基板台200和固定夹具400,该固定夹具400被支撑在基板台200的安置表面201上。
在示例实施例中,固定夹具400可以安装在基板20上以按压基板20从而固定制品S。在基板20被按压且被固定的状态下,固定夹具400可以被支撑在基板台200的安置表面201上。
如图13、图14、图15和图16所示,根据示例实施例,固定夹具400可以包括下夹具410和固定在下夹具410上的上夹具420。下夹具410可以包括下基板412,基板20安置在下基板412上,并且第二蒸气通道孔414形成为穿过下基板412。上夹具420可以固定地布置在下夹具410上以按压基板20。上夹具420和下夹具410可以通过紧固件彼此耦接,该紧固件包括但不限于磁性材料。
下基板412可以包括具有第二蒸气通道孔414的网格型支撑结构。上夹具420可以具有缘部422和按压肋424,该缘部422按压基板20的外围区域,该按压肋424从缘部422向内延伸以形成暴露基板20上的电子部件30的窗口423。当基板20被支撑在下夹具410上时,按压肋424可以沿着基板20的切割区域延伸。
如图17、图18和图19所示,根据示例实施例,在待焊接的制品S被固定夹具400按压和固定时,固定夹具400可以被支撑在基板台200的安置表面201上。基板20的下表面可以通过贯穿下基板412的第二蒸气通道孔414暴露。下夹具410的第二蒸气通道孔414可以分别与下方的基板台200的蒸气通道孔202连通。第二蒸气通道孔414的直径D3可以具有与蒸气通道孔202的直径D1相同的第三尺寸。
下夹具410的下表面可以与在安置表面201中开口的抽吸孔204接触。当真空泵308从抽吸孔204抽吸空气时,固定夹具400的下夹具410可以通过在抽吸孔204中形成的至少一部分真空而被吸附支撑在安置表面201上。此时,基板台200下方的蒸气可以通过基板台200的蒸气通道孔202以及下夹具410的第二蒸气通道孔414与基板20的下表面接触。因此,蒸气可通过基板20的下表面而被充分供应,以在制品S的整个区域实现更均匀的热传递。
在下文中,将描述根据示例实施例的使用图1的焊料回流设备制造电子器件的方法。将描述电子器件是半导体封装件的情况。然而,应当理解,根据示例实施例的电子器件的制造方法不限于此。
图20是示出根据示例实施例的制造电子器件的方法的流程图。图21、图22、图23、图24、图25、图26和图27是示出根据示例实施例的制造电子器件的方法的视图。图21是示出根据示例实施例的安装有半导体芯片的带状基板的俯视图。图22、图24、图25和图26是根据示例实施例的沿图21中的H-H’线截取的截面图。
参考图20、图21、图22、图23、图24、图25、图26和图27,根据示例实施例,首先,可以提供包括多个基板焊盘22的基板20,可以将焊膏24涂覆在基板20的基板焊盘22上(S100),并且可以将焊料40布置在焊膏24上(S110)。
如图21所示,根据示例实施例,基板20可以包括多层电路板作为具有彼此相对的上表面和下表面的封装基板。基板20可以是用于制造半导体带的带状基板,带状基板包括但不限于印刷电路板(PCB)。
基板20可以具有:第一侧部S1和第二侧部S2,该第一侧部S1和第二侧部S2在与平行于上表面的第二方向(Y方向)平行的方向上延伸,并且彼此面对;以及第三侧部S3和第四侧部S4,该第三侧部S3和第四侧部S4在与垂直于第二方向的第一方向(X方向)平行的方向上延伸,并且彼此面对。当从俯视图观察时,基板20可以为四边形。基板20可以具有预定面积(例如,77.5mm×240mm)。
基板20可以包括安装区域MR和围绕安装区域MR的切割区域CR,半导体芯片安装在安装区域MR上。多个电子部件30可以分别布置在基板20的安装区域MR上。例如,数十个到数百个电子部件30可以矩阵形式布置在基板20上。
如图22所示,根据示例实施例,可以将焊膏24涂覆在基板20的多个基板焊盘22中的每一个基板焊盘上。基板20的基板焊盘22之间的节距可以在几十微米的范围内。
可以将焊膏24印刷到基板20的基板焊盘22上。例如,焊膏24可以通过模板印刷机等印刷。模板可以是具有与随后放置的焊料阵列相对应的多个开口的金属箔。在印刷期间,可以将焊膏24印刷为填充模板的开口。焊膏24可以包括但不限于焊粉(solder powder)和助焊剂。助焊剂可以包括但不限于树脂、溶剂、活化剂、抗氧化剂等。
或者,可以将焊膏涂覆到形成在半导体芯片30上的焊料40的表面。
如图23所示,根据示例实施例,可以将焊料40形成在安装于基板20上的电子部件30上。电子部件30可以是半导体芯片。或者,电子部件可以是半导体封装件。在这种情况下,基板20可以是模块板。
可以将多个输入/输出焊盘32形成在电子部件30的第一表面31a上。可以将焊料40分别形成在输入/输出焊盘32上。在输入/输出焊盘32上形成凸块下金属(UBM)之后,可以将焊料40形成在凸块下金属上。
如图24所示,根据示例实施例,可以以焊料40位于电子部件30的输入/输出焊盘32与焊膏24之间的方式将电子部件30布置在基板20上。可以通过倒装芯片接合法将半导体芯片安装在基板20上。
然后,可以执行气相回流焊接(S120)。
参照图25,根据示例实施例,可以将安装有电子部件30的基板20装载到图1的示例实施例的焊料回流设备10的蒸气发生室100中,并且在基板20在蒸气发生室100内沿竖直方向连续移动时,处于蒸气状态的传热流体F可以与基板20的表面接触以加热焊膏24,从而使焊料40回流,并且因此可以在基板焊盘22与输入/输出焊盘32之间形成焊料凸块。
在示例实施例中,可以将制品S装载到基板台200上,真空泵308可以通过排气管线205连接到抽吸孔204,以在抽吸孔204中形成至少一部分真空。当真空泵308从抽吸孔204抽吸空气时,可以通过在抽吸孔204中形成的至少一部分真空而将基板20吸附支撑在安置表面201上。
在制品S被吸附支撑在基板台200上之后,传热流体F的Galden溶液可以由加热器110加热并且开始沸腾。来自Galden溶液的饱和蒸气可以分布在蒸气发生室100的空间101内。此时,蒸气可以具有随高度变化的密度梯度,因此,可以在蒸气发生室100内形成沿着竖直方向的温度梯度。
制品S在第三高度H3处被预热之后,制品可以移动到第二高度H2并被激活(被浸泡)。可以将基板20预热以防止各种焊接缺陷并且提供更牢固且导电的接点。在第三高度H3和第二高度H2处可能存在在比主蒸气层冷的温度下产生的二次气相。在第二高度H2处不发生焊接,但是与第三高度H3相比,第二高度H2处的温度升高。
可以将制品S移动到第一高度H1,使得焊料40可以回流。当将制品S浸没在第一高度H1处的蒸气中时,蒸气可用作传热介质。由于第一高度H1处的蒸气的温度与基板20的温度彼此不同,因此蒸气可以在制品S的表面上冷凝以形成层。在表面上冷凝的蒸气可以在冷凝期间将潜热传递到基板20的表面以使焊膏回流。
此时,基板台200下方的蒸气可以移动穿过基板台200的开口及基板20的蒸气通道孔,以供应至焊料40及焊料40周围。因此,可以将蒸气充分供应到与基板20的蒸气通道孔邻近的区域,以在制品S的整个区域上实现更均匀的热传递。
然后,在焊接焊料40之后,制品S可以向腔室的顶部移动而后可以冷却。因此,可以使焊点冷却并固化。
参考图26,根据示例实施例,可以将模制构件50形成在基板20上以覆盖电子部件30(S130)。
在示例实施例中,可以利用转印模制设备将模制构件50形成在基板20上。可以将基板20布置在模制设备的模具的模制空间中,当下模和上模被夹紧时,密封材料可以在高温和高压下流动,使得液体密封材料在模制空间内流动并固化以形成覆盖电子部件30的模制构件。例如,密封材料可以包括但不限于环氧塑封料(EMC)。
参考图27,根据示例实施例,可以通过锯切工艺来锯切基板20以制成半导体封装件。
在示例实施例中,可以在基板20的下表面上的外部连接焊盘上形成包括但不限于焊球的外部连接构件,并且可以通过包括但不限于切割刃的切割装置来去除基板20的切割区域CR。因此,可以从基板20分离出单个的半导体封装件P。
通过上述工艺,可以制造包括逻辑器件或存储器件的半导体封装件以及包括该半导体封装件的半导体模块。半导体封装件可以包括但不限于:逻辑器件,逻辑器件包括但不限于中央处理器(CPU)、主处理单元(MPU)或应用处理器(AP)等;以及易失性存储器件或非易失性存储器件,易失性存储器件包括但不限于DRAM器件、HBM器件,非易失性存储器件包括但不限于闪存器件、PRAM器件、MRAM器件、ReRAM器件等。
前述内容举例说明了示例实施例且不应被解释为对示例实施例的限制。尽管已经描述了几个示例实施例,但是本领域技术人员将容易理解,在实质上不脱离本公开的新颖教导和优点的情况下,在示例实施例中可以进行许多修改。因此,所有这些修改旨在包括在由所附权利要求限定的范围内。
Claims (20)
1.一种焊料回流设备,所述焊料回流设备包括:
蒸气发生室,所述蒸气发生室被配置为容纳传热流体并且容纳通过加热所述传热流体而产生的饱和蒸气;
加热器,所述加热器被配置为对容纳在所述蒸气发生室中的所述传热流体进行加热;以及
基板台,所述基板台被配置为能够在所述蒸气发生室内上下移动,所述基板台包括:
安置表面,
第一蒸气通道,所述第一蒸气通道贯穿所述基板台,并且被配置为使得所述蒸气能够移动穿过所述第一蒸气通道,以及
抽吸通道,所述抽吸通道贯穿所述基板台以通向所述安置表面,并且至少一部分真空被产生在所述抽吸通道中。
2.根据权利要求1所述的焊料回流设备,其中,每个所述第一蒸气通道具有第一直径,并且
其中,每个所述抽吸通道具有小于所述第一直径的第二直径。
3.根据权利要求1所述的焊料回流设备,所述焊料回流设备还包括:
排气管线,所述排气管线在所述基板台内延伸,以与所述抽吸通道连通。
4.根据权利要求3所述的焊料回流设备,所述焊料回流设备还包括:
真空泵,所述真空泵连接到所述排气管线,并且所述真空泵被配置为在所述抽吸通道中形成所述至少一部分真空。
5.根据权利要求4所述的焊料回流设备,所述焊料回流设备还包括:
可膨胀管,所述可膨胀管布置在所述蒸气发生室中并且将所述排气管线连接至所述真空泵。
6.根据权利要求1所述的焊料回流设备,其中,所述传热流体包括Galden溶液。
7.根据权利要求1所述的焊料回流设备,所述焊料回流设备还包括:
固定夹具,所述固定夹具被支撑在所述基板台的所述安置表面上并且被配置为支撑基板,其中,电子部件经由焊料安装在所述基板上。
8.根据权利要求7所述的焊料回流设备,其中,所述固定夹具包括:
下夹具,所述基板安置在所述下夹具上,所述下夹具包括分别对应于所述第一蒸气通道的第二蒸气通道;以及
上夹具,所述上夹具被固定地布置在所述下夹具上并且被配置为按压所述基板。
9.根据权利要求8所述的焊料回流设备,其中,所述上夹具包括:
缘部,所述缘部被配置为按压所述基板的外围区域;以及
按压肋,所述按压肋从所述缘部向内延伸,以形成暴露所述基板上的所述电子部件的窗口。
10.根据权利要求7所述的焊料回流设备,其中,所述基板包括封装基板,并且
其中,所述电子部件包括半导体芯片。
11.一种焊料回流设备,所述焊料回流设备包括:
蒸气发生室,所述蒸气发生室被配置为容纳传热流体;
加热器,所述加热器被配置为加热所述传热流体,以从所述传热流体产生饱和蒸气;
基板台,所述基板台被配置为能够在所述蒸气发生室内上下移动,所述基板台包括被配置为支撑基板的安置表面,其中,电子部件经由焊料安装在所述基板上;
第一蒸气通道,所述第一蒸气通道贯穿所述基板台;以及
抽吸支持机构,所述抽吸支持机构包括:
抽吸通道,所述抽吸通道贯穿所述基板台,以通向所述安置表面;以及
真空泵,所述真空泵被配置为在所述抽吸通道中产生至少一部分真空。
12.根据权利要求11所述的焊料回流设备,其中,所述抽吸支持机构还包括:
排气管线,所述排气管线在所述基板台内延伸,并且所述排气管线与所述抽吸通道连通。
13.根据权利要求12所述的焊料回流设备,其中,所述抽吸支持机构还包括可膨胀管,所述可膨胀管布置在所述蒸气发生室中并且将所述排气管线连接到所述真空泵。
14.根据权利要求11所述的焊料回流设备,其中,每个所述第一蒸气通道具有第一直径,并且
其中,每个所述抽吸通道具有小于所述第一直径的第二直径。
15.根据权利要求11所述的焊料回流设备,所述焊料回流设备还包括:
固定夹具,所述固定夹具被支撑在所述基板台的所述安置表面上并且被配置为支撑所述基板。
16.根据权利要求15所述的焊料回流设备,其中,所述固定夹具包括:
下夹具,所述基板安置在所述下夹具上,所述下夹具包括分别对应于所述第一蒸气通道的第二蒸气通道;以及
上夹具,所述上夹具被固定地布置在所述下夹具上并且被配置为按压所述基板。
17.根据权利要求16所述的焊料回流设备,其中,所述上夹具包括:
缘部,所述缘部被配置为按压所述基板的外围区域;
按压肋,所述按压肋从所述缘部向内延伸,以形成暴露所述基板上的所述电子部件的窗口。
18.根据权利要求11所述的焊料回流设备,其中,所述基板包括封装基板,并且
其中,所述电子部件包括半导体芯片。
19.根据权利要求11所述的焊料回流设备,所述焊料回流设备还包括:
传送杆,所述传送杆支撑所述基板台的端部;以及
致动器,所述致动器被配置为使所述基板台沿所述传送杆上下移动。
20.一种焊料回流设备,所述焊料回流设备包括:
蒸气发生室,所述蒸气发生室被配置为容纳传热流体并且容纳通过加热所述传热流体而产生的饱和蒸气;
加热器,所述加热器被配置为对容纳在所述蒸气发生室中的所述传热流体进行加热;
基板台,所述基板台被配置为能够在所述蒸气发生室内上下移动,所述基板台包括:
安置表面;
蒸气通道,所述蒸气通道贯穿所述基板台,并被配置为使得所述蒸气能够移动穿过所述蒸气通道;和
抽吸通道,所述抽吸通道在所述基板台中延伸以通向所述安置表面;以及
固定夹具,所述固定夹具被支撑在所述基板台的所述安置表面上并且被配置为支撑基板,其中,电子部件经由焊料安装在所述基板上。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2022-0096842 | 2022-08-03 | ||
KR1020220096842A KR20240018915A (ko) | 2022-08-03 | 2022-08-03 | 솔더 리플로우 장치 및 이를 이용한 전자 장치의 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN117506049A true CN117506049A (zh) | 2024-02-06 |
Family
ID=89744478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310743208.1A Pending CN117506049A (zh) | 2022-08-03 | 2023-06-21 | 焊料回流设备和制造电子器件的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20240047410A1 (zh) |
KR (1) | KR20240018915A (zh) |
CN (1) | CN117506049A (zh) |
-
2022
- 2022-08-03 KR KR1020220096842A patent/KR20240018915A/ko unknown
-
2023
- 2023-03-27 US US18/126,858 patent/US20240047410A1/en active Pending
- 2023-06-21 CN CN202310743208.1A patent/CN117506049A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20240047410A1 (en) | 2024-02-08 |
KR20240018915A (ko) | 2024-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5862588A (en) | Method for restraining circuit board warp during area array rework | |
US7838987B2 (en) | Electronic device, standoff member, and method of manufacturing electronic device | |
US6080650A (en) | Method and apparatus for attaching particles to a substrate | |
KR102592226B1 (ko) | 반도체 패키지 본딩헤드 및 본딩방법 | |
CN105789074A (zh) | 用于制造半导体器件的方法 | |
KR102276278B1 (ko) | 반도체 공정 진단을 위한 플라즈마 센서 장치 및 이의 제조 방법 | |
TWI247365B (en) | Apparatus for manufacturing semiconductor devices, method of manufacturing the semiconductor devices, and semiconductor device manufactured by the apparatus and method | |
CN117506049A (zh) | 焊料回流设备和制造电子器件的方法 | |
KR20080084853A (ko) | 실리콘 디바이스를 장착하기 위한 기판 및 그 방법 | |
US6146920A (en) | Bump formation method | |
US20240178181A1 (en) | Solder reflow apparatus and method of manufacturing electronic device | |
US20240047411A1 (en) | Solder reflow apparatus and method of manufacturing an electronic device | |
US20240049400A1 (en) | Solder reflow apparatus and method of manufacturing an electronic device | |
JP2001230275A (ja) | 半導体集積回路装置の製造方法 | |
KR20240079125A (ko) | 솔더 리플로우 장치 및 이를 이용한 전자 장치의 제조 방법 | |
US20240113067A1 (en) | Solder reflow apparatus | |
KR102260077B1 (ko) | 플럭스 전사 장치 | |
JP3266414B2 (ja) | はんだ供給法 | |
JPH0964521A (ja) | 半田供給装置及び半田供給方法 | |
KR102561680B1 (ko) | 라인 빔 레이저를 이용한 솔더 볼의 부착 방법 및 그 장치 | |
US11508598B2 (en) | Frame jig for manufacturing semiconductor package, apparatus including same, and method using same | |
US20240128229A1 (en) | Solder reflow apparatus | |
KR101541392B1 (ko) | 반도체 제조장치 및 이를 이용한 반도체소자 제조방법 | |
TWI790747B (zh) | 基板保持具以及接合系統和接合方法 | |
JP4618186B2 (ja) | 電子部品搭載装置および半田ペースト転写ユニットならびに電子部品実装方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication |