CN1174577C - 产生波长不同的激光 - Google Patents

产生波长不同的激光 Download PDF

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Publication number
CN1174577C
CN1174577C CNB971995664A CN97199566A CN1174577C CN 1174577 C CN1174577 C CN 1174577C CN B971995664 A CNB971995664 A CN B971995664A CN 97199566 A CN97199566 A CN 97199566A CN 1174577 C CN1174577 C CN 1174577C
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CN
China
Prior art keywords
laser
lasers
laser units
light
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB971995664A
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English (en)
Chinese (zh)
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CN1237298A (zh
Inventor
O
O·扎尔恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
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Telefonaktiebolaget LM Ericsson AB
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Filing date
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Publication of CN1237298A publication Critical patent/CN1237298A/zh
Application granted granted Critical
Publication of CN1174577C publication Critical patent/CN1174577C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12142—Modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
CNB971995664A 1996-09-04 1997-09-02 产生波长不同的激光 Expired - Fee Related CN1174577C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE96032198 1996-09-04
SE9603219A SE507376C2 (sv) 1996-09-04 1996-09-04 Våglängdsavstämbar laseranordning

Publications (2)

Publication Number Publication Date
CN1237298A CN1237298A (zh) 1999-12-01
CN1174577C true CN1174577C (zh) 2004-11-03

Family

ID=20403771

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB971995664A Expired - Fee Related CN1174577C (zh) 1996-09-04 1997-09-02 产生波长不同的激光

Country Status (11)

Country Link
US (1) US6215804B1 (enExample)
EP (1) EP1010281B1 (enExample)
JP (1) JP3891362B2 (enExample)
KR (1) KR100411871B1 (enExample)
CN (1) CN1174577C (enExample)
AU (1) AU4140697A (enExample)
CA (1) CA2264934C (enExample)
DE (1) DE69736403T2 (enExample)
SE (1) SE507376C2 (enExample)
TW (1) TW363292B (enExample)
WO (1) WO1998010544A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100429848C (zh) * 2006-01-20 2008-10-29 中国科学院半导体研究所 波长可选分布反馈激光器二维阵列集成组件
CN105379159B (zh) * 2013-06-13 2018-07-24 祥茂光电科技股份有限公司 具有多个序列式区段的可调谐激光器及其应用系统与方法

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US6438148B1 (en) 1998-12-15 2002-08-20 Nortel Networks Limited Method and device for encoding data into high speed optical train
US6650673B2 (en) 1998-12-15 2003-11-18 Bookham Technology, Plc Generation of short optical pulses using strongly complex coupled DFB lasers
SE518827C2 (sv) 1999-02-17 2002-11-26 Altitun Ab Metod för karakterisering av en avstämbar laser
SE515435C2 (sv) * 1999-02-17 2001-08-06 Altitun Ab Metod för att våglängdslåsa och modkontrollera en avstämbar laser
AU766362B2 (en) 1999-09-03 2003-10-16 Regents Of The University Of California, The Tunable laser source with integrated optical modulator
EP1087478A1 (en) * 1999-09-27 2001-03-28 Nortel Networks Limited Generation of short optical pulses using strongly complex coupled DFB lasers.
US6636544B2 (en) * 2000-12-06 2003-10-21 Applied Optoelectronics, Inc. Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays
JP4105403B2 (ja) * 2001-04-26 2008-06-25 日本オプネクスト株式会社 半導体光集積素子の製造方法
FR2824152B1 (fr) * 2001-04-27 2004-01-30 Cit Alcatel Emetteur optique comprenant un modulateur compose d'une pluralite d'elements de modulation
US6628686B1 (en) * 2001-11-16 2003-09-30 Fox-Tek, Inc Integrated multi-wavelength and wideband lasers
JP2003209316A (ja) * 2002-01-16 2003-07-25 Photonixnet Corp 波長多重化装置およびその調整方法
GB0206226D0 (en) * 2002-03-16 2002-05-01 Intense Photonics Ltd Electro-absorption modulator with broad optical bandwidth
US20030227949A1 (en) * 2002-06-05 2003-12-11 Mark Meyers Integrated, temperature insensitive wavelength locker for use in laser packages
EP1400835B1 (en) 2002-09-17 2011-11-16 Nippon Telegraph And Telephone Corporation Semiconductor optical modulator and laser with such optical modulator
GB2402544A (en) * 2003-06-03 2004-12-08 Agilent Technologies Inc Electromagnetic Radiation Emission Apparatus
US7301977B2 (en) * 2004-06-10 2007-11-27 Nanoplus Gmbh Tuneable unipolar lasers
GB2433644A (en) * 2005-12-22 2007-06-27 Bookham Technology Plc A method of controlling a laser
US7826509B2 (en) * 2006-12-15 2010-11-02 President And Fellows Of Harvard College Broadly tunable single-mode quantum cascade laser sources and sensors
WO2009152658A1 (zh) * 2008-06-19 2009-12-23 中兴通讯股份有限公司 可调谐激光器模块及其控制方法
JP5784364B2 (ja) * 2010-08-17 2015-09-24 アンリツ株式会社 半導体発光素子の駆動方法、発光装置、および当該発光装置を用いた光パルス試験器
JP2012084627A (ja) * 2010-10-08 2012-04-26 Anritsu Corp 半導体発光素子およびそれを用いた光パルス試験器
TW201334335A (zh) * 2012-01-13 2013-08-16 Corning Inc 具有由串接級組成的活性核心之ｍｉｄ－ｉｒ多波長串聯的分散式－回授雷射
US10020636B2 (en) 2013-06-13 2018-07-10 Applied Optoelectronics, Inc. Tunable laser with multiple in-line sections including sampled gratings
US20160352072A1 (en) * 2014-02-04 2016-12-01 Board Of Regents, The University Of Texas System Monolithic tunable terahertz radiation source using nonlinear frequency mixing in quantum cascade lasers
US9531155B2 (en) * 2014-04-09 2016-12-27 Applied Optoelectronics, Inc. Switched radio frequency (RF) driver for tunable laser with multiple in-line sections
US10283936B2 (en) * 2015-07-30 2019-05-07 Agilent Technologies, Inc. Quantum cascade laser with serially configured gain sections
CN106451059A (zh) * 2016-11-21 2017-02-22 中国电子科技集团公司第四十四研究所 激光器单模稳定性控制装置及方法
JP2019008179A (ja) * 2017-06-26 2019-01-17 日本電信電話株式会社 半導体光素子
CN108471046B (zh) * 2018-05-14 2020-08-04 南京大学 一种半导体激光器和控制方法
DE102018127977A1 (de) * 2018-11-08 2020-05-14 Osram Opto Semiconductors Gmbh Diodenlaser und verfahren zum betreiben eines diodenlasers
CN114300934B (zh) * 2020-09-21 2024-05-14 华为技术有限公司 一种激光器芯片、光发射组件、光模块及激光生成方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100429848C (zh) * 2006-01-20 2008-10-29 中国科学院半导体研究所 波长可选分布反馈激光器二维阵列集成组件
CN105379159B (zh) * 2013-06-13 2018-07-24 祥茂光电科技股份有限公司 具有多个序列式区段的可调谐激光器及其应用系统与方法

Also Published As

Publication number Publication date
TW363292B (en) 1999-07-01
EP1010281B1 (en) 2006-07-26
WO1998010544A2 (en) 1998-03-12
AU4140697A (en) 1998-03-26
DE69736403D1 (de) 2006-09-07
KR100411871B1 (ko) 2003-12-24
CA2264934C (en) 2010-02-02
US6215804B1 (en) 2001-04-10
SE9603219L (sv) 1998-03-05
JP3891362B2 (ja) 2007-03-14
SE507376C2 (sv) 1998-05-18
KR20000068447A (ko) 2000-11-25
CA2264934A1 (en) 1998-03-12
WO1998010544A3 (en) 2000-11-09
EP1010281A1 (en) 2000-06-21
SE9603219D0 (sv) 1996-09-04
CN1237298A (zh) 1999-12-01
HK1023240A1 (en) 2000-09-01
DE69736403T2 (de) 2006-11-30
JP2002511979A (ja) 2002-04-16

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Granted publication date: 20041103

Termination date: 20160902