CA2264934C - Producing laser light of different wavelengths - Google Patents
Producing laser light of different wavelengths Download PDFInfo
- Publication number
- CA2264934C CA2264934C CA002264934A CA2264934A CA2264934C CA 2264934 C CA2264934 C CA 2264934C CA 002264934 A CA002264934 A CA 002264934A CA 2264934 A CA2264934 A CA 2264934A CA 2264934 C CA2264934 C CA 2264934C
- Authority
- CA
- Canada
- Prior art keywords
- laser
- laser units
- units
- light
- lasers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 239000000463 material Substances 0.000 claims description 7
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- 239000011295 pitch Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- YIFLQBNCXIFWEL-KBXCAEBGSA-N 1-(7-methoxy-benzo[1,3]dioxol-5-yl)-1,2-bis-(2-methyl-but-2-enoyloxy)-propane Natural products COc1cc(cc2OCOc12)[C@H](OC(=O)C(=CC)C)[C@H](C)OC(=O)C(=CC)C YIFLQBNCXIFWEL-KBXCAEBGSA-N 0.000 description 1
- YIFLQBNCXIFWEL-UHFFFAOYSA-N 2-epilaserine Natural products COc1cc(cc2OCOc12)C(OC(=O)C(=C/C)C)C(C)OC(=O)C(=C/C)C YIFLQBNCXIFWEL-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9603219A SE507376C2 (sv) | 1996-09-04 | 1996-09-04 | Våglängdsavstämbar laseranordning |
| SE9603219-8 | 1996-09-04 | ||
| PCT/SE1997/001464 WO1998010544A2 (en) | 1996-09-04 | 1997-09-02 | Producing laser light of different wavelengths |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2264934A1 CA2264934A1 (en) | 1998-03-12 |
| CA2264934C true CA2264934C (en) | 2010-02-02 |
Family
ID=20403771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002264934A Expired - Fee Related CA2264934C (en) | 1996-09-04 | 1997-09-02 | Producing laser light of different wavelengths |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6215804B1 (enExample) |
| EP (1) | EP1010281B1 (enExample) |
| JP (1) | JP3891362B2 (enExample) |
| KR (1) | KR100411871B1 (enExample) |
| CN (1) | CN1174577C (enExample) |
| AU (1) | AU4140697A (enExample) |
| CA (1) | CA2264934C (enExample) |
| DE (1) | DE69736403T2 (enExample) |
| SE (1) | SE507376C2 (enExample) |
| TW (1) | TW363292B (enExample) |
| WO (1) | WO1998010544A2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6650673B2 (en) | 1998-12-15 | 2003-11-18 | Bookham Technology, Plc | Generation of short optical pulses using strongly complex coupled DFB lasers |
| US6438148B1 (en) | 1998-12-15 | 2002-08-20 | Nortel Networks Limited | Method and device for encoding data into high speed optical train |
| SE515435C2 (sv) * | 1999-02-17 | 2001-08-06 | Altitun Ab | Metod för att våglängdslåsa och modkontrollera en avstämbar laser |
| SE518827C2 (sv) | 1999-02-17 | 2002-11-26 | Altitun Ab | Metod för karakterisering av en avstämbar laser |
| EP1218973A4 (en) | 1999-09-03 | 2005-11-16 | Univ California | TUNABLE LASER SOURCE WITH INTEGRATED OPTICAL MODULATOR |
| EP1087478A1 (en) * | 1999-09-27 | 2001-03-28 | Nortel Networks Limited | Generation of short optical pulses using strongly complex coupled DFB lasers. |
| US6636544B2 (en) * | 2000-12-06 | 2003-10-21 | Applied Optoelectronics, Inc. | Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays |
| JP4105403B2 (ja) * | 2001-04-26 | 2008-06-25 | 日本オプネクスト株式会社 | 半導体光集積素子の製造方法 |
| FR2824152B1 (fr) * | 2001-04-27 | 2004-01-30 | Cit Alcatel | Emetteur optique comprenant un modulateur compose d'une pluralite d'elements de modulation |
| US6628686B1 (en) * | 2001-11-16 | 2003-09-30 | Fox-Tek, Inc | Integrated multi-wavelength and wideband lasers |
| JP2003209316A (ja) * | 2002-01-16 | 2003-07-25 | Photonixnet Corp | 波長多重化装置およびその調整方法 |
| GB0206226D0 (en) * | 2002-03-16 | 2002-05-01 | Intense Photonics Ltd | Electro-absorption modulator with broad optical bandwidth |
| US20030227949A1 (en) * | 2002-06-05 | 2003-12-11 | Mark Meyers | Integrated, temperature insensitive wavelength locker for use in laser packages |
| EP1400835B1 (en) | 2002-09-17 | 2011-11-16 | Nippon Telegraph And Telephone Corporation | Semiconductor optical modulator and laser with such optical modulator |
| GB2402544A (en) * | 2003-06-03 | 2004-12-08 | Agilent Technologies Inc | Electromagnetic Radiation Emission Apparatus |
| US7301977B2 (en) * | 2004-06-10 | 2007-11-27 | Nanoplus Gmbh | Tuneable unipolar lasers |
| GB2433644A (en) * | 2005-12-22 | 2007-06-27 | Bookham Technology Plc | A method of controlling a laser |
| CN100429848C (zh) * | 2006-01-20 | 2008-10-29 | 中国科学院半导体研究所 | 波长可选分布反馈激光器二维阵列集成组件 |
| US7826509B2 (en) * | 2006-12-15 | 2010-11-02 | President And Fellows Of Harvard College | Broadly tunable single-mode quantum cascade laser sources and sensors |
| WO2009152658A1 (zh) * | 2008-06-19 | 2009-12-23 | 中兴通讯股份有限公司 | 可调谐激光器模块及其控制方法 |
| JP5784364B2 (ja) * | 2010-08-17 | 2015-09-24 | アンリツ株式会社 | 半導体発光素子の駆動方法、発光装置、および当該発光装置を用いた光パルス試験器 |
| JP2012084627A (ja) * | 2010-10-08 | 2012-04-26 | Anritsu Corp | 半導体発光素子およびそれを用いた光パルス試験器 |
| EP2803122B1 (en) | 2012-01-13 | 2020-06-10 | Thorlabs Quantum Electronics, Inc. | Mid-ir multiwavelength concatenated distributed-feedback laser with an active core made of cascaded stages |
| US20150357791A1 (en) * | 2013-06-13 | 2015-12-10 | Applied Optoelectronics, Inc. | Tunable laser with multiple in-line sections |
| US10020636B2 (en) | 2013-06-13 | 2018-07-10 | Applied Optoelectronics, Inc. | Tunable laser with multiple in-line sections including sampled gratings |
| WO2015163965A2 (en) * | 2014-02-04 | 2015-10-29 | Board Of Regents, The University Of Texas System | Monolithic tunable terahertz radiation source using nonlinear frequency mixing in quantum cascade lasers |
| US9531155B2 (en) * | 2014-04-09 | 2016-12-27 | Applied Optoelectronics, Inc. | Switched radio frequency (RF) driver for tunable laser with multiple in-line sections |
| US10283936B2 (en) * | 2015-07-30 | 2019-05-07 | Agilent Technologies, Inc. | Quantum cascade laser with serially configured gain sections |
| CN106451059A (zh) * | 2016-11-21 | 2017-02-22 | 中国电子科技集团公司第四十四研究所 | 激光器单模稳定性控制装置及方法 |
| JP2019008179A (ja) * | 2017-06-26 | 2019-01-17 | 日本電信電話株式会社 | 半導体光素子 |
| CN108471046B (zh) * | 2018-05-14 | 2020-08-04 | 南京大学 | 一种半导体激光器和控制方法 |
| DE102018127977A1 (de) * | 2018-11-08 | 2020-05-14 | Osram Opto Semiconductors Gmbh | Diodenlaser und verfahren zum betreiben eines diodenlasers |
| CN114300934B (zh) * | 2020-09-21 | 2024-05-14 | 华为技术有限公司 | 一种激光器芯片、光发射组件、光模块及激光生成方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0194335B1 (en) * | 1985-03-14 | 1991-01-02 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Improved semiconductor laser devices |
| EP0370122B1 (en) * | 1988-11-22 | 1992-02-19 | Okayama Jonan Denki Kabushiki Kaisha | Pulverizing method |
| CA2018928C (en) * | 1989-06-14 | 1994-07-26 | Akihiko Oka | Semiconductor laser device |
| US5048040A (en) * | 1990-03-08 | 1991-09-10 | Xerox Corporation | Multiple wavelength p-n junction semiconductor laser with separated waveguides |
| US5233187A (en) * | 1991-01-22 | 1993-08-03 | Canon Kabushiki Kaisha | Multi-wavelength light detecting and/or emitting apparatuses having serially arranged grating directional couplers |
| US5117469A (en) * | 1991-02-01 | 1992-05-26 | Bell Communications Research, Inc. | Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well |
| FR2681191A1 (fr) * | 1991-09-06 | 1993-03-12 | France Telecom | Composant integre laser-modulateur a super-reseau tres couple. |
| EP0539015B1 (en) * | 1991-10-18 | 1996-10-16 | Xerox Corporation | Multiple wavelength semiconductor laser |
| US5353295A (en) | 1992-08-10 | 1994-10-04 | The Board Of Trustees Of The University Of Illinois | Semiconductor laser device with coupled cavities |
| US5642371A (en) * | 1993-03-12 | 1997-06-24 | Kabushiki Kaisha Toshiba | Optical transmission apparatus |
| US5379318A (en) * | 1994-01-31 | 1995-01-03 | Telefonaktiebolaget L M Ericsson | Alternating grating tunable DBR laser |
| JP2526806B2 (ja) * | 1994-04-26 | 1996-08-21 | 日本電気株式会社 | 半導体レ―ザおよびその動作方法 |
| JPH08255087A (ja) * | 1995-03-17 | 1996-10-01 | Toshiba Corp | 例外処理方法 |
| EP0735635B1 (en) * | 1995-03-31 | 2000-08-02 | Canon Kabushiki Kaisha | Optical semiconductor apparatus, driving method therefor, light source apparatus and optical communication system using the same |
-
1996
- 1996-09-04 SE SE9603219A patent/SE507376C2/sv not_active IP Right Cessation
-
1997
- 1997-09-02 DE DE69736403T patent/DE69736403T2/de not_active Expired - Lifetime
- 1997-09-02 CA CA002264934A patent/CA2264934C/en not_active Expired - Fee Related
- 1997-09-02 CN CNB971995664A patent/CN1174577C/zh not_active Expired - Fee Related
- 1997-09-02 AU AU41406/97A patent/AU4140697A/en not_active Abandoned
- 1997-09-02 JP JP51256598A patent/JP3891362B2/ja not_active Expired - Fee Related
- 1997-09-02 EP EP97939283A patent/EP1010281B1/en not_active Expired - Lifetime
- 1997-09-02 KR KR10-1999-7001818A patent/KR100411871B1/ko not_active Expired - Fee Related
- 1997-09-02 WO PCT/SE1997/001464 patent/WO1998010544A2/en not_active Ceased
- 1997-09-03 US US08/923,034 patent/US6215804B1/en not_active Expired - Lifetime
-
1998
- 1998-05-02 TW TW086113028A patent/TW363292B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998010544A3 (en) | 2000-11-09 |
| DE69736403T2 (de) | 2006-11-30 |
| US6215804B1 (en) | 2001-04-10 |
| SE9603219L (sv) | 1998-03-05 |
| JP2002511979A (ja) | 2002-04-16 |
| JP3891362B2 (ja) | 2007-03-14 |
| CN1174577C (zh) | 2004-11-03 |
| HK1023240A1 (en) | 2000-09-01 |
| CA2264934A1 (en) | 1998-03-12 |
| AU4140697A (en) | 1998-03-26 |
| CN1237298A (zh) | 1999-12-01 |
| SE9603219D0 (sv) | 1996-09-04 |
| EP1010281A1 (en) | 2000-06-21 |
| KR20000068447A (ko) | 2000-11-25 |
| KR100411871B1 (ko) | 2003-12-24 |
| DE69736403D1 (de) | 2006-09-07 |
| WO1998010544A2 (en) | 1998-03-12 |
| EP1010281B1 (en) | 2006-07-26 |
| TW363292B (en) | 1999-07-01 |
| SE507376C2 (sv) | 1998-05-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |
Effective date: 20170905 |