CN117424432B - Driving circuit and driving method of GAN switching tube - Google Patents
Driving circuit and driving method of GAN switching tube Download PDFInfo
- Publication number
- CN117424432B CN117424432B CN202311713209.8A CN202311713209A CN117424432B CN 117424432 B CN117424432 B CN 117424432B CN 202311713209 A CN202311713209 A CN 202311713209A CN 117424432 B CN117424432 B CN 117424432B
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- field effect
- tube
- gan
- charge pump
- driving
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000005669 field effect Effects 0.000 claims abstract description 73
- 230000000295 complement effect Effects 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 17
- 238000004364 calculation method Methods 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 31
- 229910002601 GaN Inorganic materials 0.000 description 30
- 238000010586 diagram Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Abstract
The invention provides a driving circuit and a driving method of a GAN switching tube, which relate to the technical field of GAN switching tube driving, wherein the driving circuit comprises: complementary push-pull circuit, charge pump circuit, precharge circuit, complementary push-pull circuit includes: field effect transistor VT1, field effect transistor VT2; the charge pump circuit includes: drive resistor R g Charge pump capacitance C q The method comprises the steps of carrying out a first treatment on the surface of the The precharge circuit includes: precharging field effect tube VT3, reverse protection diode D1, complementary push-pull circuit formed by field effect tube VT1 and field effect tube VT2 and driving resistor R g Charge pump capacitance C q The precharge field effect transistor VT3 is connected in series with the reverse protection diode D1 and then connected in parallel to both ends of the gate and the source of the GAN switching tube. The invention can realize positive pressure on and negative pressure off by using a single power supply, and the initial power-on is free from the risk of error conduction.
Description
Technical Field
The invention relates to the technical field of GAN switching tube driving, in particular to a driving circuit and a driving method of a GAN switching tube.
Background
To meet the demands of high frequency output and miniaturization of magnetic elements, the switching frequency of the power supply is gradually increased. The gallium nitride (GAN) device is used as one of novel wide bandgap semiconductor representative devices, has the advantages of lower on-resistance, faster switching speed, higher junction temperature working capacity and the like compared with the Si device, is used for replacing the Si device to be used as a power device for manufacturing the converter, is expected to obviously improve the highest working frequency and efficiency of the converter, reduces the volume and weight of the converter, and is widely applied as a high-frequency device.
Chinese invention patent name: GAN transistor drive circuit, application number: 202011282053.9A GAN transistor driving circuit comprises an upper tube circuit, a lower tube circuit and an upper tube control circuit, wherein the upper tube circuit and the lower tube circuit comprise an upper tube and a lower tube, the upper tube and the lower tube are GAN transistors, the drain electrode of the upper tube is connected with a power supply voltage VCC, the grid electrode is connected with a digital input VIN, the source electrode is connected with the drain electrode of the lower tube, and the gate electrode is connected with the grid electrode of a driven GAN transistor as the output of the GAN transistor driving circuit; the grid electrode of the lower pipe is connected with the upper and lower pipe control circuit; the upper and lower tube control circuit controls the lower tube by using a bus voltage VD, a power supply voltage VCC and a digital input VIN, so that the output of the GAN transistor driving circuit is in phase with the digital input VIN, the upper and lower tube control circuit comprises transistors, the included transistors are GAN transistors, and the transistors are conducted when a voltage higher than a threshold voltage is applied to the grid electrode. The above patent of the invention accelerates the driving speed of the GAN driver, but does not consider the driving safety design such as: the design of negative pressure turn-off function and preventing power-on misleading, therefore, it is important to develop a simple and reliable driving circuit and driving technology.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a driving circuit and a driving method of a GAN switching tube, which can realize the negative pressure turn-off of the GAN switching tube under the condition of single power supply and have the function of preventing the misleading of initial power-on.
The technical scheme adopted by the invention is as follows:
a drive circuit for a GAN switching tube, the drive circuit comprising: complementary push-pull circuit, charge pump circuit, precharge circuit, complementary push-pull circuit includes: field effect transistor VT1, field effect transistor VT2; the charge pump circuit includes: drive resistor R g Charge pump capacitance C q The method comprises the steps of carrying out a first treatment on the surface of the The precharge circuit includes: precharging field effect tube VT3, reverse protection diode D1, complementary push-pull circuit formed by field effect tube VT1 and field effect tube VT2 and driving resistor R g Charge pump capacitance C q The precharge field effect transistor VT3 is connected in series with the reverse protection diode D1 and then connected in parallel to both ends of the gate and the source of the GAN switching tube.
A driving method of a GAN switching tube comprises the following steps:
s1, the driving circuit is initially electrified, the control unit controls the conduction of the pre-charge field effect tube VT3 at the initial moment, and after the time delay T1, the control unit controls the conduction of the field effect tube VT1 and the charge pump capacitor C q Charging, and executing step S2;
s2, after the time delay T2, the control unit controls the turn-off field effect tube VT1 and the precharge field effect tube VT3 to execute the step S3;
s3, after the time delay T3, the control unit controls the field effect tube VT1 and the field effect tube VT2 to be complementarily conducted, and when the field effect tube VT1 is conducted, the charge pump capacitor C q Junction capacitance C with GAN switching tube GS Starting charging until the voltage V between the gate and the source of the GAN switch tube GS Reaching the clamping voltage V f In this process when V GS Greater than threshold voltage V th When the GAN switch tube is turned on; when the field effect transistor VT2 is turned on, the charge pump capacitor C q Junction capacitance C of GAN switch tube GS Reverse charging to negative voltage-V N In this process when V GS Less than threshold voltage V th The GAN switching tube is turned off.
The beneficial effects of the invention are as follows: the invention realizes positive-pressure on-negative pressure turn-off by setting the charge pump to generate turn-off negative pressure, and prevents the situation of false turn-on after initial power-on by introducing the precharge circuit.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to a person skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a circuit topology of an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating an operation sequence of each switch tube according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a voltage waveform of a key point in a precharge phase according to an embodiment of the present invention;
fig. 4 is a voltage waveform diagram of key points in a normal operation stage according to an embodiment of the present invention.
Detailed Description
The invention is further illustrated by the following examples in conjunction with the accompanying drawings: in order to clearly illustrate the technical features of the present solution, the present invention will be described in detail below with reference to the following detailed description and the accompanying drawings. The following disclosure provides many different embodiments, or examples, for implementing different structures of the invention. In order to simplify the present disclosure, components and arrangements of specific examples are described below. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. It should be noted that the components illustrated in the figures are not necessarily drawn to scale. Descriptions of well-known components and processing techniques and processes are omitted so as to not unnecessarily obscure the present invention.
As shown in fig. 1, the invention discloses a driving circuit of a GAN switch tube, which comprises a complementary push-pull circuit, a charge pump circuit and a precharge circuit, and specifically comprises: field-effect tube VT1, field-effect tube VT2 and grid current-limiting resistor R b Drive resistor R g Charge pump capacitance C q The field effect transistor VT3 is precharged, and the diode D1, the power supply and the control unit are reversely protected. Complementary push-pull circuit and driving resistor R formed by field effect tube VT1 and field effect tube VT2 g Charge pump capacitance C q And the series connection is connected to the GAN switch tube. The precharge fet VT3 is connected in series with the reverse protection diode D1, and is connected in parallel to both ends of the gate and the source of the GAN switching tube, that is: the drain electrode of the pre-charge field effect tube VT3 is connected with the negative electrode of the reverse protection diode D1, the positive electrode of the reverse protection diode D1 is connected with the grid electrode of the GAN switch tube, and the source electrode of the GAN switch tube is grounded after being connected with the source electrode of the pre-charge field effect tube VT3. The drain electrode of the complementary push-pull circuit field effect tube VT1 is connected with a power supply, the source electrode of the field effect tube VT2 is connected with the source electrode of the pre-charge field effect tube VT3 and then grounded, and the control unit is in communication connection with the field effect tube and used for controlling the opening and closing of the field effect tube VT1, the field effect tube VT2 and the pre-charge field effect tube VT3.
As shown in fig. 2, the driving method of the present invention is divided into two working phases: and the charge pump capacitor precharging stage (t 0-t 2) and the driving circuit normally works (after the time t 3).
As shown in fig. 3, the circuit is initially powered up first into a precharge phase, at time t=t0, charge pump capacitor C q Voltage V at two ends Cq =0, voltage V between gate and source of gan switch tube GS =0, at which point precharge fet VT3 is turned on. After a time delay T1 (T1 is greater than 1 microsecond), the field effect transistor VT1 is turned on at the moment of t=t1, and the charge pump capacitor C is in a period of T1-T2 q By power supply-VT 1-R g -C q -D1-VT3-GND loop starts charging, V Cq Start to rise until it is equal to the drive supply voltage, V GS Is short-circuited by a precharge circuit, thereafter V Cq No longer changes. During this period V GS Conduction voltage drop V of pre-charge field effect tube VT3 all the time s Conduction voltage drop V with D1 df The sum, i.e. V GS =V s +V df 。
And delaying the time T2, and simultaneously turning off the field effect transistor VT1 and the precharge field effect transistor VT3 at the time t=t2. T2 is more than 3 times of charge pump capacitor C q A charge time constant, namely:
wherein R is g To drive the resistor, unit，C q Is the charge pump capacitance, unit F.
At time t=t2, the precharge operation phase ends.
And a time delay T3 (T3 is more than 1 microsecond), and at the time t=t3, the circuit enters a normal working stage.
In the normal working phase, the field effect tube VT1 and the field effect tube VT2 are complementarily conducted, as shown in fig. 4, the PWM curve is the control signal of the field effect tube VT1, the PWM is '1', the VT1 is conducted, the PWM is '0', and the VT2 is conducted. In the range from t3 to t7, which is the on period of the fet VT1, the time t=t3 starts,charge pump capacitor C q Junction capacitance C with GAN switching tube GS By power supply-VT 1-R g -C q -C GS -GND Loop charging, V Cq And V is equal to GS All rise. By time t=t4, V GS Reaching a threshold voltage V th The GAN switching tube is turned on. At time t=t5, V GS Clamping to a clamping voltage V f Thereafter V GS Is not changing, V Cq And continues to rise. time t=t6, V Cq =V CC -V f Thereafter V Cq Not being changed. After time t7, is the on period of VT 2. Starting at time t=t7, charge pump capacitance C q Through C q - R g - VT2- C GS The loop of (2) is C GS Reverse charging V Cq And V is equal to GS All drop. By time t=t8, V GS Down to negative pressure-V N ，V Cq The voltage drops to V N Both of which are no longer changed thereafter. In this process, V GS The GAN switch is turned off when the threshold voltage is less than the threshold voltage. V (V) N Is negative pressure-V N Is a counter number to the above. The clamping voltage is higher than the threshold voltage, and the clamping voltage is formed by a protection mechanism at the two ends of the source electrode and the grid electrode of the GAN switch tube.
Negative pressure-V N The calculation method of (1) is as follows:
wherein C is q The unit F is a charge pump capacitor; c (C) GS The unit F is the junction capacitance of the switching tube; v (V) f Clamping voltage in volts; v (V) CC Is the supply voltage in volts.
Finally, it should be noted that: the above embodiments are only for illustrating the technical aspects of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those of ordinary skill in the art that: modifications and equivalents may be made to the specific embodiments of the invention without departing from the spirit and scope of the invention, which is intended to be covered by the claims.
Claims (9)
1. A driving circuit of a GAN switching transistor, the driving circuit comprising: complementary push-pull circuit, charge pump circuit, precharge circuit, complementary push-pull circuit includes: field effect transistor VT1, field effect transistor VT2; the charge pump circuit includes: drive resistor R g Charge pump capacitance C q The method comprises the steps of carrying out a first treatment on the surface of the The precharge circuit includes: precharging field effect tube VT3, reverse protection diode D1, complementary push-pull circuit formed by field effect tube VT1 and field effect tube VT2 and driving resistor R g Charge pump capacitance C q The precharge field effect transistor VT3 is connected in series with the reverse protection diode D1 and then connected in parallel to both ends of the gate and the source of the GAN switching tube.
2. The GAN switch tube driving circuit as claimed in claim 1, wherein the complementary push-pull circuit further comprises a gate current limiting resistor R b Is connected with the grid electrode of the field effect tube VT1 and the grid electrode of the field effect tube VT 2.
3. The GAN switching tube driving circuit of claim 1, further comprising: the device comprises a power supply and a control unit, wherein the drain electrode of a complementary push-pull circuit field effect tube VT1 is connected with the power supply, the source electrode of a field effect tube VT2 is connected with the source electrode of a pre-charging field effect tube VT3 and then grounded, and the control unit is in communication connection with the field effect tube VT1, the field effect tube VT2 and the pre-charging field effect tube VT3 and is used for controlling the opening and closing of the field effect tube VT1, the field effect tube VT2 and the pre-charging field effect tube VT3.
4. The GAN switching tube driving circuit as claimed in claim 1, wherein the precharge fet VT3 is connected in series with the reverse protection diode D1 and then connected in parallel to both ends of the gate and the source of the GAN switching tube: the drain electrode of the pre-charge field effect tube VT3 is connected with the negative electrode of the reverse protection diode D1, the positive electrode of the reverse protection diode D1 is connected with the grid electrode of the GAN switch tube, and the source electrode of the GAN switch tube is grounded after being connected with the source electrode of the pre-charge field effect tube VT3.
5. A driving method of a GAN switching transistor, said driving method being applied to a driving circuit according to any one of claims 1 to 4, comprising the steps of:
s1, the driving circuit is initially electrified, the control unit controls the conduction of the pre-charge field effect tube VT3 at the initial moment, and after the time delay T1, the control unit controls the conduction of the field effect tube VT1 and the charge pump capacitor C q Charging, and executing step S2;
s2, after the time delay T2, the control unit controls the turn-off field effect tube VT1 and the precharge field effect tube VT3 to execute the step S3;
s3, after the time delay T3, the control unit controls the field effect tube VT1 and the field effect tube VT2 to be complementarily conducted, and when the field effect tube VT1 is conducted, the charge pump capacitor C q Junction capacitance C with GAN switching tube GS Starting charging until the voltage V between the gate and the source of the GAN switch tube GS Reaching the clamping voltage V f When V GS Greater than threshold voltage V th When the GAN switch tube is turned on; when the field effect transistor VT2 is turned on, the charge pump capacitor C q Junction capacitance C of GAN switch tube GS Reverse charging to negative voltage-V N When V GS Less than threshold voltage V th The GAN switching tube is turned off.
6. The method of driving a GAN switch transistor as recited in claim 5, wherein a charge pump capacitor C q The charging loop is as follows: power supply, field effect transistor VT1 and driving resistor R g Charge pump capacitance C q Reverse protection diode D1, pre-charge field effect transistor VT3 and GND loop; charge pump capacitor C q Junction capacitance C with GAN switching tube GS The charging loop of charging is: power supply, field effect transistor VT1 and driving resistor R g Charge pump capacitance C q Junction capacitance C of GAN switch tube GS A GND loop; charge pump capacitor C q Junction capacitance C of GAN switch tube GS The charging loop of reverse charging is: charge pump capacitor C q Drive resistor R g Field effect transistor VT2, GANJunction capacitance C of switching tube GS And (3) a loop.
7. The method of driving a GAN switch transistor of claim 5, wherein T2 has a time period greater than 3 times the charge pump capacitance C q Is a charging time constant of (1), namely:
wherein R is g To drive the resistor, unit，C q Is the charge pump capacitance, unit F.
8. The method of driving a GAN switch as claimed in claim 5, wherein the voltage V between the gate and the source of the GAN switch GS Conduction voltage drop V equal to pre-charge field effect transistor VT3 s And the conduction voltage drop of the reverse protection diode D1.
9. The method of driving a GAN switch tube as claimed in claim 5, wherein the negative voltage is-V N The calculation method of (1) is as follows:
wherein C is q The unit F is a charge pump capacitor; c (C) GS The unit F is the junction capacitance of the switching tube; v (V) f Clamping voltage in volts; v (V) CC Is the supply voltage in volts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311713209.8A CN117424432B (en) | 2023-12-14 | 2023-12-14 | Driving circuit and driving method of GAN switching tube |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311713209.8A CN117424432B (en) | 2023-12-14 | 2023-12-14 | Driving circuit and driving method of GAN switching tube |
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| CN117424432A CN117424432A (en) | 2024-01-19 |
| CN117424432B true CN117424432B (en) | 2024-02-20 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003168963A (en) * | 2001-11-30 | 2003-06-13 | Auto Network Gijutsu Kenkyusho:Kk | Driving circuit and driving method for charge pump |
| JP2005012972A (en) * | 2003-06-20 | 2005-01-13 | Taiyo Yuden Co Ltd | Gate driving control circuit and method for field effect transistor |
| CN103944361A (en) * | 2014-04-04 | 2014-07-23 | 国家电网公司 | Field effect transistor high-speed drive circuit high in power and resistant to interference |
| CN108539964A (en) * | 2018-08-08 | 2018-09-14 | 上海颛芯企业管理咨询合伙企业（有限合伙） | The driving circuit and its device of power switch tube |
| CN113661626A (en) * | 2020-05-28 | 2021-11-16 | 深圳市大疆创新科技有限公司 | Charger driving circuit, integrated circuit, charger, charging control method and charging control system |
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- 2023-12-14 CN CN202311713209.8A patent/CN117424432B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003168963A (en) * | 2001-11-30 | 2003-06-13 | Auto Network Gijutsu Kenkyusho:Kk | Driving circuit and driving method for charge pump |
| JP2005012972A (en) * | 2003-06-20 | 2005-01-13 | Taiyo Yuden Co Ltd | Gate driving control circuit and method for field effect transistor |
| CN103944361A (en) * | 2014-04-04 | 2014-07-23 | 国家电网公司 | Field effect transistor high-speed drive circuit high in power and resistant to interference |
| CN108539964A (en) * | 2018-08-08 | 2018-09-14 | 上海颛芯企业管理咨询合伙企业（有限合伙） | The driving circuit and its device of power switch tube |
| CN113661626A (en) * | 2020-05-28 | 2021-11-16 | 深圳市大疆创新科技有限公司 | Charger driving circuit, integrated circuit, charger, charging control method and charging control system |
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| CN117424432A (en) | 2024-01-19 |
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